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silicon wafer

silicon wafer, Total:222 items.

In the international standard classification, silicon wafer involves: Solar energy engineering, Semiconducting materials, Non-ferrous metals, Galvanic cells and batteries, Insulating fluids, Testing of metals, Integrated circuits. Microelectronics, Iron and steel products, Cutting tools, Glass, Vocabularies, Electromechanical components for electronic and telecommunications equipment, Wastes, Semiconductor devices, Insulating materials, Seals, glands, Energy and heat transfer engineering in general, GENERALITIES. TERMINOLOGY. STANDARDIZATION. DOCUMENTATION, Electricity. Magnetism. Electrical and magnetic measurements, Components for electrical equipment, Linear and angular measurements, Agricultural machines, implements and equipment, Internal combustion engines, Piezoelectric and dielectric devices, Rectifiers. Convertors. Stabilized power supply, Audio, video and audiovisual engineering, Data storage devices, Analytical chemistry, Alarm and warning systems, Ventilators. Fans. Air-conditioners.


German Institute for Standardization, silicon wafer

  • DIN V VDE V 0126-18-2-1:2007 Solar wafers - Part 2-1: Measuring the geometric dimensions of silicon wafers - Wafer thickness
  • DIN V VDE V 0126-18-3:2007 Solar wafers - Part 3: Alkaline corrosion damage of crystalline silicon wafers - Method of determining the corrosion rate of mono and multi crystalline silicon wafers (as cut)
  • DIN V VDE V 0126-18-5:2007 Solar wafers - Part 5: Process for measuring the electrical resistance of silicon wafers
  • DIN V VDE V 0126-18-2-2:2007 Solar wafers - Part 2-2: Measuring the geometric dimensions of silicon wafers - Variations in thickness
  • DIN EN 50513:2009 Solar wafers - Data sheet and product information for crystalline silicon wafers for solar cell manufacturing; German version EN 50513:2009
  • DIN V VDE V 0126-18-2-3:2007 Solar wafers - Part 2-3: Measuring the geometric dimensions of silicon wafers - Waviness and warping
  • DIN V VDE V 0126-18-2-4:2007 Solar wafers - Part 2-4: Measuring the geometric dimensions of silicon wafers - Saw marks and step type saw marks
  • DIN V VDE V 0126-18-4-1:2007 Solar wafers - Part 4-1: Process for measuring the electrical characteristics of silicon wafers - Minority carrier lifetime, Inline measuring method
  • DIN EN 62047-9:2012 Semiconductor devices - Micro-electromechanical devices - Part 9: Wafer to wafer bonding strength measurement for MEMS (IEC 62047-9:2011); German version EN 62047-9:2011
  • DIN 50435:1988 Testing of semiconductor materials; determination of the radial resistivity variation of silicon or germanium slices by means of the four-probe/direct current method
  • DIN V VDE V 0126-18-4-2:2007 Solar wafers - Part 4-2: Process for measuring the electrical characteristics of silicon - Minority carrier lifetime, Laboratory measuring method
  • DIN V VDE V 0126-18-6:2007 Solar wafers - Part 6: Method for the measuring of substitutional atomic carbon and interstitial oxygen in silicon used for photovoltaic

Japanese Industrial Standards Committee (JISC), silicon wafer

  • JIS H 0613:1978 Visual inspection for sliced and lapped silicon wafers
  • JIS H 0614:1996 Visual inspection for silicon wafers with specular surfaces
  • JIS H 0611:1994 Methods of measurement of thickness, thickness variation and bow for silicon wafer
  • JIS H 0602:1995 Testing method of resistivity for silicon crystals and silicon wafers with four-point probe

Professional Standard - Non-ferrous Metal, silicon wafer

Group Standards of the People's Republic of China, silicon wafer

General Administration of Quality Supervision, Inspection and Quarantine of the People‘s Republic of China, silicon wafer

