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Rated photodiode

Rated photodiode, Total:448 items.

In the international standard classification, Rated photodiode involves: Optoelectronics. Laser equipment, Semiconductor devices, Electronic display devices, Vocabularies, Lamps and related equipment, Rectifiers. Convertors. Stabilized power supply, Electronic components in general, Fibre optic communications, Printed circuits and boards, Audio, video and audiovisual engineering, Television and radio broadcasting, Nuclear energy engineering, Solar energy engineering, Small craft, Electronic tubes, Dentistry, Natural gas, Electrical accessories, Electrical and electronic testing, Galvanic cells and batteries, Ceramics.

Professional Standard - Military and Civilian Products, Rated photodiode

WJ 2100-2004 Test method for silicon photodiodes and silicon avalanche photodiodes
WJ 2506-1998 Verification Regulations for Photodiode Dynamic Tester
WJ 2265-1995 Specifications for Preamplified Silicon Avalanche Photodiodes

ES-UNE, Rated photodiode

UNE-EN 120005:1992 BDS: PHOTODIODES, PHOTODIODE ARRAYS (NOT INTENDED FOR FIBRE OPTIC APPLICATIONS). (Endorsed by AENOR in September of 1996.)
UNE-EN 120001:1992 BDS: LIGHT EMITTING DIODES, LIGHT EMITTING DIODE ARRAYS, LIGHT EMITTING DIODE DISPLAYS WITHOUT INTERNAL LOGIC AND RESISTOR. (Endorsed by AENOR in September of 1996.)
UNE-EN 120006:1992 BDS: PIN-PHOTODIODES FOR FIBRE OPTIC APPLICATIONS. (Endorsed by AENOR in September of 1996.)
UNE-EN 120004:1992 BDS: AMBIENT RATED PHOTOCOUPLERS WITH PHOTOTRANSISTORS OUTPUT. (Endorsed by AENOR in September of 1996.)
UNE-EN 62504:2015/A1:2018 General lighting - Light emitting diode (LED) products and related equipment - Terms and definitions
UNE-EN IEC 60700-3:2023 Thyristor valves for high voltage direct current (HVDC) power transmission - Part 3: Essential ratings (limiting values) and characteristics (Endorsed by Asociación Española de Normalización in February of 2023.)
UNE-EN IEC 62149-12:2023 Fibre optic active components and devices - Performance standards - Part 12: Distributed feedback laser diode device for analogue radio over fibre systems (Endorsed by Asociación Española de Normalización in May of 2023.)

German Institute for Standardization, Rated photodiode

DIN EN 120005:1996 Blank detail specification - Photodiodes, photodiode-arrays (not intended for fibre optic applications); German version EN 120005:1992
DIN EN 120005:1996-11 Blank detail specification - Photodiodes, photodiode-arrays (not intended for fibre optic applications); German version EN 120005:1992
DIN EN 120001:1993-06 Blank detail specification: light emitting diodes, light emitting diode arrays, light emitting diode displays without internal logic and resistor; German version EN 120001:1992
DIN EN 120001:1993 Blank detail specification: light emitting diodes, light emitting diode arrays, light emitting diode displays without internal logic and resistor; German version EN 120001:1992
DIN IEC 62088:2002-09 Nuclear instrumentation - Photodiodes for scintillation detectors - Test procedures (IEC 62088:2001)
DIN EN 62341-6-1:2011-07 Organic light emitting diode (OLED) displays - Part 6-1: Measuring methods of optical and electro-optical parameters (IEC 62341-6-1:2009); German version EN 62341-6-1:2011
DIN EN 62504:2018-11 General lighting - Light emitting diode (LED) products and related equipment - Terms and definitions (IEC 62504:2014 + A1:2018); German version EN 62504:2014 + A1:2018 / Note: DIN EN 62504 (2015-06) remains valid alongside this standard until 2021-04-17.
DIN EN 62384:2007 DC or AC supplied electronic control gear for LED modules - Performance requirements (IEC 62384:2006); German version EN 62384:2006
DIN 49406-2:1989 Two-pole plugs for class II appliances rated for 10 A 250 V d.c., 16 A 250 V a.c., splash-proof
DIN IEC 62088:2002 Nuclear instrumentation - Photodiodes for scintillation detectors - Test procedures (IEC 62088:2001)
DIN EN 120004:1997-02 Blank detail specification: Ambient rated photocouplers with phototransistor output; German version EN 120004:1992
DIN 40742:1999 Lead acid batteries - Stationary valve regulated batteries with positive tubular plates and immobilized electrolyte - Rated capacities, main dimensions, weights
DIN EN 62384:2010 DC or AC supplied electronic control gear for LED modules - Performance requirements (IEC 62384:2006 + A1:2009); German version EN 62384:2006 + A1:2009
DIN 40736-1:1992 Lead acid batteries; stationary cells with positive tubular plates; cells in plastic-containers; rated capacities, main dimensions, weights
DIN 40736-2:1992 Lead acid batteries; stationary cells with positive tubular plates; cells in hard-rubber containers; rated capacities, main dimensions, weights
DIN EN 61347-2-13:2007 Lamp controlgear - Part 2-13: Particular requirements for d.c. or a.c. supplied electronic controlgear for LED modules (IEC 61347-2-13:2006); German version EN 61347-2-13:2006
DIN EN 62595-2:2013 LCD backlight unit - Part 2: Electro-optical measurement methods of LED backlight unit (IEC 62595-2:2012); German version EN 62595-2:2013
DIN EN 62341-6-1:2011 Organic light emitting diode (OLED) displays - Part 6-1: Measuring methods of optical and electro-optical parameters (IEC 62341-6-1:2009); German version EN 62341-6-1:2011
DIN EN 62504:2015 General lighting - Light emitting diode (LED) products and related equipment - Terms and definitions (IEC 62504:2014); German version EN 62504:2014
DIN 40744:1999 Lead acid batteries - Stationary valve regulated batteries with positive tubular plates and immobilized electrolyte in plastic-monobloc containers - Rated capacities, main dimensions, weights

European Standard for Electrical and Electronic Components, Rated photodiode

CECC 50 008- 004 Ambient Rated Rectifier Diode (En)
CECC 50 008- 005 Ambient Rated Rectifier Diode (En)
EN 120005:1992 Blank detail specification: photodiodes, photodiode-arrays (not intended for fibre optic applications)
EN 120001:1992 Blank detail specification; light emitting diodes, light emitting diode arrays, light emitting diode displays without internal logic and resistor
CECC 50 008- 014 UTE C 86-818/014; Ambient Rated Rectifier Diodes (Fr)
EN 120006:1992 Blank detail specification: PIN-photodiodes for fibre optic applications
CECC 50 001- 059 ISSUE 2 BS CECC 50 001-059; Silicon Ambient Rated Switching Diode in Glass Encapsulation (En)
CECC 50 001- 065 BS CECC 50 001-065 Issue 1; Silicon Ambient Rated High Speed Switching Diode Pair (Common Cathode) in Plastic Encapsulation (En)
CECC 20 004- 001 ED 1-1984 UTE C 86-504; Ambient Rated Photocouplers with Phototransistor Output (Fr)
CECC 50 009- 023 ISSUE 1-1980 BS CECC 50 009-023; Controlled Avalanche Case Rated Silicon Rectifier Diode; 48 Amp 600 to 1400 V; Stud Mounted; Hermetically Sealed (En)

(U.S.) Joint Electron Device Engineering Council Soild State Technology Association, Rated photodiode

JEDEC JESD211-2009 Zener and Voltage Regulator Diode Rating Verification and Characterization Testing
JEDEC JESD51-51-2012 Implementation of the Electrical Test Method for the Measurement of Real Thermal Resistance and Impedance of Light-Emitting Diodes with Exposed Cooling
JEDEC JESD4-1983 Definition of External Clearance and Creepage Distances of Discrete Semiconductor Packages for Thyristors and Rectifier Diodes

