GB/T 11094-2007 (English Version) Horizontal bridgman grown gallium arsenide single crystal and cutting wafer

Standard No.: GB/T 11094-2007
Language: Chinese, Available in English version
Release Date: 2007
Published By: General Administration of Quality Supervision, Inspection and Quarantine of the People‘s Republic of China
Status: Be replaced 2021-08
Replace By: GB/T 11094-2020
Latest: GB/T 11094-2020
Replace: GB/T 11094-1989

Scope: This standard specifies the requirements, test methods and inspection rules for horizontal gallium arsenide single crystals, single crystal ingots and slices. This standard is applicable to horizontal gallium arsenide single crystals, single crystal ingots and slices. The products are mainly used in the production of optoelectronic devices, microwave devices and sensing elements.

GB/T 11094-2007 Referenced Document

GB/T 14264 Semiconductor materials-Terms and definitions *， 2009-10-30 Update
GB/T 1555 Method for Determination of Crystalline Orientation of Semiconductor Single Crystal*， 2023-08-06 Update
GB/T 2828.1 Inspection procedure by count sampling part 1: Lot by lot inspection sampling plan retrieved by acceptance quality limit (AQL)*， 2013-02-15 Update
GB/T 4326 Extrinsic semiconductor single crystals measurement of Hall mobility and Hall coefficient
GB/T 8760 Test method for dislocation density of monocrystal gallium arsenide*， 2020-09-29 Update
GJB 1927 Gallium arsenide single crystal material testing method

2020 GB/T 11094-2020 Gallium arsenide single crystal and cutting wafer grown by horizontal bridgman method
2007 GB/T 11094-2007 Horizontal bridgman grown gallium arsenide single crystal and cutting wafer
1989 GB/T 11094-1989 Boat-grown gallium arsenide single crystals and As-cut slices