DIN 50454-1-2000 半导体工艺材料的检验.Ⅲ-Ⅴ化合物单晶体错位的测定.第1部分:砷化镓
Testing of materials for semiconductor technology - Determination of dislocations in monocrystals of III-V-compound semi-conductors - Part 1: Gallium arsenide
The standard specifies a method for the revelation of dislocations in monocrystals, bar-shaped of gallium arsenide specimens with polished, polished-etched, or sawed surfaceoriented in (111)-Ga and (100) crystal planes using structure etching and the determiantion of the density on the surface and the local distrubution of these dislocations.#,,#