L41 半导体二极管 标准查询与下载

IEC 60747-12-3:1998 半导体器件 第12-3部分:光电子器件 显示用发光二极管空白详细规范

Semiconductor devices - Part 12-3: Optoelectronic devices - Blank detail specification for light-emitting diodes - Display application

DLA MIL-L-376 C NOTICE 1-1998 铅二极管

The General Services Administration has authorized the use of this commercial item description as a replacement for Military Specifications MIL-V-16720E and MIL-V-16721D which are cancelled.

LEAD DIOXIDE, TECHNICAL

BS QC 720102:1997 光纤系统和子系统用带引线的激光二极管模数的空白详细规范

To be read in conjunction with BS QC 700000:1991, BS QC 720100:1991

Blank detail specification for laser diode modules with pigtail for fibre optic systems and subsystems

SJ 50033/137-1997 半导体光电子器件.GF216型橙色发光二极管详细规范

Semiconductor optoelectronic devices.Detail specification for orange-red light emitting diode for type GF216

CIE 127-1997 发光二极管(LEDs)的测量

Semiconductor devices which emit optical radiation can be divided into two distinct groups, luminescent diodes, usually known as Light Emitting Diodes or LEDs, and laser diodes. The present repot is concerned only with the first group, conventional LEDs. Laser diodes, like other types of lasers, emit radiation in a coherent, spatially narrow beam with quasi-monochromatic spectral characteristics. They require a completely different measurement technique to ordinary LEDs and are not dealt with in this report.

Measurement of LEDs

ASTM F78-97(2002) 使用副标准件校准氦检漏仪的试验方法

1.1 This test method covers a procedure for calibrating a mass spectrometer-type helium leak detector with a series of commercially available calibrated leaks without need for recourse to a primary standard.1.2 Leak detector parameters determined by this test method include:1.2.1 Minimum detectable signal, drift noise (8.5, with recorder; 8.6, without recorder),1.2.2 Response time,1.2.3 Minimum detectable leak rate, and1.2.4 Sensitivity.1.3 This standard does not purport to address the safety concerns, if any, associated with its use. It is the responsibility of the user of this standard to establish appropriate safety and health practices and determine the applicability of regulatory limitations prior to use.

Standard Test Method for Calibration of Helium Leak Detectors by Use of Secondary Standards

DIN EN 120005:1996 空白详细规范:光电二极管,光电二极管阵列(非光纤用)

This document is a blank detail specification for photodiodes, photodiode-arrays (not intended for fibre optic applications).#,,#

Blank detail specification - Photodiodes, photodiode-arrays (not intended for fibre optic applications); German version EN 120005:1992

SJ 50033/107-1996 半导体分立器件.2EY621、2EY622、2EY623型体效应二极管详细规范

Semiconductor discrete device.Detail specification for Gunn diodes for type 2EY621,2EY622,2EY623

SJ 50033/108-1996 半导体分立器件.2EY5671、2EY5672型体效应二极管详细规范

Semiconductor discrete device.Detail specification for Gunn diodes for type 2EY5671,2EY5672

SJ 50033/97-1995 半导体分立器件.2CJ4011、2CJ4012、2CJ4021、2CJ4022型阶跃恢复二极管详细规范

Semiconductor discrete devices.Detail specification for types 2CJ4011,2CJ4012,2CJ4021 and 2CJ4022 step recovery diodes

SJ 50033/98-1995 半导体分立器件.2CJ4211、2CJ4212型阶跃恢复二极管详细规范

Semiconductor discrete devices.Detail specification for type 2CJ4211 and 2CJ4212 step recovery diodes

SJ 50033/100-1995 半导体分立器件.2CJ60型阶跃恢复二极管详细规范

Semiconductor discrete devices.Detail specification for type 2CJ60 step recovery diodes

SJ 50033/70-1995 半导体分立器件.PIN35系列PIN二极管详细规范

Semiconductor discrete device.Detail specification for type PIN 35 series for PIN diode

SJ 50033/69-1995 半导体分立器件.PIN30系列PIN二极管详细规范

Semiconductor discrete device.Detail specification for type PIN 30 series for PIN diode

SJ 50033/71-1995 半导体分立器件.PIN342型PIN二极管详细规范

Semiconductor discrete device.Detail specification of type PIN 342 series for PIN diode

SJ 50033/72-1995 半导体分立器件.PIN323型PIN二极管详细规范

Semiconductor discrete device.Detail specification of type PIN 323 series for PIN diode

BS EN 150014:1997 电子元器件质量评定协调体系.空白详细规范:防瞬时过电压闸流二极管

This standard lists the ratings, characteristics and inspection requirements which shall be included as mandatory requirements in accordance with BS CECC 50000 in any detail specification for these devices.

Harmonized system of quality assessment for electronic components - Blank detail specification: Thyristor diodes, transient overvoltage suppressors

WJ 2265-1995 带前放硅雪崩光电二极管规范

Specifications for Preamplified Silicon Avalanche Photodiodes

SJ 50033/27-1994 半导体分立器件.2EC600系列砷化镓变容二极管详细规范

Semiconductor discrete device.Detail specification for GaAs varactor diodes for 2EC600 series

SJ 50033/28-1994 半导体分立器件.2CV334、2CV3338型微带混频二极管详细规范

Semiconductor discrete device.Detail specification stripline mixer diodes for 2CV334,2CV3338