Association Francaise de Normalisation, Rated photodiode

NF EN 120005:1992 Spécification particulière cadre : photodiodes, réseaux de photodiodes (Non destinées aux applications pour les fibres optiques}
NF C93-120-005*NF EN 120005:1992 Blank detail specification : photodiodes, photodiode arrays (not intended for fibre optic applications)
NF EN 120001:1992 Spécification particulière cadre : diodes électroluminescentes, réseaux de diodes électroluminescentes, afficheurs à diodes électroluminescentes sans résistance ni circuits logiques internes
NF C93-120-001*NF EN 120001:1992 Blank detail specification : light emitting diodes, light emitting diode arrays, light emitting diode displays without internal logic and resistor
NF C96-551/A2:1981 Optoelectronic Light emitting diodes Optocouplers Relevant Article Sheets
NF C96-551/A3:1981 Optoelectronic Light emitting diodes Optocouplers Relevant Article Sheets
NF C86-502:1983 Harmonized system of quality assessment for electronic components. Blank detail specification. Infrared emitting diodes, infrared emitting diodes arrays.
NF C93-872:1987 Digital receivers with pin photodiode.
NF C86-501:1983 Harmonized system of quality assessment for electronic components. Blank detail specification. Light emitting diodes, light emitting diode arrays.
NF C86-505:1986 Semiconductor devices. Harmonized system of quality assessment for electronic components. Photodiodes. Photodiodes-arrays. Blank detail specification CECC 20 005.
NF EN 62341-6-1:2011 Afficheurs à diodes électroluminescentes organiques (OLED) - Partie 6-1 : méthodes de mesure des paramètres optiques et électro-optiques
NF C96-565-2*NF EN 62595-2:2013 LCD backlight unit - Part 2 : electro-optical measurement methods of LED backlight unit
NF C71-504*NF EN 62504:2014 General lighting - Light emitting diode (LED) products and related equipment - Terms and definitions
NF C71-504/A1*NF EN 62504/A1:2018 General lighting - Light emitting diode (LED) products and related equipment - Terms and definitions
NF EN 62504:2014 Éclairage général - Produits à diode électroluminescente (LED) et équipements associés - Termes et définitions
NF EN 62504/A1:2018 Éclairage général - Produits à diode électroluminescente (LED) et équipements associés - Termes et définitions
NF C71-305*NF EN 62384:2006 D.C. or A.C. supplied electronic control gear for LED modules - Performance requirements.
NF C93-120-004*NF EN 120004:1992 Blank detail specification : ambient rated photocouplers with phototransistor output
NF C96-541-6-1*NF EN 62341-6-1:2011 Organic light emitting diode (OLED) displays - Part 6-1 : measuring methods of optical and electro-optical parameters.
NF EN IEC 63286:2022 Panneaux à diodes électroluminescentes organiques (OLED) flexibles destinés à l'éclairage général - Exigences de performance
NF C71-251*NF EN 62560:2013 Self-ballasted LED-lamps for general lighting services by voltage > 50 V - Safety specifications
NF C86-819/A2:1984 Electronic Components Case-rated rectifier diodes Manual of detail specifications within the scope of the French standards NF C 86-010 and NF C 86-819 (CECC 50 000 - CECC 50 009)
NF EN IEC 60700-3:2023 Valves à thyristors pour le transport d'énergie en courant continu à haute tension (CCHT) - Partie 3 : valeurs assignées (valeurs limites) et caractéristiques essentielles
NF C71-247-13:2006 Lamp controlgear - Part 2-13 : particular requirements for d.c. for a.c. supplied electronic controlgear for LED modules.
NF C71-247-13*NF EN 61347-2-13:2014 Lamp controlgear - Part 2-13 : particular requirements for d.c. or a.c. supplied electronic controlgear for LED modules
NF EN IEC 62149-12:2023 Composants et dispositifs actifs fibroniques - Normes de performances - Partie 12 : dispositif à diode laser à rétroaction répartie pour systèmes radio analogiques sur fibre
NF C86-506:1986 Semiconductor devices. Harmonized system of quality assessment for electronic components pin-photodiodes for fibre optic applications. Blank detail specification.
NF C32-500*NF EN 50143:2009 Cables for signs and luminous-discharge-tube installations operating from a no-load rated output voltage exceeding 1 000 V but not exceeding 10 000 V

Korean Agency for Technology and Standards (KATS), Rated photodiode

KS C 7103-2005(2020) Organic Light Emitting Diode(OLED) display－Essential ratings and characteristics
KS C 7103-2005 Organic Light Emitting Diode(OLED) display－Essential ratings and characteristics
KS C 6990-2001 General rules of photodiodes for fiber optic transmission
KS C 6905-2001 General rules of laser diodes for fiber optic transmission
KS C 6991-2001 Test methods of photodiodes for fiber optic transmission
KS C 6906-2001 Test methods of laser diodes for fiber optic transmission
KS C 6990-2013 GENERAL RULES OF PHOTODIODES FOR FIBER OPTIC TRANSMISSION
KS C 6991-2013 TEST METHODS OF PHOTODIODES FOR FIBER OPTIC TRANSMISSION
KS C 7121-1990 Measuring Methods for Light Emitting Diodes (for Indication)
KS C 6990-2001(2011) GENERAL RULES OF PHOTODIODES FOR FIBER OPTIC TRANSMISSION
KS C 6991-2001(2011) TEST METHODS OF PHOTODIODES FOR FIBER OPTIC TRANSMISSION
KS C IEC 60747-2-2-2006(2021) Semiconductor devices－Discrete devices－Part 2：Rectifier diodes－Section Two : Blank detail specification for rectifier diodes (including avalanche rectifier diodes), ambient and case-rated, for current
KS C IEC 60747-2-2-2006(2016) Semiconductor devices－Discrete devices－Part 2：Rectifier diodes－Section Two : Blank detail specification for rectifier diodes (including avalanche rectifier diodes), ambient and case-rated, for current
KS C IEC 60747-2-1-2006(2016) Semiconductor devices－Discrete devices－Part 2：Rectifier diodes－Section one：Blank detail specification for rectifier diodes(including avalanche rectifier diodes),ambient and case-rated, up to 100 A
KS C IEC 60747-2-1-2006(2021) Semiconductor devices－Discrete devices－Part 2：Rectifier diodes－Section one：Blank detail specification for rectifier diodes(including avalanche rectifier diodes),ambient and case-rated, up to 100 A
KS P ISO 10650-2-2009(2014) Dentistry－Powered polymerization activators－Part 2：Light-emitting diode(LED) lamps
KS C IEC 62341-6-1:2020 Organic light emitting diode(OLED) displays — Part 6-1: Measuring methods of optical and electro-optical parameters
KS C IEC 62504:2020 General lighting — Light emitting diode(LED) products and related equipment — Terms and definitions
KS C IEC 62384:2011 DC or AC supplied electronic control gear for LED modules-Performance requirements
KS C IEC 60747-7-2-2006(2021) Semiconductor devices－Discrete devices－Part 7：Bipolar transistors－Section Two：Blank detail specification for case-rated bipolar transistors for low-frequency amplification
KS C IEC 62341-6:2007 Organic light emitting diode(OLED) displays－Part 6：Measurement methods
KS C IEC TS 62972:2018 General lighting — Organic light emitting diode (OLED) products and related equipment — Terms and definitions
KS C IEC 60747-2-2:2006 Semiconductor devices-Discrete devices-Part 2:Rectifier diodes-Section Two : Blank detail specification for rectifier diodes (including avalanche rectifier diodes), ambient and case-rated, for currents greater than 100 A
KS C IEC 60747-2-1:2006 Semiconductor devices－Discrete devices－Part 2：Rectifier diodes－Section one：Blank detail specification for rectifier diodes(including avalanche rectifier diodes),ambient and case-rated, up to 100 A
KS C IEC 61347-2-13:2011 Lamp controlgear－Part 2-13：Particular requirements for d.c. or a.c. supplied electronic controlgear for LED modules
KS C IEC 60747-6-2-2006(2021) Semiconductor devices－Discrete devices－Part 6：Thyristors－Section two：Blank detail specification for bidirectional triode thyristors(triacs), ambient or case-rated, up to 100 A
KS C IEC 60747-6-2-2006(2016) Semiconductor devices－Discrete devices－Part 6：Thyristors－Section two：Blank detail specification for bidirectional triode thyristors(triacs), ambient or case-rated, up to 100 A

