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Semiconductor catalysis?

Semiconductor catalysis?, Total:500 items.

In the international standard classification, Semiconductor catalysis? involves: Surface treatment and coating, Ceramics, Semiconductor devices, Integrated circuits. Microelectronics, Graphical symbols, Technical drawings, Mechanical structures for electronic equipment, Semiconducting materials, Electronic components in general, Rectifiers. Convertors. Stabilized power supply, Conducting materials, Electromechanical components for electronic and telecommunications equipment, Printed circuits and boards, Insulating fluids, Electrical and electronic testing, Valves, Electrical engineering in general, Fibre optic communications, Electricity. Magnetism. Electrical and magnetic measurements, Materials for aerospace construction.

Association Francaise de Normalisation, Semiconductor catalysis?

• XP CEN/TS 16599:2014 Photocatalyse - Détermination des conditions d'irradiation pour tester les propriétés photocatalytiques de matériaux semi-conducteurs
• XP B44-014*XP CEN/TS 16599:2014 Photocatalysis - Irradiation conditions for testing photocatalytic properties of semiconducting materials and the measurement of these conditions
• NF ISO 10677:2011 Céramiques techniques - Sources lumineuses UV destinée aux essais des matériaux photocatalytiques semi-conducteurs
• NF ISO 14605:2013 Céramiques techniques - Sources lumineuses destinées aux essais des matériaux photocatalytiques semi-conducteurs dans un environnement d'éclairage intérieur
• NF ISO 22197-4:2021 Céramiques techniques - Méthodes d'essai relatives à la performance des matériaux photocatalytiques semi-conducteurs pour la purification de l'air - Partie 4 : élimination du formaldéhyde
• NF B44-103*NF ISO 10677:2011 Fine ceramics (advanced ceramics, advanced technical ceramics) - Ultraviolet light source for testing semiconducting photocatalytic materials
• NF ISO 22197-5:2021 Céramiques techniques - Méthodes d'essai relatives à la performance des matériaux photocatalytiques semi-conducteurs pour la purification de l'air - Partie 5 : élimination du mercaptan méthylique
• NF C80-203*NF EN 62417:2010 Semiconductor devices - Mobile ion tests for metal-oxide semiconductor field effect transistors (MOSFETs).
• NF EN 62417:2010 Dispositifs à semiconducteurs - Essais d'ions mobiles pour transistors à semiconducteur à oxyde métallique à effet de champ (MOSFET)
• NF EN IEC 63364-1:2023 Dispositifs à semiconducteurs - Dispositifs à semiconducteurs pour système IDO - Partie 1 : méthode d'essai de détection de variation acoustique
• NF C80-204*NF EN 62418:2011 Semiconductor devices - Metallization stress void test
• NF EN 62418:2011 Dispositifs à semi-conducteurs - Essai sur les cavités dues aux contraintes de la métallisation
• NF B44-101-4:2013 Fine ceramics (advanced ceramics, advanced technical ceramics) - Test method for air-purification performance of semiconducting photocatalytic materials - Part 4: removal of formaldehyde
• NF B44-105*NF ISO 14605:2013 Fine Ceramics (advanced ceramics, advanced technical ceramics) - Light source for testing semiconducting photocatalytic materials used under indoor lighting environment
• NF EN 60191-4/A1:2018 Normalisation mécanique des dispositifs à semiconducteurs - Partie 4 : système de codification et classification en formes des structures des boîtiers pour dispositifs à semiconducteurs
• NF EN 60191-4:2014 Normalisation mécanique des dispositifs à semiconducteurs - Partie 4 : système de codification et classification en formes des structures des boîtiers pour dispositifs à semiconducteurs
• NF B44-101-5:2013 Fine ceramics (advanced ceramics, advanced technical ceramics) - Test method for air-purification performance of semiconducting photocatalytic materials - Part 5: removal of methyl mercaptan
• NF B44-101-5*NF ISO 22197-5:2021 Fine ceramics (advanced ceramics, advanced technical ceramics) - Test method for air-purification performance of semiconducting photocatalytic materials - Part 5 : removal of methyl mercaptan
• NF B44-101-4*NF ISO 22197-4:2021 Fine ceramics (advanced ceramics, advanced technical ceramics) - Test method for air-purification performance of semiconducting photocatalytic materials - Part 4 : removal of formaldehyde
• NF C96-013-4/A2*NF EN 60191-4/A2:2003 Mechanical standardization of semiconductor devices - Part 4 : coding system and classification into forms of package outlines for semiconductor device packages.
• NF C96-013-4*NF EN 60191-4:2014 Mechanical standardization of semiconductor devices - Part 4 : coding system and classification into forms of package outlines for semiconductor device packages
• NF EN 60191-6:2011 Normalisation mécanique des dispositifs à semiconducteurs - Partie 6 : règles générales pour la préparation des dessins d'encombrement des boîtiers pour dispositifs à semiconducteurs pour montage en surface
• NF C96-013-4*NF EN 60191-4:2000 Mechanical standardization of semiconductor devices - Part 4 : coding system and classification into forms of package outlines for semiconductor device packages.
• NF C96-013-4/A1*NF EN 60191-4/A1:2002 Mechanical standardization of semiconductor devices - Part 4 : coding system and classification into forms of package outlines for semiconductor device packages.
