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New semiconductor materials and devices

New semiconductor materials and devices, Total:150 items.

In the international standard classification, New semiconductor materials and devices involves: Mechanical structures for electronic equipment, Semiconductor devices, Power transmission and distribution networks, Rectifiers. Convertors. Stabilized power supply, Electromechanical components for electronic and telecommunications equipment, Integrated circuits. Microelectronics, Semiconducting materials, Electrical accessories.

General Administration of Quality Supervision, Inspection and Quarantine of the People‘s Republic of China, New semiconductor materials and devices

GB/T 7423.2-1987 Heat sink of semiconductor devices--Heat sink, Extruded shapes
GB 7423.2-1987 Semiconductor device heat sink profile heat sink
GB 7085-1986 Detail specification for electronic component--Semiconductor integrated circuit--CJ0450 Dual peripheral positive AND drivers

British Standards Institution (BSI), New semiconductor materials and devices

BS IEC 62951-5:2019 Semiconductor devices. Flexible and stretchable semiconductor devices - Test method for thermal characteristics of flexible materials
BS EN 62047-2:2006 Semiconductor devices - Micro-electromechanical devices - Part 2: Tensile testing method of thin film materials
BS EN 62047-18:2013 Semiconductor devices. Micro-electromechanical devices. Bend testing methods of thin film materials
BS EN 62047-21:2014 Semiconductor devices. Micro-electromechanical devices. Test method for Poisson's ratio of thin film MEMS materials
BS EN 60749-39:2006 Semiconductor devices - Mechanical and climatic test methods - Measurement of moisture diffusivity and water solubility in organic materials used for semiconductor components
BS IEC 62047-31:2019 Semiconductor devices. Micro-electromechanical devices - Four-point bending test method for interfacial adhesion energy of layered MEMS materials
BS EN IEC 60749-39:2022 Tracked Changes. Semiconductor devices. Mechanical and climatic test methods. Measurement of moisture diffusivity and water solubility in organic materials used for semiconductor components
BS EN 62047-11:2013 Semiconductor devices. Micro-electromechanical devices. Test method for coefficients of linear thermal expansion of free-standing materials for micro-electromechanical systems
20/30425840 DC BS EN IEC 60749-39. Semiconductor devices. Mechanical and climatic test methods. Part 39. Measurement of moisture diffusivity and water solubility in organic materials used for semiconductor components

Professional Standard - Machinery, New semiconductor materials and devices

JB/T 5781-1991 Sectioned radiator for power semiconductor devices. Technical specification
JB/T 8175-1999 Outline dimensions of extruded heat sink for power semiconductor devices

机械电子工业部, New semiconductor materials and devices

JB 5781-1991 Technical conditions of profile radiators for power semiconductor devices

Japanese Industrial Standards Committee (JISC), New semiconductor materials and devices

JIS C 7012:1982 Type designation system for discrete semiconductor devices
JIS C 5630-2:2009 Semiconductor devices -- Micro-electromechanical devices-- Part 2: Tensile testing method of thin film materials
JIS C 5630-18:2014 Semiconductor devices -- Micro-electromechanical devices -- Part 18: Bend testing methods of thin film materials
JIS C 5630-6:2011 Semiconductor devices -- Micro-electromechanical devices -- Part 6: Axial fatigue testing methods of thin film materials
JIS C 5630-12:2014 Semiconductor devices.Micro-electromechanical devices.Part 12: Bending fatigue testing method of thin film materials using resonant vibration of MEMS structures

International Electrotechnical Commission (IEC), New semiconductor materials and devices