SE-SIS, Rated photodiode

SIS SS CECC 20005-1988 Blank detail specification: Photodiodes, photodiode-arrays (not intended for fibre optic aoolications)
SIS SS-CECC 20001-1991 Blank detail specification: Light emitting diodes, light emitting diode arrays, light emitting diode displays without internal logic and resistor
SIS SS-CECC 50009-1991 Blank detail specification:Case-rated rectifier diodes
SIS SS-CECC 50008-1991 Blank detail specification: Ambient-rated rectifier diodes
SIS SS CECC 20006-1988 Blank detail specification: PIN-photodiodes for fibre optic applications
SIS SS CECC 20004-1988 Blank detail specification: Ambient ratedphotocouplers with photo-transistor output
SIS SS CECC 20004-1984 Blank detail specification: Ambient rated photocouplers with phototransistor output

Lithuanian Standards Office , Rated photodiode

LST EN 120005-2001 Blank detail specification. Photodiodes, photodiode-arrays (not intended for fibre optic applications)
LST EN 120001-2001 Blank detail specification. Light emitting diodes, light emitting diode arrays, light emitting diode displays without internal logic and resistor
LST EN 120004-2001 Blank detail specification. Ambient rated photocouplers with phototransistor output
LST EN 62341-6-1-2011 Organic light emitting diode (OLED) displays -- Part 6-1: Measuring methods of optical and electro-optical parameters (IEC 62341-6-1:2009)

British Standards Institution (BSI), Rated photodiode

BS IEC 60747-5-8:2019 Semiconductor devices. Optoelectronic devices. Light emitting diodes. Test method of optoelectronic efficiencies of light emitting diodes
BS EN 120005:1986 Specification for harmonized system of quality assessment for electronic components - Blank detail specification - Photodiodes, photodiode-arrays (not intended for fibre optic applications)
BS EN 120001:1991 Harmonized system of quality assessment for electronic components - Blank detail specification - Light emitting diodes, light emitting diode arrays, light emitting diode displays without internal logic and resistor
BS IEC 60747-5-16:2023 Semiconductor devices - Optoelectronic devices. Light emitting diodes. Test method of the flat-band voltage of GaN-based light emitting diodes based on the photocurrent spectroscopy
BS IEC 60747-5-11:2019 Semiconductor devices. Optoelectronic devices. Light emitting diodes. Test method of radiative and nonradiative currents of light emitting diodes
BS EN 120001:1993 Harmonized system of quality assessment for electronic components. Blank detail specification. Light emitting diodes, light emitting diode arrays, light emitting diode displays without internal logic and resistor
BS QC 750109:1993 Specification for harmonized system of quality assessment for electronic components. Blank detail specification. Rectifier diodes (including avalanche rectifier diodes), ambient and case-rated, for currents greater than 100 A
18/30367363 DC BS IEC 60747-5-8. Semiconductor devices. Part 5-8. Optoelectronic devices. Light emitting diodes. Test method of optoelectronic efficiencies of light emitting diodes
BS EN 120005:1993 Specification for harmonized system of quality assessment for electronic components. Blank detail specification. Photodiodes, photodiode-arrays (not intended for fibre optic applications)
BS PD IEC/TS 62916:2017 Photovoltaic modules. Bypass diode electrostatic discharge susceptibility testing
18/30388245 DC BS EN IEC 60747-5-11. Semiconductor devices. Part 5-11. Optoelectronic devices. Light emitting diodes. Test method of radiative and nonradiative currents of light emitting diodes
BS EN ISO 19009:2015 Small craft. Electric navigation lights. Performance of LED lights
PD IEC/TS 62916:2017 Photovoltaic modules. Bypass diode electrostatic discharge susceptibility testing
BS EN 120002:1993 Specification for harmonized system of quality assessment for electronic components. Blank detail specification: infrared emitting diodes, infrared emitting diode arrays
BS CECC 50008:1992 Harmonized system of quality assessment for electronic components. Blank detail specification: ambient-rated rectifier diodes
PD IEC TS 63109:2022 Photovoltaic (PV) modules and cells. Measurement of diode ideality factor by quantitative analysis of electroluminescence images
BS EN 62341-6-1:2011 Organic light emitting diode (OLED) displays. Measuring methods of optical and electro-optical parameters
PD IEC TR 60747-5-12:2021 Semiconductor devices. Optoelectronic devices. Light emitting diodes. Test method of LED efficiencies
BS CECC 50009:1992 Harmonized system of quality assessment for electronic components. Blank detail specification: case-rated rectifier diodes
BS E9375:1975 Specification - Harmonized system of quality assessment for electronic components - Blank detail specification: voltage regulator diodes and voltage reference diodes excluding precision-voltage temperature-compensated reference diodes
BS IEC 60747-5-15:2022 Semiconductor devices - Optoelectronic devices. Light emitting diodes. Test method of the flat-band voltage based on the electroreflectance spectroscopy
BS CECC 50008:1982 Specification for harmonized system of quality assessment for electronic components. Blank detail specification: ambient-rated rectifier diodes
BS CECC 50009:1982 Specification for harmonized system of quality assessment for electronic components. Blank detail specification: case-rated rectifier diodes
19/30392174 DC BS EN 60747-5-6. Semiconductor devices. Part 5-6. Optoelectronic devices. Light emitting diodes
13/30286043 DC BS EN 62341-2-1. Organic light emitting diode (OLED) displays. Part 2-1. Essential ratings and characteristics of OLED display modules
BS EN 62384:2006 D.C. or A.C. supplied electronic control gear for LED modules - Performance requirements
BS EN 62504:2014 General lighting. Light emitting diode (LED) products and related equipment. Terms and definitions
BS EN 62504:2014+A1:2018 General lighting. Light emitting diode (LED) products and related equipment. Terms and definitions
BS IEC 60747-5-9:2019 Semiconductor devices. Optoelectronic devices. Light emitting diodes. Test method of the internal quantum efficiency based on the temperature-dependent electroluminescence
BS EN 61347-2-13:2006 Lamp controlgear - Particular requirements for d.c. or a.c. supplied electronic controlgear for LED modules
BS EN 61347-2-13:2014 Lamp controlgear. Particular requirements for d.c. or a.c. supplied electronic controlgear for LED modules
BS EN 62384:2006+A1:2009 DC or AC supplied electronic control gear for LED modules - Performance requirements
BS PD IEC/TS 62972:2016 General lighting. Organic light emitting diode (OLED) products and related equipment. Terms and definitions
PD IEC/TS 62972:2016 General lighting. Organic light emitting diode (OLED) products and related equipment. Terms and definitions
14/30313209 DC BS EN 62341-6-1. Organic light emitting diode (OLED) displays. Part 6-1. Measuring methods of optical and electro-optical parameters
23/30475452 DC BS EN IEC 62341-6-1. Organic light emitting diode (OLED) displays - Part 6-1. Measuring methods of optical and electro-optical parameters
20/30430108 DC BS EN IEC 62341-6-1. Organic light emitting diode (OLED) displays. Part 6-1. Measuring methods of optical and electro-optical parameters
21/30440970 DC BS EN IEC 60747-5-16. Semiconductor devices - Part 5-16. Optoelectronic devices. Light emitting diodes. Test method of the flat-band voltage based on the photocurrent spectroscopy
20/30422995 DC BS EN IEC 60747-5-15. Semiconductor devices. Part 5-15. Optoelectronic devices. Light emitting diodes. Test method of the flat-band voltage based on the electroreflectance spectroscopy
23/30433255 DC BS EN ISO 2612. Analysis of natural gas. Biomethane. Determination of ammonia content by Tuneable Diode Laser Absorption Spectroscopy
BS IEC 60747-5-10:2019 Semiconductor devices. Optoelectronic devices. Light emitting diodes. Test method of the internal quantum efficiency based on the room-temperature reference point
BS EN 62560:2012 Self-ballasted LED-lamps for general lighting services by voltage 50 V. Safety specifications
BS EN 62341-6-2:2012 Organic light emitting diode (OLED) displays. Measuring methods of visual quality and ambient performance
BS EN IEC 62149-12:2023 Fibre optic active components and devices. Performance standards - Distributed feedback laser diode device for analogue radio over fibre systems
18/30367367 DC BS IEC 60747-5-62. Semiconductor devices. Part 5-9. Optoelectronic devices. Light emitting diodes. Test method of the internal quantum efficiency based on the temperature-dependent electroluminescence
BS ISO 23946:2020 Fine ceramics (advanced ceramics, advanced technical ceramics). Test methods for optical properties of ceramic phosphors for white light-emitting diodes using a gonio-spectrofluorometer
BS EN 150014:1997 Harmonized system of quality assessment for electronic components - Blank detail specification: Thyristor diodes, transient overvoltage suppressors
BS EN 150014:1995 Harmonized system of quality assessment for electronic components. Blank detail specification: Thyristor diodes, transient overvoltage suppressors
18/30367371 DC BS IEC 60747-5-63. Semiconductor devices. Part 5-10. Optoelectronic devices. Light emitting diodes. Test method of the internal quantum efficiency by the room-temperature reference point

