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bipolar personality
bipolar personality, Total:178 items.
In the international standard classification, bipolar personality involves: Integrated circuits. Microelectronics, Lamps and related equipment, Aerospace electric equipment and systems, Kitchen equipment, Audio, video and audiovisual engineering, Electricity. Magnetism. Electrical and magnetic measurements, Electrical accessories, Radiocommunications, Semiconductor devices, Capacitors, Fuel cells, Data storage devices, On-board equipment and instruments, Electromagnetic compatibility (EMC), Printed circuits and boards, Characteristics and design of machines, apparatus, equipment, Earthworks. Excavations. Foundation construction. Underground works, Non-textile floor coverings, Energy and heat transfer engineering in general, Physics. Chemistry, Galvanic cells and batteries, Iron and steel products, Bearings, Electronic components in general, Linear and angular measurements, Packaging materials and accessories, Fibre optic communications, Radiation measurements, Cutting tools, Welding, brazing and soldering, Components and accessories for telecommunications equipment.
Defense Logistics Agency, bipolar personality
- DLA SMD-5962-88605 REV B-2001 MICROCIRCUIT, DIGITAL, BIPOLAR HIGH PERFORMANCE 10-BIT BUFFER, MONOLITHIC SILICON
- DLA SMD-5962-88763-1990 MICROCIRCUIT, LINEAR, DUAL-POLARITY TRACKING VOLTAGE REGULATOR, MONOLITHIC SILICON
- DLA SMD-5962-88763 REV A-2010 MICROCIRCUIT, LINEAR, DUAL POLARITY TRACKING VOLTAGE REGULATOR, MONOLITHIC SILICON
- DLA SMD-5962-89930 REV D-2011 MICROCIRCUIT, LINEAR, DUAL POLARITY TRACKING VOLTAGE REGULATOR, MONOLITHIC SILICON
- DLA SMD-5962-89930 REV E-2013 MICROCIRCUIT, LINEAR, DUAL POLARITY TRACKING VOLTAGE REGULATOR, MONOLITHIC SILICON
- DLA MIL-PRF-39016/19 H VALID NOTICE 1-2011 Relays, Electromagnetic, Established Reliability, DPDT, Low Level to 1 Ampere with Internal Diode for Coil Transient Suppression and Polarity Reversal Protection, Terminals 0.100- Inch Grid Pattern
- DLA SMD-5962-89930 REV C-2003 MICROCIRCUIT, LINEAR, DUAL POLARITY TRACKING VOLTAGE REGULATOR, MONOLITHIC SILICON
- DLA MIL-PRF-28776/6 E VALID NOTICE 1-2010 Relays, Hybrid, Established Reliability, DPDT, Low Level to 1.0 Ampere Internal Mosfet drive with Zener Diode Gate Protection (Electromechanical Output) Diode Coil Suppression and Terminals with 0.100 Grid Lead Spacing
- DLA SMD-5962-87657 REV D-2012 MICROCIRCUIT, LINEAR, BIPOLAR, RF/IF AMPLIFIER WITH AGC, MONOLITHIC SILICON
- DLA SMD-5962-89490 REV C-2006 MICROCIRCUIT, HYBRID, LINEAR, DUAL POSITIVE AND NEGATIVE 15-VOLT, 12-VOLT, AND 5-VOLT REGULATOR
- DLA SMD-5962-89554 REV A-2005 MICROCIRCUITS, DIGITAL, BIPOLAR, ADVANCED SCHOTTKY TTL, DUAL 4-INPUT POSITIVE-AND GATE, MONOLITHIC SILICON
- DLA DSCC-DWG-87109 REV C-2002 CONNECTORS, RECEPTACLE, ELECTRICAL, LATCH HOUSINGS, POLARIZED, DOUBLE ROW, .025 POSTS
- DLA SMD-5962-78019 REV E-2006 MICROCIRCUIT, LINEAR, DUAL, HIGH SPEED, VOLTAGE COMPARATOR, MONOLITHIC SILICON
- DLA SMD-5962-88581 REV A-2006 MICROCIRCUIT, LINEAR, BIPOLAR HEX NTDS DRIVER, MONOLITHIC SILICON
