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new semiconductor materials

new semiconductor materials, Total:174 items.

In the international standard classification, new semiconductor materials involves: Semiconducting materials, Insulating fluids, Testing of metals, Test conditions and procedures in general, Cutting tools, Mechanical structures for electronic equipment, Integrated circuits. Microelectronics, Construction materials, Rectifiers. Convertors. Stabilized power supply, Semiconductor devices, Electromechanical components for electronic and telecommunications equipment, Electronic components in general, Printed circuits and boards, Power transmission and distribution networks, Vocabularies, Analytical chemistry, Electrical wires and cables, Ceramics, Optics and optical measurements, Surface treatment and coating, Electrical accessories.

Group Standards of the People's Republic of China, new semiconductor materials

T/SHDSGY 135-2023 New Energy Semiconductor Silicon Wafer Material Technology
T/CASME 798-2023 Specialized processing tools for semiconductor materials
T/CNIA 0143-2022 Ultrapure Resin Vessels for Trace Impurity Analysis of Semiconductor Materials
T/CASME 479-2023 Punched lead frame for plastic small outline packaging of semiconductor integrated circuits
T/ZJATA 0017-2023 Chemical vapor deposition (CVD) epitaxy equipment for preparing silicon carbide semiconductor materials

General Administration of Quality Supervision, Inspection and Quarantine of the People‘s Republic of China, new semiconductor materials

GB/T 14264-1993 Semiconductor materials-Terms and definitions
GB/T 14264-2009 Semiconductor materials-Terms and definitions
GB/T 1550-1997 Standard methods for measuring conductivity type of extrinsic semiconducting materials
GB/T 31469-2015 Semiconductor materials cutting fluid
GB/T 14844-1993 Designations of semiconductor materials
GB/T 7423.2-1987 Heat sink of semiconductor devices--Heat sink, Extruded shapes
GB 7423.2-1987 Semiconductor device heat sink profile heat sink
GB/T 42529-2023 Evaluation Requirements for Moisture Conduction and Phase Change Breathing Function of New Wall Materials
GB/T 4298-1984 The activation analysis method for the determination of elemental impurities in semiconductor silicon materials
GB/T 14112-2015 Semiconductor integrated circuits.Specification for stamped leadframes of plastic DIP
GB/T 14112-1993 Semiconductor integrated circuits Specification for stamped leadframes of plastic DIP
GB/T 3048.3-1994 Test methods for determining electrical properties of electric cables and wires.Measurement of volumeresistivity of semi-conducting rubbers and plastics

国家市场监督管理总局、中国国家标准化管理委员会, new semiconductor materials

GB/T 1550-2018 Test methods for conductivity type of extrinsic semiconducting materials
GB/T 14844-2018 Designations of semiconductor materials
GB/T 36646-2018 Equipment for preparation of nitride semiconductor materials by hydride vapor phase epitaxy
GB/T 37131-2018 Nanotechnologies—Test method of semiconductor nanopowder using UV-Vis diffuse reflectance spectroscopy

RO-ASRO, new semiconductor materials

STAS 6360-1974 SEMICONDUCTOR MATERIALS AND DEVICES Terminology

HU-MSZT, new semiconductor materials

MSZ 771/5-1979

Professional Standard - Electron, new semiconductor materials

SJ/T 11775-2021 Multi-wire saw used for semiconductor materials
SJ/T 10746-1996 Procedures and rules for pattern evaluation of new products for semiconductor integrated circuits
SJ/Z 3206.13-1989 General rules for emision spectrum analysis for semiconductor materials
SJ/T 11067-1996 Commonly used terminology for semiconductor photoelectric materials and pyroelectric materials in infrared detecting materials
SJ 20744-1999 General rule of infrared absorption spectral analysis for the impurity concentration in semiconductor materials