International Electrotechnical Commission (IEC), Rated photodiode

IEC TS 62504:2011 General lighting - LEDs and LED modules - Terms and definitions
IEC 60747-5-8:2019 Semiconductor devices - Part 5-8: Optoelectronic devices - Light emitting diodes - Test method of optoelectronic efficiencies of light emitting diodes
IEC 91/926/PAS:2010 Electronic circuit board for high-brightness LEDs
IEC 60747-5-7:2016 Semiconductor devices - Part 5-7: Optoelectronic devices - Photodiodes and phototransistors
IEC 60747-5-16:2023 Semiconductor devices - Part 5-16: Optoelectronic devices - Light emitting diodes - Test method of the flat-band voltage of GaN-based light emitting diodes based on the photocurrent spectroscopy
IEC 60747-5-11:2019 Semiconductor devices - Part 5-11: Optoelectronic devices - Light emitting diodes - Test method of radiative and nonradiative currents of light emitting diodes
IEC TS 62916:2017 Photovoltaic modules - Bypass diode electrostatic discharge susceptibility testing
IEC 60747-2-2:1993 Semiconductor devices; discrete devices; part 2: rectifier diodes; section 2: blank detail specification for rectifier diodes (including avalanche rectifier diodes), ambient and case-rated, for currents greater than 100 A
IEC 60747-2-1:1989 Semiconductor devices; discrete devices; part 2: rectifier diodes; section one: blank detail specification for rectifier diodes (including avalanche rectifier diodes), ambient and case-rated, up to 100 A
IEC 60747-5-6:2016 Semiconductor devices - Part 5-6: Optoelectronic devices - Light emitting diodes
IEC 60747-5-6:2021 Semiconductor devices - Part 5-6: Optoelectronic devices - Light emitting diodes
IEC 91/928/PAS:2010 Test methods for electronic circuit board for high-brightness LEDs
IEC 62341-2-1:2015 Organic light emitting diode (OLED) displays - Part 2-1: Essential ratings and characteristics of OLED display modules
IEC 60747-5-6:2021 RLV Semiconductor devices - Part 5-6: Optoelectronic devices - Light emitting diodes
IEC TS 63109:2022 Photovoltaic (PV) modules and cells - Measurement of diode ideality factor by quantitative analysis of electroluminescence images
IEC 62341-6-3:2017/COR1:2019 Organic light emitting diode (OLED) displays - Part 6-1: Measuring methods of optical and electro-optical parameters
IEC 62341-6-1:2022 RLV Organic light emitting diode (OLED) displays - Part 6-1: Measuring methods of optical and electro-optical parameters
IEC 62341-6-1:2017 RLV Organic light emitting diode (OLED) displays - Part 6-1: Measuring methods of optical and electro-optical parameters
IEC 62341-6-1:2022 Organic light emitting diode (OLED) displays - Part 6-1: Measuring methods of optical and electro-optical parameters
IEC 62595-2:2012 LCD backlight unit - Part 2: Electro-optical measurement methods of LED backlight unit
IEC 62504:2014 General lighting - Light emitting diode (LED) products and related equipment - Terms and definitions
IEC 62504:2014/AMD1:2018 General lighting - Light emitting diode (LED) products and related equipment - Terms and definitions
IEC 62504:2014+AMD1:2018 CSV General lighting - Light emitting diode (LED) products and related equipment - Terms and definitions
IEC 62384:2006 D.C. or A.C. supplied electronic control gear for LED modules - Performance requirements
IEC 62384:2011 DC or AC supplied electronic control gear for LED modules - Performance requirements
IEC TR 60747-5-12:2021 Semiconductor devices - Part 5-12: Optoelectronic devices - Light emitting diodes - Test method of LED efficiencies
IEC 62341-6-1:2017 Organic light emitting diode (OLED) displays - Part 6-1: Measuring methods of optical and electro-optical parameters
IEC 62341-6-1:2009 Organic light emitting diode (OLED) displays - Part 6-1: Measuring methods of optical and electro-optical parameters
IEC TS 62972:2016 General lighting - Organic light emitting diode (OLED) products and related equipment - Terms and definitions
IEC 60747-5-15:2022 Semiconductor devices - Part 5-15: Optoelectronic devices - Light emitting diodes - Test method of the flat-band voltage based on the electroreflectance spectroscopy
IEC 60747-12-3:1998 Semiconductor devices - Part 12-3: Optoelectronic devices - Blank detail specification for light-emitting diodes - Display application
IEC 62560:2011 Self-ballasted LED-lamps for general lighting services by voltage > 50 V - Safety specifications
IEC 62560:2015 Self-ballasted LED-lamps for general lighting services by voltage > 50 V - Safety specifications
IEC 60700-3:2022 Thyristor valves for high voltage direct current (HVDC) power transmission - Part 3: Essential ratings (limiting values) and characteristics
IEC 61347-2-13:2014 Lamp controlgear - Part 2-13: Particular requirements for d.c. or a.c. supplied electronic controlgear for LED modules
IEC 61347-2-13:2006 Lamp controlgear - Part 2-13: Particular requirements for d.c. or a.c. supplied electronic controlgears for LED modules
IECQ 03-8-2018 IEC Quality Assessment System for Electronic Components (IECQ System) - Rules of Procedure - Part 8: IECQ Scheme for LED Lighting
IEC 60747-5-9:2019 Semiconductor devices - Part 5-9: Optoelectronic devices - Light emitting diodes - Test method of the internal quantum efficiency based on the temperature-dependent electroluminescence
IEC 60747-5-14:2022 Semiconductor devices - Part 5-14: Optoelectronic devices - Light emitting diodes - Test method of the surface temperature based on the thermoreflectance method
IEC 62149-12:2023 Fibre optic active components and devices - Performance standards - Part 12: Distributed feedback laser diode device for analogue radio over fibre systems
IEC 60747-12-6:1997 Semiconductor devices - Part 12-6: Optoelectronic devices - Blank detail specification for avalanche photodiodes with/without pigtail, for fibre optic systems or subsystems
IEC 60747-5-10:2019 Semiconductor devices - Part 5-10: Optoelectronic devices - Light emitting diodes - Test method of the internal quantum efficiency based on the room-temperature reference point
IEC 60747-12-2:1995 Semiconductor devices - Part 12: Optoelectronic devices - Section 2: Blank detail specification for laser diode modules with pigtail for fibre optic systems and sub-systems

Professional Standard - Machinery, Rated photodiode

JB/T 5837-1991 ZP series 2000A and above case-rated rectifier diodes
JB/T 5186-1991 Silicon photodiodes for cameras
JB/T 5836-1991 ZK series 5A and above case-rated fast recovery rectifier diodes

机械电子工业部, Rated photodiode

JB 5837-1991 ZP series case rated rectifier diodes above 2000A

Japanese Industrial Standards Committee (JISC), Rated photodiode

JIS C 8152-2:2012 Photometry of white light emitting diode for general lighting -- Part 2: LED modules and LED light engines
JIS C 5990:1997 General rules of photodiodes for fiber optic transmission
JIS C 8152-2 AMD 1:2014 Photometry of white light emitting diode for general lighting -- Part 2: LED modules and LED light engines (Amendment 1)
JIS C 8152-1:2012 Photometry of white light emitting diode for general lighting -- Part 1: LED packages
JIS C 5991:1997 Measuring methods of photodiodes for fiber optic transmission
JIS C 7036:1985 Measuring methods for light emitting diodes (for indication)
JIS C 62504:2016 General lighting -- Light emitting diode (LED) products and related equipment -- Terms and definitions
JIS C 8156:2011 Self-ballasted LED-lamps for general lighting services by voltage > 50 V -- Safety specifications
JIS C 8156:2017 Self-ballasted LED-lamps for general lighting services by voltage > 50 V -- Safety specifications

