H80 半金属与半导体材料综合 标准查询与下载

DB65/T 3485-2013 太阳能级多晶硅块少数载流子寿命测量方法

Measurement method for minority carrier lifetime of solar grade polysilicon block

DB35/T 1146-2011 硅材料中杂质元素含量测定 辉光放电质谱法

本标准规定了测定硅材料中杂质元素含量的辉光放电质谱法（G D M S )所涉及的术语和定义、原理、试剂与材料、仪器设备、样品要求、样品要求、分析步骤、结果计算、允许偏差。 本标准适用于纯度不高于99.99999%的硅材料中的杂质元素L i、Be、B、N a、M g、A 1、P、K、T h、U等元素的测定

Determination of Impurity Element Content in Silicon Materials by Glow Discharge Mass Spectrometry

ASTM E1438-11 使用SIMS测量溅镀深度剖面接口宽度的标准指南

Although it would be desirable to measure the extent of profile distortion in any unknown sample by using a standard sample and this guide, measurements of interface width (profile distortion) can be unique to every sample composition (1, 2, 3).3 This guide, that describes a method that determines the unique width of a particular interface for the chosen set of operating conditions. It is primarily intended to provide a method for checking on proper or consistent, or both, instrument performance. Periodic analysis of the same sample followed by a measurement of the interface width, in accordance with this guide, will provide these checks. The procedure described in this guide is adaptable to any layered sample with an interface between layers in which a nominated element is present in one layer and absent from the other. It has been shown that for SIMS in particular (4, 5) and for surface analysis in general (6, 7), only rigorous calibration methods can determine accurate interface widths. Such procedures are prohibitively time-consuming. Therefore the interface width measurement obtained using the procedure described in this guide may contain significant systematic error (8). Therefore, this measure of interface width may have no relation to similar measures made with other methods. However, this does not diminish its use as a check on proper or consistent instrument performance, or both.1.1 This guide provides the SIMS analyst with a method for determining the width of interfaces from SIMS sputtering data obtained from analyses of layered specimens. This guide does not apply to data obtained from analyses of specimens with thin markers or specimens without interfaces such as ion-implanted specimens.1.2 This guide does not describe methods for the optimization of interface width or the optimization of depth resolution.This standard does not purport to address all of the safety concerns, if any, associated with its use. It is the responsibility of the user of this standard to establish appropriate safety and health practices and determine the applicability of regulatory limitations prior to use.

Standard Guide for Measuring Widths of Interfaces in Sputter Depth Profiling Using SIMS

DIN 50451-5:2010 半导体工艺用材料测试.液体中痕量元素测定.第5部分:在每千克微克和每千克豪微克范围之内的痕量元素测定用样品和样品制备装置的材料选择及其适用性试验指南

This document gives a guideline for the selection of materials and testing of their suitability for apparatus for sampling and sample preparation used for the determination of trace elements in high-purity chemical products for semiconductor technology. It is applicable for determinations of trace elements in ranges of micrograms per kilogram and nanograms per kilogram.

Testing of materials for semiconductor technology - Determination of trace elements in liquids - Part 5: Guideline for the selection of materials and testing of their suitability for apparatus for sampling and sample preparation for the determination of t

YS/T 679-2008 非本征半导体中少数载流子扩散长度的稳态表面光电压测试方法

1.1 本标准适用于非本征单晶半导体材料样品或相同导电类型重掺衬底上沉积已知电阻率的同质外延层中的少数载流子扩散长度的测量。要求样品或外延层厚度大于 4 倍的扩散长度。 1.2 本标准是为单晶硅样品的应用而开发的，可用于测量其他半导体，如砷化镓（同时调整相应的光照波长（能量）范围和样品的制备工艺）上的有效扩散长度和评价晶粒间界垂直于表面的多晶硅样品上有效扩散长度。本标准也可用于硅片的洁净区的宽度测定。 1.3 本标准对样品的电阻率和寿命的应用极限尚未确定，但已经成功的对电阻率（0.l～50）Ω·cm 、载流子寿命短至 2ns 的 p 和 n 型硅样品进行了测量。本标准测量的扩散长度仅在室温22℃±0.5℃下进行，寿命和扩散长度是温度的函数。

Test methods for minority carrier diffusion length in extrinsic semiconductors by measurement of steady-state surface photovoltage

DIN 50451-4:2007 半导体工艺用材料测试.液体中痕量元素测定.用电感耦合等离子体质谱测定法测定纯净水中34中微量元素

This Standard specifies a test method for the determination of 34 elements in ultra pure water by mass spectrometry with inductively coupled plasma (ICP-MS). The method is applicable to mass fractions of elements from 10 ng/kg to 1000 ng/kg.