Indonesia Standards, new semiconductor materials

SNI 19-0429-1989 Guide for sampling of liquid and semi solid materials

British Standards Institution (BSI), new semiconductor materials

BS IEC 62899-203:2018 Printed electronics. Materials. Semiconductor ink
BS IEC 62951-5:2019 Semiconductor devices. Flexible and stretchable semiconductor devices - Test method for thermal characteristics of flexible materials
BS EN 62047-18:2013 Semiconductor devices. Micro-electromechanical devices. Bend testing methods of thin film materials
BS EN 62047-2:2006 Semiconductor devices - Micro-electromechanical devices - Part 2: Tensile testing method of thin film materials
BS EN 62047-10:2011 Semiconductor devices. Micro-electromechanical devices. Micro-pillar compression test for MEMS materials
BS EN 62047-21:2014 Semiconductor devices. Micro-electromechanical devices. Test method for Poisson's ratio of thin film MEMS materials
BS EN 62047-14:2012 Semiconductor devices. Micro-electromechanical devices. Forming limit measuring method of metallic film materials
BS EN 60749-39:2006 Semiconductor devices - Mechanical and climatic test methods - Measurement of moisture diffusivity and water solubility in organic materials used for semiconductor components
21/30428334 DC BS EN IEC 62899-203. Printed electronics. Part 203. Materials. Semiconductor ink
BS EN 62047-6:2010 Semiconductor devices - Micro-electromechanical devices - Axial fatigue testing methods of thin film materials
BS EN 62047-11:2013 Semiconductor devices. Micro-electromechanical devices. Test method for coefficients of linear thermal expansion of free-standing materials for micro-electromechanical systems
BS EN 62047-12:2011 Semiconductor devices. Micro-electromechanical devices. Bending fatigue testing method of thin film materials using resonant vibration of MEMS structures
BS EN IEC 60749-39:2022 Tracked Changes. Semiconductor devices. Mechanical and climatic test methods. Measurement of moisture diffusivity and water solubility in organic materials used for semiconductor components
20/30425840 DC BS EN IEC 60749-39. Semiconductor devices. Mechanical and climatic test methods. Part 39. Measurement of moisture diffusivity and water solubility in organic materials used for semiconductor components
PD CEN/TR 17603-32-05:2022 Space engineering. Structural materials handbook. New advanced materials, advanced metallic materials, general design aspects and load transfer and design of joints

Professional Standard - Machinery, new semiconductor materials

JB/T 8175-1999 Outline dimensions of extruded heat sink for power semiconductor devices
JB/T 5781-1991 Sectioned radiator for power semiconductor devices. Technical specification

International Electrotechnical Commission (IEC), new semiconductor materials

IEC 62899-203:2018 Printed electronics - Part 203: Materials - Semiconductor ink
IEC 62951-5:2019 Semiconductor devices - Flexible and stretchable semiconductor devices - Part 5: Test method for thermal characteristics of flexible materials
IEC 62047-2:2006 Semiconductor devices - Micro-electromechanical devices - Part 2: Tensile testing method of thin film materials
IEC 62047-18:2013 Semiconductor devices - Micro-electromechanical devices - Part 18: Bend testing methods of thin film materials
IEC 62047-21:2014 Semiconductor devices - Micro-electromechanical devices - Part 21: Test method for Poisson's ratio of thin film MEMS materials
IEC 62047-14:2012 Semiconductor devices - Microelectromechanical devices - Part 14: Forming limit measuring method of metallic film materials
IEC 60749-39:2021 RLV Semiconductor devices - Mechanical and climatic test methods - Part 39: Measurement of moisture diffusivity and water solubility in organic materials used for semiconductor components
IEC 60749-39:2021 Semiconductor devices - Mechanical and climatic test methods - Part 39: Measurement of moisture diffusivity and water solubility in organic materials used for semiconductor components
IEC 60749-39:2006 Semiconductor devices - Mechanical and climatic test methods - Part 39: Measurement of moisture diffusivity and water solubility in organic materials used for semiconductor components
IEC 62047-11:2013 Semiconductor devices - Micro-electromechanical devices - Part 11: Test method for coefficients of linear thermal expansion of free-standing materials for micro-electromechanical systems
IEC 62047-6:2009 Semiconductor devices - Micro-electromechanical devices - Part 6: Axial fatigue testing methods of thin film materials