YU-JUS, Rated photodiode

JUS N.R1.372-1979 Semiconductor diodes. Essential ratmgs and characteristics: rectifier diodes
JUS N.R1.375-1980 Semiconductor diode s. Essential ratings and characteristics. Variable capacitance diodes
JUS N.R1.374-1980 Semiconductor diodes. Essentialratings and chdracteristics. Ttmneldiodes
JUS N.R1.371-1979 Semiconductor diodes. Essential ratings and characteristics: Voltage reference and voltage regulator diodes

RU-GOST R, Rated photodiode

GOST R 54814-2018 Light emitted diodes and light emitting diode modules for general application. Terms and definitions
GOST R 54814-2011 Light emitted diodes and light emitting diode modules for general application. Terms and definitions
GOST 19656.6-1974 Semiconductor UHF mixer diodes. Measurement methods of standard overall noise figure
GOST 18986.4-1973 Semiconductor diodes. Methods for measuring capacitance
GOST 18986.6-1973 Semiconductor diodes. Method for measuring recovery charge
GOST 18986.0-1974 Semiconductor diodes. Measuring methods for electrical parameters. General requirements
GOST 21107.10-1978 Gas discharge devices. Methods of measurement of electrical parameters of operating and measuring conditions for glow-discharge thyratrons and gas-filled rectifiers
GOST 18986.1-1973 Semiconductor diodes. Method for measuring direct reverse current
GOST 18986.3-1973 Semiconductor diodes. Method of measuring of direct forward voltage and direct forward current
GOST R IEC 62384-2011 Electronic control gear supplied from the sources of direet or alternative current for light emitted diode modules. Performance requirements
GOST 21316.6-1975 Photocells. Determination method of correspondence of current-illumination characteristic of photocell to given linearity limit in continuous operation conditions
GOST 21316.7-1975 Photocells. Determination method of correspondence of current-illumination characteristic of photocell to given linearity limit in pulsed operation conditions
GOST 19656.10-1988 Semiconductor microwave switching and limiter diodes. Methods of measuring loss resistances
GOST R IEC 62560-2011 Self-ballasted LED-lamps for general lighting services by voltage 50 V. Safety specifications

IECQ - IEC: Quality Assessment System for Electronic Components, Rated photodiode

QC 750101/SU 0004-1990 Detail Specification for Electronic Components Semiconductor Diodes@ Ambient-Rated Designated for Circuits in TV Receivers Switching Diodes (Sw)@ Type KD805A
QC 750101/GB 0001 ISSUE 1-1990 Silicon Ambient Rated High Speed Switching Diode in Plastic Encapsulation
QC 750108/ CN 0010-1992 Detail Specification for Electronic Components Ambient- Rated Silicon Rectifier Diode for Type 2CZ305
QC 750108/ CN 0008-1992 Detail Specification for Electronic Components Ambient- Rated Silicon Rectifier Diode for Type 2CZ317
QC 750108/ CN 0006-1992 Detail Specification for Electronic Components Ambient-Rated Silicon Rectifier Diode for Type 2CZ312
QC 750108/ CN 0007-1992 Detail Specification for Electronic Components Ambient-Rated Silicon Rectifier Diode for Type 2CZ313
QC 750108/ CN 0005-1992 Detail Specification for Electronic Components Ambient-Rated Silicon Rectifier Diode for Type 2CZ308
QC 750108/ CN 0009-1992 Detail Specification for Electronic Components Ambient- Rated Silicon Rectifier Diode for Type 2CZ318
PQC 75-1991 Semiconductor Devices - Discrete Devices - Rectifier Diodes Blank Detail Specification: Rectifier Diodes (Including Avalanche Rectifier Diodes)@ Ambient and Case-Rated@ Greater Than 100 A
QC 750108/ CN 0002-1991 Detail Specification for Electronic Components Ambient- Rated Silicon Rectifier Diode for Type 2CZ321 Assessment Level II
QC 750108/ CN 0003-1991 Detail Specification for Electronic Components Ambient- Rated Silicon Rectifier Diode for Type 2CZ322 Assessment Level II
QC 750101/SU 0001-1990 Detail Specification for Electronic Components Signal Semiconductor Epitaxy- Planar Ambient-Rated Diodes for Pulse and Digital Circuits of Electronic Equipment Type KD5I0A
QC 750101/SU 0003-1990 Detail Specification for Electronic Components Signal Semiconductor Epitaxy- Planar Ambient-Rated Diodes for Pulse and Digital Circuits of Electronic Equipment Type KD522B
QC 750101/SU 0002-1990 Detail Specification for Electronic Components Signal Semiconductor Epitaxy-Planar Ambient- Rated Diodes for Pulse and Digital Circuits of Electronic Equipment Type KD52IA@ KD52IB
QC 750103/ CN 0001-1992 Detail Specification for Electronic Components Case-Rated Bipolar Transistors for Low-Frequency Amplification Type 3DD870
QC 750102/ SU 0001-1990 Detail Specification for Electronic Components High- Frequency Epitaxy-Planar Ambient-Rated Bipolar Transistors Type KT3II7A
QC 750103-1989 Semiconductor Devices Discrete Devices Part 7: Bipolar Transistors Section Two - Blank Detail Specification for Case-Rated Bipolar Transistors for Low- Frequency Amplification (IEC 747-7-2 ED 1)
QC 750102/CN 0001-1988 Detail Specification for Electronic Components Bipolar Transistors for Ambient-Rated High- Frequency Amplification of Type 3DG130 Assessment Level II
QC 750102/CN 0003-1990 Detail Specification for Electronic Components Bipolar Transistors for Ambient-Rated High- Frequency Amplification of Type 3DG1815 Assessment Level II

