L43 半导体整流器件 标准查询与下载



共找到 176 条与 半导体整流器件 相关的标准,共 12

Semiconductor discrete device.Detail specification for type QL72 silicon three phase full wave bridge rectifier

ICS
29.200
CCS
L43
发布
1992-11-19
实施
1993-05-01

Semiconductor discrete device.Detail specification for type 2CL3 silicon high voltage rectifier stack

ICS
29.200
CCS
L43
发布
1992-11-19
实施
1993-05-01

Semiconductor discrete device.Detail specification for type 2CZ30 silicon rectifier diode

ICS
29.200
CCS
L43
发布
1992-11-19
实施
1993-05-01

Semiconductor convertors; general requirements and line commutated convertors; part 1-3: transformers and reactors (IEC 146-1-3:1991)

ICS
CCS
L43
发布
1992-04
实施

Semiconductor power convertors; adjustable speed electric drive systems; general requirements; part 1: rating specifications, particularly for d.c. motor drives

ICS
29.200
CCS
L43
发布
1992-04
实施
2003-04-14

Harmonized system of quality assessment for electronic components. Blank detail specification: case-rated rectifier diodes

ICS
CCS
L43
发布
1992-02-28
实施

Harmonized system of quality assessment for electronic components. Blank detail specification: ambient-rated rectifier diodes

ICS
CCS
L43
发布
1992-02-28
实施

Semiconductor devices; discrete devices and integrated circuits; part 2: rectifier diodes; amendment 1

ICS
31.080.10
CCS
L43
发布
1992-02
实施

Prezentul standard se refer? la furtunul din cauciuc prev?zut cu arm?turi metalice, folosit pentru sistemul de fr?nare hidraulic al autovehiculelor rutiere cu presiunea de regim 15 MPa (150 bar) ?i denumit prescurtat, ?n cuprinsul standardului, furtun.

Hydraulic flexible brake hose for road vehicles. general technical requirements for quality

ICS
CCS
L43
发布
1991-06-01
实施

Defines quality assessment procedures in such a manner that electronic components are acceptable in all other participating countries without the need for further testing. Refers to IEC 747-10/QC 700000 and IEC 747-11/QC 750000.

Semiconductor devices; discrete devices; part 6: thyristors; section 2: blank detail specification for bidirectional triode thyristors (triacs), ambient or case, up to 100 A

ICS
31.240
CCS
L43
发布
1991-05
实施
2007-07-27

Relates, in general, to those characteristics wherein convertor transformers differ from ordinary power transformers. Includes tests, corrections to be applied when cooling medium temperature is higher than standard, temperature rise limits and calucalti

Semiconductor convertors; general requirements and line commutated convertors; part 1-3: transformers and reactors

ICS
29.200
CCS
L43
发布
1991-03
实施

Establishes basic terms and definitions. Specifies service conditions, which influence the basis of rating, test requirements for complete convertor equipment and assemblies, and basic performance requirements. Gives application oriented requirements.

Semiconductor convertors; general requirements and line commutated convertors; part 1-1: specifications of basic requirements

ICS
29.200
CCS
L43
发布
1991-03
实施
2009-07-07

Covers primarily line commutated convertors and is not in itself a specification, except as regards certain auxiliary components, in so far as existing standards may not provide the necessary data.

Semiconductor convertors; general requirements and line commutated convertors; part 1-2: application guide

ICS
29.200
CCS
L43
发布
1991-03
实施

Guide for test procedures for HVDC thyristor valves

ICS
29.200
CCS
L43
发布
1990
实施

The blank detail specification described is one of a series of blank detail specifications, and shall be used in conjunction with the following Publications: IEC 747-10 and IEC 747-11.

Semiconductor devices; discrete devices; part 6: thyristors; section one: blank detail specification for reverse blocking triode thyristors, ambient and case-rated, up to 100 A

ICS
31.240
CCS
L43
发布
1989-04
实施
2007-07-27

The blank detail specification described includes mechanical description, categories of assessed quality, limiting values, electrical characteristics, marking, ordering information, test conditions and inspection requirements.

Semiconductor devices; discrete devices; part 2: rectifier diodes; section one: blank detail specification for rectifier diodes (including avalanche rectifier diodes), ambient and case-rated, up to 100 A

ICS
31.080.10
CCS
L43
发布
1989-04
实施
2007-07-27

Detail specification for glass passivation package high voltage silicon rectifier stacks,Type 2CZ21~29

ICS
31.080.99
CCS
L43
发布
1987-02-10
实施
1987-10-01

Detail specification for plastic package high voltage silicon rectifier stacks,Type 2CZ70~77 and 2CL79

ICS
31.080.99
CCS
L43
发布
1987-02-10
实施
1987-10-01

This Standard gives the system for numbering like-named electrodes or terminal functions in serniconductor devices and for assigning numerical designations to units of multiple-unit semiconductor devices. It applies to both integrated circuits and discrete devices.

Numbering of Like-Named Terminal Functions in Semiconductor Devices and Designation of Units in Multiple-Unit Semiconductor Devices

ICS
31.080.20
CCS
L43
发布
1987-02-01
实施

This Standard details the r u l e s to be followed I f color coding is used to I d e n t I f y JEDEC-assigned t y p e numbers or f o r c a t h o d e I d e n t I f I c a t I o n of discrete semiconductor d e v I c e s .

Color Coding of Discrete Semiconductor Devices

ICS
31.080.20
CCS
L43
发布
1986-03-01
实施



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