Testing of materials for semiconductor technology - Determination of trace elements in liquids - Part 4: Determination of 34 elements in ultra pure water by mass spectrometry with inductively coupled plasma (ICP-MS)

BS EN 61788-10:2006 超导性.临界温度测量.用电阻法测量复合超导体的临界温度

This part of IEC 61788 specifies a test method for the resistive determination of the critical temperature of composite superconductors for industrial use. The composite superconductors covered in this standard include Cu/Nb-Ti, Cu/Cu-Ni/Nb-Ti and Cu-Ni/Nb-Ti composite superconductors, Cu/Nb3Sn and Cu/Nb3Al composite superconductors, and metal-sheathed MgB2 composite superconductors, and metal-stabilized Bisystem oxide superconductors and Yttrium- or rare-earth-based coated conductors that have a monolithic structure and a shape of round, flat or square wire containing mono- or multicores of superconductors.

Superconductivity - Part 10: Critical temperature measurement - Critical temperature of composite superconductors by a resistance method

BS EN 61788-3:2006 超导性.临界电流测量.涂层银或银合金的Bi-2212和Bi-2223氧化超导体的直流临界电流

This part of IEC 61788 covers a test method for the determination of the dc critical current of short and straight Ag- and/or Ag alloy-sheathed Bi-2212 and Bi-2223 oxide superconductors that have a monolithic structure and a shape of round wire or flat or square tape containing mono- or multicores of oxides. This method is intended for use with superconductors that have critical currents less than 500 A and n-values larger than 5. The test is carried out with and without an applying external magnetic field. For all tests in a magnetic field, the magnetic field is perpendicular to the length of the specimen. In the test of a tape specimen in a magnetic field, the magnetic field is parallel or perpendicular to the wider tape surface (or one surface if square). The test specimen is immersed either in a liquid helium bath or a liquid nitrogen bath during testing. Deviations from this test method that are allowed for routine tests and other specific restrictions are given in this standard.

Superconductivity - Part 3: Critical current measurement - DC critical current of Ag- and/or Ag alloy-sheathed Bi-2212 and Bi-2223 oxide superconductors

GJB 5443-2005 高体积分数碳化硅颗粒／铝基复合材料规范

本规范规定了高体积分数碳化颗粒/铝基复合材料（简称高体分 SiCp/Al 复合材料）的要求、质量保证规定、交货准备和说明事项等内容。 本规范适用于特殊精密仪器、电子元器件制造用高体分SiCp/Al复合材料。

Specification for high volume fraction SiCp/Al composites

BS EN 61788-8:2003 超导性.交流电损耗测量.用拾波线圈法测量暴露于横向交流磁场的Cu/Nb-Ti合成超导导线的交流电总损耗量

This part of IEC 61788-8 specifies the measurement method of total AC losses by the pickup coil method in Cu/Nb-Ti composite superconducting wires exposed to a transverse alternating magnetic field. The losses may contain both hysteresis and coupling losses. The standard method to measure only the hysteresis loss in DC or low-sweep-rate magnetic field is specified in IEC 61788-13 [2]. The specimen shall be a multifilamentary round or rectangular wire, expected to be mainly used for pulsed coil applications with relatively higher frequencies or sweep rates up to 1 Hz or 4 T/s, with diameter or average size from 0,2 mm to 1,0 mm, filament diameter from 1 μm to around 50 μm, and a coupling time constant less than about 40 ms. The present method can be also extended to the AC loss measurement in a higher range of frequency and sweep rate up to more than 10 Hz or 40 T/s for three-component superconducting wires (IEV 815-04-33) with a shorter coupling time constant down to about 0,1 ms (see Annex E).

Superconductivity - AC loss measurements - Total AC loss measurement of Cu/Nb-Ti composite superconducting wires exposed to a transverse alternating magnetic field by a pickup coil method

BS EN 61788-13:2003 超导性.交流电损耗测量.Cu/Nb-Ti多丝复合超导体磁滞损耗的磁强计测量法

This part of IEC 61788 describes considerations for the measurement of hysteretic loss in Cu/Nb-Ti multifilamentary composites using DC- or low-ramp-rate magnetometry. This standard focuses on the measurement of hysteretic loss in multifilamentary Cu/Nb-Ti composite conductors. Measurements are assumed to be on round wires with temperatures at or near 4,2 K. DC or low-ramp-rate magnetometry will be performed using either a superconducting quantum interference device (SQUID magnetometer) or a vibrating-sample magnetometer (VSM). In case differences between the calibrated magnetometer results are noted, the VSM results, extrapolated to zero ramp rate, will be taken as definitive.