Professional Standard - Electron, Rated photodiode

SJ/T 2216-2015 Technical specification for photodiode of silicon
SJ/T 10055-1991 Detail specification for electronic components--Case rated silicon rectifier diode,Type 2CZ58
SJ/T 10054-1991 Detail specification for electronic components--Case rated silicon rectifier diode for Type 2CZ57
SJ/T 10056-1991 Detail specification for electronic components--Case rated silicon rectifier diode,Type 2CZ59
SJ/T 10057-1991 Detail specification for electronic components--Case rated silicon rectifier diode,Type 2CZ60
SJ/T 2214-2015 Measuring methods for semiconductor photodiode and phototransistor
SJ/T 10058-1991 Detail specification for electronic components.Ambient-rated silicon rectifier diode for type 2CZ103
SJ/T 10060-1991 Detail specification for electronic components.Ambient-rated silicon rectifier diode for type 2CZ117
SJ/T 10059-1991 Detail specification for electronic components.Ambient-rated silicon rectifier diode for type 2CZ116
SJ/T 2354-2015 Measuring methods for photodiodes of PIN、APD
SJ/T 2354-2015/0352 Measuring methods for photodiodes of PIN、APD
SJ 2354.1-1983 General procedures of measurement for electrical and optical parameters of PIN and avalanche photodiodes
SJ 2354.5-1983 Method of measurement for capacitance of PIN and avalanche photodiodes
SJ 50033/102-1995 Detail specification for InGaAs/InP PIN photodiode for type GD 218
SJ 2214.10-1982 Method of measurement for light current of semiconductor photodiodes and phototransistors
SJ 50033/112-1996 Scmiconductor optoelectronic devices.Detail specification for type GD3251Y photodiodes
SJ 50033/113-1996 Semiconductor optoelectronic devices.Detail specification for type GD3252Y photodiodes
SJ 2354.3-1983 Method of measurement for dark current of PIN and avalanche photodiodes
SJ 20644.1-2001 Semiconductor optoelectronic devices Detail specification for type GD3550Y PIN photodiode
SJ 20644.2-2001 Semiconductor optoelectronic devices Detail specification for type GD101 PIN photodiode
SJ 2354.10-1983 Method of measurement for cross-light factor of PIN and avalanche photodiodes matrix
SJ 2354.6-1983 Method of measurement for responsivity of PIN and avalanche photodiodes
SJ 2354.13-1983 Method of measurement for multiplication factor of PIN and avalanche photodiodes
SJ 2214.3-1982 Method of measurement for dark current of semiconductor photodiodes
SJ 2214.5-1982 Method of measurement for junction capacitance of semiconductor photodiodes
SJ/T 10952-1996 Detailed specifications for electronic components - 2CZ323 ambient-rated silicon rectifier diodes (Applicable for certification)
SJ/T 10950-1996 Detailed specifications for electronic components - 2CZ322 ambient-rated silicon rectifier diodes (Applicable for certification)
SJ/T 10951-1996 Detailed specifications for electronic components - 2CZ33 ambient-rated silicon rectifier diodes (Applicable for certification)
SJ/T 10953-1996 Detailed specifications for electronic components - 2CZ324Q ambient-rated silicon rectifier diodes (Applicable for certification)
SJ/T 10949-1996 Detailed specifications for electronic components - 2CZ321 ambient-rated silicon rectifier diodes (Applicable for certification)
SJ/T 11403-2009 Laser diode modules used for telecommunication.Reliability assessment
SJ 2354.4-1983 Method of measurement for forward voltage drop of PIN and avalanche photodiodes
SJ 2354.2-1983 Method of measurement for reverse break-down voltage of PIN and avalanche photodiodes
SJ 50033/136-1997 Semiconductor optoelectronic devices.Detail specification for red light emitting diode for type GF116
SJ 50033/143-1999 Semiconductor optoelectronic devices.Detail specification for type GF1120 red emitting diode
SJ 50033/137-1997 Semiconductor optoelectronic devices.Detail specification for orange-red light emitting diode for type GF216
SJ 50033/139-1998 Semiconductor optoelectronic devices.Detail specification for green light-emitting diode for type GF4111
SJ 50033/138-1998 Semiconductor optoelectronic devices.Detail specification for yellow light-emitting diode for type GF318
SJ 50033/58-1995 Semiconductor optoelectronic device Detail specification for green light emitting diode for type GF413
SJ/T 11393-2009 Semiconductor optoelectronic devices-Blank detail specification for power light-emitting diodes
SJ 50033/142-1999 Semiconductor optoelectronic devices.Detail specification for type GF4112 green emitting diode
SJ 50033/57-1995 Semiconductor optoelectronic device Detail specification for red light emitting diode for type GF115
SJ/Z 9171-1995 Specifications for determination of φ3mm green LEDs used for VCR
SJ 2354.14-1983 Method of measurement for excess noise factor of PIN and avalanche photodiodes
SJ 2215.6-1982 Method of measurement for junction capacitance of semiconductor photocouplers (diodes)
SJ/T 11866-2022 Semiconductor optoelectronic devices - Detailed specifications for silicon substrate white light power light emitting diodes
SJ/T 11400-2009 Semiconductor optoeletronic devices-Blank detail specification for lower-power light-emitting diodes
SJ 2138-1982 Methods of measurement for regulated current of silicon current regulator diodes
SJ 2354.11-1983 Method of measurement for width of blind zone of PIN and avalanche photodiode matrix
SJ 2215.3-1982 Method of measurement for forward current of semiconductor photocouplers (diodes)
SJ 2214.4-1982 Method of measurement for reverse break-down voltage of semiconductor photodiodes
SJ 2215.4-1982 Method of measurement for reverse current of semiconductor photocouplers (diodes)
SJ 2354.9-1983 Method of measurement for noise equivalent power of PIN and avalanche photodiodes
SJ 50033/99-1995 Semiconductor optoelectronic devices.Detail specification for o/G double colour light emitting diode for type GF511
SJ 20642.7-2000 Semiconductor opto-electronic devices Detail specification for type GR1325J light emitting diode module
SJ/T 11817-2022 Blank detailed specification for light-emitting diodes for semiconductor optoelectronic devices, filament lamps
SJ 2354.7-1983 Method of measurement for spectral response curve and spectral response range of PIN and avalanche photodiodes
SJ 2354.12-1983 Method of measurement for temperature factor of reverse breakdown voltage of PIN and avalanche photodiodes
SJ 50033/109-1996 Semiconductor optoelectronic devices.Detail specification for types GJ9031T and GJ9032T and GJ9034T semiconductor laser diodes
SJ 2354.8-1983 Method of measurement for pulse rise time and fall time of PIN and avalanche photodiodes
SJ 50033/110-1996 Semiconductor optoelectronic devices.Detail specification for type GR9413 infrared light emitting diode
SJ 2215.5-1982 Method of measurement for reverse breakdown voltage of semiconductor photocouplers (diodes)
SJ 53930/1-2002 Semiconductor optoelectronic devices Detail specification for type GR8813 infrared emitting diode
SJ 2658.4-1986 Methods of measurement for semiconductor infrared diodes Methods of measurement for capacitance
SJ 2672.7-1986 Detail specification for electronic components--Case-rated 175MHz low voltage bipolar power transistors,Type 3DA307
SJ/T 10947-1996 Detailed specifications for electronic components - FG341052 and FG343053 semiconductor green light emitting diodes
SJ 2658.3-1986 Methods of measurement for semiconductor infrared diodes Methods of measurement for backward voltage
SJ 2672.2-1986 Detail specification for electronic components--Case-rated 175Mhz low voltage bipolar power transistors,Type 3DA302
SJ 2672.3-1986 Detail specification for electronic components--Case-rated 175MHz low voltage bipolar power transistors,Type 3DA303
SJ 2672.4-1986 Detail specification for electronic components--Case-rated 175MHz low voltag bipolar power transistors,Type 3DA304
SJ 2672.5-1986 Detail specification for electronic components--Case-rated 175MHz low voltage bipolar power transistors,Type 3DA305
SJ 2672.6-1986 Detail specification for electronic components--Case-rated 175MHz low voltage bipolar power transistors,Type 3DA306
SJ 2672.8-1986 Detail specification for electronic components--Case-rated 175MHz low voltage bipolar power transistors,Type 3DA308
SJ 2672.9-1986 Detail specification for electronic components--Case-rated 175MHz low voltage bipolar power transistors,Type 3DA309
SJ 2673.1-1986 Detail specification for electronic components--Case-rated 470MHz low voltage bipolar power transistors,Type 3DA311
SJ 2673.2-1986 Detail specification for electronic components--Case-rated 470MHz low voltage bipolar power transistors,Type 3DA312
SJ 2673.3-1986 Detail specification for electronic components--Case-rated 470MHz low voltage bipolar power transistors,Type 3DA313
SJ 2673.4-1986 Detail specification for electronic components--Case-rated 470MHz low voltage bipolar power transistors,Type 3DA314
SJ 2673.5-1986 Detail specification for electronic components--Case-rated 470MHz low voltage bipolar power transistors,Type 3DA315
SJ 2673.6-1986 Detail specification for electronic components--Case-rated 470MHz low voltage bipolar transistors,Type 3DA316
SJ 2672.1-1986 Detail specification for electronic components--Case-rated 175MHz low voltage bipolar power transistors,Type 3DA301
SJ/T 2658.16-2016 Measuring method for semiconductor infrared-emitting diode.Part 16: Photo-electric conversion efficiency
SJ/T 10948-1996 Detailed specifications for electronic components - FG313052, FG314053, FG313054 and FG314055 semiconductor red light emitting diodes
SJ 3124-1988 Detail specification for electronic components--Case-rated bipolar transistors for silicon NPN low frequency amplification,Type 3DD1942
SJ 3125-1988 Detail specification for electronic components--Case-rated bipolar transistors for silicon NPN low frequency amplification,Type 3DD2027
SJ 3126-1988 Detail specification for electronic components--Case-rated bipolar transistors for silicon NPN low frequency amplification,Type 3DD869
SJ 3127-1988 Detail specification for electronic components--Case-rated bipolar transistors for silicon NPN low frequency amplification,Type 3DD871
SJ 3128-1988 Detail specification for electronic components--Case-rated bipolar transistors for silicon NPN low frequency amplification,Type 3DD820
SJ 3123-1988 Detail specification for electronic components--Ambient-rated bipolar transistors for high frequency amplification,Type 3DG1779
SJ 2658.5-1986 Methods of measurement for semiconductor infrared diodes Methods of measurement for forward series resistance
SJ/T 10049-1991 Detail specification for electronic components.Case rated bipolar transistor for silicon NPN high-frequency amplification for type 3DA1162
SJ/T 10050-1991 Detail specification for electronic components.Case rated bipolar transistor for silicon NPN high-frequency amplification for type 3DA1722
SJ/T 10051-1991 Detail specification for electronic components.Case rated bipolar transistor for silicon NPN high-frequency amplification for type 3DA 2688
SJ/T 10052-1991 Detail specification for electronic components.Case rated bipolar transistor for silicon PNP low-frequency amplification for type 3CD 507
SJ 3120-1988 Detail specification for electronic component--Ambient-rated bipolar transistors for high frequency amplification,Type 3DG1215
SJ 3121-1988 Detail specification for electronic components--Ambient-rated bipolar transistors for high frequency amplification,Type 3DG2464
SJ 3122-1988 Detail specification for electronic components--Ambient-rated bipolar transistors for high frequency amplification,Type 3DG3177
SJ/T 10959-1996 Detailed specifications for electronic components - 3CT320 case-rated avalanche triode thyristors (Applicable for certification)
SJ/T 10053-1991 Detail specification for electronic components.Case rated bipolar transistor for silicon NPN low-frequency amplification for type 3DD 313
SJ/T 10886-1996 Detailed specifications for electronic components - 3DD201 bipolar transistors for low frequency amplification case (Applicable for certification)
SJ/T 10885-1996 Detailed specifications for electronic components -3DA150B and 3DA150C bipolar transistors for high frequency amplification case (Applicable for certification)
SJ/T 10958-1996 Detailed specifications for electronic components - 3CT320 case-rated reverse blocking triode thyristors (Applicable for certification)
SJ/T 10887-1996 Detailed specifications for electronic components -3DD102B bipolar transistors for low frequency amplification case (Applicable for certification)
SJ/T 10973-1996 Detailed specifications for electronic components - 3DD200 bipolar transistors for silicon NPN low frequency amplification case (Applicable for certification)
SJ/T 10955-1996 Detailed specifications for electronic components - 3DG107 ambient-rated bipolar transistors for low and high frequency amplification (Applicable for certification)
SJ/T 11052-1996 Detailed specifications for electronic components - 3DG162 ambient-rated bipolar transistors for low and high frequency amplification (Applicable for certification)
SJ/T 11054-1996 Detailed specifications for electronic components - 3DG140 ambient-rated bipolar transistors for low and high frequency amplification (Applicable for certification)
SJ/T 11053-1996 Detailed specifications for electronic components - 3DG182 ambient-rated bipolar transistors for low and high frequency amplification (Applicable for certification)
SJ/T 11060-1996 Detailed specifications for electronic components - 3DG3130 ambient-rated bipolar transistors for low and high frequency amplification (Applicable for certification)
SJ/T 10833-1996 Detailed specifications for electronic components - 3DG80 ambient-rated bipolar transistors for low and high frequency amplification (Applicable for certification)
SJ/T 10772-1996 Detailed specifications for electronic components - 3DG201C ambient-rated bipolar transistors for low and high frequency amplification (Applicable for certification)
SJ/T 10837-1996 Detailed specifications for electronic components -3DG131A, 3DG131B and 3DG131C ambient-rated bipolar transistors for high frequency amplification (Applicable for certification)
SJ/T 10770-1996 Detailed specifications for electronic components - 3DG130A-3DG130D ambient-rated bipolar transistors for low and high frequency amplification (Applicable for certification)