German Institute for Standardization, new semiconductor materials

DIN 50447:1995 Testing of materials for semiconductor technology - Contactless determination of the electrical sheet resistance of semiconductor layers with the eddy-current method
DIN 50445:1992 Testing of materials for semiconductor technology; contactless determination of the electrical resistivity of semiconductor slices with the eddy current method; homogeneously doped semiconductor wafers
DIN 50441-1:1996 Testing of materials for semiconductor technology - Determination of the geometric dimensions of semiconductor wafers - Part 1: Thickness and thickness variation
DIN 50448:1998 Testing of materials for semiconductor technology - Contactless determination of the electrical resistivity of semi-insulating semi-conductor slices using a capacitive probe
DIN 50439:1982 Testing of materials for semiconductor technology; determination of the dopant concentration profile of single crystalline semiconductor material by means of the capacitancevoltage method and mercury contact
DIN 50441-2:1998 Testing of materials for semiconductor technology - Determination of the geometric dimensions of semiconductor wafers - Part 2: Testing of edge profile
DIN EN 62047-2:2007 Semiconductor devices - Micro-electromechanical devices - Part 2: Tensile testing method of thin film materials (IEC 62047-2:2006); German version EN 62047-2:2006
DIN SPEC 1994:2017-02 Testing of materials for semiconductor technology - Determination of anions in weak acids
DIN 50442-1:1981 Testing of semi-conductive inorganic materials; determination of the surface structure of circular monocrystalline semi-conductive slices; as-cut and lapped slices
DIN 50449-2:1998 Testing of materials for semiconductor technology - Determination of impurity content in semiconductors by infrared absorption - Part 2: Boron in gallium arsenide
DIN 50454-2:1994 Testing of materials for semiconductor technology - Determination of the dislocation etch pits density in monocrystals of III-V-compound semiconductors - Part 2: Indium phosphide
DIN 50454-3:1994 Testing of materials for semiconductor technology - Determination of the dislocation etch pits density in monocrystals of III-V-compound semiconductors - Part 3: Gallium phosphide
DIN 50443-1:1988 Testing of materials for use in semiconductor technology; detection of crystal defects and inhomogeneities in silicon single crystals by X-ray topography
DIN 50449-1:1997 Testing of materials for semiconductor technology - Determination of impurity content in semiconductors by infrared absorption - Part 1: Carbon in gallium arsenide
DIN EN 60749-39:2007 Semiconductor devices - Mechanical and climatic test methods - Part 39: Measurement of moisture diffusivity and water solubility in organic materials used for semiconductor components (IEC 60749-39:2006); German version EN 60749-39:2006
DIN EN 60749-39:2007-01 Semiconductor devices - Mechanical and climatic test methods - Part 39: Measurement of moisture diffusivity and water solubility in organic materials used for semiconductor components (IEC 60749-39:2006); German version EN 60749-39:2006 / Note: To be r...
DIN EN 62047-2:2007-02 Semiconductor devices - Micro-electromechanical devices - Part 2: Tensile testing method of thin film materials (IEC 62047-2:2006); German version EN 62047-2:2006
DIN EN 62047-10:2012-03 Semiconductor devices - Micro-electromechanical devices - Part 10: Micro-pillar compression test for MEMS materials (IEC 62047-10:2011); German version EN 62047-10:2011
DIN 50433-2:1976 Testing of semi-conducting inorganic materials; determining the orientation of single crystals by means of optical reflection figure
DIN EN 62047-18:2014-04 Semiconductor devices - Micro-electromechanical devices - Part 18: Bend testing methods of thin film materials (IEC 62047-18:2013); German version EN 62047-18:2013
DIN 50454-1:2000 Testing of materials for semiconductor technology - Determination of dislocations in monocrystals of III-V-compound semi-conductors - Part 1: Gallium arsenide
DIN 50433-3:1982 Testing of materials for semiconductor technology; determination of the orientation of single crystals by means of Laue back scattering
DIN EN 62047-6:2010-07 Semiconductor devices - Micro-electromechanical devices - Part 6: Axial fatigue testing methods of thin film materials (IEC 62047-6:2009); German version EN 62047-6:2010
DIN 50441-4:1999 Testing of materials for semiconductor technology - Determination of the geometric dimensions of semiconductor wafers - Part 4: Slice diameter, diamter variation, flat diameter, flat length, flat depth
DIN 50441-3:1985 Testing of materials for semiconductor technology; measurement of the geometric dimensions of semiconductor slices; determination of flatness deviation of polished slices by means of the multiple beam interference
DIN EN IEC 60749-39:2021-07 Semiconductor devices - Mechanical and climatic test methods - Part 39: Measurement of moisture diffusivity and water solubility in organic materials used for semiconductor components (IEC 47/2652/CDV:2020); English version prEN IEC 60749-39:2020 / Not...
DIN 50433-1:1976 Testing of semi-conducting inorganic materials; determining the orientation of single crystals by means of X-ray diffraction