IEC 62047-18:2013 Semiconductor devices - Micro-electromechanical devices - Part 18: Bend testing methods of thin film materials
IEC 62951-5:2019 Semiconductor devices - Flexible and stretchable semiconductor devices - Part 5: Test method for thermal characteristics of flexible materials
IEC 62047-21:2014 Semiconductor devices - Micro-electromechanical devices - Part 21: Test method for Poisson's ratio of thin film MEMS materials
IEC 60749-39:2021 RLV Semiconductor devices - Mechanical and climatic test methods - Part 39: Measurement of moisture diffusivity and water solubility in organic materials used for semiconductor components
IEC 60749-39:2021 Semiconductor devices - Mechanical and climatic test methods - Part 39: Measurement of moisture diffusivity and water solubility in organic materials used for semiconductor components
IEC 60749-39:2006 Semiconductor devices - Mechanical and climatic test methods - Part 39: Measurement of moisture diffusivity and water solubility in organic materials used for semiconductor components
IEC 62047-31:2019 Semiconductor devices - Micro-electromechanical devices - Part 31: Four-point bending test method for interfacial adhesion energy of layered MEMS materials
IEC 62047-11:2013 Semiconductor devices - Micro-electromechanical devices - Part 11: Test method for coefficients of linear thermal expansion of free-standing materials for micro-electromechanical systems
IEC 62047-12:2011 Semiconductor devices - Microelectromechanical devices - Part 12: Bending fatigue testing method of thin film materials using resonant vibration of MEMS structures
IEC 60749-20:2020 Semiconductor devices - Mechanical and climatic test methods - Part 20: Resistance of plastic encapsulated SMDs to the combined effect of moisture and soldering heat

Shaanxi Provincial Standard of the People's Republic of China, New semiconductor materials and devices

DB61/T 1250-2019 General Specification for Sic (Silicon Carbide) Material Semiconductor Discrete Devices

Defense Logistics Agency, New semiconductor materials and devices

DLA MIL-PRF-19500/672-2001 SEMICONDUCTOR DEVICE, TRANSISTOR, PLASTIC, NPN, SILICON, SWITCHING, TYPE 2N2222AUE1 JAN, JANTX, JANJ
DLA MIL-PRF-19500/672 VALID NOTICE 2-2011 Semiconductor Device, Transistor, Plastic, NPN, Silicon, Switching, Type 2N2222AUE1 JAN, JANTX, JANJ
DLA MIL-PRF-19500/686 VALID NOTICE 2-2011 Semiconductor Device, Transistor, Plastic, PNP, Silicon, Switching, Type 2N2907AUE1 JAN, JANTX, JANJ
DLA MIL-PRF-19500/695 VALID NOTICE 2-2011 Semiconductor Device, Transistor, Plastic, PNP, Silicon, Switching, Type 2N4033UE1 JAN, JANTX, JANJ
DLA MIL-PRF-19500/696 A-2009 SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, PLASTIC, N-CHANNEL, SILICON, TYPE 2N7537, 2N7537A, JAN AND JANTX
DLA MIL-PRF-19500/696 A VALID NOTICE 1-2013 Semiconductor Device, Field Effect Transistor, Plastic, N-Channel, Silicon, Type 2N7537, 2N7537A, JAN and JANTX
DLA MIL-PRF-19500/714-2009 SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, ENCAPSULATED PLASTIC, N-CHANNEL, SILICON, TYPE 2N7558, 2N7559 2N7560, JAN, JANTX, AND JANTXV
DLA MIL-PRF-19500/715-2009 SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, ENCAPSULATED PLASTIC, N-CHANNEL, SILICON, TYPE 2N7563, 2N764, 2N7565, JAN, JANTX, AND JANTXV
DLA MIL-PRF-19500/714 VALID NOTICE 1-2013 SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, ENCAPSULATED PLASTIC, N-CHANNEL, SILICON, TYPE 2N7558, 2N7559 2N7560, JAN, JANTX, AND JANTXV
DLA MIL-PRF-19500/715 VALID NOTICE 1-2013 Semiconductor Device, Field Effect Transistor, Encapsulated Plastic, N-Channel, Silicon, Type 2N7563, 2N764, 2N7565, JAN, JANTX, and JANTXV
DLA MIL-PRF-19500/694 A VALID NOTICE 1-2008 Semiconductor Device, Transistor, Plastic, NPN, Silicon, Switching, Type 2N3700UE1, JAN, JANTX, JANJ

