ZH
RU
ES

monolithic photodiode

monolithic photodiode, Total:286 items.

In the international standard classification, monolithic photodiode involves: Semiconducting materials, Semiconductor devices, Optoelectronics. Laser equipment, Lamps and related equipment, Optics and optical measurements, Fibre optic communications, Printed circuits and boards, Audio, video and audiovisual engineering, Television and radio broadcasting, Integrated circuits. Microelectronics, Nuclear energy engineering, Solar energy engineering, Small craft, Electronic display devices, Electronic tubes, Dentistry, Electrical and electronic testing, Environmental testing.

Professional Standard - Electron, monolithic photodiode

SJ/T 11470-2014 Epitaxial wafers of light-emitting diodes
SJ/T 11471-2014 Measurement methods for epitaxial wafers of light-emitting diodes
SJ/T 11399-2009 Measurement methods for chips of light emitting diodes
SJ/T 11396-2009 The sapphire substrates for nitride based light-emitting diode
SJ/T 2216-2015 Technical specification for photodiode of silicon
SJ/T 11869-2022 Detailed specifications for silicon substrate white light power light emitting diode chips
SJ/T 11868-2022 Detailed specifications for silicon substrate blue power light emitting diode chips
SJ/T 11398-2009 Technical specification for power light-emitting diode chips
SJ/T 11867-2022 Detailed specifications for silicon substrate blue light low-power light-emitting diode chips
SJ/T 2214-2015 Measuring methods for semiconductor photodiode and phototransistor
SJ/T 2354-2015 Measuring methods for photodiodes of PIN、APD
SJ/T 2354-2015/0352 Measuring methods for photodiodes of PIN、APD
SJ 2354.1-1983 General procedures of measurement for electrical and optical parameters of PIN and avalanche photodiodes
SJ 2354.5-1983 Method of measurement for capacitance of PIN and avalanche photodiodes
SJ 50033/102-1995 Detail specification for InGaAs/InP PIN photodiode for type GD 218
SJ 2214.10-1982 Method of measurement for light current of semiconductor photodiodes and phototransistors
SJ 50033/112-1996 Scmiconductor optoelectronic devices.Detail specification for type GD3251Y photodiodes
SJ 50033/113-1996 Semiconductor optoelectronic devices.Detail specification for type GD3252Y photodiodes
SJ 2354.3-1983 Method of measurement for dark current of PIN and avalanche photodiodes
SJ 20644.1-2001 Semiconductor optoelectronic devices Detail specification for type GD3550Y PIN photodiode
SJ 20644.2-2001 Semiconductor optoelectronic devices Detail specification for type GD101 PIN photodiode
SJ 2354.10-1983 Method of measurement for cross-light factor of PIN and avalanche photodiodes matrix
SJ 2354.6-1983 Method of measurement for responsivity of PIN and avalanche photodiodes
SJ 2354.13-1983 Method of measurement for multiplication factor of PIN and avalanche photodiodes
SJ 2214.3-1982 Method of measurement for dark current of semiconductor photodiodes
SJ 2214.5-1982 Method of measurement for junction capacitance of semiconductor photodiodes
SJ 2354.4-1983 Method of measurement for forward voltage drop of PIN and avalanche photodiodes
SJ 2354.2-1983 Method of measurement for reverse break-down voltage of PIN and avalanche photodiodes
SJ 50033/136-1997 Semiconductor optoelectronic devices.Detail specification for red light emitting diode for type GF116
SJ 50033/143-1999 Semiconductor optoelectronic devices.Detail specification for type GF1120 red emitting diode
SJ 50033/137-1997 Semiconductor optoelectronic devices.Detail specification for orange-red light emitting diode for type GF216
SJ 50033/139-1998 Semiconductor optoelectronic devices.Detail specification for green light-emitting diode for type GF4111
SJ 50033/138-1998 Semiconductor optoelectronic devices.Detail specification for yellow light-emitting diode for type GF318
SJ 50033/58-1995 Semiconductor optoelectronic device Detail specification for green light emitting diode for type GF413
SJ/T 11393-2009 Semiconductor optoelectronic devices-Blank detail specification for power light-emitting diodes
SJ 50033/142-1999 Semiconductor optoelectronic devices.Detail specification for type GF4112 green emitting diode
SJ 50033/57-1995 Semiconductor optoelectronic device Detail specification for red light emitting diode for type GF115
SJ 2354.14-1983 Method of measurement for excess noise factor of PIN and avalanche photodiodes
SJ 2215.6-1982 Method of measurement for junction capacitance of semiconductor photocouplers (diodes)
SJ/T 11866-2022 Semiconductor optoelectronic devices - Detailed specifications for silicon substrate white light power light emitting diodes
SJ/T 11400-2009 Semiconductor optoeletronic devices-Blank detail specification for lower-power light-emitting diodes
SJ 2354.11-1983 Method of measurement for width of blind zone of PIN and avalanche photodiode matrix
SJ 2215.3-1982 Method of measurement for forward current of semiconductor photocouplers (diodes)
SJ 2214.4-1982 Method of measurement for reverse break-down voltage of semiconductor photodiodes
SJ 2215.4-1982 Method of measurement for reverse current of semiconductor photocouplers (diodes)
SJ 2354.9-1983 Method of measurement for noise equivalent power of PIN and avalanche photodiodes
SJ 50033/99-1995 Semiconductor optoelectronic devices.Detail specification for o/G double colour light emitting diode for type GF511
SJ 20642.7-2000 Semiconductor opto-electronic devices Detail specification for type GR1325J light emitting diode module
SJ/T 11817-2022 Blank detailed specification for light-emitting diodes for semiconductor optoelectronic devices, filament lamps
SJ 2354.7-1983 Method of measurement for spectral response curve and spectral response range of PIN and avalanche photodiodes
SJ 2354.12-1983 Method of measurement for temperature factor of reverse breakdown voltage of PIN and avalanche photodiodes
SJ 50033/109-1996 Semiconductor optoelectronic devices.Detail specification for types GJ9031T and GJ9032T and GJ9034T semiconductor laser diodes
SJ 2354.8-1983 Method of measurement for pulse rise time and fall time of PIN and avalanche photodiodes
SJ 50033/110-1996 Semiconductor optoelectronic devices.Detail specification for type GR9413 infrared light emitting diode
SJ 2215.5-1982 Method of measurement for reverse breakdown voltage of semiconductor photocouplers (diodes)
SJ 53930/1-2002 Semiconductor optoelectronic devices Detail specification for type GR8813 infrared emitting diode
SJ 2658.4-1986 Methods of measurement for semiconductor infrared diodes Methods of measurement for capacitance
SJ/T 10947-1996 Detailed specifications for electronic components - FG341052 and FG343053 semiconductor green light emitting diodes
SJ 2658.3-1986 Methods of measurement for semiconductor infrared diodes Methods of measurement for backward voltage
SJ/T 2658.16-2016 Measuring method for semiconductor infrared-emitting diode.Part 16: Photo-electric conversion efficiency
SJ/T 10948-1996 Detailed specifications for electronic components - FG313052, FG314053, FG313054 and FG314055 semiconductor red light emitting diodes
SJ 2658.5-1986 Methods of measurement for semiconductor infrared diodes Methods of measurement for forward series resistance