- DLA SMD-5962-88582 REV B-2006 MICROCIRCUIT, LINEAR, BIPOLAR HEX NTDS RECEIVER, MONOLITHIC SILICON
- DLA SMD-5962-88605 REV C-2008 MICROCIRCUIT, DIGITAL, BIPOLAR HIGH PERFORMANCE 10-BIT BUFFER, MONOLITHIC SILICON
- DLA SMD-5962-86713 REV B-2009 MICROCIRCUIT, DIGITAL, BIPOLAR, 8-BIT EQUAL-TO COMPARATOR, MONOLITHIC SILICON
- DLA SMD-5962-90541 REV B-2012 MICROCIRCUIT, DIGITAL, BIPOLAR, LOW-POWER SCHOTTKY, TTL, DUAL CARRY-SAVE FULL ADDERS, MONOLITHIC SILICON
- DLA MIL-PRF-39016/20 J VALID NOTICE 1-2010 Relays, Electromagnetic, Established Reliability, DPDT, Low Level to 1.0 Ampere with Internal Diodes for Coil Transient Suppression and Polarity Reversal Protection
- DLA MIL-PRF-39016/43 E VALID NOTICE 1-2010 Relays, Electromagnetic, Established Reliability, DPDT, Low Level to 1.0 Ampere, with Internal Diodes for Coil Transient Suppression, and Polarity Reversal Protection Terminals 0.100- Inch Grid Pattern (Sensitive, 60 Milliwatts, Coil Operate Power at 25
- DLA MIL-M-38510/211 (1)-2012 MICROCIRCUITS, DIGITAL, 32,768 BIT SCHOTTKY, BIPOLAR, PROGRAMMABLE READ-ONLY MEMORY (PROM), MONOLITHIC SILICON
- DLA SMD-5962-90502 REV A-2010 MICROCIRCUIT, DIGITAL, BIPOLAR, ADVANCED SCHOTTKY, TTL, 8-BIT BIDIRECTIONAL UNIVERSAL SHIFT REGISTER, MONOLITHIC SILICON
- DLA MIL-PRF-39016/30 F VALID NOTICE 1-2010 Relays, Electromagnetic, Established Reliability, DPDT, Low Level to 1.0 Ampere (Latching) with Internal Diodes for Coil Transient Suppression and Polarity Reversal Protection
- DLA MIL-PRF-39016/18 H VALID NOTICE 1-2010 Relays, Electromagnetic, Established Reliability, DPDT, Low Level to 1.0 Ampere with Internal Diode for Coil Transient Suppression, Terminals 0.100-Inch Grid Pattern
- DLA SMD-5962-88583 REV B-2006 MICROCIRCUIT LINEAR, BIPOLAR, HEX NTDS, FAST DRIVER, MONOLITHIC SILICON
- DLA MIL-PRF-39016/38 C VALID NOTICE 1-2010 Relays, Electromagnetic, Established Reliability, DPDT, Low Level to 2 Amperes (0.150-Inch Terminal Spacing), with Internal Diodes for Coil Transient Suppression and Reverse Polarity Protection
- DLA SMD-5962-97577 REV A-2006 MICROCIRCUITS, DIGITAL, BIPOLAR, ADVANCED SCHOTTKY TTL, QUADRUPLE 2-INPUT POSITIVE-NAND GATES, MONOLITHIC SILICON
- DLA SMD-5962-97578 REV A-2006 MICROCIRCUIT, DIGITAL, BIPOLAR, ADVANCED SCHOTTKY TTL, QUADRUPLE 2-INPUT POSITIVE-NOR GATES, MONOLITHIC SILICON
- DLA SMD-5962-97579 REV A-2006 MICROCIRCUIT, DIGITAL, BIPOLAR, ADVANCED SCHOTTKY TTL, TRIPLE 3-INPUT POSITIVE NAND GATE, MONOLITHIC SILICON
- DLA SMD-5962-81023 REV L-2006 MICROCIRCUIT, LINEAR, BI-FET OPERATIONAL AMPLIFIERS, MONOLITHIC SILICON
- DLA SMD-5962-95574 REV A-2006 MICROCIRCUIT, DIGITAL, BIPOLAR, TTL QUADRUPLE 2-INPUT POSITIVE-OR GATE, MONOLITHIC SILICON
- DLA SMD-5962-97558 REV A-2006 MICROCIRCUIT, DIGITAL, BIPOLAR, ADVANCED SCHOTTKY, TTL, 8-INPUT POSITIVE-NAND GATES, MONOLITHIC SILICON
- DLA SMD-5962-88555 REV D-2008 MICROCIRCUIT, DIGITAL, BIPOLAR, ADVANCED SCHOTTKY, TTL, D-TYPE REGISTER, MONOLITHIC SILICON
- DLA SMD-5962-88584 REV B-2002 MICROCIRCUIT, LINEAR, BIPOLAR QUAD NTDS FAST/ANEW RECEIVER, MONOLITHIC SILICON
