L43 半导体整流器件 标准查询与下载

SJ 1795-1981 50～1000mA小电流半导体闸流管（暂行）

Detail specification for 50-1000mA low current thyristors

SJ 1784-1981 QL1～9和QL21～28硅单相桥式整流器

Detail specification for silicon single phase bridge rectifiers,Type QL1-9 and QL21-28

SJ 1790-1981 5A以下硅单相桥式整流器.电流过载倍数的测试方法

Method of measurement for overload current multiplication factor of silicon single phase bridge rectifiers,up to 5A

SJ 1488-1979 反向阻断型高频半导体闸流管额定高频通态平均电流IT的测试方法

Method of measurement for rated high-frequency on-state mean current Ir of reverse blocking high-frequency thyristors

SJ 1487-1979 反向阻断型高频半导体闸流管

Detail specification for reverse blocking high-frequency thyristors

JEDEC JESD419A-1980 半导体设备规范和注册格式中用到的数值标准列表.EIA RS-419-A 前RS-419的修订本

Standard List of Values to be Used in Semiconductor Device Specifications and Registration Formats Revision of EIA RS-419-A formerly RS-419)

Standard List of Values to be Used in Semiconductor Device Specifications and Registration Formats Revision of EIA RS-419-A formerly RS-419) [Replaced: JEDEC EIA-419-A]

SJ 1130-1977 2DL51～56、2CL51～56型硅高压整流堆（暂行）

Detail specification for high-voltage silicon rectifier stacks,Type 2DL51~56 and 2CL51~56

BS 9300 C476:1973 硅雪崩整流器二极管详细规范

This specification covers the detail requirements for a Silicon Avalenche Rectifier Diode and is in accordance with, K1007. Issue 3. except as otherwise stated.

Detail specification for silicon avalanche rectifier diode

IEEE 444-1973 半导体闸流管换流器与电动机驱动器实用规程与要求-第1部分:直流电动机电枢电源换流器

Practices and requirements for thyristor converters and motor drives; part 1: converters for dc motor armature supplies

BS 9300 C379-388:1971 安装于硅螺杆上的大功率整流器二极管详细规范

This specification covers the detail requirements for a Silicon, Stud Mounted, Power Rectifier Diode and is in accordance with Specification K1007, Issue 3 except as otherwise stated.

Detail specifications for silicon stud mounted, power rectifier diodes

JEDEC JEB15-1969 双稳半导体微电路测量的术语和方法

This format is intended f o r the registration of semiconductor integrated bistable logic circ-dta including .monolithic, multichip, fihl 0 and hybrid bistable circuits,

Terminology and Methods of Measurement for Bistable Semiconductor Microcircuits

JEDEC JEP78-1969 半导体红外线探测仪的相对频谱响应曲线

The shaded areas of the following S-curves indicate the range of spectral shapes which may be expeicft ead particular type photodetector is obtained from several different manufacturerIst. should be noted that the spectral responsoef some types of photodetectors (particularly the lead-salt and intrinsic silicon detectors) can be varied during the manufacturing process. The curves shown here are representative of the more common, or "typical," detector types.

Relative Spectral Response Curves for Semiconductor Infrared Detectors

JEDEC EIA-323-1966 半导体器件同名终端功能的编号和多单元半导体器件的单元命名

This standard is applicable to life testing of lead-mounted semiconductor devices intended for applications in a Natural-Air-Cooled environment where most (> 90%) of the power dissipation is obtained by convection and radiation losses from the body of the device.

Air-Convection-Cooled Life Test Environment for Lead-Mounted Semiconductor Devices

JIS C 7232:1978 有可靠性保证的反向阻断型三极晶体闸流管(中、大电流)

Reliability assured reverse blocking triode thyristors (high and medium current)

JIS C 7231:1978 有可靠性保证的反向阻断器三极晶体闸流管(小电流)

Reliability assured reverse blocking triode thyristors (low current)

JIS C 7051:1974 反向阻断型三极晶体闸流管的试验方法

Testing methods for reverse blocking triode thyristors

SJ 2728-1986 2CZ314型硅中速开关整流二极管详细规范

Detail specification for silicon medium speed switching rectifier diodes,Type 2CZ314

SJ 2720-1986 2CZ304型硅中速开关整流二极管详细规范

Detail specification for silicon medium speed switching recitifier diodes,Type 2CZ304

SJ 2722-1986 2CZ306型硅块开关整流二极管详细规范

Detail specification for silicon high speed switching rectifier diodes,Type 2CZ306

SJ 2723-1986 2CZ307型硅快开关整流二极管详细规范

Detail specification for silicon high speed switching rectifier diodes,Type 2CZ307