  • GB/T 14140-2009 Test method for measuring diameter of semiconductor wafer
  • GB/T 6619-1995 Test methods for bow of silicon slices
  • GB/T 6619-2009 Test method for bow of silicon wafers
  • GB/T 29055-2012 Multi-crystalline silicon wafer for solar cell
  • GB/T 15615-1995 Test method for measuring flexture strength of silicon slices
  • GB/T 26067-2010 Standard test method for dimensions of notches on silicon wafers
  • GB/T 32279-2015 Specification for order entry format of silicon wafers
  • GB/T 6621-2009 Testing methods for surface flatness of silicon slices
  • GB/T 29055-2019(英文版) Multi crystalline silicon wafers for photovoltaic solar cell
  • GB/T 14140.2-1993 Silicon slices and wafers--Measuring of diameter--Micrometer method
  • GB/T 42789-2023 Test method for surface gloss of silicon wafer
  • GB/T 14140.1-1993 Silicon slices and wafers--Measuring of diameter--Optical projecting method
  • GB/T 6620-1995 Test method for measuring warp on silicon slices by nontact scanning
  • GB/T 6620-2009 Test method for measuring warp on silicon slices by noncontact scanning
  • GB/T 11073-1989 Standard method for measuring radial resistivity variation on silicon slices
  • GB/T 6617-1995 Test method for measuring resistivity of silicon wafers using spreading resistance probe
  • GB/T 6618-1995 Test method for thickness and total thickness variation of silicon slices
  • GB/T 11073-2007 Standard method for measuring radial resistivity variation on silicon slices
  • GB/T 6617-2009 Test method for measuring resistivity of silicon wafer using spreading resistance probe
  • GB/T 6618-2009 Test method for thickness and total thickness variation of silicon slices
  • GB/T 32280-2015 Test method for warp of silicon wafers.Automated non-contact scanning method
  • GB/T 29505-2013 Test method for measuring surface roughness on planar surfaces of silicon wafer
  • GB/T 32814-2016 Silicon-based MEMS fabrication technology.Specification for criterion of the SOI wafer based MEMS process
  • GB/T 19922-2005 Standard test methods for measuring site flatness on silicon wafers by noncontact scanning
  • GB/T 13388-2009 Method for measuring crystallographic orientation of flats on single-crystal silicon slices and wafers by X-ray techniques
  • GB/T 14143-1993 Infrared Absorption Measurement Method of Oxygen Content in the Gap of 300-900μm Silicon Wafer
  • GB/T 13388-1992 Method for measuring crystallographic orientation of flats on single crystal sillcon slices and wafers by X-ray techniques
  • GB/T 14139-1993 Silicon epitaxial wafers
  • GB/T 14139-2009 Silicon epitaxial wafers
  • GB/T 19444-2004 Oxygen precipitation characterization of silicon wafers by measurement of interstitial oxygen reduction
  • GB/T 32281-2015 Test method for measuring oxygen, carbon, boron and phosphorus in solar silicon wafers and feedstock.Secondary ion mass spectrometry
  • GB/T 6616-1995 Test method for measuring resistivity of semiconductor silicon or sheet resistance of semiconductor films with a noncontact eddy-current gage
  • GB/T 30859-2014 Test method for warp and waviness of silicon wafers for solar cells
  • GB/T 30869-2014 Test method for thickness and total thickness variation of silicon wafers for solar cell
  • GB/T 24577-2009 Test methods for analyzing organic contaminants on silicon water surfaces by thermal desorption gas chromatography
  • GB/T 26068-2018 Measurement of Carrier Recombination Lifetime of Silicon Wafer and Ingot Non-contact Microwave Reflection Photoconductivity Decay Method
  • GB/T 6616-2009 Test methods for measuring resistivity of semiconductor wafers or sheet resistance of semiconductor films with a noncontact eddy-current gauge
  • GB/T 30860-2014 Test methods for surface roughness and saw mark of silicon wafers for solar cells
  • GB/T 24578-2015 Test method for measuring surface metal contamination on silicon wafers by total reflection X-Ray fluorescence spectroscopy
  • GB/T 24578-2009 Test method for measuring surface metal contamination on silicon wafers by total reflection X-ray fluorescence spectroscopy
  • GB/T 26069-2010 Specification for silicon annealed wafers
  • GB/T 29507-2013 Test method for measuring flatness,thickness and total thickness variation on silicon wafers.Automated non-contact scanning
  • GB/T 42907-2023 Non-contact eddy current induction method for testing non-equilibrium carrier recombination lifetime in silicon ingots, blocks and wafers
  • GB/T 26068-2010 Test method for carrier recombination lifetime in silicon wafers by non-contact measurement of photoconductivity decay by microwave reflectance
  • GB/T 28276-2012 Silicon-based MEMS fabrication technology.Specification for dissolved wafer process

