L42 半导体三极管 标准查询与下载

SJ/T 1486-2016 半导体分立器件 3CG180型硅ＰＮＰ高频高反压小功率晶体管详细规范

Semiconductor discrete device 3CG180 type silicon PNP high frequency high back voltage low power transistor detailed specification

SJ/T 1826-2016 半导体分立器件 3DK100型ＮＰＮ硅小功率开关晶体管详细规范

Semiconductor discrete device 3DK100 type NPN silicon low power switching transistor detailed specification

SJ/T 1834-2016 半导体分立器件 3DK104型ＮＰＮ硅小功率开关晶体管详细规范

Semiconductor discrete device 3DK104 type NPN silicon low power switching transistor detailed specification

SJ/T 1832-2016 半导体分立器件 3DK102型ＮＰＮ硅小功率开关晶体管详细规范

Semiconductor discrete device 3DK102 type NPN silicon low power switching transistor detailed specification

SJ/T 1838-2016 半导体分立器件 3DK29型ＮＰＮ硅小功率开关晶体管详细规范

Semiconductor discrete device 3DK29 type NPN silicon low power switching transistor detailed specification

SJ/T 1831-2016 半导体分立器件 3DK28型ＮＰＮ硅小功率开关晶体管详细规范

Semiconductor discrete device 3DK28 type NPN silicon low power switching transistor detailed specification

SJ/T 1830-2016 半导体分立器件 3DK101型ＮＰＮ硅小功率开关晶体管详细规范

Semiconductor discrete device 3DK101 type NPN silicon low power switching transistor detailed specification

SJ/T 1472-2016 半导体分立器件 3CG110型硅ＰＮＰ高频小功率晶体管详细规范

Semiconductor discrete device 3CG110 type silicon PNP high frequency low power transistor detailed specification

IEC 62860:2013 有机晶体管和材料特征描述试验方法

This standard describes a method for characterizing organic electronic devices@ including measurement techniques@ methods of reporting data@ and the testing conditions during characterization. Purpose The purpose of this standard is to provide a method for systematically characterizing organic transistors. These standards are intended to maximize reproducibility of published results by providing a framework for testing organic devices@ whose unique properties cause measurement issues not typically encountered with inorganic devices. This standard stresses disclosure of the procedures used to measure data and extract parameters so that data quality may be easily assessed. This standard also sets guidelines for reporting data@ so that information is clear and consistent throughout the research community and industry.

Test Methods for the Characterization of Organic Transistors and Materials

IEC 62860-1:2013 基于环形振荡器的有机晶体管特征描述试验方法

This standard describes a method for characterizing organic electronic transistor-based ring oscillators@ including measurement techniques@ methods of reporting data@ and the testing conditions during characterization. Purpose The purpose of this standard is to provide a method for systematically characterizing organic transistorbased ring oscillators. This standard is intended to maximize reproducibility of published results by providing a framework for testing organic ring oscillators@ whose unique properties cause measurement issues not typically encountered with inorganic-based circuitry. This standard stresses disclosure of the procedures used to measure data and extract parameters so that data quality may be easily assessed. This standard also sets guidelines for reporting data@ so that information is clear and consistent throughout the research community and industry.

Test Methods for the Characterization of Organic Transistor-Based Ring Oscillators

BS IEC 60747-8:2010 半导体装置.分立器件.场效应晶体管

Semiconductor devices. Discrete devices. Field-effect transistors

ASTM F996-11 利用次临界伏安特性测定由于氧化空穴和界面性能产生的电离辐射感生金属氧化物半导体场应晶体管临界电压偏移分量的标准试验方法

The electrical properties of gate and field oxides are altered by ionizing radiation. The method for determining the dose delivered by the source irradiation is discussed in Practices E666, E668, E1249, and Guide E1894. The time dependent and dose rate effects of the ionizing radiation can be determined by comparing pre- and post-irradiation voltage shifts, ΔVot and ΔVit. This test method provides a means for evaluation of the ionizing radiation response of MOSFETs and isolation parasitic MOSFETs. The measured voltage shifts, ΔVot and ΔVit, can provide a measure of the effectiveness of processing variations on the ionizing radiation response. This technique can be used to monitor the total-dose response of a process technology.1.1 This test method covers the use of the subthreshold charge separation technique for analysis of ionizing radiation degradation of a gate dielectric in a metal-oxide-semiconductor-field-effect transistor (MOSFET) and an isolation dielectric in a parasitic MOSFET. , , The subthreshold technique is used to separate the ionizing radiation-induced inversion voltage shift, ΔVINV into voltage shifts due to oxide trapped charge, ΔVot and interface traps, ΔVit. This technique uses the pre- and post-irradiation drain to source current versus gate voltage characteristics in the MOSFET subthreshold region. 1.2 Procedures are given for measuring the MOSFET subthreshold current-voltage characteristics and for the calculation of results. 1.3 The application of this test method requires the MOSFET to have a substrate (body) contact. 1.4 Both pre- and post-irradiation MOSFET subthreshold source or drain curves must follow an exponential dependence on gate voltage for a minimum of two decades of current. 1.5 The values stated in SI units are to be regarded as standard. No other units of measurement are included in this standard. 1.6 This standard does not purport to address all of the safety concerns, if any, associated with its use. It is the responsibility of the user of this standard to establish appropriate safety and health practices and determine the applicability of regulatory limitations prior to use.

