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Photodiode

Photodiode, Total:65 items.

In the international standard classification, Photodiode involves: Optoelectronics. Laser equipment, Semiconductor devices, Fibre optic communications, Printed circuits and boards, Nuclear energy engineering.


Professional Standard - Military and Civilian Products, Photodiode

  • WJ 2100-2004 Test method for silicon photodiodes and silicon avalanche photodiodes
  • WJ 2265-1995 Specifications for Preamplified Silicon Avalanche Photodiodes
  • WJ 2506-1998 Verification Regulations for Photodiode Dynamic Tester

ES-UNE, Photodiode

  • UNE-EN 120005:1992 BDS: PHOTODIODES, PHOTODIODE ARRAYS (NOT INTENDED FOR FIBRE OPTIC APPLICATIONS). (Endorsed by AENOR in September of 1996.)
  • UNE-EN 120006:1992 BDS: PIN-PHOTODIODES FOR FIBRE OPTIC APPLICATIONS. (Endorsed by AENOR in September of 1996.)

German Institute for Standardization, Photodiode

  • DIN EN 120005:1996 Blank detail specification - Photodiodes, photodiode-arrays (not intended for fibre optic applications); German version EN 120005:1992
  • DIN EN 120005:1996-11 Blank detail specification - Photodiodes, photodiode-arrays (not intended for fibre optic applications); German version EN 120005:1992
  • DIN IEC 62088:2002-09 Nuclear instrumentation - Photodiodes for scintillation detectors - Test procedures (IEC 62088:2001)
  • DIN IEC 62088:2002 Nuclear instrumentation - Photodiodes for scintillation detectors - Test procedures (IEC 62088:2001)

European Standard for Electrical and Electronic Components, Photodiode

  • EN 120005:1992 Blank detail specification: photodiodes, photodiode-arrays (not intended for fibre optic applications)
  • EN 120006:1992 Blank detail specification: PIN-photodiodes for fibre optic applications

Association Francaise de Normalisation, Photodiode

  • NF EN 120005:1992 Spécification particulière cadre : photodiodes, réseaux de photodiodes (Non destinées aux applications pour les fibres optiques}
  • NF C93-120-005*NF EN 120005:1992 Blank detail specification : photodiodes, photodiode arrays (not intended for fibre optic applications)
  • NF C86-505:1986 Semiconductor devices. Harmonized system of quality assessment for electronic components. Photodiodes. Photodiodes-arrays. Blank detail specification CECC 20 005.
  • NF C93-872:1987 Digital receivers with pin photodiode.
  • NF C96-551/A2:1981 Optoelectronic Light emitting diodes Optocouplers Relevant Article Sheets
  • NF C96-551/A3:1981 Optoelectronic Light emitting diodes Optocouplers Relevant Article Sheets

SE-SIS, Photodiode

  • SIS SS CECC 20005-1988 Blank detail specification: Photodiodes, photodiode-arrays (not intended for fibre optic aoolications)
  • SIS SS CECC 20006-1988 Blank detail specification: PIN-photodiodes for fibre optic applications

Lithuanian Standards Office , Photodiode

  • LST EN 120005-2001 Blank detail specification. Photodiodes, photodiode-arrays (not intended for fibre optic applications)