• NF ISO 18560-1:2014 Céramiques techniques - Méthode d'essai pour mesurer les performances des matériaux photocatalytiques semiconducteurs pour purifier l'air selon la méthode de la chambre d'essai dans un environnement d'éclairage intérieur - Partie 1 : élimina...
• NF C96-013-6:2005 Mechanical standardization of semiconductor devices - Part 6 : general rules for the preparation of outline drawings of surface mounted semiconductor device packages.
• NF C96-013-4/A1*NF EN 60191-4/A1:2018 Mechanical standardization of semiconductor devices - Part 4 : coding system and classification into forms of package outlines for semiconductor device packages
• NF C96-013-6-16*NF EN 60191-6-16:2013 Mechanical standardization of semiconductor devices - Part 6-16 : glossary of semiconductor test and burn-in sockets for BGA, LGA, FBGA and FLGA
• NF C96-013-6-10*NF EN 60191-6-10:2004 Mechanical standardization of semiconductor devices - Part 6-10 : general rules for the preparation of outline drawings of surface mounted semiconductor device packages - Dimensions of P-VSON
• NF EN 60191-6-6:2002 Normalisation mécanique des dispositifs à semiconducteurs - Partie 6-6 : règles générales pour la préparation des dessins d'encombrement des dispositifs à semiconducteurs pour montage en surface - Guide de conception des dispositifs FLGA
• NF EN 60191-6-12:2012 Normalisation mécanique des dispositifs à semiconducteurs - Partie 6-12 : règles générales pour la préparation des dessins d'encombrement des boîtiers des dispositifs à semiconducteurs à montage en surface - Lignes drectrices de conception po...
• NF EN 60191-6-10:2004 Normalisation mécanique des dispositifs à semiconducteurs - Partie 6-10 : règles générales pour la préparation des dessins d'encombrement des dispositifs à semiconducteurs pour montage en surface - Dimensions des boîtiers P-VSON
• NF C96-051*NF EN 62373:2006 Bias-temperature stability test for metal-oxide, semiconductor, field-effect transistors (MOSFET)
• NF EN 62373:2006 Essai de stabilité de température en polarisation pour transistors à effet de champ métal-oxyde-semiconducteur (MOSFET)
• NF EN 60191-6-22:2013 Normalisation mécanique des dispositifs à semiconducteurs - Partie 6-22 : règles générales pour la préparation des dessins d'encombrement des dispositifs à semiconducteurs à montage en surface - Guide de conception pour les boîtiers matriciel...
• NF EN 60191-6-1:2002 Normalisation mécanique des dispositifs à semiconducteurs - Partie 6-1 : règles générales pour la préparation des dessins d'encombrement des dispositifs à semiconducteurs pour montage en surface - Guide de conception pour les boîtiers à broch...
• NF EN 60191-6-21:2011 Normalisation mécanique des dispositifs à semiconducteurs - Partie 6-21 : règles générales pour la préparation des dessins d'encombrement des boîtiers pour dispositifs à semiconducteurs pour montage en surface - Méthodes de mesure pour les di...
• NF EN 60191-6-2:2002 Normalisation mécanique des dispositifs à semiconducteurs - Partie 6-2 : règles générales pour la préparation des dessins d'encombrement des dispositifs à semiconducteurs pour montage en surface - Guide de conception pour les boîtiers à broch...
• NF EN 60191-6-20:2011 Normalisation mécanique des dispositifs à semiconducteurs - Partie 6-20 : règles générales pour la préparation des dessins d'encombrement des boîtiers pour dispositifs à semiconducteurs pour montage en surface - Méthodes de mesure pour les di...
• NF EN 60191-6-17:2012 Normalisation mécanique des dispositifs à semiconducteurs - Partie 6-17 : règles générales pour la préparation des dessins d'encombrement des dispositifs à semiconducteurs à montage en surface - Guide de conception pour les boîtiers empilés ...
• NF EN 60191-6-5:2002 Normalisation mécanique des dispositifs à semiconducteurs - Partie 6-5 : règles générales pour la préparation des dessins d'encombrement des dispositifs à semiconducteurs à montage en surface - Guide de conception pour les boîtiers matriciels...
• NF EN 60191-6-18:2010 Normalisation mécanique des dispositifs à semiconducteurs - Partie 6-18 : règles générales pour la préparation des dessins d'encombrement des dispositifs à semiconducteurs pour montage en surface - Guide de conception pour les boîtiers matrici...
• NF EN 60191-6-4:2003 Normalisation mécanique des dispositifs à semiconducteurs - Partie 6-4 : règles générales pour la préparation des dessins d'encombrement des dispositifs à semiconducteurs à montage en surface - Méthodes de mesure pour les dimensions des boît...
• NF C96-013-6-18*NF EN 60191-6-18:2010 Mechanical standardization of semiconductor devices - Part 6-18 : general rules for the preparation of outline drawings of surface mounted semiconductor device packages - Design guide for ball grid array (BGA)
• NF EN 60191-6-8:2002 Normalisation mécanique des dispositifs à semiconducteurs - Partie 6-8 : règles générales pour la préparation des dessins d'encombrement des dispositifs à semiconducteurs à montage en surface - Guide de conception pour les boîtiers plats quad...
• NF EN 60191-6-3:2001 Normalisation mécanique des dispositifs à semiconducteurs - Partie 6-3 : règles générales pour la préparation des dessins d'encombrement des dispositifs à semiconducteurs à montage en surface - Méthodes de mesure pour les boîtiers plats quad...