机械电子工业部, new semiconductor materials

JB 5781-1991 Technical conditions of profile radiators for power semiconductor devices

Defense Logistics Agency, new semiconductor materials

DLA MIL-PRF-19500/672-2001 SEMICONDUCTOR DEVICE, TRANSISTOR, PLASTIC, NPN, SILICON, SWITCHING, TYPE 2N2222AUE1 JAN, JANTX, JANJ
DLA MIL-PRF-19500/672 VALID NOTICE 2-2011 Semiconductor Device, Transistor, Plastic, NPN, Silicon, Switching, Type 2N2222AUE1 JAN, JANTX, JANJ
DLA MIL-PRF-19500/686 VALID NOTICE 2-2011 Semiconductor Device, Transistor, Plastic, PNP, Silicon, Switching, Type 2N2907AUE1 JAN, JANTX, JANJ
DLA MIL-PRF-19500/695 VALID NOTICE 2-2011 Semiconductor Device, Transistor, Plastic, PNP, Silicon, Switching, Type 2N4033UE1 JAN, JANTX, JANJ
DLA MIL-PRF-19500/696 A-2009 SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, PLASTIC, N-CHANNEL, SILICON, TYPE 2N7537, 2N7537A, JAN AND JANTX
DLA MIL-PRF-19500/696 A VALID NOTICE 1-2013 Semiconductor Device, Field Effect Transistor, Plastic, N-Channel, Silicon, Type 2N7537, 2N7537A, JAN and JANTX
DLA MIL-PRF-19500/714-2009 SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, ENCAPSULATED PLASTIC, N-CHANNEL, SILICON, TYPE 2N7558, 2N7559 2N7560, JAN, JANTX, AND JANTXV
DLA MIL-PRF-19500/715-2009 SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, ENCAPSULATED PLASTIC, N-CHANNEL, SILICON, TYPE 2N7563, 2N764, 2N7565, JAN, JANTX, AND JANTXV
DLA MIL-PRF-19500/714 VALID NOTICE 1-2013 SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, ENCAPSULATED PLASTIC, N-CHANNEL, SILICON, TYPE 2N7558, 2N7559 2N7560, JAN, JANTX, AND JANTXV
DLA MIL-PRF-19500/715 VALID NOTICE 1-2013 Semiconductor Device, Field Effect Transistor, Encapsulated Plastic, N-Channel, Silicon, Type 2N7563, 2N764, 2N7565, JAN, JANTX, and JANTXV
DLA MIL-PRF-19500/694 A VALID NOTICE 1-2008 Semiconductor Device, Transistor, Plastic, NPN, Silicon, Switching, Type 2N3700UE1, JAN, JANTX, JANJ

Shaanxi Provincial Standard of the People's Republic of China, new semiconductor materials

DB61/T 1250-2019 General Specification for Sic (Silicon Carbide) Material Semiconductor Discrete Devices