Taiwan Provincial Standard of the People's Republic of China, monolithic photodiode

CNS 13808-1997 Epitaxial Wafers for Light Emitting Diodes
CNS 13806-1997 Method of Measurement for Emission Wavelength and Luminous Intensity of Epitaxial Wafers of Light Emitting Diodes
CNS 13780-1996 Endurance Testing Methods for Infrared Emitting Diodes (for Automation)-Continuously Applying Voltage Test
CNS 13090-1992 Method of Endurance Test for Light Emitting Diode Big Lamps (for Outdoor Display)-Continuouus Applying Current Test
CNS 6121-1988 Environmental Testing Methods and Endurance Testing Methods for Discrete Semiconductor Devices(Continuous Applying Voltage Test of Rectifier Diodes)

Group Standards of the People's Republic of China, monolithic photodiode

T/COEMA 004LCD-2022 Polarizer film for the Organic Light-Emitting Diode TV Display
T/ZZB 2332-2021 Polished sapphire substrate for LED
T/COEMA 003LCD-2022 Polarizer film for the Mid-small size organic light-emitting diode display
T/QGCML 030-2020 Conventional Electrical Standards for Diode Diffusion Sheets
T/CVIA 59-2016 Organic Light Emitting Diode (OLED) TV Measurement Methods
T/CVIA 11-2016 Organic Light Emitting Diode (OLED) TV Measurement Methods
T/CVIA 58-2016 General Technical Requirements for Organic Light Emitting Diode (OLED) TVs
T/CVIA 10-2016 General Technical Requirements for Organic Light Emitting Diode (OLED) TVs
T/CSA 048-2019 Measurement of Electrical and Photometric Characteristics for General Lighting LEDs under Different Currents / Temperatures

Fujian Provincial Standard of the People's Republic of China, monolithic photodiode

DB35/T 1193-2011 Semiconductor LED chip
DB35/T 1370-2013 Light-emitting diode chip point test method

Professional Standard - Military and Civilian Products, monolithic photodiode

WJ 2100-2004 Test method for silicon photodiodes and silicon avalanche photodiodes
WJ 2265-1995 Specifications for Preamplified Silicon Avalanche Photodiodes
WJ 2506-1998 Verification Regulations for Photodiode Dynamic Tester

