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Semiconductor material
Semiconductor material, Total:30 items.
In the international standard classification, Semiconductor material involves: Insulating fluids, Semiconducting materials, Cutting tools, Electronic components in general, Testing of metals, Vocabularies, Analytical chemistry, Electromechanical components for electronic and telecommunications equipment, Surface treatment and coating.
General Administration of Quality Supervision, Inspection and Quarantine of the People‘s Republic of China, Semiconductor material
- GB/T 14264-1993 Semiconductor materials-Terms and definitions
- GB/T 14264-2009 Semiconductor materials-Terms and definitions
- GB/T 31469-2015 Semiconductor materials cutting fluid
- GB/T 14844-1993 Designations of semiconductor materials
- GB/T 1550-1997 Standard methods for measuring conductivity type of extrinsic semiconducting materials
- GB/T 4298-1984 The activation analysis method for the determination of elemental impurities in semiconductor silicon materials
RO-ASRO, Semiconductor material
HU-MSZT, Semiconductor material
Professional Standard - Electron, Semiconductor material
- SJ/T 11775-2021 Multi-wire saw used for semiconductor materials
- SJ/Z 3206.13-1989 General rules for emision spectrum analysis for semiconductor materials
- SJ 20744-1999 General rule of infrared absorption spectral analysis for the impurity concentration in semiconductor materials
国家市场监督管理总局、中国国家标准化管理委员会, Semiconductor material
- GB/T 14844-2018 Designations of semiconductor materials
- GB/T 1550-2018 Test methods for conductivity type of extrinsic semiconducting materials
- GB/T 36646-2018 Equipment for preparation of nitride semiconductor materials by hydride vapor phase epitaxy
Group Standards of the People's Republic of China, Semiconductor material
- T/CASME 798-2023 Specialized processing tools for semiconductor materials
- T/CNIA 0143-2022 Ultrapure Resin Vessels for Trace Impurity Analysis of Semiconductor Materials
- T/ZJATA 0017-2023 Chemical vapor deposition (CVD) epitaxy equipment for preparing silicon carbide semiconductor materials
- T/SHDSGY 135-2023 New Energy Semiconductor Silicon Wafer Material Technology
RU-GOST R, Semiconductor material
Association Francaise de Normalisation, Semiconductor material
- XP CEN/TS 16599:2014 Photocatalyse - Détermination des conditions d'irradiation pour tester les propriétés photocatalytiques de matériaux semi-conducteurs
- XP B44-014*XP CEN/TS 16599:2014 Photocatalysis - Irradiation conditions for testing photocatalytic properties of semiconducting materials and the measurement of these conditions
European Committee for Standardization (CEN), Semiconductor material
- PD CEN/TS 16599:2014 Photocatalysis - Irradiation conditions for testing photocatalytic properties of semiconducting materials and the measurement of these conditions
- CEN/TS 16599:2014 Photocatalysis - Irradiation conditions for testing photocatalytic properties of semiconducting materials and the measurement of these conditions
German Institute for Standardization, Semiconductor material
- DIN 50439:1982 Testing of materials for semiconductor technology; determination of the dopant concentration profile of single crystalline semiconductor material by means of the capacitancevoltage method and mercury contact
- DIN 50433-2:1976 Testing of semi-conducting inorganic materials; determining the orientation of single crystals by means of optical reflection figure
- DIN CEN/TS 16599:2014-07*DIN SPEC 7397:2014-07 Photocatalysis - Irradiation conditions for testing photocatalytic properties of semiconducting materials and the measurement of these conditions; German version CEN/TS 16599:2014
- DIN 50435:1988 Testing of semiconductor materials; determination of the radial resistivity variation of silicon or germanium slices by means of the four-probe/direct current method
- DIN 50433-1:1976 Testing of semi-conducting inorganic materials; determining the orientation of single crystals by means of X-ray diffraction
- DIN 50431:1988 Testing of semiconductor materials; measurement of the resistivity of silicon or germanium single crystals by means of the four probe/direct current method with collinear array
British Standards Institution (BSI), Semiconductor material
- BS PD CEN/TS 16599:2014 Photocatalysis. Irradiation conditions for testing photocatalytic properties of semiconducting materials and the measurement of these conditions