Association Francaise de Normalisation, new semiconductor materials

NF C96-050-18*NF EN 62047-18:2014 Semiconductor devices - Micro-electromechanical devices - Part 18 : bend testing methods of thin film materials
NF C96-050-2*NF EN 62047-2:2006 Semiconductor devices - Micro-electromechanical devices - Part 2 : tensile testing methods of thin film materials.
NF C96-050-21*NF EN 62047-21:2014 Semiconductor devices - Micro-electromechanical devices - Part 21 : test method for Poisson's ratio of thin film MEMS materials
NF ISO 10677:2011 Céramiques techniques - Sources lumineuses UV destinée aux essais des matériaux photocatalytiques semi-conducteurs
XP CEN/TS 16599:2014 Photocatalyse - Détermination des conditions d'irradiation pour tester les propriétés photocatalytiques de matériaux semi-conducteurs
NF C96-022-39*NF EN 60749-39:2006 Semiconductor devices - Mechanical and climatic test methods - Part 39 : measurement of moisture diffusivity and water solubility in organic materials used for semiconductor components
NF C96-022-39*NF EN IEC 60749-39:2022 Semiconductor devices - Mechanical and climatic test methods - Part 39 : measurement of moisture diffusivity and water solubility in organic materials used for semiconductor components
NF EN 62047-2:2006 Dispositifs à semiconducteurs - Dispositifs microélectromécaniques - Partie 2 : méthodes d'essais de traction des matériaux en couche mince
NF EN 62047-18:2014 Dispositifs à semiconducteurs - Dispositif microélectromécaniques - Partie 18 : méthodes d'essai de flexion des matériaux en couche mince
NF EN IEC 60749-39:2022 Dispositifs à semiconducteurs - Méthodes d'essais mécaniques et climatiques - Partie 39 : mesure de la diffusivité d'humidité et de l'hydrosolubilité dans les matériaux organiques utilisés dans les composants à semiconducteurs
NF C96-050-10*NF EN 62047-10:2012 Semiconductor devices - Micro-electromechanical devices - Part 10: micro-pillar compression test for MEMS materials
NF ISO 14605:2013 Céramiques techniques - Sources lumineuses destinées aux essais des matériaux photocatalytiques semi-conducteurs dans un environnement d'éclairage intérieur
NF EN 62329-3-102:2010 Profilés thermorétractables - Partie 3 : exigences relatives aux dimensions des profilés, exigences de matériaux et performances de compatibilité - Feuille 102 : profilés thermorétractables en élastomère, semi-rigides - Exigences relatives aux...
NF EN 62047-6:2010 Dispositifs à semiconducteurs - Dispositifs microélectromécaniques - Partie 6 : méthodes d'essais de fatigue axiale des matériaux en couche mince
NF C96-050-11*NF EN 62047-11:2014 Semiconductor devices - Micro-electromechanical devices - Part 11 : test method for coefficients of linear thermal expansion of free-standing materials for micro-electromechanical systems
NF C96-050-12*NF EN 62047-12:2012 Semiconductor devices - Micro-electromechanical devices - Part 12 : bending fatigue testing method of thin film materials using resonant vibration of MEMS structures.
NF C96-050-6*NF EN 62047-6:2010 Semiconductor devices - Micro-electromechanical devices - Part 6 : axial fatigue testing methods of thin film materials
NF EN 62047-21:2014 Dispositifs à semiconducteurs - Dispositifs microélectromécaniques - Partie 21 : méthode d'essai relative au coefficient de Poisson des matériaux MEMS en couche mince
NF EN 60684-3-281:2010 Gaines isolantes souples - Partie 3 : spécifications pour types particuliers de gaines - Feuille 281 : gaines thermorétractables en polyoléfine, semiconductrices

American Society for Testing and Materials (ASTM), new semiconductor materials

ASTM D3004-02 Standard Specification for Extruded Crosslinked and Thermoplastic Semi-Conducting, Conductor and Insulation Shielding Materials
ASTM D3004-97 Standard Specification for Extruded Crosslinked and Thermoplastic Semi-Conducting, Conductor and Insulation Shielding Materials
ASTM D3004-08(2020) Standard Specification for Crosslinked and Thermoplastic Extruded Semi-Conducting, Conductor, and Insulation Shielding Materials
ASTM D6095-99 Standard Test Method for Volume Resistivity for Extruded Crosslinked and Thermoplastic Semiconducting Conductor and Insulation Shielding Materials
ASTM D6095-05 Standard Test Method for Volume Resistivity for Extruded Crosslinked and Thermoplastic Semiconducting Conductor and Insulation Shielding Materials
ASTM D6095-06 Standard Test Method for Longitudinal Measurement of Volume Resistivity for Extruded Crosslinked and Thermoplastic Semiconducting Conductor and Insulation Shielding Materials
ASTM D6095-12 Standard Test Method for Longitudinal Measurement of Volume Resistivity for Extruded Crosslinked and Thermoplastic Semiconducting Conductor and Insulation Shielding Materials
ASTM D6095-12(2023) Standard Test Method for Longitudinal Measurement of Volume Resistivity for Extruded Crosslinked and Thermoplastic Semiconducting Conductor and Insulation Shielding Materials
ASTM B976-11(2015) Standard Specification for Fiber Reinforced Aluminum Matrix Composite (AMC) Core Wire for Aluminum Conductors, Composite Reinforced (ACCR)
ASTM D6095-12(2018) Standard Test Method for Longitudinal Measurement of Volume Resistivity for Extruded Crosslinked and Thermoplastic Semiconducting Conductor and Insulation Shielding Materials