Association Francaise de Normalisation, New semiconductor materials and devices

NF C96-050-18*NF EN 62047-18:2014 Semiconductor devices - Micro-electromechanical devices - Part 18 : bend testing methods of thin film materials
NF EN 62047-2:2006 Dispositifs à semiconducteurs - Dispositifs microélectromécaniques - Partie 2 : méthodes d'essais de traction des matériaux en couche mince
NF EN 62047-18:2014 Dispositifs à semiconducteurs - Dispositif microélectromécaniques - Partie 18 : méthodes d'essai de flexion des matériaux en couche mince
NF C96-050-10*NF EN 62047-10:2012 Semiconductor devices - Micro-electromechanical devices - Part 10: micro-pillar compression test for MEMS materials
NF C96-050-21*NF EN 62047-21:2014 Semiconductor devices - Micro-electromechanical devices - Part 21 : test method for Poisson's ratio of thin film MEMS materials
NF EN 62047-6:2010 Dispositifs à semiconducteurs - Dispositifs microélectromécaniques - Partie 6 : méthodes d'essais de fatigue axiale des matériaux en couche mince
NF EN 62047-21:2014 Dispositifs à semiconducteurs - Dispositifs microélectromécaniques - Partie 21 : méthode d'essai relative au coefficient de Poisson des matériaux MEMS en couche mince
NF EN 62047-14:2012 Dispositifs à semiconducteurs - Dispositifs microélectromécaniques - Partie 14 : méthode de mesure des limites de formage des matériaux à couche métallique
NF C96-022-39*NF EN IEC 60749-39:2022 Semiconductor devices - Mechanical and climatic test methods - Part 39 : measurement of moisture diffusivity and water solubility in organic materials used for semiconductor components
NF EN 62047-10:2012 Dispositifs à semiconducteur - Dispositifs microélectromécaniques - Partie 10 : essai de compression utilisant la technique des micro-piliers pour les matériaux des MEMS
NF EN IEC 60749-39:2022 Dispositifs à semiconducteurs - Méthodes d'essais mécaniques et climatiques - Partie 39 : mesure de la diffusivité d'humidité et de l'hydrosolubilité dans les matériaux organiques utilisés dans les composants à semiconducteurs
NF C96-050-12*NF EN 62047-12:2012 Semiconductor devices - Micro-electromechanical devices - Part 12 : bending fatigue testing method of thin film materials using resonant vibration of MEMS structures.
NF C96-050-11*NF EN 62047-11:2014 Semiconductor devices - Micro-electromechanical devices - Part 11 : test method for coefficients of linear thermal expansion of free-standing materials for micro-electromechanical systems
NF EN 62047-11:2014 Dispositifs à semiconducteurs - Dispositifs microélectromécaniques - Partie 11 : méthode d'essai pour les coefficients de dilatation thermique linéaire des matériaux autonomes pour systèmes microélectromécaniques
NF EN 62007-1/A1:2022 Dispositifs optoélectroniques à semiconducteurs pour application dans les systèmes à fibres optiques - Partie 1 : Modèle de spécification relatif aux valeurs et caractéristiques essentielles
NF EN 62007-1:2015 Dispositifs optoélectroniques à semiconducteurs pour application dans les systèmes à fibres optiques - Partie 1 : modèle de spécification relatif aux valeurs et caractéristiques essentielles

Professional Standard - Aerospace, New semiconductor materials and devices

QJ 2300-1992 Microwave Ferrite Materials and Device Series Type Spectrum

Danish Standards Foundation, New semiconductor materials and devices

DS/EN 62047-10:2011 Semiconductor devices - Micro-electromechanical devices - Part 10: Micro-pillar compression test for MEMS materials
DS/EN 62047-2:2007 Semiconductor devices - Micro-electromechanical devices - Part 2: Tensile testing method of thin film materials
DS/EN 62047-18:2013 Semiconductor devices - Micro-electromechanical devices - Part 18: Bend testing methods of thin film materials
DS/EN 62047-6:2010 Semiconductor devices - Micro-electromechanical devices - Part 6: Axial fatigue testing methods of thin film materials
DS/EN 62047-14:2012 Semiconductor devices - Micro-electromechanical devices - Part 14: Forming limit measuring method of metallic film materials
DS/EN 60749-39:2006 Semiconductor devices - Mechanical and climatic test methods -- Part 39: Measurement of moisture diffusivity and water solubility in organic materials used for semiconductor components
DS/EN 62047-12:2012 Semiconductor devices - Micro-electromechanical devices - Part 12: Bending fatigue testing method of thin film materials using resonant vibration of MEMS structures
DS/EN 62047-11:2013 Semiconductor devices - Micro-electromechanical devices - Part 11: Test method for coefficients of linear thermal expansion of free-standing materials for micro-electromechanical systems

