IEC 60749-36:2003
半导体器件.机械和气候试验方法.第36部分:稳态加速

Semiconductor devices - Mechanical and climatic test methods - Part 36: Acceleration, steady state


 

 

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标准号
IEC 60749-36:2003
发布
2003年
发布单位
国际电工委员会
当前最新
IEC 60749-36:2003
 
 
被代替标准
IEC 47/1667/FDIS:2002 IEC 60749:1996 IEC 60749 AMD 2:2001 IEC 60749 Edition 2.2:2002
适用范围
This part of IEC 60749 provides a test for determining the effects of constant acceleration on cavity-type semiconductor devices. It is an accelerated test designed to indicate types of structural and mechanical weaknesses not necessarily detected in shock and vibration test. It may be used as a high stress (destructive) test to determine the mechanical limits of the package, internal metallisation and lead system, die or substrate attachment, and other elements of the microelectronic device. When proper stress levels have been established this test method may also be employed as a non-destructive in-line 100 % screen to detect and eliminate devices with lower than normal mechanical strengths in any of the structural elements. In general, this acceleration steady-state test method is in conformity with IEC 60068-2-7 but, due to specific requirements of semiconductors, the clauses of this standard apply.

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