RU-GOST R, new semiconductor materials

GOST 22622-1977 Semiconductor materials. Terms and definitions

Japanese Industrial Standards Committee (JISC), new semiconductor materials

JIS C 5630-2:2009 Semiconductor devices -- Micro-electromechanical devices-- Part 2: Tensile testing method of thin film materials
JIS C 5630-18:2014 Semiconductor devices -- Micro-electromechanical devices -- Part 18: Bend testing methods of thin film materials
JIS R 1750:2012 Fine ceramics -- Light source for testing semiconducting photocatalytic materials used under indoor lighting environment
JIS C 5630-6:2011 Semiconductor devices -- Micro-electromechanical devices -- Part 6: Axial fatigue testing methods of thin film materials

American National Standards Institute （ANSI), new semiconductor materials

ANSI/ASTM D3004:2008 Specification for Extruded Crosslinked and Thermoplastic Semi-conducting, Conductor and Insulation Shielding Materials
ANSI/ASTM D6095:2012 Test Method for Longitudinal Measurement of Volume Resistivity for Extruded Crosslinked and Thermoplastic Semiconducting Conductor and Insulation Shielding Materials

Korean Agency for Technology and Standards (KATS), new semiconductor materials

KS C 6520-2021 Components and materials of semiconductor process —Measurement of wear characteristics by plasma
KS C 6520-2019 Components and materials of semiconductor process —Measurement of wear characteristics by plasma
KS C IEC 60749-39-2006(2021) Semiconductor devices－Mechanical and climatic test methods－Part 39：Measurement of moisture diffusivity and water solubility in organic materials used for semiconductor components
KS C IEC 60749-39-2006(2016) Semiconductor devices－Mechanical and climatic test methods－Part 39：Measurement of moisture diffusivity and water solubility in organic materials used for semiconductor components
KS C IEC 60749-39:2006 Semiconductor devices－Mechanical and climatic test methods－Part 39：Measurement of moisture diffusivity and water solubility in organic materials used for semiconductor components
KS C IEC 62047-18:2016 Semiconductor devices ― Micro-electromechanical devices ― Part 18: Bend testing methods of thin film materials
KS C IEC 62047-22:2016 Semiconductor devices ― Micro-electromechanical devices ― Part 18: Bend testing methods of thin film materials
KS C IEC 62047-18-2016(2021) Semiconductor devices ― Micro-electromechanical devices ― Part 18: Bend testing methods of thin film materials
KS C IEC 62047-22-2016(2021) Semiconductor devices ― Micro-electromechanical devices ― Part 18: Bend testing methods of thin film materials

Jiangsu Provincial Standard of the People's Republic of China, new semiconductor materials

DB32/T 3378-2018 New wall material production enterprise laboratory management specification

Anhui Provincial Standard of the People's Republic of China, new semiconductor materials

DB34/T 3969-2021 New wall material production enterprise laboratory management specification

Ningxia Provincial Standard of the People's Republic of China, new semiconductor materials

DB64/T 1829.1-2022 Ningxia's "six new" industry high-quality development standard system part 1: new materials

European Committee for Electrotechnical Standardization（CENELEC）, new semiconductor materials

EN 62047-10:2011 Semiconductor devices - Micro-electromechanical devices - Part 10: Micro-pillar compression test for MEMS materials
EN IEC 60749-39:2022 Semiconductor devices - Mechanical and climatic test methods - Part 39: Measurement of moisture diffusivity and water solubility in organic materials used for semiconductor components
EN 60749-39:2006 Semiconductor devices - Mechanical and climatic test methods Part 39: Measurement of moisture diffusivity and water solubility in organic materials used for semiconductor components
EN 62047-18:2013 Semiconductor devices - Micro-electromechanical devices - Part 18: Bend testing methods of thin film materials
EN 62047-21:2014 Semiconductor devices - Micro-electromechanical devices - Part 21: Test method for Poisson's ratio of thin film MEMS materials
EN 62047-6:2010 Semiconductor devices - Micro-electromechanical devices - Part 6: Axial fatigue testing methods of thin film materials
EN 62047-12:2011 Semiconductor devices - Micro-electromechanical devices - Part 12: Bending fatigue testing method of thin film materials using resonant vibration of MEMS structures