European Committee for Standardization (CEN), Semiconductor catalysis?

• PD CEN/TS 16599:2014 Photocatalysis - Irradiation conditions for testing photocatalytic properties of semiconducting materials and the measurement of these conditions
• CEN/TS 16599:2014 Photocatalysis - Irradiation conditions for testing photocatalytic properties of semiconducting materials and the measurement of these conditions

British Standards Institution (BSI), Semiconductor catalysis?

• BS PD CEN/TS 16599:2014 Photocatalysis. Irradiation conditions for testing photocatalytic properties of semiconducting materials and the measurement of these conditions
• BS ISO 19722:2017 Fine ceramics (advanced ceramics, advanced technical ceramics). Test method for determination of photocatalytic activity on semiconducting photocatalytic materials by dissolved oxygen consumption
• PD IEC/TR 63133:2017 Semiconductor devices. Scan based ageing level estimation for semiconductor devices
• BS EN 62416:2010 Semiconductor devices - Hot carrier test on MOS transistors
• BS ISO 10677:2011 Fine ceramics (advanced ceramics, advanced technical ceramics). Ultraviolet light source for testing semiconducting photocatalytic materials
• PD IEC TR 63378-1:2021 Thermal standardization on semiconductor packages. Thermal resistance and thermal parameter of BGA, QFP type semiconductor packages
• BS IEC 60747-8-4:2004 Discrete semiconductor devices - Metal-oxide semiconductor field-effect transistors (MOSFETs) for power switching applications
• BS ISO 13125:2013 Fine ceramics (advanced ceramics, advanced technical ceramics). Test method for antifungal activity of semiconducting photocatalytic materials
• BS ISO 19635:2016 Fine ceramics (advanced ceramics, advanced technical ceramics). Test method for antialgal activity of semiconducting photocatalytic materials
• BS 3934-1:1992 Mechanical standardization of semiconductor devices - Recommendations for the preparation of drawings of semiconductor devices
• BS EN IEC 63364-1:2022 Semiconductor devices. Semiconductor devices for IoT system - Test method of sound variation detection
• BS ISO 22197-2:2019 Fine ceramics (advanced ceramics, advanced technical ceramics). Test method for air-purification performance of semiconducting photocatalytic materials - Removal of acetaldehyde
• BS IEC 60191-2:1966+A21:2020 Mechanical standardization of semiconductor devices. Dimensions
• 13/30264600 DC BS EN 60747-14-8. Semiconductor devices. Part 14-8. Semiconductor sensors. Capacitive degradation sensor of liquid
• BS ISO 22197-3:2019 Fine ceramics (advanced ceramics, advanced technical ceramics). Test method for air-purification performance of semiconducting photocatalytic materials - Removal of toluene
• BS ISO 22197-1:2008 Fine ceramics (advanced ceramics, advanced technical ceramics) - Test method for air-purification performance of semiconducting photocatalytic materials - Removal of nitric oxide
• BS ISO 22197-4:2013 Fine ceramics (advanced ceramics, advanced technical ceramics). Test method for air-purification performance of semiconducting photocatalytic materials. Removal of formaldehyde
• BS ISO 22197-3:2011 Fine ceramics (advanced ceramics, advanced technical ceramics). Test method for air-purification performance of semiconducting photocatalytic materials. Removal of toluene
• BS ISO 22197-2:2011 Fine ceramics (advanced ceramics, advanced technical ceramics). Test method for air-purification performance of semiconducting photocatalytic materials. Removal of acetaldehyde
• BS ISO 27447:2019 Tracked Changes. Fine ceramics (advanced ceramics, advanced technical ceramics). Test method for antibacterial activity of semiconducting photocatalytic materials
• BS EN 62418:2010 Semiconductor devices. Metallization stress void test
• BS ISO 22197-5:2013 Fine ceramics (advanced ceramics, advanced technical ceramics). Test method for air-purification performance of semiconducting photocatalytic materials. Removal of methyl mercaptan
• BS ISO 22197-1:2016 Tracked Changes. Fine ceramics (advanced ceramics, advanced technical ceramics). Test method for air-purification performance of semiconducting photocatalytic materials. Removal of nitric oxide
• BS EN 60191-4:2014 Mechanical standardization of semiconductor devices. Coding system and classification into forms of package outlines for semiconductor device packages
• BS EN 60191-4:2014+A1:2018 Mechanical standardization of semiconductor devices - Coding system and classification into forms of package outlines for semiconductor device packages
• BS IEC 60191-2:1966+A18:2011 Mechanical standardization of semiconductor devices. Dimensions
• BS ISO 22197-4:2021 Tracked Changes. Fine ceramics (advanced ceramics, advanced technical ceramics). Test method for air-purification performance of semiconducting photocatalytic materials. Removal of formaldehyde
• BS ISO 14605:2013 Fine ceramics (advanced ceramics, advanced technical ceramics). Light source for testing semiconducting photocatalytic materials used under indoor lighting environment
• BS EN 60191-6:2010 Mechanical standardization of semiconductor devices. General rules for the preparation of outline drawings of surface mounted semiconductor device packages
• BS EN 60191-6:2005 Mechanical standardization of semiconductor devices - General rules for the preparation of outline drawings of surface mounted semiconductor device packages
• BS EN 60191-6:2004 Mechanical standardization of semiconductor devices-Part 6:General rules for the preparation of outline drawings of surface mounted semiconductor device packages
• BS EN 60191-6:2009 Mechanical standardization of semiconductor devices - General rules for the preparation of outline drawings of surface mounted semiconductor device packages