Defense Logistics Agency, monolithic photodiode

DLA SMD-5962-96843 REV D-2008 MICROCIRCUIT, LINEAR, VOLTAGE REFERENCE DIODE, 1.2 VOLTS, MONOLITHIC SILICON
DLA SMD-5962-90538 REV D-2003 MICROCIRCUIT, LINEAR, QUAD SCHOTTKY DIODE ARRAY, MONOLITHIC SILICON
DLA SMD-5962-00523 REV F-2006 MICROCIRCUIT, LINEAR, RADIATION HARDENED, 2.5 V SHUNT DIODE REGULATOR, MONOLITHIC SILICON
DLA SMD-5962-00523 REV G-2008 MICROCIRCUIT, LINEAR, RADIATION HARDENED, 2.5 V SHUNT DIODE REGULATOR, MONOLITHIC SILICON
DLA SMD-5962-00523 REV J-2010 MICROCIRCUIT, LINEAR, RADIATION HARDENED, 2.5 V SHUNT DIODE REGULATOR, MONOLITHIC SILICON
DLA SMD-5962-00523 REV K-2011 MICROCIRCUIT, LINEAR, RADIATION HARDENED, 2.5 V SHUNT DIODE REGULATOR, MONOLITHIC SILICON
DLA MIL-M-38510/210 F-2013 MICROCIRCUIT, DIGITAL, 16,384 BIT SCHOTTKY, BIPOLAR, PROGRAMMABLE READ-ONLY MEMORY (PROM), MONOLITHIC SILICON
DLA MIL-M-38510/211 (1)-2012 MICROCIRCUITS, DIGITAL, 32,768 BIT SCHOTTKY, BIPOLAR, PROGRAMMABLE READ-ONLY MEMORY (PROM), MONOLITHIC SILICON
DLA SMD-5962-89549-1989 MICROCIRCUITS, DIGITAL, BIPOLAR, PIPELINE REGISTER WITH SHADOW REGISTER, MONOLITHIC SILICON
DLA SMD-5962-97553 REV A-2006 MICROCIRCUIT, DIGITAL, BIPOLAR, TTL, MONOSTABLE MULTIVIBRATOR, MONOLITHIC SILICON
DLA MIL-DTL-3976/1 B-2007 LIGHT EMITTING DIODE (LED), MARKER CLEARANCE-BLACKOUT, 14 AND 28 VOLT
DLA MIL-M-38510/343 B VALID NOTICE 1-2009 Microcircuits, Digital, Bipolar, Advanced Schottky TTL, Binary Counters, Monolithic Silicon
DLA SMD-5962-87544 REV D-2013 MICROCIRCUIT, DIGITAL, BIPOLAR SYNCHRONOUS FOUR-BIT BINARY UP-DOWN COUNTER, MONOLITHIC SILICON
DLA MIL-M-38510/343 B VALID NOTICE 2-2013 Microcircuits, Digital, Bipolar, Advanced Schottky TTL, Binary Counters, Monolithic Silicon
DLA SMD-5962-95574 REV A-2006 MICROCIRCUIT, DIGITAL, BIPOLAR, TTL QUADRUPLE 2-INPUT POSITIVE-OR GATE, MONOLITHIC SILICON
DLA SMD-5962-97558 REV A-2006 MICROCIRCUIT, DIGITAL, BIPOLAR, ADVANCED SCHOTTKY, TTL, 8-INPUT POSITIVE-NAND GATES, MONOLITHIC SILICON
DLA SMD-5962-88627 REV C-2009 MICROCIRCUIT, DIGITAL, BIPOLAR, ADVANCED SCHOTTKY TTL, 8-BIT BINARY COUNTER, MONOLITHIC SILICON
DLA SMD-5962-88627 REV B-1993 MICROCIRCUIT, DIGITAL, BIPOLAR, ADVANCED SCHOTTKY TTL, 8-BIT BINARY COUNTER, MONOLITHIC SILICON
DLA SMD-5962-89545 REV B-2008 MICROCIRCUIT, DIGITAL, BIPOLAR, ADVANCED SCHOTTKY, 8-BIT BIDIRECTIONAL BINARY COUNTER, MONOLITHIC SILICON
DLA SMD-5962-97560 REV A-2006 MICROCIRCUIT, DIGITAL, BIPOLAR, ADVANCED SCHOTTKY, TTL, QUAD 2-INPUT POSITIVE-OR GATES, MONOLITHIC SILICON
DLA SMD-5962-97561 REV A-2006 MICROCIRCUIT, DIGITAL, BIPOLAR, ADVANCED SCHOTTKY, TTL, TRIPLE 3-INPUT POSITIVE AND GATES, MONOLITHIC SILICON
DLA SMD-5962-81023 REV L-2006 MICROCIRCUIT, LINEAR, BI-FET OPERATIONAL AMPLIFIERS, MONOLITHIC SILICON
DLA SMD-5962-88589 REV D-2008 MICROCIRCUIT, DIGITAL, BIPOLAR, ADVANCED LOW POWER SCHOTTKY TTL, POSITIVE NAND GATE, MONOLITHIC SILICON
DLA SMD-5962-90889 REV C-2008 MICROCIRCUIT, DIGITAL, BIPOLAR CMOS, QUADRUPLE BUS BUFFER GATE, TTL COMPATIBLE, MONOLITHIC SILICON
DLA SMD-5962-96658 REV C-2003 MICROCIRCUIT, DIGITAL, BIPOLAR, LOW-POWER SCHOTTKY TTL, HEX SCHMITT-TRIGGER INVERTERS, MONOLITHIC SILICON
DLA MIL-PRF-19500/500 E (1)-2013 SEMICONDUCTOR DEVICE, DIODE, SILICON, UNIPOLAR TRANSIENT VOLTAGE SUPPRESSOR, TYPES 1N5555 THROUGH 1N5558, 1N5907, 1N5629A THROUGH 1N5665A, JAN, JANTX, AND JANTXV
DLA MIL-DTL-28803/1 E-2013 DISPLAY, OPTOELECTRONIC, SEGMENTED READOUT, BACKLIGHTED, STYLE II (LIGHT EMITTING DIODE), RFI SHIELDED, MOISTURE SEALED, HIGH IMPACT SHOCK, TYPE R01
DLA SMD-5962-89944 REV B-2006 MICROCIRCUIT, DIGITAL, BIPOLAR, LOW POWER SCHOTTKY, TTL, BCD-TO-SEVEN SEGMENT DECODER/DRIVERS, MONOLITHIC SILICON
DLA SMD-5962-90633 REV A-2006 MICROCIRCUIT, LINEAR, QUAD BIFET, OPERATIONAL AMPLIFIER, MONOLITHIC SILICON
DLA MIL-M-38510/327 B VALID NOTICE 1-2008 Microcircuits, Digital, Bipolar, Low-Power Schottky TTL, Counters, Monolithic Silicon
DLA MS21351 REV G-2011 SWITCH, TOGGLE, POSITIVE BREAK, SPECIAL CIRCUIT, MINIATURE TOGGLE SEALED, SOLDER LUG, SINGLE POLE, .469 MOUNTING BUSHING
DLA SMD-5962-96751 REV A-2003 MICROCIRCUIT, DIGITAL, BIPOLAR, LOW-POWER SCHOTTKY TTL, DUAL J-K FLIP-FLOPS WITH CLEAR, MONOLITHIC SILICON
DLA SMD-5962-97562 REV A-2006 MICROCIRCUIT, DIGITAL, BIPOLAR, ADVANCED SCHOTTKY, TTL, OCTAL D-TYPE EDGE-TRIGGERED FLIP-FLOPS WITH 3-STATE OUTPUTS, MONOLITHIC SILICON
DLA MIL-M-38510/342 A VALID NOTICE 1-2009 Microcircuits, Digital, Bipolar, Advanced Schottky TTL, 4-Bit Binary Full Adders with Fast Carry, Monolithic Silicon
DLA MIL-M-38510/342 A VALID NOTICE 2-2013 Microcircuits, Digital, Bipolar, Advanced Schottky TTL, 4-Bit Binary Full Adders with Fast Carry, Monolithic Silicon
DLA SMD-5962-97559 REV A-2006 MICROCIRCUIT, DIGITAL, BIPOLAR, ADVANCED SCHOTTKY, TTL, OCTAL BUFFERS AND LINE DRIVERS WITH THREE STATE OUTPUTS, MONOLITHIC SILICON
DLA SMD-5962-83025 REV H-2005 MICROCIRCUIT, DIGITAL, BIPOLAR, ADVANCED LOW-POWER SCHOTTKY TTL, 4-BIT UP/DOWN BINARY COUNTER, MONOLITHIC SILICON
DLA SMD-5962-87621 REV B-2011 MICROCIRCUITS, DIGITAL, BIPOLAR, LOW POWER SCHOTTKY TTL, 8-BIT BINARY COUNTER WITH INPUT REGISTERS, MONOLITHIC SILICON
DLA SMD-5962-95537 REV A-2001 MICROCIRCUIT, DIGITAL, BIPOLAR, ADVANCED SCHOTTKY TTL, QUADRUPLE D-TYPE FLIP-FLOPS WITH CLEAR, MONOLITHIC SILICON
DLA SMD-5962-97580 REV A-2006 MICROCIRCUIT, DIGITAL, BIPOLAR ADVANCED SCHOTTKY TTL, DUAL J-K POSITIVE EDGE TRIGGERED FLIP-FLOPS WITH CLEAR AND PRESET, MONOLITHIC SILICON
DLA SMD-5962-88621 REV C-2008 MICROCIRCUIT, DIGITAL, BIPOLAR, ADVANCED SCHOTTKY TTL, QUADRUPLE, 2-INPUT EXCLUSIVE-OR-GATE, MONOLITHIC SILICON
DLA SMD-5962-91627 REV A-2004 MICROCIRCUIT, DIGITAL, BIPOLAR, ADVANCED SCHOTTKY, TTL, QUADRUPLE 2-INPUT NAND DRIVER, MONOLITHIC SILICON
DLA SMD-5962-97549-1997 MICROCIRCUIT, DIGITAL, BIPOLAR, ADVANCED SCHOTTKY, TTL, OCTAL D-TYPE EDGE-TRIGGERED FLIP-FLOPS W/3- STATE OUTPUTS, MONOLITHIC SILICON
DLA MIL-M-38510/321 C VALID NOTICE 1-2008 MICROCIRCUITS, DIGITAL, LOW-POWER SCHOTTKY TTL, BUFFERS/DRIVERS, OPEN COLLECTOR OUTPUT, HIGH VOLTAGE, MONOLITHIC SILICON