Professional Standard - Electron, Photodiode

  • SJ/T 2216-2015 Technical specification for photodiode of silicon
  • SJ/T 2354-2015 Measuring methods for photodiodes of PIN、APD
  • SJ/T 2354-2015/0352 Measuring methods for photodiodes of PIN、APD
  • SJ 2354.1-1983 General procedures of measurement for electrical and optical parameters of PIN and avalanche photodiodes
  • SJ/T 2214-2015 Measuring methods for semiconductor photodiode and phototransistor
  • SJ 50033/102-1995 Detail specification for InGaAs/InP PIN photodiode for type GD 218
  • SJ 2354.5-1983 Method of measurement for capacitance of PIN and avalanche photodiodes
  • SJ 2354.3-1983 Method of measurement for dark current of PIN and avalanche photodiodes
  • SJ 50033/112-1996 Scmiconductor optoelectronic devices.Detail specification for type GD3251Y photodiodes
  • SJ 50033/113-1996 Semiconductor optoelectronic devices.Detail specification for type GD3252Y photodiodes
  • SJ 2354.6-1983 Method of measurement for responsivity of PIN and avalanche photodiodes
  • SJ 2354.13-1983 Method of measurement for multiplication factor of PIN and avalanche photodiodes
  • SJ 2354.10-1983 Method of measurement for cross-light factor of PIN and avalanche photodiodes matrix
  • SJ 20644.1-2001 Semiconductor optoelectronic devices Detail specification for type GD3550Y PIN photodiode
  • SJ 20644.2-2001 Semiconductor optoelectronic devices Detail specification for type GD101 PIN photodiode
  • SJ 2354.4-1983 Method of measurement for forward voltage drop of PIN and avalanche photodiodes
  • SJ 2354.14-1983 Method of measurement for excess noise factor of PIN and avalanche photodiodes
  • SJ 2354.2-1983 Method of measurement for reverse break-down voltage of PIN and avalanche photodiodes
  • SJ 2354.11-1983 Method of measurement for width of blind zone of PIN and avalanche photodiode matrix
  • SJ 2354.9-1983 Method of measurement for noise equivalent power of PIN and avalanche photodiodes
  • SJ 2354.7-1983 Method of measurement for spectral response curve and spectral response range of PIN and avalanche photodiodes
  • SJ 2354.8-1983 Method of measurement for pulse rise time and fall time of PIN and avalanche photodiodes
  • SJ 2354.12-1983 Method of measurement for temperature factor of reverse breakdown voltage of PIN and avalanche photodiodes

Professional Standard - Machinery, Photodiode

Korean Agency for Technology and Standards (KATS), Photodiode

British Standards Institution (BSI), Photodiode

  • BS EN 120005:1986 Specification for harmonized system of quality assessment for electronic components - Blank detail specification - Photodiodes, photodiode-arrays (not intended for fibre optic applications)
  • BS EN 120005:1993 Specification for harmonized system of quality assessment for electronic components. Blank detail specification. Photodiodes, photodiode-arrays (not intended for fibre optic applications)
  • BS IEC 60747-5-8:2019 Semiconductor devices. Optoelectronic devices. Light emitting diodes. Test method of optoelectronic efficiencies of light emitting diodes

Professional Standard - Post and Telecommunication, Photodiode

邮电部, Photodiode

Japanese Industrial Standards Committee (JISC), Photodiode

  • JIS C 5990:1997 General rules of photodiodes for fiber optic transmission
  • JIS C 5991:1997 Measuring methods of photodiodes for fiber optic transmission

CZ-CSN, Photodiode

  • CSN 35 8761-1973 Semiconductor devices. Phototransistors photodíodes. Measurement of photoelectric current
  • CSN 35 8762-1973 Semiconductor devices. Phototransistors photodiodes. Measurement of dark current

International Electrotechnical Commission (IEC), Photodiode

  • IEC 60747-5-7:2016 Semiconductor devices - Part 5-7: Optoelectronic devices - Photodiodes and phototransistors
  • IEC 60747-5-8:2019 Semiconductor devices - Part 5-8: Optoelectronic devices - Light emitting diodes - Test method of optoelectronic efficiencies of light emitting diodes

General Administration of Quality Supervision, Inspection and Quarantine of the People‘s Republic of China, Photodiode

RO-ASRO, Photodiode

  • STAS 12258/2-1984 Optoelectronic semiconductor devices PIIOTODIODES Terminology and essentia] characteristics

GB-REG, Photodiode

未注明发布机构, Photodiode

  • BS EN 120006:1993(1999) Specification for Harmonized system of quality assessment for electronic components — Blank detail specification — Pin - photodiodes for fibre optic applications




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