- DLA SMD-5962-97560 REV A-2006 MICROCIRCUIT, DIGITAL, BIPOLAR, ADVANCED SCHOTTKY, TTL, QUAD 2-INPUT POSITIVE-OR GATES, MONOLITHIC SILICON
- DLA SMD-5962-97561 REV A-2006 MICROCIRCUIT, DIGITAL, BIPOLAR, ADVANCED SCHOTTKY, TTL, TRIPLE 3-INPUT POSITIVE AND GATES, MONOLITHIC SILICON
- DLA SMD-5962-89525 REV C-2012 MICROCIRCUIT, DIGITAL, BIPOLAR, ADVANCED SCHOTTKY, TTL, BUS INTERFACE FLIP-FLOP, MONOLITHIC SILICON
- DLA SMD-5962-88589 REV C-2001 MICROCIRCUIT, DIGITAL, BIPOLAR, ADVANCED LOW POWER SCHOTTKY TTL, POSITIVE NAND GATE, MONOLITHIC SILICON
- DLA SMD-5962-88590 REV B-2001 MICROCIRCUIT, DIGITAL, BIPOLAR, ADVANCED LOW POWER SCHOTTKY TTL, POSITIVE NAND GATE, MONOLITHIC SILICON
- DLA SMD-5962-97580 REV A-2006 MICROCIRCUIT, DIGITAL, BIPOLAR ADVANCED SCHOTTKY TTL, DUAL J-K POSITIVE EDGE TRIGGERED FLIP-FLOPS WITH CLEAR AND PRESET, MONOLITHIC SILICON
- DLA SMD-5962-90633 REV A-2006 MICROCIRCUIT, LINEAR, QUAD BIFET, OPERATIONAL AMPLIFIER, MONOLITHIC SILICON
- DLA SMD-5962-89526 REV C-2012 MICROCIRCUIT, DIGITAL, BIPOLAR, ADVANCED SCHOTTKY, TTL, SYNCHRONOUS 8-BIT,UP/DOWN COUNTER, MONOLITHIC SILICON
- DLA MIL-PRF-39016/29 G VALID NOTICE 1-2011 Relays, Electromagnetic, Established Reliability, DPDT, Low Level to 1.0 Ampere (Latching) with Internal Diodes for Coil Transient Suppression
- DLA SMD-5962-97541 REV A-2006 MICROCIRCUIT, DIGITAL, BIPOLAR, LOW-POWER SCHOTTKY TTL, QUADRUPLE 2-INPUT POSITIVE NAND BUFFER, MONOLITHIC SILICON
- DLA MIL-PRF-39016/42 E VALID NOTICE 1-2011 Relays, Electromagnetic, Established Reliability, DPDT, Low Level to 1.0 Ampere with Internal Diode for Coil Transient Suppression, Terminals .100-Inch Grid Pattern (Sensitive 60 Milliwatts, Coil Operate Power at 25 Deg. C)
- DLA MIL-PRF-39016/16 G VALID NOTICE 1-2010 Relays, Electromagnetic, Established Reliability, DPDT, Low Level to 1.0 Ampere (Sensitive, 60 Milliwatts) with Internal Diode for Coil Transient Suppression
- DLA MIL-PRF-39016/37 C VALID NOTICE 1-2010 Relays, Electromagnetic, Established Reliability, DPDT, Low Level to 2 Amperes (0.150-Inch Terminal Spacing), with Internal Diode for Coil Transient Suppression
- DLA MIL-PRF-39016/55 B VALID NOTICE 1-2011 Relay, Electromagnetic, Established Reliability, DPDT, Low Level to 2 Amperes (.200-Inch Terminal Spacing), with Internal Diode for Coil Transient Suppression
- DLA SMD-5962-97549 REV A-2010 MICROCIRCUIT, DIGITAL, BIPOLAR, ADVANCED SCHOTTKY, TTL, OCTAL D-TYPE EDGE-TRIGGERED FLIP-FLOPS W/3-STATE OUTPUTS, MONOLITHIC SILICON
- DLA SMD-5962-90910 REV B-2012 MICROCIRCUIT, DIGITAL, BIPOLAR, ADVANCE SCHOTTKY, TTL, OCTAL EDGE-TRIGGERED D-TYPE FLIP-FLOP WITH CLOCK ENABLE, MONOLITHIC SILICON
- DLA SMD-5962-90695 REV A-2010 MICROCIRCUIT, DIGITAL, BIPOLAR, ADVANCED LOW POWER SCHOTTKY, TTL, 8-BIT BUS INTERFACE FLIP-FLOPS WITH THREE-STATE OUTPUTS, MONOLITHIC SILICON
- DLA SMD-5962-90780 REV C-2012 MICROCIRCUIT, DIGITAL, BIPOLAR, ADVANCED SCHOTTKY, TTL, 10-BIT BUS INTERFACE FLIP-FLOPS WITH NON-INVERTING AND INVERTING INPUTS, MONOLITHIC SILICON