ES-UNE, monolithic photodiode

UNE-EN 120005:1992 BDS: PHOTODIODES, PHOTODIODE ARRAYS (NOT INTENDED FOR FIBRE OPTIC APPLICATIONS). (Endorsed by AENOR in September of 1996.)
UNE-EN 120001:1992 BDS: LIGHT EMITTING DIODES, LIGHT EMITTING DIODE ARRAYS, LIGHT EMITTING DIODE DISPLAYS WITHOUT INTERNAL LOGIC AND RESISTOR. (Endorsed by AENOR in September of 1996.)
UNE-EN 120006:1992 BDS: PIN-PHOTODIODES FOR FIBRE OPTIC APPLICATIONS. (Endorsed by AENOR in September of 1996.)

国家市场监督管理总局、中国国家标准化管理委员会, monolithic photodiode

GB/T 36613-2018 Probe test method for light emitting diode chips
GB/T 36358-2018 Semiconductor optoelectronic devices—Blank detail specification for power light-emitting diodes

German Institute for Standardization, monolithic photodiode

DIN EN 120005:1996 Blank detail specification - Photodiodes, photodiode-arrays (not intended for fibre optic applications); German version EN 120005:1992
DIN EN 120005:1996-11 Blank detail specification - Photodiodes, photodiode-arrays (not intended for fibre optic applications); German version EN 120005:1992
DIN EN 120001:1993-06 Blank detail specification: light emitting diodes, light emitting diode arrays, light emitting diode displays without internal logic and resistor; German version EN 120001:1992
DIN EN 120001:1993 Blank detail specification: light emitting diodes, light emitting diode arrays, light emitting diode displays without internal logic and resistor; German version EN 120001:1992
DIN IEC 62088:2002-09 Nuclear instrumentation - Photodiodes for scintillation detectors - Test procedures (IEC 62088:2001)
DIN EN 62341-6-1:2011-07 Organic light emitting diode (OLED) displays - Part 6-1: Measuring methods of optical and electro-optical parameters (IEC 62341-6-1:2009); German version EN 62341-6-1:2011
DIN EN 62384:2007 DC or AC supplied electronic control gear for LED modules - Performance requirements (IEC 62384:2006); German version EN 62384:2006
DIN IEC 62088:2002 Nuclear instrumentation - Photodiodes for scintillation detectors - Test procedures (IEC 62088:2001)
DIN EN 62384:2010 DC or AC supplied electronic control gear for LED modules - Performance requirements (IEC 62384:2006 + A1:2009); German version EN 62384:2006 + A1:2009
DIN EN 61347-2-13:2007 Lamp controlgear - Part 2-13: Particular requirements for d.c. or a.c. supplied electronic controlgear for LED modules (IEC 61347-2-13:2006); German version EN 61347-2-13:2006