Superconductivity - AC loss measurements - Magnetometer methods for hysteresis loss in Cu/Nb-Ti multifilamentary composites

BS EN 61788-11:2003 超导性.剩余电阻率的测量.Nb3Sn复合超导体的剩余电阻率

This part of IEC 61788 covers a test method for the determination of the residual resistance ratio (RRR) of Nb3Sn composite conductors. This method is intended for use with superconductor specimens that have a monolithic structure with a rectangular or round cross section, RRR less than 350 and cross-sectional area less than 3 mm, and have received a reaction heat-treatment. Ideally, it is intended that the specimens are as straight as possible; however, this is not always the case, thus care must be taken to measure the specimen in its as received condition. All measurements are done without an applied magnetic field. The method described in the body of this standard is the "reference" method; optional acquisition methods are outlined in Annex A.

Superconductivity - Residual resistance ratio measurement - Residual resistance ratio of Nb3Sn composite superconductors

NF C31-888-12:2003 超导性.第12部分:基体与超导体体积比的测量.铌₃锡复合超导金属线的铜对非铜体积之比

Supraconductivity - Part 12 : matrix to superconductor volume ratio measurement - Copper to non-copper volume ratio of Nb3Sn composite superconducting wires.

NF C31-888-10:2003 超导性.第10部分:临界温度测量.用电阻法测量铌-钛、铌₃锡和铋-系统氧化物复合超导体的临界温度

Superconductivity - Part 10 : critical temperature measurement - Critical temperature of Nb-Ti, Nb3Sn, and Bi-system oxide composite superconductors by a resistance method.

BS EN 61788-7:2002 超导性.电子特性测量.微波频率下超导体的表面电阻

This part, of IEC 61788 describes measurement of the surface resistance of superconductors at microwave frequencies by the standard two-resonator method. The object of measurement is the temperature dependence of Rs at the resonant frequency. The applicable measurement range of surface resistances for this method is as follows: - Frequency: 8 GHz

Superconductivity - Electronic characteristic measurements - Surface resistance of superconductors at microwave frequencies

BS EN 61788-12:2003 超导性.超导体体积比测量矩阵.铜与Nb3Sn复合超导导线的非铜体积比

Superconductivity - Matrix to superconductor volume ratio measurement - Copper to non-copper volume ratio of Nb3Sn composite superconducting wires

BS EN 61788-12:2002 超导性.超导体体积比测量矩阵.铜与Nb3Sn复合超导导线的非铜体积比

This standard describes the test method for determining the copper to non-copper volume ratio of Cu/Nb3Sn wires. The test method given hereunder is applicable to Nb3Sn composite superconducting wires with a cross-sectional area of 0,1 mm to 3 mm and a copper to non-copper volume ratio of 0,1 or more. It does not make any reference to the filament diameter; however, it is not applicable to those superconducting wires with their filament, Sn, CuSn, barrier material and other non-copper portions dispersed in the copper matrix or those with the stabilizer dispersed. Furthermore, the copper to non-copper volume ratio can be determined on specimens before or after the Nb3Sn formation heat treatment process. The Cu/Nb3Sn wire has a monolithic structure with a round or rectangular cross-section. Though degraded in accuracy, this method may be applicable to the measurement of the copper to non-copper volume ratio of the Cu/Nb3Sn wires whose cross-section and copper to non-copper volume ratio fall outside the specified ranges. This test method may be applied to other composite superconducting wires after some appropriate modifications.

Superconductivity - Matrix to superconductor volume ratio measurement - Copper to non-copper volume ratio of Nb3Sn composite superconducting wires

BS EN 61788-10:2002 超导性.临界温度测量.用电阻法测量Nb-Ti、Nb3Sn和铋族氧化物复合超导体的临界温度

This part of IEC 61788 specifies a test method for the resistive determination of the critical temperature of composite superconductors for industrial use. The composite superconductors covered in this standard include Cu/Nb-Ti, Cu/Cu-Ni/Nb-Ti and Cu-Ni/Nb-Ti composite superconductors, Cu/Nb3Sn composite superconductors and metal-stabilized Bi-system oxide superconductors that have a monolithic structure and a shape of round, flat or square wire containing mono- or multi-cores of superconductors (see clause A.1).

Superconductivity - Critical temperature measurement - Critical temperature of Nb-Ti, Nb3Sn, and Bi-system oxide composite superconductors by a resistance method

BS EN 61788-10:2003 超导性.临界温度测量.用电阻法测量Nb-Ti、Nb3Sn和铋族氧化物复合超导体的临界温度

Superconductivity - Critical temperature measurement - Critical temperature of Nb-Ti, Nb3Sn, and Bi-system oxide composite superconductors by a resistance method

BS EN 61788-5:2003 超导性.超导体体积比率测量矩阵.铜与Cu/Nb-Ti复合超导体的超导体体积比率

Superconductivity - Matrix to superconductor volume ratio measurement - Copper to superconductor volume ratio of Cu/Nb-Ti composite superconductors