L41 半导体二极管 标准查询与下载

SJ 50033/22-1994 半导体分立器件.2CC51E型硅电调变容二极管详细规范

Semiconductor discrete device.Detail specification for silicon tuning varactor diode for type 2CC51E

SJ 50033.49-1994 半导体分立器件.2CJ4220系列阶跃二极管详细规范

Semiconductor discrete device.Detail specification for step recovery diodes for 2CJ4220 series

SJ 50033/28-1994 半导体分立器件.2CV334、2CV3338型微带混频二极管详细规范

Semiconductor discrete device.Detail specification stripline mixer diodes for 2CV334,2CV3338

SJ 50033.56-1994 半导体分立器件.2CK85型硅开关二极管详细规范

Semiconductor discrete device.Detail specification for type 2CK85 silicon switching diode

SJ 50033.55-1994 半导体分立器件.2CK82型硅开关二极管详细规范

Semiconductor discrete device.Detail specification for type 2CK82 silicon switching diode

SJ 50033/41-1994 GR9414型半导体红外发射二极管详细规范

Detail specification for type GR9414 semiconductor infrared light eitting diode

SJ 50033/27-1994 半导体分立器件.2EC600系列砷化镓变容二极管详细规范

Semiconductor discrete device.Detail specification for GaAs varactor diodes for 2EC600 series

SJ 50033/4-1994 半导体分立器件.GP和GT级GF 111型半导体红色发光二极管详细规范

Semiconductor discrete device.Detail specification for semiconductor red light emitting diodes for type GF 111 of GP and GT classes

SJ 50033/26-1994 半导体分立器件.2CW1006～2CW1015型硅电压调整二极管详细规范

Semiconductor discrete device.Detail specification for type 2CW1006～2CW1015 silicon voltage-regulator diode

JEDEC JESD24-10-1994 JESD24的补遗－功率MOSFET Drain-Sources二极管的逆向恢复时间trr测量的测试方法

Test Method for Measurement of Reverse Recovery Time trr for Power MOSFET Drain-Source Diodes Addendum to JEDEC JESD 24

Test Method for Measurement of Reverse Recovery Time trr for Power MOSFET Drain-Source Diodes Addendum to JEDEC JESD 24

BS QC 750109:1994 电子元器件质量评估协调体系规范.空白详细规范.电流大于100A的环境温度额定和外壳温度额定的整流器二极管(包括雪崩式整流器二极管)

Lists the ratings, characteristics and inspection requirements which shall be included as mandatory requirements in accordance with BS QC 750100.

Specification for harmonized system of quality assessment for electronic components - Blank detail specification - Rectifier diodes (including avalanche rectifier diodes), ambient and case-rated, for currents greater than 100 A

DLA MIL-L-376 C (1)-1994 铅二极管

This amendment forms a part of MIL - L -376C, dated 12 January 1983, and is approved for use by all Departments and Agencies of the Department of Defense.

LEAD DIOXIDE, TECHNICAL

IEC 60747-3/AMD2:1993 半导体器件 分立器件 第3部分:信号二极管(包括开关二极管)及调整二极管 修改2

Replaces clause 2 (Terms related to ratings and characteristics) and subclause 3.4.3 (Forward recovery time), amends the table in subclause 3.3.

Semiconductor devices; discrete devices; part 3: signal (including switching) and regulator diodes; amendment 2

SJ 20274-1993 半导体分立器件2CK84型硅开关二极管详细规范

本规范规定了2CK84型硅开关二极管详细要求，该种器件按GJB 33《半导体分立器件总规范》的规定，提供产品保证的三个等级(GP、GT和GCT级)。

Semiconductor discrete devices Detail specificion for silicon switching diode for type 2CK84

ITU-T I.501-1993 互通服务(研究组18)11页

the provision of services in an ISDN, there wili exist situations where a service will require interworking with one or more other services. The intent of this Recommendation is to develop the general principles of service interworking and identifj the

Service Interworking (Study Group XVIII) 11 pp

JIS C 7031:1993 小型信号二极管的测量方法

この規格は，電子装置に使用する検波，スイッチング，混合などに用いる小信号用半導体ダィオード(以下,ダィオードという。)の電気的測定方法について規定する。

Measuring methods for small signal diodes

SJ 20071-1992 半导体分立器件.2CK4148型硅开关二极管详细规范

Semiconductor discrete device.Detail specification for silicon switching diode for type 2CK4148

SJ 20070-1992 半导体分立器件.2CK105型硅开关二极管详细规范

Semiconductor discrete device.Detail specification for silicon switching diode for type 2CK105

SJ 20068-1992 半导体分立器件.2DW14～18型低噪声硅电压基准二极管详细规范

Semiconductor discrete device.Detail specification for lower noise for silion voltage reference diode for type 2DW 14～18

SJ 20069-1992 半导体分立器件.2CK76型硅开关二极管详细规范

Semiconductor discrete device.Detail specification for silicon switching diode for type 2CK76