Korean Agency for Technology and Standards (KATS), New semiconductor materials and devices

KS C IEC 62047-18:2016 Semiconductor devices ― Micro-electromechanical devices ― Part 18: Bend testing methods of thin film materials
KS C IEC 62047-22:2016 Semiconductor devices ― Micro-electromechanical devices ― Part 18: Bend testing methods of thin film materials
KS C IEC 62047-18-2016(2021) Semiconductor devices ― Micro-electromechanical devices ― Part 18: Bend testing methods of thin film materials
KS C IEC 62047-22-2016(2021) Semiconductor devices ― Micro-electromechanical devices ― Part 18: Bend testing methods of thin film materials
KS C IEC 60749-39-2006(2016) Semiconductor devices－Mechanical and climatic test methods－Part 39：Measurement of moisture diffusivity and water solubility in organic materials used for semiconductor components
KS C IEC 60749-39:2006 Semiconductor devices－Mechanical and climatic test methods－Part 39：Measurement of moisture diffusivity and water solubility in organic materials used for semiconductor components
KS C IEC 60749-39-2006(2021) Semiconductor devices－Mechanical and climatic test methods－Part 39：Measurement of moisture diffusivity and water solubility in organic materials used for semiconductor components
KS C IEC 60749-20:2020 Semiconductor devices — Mechanical and climatic test methods — Part 20: Resistance of plastic encapsulated SMDs to the combined effect of moisture and soldering heat

ES-UNE, New semiconductor materials and devices

UNE-EN 62047-10:2011 Semiconductor devices - Micro-electromechanical devices - Part 10: Micro-pillar compression test for MEMS materials (Endorsed by AENOR in December of 2011.)
UNE-EN 62047-18:2013 Semiconductor devices - Micro-electromechanical devices - Part 18: Bend testing methods of thin film materials (Endorsed by AENOR in November of 2013.)
UNE-EN 62047-6:2010 Semiconductor devices - Micro-electromechanical devices -- Part 6: Axial fatigue testing methods of thin film materials (Endorsed by AENOR in June of 2010.)
UNE-EN 62047-21:2014 Semiconductor devices - Micro-electromechanical devices - Part 21: Test method for Poisson's ratio of thin film MEMS materials (Endorsed by AENOR in November of 2014.)
UNE-EN 62047-14:2012 Semiconductor devices - Micro-electromechanical devices - Part 14: Forming limit measuring method of metallic film materials (Endorsed by AENOR in June of 2012.)
UNE-EN 301908-11 V3.2.1:2006 Semiconductor devices - Micro-electromechanical devices -- Part 2: Tensile testing method of thin film materials (IEC 62047-2:2006). (Endorsed by AENOR in January of 2007.)
UNE-EN 62047-2:2006 Semiconductor devices - Micro-electromechanical devices -- Part 2: Tensile testing method of thin film materials (IEC 62047-2:2006). (Endorsed by AENOR in January of 2007.)
UNE-EN 300417-5-1 V1.1.3:2006 Semiconductor devices - Micro-electromechanical devices -- Part 2: Tensile testing method of thin film materials (IEC 62047-2:2006). (Endorsed by AENOR in January of 2007.)
UNE-EN IEC 60749-39:2022 Semiconductor devices - Mechanical and climatic test methods - Part 39: Measurement of moisture diffusivity and water solubility in organic materials used for semiconductor components (Endorsed by Asociación Española de Normalización in March of 2022.)
UNE-EN 60749-39:2006 Semiconductor devices - Mechanical and climatic test methods -- Part 39: Measurement of moisture diffusivity and water solubility in organic materials used for semiconductor components (IEC 60749-39:2006). (Endorsed by AENOR in November of 2006.)
UNE-EN 62047-12:2011 Semiconductor devices - Micro-electromechanical devices - Part 12: Bending fatigue testing method of thin film materials using resonant vibration of MEMS structures (Endorsed by AENOR in February of 2012.)
UNE-EN 62047-11:2013 Semiconductor devices - Micro-electromechanical devices - Part 11: Test method for coefficients of linear thermal expansion of free-standing materials for micro-electromechanical systems (Endorsed by AENOR in November of 2013.)