• BS ISO 18061:2014 Fine Ceramics (Advanced Ceramics, Advanced Technical Ceramics). Determination of antiviral activity of semiconducting photocatalytic materials. Test method using bacteriophage Q-beta
• BS ISO 17168-2:2018 Fine ceramics (advanced ceramics, advanced technical ceramics). Test method for air-purification performance of semiconducting photocatalytic materials under indoor lighting environment - Removal of acetaldehyde
• BS ISO 22197-5:2021 Tracked Changes. Fine ceramics (advanced ceramics, advanced technical ceramics). Test method for air-purification performance of semiconducting photocatalytic materials. Removal of methyl mercaptan
• BS ISO 17168-4:2018 Fine ceramics (advanced ceramics, advanced technical ceramics). Test method for air-purification performance of semiconducting photocatalytic materials under indoor lighting environment - Removal of formaldehyde
• BS IEC 62373-1:2020 Semiconductor devices. Bias-temperature stability test for metal-oxide, semiconductor, field-effect transistors (MOSFET) - Fast BTI test for MOSFET
• 13/30284029 DC BS EN 60191-6-16. Mechanical standardization of semiconductor devices. Part 6-16. Glossary of semiconductor tests and burn-in sockets for BGA, LGA, FBGA and FLGA
• BS IEC 63229:2021 Semiconductor devices. Classification of defects in gallium nitride epitaxial film on silicon carbide substrate
• BS IEC 63275-1:2022 Semiconductor devices. Reliability test method for silicon carbide discrete metal-oxide semiconductor field effect transistors - Test method for bias temperature instability
• BS ISO 17168-1:2018 Fine ceramics (advanced ceramics, advanced technical ceramics). Test method for air-purification performance of semiconducting photocatalytic materials under indoor lighting environment - Removal of nitric oxide
• BS ISO 27448:2009 Fine ceramics (advanced ceramics, advanced technical ceramics) - Test method for self-cleaning performance of semiconducting photocatalytic materials - Measurement of water contact angle
• BS ISO 17094:2014 Fine ceramics (advanced ceramics, advanced technical ceramics). Test method for antibacterial activity of semiconducting photocatalytic materials under indoor lighting environment
• BS ISO 22551:2020 Fine ceramics (advanced ceramics, advanced technical ceramics). Determination of bacterial reduction rate by semiconducting photocatalytic materials under indoor lighting environment. Semi-dry method for estimating antibacterial activity on the…
• BS ISO 10676:2011 Fine ceramics (advanced ceramics, advanced technical ceramics). Test method for water purification performance of semiconducting photocatalytic materials by measurement of forming ability of active oxygen
• BS ISO 17168-5:2018 Fine ceramics (advanced ceramics, advanced technical ceramics). Test method for air-purification performance of semiconducting photocatalytic materials under indoor lighting environment - Removal of methyl mercaptan
• 21/30425873 DC BS ISO 22197-4. Fine ceramics (advanced ceramics, advanced technical ceramics). Test method for air-purification performance of semiconducting photocatalytic materials. Part 4. Removal of formaldehyde
• BS ISO 17168-3:2018 Fine ceramics (advanced ceramics, advanced technical ceramics). Test method for air-purification performance of semiconducting photocatalytic materials under indoor lighting environment - Removal of toluene
• BS ISO 10676:2010 Fine ceramics (advanced ceramics, advanced technical ceramics). Test method for water purification performance of semiconducting photocatalytic materials by measurement of forming ability of active oxygen
• BS ISO 24448:2023 Fine ceramics (advanced ceramics, advanced technical ceramics). LED light source for testing semiconducting photocatalytic materials used under indoor lighting environment
• BS ISO 27447:2009 Fine ceramics (advanced ceramics, advanced technical ceramics) - Test method for antibacterial activity of semiconducting photocatalytic materials
• BS EN 60191-6-10:2003 Mechanical standardization of semiconductor devices - Part 6-10:General rules for the preparation of outline drawings of surface mounted semiconductor device packages - Dimensions of P-VSON
• 21/30425876 DC BS ISO 22197-5. Fine ceramics (advanced ceramics, advanced technical ceramics). Test method for air-purification performance of semiconducting photocatalytic materials. Part 5. Removal of methyl mercaptan
• BS ISO 22601:2019 Fine ceramics (advanced ceramics, advanced technical ceramics). Test method for determination of phenol oxidative decomposition performance of semiconducting photocatalytic materials by quantitative analysis of total organic carbon (TOC)
• 22/30443234 DC BS EN 63378-3. Thermal standardization on semiconductor packages - Part 3. Thermal circuit simulation models of semiconductor packages for transient analysis
• 21/30432536 DC BS EN IEC 63364-1. Semiconductor devices. Semiconductor devices for IOT system. Part 1. Test method of sound variation detection
• IEC TR 63357:2022 Semiconductor devices. Standardization roadmap of fault test method for automotive vehicles
• 18/30381548 DC BS EN 62373-1. Semiconductor devices. Bias-temperature stability test for metal-oxide semiconductor field-effect transistors (MOSFET). Part 1. Fast BTI Test method
• 17/30366375 DC BS IEC 62373-1. Semiconductor devices. Bias-temperature stability test for metal-oxide semiconductor field-effect transistors (MOSFET). Part 1. Fast BTI Test method
• 23/30469486 DC BS EN IEC 63378-2. Thermal standardization on semiconductor packages - Part 2. 3D thermal simulation models of discrete semiconductor packages for steady-state analysis