Hebei Provincial Standard of the People's Republic of China, silicon wafer

Korean Agency for Technology and Standards (KATS), silicon wafer

国家市场监督管理总局、中国国家标准化管理委员会, silicon wafer

  • GB/T 29055-2019 Multicrystalline silicon wafers for photovoltaic solar cell
  • GB/T 40279-2021 Test method for thickness of films on silicon wafer surface—Optical reflection method
  • GB/T 37051-2018 Test method for determination of crystal defect density in PV silicon ingot and wafer
  • GB/T 14139-2019 Silicon epitaxial wafers
  • GB/T 32280-2022 Test method for warp and bow of silicon wafers—Automated non-contact scanning method
  • GB/T 39145-2020 Test method for the content of surface metal elements on silicon wafers—Inductively coupled plasma mass spectrometry
  • GB/T 40110-2021 Surface chemical analysis—Determination of surface elemental contamination on silicon wafers by total-reflection X-ray fluorescence (TXRF) spectroscopy

中华人民共和国国家质量监督检验检疫总局、中国国家标准化管理委员会, silicon wafer

American Society for Testing and Materials (ASTM), silicon wafer

  • ASTM F534-02 Standard Test Method for Bow of Silicon Wafers
  • ASTM F534-97 Standard Test Method for Bow of Silicon Wafers
  • ASTM F1152-93 Standard Test Method for Dimensions of Notches on Silicon Wafers
  • ASTM F1152-93(2001) Standard Test Method for Dimensions of Notches on Silicon Wafers
  • ASTM F1618-96 Standard Practice for Determination of Uniformity of Thin Films on Silicon Wafers
  • ASTM F1726-97 Standard Guide for Analyis of Crystallographic Perfection of Silicon Wafers
  • ASTM F1049-00 Standard Practice for Shallow Etch Pit Detection on Silicon Wafers
  • ASTM F104-00 Standard Classification System for Nonmetallic Gasket Materials
  • ASTM F533-96 Standard Test Method for Thickness and Thickness Variation of Silicon Wafers
  • ASTM F533-02 Standard Test Method for Thickness and Thickness Variation of Silicon Wafers
  • ASTM F951-01 Standard Test Method for Determination of Radial Interstitial Oxygen Variation in Silicon Wafers
  • ASTM F81-00 Standard Test Method for Measuring Radial Resistivity Variation on Silicon Wafers
  • ASTM F1727-97 Standard Practice for Detection of Oxidation Induced Defects in Polished Silicon Wafers
  • ASTM F951-96 Standard Test Method for Determination of Radial Interstitial Oxygen Variation in Silicon Wafers
  • ASTM F1810-97 Standard Test Method for Counting Preferentially Etched or Decorated Surface Defects in Silicon Wafers
  • ASTM F523-93(1997) Standard Practice for Unaided Visual Inspection of Polished Silicon Wafer Surfaces
  • ASTM F1239-94 Standard Test Methods for Oxygen Precipitation Characterization of Silicon Wafers by Measurement of Interstitial Oxygen Reduction
  • ASTM F847-94(1999) Standard Test Methods for Measuring Crystallographic Orientation of Flats on Single Crystal Silicon Wafers by X-Ray Techniques
  • ASTM F1527-00 Standard Guide for Application of Silicon Standard Reference Materials and Reference Wafers for Calibration and Control of Instruments for Measuring Resistivity of Silicon

工业和信息化部, silicon wafer

  • YS/T 26-2016 Silicon wafer edge contour inspection method
  • HG/T 5962-2021 Silicon wafer cutting waste liquid treatment and disposal methods
  • SJ/T 11631-2016 Test method for appearance defects of silicon wafers for solar cells
  • SJ/T 11630-2016 Test method for geometric dimensions of silicon wafers for solar cells
  • SJ/T 11627-2016 On-line testing method of silicon wafer resistivity for solar cells
  • SJ/T 11632-2016 Testing method for microcrack defects in silicon wafers for solar cells
  • SJ/T 11629-2016 Online photoluminescence analysis method of silicon wafers and cells for solar cells
  • SJ/T 11628-2016 Online testing method for silicon wafer size and electrical characterization for solar cells