German Institute for Standardization, New semiconductor materials and devices

DIN EN 62047-2:2007-02 Semiconductor devices - Micro-electromechanical devices - Part 2: Tensile testing method of thin film materials (IEC 62047-2:2006); German version EN 62047-2:2006
DIN EN 62047-10:2012-03 Semiconductor devices - Micro-electromechanical devices - Part 10: Micro-pillar compression test for MEMS materials (IEC 62047-10:2011); German version EN 62047-10:2011
DIN EN 62047-18:2014-04 Semiconductor devices - Micro-electromechanical devices - Part 18: Bend testing methods of thin film materials (IEC 62047-18:2013); German version EN 62047-18:2013
DIN EN 62047-6:2010-07 Semiconductor devices - Micro-electromechanical devices - Part 6: Axial fatigue testing methods of thin film materials (IEC 62047-6:2009); German version EN 62047-6:2010
DIN EN 62047-14:2012-10 Semiconductor devices - Micro-electromechanical devices - Part 14: Forming limit measuring method of metallic film materials (IEC 62047-14:2012); German version EN 62047-14:2012
DIN EN 60749-39:2007 Semiconductor devices - Mechanical and climatic test methods - Part 39: Measurement of moisture diffusivity and water solubility in organic materials used for semiconductor components (IEC 60749-39:2006); German version EN 60749-39:2006
DIN EN 60749-39:2007-01 Semiconductor devices - Mechanical and climatic test methods - Part 39: Measurement of moisture diffusivity and water solubility in organic materials used for semiconductor components (IEC 60749-39:2006); German version EN 60749-39:2006 / Note: To be r...
DIN EN 62047-21:2015-04 Semiconductor devices - Micro-electromechanical devices - Part 21: Test method for Poisson's ratio of thin film MEMS materials (IEC 62047-21:2014); German version EN 62047-21:2014
DIN EN IEC 60749-39:2021-07 Semiconductor devices - Mechanical and climatic test methods - Part 39: Measurement of moisture diffusivity and water solubility in organic materials used for semiconductor components (IEC 47/2652/CDV:2020); English version prEN IEC 60749-39:2020 / Not...
DIN EN 62047-12:2012-06 Semiconductor devices - Micro-electromechanical devices - Part 12: Bending fatigue testing method of thin film materials using resonant vibration of MEMS structures (IEC 62047-12:2011); German version EN 62047-12:2011
DIN EN 62047-11:2014-04 Semiconductor devices - Micro-electromechanical devices - Part 11: Test method for coefficients of linear thermal expansion of free-standing materials for micro-electromechanical systems (IEC 62047-11:2013); German version EN 62047-11:2013
DIN EN 62047-18:2014 Semiconductor devices - Micro-electromechanical devices - Part 18: Bend testing methods of thin film materials (IEC 62047-18:2013); German version EN 62047-18:2013
DIN EN 62047-21:2015 Semiconductor devices - Micro-electromechanical devices - Part 21: Test method for Poisson's ratio of thin film MEMS materials (IEC 62047-21:2014); German version EN 62047-21:2014
DIN EN 62047-10:2012 Semiconductor devices - Micro-electromechanical devices - Part 10: Micro-pillar compression test for MEMS materials (IEC 62047-10:2011); German version EN 62047-10:2011
DIN EN IEC 60749-39:2021 Semiconductor devices - Mechanical and climatic test methods - Part 39: Measurement of moisture diffusivity and water solubility in organic materials used for semiconductor components (IEC 47/2652/CDV:2020); English version prEN IEC 60749-39:2020
DIN EN IEC 60749-39:2023-10 Semiconductor devices - Mechanical and climatic test methods - Part 39: Measurement of moisture diffusivity and water solubility in organic materials used for semiconductor components (IEC 60749-39:2021); German version EN IEC 60749-39:2022 / Note: DIN...
DIN 49018-1:1972 Conduits and fittings for electrical installation; flexible corrugated and inflammable conduits of insulating material and couplers for middle and light pressure load
DIN EN 62047-12:2012 Semiconductor devices - Micro-electromechanical devices - Part 12: Bending fatigue testing method of thin film materials using resonant vibration of MEMS structures (IEC 62047-12:2011); German version EN 62047-12:2011
DIN EN 62047-11:2014 Semiconductor devices - Micro-electromechanical devices - Part 11: Test method for coefficients of linear thermal expansion of free-standing materials for micro-electromechanical systems (IEC 62047-11:2013); German version EN 62047-11:2013
DIN EN 62047-6:2010 Semiconductor devices - Micro-electromechanical devices - Part 6: Axial fatigue testing methods of thin film materials (IEC 62047-6:2009); German version EN 62047-6:2010