European Standard for Electrical and Electronic Components, monolithic photodiode

EN 120005:1992 Blank detail specification: photodiodes, photodiode-arrays (not intended for fibre optic applications)
EN 120001:1992 Blank detail specification; light emitting diodes, light emitting diode arrays, light emitting diode displays without internal logic and resistor
EN 120006:1992 Blank detail specification: PIN-photodiodes for fibre optic applications

Guangdong Provincial Standard of the People's Republic of China, monolithic photodiode

DB44/T 1630-2015 3528/5050 Encapsulated Chip LED

Association Francaise de Normalisation, monolithic photodiode

NF EN 120005:1992 Spécification particulière cadre : photodiodes, réseaux de photodiodes (Non destinées aux applications pour les fibres optiques}
NF C93-120-005*NF EN 120005:1992 Blank detail specification : photodiodes, photodiode arrays (not intended for fibre optic applications)
NF EN 120001:1992 Spécification particulière cadre : diodes électroluminescentes, réseaux de diodes électroluminescentes, afficheurs à diodes électroluminescentes sans résistance ni circuits logiques internes
NF C93-120-001*NF EN 120001:1992 Blank detail specification : light emitting diodes, light emitting diode arrays, light emitting diode displays without internal logic and resistor
NF C96-551/A2:1981 Optoelectronic Light emitting diodes Optocouplers Relevant Article Sheets
NF C96-551/A3:1981 Optoelectronic Light emitting diodes Optocouplers Relevant Article Sheets
NF C86-502:1983 Harmonized system of quality assessment for electronic components. Blank detail specification. Infrared emitting diodes, infrared emitting diodes arrays.
NF C93-872:1987 Digital receivers with pin photodiode.
NF C86-501:1983 Harmonized system of quality assessment for electronic components. Blank detail specification. Light emitting diodes, light emitting diode arrays.
NF C86-505:1986 Semiconductor devices. Harmonized system of quality assessment for electronic components. Photodiodes. Photodiodes-arrays. Blank detail specification CECC 20 005.
NF EN 62341-6-1:2011 Afficheurs à diodes électroluminescentes organiques (OLED) - Partie 6-1 : méthodes de mesure des paramètres optiques et électro-optiques
NF C96-565-2*NF EN 62595-2:2013 LCD backlight unit - Part 2 : electro-optical measurement methods of LED backlight unit
NF C71-305*NF EN 62384:2006 D.C. or A.C. supplied electronic control gear for LED modules - Performance requirements.
NF C96-541-6-1*NF EN 62341-6-1:2011 Organic light emitting diode (OLED) displays - Part 6-1 : measuring methods of optical and electro-optical parameters.
NF EN IEC 63286:2022 Panneaux à diodes électroluminescentes organiques (OLED) flexibles destinés à l'éclairage général - Exigences de performance
NF C71-251*NF EN 62560:2013 Self-ballasted LED-lamps for general lighting services by voltage > 50 V - Safety specifications
NF C71-247-13:2006 Lamp controlgear - Part 2-13 : particular requirements for d.c. for a.c. supplied electronic controlgear for LED modules.
NF C71-247-13*NF EN 61347-2-13:2014 Lamp controlgear - Part 2-13 : particular requirements for d.c. or a.c. supplied electronic controlgear for LED modules

(U.S.) Joint Electron Device Engineering Council Soild State Technology Association, monolithic photodiode

JEDEC JESD51-50-2012 Overview of Methodologies for the Thermal Measurement of Single- and Multi-Chip, Single- and Multi-PN-Junction Light-Emitting Diodes (LEDs)

SE-SIS, monolithic photodiode

SIS SS CECC 20005-1988 Blank detail specification: Photodiodes, photodiode-arrays (not intended for fibre optic aoolications)
SIS SS-CECC 20001-1991 Blank detail specification: Light emitting diodes, light emitting diode arrays, light emitting diode displays without internal logic and resistor
SIS SS CECC 20006-1988 Blank detail specification: PIN-photodiodes for fibre optic applications

Lithuanian Standards Office , monolithic photodiode

LST EN 120005-2001 Blank detail specification. Photodiodes, photodiode-arrays (not intended for fibre optic applications)
LST EN 120001-2001 Blank detail specification. Light emitting diodes, light emitting diode arrays, light emitting diode displays without internal logic and resistor
LST EN 62341-6-1-2011 Organic light emitting diode (OLED) displays -- Part 6-1: Measuring methods of optical and electro-optical parameters (IEC 62341-6-1:2009)