• 23/30469010 DC BS EN IEC 63378-3. Thermal standardization on semiconductor packages - Part 3. Thermal circuit simulation models of discrete semiconductor packages for transient analysis
• IEC TR 63357:2022 Semiconductor devices. Standardization roadmap of fault test method for automotive vehicles
• BS EN 62373:2006 Bias-temperature stability test for metal-oxide, semiconductor, field-effect transistors (MOSFET)
• BS EN 62417:2010 Semiconductor devices - Mobile ion tests for metal-oxide semiconductor field effect transistors (MOSFETs)
• BS IEC 63284:2022 Semiconductor devices. Reliability test method by inductive load switching for gallium nitride transistors
• 20/30406234 DC BS IEC 63275-2 Ed.1.0. Semiconductor devices. Reliability test method for silicon carbide discrete metal-oxide semiconductor field effect transistors. Part 2. Test method for bipolar degradation by body diode operating
• 20/30406230 DC BS IEC 63275-1. Semiconductor devices. Reliability test method for silicon carbide discrete metal-oxide semiconductor field effect transistors. Part 1. Test method for bias temperature instability
• BS ISO 19810:2017 Fine ceramics (advanced ceramics, advanced technical ceramics). Test method for self-cleaning performance of semiconducting photocatalytic materials under indoor lighting environment. Measurement of water contact angle
• 21/30403033 DC BS EN ISO 24448. Fine ceramics (advanced ceramics, advanced technical ceramics). LED light source for testing semiconducting photocatalytic materials used under indoor lighting environment
• BS ISO 19652:2018 Fine ceramics (advanced ceramics, advanced technical ceramics). Test method for complete decomposition performance of semiconducting photocatalytic materials under indoor lighting environment. Decomposition of acetaldehyde
• BS ISO 18071:2016 Fine ceramics (advanced ceramics, advanced technical ceramics). Determination of antiviral activity of semiconducting photocatalytic materials under indoor lighting environment. Test method using bacteriophage Q-beta
• BS EN 60191-6-18:2010 Mechanical standardization of semiconductor devices. General rules for the preparation of outline drawings of surface mounted semiconductor device packages. Design guide for ball grid array (BGA)
• BS EN 60191-6-1:2001 Mechanical standardization of semiconductor devices. General rules for the preparation of outline drawings of surface mounted semiconductor device packages. Design guide for gull-wing lead terminals
• BS IEC 60747-5-13:2021 Semiconductor devices. Optoelectronic devices. Hydrogen sulphide corrosion test for LED packages
• 15/30328077 DC BS EN 60191-2. Mechanical standardization of semiconductor devices. Part 2. Dimensions
• 18/30386543 DC BS EN 63229 Ed.1.0. Semiconductor devices. The classification of defects in gallium nitride epitaxial wafers on silicon carbide substrate
• BS EN 60191-6-16:2007 Mechanical standardization of semiconductor devices - Glossary of semiconductor tests and burn-in sockets for BGA, LGA, FBGA and FLGA
• BS EN 60191-6-22:2013 Mechanical standardization of semiconductor devices. General rules for the preparation of outline drawings of surface mounted semiconductor device packages. Design guide for semiconductor packages Silicon Fine-pitch Ball Grid Array and Silicon Fine-pitch
• 19/30390371 DC BS IEC 60747-14-11. Semiconductor devices. Part 14-11. Semiconductor sensors. Test method of surface acoustic wave based integrated sensor for measuring ultra violet, illumination and temperature
• 18/30362458 DC BS IEC 60747-14-11. Semiconductor devices. Part 14-11. Semiconductor sensors. Test method of surface acoustic wave based integrated sensor for measuring ultra violet, illumination and temperature
• 19/30404655 DC BS EN IEC 63229. Semiconductor devices. The classification of defects in gallium nitride epitaxial film on silicon carbide substrate
• BS ISO 19810:2023 Fine ceramics (advanced ceramics, advanced technical ceramics). Test method for self-cleaning performance of semiconducting photocatalytic materials under indoor lighting environment. Measurement of water contact angle
• BS EN 60191-6-1:2002 Mechanical standardization of semiconductor devices - General rules for the preparation of outline drawings of surface mounted semiconductor device packages - Design guide for gull-wing lead terminals
• BS EN 60191-6-5:2001 Mechanical standardization of semiconductor devices. General rules for the preparation of outline drawings of surface mounted semiconductor device packages. Design guide for fine-pitchball grid array (FBGA)
• BS EN 60191-6-21:2010 Mechanical standardization of semiconductor devices. General rules for the preparation of outline drawings of surface mounted semiconductor device packages. Measuring methods for package dimensions of small outline packages (SOP)
• BS ISO 18560-1:2014 Fine ceramics (advanced ceramics, advanced technical ceramics). Test method for air-purification performance of semiconducting photocatalytic materials by test chamber method under indoor lighting environment. Removal of formaldehyde
• BS EN 60191-6-4:2003 Mechanical standardization of semiconductor devices - General rules for the preparation of outline drawings of surface mounted semiconductor device packages - Measuring methods for package dimensions of ball grid array (BGA)
• BS EN 60191-6-12:2011 Mechanical standardization of semiconductor devices. General rules for the preparation of outline drawings of surface mounted semiconductor device packages. Design guidelines for fine-pitch land grid array (FLGA)
• 20/30409285 DC BS IEC 63284. Semiconductor devices. Reliability test method of on-stress reliability by inductive load switching for gallium nitride transistors

