L41 半导体二极管 标准查询与下载
共找到 223 条与 半导体二极管 相关的标准，共 15 页
Commutating Diode Safe Operating Area Test Procedure for Measuring DV/DT During Reverse Recovery of Power Transistors Addendum to JEDEC JESD 24
Commutating Diode Safe Operating Area Test Procedure for Measuring DV/DT During Reverse Recovery of Power Transistors Addendum to JEDEC JESD 24
- ICS
- 31.080.10
- CCS
- L41
- 发布
- 1992-08-01
- 实施
The standard contains as a collection of several publication published earlier and a set of draft standards all informations necessary for signal diodes and regulator diodes.
Semiconductor devices; discrete devices; part 3: signal diodes and regulator diodes; identical with IEC 60747-3:1985
- ICS
- 31.080.10
- CCS
- L41
- 发布
- 1992-04
- 实施
This standard i s intended to cover the measurement of m s e voltage i n voltage regulator diodes in the reverse breakdown regicn. It i s intended to describe noise voltage measurement at specified conditions, but may also be used 3s a guide f o r m a k i ~ g such measurements at cther than specified conditions.
Voltage Regulator Diode Noise Voltage Measurement
- ICS
- 31.080.10
- CCS
- L41
- 发布
- 1992-01-01
- 实施
This specification establishes guideline requirements and quality assurance provisions for gallium arsenide power field-effect transistors (FETs, also known as MESFETs) designed for use in high-reliability space applications such as spacecraft communications transmitters. The specification identifies the electrical parameters, wafer acceptance tests, screening tests, qudification tests, and lot acceptance inspection tests pertinent to power GaAs FETs. For the purposes of this specification, a power GaAs FET is defined as one used as an RF amplifier which is operated in compression. The specification is intended to be applicable to packaged and chip-carrier parts; consequently portions of the specification may not be applicable to unpackaged and unmounted chips
Transistor, Gallium Arsenide Power Fet, Generic Specification
- ICS
- 31.080.10
- CCS
- L41
- 发布
- 1992-01-01
- 实施
This standard provides guidance for achieving equilibrium when measuring temperature sensitive static parameters of signal diodes.
Thermal Equilibrium Conditions for Measurement of Diode Static Parameters
- ICS
- 31.080.10
- CCS
- L41
- 发布
- 1992
- 实施
JEDEC standards and publications contain material that has been prepared, reviewed, and approved through the JEDEC Board of Directors level and subsequently reviewed and approved by the JEDEC legal counsel.
Conditions for Measurement of Diode Static Parameters [Superseded: JEDEC EIA-302, JEDEC 302]
- ICS
- 31.080.10
- CCS
- L41
- 发布
- 1992
- 实施
Blank detail specification: general purpose semiconductor diodes
- ICS
- CCS
- L41
- 发布
- 1991-12
- 实施
Replaces the existing sub-clauses: 2.4.3 (on page 17), 1.3 and 1.4 (on page 23), 1.2 (on page 25), 1.3 (on page 27) and 4.1 (on page 51).
Semiconductor devices; discrete devices; part 3: signal (including switching) and regulator diodes; amendment 1
- ICS
- 31.080.10
- CCS
- L41
- 发布
- 1991-10
- 实施
Defines quality assessment procedures in such a manner that electronic components are acceptable in all other participating countries without the need for further testing. Refers to IEC 747-10/QC 700000 and IEC 747-11/QC 750100.
Semiconductor devices; discrete devices; part 7: bipolar transistors; section 4: blank detail specification for case-rated bipolar transistors for high-frequency amplification
- ICS
- 31.240
- CCS
- L41
- 发布
- 1991-07
- 实施
- 2007-07-27
Defines quality assessment procedures in such a manner that electronic components are acceptable in all other participating countries without the need for further testing. Refers to IEC 747-10/QC 700000 and IEC 747-11/QC 750100.
Semiconductor devices; discrete devices; part 7: bipolar transistors; section 3: blank detail specification for bipolar transistors for switching appliances
- ICS
- 31.080.30
- CCS
- L41
- 发布
- 1991-07
- 实施
- 2007-07-27
JEDEC standards and publications contain material that has been prepared, reviewed, and approved through the JEDEC Board of Directors level and subsequently reviewed and approved by the JEDEC legal counsel.
Thermal Impedance Measurements for Insulated Gate Bipolar Transistors Addendum to JEDEC JESD 24
- ICS
- 31.080.10
- CCS
- L41
- 发布
- 1991
- 实施
1.1 Prezentul standard se refer? la metodele de determinare a con?inutului de acizi organici ?i de s?pun din cauciucul butadien-stirenic rece brut. 1.2 [Deoarece metodele descrise ?n prezentul standard implic? o extrac?ie prealabif? cu a
Elastomers. Raw styrene-butadiene rubber. Determination of organic acids and soap
- ICS
- CCS
- L41
- 发布
- 1990-11-01
- 实施
1 Prezentul standard se refer? la amestecul de cauciuc utilizat la confec?ionarea gar-niturilor de etan?aRe pentru industria alimentar? si anume : industria laptelui, berii, vinu-rilor, sucurilor de fructe si sucurilor de tomate. 2 Amestecul de ca
Rubber mixture for gaskets used in food industry
- ICS
- CCS
- L41
- 发布
- 1990-07-01
- 实施
JEDEC standards and publications contain material that has been prepared, reviewed, and approved through the JEDEC Board of Directors level and subsequently reviewed and approved by the JEDEC legal counsel.
Thermal Impedance Measurements for Bipolar Transistors (Delta Base- Emitter Voltage Method) Addendum to JEDEC JESD 24
- ICS
- 31.080.10
- CCS
- L41
- 发布
- 1990
- 实施
Semiconductor devices. Discrete devices and integrated circuits. Part 7 : bipolar transistors.
- ICS
- 31.080.30
- CCS
- L41
- 发布
- 1989-06-01
- 实施
- 1989-06-20
This standard deals with transistors and thyristors. Tabular layouts of article characteristics make it possible that standardized and non-standardized articles which are similar to each other can be grouped, fined and selected.#,,#
Tabular layouts of article characteristics for transistors and thyristors
- ICS
- 21.020
- CCS
- L41
- 发布
- 1988-12-01
- 实施
Tabular layouts of article characteristics for semiconductor diodes
- ICS
- 21.020
- CCS
- L41
- 发布
- 1988-12-01
- 实施
Semiconductor discrete devices and integrated circuits; part 7: bipolar transistors
- ICS
- 31.080.30
- CCS
- L41
- 发布
- 1988
- 实施
NF C 86-812-1981 Supplement 1
- ICS
- 31.080.10
- CCS
- L41
- 发布
- 1987-11-01
- 实施
- 1987-11-20