British Standards Institution (BSI), monolithic photodiode

BS IEC 60747-5-8:2019 Semiconductor devices. Optoelectronic devices. Light emitting diodes. Test method of optoelectronic efficiencies of light emitting diodes
BS IEC 60747-5-16:2023 Semiconductor devices - Optoelectronic devices. Light emitting diodes. Test method of the flat-band voltage of GaN-based light emitting diodes based on the photocurrent spectroscopy
BS IEC 60747-5-11:2019 Semiconductor devices. Optoelectronic devices. Light emitting diodes. Test method of radiative and nonradiative currents of light emitting diodes
BS EN 120005:1986 Specification for harmonized system of quality assessment for electronic components - Blank detail specification - Photodiodes, photodiode-arrays (not intended for fibre optic applications)
BS EN 120001:1993 Harmonized system of quality assessment for electronic components. Blank detail specification. Light emitting diodes, light emitting diode arrays, light emitting diode displays without internal logic and resistor
BS EN 120001:1991 Harmonized system of quality assessment for electronic components - Blank detail specification - Light emitting diodes, light emitting diode arrays, light emitting diode displays without internal logic and resistor
18/30367363 DC BS IEC 60747-5-8. Semiconductor devices. Part 5-8. Optoelectronic devices. Light emitting diodes. Test method of optoelectronic efficiencies of light emitting diodes
BS EN 120005:1993 Specification for harmonized system of quality assessment for electronic components. Blank detail specification. Photodiodes, photodiode-arrays (not intended for fibre optic applications)
BS PD IEC/TS 62916:2017 Photovoltaic modules. Bypass diode electrostatic discharge susceptibility testing
18/30388245 DC BS EN IEC 60747-5-11. Semiconductor devices. Part 5-11. Optoelectronic devices. Light emitting diodes. Test method of radiative and nonradiative currents of light emitting diodes
BS EN ISO 19009:2015 Small craft. Electric navigation lights. Performance of LED lights
PD IEC/TS 62916:2017 Photovoltaic modules. Bypass diode electrostatic discharge susceptibility testing
BS EN 120002:1993 Specification for harmonized system of quality assessment for electronic components. Blank detail specification: infrared emitting diodes, infrared emitting diode arrays
BS EN 62341-6-1:2011 Organic light emitting diode (OLED) displays. Measuring methods of optical and electro-optical parameters
PD IEC TR 60747-5-12:2021 Semiconductor devices. Optoelectronic devices. Light emitting diodes. Test method of LED efficiencies
BS IEC 60747-5-15:2022 Semiconductor devices - Optoelectronic devices. Light emitting diodes. Test method of the flat-band voltage based on the electroreflectance spectroscopy
19/30392174 DC BS EN 60747-5-6. Semiconductor devices. Part 5-6. Optoelectronic devices. Light emitting diodes
BS EN 62384:2006 D.C. or A.C. supplied electronic control gear for LED modules - Performance requirements
BS IEC 60747-5-9:2019 Semiconductor devices. Optoelectronic devices. Light emitting diodes. Test method of the internal quantum efficiency based on the temperature-dependent electroluminescence
PD IEC TS 63109:2022 Photovoltaic (PV) modules and cells. Measurement of diode ideality factor by quantitative analysis of electroluminescence images
BS EN 61347-2-13:2006 Lamp controlgear - Particular requirements for d.c. or a.c. supplied electronic controlgear for LED modules
BS EN 61347-2-13:2014 Lamp controlgear. Particular requirements for d.c. or a.c. supplied electronic controlgear for LED modules
BS EN 62384:2006+A1:2009 DC or AC supplied electronic control gear for LED modules - Performance requirements
14/30313209 DC BS EN 62341-6-1. Organic light emitting diode (OLED) displays. Part 6-1. Measuring methods of optical and electro-optical parameters
23/30475452 DC BS EN IEC 62341-6-1. Organic light emitting diode (OLED) displays - Part 6-1. Measuring methods of optical and electro-optical parameters
20/30430108 DC BS EN IEC 62341-6-1. Organic light emitting diode (OLED) displays. Part 6-1. Measuring methods of optical and electro-optical parameters
21/30440970 DC BS EN IEC 60747-5-16. Semiconductor devices - Part 5-16. Optoelectronic devices. Light emitting diodes. Test method of the flat-band voltage based on the photocurrent spectroscopy
20/30422995 DC BS EN IEC 60747-5-15. Semiconductor devices. Part 5-15. Optoelectronic devices. Light emitting diodes. Test method of the flat-band voltage based on the electroreflectance spectroscopy
BS IEC 60747-5-10:2019 Semiconductor devices. Optoelectronic devices. Light emitting diodes. Test method of the internal quantum efficiency based on the room-temperature reference point
BS EN 62560:2012 Self-ballasted LED-lamps for general lighting services by voltage 50 V. Safety specifications
BS EN 62341-6-2:2012 Organic light emitting diode (OLED) displays. Measuring methods of visual quality and ambient performance
BS EN IEC 62149-12:2023 Fibre optic active components and devices. Performance standards - Distributed feedback laser diode device for analogue radio over fibre systems
18/30367367 DC BS IEC 60747-5-62. Semiconductor devices. Part 5-9. Optoelectronic devices. Light emitting diodes. Test method of the internal quantum efficiency based on the temperature-dependent electroluminescence

Korean Agency for Technology and Standards (KATS), monolithic photodiode

KS C 6990-2001 General rules of photodiodes for fiber optic transmission
KS C 6905-2001 General rules of laser diodes for fiber optic transmission
KS C 6991-2001 Test methods of photodiodes for fiber optic transmission
KS C 6906-2001 Test methods of laser diodes for fiber optic transmission
KS C 6990-2013 GENERAL RULES OF PHOTODIODES FOR FIBER OPTIC TRANSMISSION
KS C 6991-2013 TEST METHODS OF PHOTODIODES FOR FIBER OPTIC TRANSMISSION
KS C 6990-2001(2011) GENERAL RULES OF PHOTODIODES FOR FIBER OPTIC TRANSMISSION
KS C 6991-2001(2011) TEST METHODS OF PHOTODIODES FOR FIBER OPTIC TRANSMISSION
KS P ISO 10650-2-2009(2014) Dentistry－Powered polymerization activators－Part 2：Light-emitting diode(LED) lamps
KS C IEC 62341-6-1:2020 Organic light emitting diode(OLED) displays — Part 6-1: Measuring methods of optical and electro-optical parameters
KS C IEC 62384:2011 DC or AC supplied electronic control gear for LED modules-Performance requirements
KS C IEC 62341-6:2007 Organic light emitting diode(OLED) displays－Part 6：Measurement methods
KS C IEC 61347-2-13:2011 Lamp controlgear－Part 2-13：Particular requirements for d.c. or a.c. supplied electronic controlgear for LED modules