- DLA MIL-PRF-39016/41 E VALID NOTICE 1-2010 Relays, Electromagnetic, Established Reliability, DPDT, Low Level to 1 Ampere, Terminals 0.100-Inch Grid Pattern Sensitive, 60 Milliwatts, Coil Operate Power at 25 Degrees C
Association Francaise de Normalisation, bipolar personality
- UTE C86-614:1977 Composants électroniques - Transistors bipolaires de commutation - Recueil de spécifications particulières.
- NF C72-210/A5*NF EN 60081/A5:2014 Double-capped fluorescent lamps - Performance specifications
- NF EN 60081/A6:2017 Lampes à fluorescence à deux culots - Spécifications de performance
- NF EN 61243-3:2015 Travaux sous tension - Détecteurs de tension - Partie 3 : type bipolaire basse tension
- NF P94-051:1993 Soil : inverstigation and testing. Determination of Atterberg's limits. Liquid limit test using cassagrande apparatus. Plastic limit test on rolled thread.
- NF C72-776*NF EN 62776:2015 Double-capped LED lamps designed to retrofit linear fluorescent lamps - Safety specifications
- NF E22-563:1988 Plain bearings. Metallic thin-walled half bearings. Determination of the sigma 0,01 elastic limit.
PL-PKN, bipolar personality
- PN T01210-01-1992 Semiconductor devices Discrete devices Bipolar transistors Blank detail specification for case-rated bipolar transistors for low-frequency amplification
- PN T01207-01-1992 Semiconductor devices Discrete devices BipoLar transistors Blank detail specification for ambient-rated bipolar transistors for Iow and high-frequency amplification
British Standards Institution (BSI), bipolar personality
- BS EN 62639:2012 Fluorescent induction lamps. Performance specification
- BS EN 60081:1998+A11:2018 Double-capped fluorescent lamps. Performance specifications
- BS EN 2593-001:2014 Aerospace series. Bases for 10 A electromagnetic plug-in relays, two and four poles double thrown. Technical specification
- PD IEC/TR 62152:2009 Transmission properties of cascaded two-ports or quadripols. Background of terms and definitions
- BS EN 60838-2-3:2017 Miscellaneous lampholders. Particular requirements. Lampholders for double-capped linear LED lamps
- BS IEC 60404-8-5:2020 Magnetic materials - Specifications for individual materials. Electrical steel strip and sheet with specified mechanical properties and magnetic polarization
- BS ISO 366-3:2009 Textile machinery and accessories - Reeds - Dimensions and designation of metal reeds with double-spring baulk
- BS PD IEC/TS 62607-4-1:2014 Nanomanufacturing. Key control characteristics. Cathode nanomaterials for lithium ion batteries. Electrochemical characterisation, 2-electrode cell method
- BS IEC 61156-8:2023 Multicore and symmetrical pair/quad cables for digital communications - Symmetrical pair cables with transmission characteristics up to 1 200 MHz. Work area wiring. Sectional specification
GOSTR, bipolar personality
AENOR, bipolar personality
German Institute for Standardization, bipolar personality
- DIN EN 60081:2019-07 Double-capped fluorescent lamps - Performance specifications (IEC 60081:1997 + A1:2000, modified + A2:2003 + A3:2005 + A4:2010 + A5:2013 + A6:2017, modified); German version EN 60081:1998 + A1:2002 + A2:2003 + A3:2005 + A4:2010 + A5:2013 + A6:2017 + A1...