German Institute for Standardization, Semiconductor catalysis?

• DIN CEN/TS 16599:2014-07*DIN SPEC 7397:2014-07 Photocatalysis - Irradiation conditions for testing photocatalytic properties of semiconducting materials and the measurement of these conditions; German version CEN/TS 16599:2014
• DIN EN 62417:2010-12 Semiconductor devices - Mobile ion tests for metal-oxide semiconductor field effect transistors (MOSFETs) (IEC 62417:2010); German version EN 62417:2010
• DIN EN 62418:2010-12 Semiconductor devices - Metallization stress void test (IEC 62418:2010); German version EN 62418:2010
• DIN EN 60191-6-16:2007-11 Mechanical standardization of semiconductor devices - Part 6-16: Glossary of semiconductor tests and burn-in sockets for BGA, LGA, FBGA and FLGA (IEC 60191-6-16:2007); German version EN 60191-6-16:2007 / Note: To be replaced by DIN EN 60191-6-16 (2013-...
• DIN 50441-1:1996 Testing of materials for semiconductor technology - Determination of the geometric dimensions of semiconductor wafers - Part 1: Thickness and thickness variation
• DIN EN 60191-4:2003 Mechanical standardization of semiconductor devices - Part 4: Coding system and classification into forms of package outlines for semiconductor device packages (IEC 60191-4:1999 + A1:2001 + A2:2002); German version EN 60191-4:1999 + A1:2002 + A2:2002
• DIN ISO 22197-1:2018-12 Fine ceramics (advanced ceramics, advanced technical ceramics) - Test method for air-purification performance of semiconducting photocatalytic materials - Part 1: Removal of nitric oxide (ISO 22197-1:2016)
• DIN 50454-2:1994 Testing of materials for semiconductor technology - Determination of the dislocation etch pits density in monocrystals of III-V-compound semiconductors - Part 2: Indium phosphide
• DIN 50454-3:1994 Testing of materials for semiconductor technology - Determination of the dislocation etch pits density in monocrystals of III-V-compound semiconductors - Part 3: Gallium phosphide
• DIN EN 62417:2010 Semiconductor devices - Mobile ion tests for metal-oxide semiconductor field effect transistors (MOSFETs) (IEC 62417:2010); German version EN 62417:2010
• DIN EN 60191-6-16:2007 Mechanical standardization of semiconductor devices - Part 6-16: Glossary of semiconductor tests and burn-in sockets for BGA, LGA, FBGA and FLGA (IEC 60191-6-16:2007); German version EN 60191-6-16:2007
• DIN ISO 22197-1:2018 Fine ceramics (advanced ceramics, advanced technical ceramics) - Test method for air-purification performance of semiconducting photocatalytic materials - Part 1: Removal of nitric oxide (ISO 22197-1:2016)
• DIN EN 60191-6:2010-06 Mechanical standardization of semiconductor devices - Part 6: General rules for the preparation of outline drawings of surface mounted semiconductor device packages (IEC 60191-6:2009); German version EN 60191-6:2009 / Note: DIN EN 60191-6 (2005-04) rem...
• DIN 50449-2:1998 Testing of materials for semiconductor technology - Determination of impurity content in semiconductors by infrared absorption - Part 2: Boron in gallium arsenide
• DIN EN 60191-6-8:2002-05 Mechanical standardization of semiconductor devices - Part 6-8: General rules for the preparation of outline drawings of surface mounted semiconductor device packages; Design guide for glass sealed ceramic quad flatpack (G-QFP) (IEC 60191-6-8:2001); Ge...
• DIN EN 60191-6-2:2002-09 Mechanical standardization of semiconductor devices - Part 6-2: General rules for the preparation of outline drawings of surface mounted semiconductor device packages; Design guide for 1,50 mm, 1,27 mm and 1,00 mm pitch ball and column terminal package...
• DIN EN 60191-6-6:2002-02 Mechanical standardization of semiconductor devices - Part 6-6: General rules for the preparation of outline drawings of surface mounted semiconductor device packages; Design guide for fine pitch land grid array (FLGA) (IEC 60191-6-6:2001); German vers...
• DIN EN 60191-6-3:2001-06 Mechanical standardization of semiconductor devices - Part 6-3: General rules for the preparation of outline drawings of surface mounted semiconductor device packages; Measuring methods for package dimensions of quat flat packs (QFP) (IEC 60191-6-3:200...
• DIN EN 60191-6-1:2002-08 Mechanical standardization of semiconductor devices - Part 6-1: General rules for the preparation of outline drawings of surface mounted semiconductor device packages; Design guide for gull-wing lead terminals (IEC 60191-6-1:2001); German version EN 60...
• DIN EN 60191-6-5:2002-05 Mechanical standardization of semiconductor devices - Part 6-5: General rules for the preparation of outline drawings of surface mounted semiconductor device packages; Design guide for fine-pitch ball grid array (FBGA) (IEC 60191-6-5:2001); German vers...
• DIN ISO 22197-1:2016 Fine ceramics (advanced ceramics, advanced technical ceramics) - Test method for air-purification performance of semiconducting photocatalytic materials - Part 1: Removal of nitric oxide (ISO 22197-1:2007)
• DIN EN 60191-6-22:2013-08 Mechanical standardization of semiconductor devices - Part 6-22: General rules for the preparation of outline drawings of surface mounted semiconductor device packages - Design guide for semiconductor packages Silicon Fine-pitch Ball Grid Array and Sil...
• DIN EN 62373:2007 Bias-temperature stability test for metal-oxide, semiconductor, field-effect transistors (MOSFET) (IEC 62373:2006); German version EN 62373:2006
• DIN EN 62373:2007-01 Bias-temperature stability test for metal-oxide, semiconductor, field-effect transistors (MOSFET) (IEC 62373:2006); German version EN 62373:2006
• DIN EN 60191-6-10:2004 Mechanical standardization of semiconductor devices - Part 6-10: General rules for the preparation of outline drawings of surface mounted semiconductor device packages - Dimensions of P-VSON (IEC 60191-6-10:2003); German version EN 60191-6-10:2003
• DIN 50449-1:1997 Testing of materials for semiconductor technology - Determination of impurity content in semiconductors by infrared absorption - Part 1: Carbon in gallium arsenide
• DIN EN 60191-6-10:2004-05 Mechanical standardization of semiconductor devices - Part 6-10: General rules for the preparation of outline drawings of surface mounted semiconductor device packages - Dimensions of P-VSON (IEC 60191-6-10:2003); German version EN 60191-6-10:2003
• DIN EN 60191-4:2019-02 Mechanical standardization of semiconductor devices - Part 4: Coding system and classification into forms of package outlines for semiconductor device packages (IEC 60191-4:2013 + A1:2018); German version EN 60191-4:2014 + A1:2018 / Note: DIN EN 60191-...
• DIN 50454-1:2000 Testing of materials for semiconductor technology - Determination of dislocations in monocrystals of III-V-compound semi-conductors - Part 1: Gallium arsenide
• DIN EN 60191-6-3:2001 Mechanical standardization of semiconductor devices - Part 6-3: General rules for the preparation of outline drawings of surface mounted semiconductor device packages; Measuring methods for package dimensions of quat flat packs (QFP) (IEC 60191-6-3:2000);
• DIN EN 60191-6-4:2004-01 Mechanical standardization of semiconductor devices - Part 6-4: General rules for the preparation of outline drawings of surface mounted semiconductor device packages - Measuring methods for package dimensions of ball grid array (BGA) (IEC 60191-6-4:20...
• DIN EN 60191-6-18:2010-08 Mechanical standardization of semiconductor devices - Part 6-18: General rules for the preparation of outline drawings of surface mounted semiconductor device packages - Design guide for ball grid array (BGA) (IEC 60191-6-18:2010 + Cor. :2010); German ...
• DIN EN 60191-4:2014 Mechanical standardization of semiconductor devices - Part 4: Coding system and classification into forms of package outlines for semiconductor device packages (IEC 60191-4:2013); German version EN 60191-4:2014