Japanese Industrial Standards Committee (JISC), monolithic photodiode

JIS C 5990:1997 General rules of photodiodes for fiber optic transmission
JIS C 5991:1997 Measuring methods of photodiodes for fiber optic transmission
JIS C 8156:2011 Self-ballasted LED-lamps for general lighting services by voltage > 50 V -- Safety specifications
JIS C 8156:2017 Self-ballasted LED-lamps for general lighting services by voltage > 50 V -- Safety specifications

Professional Standard - Machinery, monolithic photodiode

JB/T 5186-1991 Silicon photodiodes for cameras

CZ-CSN, monolithic photodiode

CSN 35 8761-1973 Semiconductor devices. Phototransistors photodíodes. Measurement of photoelectric current
CSN 35 8762-1973 Semiconductor devices. Phototransistors photodiodes. Measurement of dark current

General Administration of Quality Supervision, Inspection and Quarantine of the People‘s Republic of China, monolithic photodiode

GB/T 36356-2018 Technical specification for power light-emitting diode chips
GB/T 36357-2018 Technical specification for middle power light-emitting diode chips
GB/T 23729-2009 Photodiodes for scintillation detectors.Test procedures
GB/T 15651.6-2023 Semiconductor Devices Part 5-6: Optoelectronic Devices Light Emitting Diodes
GB/T 42243-2022 General technical specification for organic light emitting diode(OLED) television
GB/T 36359-2018 Semiconductor optoelectronic devices.Blank detail specification for lower power light-emitting diodes
GB/T 36360-2018 Semiconductor optoelectronic devices.Blank detail specification for middle power light-emitting diodes
GB/T 20871.61-2013 Organic light emitting diode (OLED) displays.Part 6-1:Measuring methods of optical and electro-optical parameters
GB/T 18904.3-2002 Semiconductor devices--Part 12-3: Optoelectronic devices--Blank detail specification for light-emitting diodes--Display application

International Electrotechnical Commission (IEC), monolithic photodiode

IEC 60747-5-8:2019 Semiconductor devices - Part 5-8: Optoelectronic devices - Light emitting diodes - Test method of optoelectronic efficiencies of light emitting diodes
IEC 91/926/PAS:2010 Electronic circuit board for high-brightness LEDs
IEC 60747-5-7:2016 Semiconductor devices - Part 5-7: Optoelectronic devices - Photodiodes and phototransistors
IEC 60747-5-16:2023 Semiconductor devices - Part 5-16: Optoelectronic devices - Light emitting diodes - Test method of the flat-band voltage of GaN-based light emitting diodes based on the photocurrent spectroscopy
IEC 60747-5-11:2019 Semiconductor devices - Part 5-11: Optoelectronic devices - Light emitting diodes - Test method of radiative and nonradiative currents of light emitting diodes
IEC TS 62916:2017 Photovoltaic modules - Bypass diode electrostatic discharge susceptibility testing
IEC 60747-5-6:2016 Semiconductor devices - Part 5-6: Optoelectronic devices - Light emitting diodes
IEC 60747-5-6:2021 Semiconductor devices - Part 5-6: Optoelectronic devices - Light emitting diodes
IEC 91/928/PAS:2010 Test methods for electronic circuit board for high-brightness LEDs
IEC 60747-5-6:2021 RLV Semiconductor devices - Part 5-6: Optoelectronic devices - Light emitting diodes
IEC 62341-6-3:2017/COR1:2019 Organic light emitting diode (OLED) displays - Part 6-1: Measuring methods of optical and electro-optical parameters
IEC 62341-6-1:2022 RLV Organic light emitting diode (OLED) displays - Part 6-1: Measuring methods of optical and electro-optical parameters
IEC 62341-6-1:2017 RLV Organic light emitting diode (OLED) displays - Part 6-1: Measuring methods of optical and electro-optical parameters
IEC 62341-6-1:2022 Organic light emitting diode (OLED) displays - Part 6-1: Measuring methods of optical and electro-optical parameters
IEC 62595-2:2012 LCD backlight unit - Part 2: Electro-optical measurement methods of LED backlight unit
IEC 62384:2006 D.C. or A.C. supplied electronic control gear for LED modules - Performance requirements
IEC TS 63109:2022 Photovoltaic (PV) modules and cells - Measurement of diode ideality factor by quantitative analysis of electroluminescence images
IEC 62384:2011 DC or AC supplied electronic control gear for LED modules - Performance requirements
IEC TR 60747-5-12:2021 Semiconductor devices - Part 5-12: Optoelectronic devices - Light emitting diodes - Test method of LED efficiencies
IEC 62341-6-1:2017 Organic light emitting diode (OLED) displays - Part 6-1: Measuring methods of optical and electro-optical parameters
IEC 62341-6-1:2009 Organic light emitting diode (OLED) displays - Part 6-1: Measuring methods of optical and electro-optical parameters
IEC 60747-5-15:2022 Semiconductor devices - Part 5-15: Optoelectronic devices - Light emitting diodes - Test method of the flat-band voltage based on the electroreflectance spectroscopy
IEC 60747-12-3:1998 Semiconductor devices - Part 12-3: Optoelectronic devices - Blank detail specification for light-emitting diodes - Display application
IEC 62560:2011 Self-ballasted LED-lamps for general lighting services by voltage > 50 V - Safety specifications
IEC 62560:2015 Self-ballasted LED-lamps for general lighting services by voltage > 50 V - Safety specifications
IEC 61347-2-13:2014 Lamp controlgear - Part 2-13: Particular requirements for d.c. or a.c. supplied electronic controlgear for LED modules
IEC 61347-2-13:2006 Lamp controlgear - Part 2-13: Particular requirements for d.c. or a.c. supplied electronic controlgears for LED modules
IEC 60747-5-9:2019 Semiconductor devices - Part 5-9: Optoelectronic devices - Light emitting diodes - Test method of the internal quantum efficiency based on the temperature-dependent electroluminescence
IEC 60747-5-14:2022 Semiconductor devices - Part 5-14: Optoelectronic devices - Light emitting diodes - Test method of the surface temperature based on the thermoreflectance method
IEC 62149-12:2023 Fibre optic active components and devices - Performance standards - Part 12: Distributed feedback laser diode device for analogue radio over fibre systems