- DIN EN 2593-001:2015-03 Aerospace series - Bases for 10 A electromagnetic plug-in relays, two and four poles double thrown - Part 001: Technical specification; German and English version EN 2593-001:2014
- DIN 4000-18:1988-12 Tabular layouts of article characteristics for semiconductor diodes
- DIN 4000-18:1988 Tabular layouts of article characteristics for semiconductor diodes
- DIN CEN/TS 13130-13:2005 Materials and articles in contact with foodstuffs - Plastics substances subject to limitation - Part 13: Determination of 2,2-bis(4-hydroxyphenyl)propane (Bisphenol A) in food simulants; German version CEN/TS 13130-13:2005
- DIN EN 62776:2015 Double-capped LED lamps designed to retrofit linear fluorescent lamps - Safety specifications (IEC 62776:2014 + COR1:2015); German version EN 62776:2015
ES-UNE, bipolar personality
International Electrotechnical Commission (IEC), bipolar personality
CU-NC, bipolar personality
- NC 66-29-1984 Electronics. Bipolar Transistors Measurement Methods
- NC 66-27-1984 Electronics High-Frequency Bipolar Transistors, Type BF 310 Quality Specifications
- NC 66-28-1984 Electronics. High-Frequency Bipolar Transistors. Type BF 199. Quality Specifications
- NC 66-94-1987 Electronic and Electrotechnical Industry. Low Frequency and High Power Bipolar Transistors Quality Specifications
- NC 66-25-1987 Electronic and Electrotechnical Industry. High Frequency Bipolar Transistors. Quality Specifications
- NC 66-93-1987 Electronic and Electrotecnical Industry. Low Frequency and Medium Power Bipolar Transistors. Quality Specifications
- NC 66-26-1984 Electronics. High-Power, Bipolar Switching Transistor, Type BU 208. Quality Specifications
- NC 66-23-1984 Electronics. High-Power and Low-Frequency Bipolar Transistors, Type 2N 3055. Quality Specifications
- NC 66-17-1987 Electrotechnical and Electronic Industry. High Voltage and Medium Power Bipolar Transistors. Quality Specifications
- NC 66-14-1987 Electronic and Electrotechnical Industry. Plastic-Encapsulated Bipolar Transistors. General Quality Specifications
- NC 66-16-1987 Electronic and Electrotechnical Industry Low Noise and Power Bipolar Transistors. Quality Specifications
- NC 66-18-1984 Electronics. Medium-Power and High-Voltage Bipolar Transistors Types BC 328 and BC 338. Quality Specifications
- NC 66-20-1984 Electronios. High-Power and Low-Frequency Bipolar Tranaistors, Types BD 175, BD 176, BD 177 and BD 178. Quaiity Specifications
- NC 66-22-1984 Electronios. High-Power and Low-Frequency Bipolar Tranaistors, Types BD 705, BD 707, BD 708, BD 709, y BD 710 Quality Specifications
- NC 66-19-1984 Electronics. Medium-Power and High-Voliage Bipolar Transistors, Types BD 135, BD 136, 3D 137, BD 138, BD 139, and BD 140. Quality Specifications
- NC 66-24-1984 Electronics. High-Power and Low-Frequency Bipolar Transistors, Types BD 533, BD 534, BD 535, BD 536, BD 537 BD 538. Quality Specifications
- NC 66-21-1984 Electronios. High-Power and Low-Frequency Bipolar Tranaistors, Types BD 233, BD 234, BD 235, BD 236, BD 237 y BD 238. Quality Specifications
Lithuanian Standards Office , bipolar personality
American Society for Testing and Materials (ASTM), bipolar personality
- ASTM F1605-95 Standard Test Method for Performance of Double-Sided Griddles
- ASTM F1605-14(2019) Standard Test Method for Performance of Double-Sided Griddles
- ASTM A1088-13 Standard Specification for Steel, Sheet, Cold-Rolled, Complex Phase (CP), Dual Phase (DP) and Transformation Induced Plasticity (TRIP)