European Committee for Electrotechnical Standardization（CENELEC）, New semiconductor materials and devices

EN 62047-18:2013 Semiconductor devices - Micro-electromechanical devices - Part 18: Bend testing methods of thin film materials
EN 62047-21:2014 Semiconductor devices - Micro-electromechanical devices - Part 21: Test method for Poisson's ratio of thin film MEMS materials
EN 62047-6:2010 Semiconductor devices - Micro-electromechanical devices - Part 6: Axial fatigue testing methods of thin film materials
EN 62047-10:2011 Semiconductor devices - Micro-electromechanical devices - Part 10: Micro-pillar compression test for MEMS materials
EN 62047-14:2012 Semiconductor devices - Micro-electromechanical devices - Part 14: Forming limit measuring method of metallic film materials
EN 60749-39:2006 Semiconductor devices - Mechanical and climatic test methods Part 39: Measurement of moisture diffusivity and water solubility in organic materials used for semiconductor components
EN 62047-2:2006 Semiconductor devices Micro-electromechanical devices Part 2: Tensile testing method of thin film materials
EN IEC 60749-39:2022 Semiconductor devices - Mechanical and climatic test methods - Part 39: Measurement of moisture diffusivity and water solubility in organic materials used for semiconductor components
EN 62047-12:2011 Semiconductor devices - Micro-electromechanical devices - Part 12: Bending fatigue testing method of thin film materials using resonant vibration of MEMS structures
EN 62047-11:2013 Semiconductor devices - Micro-electromechanical devices - Part 11: Test method for coefficients of linear thermal expansion of free-standing materials for micro-electromechanical systems

Lithuanian Standards Office , New semiconductor materials and devices

LST EN 62047-14-2012 Semiconductor devices - Micro-electromechanical devices -- Part 14: Forming limit measuring method of metallic film materials (IEC 62047-14:2012)
LST EN 62047-10-2011 Semiconductor devices - Micro-electromechanical devices -- Part 10: Micro-pillar compression test for MEMS materials (IEC 62047-10:2011)
LST EN 62047-2-2007 Semiconductor devices - Micro-electromechanical devices - Part 2: Tensile testing method of thin film materials (IEC 62047-2:2006)
LST EN 62047-6-2010 Semiconductor devices - Micro-electromechanical devices - Part 6: Axial fatigue testing methods of thin film materials (IEC 62047-6:2009)
LST EN 60749-39-2006 Semiconductor devices - Mechanical and climatic test methods - Part 39: Measurement of moisture diffusivity and water solubility in organic materials used for semiconductor components (IEC 60749-39:2006)
LST EN 62047-12-2011 Semiconductor devices - Micro-electromechanical devices -- Part 12: Bending fatigue testing method of thin film materials using resonant vibration of MEMS structures (IEC 62047-12:2011)