Japanese Industrial Standards Committee (JISC), Semiconductor catalysis?

• JIS R 1750:2012 Fine ceramics -- Light source for testing semiconducting photocatalytic materials used under indoor lighting environment
• JIS R 1708:2016 Fine ceramics (Advanced ceramics, advanced technical ceramics) -- Test method for determination of photocatalytic activity on semiconducting photocatalytic materials by dissolved oxygen consumption
• JIS R 1712:2022 Fine ceramics (advanced ceramics, advanced technical ceramics) -- Test method for antialgal activity of semiconducting photocatalytic materials
• JIS C 7040:1969 General rules for mechanical standardization of semiconductor integrated circuits

European Committee for Electrotechnical Standardization（CENELEC）, Semiconductor catalysis?

• EN 62417:2010 Semiconductor devices - Mobile ion tests for metal-oxide semiconductor field effect transistors (MOSFETs)
• EN 62418:2010 Semiconductor devices - Metallization stress void test
• EN 60191-6-16:2007 Mechanical standardization of semiconductor devices - Part 6-16: Glossary of semiconductor tests and burn-in sockets for BGA, LGA, FBGA and FLGA
• EN 60191-6:2009 Mechanical standardization of semiconductor devices - Part 6: General rules for the preparation of outline drawings of surface mounted semiconductor device packages
• EN 60191-6-22:2013 Mechanical standardization of semiconductor devices - Part 6-22: General rules for the preparation of outline drawings of surface mounted semiconductor device packages - Design guide for semiconductor packages Silicon Fine-pitch Ball Grid Array and Silico
• EN 62373:2006 Bias-temperature stability test for metal-oxide, semiconductor, field-effect transistors (MOSFET)
• EN 60191-6-10:2003 Mechanical standardization of semiconductor devices Part 6-10: General rules for the preparation of outline drawings of surface mounted semiconductor device packages Dimensions of P-VSON

International Organization for Standardization (ISO), Semiconductor catalysis?