- ASTM D7932-14 Standard Specification for Printed, Pressure-Sensitive Adhesive Labels for Use in Extreme Distribution Environments
- ASTM D7932-17 Standard Specification for Printed, Pressure-Sensitive Adhesive Labels for Use in Extreme Distribution Environments
- ASTM C1353-09 Standard Test Method for Abrasion Resistance of Dimension Stone Subjected to Foot Traffic Using a Rotary Platform, Double-Head Abraser
- ASTM C1353/C1353M-09e1 Standard Test Method for Abrasion Resistance of Dimension Stone Subjected to Foot Traffic Using a Rotary Platform, Double-Head Abraser
- ASTM E1855-96 Standard Test Method for Use of 2N2222A Silicon Bipolar Transistors as Neutron Spectrum Sensors and Displacement Damage Monitors
- ASTM E1855-15 Standard Test Method for Use of 2N2222A Silicon Bipolar Transistors as Neutron Spectrum Sensors and Displacement Damage Monitors
Professional Standard - Electron, bipolar personality
- SJ/Z 9184-1995 Specifications for determination of bipolar aluminum electrolytic capacitors used for VCR
- SJ 20973-2007 Capacitors, fixed, double polarized, electrolytic (solid electrolyte), tantalum, established reliability, general specification for
- SJ 20208-1992 Detail specification for capacitors,Electrolytic (Solid eletrolyte),Tantalum, (nonpolarized, sintered slug), Established reliability,Type CAK70
- SJ 50063.1-1994 Capacitors,fixed,electrolytic(solid eiectrolyte)tantalum,(nonpolarized)established reliability,styleCAK,detail specificaion for
- SJ/T 10504-1994 Detail specification for electronic components.Type CA 70 bi-polar fixed tantalum capacitors with solid electrolyte.Assessment level E
Military Standard of the People's Republic of China-General Armament Department, bipolar personality
- GJB 605-1988 SD01A bipolar battery pack technical conditions for missile nuclear weapons
Korean Agency for Technology and Standards (KATS), bipolar personality
- KS C 5208-2002 RELIABILITY ASSURED BI-DIRECTIONAL TRIODE THYRISTORS (LOW CURRENT)
- KS C 5209-1980(2000) RELIABILITY ASSURED BI-DIRECTIONAL TRIODE THYRISTORS (HIGH AND MEDIUM CURRENT)
- KS C 5209-1980 RELIABILITY ASSURED BI-DIRECTIONAL TRIODE THYRISTORS (HIGH AND MEDIUM CURRENT)
- KS C IEC 62776:2020 Double-capped LED lamps designed to retrofit linear fluorescent lamps — Safety specifications
- KS C 5209-2002 RELIABILITY ASSURED BI-DIRECTIONAL TRIODE THYRISTORS (HIGH AND MEDIUM CURRENT)
- KS C IEC 60747-7-2:2006 Semiconductor devices-Discrete devices-Part 7:Bipolar transistors-Section Two:Blank detail specification for case-rated bipolar transistors for low-frequency amplification
- KS C IEC TS 62607-4-1:2019 Nanomaunfacturing — Key control characteristics — Part 4-1:Cathode nanomaterials for nano-enabled electrical energy storage — Electrochemical characterization, 2-electrode cell methods
- KS B ISO 1938-1:2020 Geometrical product specifications(GPS) — Dimensional measuring equipment — Part 1: Plain limit gauges of linear size
- KS B ISO 16570:2013 Geometrical Product Specifications(GPS)-Linear and angular dimensioning and tolerancing:+/-limit specifications-Step dimensions, distances, angular sizes and radii
Danish Standards Foundation, bipolar personality
- DS/IEC 747-7-2:1990 Semiconductor devices. Discrete devices. Part 7: Bipolar transistors. Section two: Blank detail specification for case-rated bipolar transistors for low-frequency amplification
IN-BIS, bipolar personality
YU-JUS, bipolar personality
- JUS N.R1.391-1979 Bvpolar transistors. Essential ratings and characteristics: power transistors