CZ-CSN, Rated photodiode

CSN 35 8761-1973 Semiconductor devices. Phototransistors photodíodes. Measurement of photoelectric current
CSN 35 8762-1973 Semiconductor devices. Phototransistors photodiodes. Measurement of dark current
CSN IEC 747-2-1:1993 Semiconductor devices. Diskrete devices. Part 2: Rectifier diodes. Section 1 - Blank detail specification for rectifier diodes (including avalanche diodes), ambient and case-rated, up to 100A
CSN 35 8585 Cast.3-1987 Color television picture tubes. Measuring methods of white light screen luminance and determination of ratio of anodě currents at white light

Professional Standard - Post and Telecommunication, Rated photodiode

YD/T 835-1996 Test method of avalanche photodiodes

邮电部, Rated photodiode

YD/T 0835-1996 Avalanche photodiode detection method

IN-BIS, Rated photodiode

工业和信息化部, Rated photodiode

SJ/T 11461.2-2016 Organic Light Emitting Diode Display Devices Part 2: Basic Ratings and Characteristics

Group Standards of the People's Republic of China, Rated photodiode

T/COEMA 004LCD-2022 Polarizer film for the Organic Light-Emitting Diode TV Display
T/CVIA 59-2016 Organic Light Emitting Diode (OLED) TV Measurement Methods
T/CVIA 11-2016 Organic Light Emitting Diode (OLED) TV Measurement Methods
T/CVIA 58-2016 General Technical Requirements for Organic Light Emitting Diode (OLED) TVs
T/CVIA 10-2016 General Technical Requirements for Organic Light Emitting Diode (OLED) TVs
T/CSA 048-2019 Measurement of Electrical and Photometric Characteristics for General Lighting LEDs under Different Currents / Temperatures

General Administration of Quality Supervision, Inspection and Quarantine of the People‘s Republic of China, Rated photodiode

GB/T 16894-1997 Blank detail specification for rectifier diodes (including avalanche rectifier diodes), ambient and case-rated, for currents greater than 100A
GB/T 23729-2009 Photodiodes for scintillation detectors.Test procedures
GB/T 6351-1998 Semiconductor devices--Discrete devices. Part 2: Rectifier diodes. Section One--Blank detail specification for rectifier diodes(including avalanche rectifier diodes), ambient and case-rated, up to 100A
GB/T 15651.6-2023 Semiconductor Devices Part 5-6: Optoelectronic Devices Light Emitting Diodes
GB/T 42243-2022 General technical specification for organic light emitting diode(OLED) television
GB/T 36359-2018 Semiconductor optoelectronic devices.Blank detail specification for lower power light-emitting diodes
GB/T 36360-2018 Semiconductor optoelectronic devices.Blank detail specification for middle power light-emitting diodes
GB/T 20871.61-2013 Organic light emitting diode (OLED) displays.Part 6-1:Measuring methods of optical and electro-optical parameters
GB/T 18904.3-2002 Semiconductor devices--Part 12-3: Optoelectronic devices--Blank detail specification for light-emitting diodes--Display application
GB 9520-1988 Detail specification for electronic components 3DD200 type silicon NPN low frequency amplifying case rated bipolar transistors (available for certification)
GB/T 18904.5-2003 Semiconductor devices Part 12-5: Optoelectronic devices Blank detail specification for pin-photodiodeswith/without pigtail for fibre optic systems or subsystems
GB/T 6590-1998 Semiconductor devices Discrete devices Part 6: Thyristors Section Two-Blank detail specification for bidirectional triode thyristors(triacs),ambient or case-rated,up to 100A
GB/T 13150-2005 Semiconductor devices-Discrete devices-Blank detail specification for bidirectional triode thyristors(triacs),ambient and case-rated,for currents greater than 100A
GB/T 18904.2-2002 Semiconductor devices-Part 12-2: Optoelectronic devices-Blank detail specification for laser diodes modules with pigtail for fiber optic systems or sub-systems

PT-IPQ, Rated photodiode

NP 3234-2-1987

NEMA - National Electrical Manufacturers Association, Rated photodiode

NEMA C78.51-2016 Electric Lamps - LED (Light Emitting Diode) Lamps - Method of Designation
NEMA C78.52-2017 Electric Lamps - LED (Light Emitting Diode) Direct Replacement Lamps - Method of Designation

RO-ASRO, Rated photodiode

STAS 12258/2-1984 Optoelectronic semiconductor devices PIIOTODIODES Terminology and essentia] characteristics
STAS 12258/4-1986 Optoelectronic semiconductor devices LIGHT EMITTING DIODES Terminology and main characteristics
STAS 12258/6-1987 OPTOELECTRONIC SEMICON- DUCTOR DEVICES INFRARED EMM1TING DIODES Terminology and essential characteristics

PL-PKN, Rated photodiode

PN T01010 ArkusZ05-1974 Electronic tubes Vacuum diodes Terms and definitions
PN T01504-67-1987 Diodes Measuring methods Series equivalent resistance