Lithuanian Standards Office , new semiconductor materials

LST EN 62047-14-2012 Semiconductor devices - Micro-electromechanical devices -- Part 14: Forming limit measuring method of metallic film materials (IEC 62047-14:2012)
LST EN 60749-39-2006 Semiconductor devices - Mechanical and climatic test methods - Part 39: Measurement of moisture diffusivity and water solubility in organic materials used for semiconductor components (IEC 60749-39:2006)

Danish Standards Foundation, new semiconductor materials

DS/EN 60749-39:2006 Semiconductor devices - Mechanical and climatic test methods -- Part 39: Measurement of moisture diffusivity and water solubility in organic materials used for semiconductor components
DS/EN 62047-10:2011 Semiconductor devices - Micro-electromechanical devices - Part 10: Micro-pillar compression test for MEMS materials
DS/EN 62047-2:2007 Semiconductor devices - Micro-electromechanical devices - Part 2: Tensile testing method of thin film materials
DS/EN 62047-18:2013 Semiconductor devices - Micro-electromechanical devices - Part 18: Bend testing methods of thin film materials
DS/EN 62047-6:2010 Semiconductor devices - Micro-electromechanical devices - Part 6: Axial fatigue testing methods of thin film materials

ES-UNE, new semiconductor materials

UNE-EN IEC 60749-39:2022 Semiconductor devices - Mechanical and climatic test methods - Part 39: Measurement of moisture diffusivity and water solubility in organic materials used for semiconductor components (Endorsed by Asociación Española de Normalización in March of 2022.)
UNE-EN 62047-10:2011 Semiconductor devices - Micro-electromechanical devices - Part 10: Micro-pillar compression test for MEMS materials (Endorsed by AENOR in December of 2011.)
UNE-EN 62047-18:2013 Semiconductor devices - Micro-electromechanical devices - Part 18: Bend testing methods of thin film materials (Endorsed by AENOR in November of 2013.)
UNE-EN 60749-39:2006 Semiconductor devices - Mechanical and climatic test methods -- Part 39: Measurement of moisture diffusivity and water solubility in organic materials used for semiconductor components (IEC 60749-39:2006). (Endorsed by AENOR in November of 2006.)
UNE-EN 62047-6:2010 Semiconductor devices - Micro-electromechanical devices -- Part 6: Axial fatigue testing methods of thin film materials (Endorsed by AENOR in June of 2010.)
UNE-EN 62047-21:2014 Semiconductor devices - Micro-electromechanical devices - Part 21: Test method for Poisson's ratio of thin film MEMS materials (Endorsed by AENOR in November of 2014.)

KR-KS, new semiconductor materials

KS C IEC 62047-18-2016 Semiconductor devices ― Micro-electromechanical devices ― Part 18: Bend testing methods of thin film materials
KS C IEC 62047-22-2016 Semiconductor devices ― Micro-electromechanical devices ― Part 18: Bend testing methods of thin film materials

ICEA - Insulated Cable Engineers Association Inc., new semiconductor materials

T-32-645-2012 Test Method for Establishing Volume Resistivity Compatibility of Water Blocking Components With Extruded Semiconducting Shield Materials

Insulated Cable Engineers Association （ICEA), new semiconductor materials

ICEA T-32-645-2012 TEST METHOD FOR ESTABLISHING VOLUME RESISTIVITY COMPATIBILITY OF WATER BLOCKING COMPONENTS WITH EXTRUDED SEMICONDUCTING SHIELD MATERIALS

European Committee for Standardization (CEN), new semiconductor materials

PD CEN/TS 16599:2014 Photocatalysis - Irradiation conditions for testing photocatalytic properties of semiconducting materials and the measurement of these conditions

Government Electronic & Information Technology Association, new semiconductor materials

GEIA SSB-1-C-2000 Guidelines for Using Plastic Encapsulated Microcircuits and Semiconductors in Military, Aerospace and Other Rugged Applications

Standard Association of Australia （SAA）, new semiconductor materials

AS/NZS 1660.2.3:1998 Test methods for electric cables, cords and conductors - Insulation, extruded semi-conductive screens and non-metallic sheaths - Methods specific to PVC and halogen free thermoplastic materials
AS/NZS 1660.2.1:1998 Test methods for electric cables, cords and conductors - Insulation, extruded semi-conductive screens and non-metallic sheaths - Methods for general application

CO-ICONTEC, new semiconductor materials

ICONTEC 1332-1981