Association Francaise de Normalisation, silicon wafer

  • NF C57-203*NF EN 50513:2009 Solar wafers - Data sheet and product information for crystalline silicon wafers for solar cell manufacturing.
  • NF EN 50513:2009 Tranches de silicium solaires - Fiche technique et information produit sur les tranches au silicium cristallin pour la fabrication de cellules solaires
  • NF C96-050-9*NF EN 62047-9:2012 Semiconductor devices - Micro-electromechanical devices - Part 9 : wafer to wafer bonding strength measurement for MEMS.
  • NF EN 62276:2018 Tranches monocristallines pour applications utilisant des dispositifs à ondes acoustiques de surface (OAS) - Spécifications et méthodes de mesure

Defense Logistics Agency, silicon wafer

Professional Standard - Ferrous Metallurgy, silicon wafer

Professional Standard - Building Materials, silicon wafer

Military Standard of the People's Republic of China-General Armament Department, silicon wafer

  • GJB 1944-1994 Space solar cell silicon wafer specifications
  • GJB 2052-1994 Specification for silicon wafers for infrared charge-coupled devices

Institute of Interconnecting and Packaging Electronic Circuits (IPC), silicon wafer

International Electrotechnical Commission (IEC), silicon wafer

  • IEC 62047-9:2011 Semiconductor devices - Micro-electromechanical devices - Part 9: Wafer to wafer bonding strength measurement for MEMS
  • IEC 62047-9:2011/COR1:2012 Semiconductor devices - Micro-electromechanical devices - Part 9: Wafer to wafer bonding strength measurement for MEMS
  • IEC 62276:2016 Single crystal wafers for surface acoustic wave (SAW) device applications - Specifications and measuring methods

Shaanxi Provincial Standard of the People's Republic of China, silicon wafer

  • DB61/T 512-2011 Inspection rules for monocrystalline silicon wafers for solar cells

European Committee for Electrotechnical Standardization（CENELEC）, silicon wafer

  • EN 62047-9:2011 Semiconductor devices - Micro-electromechanical devices - Part 9: Wafer to wafer bonding strength measurement for MEMS

Professional Standard - Machinery, silicon wafer

  • JB/T 9658-1999 Slitter for electrical steel
  • JB/T 904-1999 Oil - resinous varnish of silicon steel sheet
  • JB/T 7061-1993 Silicon wafers intended to be used in power semiconductor devices
  • JB/T 56175-1999 Product quality classification of silicon steel sheet slitting machine
  • JB/Z 169-1981 Technical conditions for acceptance of hot-rolled silicon steel sheets for electrical purposes

Taiwan Provincial Standard of the People's Republic of China, silicon wafer

Shanghai Provincial Standard of the People's Republic of China, silicon wafer

  • DB31/ 792-2014 Norm of energy consumption per unit products for monocrystalline silicon and silicon wafers
  • DB31/T 792-2014 Energy consumption quota per unit product of silicon single crystal and its silicon wafer
  • DB31/ 792-2020 Energy consumption quota per unit product of silicon single crystal and its silicon wafer

Professional Standard - Electron, silicon wafer

  • SJ/T 31096-1994 Readiness requirements and methods of inspection and assessment for high-precision silicon wafer grinding machines
  • SJ 20636-1997 Test method for oxygen and carbon contents of large diameter thin silicon wafer in microzone for use in IC
  • SJ 1549-1979 Silicon epitaxial wafers (Provisional)
  • SJ/T 10627-1995 Test methods for oxygen precipitation characterization of silicon wafers by measurement of interstitial oxygen reduction
  • SJ 1550-1979 Method of inspection for silicon epitaxial wafers
  • SJ/Z 1610-1980 Atlas of Silicon Epiwafer Defects

Professional Standard - Aviation, silicon wafer

机械电子工业部, silicon wafer

KR-KS, silicon wafer

  • KS C IEC 62276-2019 Single crystal wafers for surface acoustic wave(SAW) device applications — Specifications and measuring methods

Professional Standard - Agriculture, silicon wafer

Aerospace Industries Association, silicon wafer

AIA/NAS - Aerospace Industries Association of America Inc., silicon wafer

JP-JEITA, silicon wafer

National Metrological Verification Regulations of the People's Republic of China, silicon wafer

  • JJG 405-1986 Verification Regulation of the Standard Specimen of Magnetic Sheet and Strip

Professional Standard - Commodity Inspection, silicon wafer

  • SN/T 3112-2012 Method of distinguishing grain orientation and non-orientation of cold-rolled silicon steel sheets

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