- JUS N.R1.373-1980 Semiconductor ?iodes. Essentialratings and characteristics. Low-power signaldiodes
- JUS N.R1.390-1979 Bipolar tnmmton. Etsential ratings and chancteristics: bw-power signal transistors
Japanese Industrial Standards Committee (JISC), bipolar personality
- JIS C 7233:1978 Reliability assured bi-directional triode thyristors (low current)
- JIS C 7234:1978 Reliability assured bi-directional triode thyristors (high and medium current)
ITU-R - International Telecommunication Union/ITU Radiocommunication Sector, bipolar personality
- REPORT M.2175-2010 Simultaneous dual linear polarization transmission technique using digital cross-polarization cancellation for MSS systems
Group Standards of the People's Republic of China, bipolar personality
- T/ZJCX 0034-2023 Test standard of graphite bipolar plate characteristics for proton exchange membrane fuel cell
- T/CES 084-2021 Test specification for application reliability of insulated-gate bipolar transistor (IGBT) modules for high-voltage direct current (HVDC) transmission using voltage sourced converters (VSC)
- T/CEC 155-2018 General requirements for crimp-type insulated-gate bipolar transistor (IGBT) devices for flexible power transmission
Indonesia Standards, bipolar personality
- SNI 19-2967-1992 130 mm, 1, 9 tp mm, two-faces, double density, unformat flexible disk cartridges, usage 7958 bpr
Aeronautical Radio Inc., bipolar personality
KR-KS, bipolar personality
- KS C IEC 62776-2020 Double-capped LED lamps designed to retrofit linear fluorescent lamps — Safety specifications
- KS C IEC TS 62607-4-1-2019 Nanomaunfacturing — Key control characteristics — Part 4-1:Cathode nanomaterials for nano-enabled electrical energy storage — Electrochemical characterization, 2-electrode cell methods
- KS B ISO 1938-1-2020 Geometrical product specifications(GPS) — Dimensional measuring equipment — Part 1: Plain limit gauges of linear size
RU-GOST R, bipolar personality
- GOST 26169-1984 Radioelectronic equipment electromagnetic compatibility. High-power bipolar high-frequency linear transistors intermodulation component coefficient standards
- PNST 116-2016 Double-capped LED lamps designed to retrofit linear fluorescent lamps. Safety specifications
- GOST R IEC 60254-2-2009 Lead-acid traction batteries. Part 2. Dimensions of cells and terminals and marking of polarity on cells
- GOST 25347-2013 Basic norms of interchangeability. Geometrical product specifications. System for tolerances on linear sizes. Series of tolerances, limit deviations for holes and shafts
General Administration of Quality Supervision, Inspection and Quarantine of the People‘s Republic of China, bipolar personality
- GB/T 20042.6-2011 Proton exchange membrane fuel cell.Part 6: Test method of bipolar plate properties
Taiwan Provincial Standard of the People's Republic of China, bipolar personality
- CNS 14735-8-2003 Specification for single and double sided flexible printed boards with through connections
- CNS 14735.8-2003 Specification for single and double sided flexible printed boards with through connections
- CNS 14735-7-2003 Specification for single and double sided flexible printed boards without through connections
- CNS 14735.7-2003 Specification for single and double sided flexible printed boards without through connections
Standard Association of Australia (SAA), bipolar personality
- AS 4782.2:2019 Double-capped fluorescent lamps — Performance specifications, Part 2: Minimum Energy Performance Standard (MEPS)