Professional Standard - Post and Telecommunication, monolithic photodiode

YD/T 835-1996 Test method of avalanche photodiodes

邮电部, monolithic photodiode

YD/T 0835-1996 Avalanche photodiode detection method

PT-IPQ, monolithic photodiode

NP 3234-2-1987

NEMA - National Electrical Manufacturers Association, monolithic photodiode

NEMA C78.51-2016 Electric Lamps - LED (Light Emitting Diode) Lamps - Method of Designation
NEMA C78.52-2017 Electric Lamps - LED (Light Emitting Diode) Direct Replacement Lamps - Method of Designation

RO-ASRO, monolithic photodiode

STAS 12258/2-1984 Optoelectronic semiconductor devices PIIOTODIODES Terminology and essentia] characteristics
STAS 12258/4-1986 Optoelectronic semiconductor devices LIGHT EMITTING DIODES Terminology and main characteristics
STAS 12258/6-1987 OPTOELECTRONIC SEMICON- DUCTOR DEVICES INFRARED EMM1TING DIODES Terminology and essential characteristics

CENELEC - European Committee for Electrotechnical Standardization, monolithic photodiode

EN 150015:1992 Blank Detail Specification: Unidirectional Transient Overvoltage Suppressor Diodes

IEC - International Electrotechnical Commission, monolithic photodiode

TS 62916-2017 Photovoltaic modules – Bypass diode electrostatic discharge susceptibility testing (Edition 1.0)

中华人民共和国国家质量监督检验检疫总局、中国国家标准化管理委员会, monolithic photodiode

GB/T 33762-2017 Method of measurement for display performance of organic light-emitting diode(OLED) television

RU-GOST R, monolithic photodiode

GOST 21107.10-1978 Gas discharge devices. Methods of measurement of electrical parameters of operating and measuring conditions for glow-discharge thyratrons and gas-filled rectifiers
GOST R IEC 62384-2011 Electronic control gear supplied from the sources of direet or alternative current for light emitted diode modules. Performance requirements
GOST R IEC 62560-2011 Self-ballasted LED-lamps for general lighting services by voltage 50 V. Safety specifications

未注明发布机构, monolithic photodiode

BS EN 120008:1995(2000) Specification for Harmonized system of quality assessment for electronic components — Blank detail specification — Light emitting diodes and infrared emitting diodes for fibre optic system or sub - system
BS EN 120006:1993(1999) Specification for Harmonized system of quality assessment for electronic components — Blank detail specification — Pin - photodiodes for fibre optic applications
BS EN 150015:1993(2000) Specification for Harmonized system of quality assessment for electronic components — Blank detail specification — Unidirectional transient overvoltage suppressor diodes

GB-REG, monolithic photodiode

REG NASA-LLIS-1840--2006 Lessons Learned - CALIPSO Avalanche Photodiode (APD) Detector Assembly Electrical Failure

KR-KS, monolithic photodiode

KS C IEC 62341-6-1-2020 Organic light emitting diode(OLED) displays — Part 6-1: Measuring methods of optical and electro-optical parameters

National Electrical Manufacturers Association（NEMA), monolithic photodiode

NEMA C78.374-2015 Electric Lamps - Light-Emitting Diode Package Specification Sheet for General Illumination Applications

Danish Standards Foundation, monolithic photodiode

DS/EN 62341-6-1:2011 Organic light emitting diode (OLED) displays - Part 6-1: Measuring methods of optical and electro-optical parameters

European Committee for Electrotechnical Standardization（CENELEC）, monolithic photodiode

EN 62341-6-1:2011 Organic light emitting diode (OLED) displays - Part 6-1: Measuring methods of optical and electro-optical parameters

GOSTR, monolithic photodiode

GOST IEC 62341-6-1-2016 Organic light emitting diode (OLED) displays. Part 6-1. Measuring methods of optical and electro-optical parameters

Military Standard of the People's Republic of China-General Armament Department, monolithic photodiode

GJB 33/15-2011 Semiconductor optoelectronic device.Detail specification for type BT401 semiconductor infrared-emitting diode

American Society for Testing and Materials (ASTM), monolithic photodiode

ASTM F3095-17 Standard Practice for Laser Technologies for Direct Measurement of Cross Sectional Shape of Pipeline and Conduit by Rotating Laser Diodes and CCTV Camera System