TH-TISI, Rated photodiode

TIS 1596-1999 Semiconductor devices.discrete devices.part 2: rectifier diodes section 2: blank detail specification for rectifier diodes (including avalanche rectifier diodes), ambient and case-rated, for currents greater than 100 a

Defense Logistics Agency, Rated photodiode

DLA MIL-DTL-3976/1 B-2007 LIGHT EMITTING DIODE (LED), MARKER CLEARANCE-BLACKOUT, 14 AND 28 VOLT
DLA DSCC-DWG-94030 REV B-2001 SEMICONDUCTOR DEVICE, UNIDIRECTIONAL TRANSIENT SUPPRESSOR DIODE ARRAY
DLA MIL-DTL-28803/1 E-2013 DISPLAY, OPTOELECTRONIC, SEGMENTED READOUT, BACKLIGHTED, STYLE II (LIGHT EMITTING DIODE), RFI SHIELDED, MOISTURE SEALED, HIGH IMPACT SHOCK, TYPE R01

国家市场监督管理总局、中国国家标准化管理委员会, Rated photodiode

GB/T 36358-2018 Semiconductor optoelectronic devices—Blank detail specification for power light-emitting diodes
GB/T 37946-2019 Test method of thermal stability of materials for organic light emitting diode display (OLED)
GB/T 37949-2019 Purity test method of small molecule materials applied in organic light emitting diode display (OLED)—High performance liquid chromatography (HPLC)

IEC - International Electrotechnical Commission, Rated photodiode

TS 62916-2017 Photovoltaic modules – Bypass diode electrostatic discharge susceptibility testing (Edition 1.0)

American Society for Testing and Materials (ASTM), Rated photodiode

ASTM C1307-21 Standard Test Method for Plutonium Assay by Plutonium (III) Diode Array Spectrophotometry
ASTM C1307-15 Standard Test Method for Plutonium Assay by Plutonium (III) Diode Array Spectrophotometry
ASTM D7904-15 Standard Test Method for Determination of Water Vapor (Moisture Concentration) in Natural Gas by Tunable Diode Laser Spectroscopy (TDLAS)
ASTM D7904-21 Standard Test Method for Determination of Water Vapor (Moisture Concentration) in Natural Gas by Tunable Diode Laser Spectroscopy (TDLAS)
ASTM F3095-17 Standard Practice for Laser Technologies for Direct Measurement of Cross Sectional Shape of Pipeline and Conduit by Rotating Laser Diodes and CCTV Camera System
ASTM D8488-22 Standard Test Method for Determination of Hydrogen Sulfide (H2S) in Natural Gas by Tunable Diode Laser Spectroscopy (TDLAS)
ASTM F3095-14 Standard Practice for Laser Technologies for Direct Measurement of Cross Sectional Shape of Pipeline and Conduit by Rotating Laser Diodes and CCTV Camera System
ASTM F3095-17a Standard Practice for Laser Technologies for Direct Measurement of Cross Sectional Shape of Pipeline and Conduit by Rotating Laser Diodes and CCTV Camera System
ASTM F3095-17a(2022) Standard Practice for Laser Technologies for Direct Measurement of Cross Sectional Shape of Pipeline and Conduit by Rotating Laser Diodes and CCTV Camera System

未注明发布机构, Rated photodiode

BS EN 150008:1993(1999) Specification for Harmonized system of quality assessment for electronic components — Blank detail specification — Ambient - rated rectifier diodes
BS EN 150009:1993(2000) Specification for Harmonized system of quality assessment for electronic components — Blank detail specification — Case - rated rectifier diodes
BS EN 120008:1995(2000) Specification for Harmonized system of quality assessment for electronic components — Blank detail specification — Light emitting diodes and infrared emitting diodes for fibre optic system or sub - system
BS EN 120006:1993(1999) Specification for Harmonized system of quality assessment for electronic components — Blank detail specification — Pin - photodiodes for fibre optic applications

中华人民共和国国家质量监督检验检疫总局、中国国家标准化管理委员会, Rated photodiode

GB/T 33762-2017 Method of measurement for display performance of organic light-emitting diode(OLED) television

GB-REG, Rated photodiode

REG NASA-LLIS-1840--2006 Lessons Learned - CALIPSO Avalanche Photodiode (APD) Detector Assembly Electrical Failure
REG NASA-LLIS-0989-2001 Lessons Learned ?ETU Laser Diode Pump Array Failure - Indium gasket short between contacts caused electrical failure

KR-KS, Rated photodiode

KS C IEC 62341-6-1-2020 Organic light emitting diode(OLED) displays — Part 6-1: Measuring methods of optical and electro-optical parameters
KS C IEC 62504-2020 General lighting — Light emitting diode(LED) products and related equipment — Terms and definitions
KS C IEC TS 62972-2018 General lighting — Organic light emitting diode (OLED) products and related equipment — Terms and definitions

National Electrical Manufacturers Association（NEMA), Rated photodiode

NEMA C78.374-2015 Electric Lamps - Light-Emitting Diode Package Specification Sheet for General Illumination Applications

Danish Standards Foundation, Rated photodiode

DS/EN 62341-6-1:2011 Organic light emitting diode (OLED) displays - Part 6-1: Measuring methods of optical and electro-optical parameters
DS/IEC 747-2-1:1990 Semiconductor devices. Discrete devices. Part 2: Rectifier diodes. Section one: Blank detail specification for rectifier diodes (including avalanche rectifier diodes), ambient and case-rated, up to 100 A

European Committee for Electrotechnical Standardization（CENELEC）, Rated photodiode

EN 62341-6-1:2011 Organic light emitting diode (OLED) displays - Part 6-1: Measuring methods of optical and electro-optical parameters
EN 62504:2014 General lighting - Light emitting diode (LED) products and related equipment - Terms and definitions
EN IEC 62149-12:2023 Fibre optic active components and devices - Performance standards - Part 12: Distributed feedback laser diode device for analogue radio over fibre systems

GOSTR, Rated photodiode

GOST IEC 62341-6-1-2016 Organic light emitting diode (OLED) displays. Part 6-1. Measuring methods of optical and electro-optical parameters
GOST R 58229-2018 Organic light emitting diodes for general lighting and related equipment. Terms and definitions

International Organization for Standardization (ISO), Rated photodiode

ISO/FDIS 2612:2023 Analysis of natural gas — Biomethane — Determination of ammonia content by tuneable diode laser absorption spectroscopy
ISO/DIS 2612 Analysis of natural gas — Biomethane — Determination of ammonia content by Tuneable Diode Laser Absorption Spectroscopy

AENOR, Rated photodiode

UNE-EN 62504:2015 General lighting - Light emitting diode (LED) products and related equipment - Terms and definitions

Military Standard of the People's Republic of China-General Armament Department, Rated photodiode

GJB 33/15-2011 Semiconductor optoelectronic device.Detail specification for type BT401 semiconductor infrared-emitting diode

Taiwan Provincial Standard of the People's Republic of China, Rated photodiode

CNS 13780-1996 Endurance Testing Methods for Infrared Emitting Diodes (for Automation)-Continuously Applying Voltage Test
CNS 13090-1992 Method of Endurance Test for Light Emitting Diode Big Lamps (for Outdoor Display)-Continuouus Applying Current Test

International Commission on Illumination (CIE), Rated photodiode

CIE S 017-SP1/E-2015 ILV: International Lighting Vocabulary - Supplement 1: Light Emitting Diodes (LEDs) and LED Assemblies - Terms and Definitions

HU-MSZT, Rated photodiode

MSZ 11453/2-1987

European Committee for Standardization (CEN), Rated photodiode

prEN ISO 2612 Analysis of natural gas - Biomethane - Determination of ammonia content by Tuneable Diode Laser Absorption Spectroscopy (ISO/DIS 2612:2023)

American National Standards Institute （ANSI), Rated photodiode

BS EN IEC 60700-3:2022 Thyristor valves for high voltage direct current (HVDC) power transmission Essential ratings (limiting values) and characteristics (British Standard)

Institute of Electrical and Electronics Engineers (IEEE), Rated photodiode

IEEE 1789-2015 Recommended Practices for Modulating Current in High-Brightness LEDs for Mitigating Health Risks to Viewers