Standard Test Method for Separating an Ionizing Radiation-Induced MOSFET Threshold Voltage Shift Into Components Due to Oxide Trapped Holes and Interface States Using the Subthreshold Current-Voltage Characteristics

BS EN 62416:2010 半导体器件.金属氧化物半导体(MOS)晶体管的热载流子试验

This standard describes the wafer level hot carrier test on NMOS and PMOS transistors. The test is intended to determine whether the single transistors in a certain (C)MOS process meet the required hot carrier lifetime.

Semiconductor devices - Hot carrier test on MOS transistors

ASTM F996-10 利用亚阈值安伏特性分离由于氧化空穴和界面态产生的电离辐射感应金属氧化物半导体场效应晶体管阈电压偏移的标准试验方法

The electrical properties of gate and field oxides are altered by ionizing radiation. The method for determining the dose delivered by the source irradiation is discussed in Practices E666, E668, E1249, and Guide E1894. The time dependent and dose rate effects of the ionizing radiation can be determined by comparing pre- and post-irradiation voltage shifts, ΔVot and ΔVit. This test method provides a means for evaluation of the ionizing radiation response of MOSFETs and isolation parasitic MOSFETs. The measured voltage shifts, ΔVot and ΔVit, can provide a measure of the effectiveness of processing variations on the ionizing radiation response. This technique can be used to monitor the total-dose response of a process technology.1.1 This test method covers the use of the subthreshold charge separation technique for analysis of ionizing radiation degradation of a gate dielectric in a metal-oxide-semiconductor-field-effect transistor (MOSFET) and an isolation dielectric in a parasitic MOSFET. , , The subthreshold technique is used to separate the ionizing radiation-induced inversion voltage shift, ΔVINV into voltage shifts due to oxide trapped charge, ΔVot and interface traps, ΔVit. This technique uses the pre- and post-irradiation drain to source current versus gate voltage characteristics in the MOSFET subthreshold region. 1.2 Procedures are given for measuring the MOSFET subthreshold current-voltage characteristics and for the calculation of results. 1.3 The application of this test method requires the MOSFET to have a substrate (body) contact. 1.4 Both pre- and post-irradiation MOSFET subthreshold source or drain curves must follow an exponential dependence on gate voltage for a minimum of two decades of current. 1.5 The values stated in SI units are to be regarded as standard. No other units of measurement are included in this standard. 1.6 This standard does not purport to address all of the safety concerns, if any, associated with its use. It is the responsibility of the user of this standard to establish appropriate safety and health practices and determine the applicability of regulatory limitations prior to use.

Standard Test Method for Separating an Ionizing Radiation-Induced MOSFET Threshold Voltage Shift Into Components Due to Oxide Trapped Holes and Interface States Using the Subthreshold Current-Voltage Characteristics

ANSI/IEEE 1620:2008 有机晶体管和材料特性的试验方法标准

This standard describes a method for characterizing organic electronic devices, including measurement techniques, methods of reporting data, and the testing conditions during characterization.

Standard for Test Methods for the Characterization of Organic Transistors and Materials

BS IEC 60747-9:2007 半导体装置.分立器件.绝缘栅双极晶体管(IGBTs)

This part of IEC 60747 gives product specific standards for terminology，letter symbols， essential ratings and characteristics，verification of ratings and methods of measurement for insulated—gate bipolar transistors(IGBTs)．

Semiconductor devices - Discrete devices - Insulated-gate bipolar transistors (IGBTs)

DIN EN 62373:2007 金属氧化半导体场效应晶体管(MOSFET)的基本温度稳定性试验

This International Standard provides a test procedure for a bias-temperature (BT) stability test of metal-oxide semiconductor, field-effect transistors (MOSFET).#,,#

Bias-temperature stability test for metal-oxide, semiconductor, field-effect transistors (MOSFET) (IEC 62373:2006); German version EN 62373:2006

ANSI/IEEE 1620.1:2006 表征基于环形振荡器的有机电晶体管特性的试验方法标准

Recommended methods and standardized reporting practices for electrical characterization of printed and organic ring oscillators are covered. Describes the most common sources of measurement errors, particularly for high-impedance electrical measurements commonly required for printed and organic ring oscillators. Also gives recommended practices in order to minimize and/or characterize the effect of measurement artifacts and other sources of error encountered while measuring printed and organic ring oscillators.

Standard for Test Methods for the Characterization of Organic Transistor-Based Ring Oscillators

IEC 62373:2006 金属氧化物半导体场效应管(MOSFET)的基本温度稳定性试验

This International Standard provides a test procedure for a bias-temperature (BT) stability test of metal-oxide semiconductor, field-effect transistors (MOSFET).

Bias-temperature stability test for metal-oxide, semiconductor, field-effect transistors (MOSFET)

IEC 60747-6:2000 半导体装置.第6部分:三极管

This part of IEC 60747 provides standards for the following categories of discrete semiconductor devices: - (reverse-blocking) (triode) thyristors, - asymmetrical (reverse-blocking) (triode) thyristors, - reverse-conducting (triode) thyristors, - bidirectional triode thyristors (triacs), - gate turn-off thyristors (GTO thyristors). It does not apply to thyristor surge suppressors nor to diacs.

Semiconductor devices - Part 6: Thyristors