L43 半导体整流器件 标准查询与下载
共找到 176 条与 半导体整流器件 相关的标准，共 12 页
The present publication gives standards for the following categories or sub-categories of devices. Rectifier diodes, including: - avalanche rectifier diodes; - controlled-avalanche rectifier diodes; - fast-switching rectifier diodes.
Semiconductor devices - Discrete devices and integrated circuits - Part 2: Rectifier diodes
- ICS
- 31.080.10
- CCS
- L43
- 发布
- 2000-03
- 实施
- 2016-04-15
This part of IEC 60146 applies to all types of semiconductor converters of the self-commutated type including power converters which contain at least one part of a self-commutated type, for example a.c. converters, indirect d.c. converters, direct d.c. converters. The requirements of IEC 60146-1-1 apply also to self-commutated converters as far as they are not in contradiction with this standard. For some special applications, for example, uninterruptible power systems, variable speed a.c. and d.c. drives and electric traction equipment, additional standards may apply. NOTE Test restrictions may apply to special applications, for example high-power reactive power converters.
Semiconductor converters - Part 2: Self-commutated semiconductor converters including direct d.c. converters
- ICS
- 29.200
- CCS
- L43
- 发布
- 1999-11
- 实施
- 1999-11-24
This standard applies to thyristor valves with metal oxide surge arresters directly connected between the valve terminals, for use in a line commutated converter for high voltage d.c. power transmission or as part of a back-to-back link. It is restricted to electrical type and production tests. The tests specified in this standard are based on air insulated valves. For other types of valves, the test requirements and acceptance criteria must be agreed.
Thyristor valves for high voltage direct current (HVDC) power transmission — Part 1: Electrical testing
- ICS
- 31.080.20
- CCS
- L43
- 发布
- 1999-02-15
- 实施
- 1999-02-15
Semiconductor discrete devices.Detail specification for type 2CZ10 silicon switching rectifier diode
- ICS
- 29.200
- CCS
- L43
- 发布
- 1997-06-17
- 实施
- 1997-10-01
Semiconductor discrete devices.Detail specification for type 2DK13 SCHOTTKY ailicon switching rectifier diode
- ICS
- 31.080
- CCS
- L43
- 发布
- 1997-06-17
- 实施
- 1997-10-01
Semiconductor discrete devices.Detail specification for type 2DK15 SCHOTTKY silicon switching rectifier diode
- ICS
- 29.200
- CCS
- L43
- 发布
- 1997-06-17
- 实施
- 1997-10-01
Semiconductor discrete devices Detail specification for type 2DK14 SCHOTTKY silicon switching rectifier diode
- ICS
- 29.200
- CCS
- L43
- 发布
- 1997-06-17
- 实施
- 1997-10-01
This standard describes the measurement of signal diode (IF 5500 mA dc) reverse recovery times of less than 300 ns duration. It may, however, also be used for the measurement of longer recovery times.
Measurement of Reverse Recovery Time for Semiconductor Signal Diodes [Replaced: JEDEC 318-1]
- ICS
- 31.080.20
- CCS
- L43
- 发布
- 1996-07-01
- 实施
This standard is Semiconductor convertors - General requirements and line commutated convertors - Part 1-1: Specifications of basic requirements; Amendment 1.
Semiconductor convertors - General requirements and line commutated convertors - Part 1-1: Specifications of basic requirements; Amendment 1
- ICS
- 29.200
- CCS
- L43
- 发布
- 1996-07
- 实施
Applies to two or three terminal, four or five layer, thyristor surge protection devices (SPDs) for application on systems with voltages equal to or less than 1000 V rms or 1200 V dc.
Test specification for thyristor diode surge protective devices
- ICS
- 31.080.10;31.080.20
- CCS
- L43
- 发布
- 1996
- 实施
Contains information and recommendations for the type testing of thyristor valves for high-voltage direct-current (HVDC) power transmission systems.
Recommended Practice for Test Procedures for High-Voltage Direct- Current Thyristor Valves
- ICS
- 29.200
- CCS
- L43
- 发布
- 1996
- 实施
Semiconductor discrete device.Detail specification for type QL74 silicon single phase bridge rectifier
- ICS
- 29.200
- CCS
- L43
- 发布
- 1995-05-25
- 实施
- 1995-12-01
本标准规定了由反向阻断三级晶闸管管芯组成的臂对模块、单相桥模块、三相桥模块、反并联臂对模块以及其它电联结构成的模块的通用测试方法。 本标准适用于5A以上(包括5A)的晶闸管臂对模块、单相桥模块、三相桥模块、反并联臂对模块及其它晶闸管模块，由晶闸管组成的相应组件亦可参照使用。
Test method for thyristor modules Pair of arms and anti-parallel pair of arms
- ICS
- 31.080.20
- CCS
- L43
- 发布
- 1994-12-09
- 实施
- 1995-06-01
Semiconductor discrete device.Detail specification for silicon rectifier diode for type 2CZ101
- ICS
- 29.200
- CCS
- L43
- 发布
- 1994-09-30
- 实施
- 1994-12-01
Semiconductor discrete device.Detail specification for silicon switch-rectifier diode for type 2CZ75
- ICS
- 29.200
- CCS
- L43
- 发布
- 1994-09-30
- 实施
- 1994-12-01
Semiconductor discrete device.Detail specification for type 2CZ117 silicon rectifier diode
- ICS
- 29.200
- CCS
- L43
- 发布
- 1994-09-30
- 实施
- 1994-12-01
Semiconductor discrete device.Detail specification for type QL73 silicon three phase full wave bridge rectifier
- ICS
- 29.200
- CCS
- L43
- 发布
- 1994-09-30
- 实施
- 1994-12-01
Semiconductor discrete device.Detail specification for silicon swicth-rectifier diode for type 2CZ74
- ICS
- 29.200
- CCS
- L43
- 发布
- 1994-09-30
- 实施
- 1994-12-01
Semiconductor discrete device Detail specification for type 2CW1001～2CW1005 silicon voltage-regulator diode
- ICS
- 29.200
- CCS
- L43
- 发布
- 1994-09-30
- 实施
- 1994-12-01
Semiconductor discrete device.Detail specification for silicon swicth-rectifier diode for type 2CZ73
- ICS
- 29.200
- CCS
- L43
- 发布
- 1994-09-30
- 实施
- 1994-12-01