Professional Standard - Electron, New semiconductor materials and devices

SJ/T 10827-1996 Detailed specifications for electronic components - Semiconductor integrated circuits - CJ0451 HTL dual peripheral positive AND drivers
SJ/T 10826-1996 Detailed specifications for electronic components - Semiconductor integrated circuits - CJ0450 HTL dual peripheral positive AND drivers
SJ/T 10828-1996 Detailed specifications for electronic components - Semiconductor integrated circuits - CJ0452 HTL dual peripheral positive NAND drivers
SJ/T 10042-1991 Detail specification for electronic components.Semiconductor integrated circuit.CT54LS00/CT74LS00 quadruple 2-input positive-NAND gate
SJ/T 10823-1996 Detailed specifications for electronic components - Semiconductor integrated circuits - CH2009 HTL triple 3-input positive-NAND gate
SJ/T 10084-1991 Detail specification for electronic components.Semiconductor integrated circuit CT54H20/CT74H20 dual 4-input positive-NAND gate
SJ/T 10824-1996 Detailed specifications for electronic components - Semiconductor integrated circuits - CH2010 HTL Quad 2-input positive-NAND gate
SJ/T 10822-1996 Detailed specifications for electronic components - Semiconductor integrated circuits - CH2008 HTL dual 4-input positive-NAND gate
SJ/T 10820-1996 Detailed specifications for electronic components - Semiconductor integrated circuits - CH2001 HTL dual 4-input positive-NAND gate
SJ/T 10815-1996 Detailed specifications for electronic components - Semiconductor integrated circuits - CT1030 TTL8 input positive-NAND gate (Applicable for certification)
SJ/T 10842-1996 Detailed specifications for electronic components - Semiconductor integrated circuits - CE10104 ECL Quad 2-input AND gate (Applicable for certification)
SJ/T 10816-1996 Detailed specifications for electronic components - Semiconductor integrated circuits - CT1040 TTL dual 4-input positive-NAND buffer (Applicable for certification)
SJ/T 10808-1996 Detailed specifications for electronic components - Semiconductor integrated circuits - CT1000 TTL Quad 2-input positive-NAND gate (Applicable for certification)
SJ/T 10809-1996 Detailed specifications for electronic components - Semiconductor integrated circuits - CT1002 TTL Quad 2-input positive-NAND gate (Applicable for certification)
SJ/T 10811-1996 Detailed specifications for electronic components - Semiconductor integrated circuits - CT1008 TTL Quad 2-input positive-NAND gate (Applicable for certification)
SJ/T 10813-1996 Detailed specifications for electronic components - Semiconductor integrated circuits - CT1020 TTL dual 4-input positive-NAND gate (Applicable for certification)
SJ/T 10814-1996 Detailed specifications for electronic components - Semiconductor integrated circuits - CT1027 TTL Triple 3-input positive-NAND gate (Applicable for certification)
SJ/T 10812-1996 Detailed specifications for electronic components - Semiconductor integrated circuits - CT1010 TTL Triple 3-input positive-NAND gate (Applicable for certification)
SJ/T 10849-1996 Detailed specifications for electronic components - Semiconductor integrated circuits - CE10121 ECL4-channel 3-3-3-3 input AND-OR/OR-NAND gate (Applicable for certification)
SJ/T 10848-1996 Detailed specifications for electronic components - Semiconductor integrated circuits - CE10117 ECL dual 2-channel 2-3-input AND-OR/OR-NAND gate (Applicable for certification)
SJ/T 10817-1996 Detailed specifications for electronic components - Semiconductor integrated circuits - CT1054 TTL4-channel 2-2-2-2 input AND OR INVENT gate (Applicable for certification)

Insulated Cable Engineers Association （ICEA), New semiconductor materials and devices

ICEA T-32-645-2012 TEST METHOD FOR ESTABLISHING VOLUME RESISTIVITY COMPATIBILITY OF WATER BLOCKING COMPONENTS WITH EXTRUDED SEMICONDUCTING SHIELD MATERIALS

KR-KS, New semiconductor materials and devices

KS C IEC 62047-18-2016 Semiconductor devices ― Micro-electromechanical devices ― Part 18: Bend testing methods of thin film materials
KS C IEC 62047-22-2016 Semiconductor devices ― Micro-electromechanical devices ― Part 18: Bend testing methods of thin film materials
KS C IEC 60749-20-2020 Semiconductor devices — Mechanical and climatic test methods — Part 20: Resistance of plastic encapsulated SMDs to the combined effect of moisture and soldering heat

IEC - International Electrotechnical Commission, New semiconductor materials and devices

IEC 62047-31:2017 Semiconductor devices – Micro-electromechanical devices – Part 31: Four-point bending test method for interfacial adhesion energy of layered MEMS materials (Edition 1.0)

AT-OVE/ON, New semiconductor materials and devices

OVE EN IEC 60749-39:2020 Semiconductor devices - Mechanical and climatic test methods - Part 39: Measurement of moisture diffusivity and water solubility in organic materials used for semiconductor components (IEC 47/2652/CDV) (english version)