L43 半导体整流器件 标准查询与下载
共找到 176 条与 半导体整流器件 相关的标准，共 12 页
Semiconductor discrete device.Detail specification for silicon swicth-rectifier diode for type 2CZ73
- ICS
- 29.200
- CCS
- L43
- 发布
- 1994-09-30
- 实施
- 1994-12-01
Semiconductor discrete device.Detail specification for silicon swicth-rectifier diode for type 2CZ74
- ICS
- 29.200
- CCS
- L43
- 发布
- 1994-09-30
- 实施
- 1994-12-01
Semiconductor discrete device.Detail specification for type QL73 silicon three phase full wave bridge rectifier
- ICS
- 29.200
- CCS
- L43
- 发布
- 1994-09-30
- 实施
- 1994-12-01
Semiconductor discrete device.Detail specification for type 2CZ106 silicon switching rectifier diode
- ICS
- 29.200
- CCS
- L43
- 发布
- 1994-09-30
- 实施
- 1994-12-01
Semiconductor discrete device.Detail specification for silicon switch-rectifier diode for type 2CZ75
- ICS
- 29.200
- CCS
- L43
- 发布
- 1994-09-30
- 实施
- 1994-12-01
Semiconductor convertors; general requirements and line-commutated convertors; part 1-3: transformers and reactors (IEC 60146-1-3:1991); German version EN 60146-1-3:1993
- ICS
- 29.180
- CCS
- L43
- 发布
- 1994-03
- 实施
本标准规定了机车半导体变流装置(以下简称变流装置)的技术要求、试验方法、验收规则等。 本标准适用于铁道电力机车、电动车组的牵引、制动用变流装置，以及电传动内嫉机车牵引用的整流装置。原则上也适用于这些机车上供电给辅助设备的变流装置。该装置由半导体整流二极管、反向阻断三极晶闸管和它们的脉冲触发部分(从脉冲变压器至晶闸管门极).以及其他附件所组成。 本标准仅对机车半导体变流装置共性部分提出要求，各种装置在产品技术条件中可根据其自身的特点，作出具体的规定。 本标准不适用于换相电压由内部电源供电的变流器、变频器和斩波器。
Specifications for locomotive semi-conductor converters
- ICS
- CCS
- L43
- 发布
- 1993-11-11
- 实施
- 1994-07-01
Defines, in compliance with the IEC Quality Assessment System for Electronic Components, information to be given for: mechanical description, short description, categories of assessed quality, limiting values, electrical characteristics, marking, orderin
Semiconductor devices; discrete devices; part 6: thyristors: section 3: blank detail specification for reverse blocking triode thyristors, ambient and case-rated, for currents greater than 100 A
- ICS
- 31.240
- CCS
- L43
- 发布
- 1993-11
- 实施
Semiconductor devices; discrete devices and integrated circuits; part 2: rectifier diodes; amendment 2
- ICS
- 31.080.10
- CCS
- L43
- 发布
- 1993-10
- 实施
Replaces the titles of chapter II (now: Variable capacitance diodes, snap-off diodes and fast-switching Schottky diodes) and section two (now: Snap-off diodes, Schottky diodes), adds subclause 4.3 (including 4.3.1 to 4.3.6) to chapter II, clauses 1 to 4
Semiconductor devices; discrete devices; part 4: microwave diodes and transistors; amendment 1
- ICS
- 31.080.10;31.080.30
- CCS
- L43
- 发布
- 1993-10
- 实施
Defines, in compliance with the IEC Quality Assessment System for Electronic Components, information to be given for: mechanical description, short description, categories of assessed quality, limiting values, electrical characteristics, marking, orderin
Semiconductor devices; discrete devices; part 2: rectifier diodes; section 2: blank detail specification for rectifier diodes (including avalanche rectifier diodes), ambient and case-rated, for currents greater than 100 A
- ICS
- 31.080.10
- CCS
- L43
- 发布
- 1993-09
- 实施
This Part 1-3 of the International Standard relates, in general, to those characteristics wherein converter transformers differ from ordinary power transformers. In all other respects, the rules specified in IEC 76 shall apply to convenor transformers also, as far as they are not in contradiction with this standard. It should be borne in mind that a rectifier transformer operates with non-sinusoidal current waveshape. In single-way connection, the current in each cell winding contains a d.c. component which calls for special attention in design and testing. In some cases, a special design is necessary when external short-circuits and cell failures would cause abnormal stress. For certain types of transformers, the waveshape of the normal operating voltage is non-sinusoidal. The core loss of such equipment is to be determined by applying a sinu-soidal voltage having the same half-cycle arithmetic mean value and the same fundamental frequency as the voltage applied in service.
Semiconductor convertors. General requirements and line commutated convertors. Transformers and reactors
- ICS
- 29.180
- CCS
- L43
- 发布
- 1993-05-15
- 实施
- 1993-05-15
Blank detail specification: case-rated rectifier diodes
- ICS
- CCS
- L43
- 发布
- 1992-12
- 实施
Blank detail specification: ambient-rated rectifier diodes
- ICS
- CCS
- L43
- 发布
- 1992-12
- 实施
Semiconductor discrete device.Detail specification for silicon rectifier diodes for types 2CZ5550 through 2CZ5554
- ICS
- 29.200
- CCS
- L43
- 发布
- 1992-11-19
- 实施
- 1993-05-01
Semiconductor discrete device.Detail specification for reverse-blocking thyristor for type 3CT103
- ICS
- 31.080.20
- CCS
- L43
- 发布
- 1992-11-19
- 实施
- 1993-05-01
Semiconductor discrete device.Detail specification for reverse-blocking thyristor for type 3CT105
- ICS
- 31.080.20
- CCS
- L43
- 发布
- 1992-11-19
- 实施
- 1993-05-01
Semiconductor discrete device.Detail specification for reverse-blocking thyristor for type 3CT107
- ICS
- 31.080.20
- CCS
- L43
- 发布
- 1992-11-19
- 实施
- 1993-05-01
Semiconductor discrete device.Detail specification for reverse-blocking thyristor for types 3CT682,683,685～692 and 3CT5206
- ICS
- 31.080.20
- CCS
- L43
- 发布
- 1992-11-19
- 实施
- 1993-05-01
Semiconductor discrete device.Detail specification for type QL71 Silicon single phase full wave bridge rectifier
- ICS
- 29.200
- CCS
- L43
- 发布
- 1992-11-19
- 实施
- 1993-05-01