- AS/NZS 4782.1:2020 Double-capped fluorescent lamps — Performance specifications, Part 1: General (IEC 60081:1997+AMD1:2000 CSV (ED.5.1), MOD)
International Organization for Standardization (ISO), bipolar personality
- ISO 10575:2012 Resilient floor coverings - Specification for rubber sheet floor coverings with backing
American National Standards Institute (ANSI), bipolar personality
- ANSI X3.121-1984 Information Systems - Two-Sided, Unformatted, 8-Inch (200-mm), 48-TPI, Double-Density, Flexible, Disk Cartridge - General, Physical and Magnetic Requirements for 13 262 FTPR Two-Headed Application
- ANSI/INCITS 121-1984 Information Systems - Two-Sided, Unformatted, 8-Inch (200-mm), 48-tpi, Double-Density, Flexible, Disk Cartridge - General, Physical, and Magnetic Requirements for 13 262 ftpr Two-Headed Application Replaces ANSI X3.121-1984
- ANSI/INCITS 126-1986 One- and Two-Sided Double Density Unformatted 5.25 Inch (130 mm) 96 Tracks per Inch (3.8 Tracks per mm) Flexible Disk Cartridge - General, Physical, and Magnetic Requirements for 7958 BPR Use
- ANSI X3.125-1985 Information Systems - Two-Sided, Double-Density, Unformatted, 5.25-Inch (130-mm), 48-tpi (1,9-tpmm), Flexible Disk Cartridge for 7958 BPR Use - General, Physical and Magnetic Requirements
- ANSI/AWS B2.1-1-007:2002 Gas Tungsten Arc Welding of Galvanized Steel, 10 through 18 Gage, in the as-Welded Condition, with or without Backing
- ANSI/INCITS 125-1985 Information Systems - Two-Sided, Double-Density, Unformatted, 5.25-Inch (130-mm), 48-tpi (1,9-tpmm), Flexible Disk Cartridge for 7958 bpr Use - General, Physical, and Magnetic Requirements Replaces ANSI X3.125-1985
PT-IPQ, bipolar personality
CZ-CSN, bipolar personality
ANSI - American National Standards Institute, bipolar personality
- X3.121-1984 Information Systems - Two-Sided@ Unformatted@ 8-Inch (200-mm)@ 48-tpi@ Double-Density@ Flexible@ Disk Cartridge - General@ Physical@ and Magnetic Requirements for 13 262 ftpr Two-Headed Application
- INCITS 121-1984 Information Systems - Two-Sided@ Unformatted@ 8-Inch (200-mm)@ 48-tpi@ Double-Density@ Flexible@ Disk Cartridge - General@ Physical@ and Magnetic Requirements for 13 262 ftpr Two-Headed Application
- INCITS 125-1985 Information Systems - Two-Sided@ Double-Density@ Unformatted@ 5.25-Inch (130-mm)@ 48-tpi (1@9-tpmm)@ Flexible Disk Cartridge for 7958 bpr Use - General@ Physical@ and Magnetic Requirements
- X3.125-1985 Information Systems - Two-Sided@ Double-Density@ Unformatted@ 5.25-Inch (130-mm)@ 48-tpi (1@9-tpmm)@ Flexible Disk Cartridge for 7958 bpr Use - General@ Physical@ and Magnetic Requirements
- X3.126-1986 Information Systems - One- or Two-Sided@ Double-Density@ Unformatted@ 5.25-Inch (130-mm)@ 96-tpi (3@8-tpmm)@ Flexible Disk Cartridge for 7958 bpr Use - General@ Physical@ and Magnetic Requirements
- INCITS 126-1986 Information Systems - One- or Two-Sided@ Double-Density@ Unformatted@ 5.25-Inch (130-mm)@ 96-tpi (3@8-tpmm)@ Flexible Disk Cartridge for 7958 bpr Use - General@ Physical@ and Magnetic Requirements
- INCITS 126-2017 Information Systems – One- or Two-Sided@ Double-Density Unformatted@ 5.25-Inch (130-mm)@ 96-tpi (3@8 tpmm)@ Flexible Disk Cartridge for 7958 bpr Use – General@ Physical@ and Magnetic Requirements
RO-ASRO, bipolar personality
- STAS 7335/9-1988 Corrosion protection of underground metallic constructions OUTER CATHODIG PROTECTION AND EARTHING BY METALLIC ACTIVE ANO0ES General specifications
Professional Standard - Post and Telecommunication, bipolar personality
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