• ISO 19722:2017 Fine ceramics (advanced ceramics, advanced technical ceramics) - Test method for determination of photocatalytic activity on semiconducting photocatalytic materials by dissolved oxygen consumption
• ISO 13125:2013 Fine ceramics (advanced ceramics, advanced technical ceramics) - Test method for antifungal activity of semiconducting photocatalytic materials
• ISO 19635:2016 Fine ceramics (advanced ceramics, advanced technical ceramics) - Test method for antialgal activity of semiconducting photocatalytic materials
• ISO 27447:2019 Fine ceramics (advanced ceramics, advanced technical ceramics) — Test method for antibacterial activity of semiconducting photocatalytic materials
• ISO 27447:2009 Fine ceramics (advanced ceramics, advanced technical ceramics) - Test method for antibacterial activity of semiconducting photocatalytic materials
• ISO 22197-1:2016 Fine ceramics (advanced ceramics, advanced technical ceramics) - Test method for air-purification performance of semiconducting photocatalytic materials - Part 1: Removal of nitric oxide
• ISO 22197-3:2019 Fine ceramics (advanced ceramics, advanced technical ceramics) — Test method for air-purification performance of semiconducting photocatalytic materials — Part 3: Removal of toluene
• ISO 22197-2:2019 Fine ceramics (advanced ceramics, advanced technical ceramics) — Test method for air-purification performance of semiconducting photocatalytic materials — Part 2: Removal of acetaldehyde
• ISO 10677:2011 Fine ceramics (advanced ceramics, advanced technical ceramics) - Ultraviolet light source for testing semiconducting photocatalytic materials
• ISO 22197-1:2007 Fine ceramics (advanced ceramics, advanced technical ceramics) - Test method for air-purification performance of semiconducting photocatalytic materials - Part 1: Removal of nitric oxide
• ISO 18061:2014 Fine Ceramics (Advanced Ceramics, Advanced Technical Ceramics) - Determination of antiviral activity of semiconducting photocatalytic materials - Test method using bacteriophage Q-beta
• ISO 22197-2:2011 Fine ceramics (advanced ceramics, advanced technical ceramics) - Test method for air-purification performance of semiconducting photocatalytic materials - Part 2: Removal of acetaldehyde
• ISO 22197-3:2011 Fine ceramics (advanced ceramics, advanced technical ceramics) - Test method for air-purification performance of semiconducting photocatalytic materials - Part 3: Removal of toluene
• ISO 22197-4:2021 Fine ceramics (advanced ceramics, advanced technical ceramics) - Test method for air-purification performance of semiconducting photocatalytic materials - Part 4: Removal of formaldehyde
• ISO 22197-5:2021 Fine ceramics (advanced ceramics, advanced technical ceramics) - Test method for air-purification performance of semiconducting photocatalytic materials - Part 5: Removal of methyl mercaptan
• ISO 22197-4:2013 Fine ceramics (advanced ceramics, advanced technical ceramics) - Test method for air-purification performance of semiconducting photocatalytic materials - Part 4: Removal of formaldehyde
• ISO 22197-5:2013 Fine ceramics (advanced ceramics, advanced technical ceramics) - Test method for air-purification performance of semiconducting photocatalytic materials - Part 5: Removal of methyl mercaptan
• ISO 17094:2014 Fine ceramics (advanced ceramics, advanced technical ceramics) - Test method for antibacterial activity of semiconducting photocatalytic materials under indoor lighting environment
• ISO 10676:2010 Fine ceramics (advanced ceramics, advanced technical ceramics) - Test method for water purification performance of semiconducting photocatalytic materials by measurement of forming ability of active oxygen
• ISO 24448:2023 Fine ceramics (advanced ceramics, advanced technical ceramics) — LED light source for testing semiconducting photocatalytic materials used under indoor lighting environment
• ISO 17168-1:2018 Fine ceramics (advanced ceramics, advanced technical ceramics) - Test method for air-purification performance of semiconducting photocatalytic materials under indoor lighting environment - Part 1: Removal of nitric oxide
• ISO 17168-2:2018 Fine ceramics (advanced ceramics, advanced technical ceramics) - Test method for air-purification performance of semiconducting photocatalytic materials under indoor lighting environment - Part 2: Removal of acetaldehyde
• ISO 17168-3:2018 Fine ceramics (advanced ceramics, advanced technical ceramics) - Test method for air-purification performance of semiconducting photocatalytic materials under indoor lighting environment - Part 3: Removal of toluene
• ISO 17168-4:2018 Fine ceramics (advanced ceramics, advanced technical ceramics) - Test method for air-purification performance of semiconducting photocatalytic materials under indoor lighting environment - Part 4: Removal of formaldehyde
• ISO 22601:2019 Fine ceramics (advanced ceramics, advanced technical ceramics) — Test method for determination of phenol oxidative decomposition performance of semiconducting photocatalytic materials by quantitative
• ISO 19810:2017 Fine ceramics (advanced ceramics, advanced technical ceramics) - Test method for self-cleaning performance of semiconducting photocatalytic materials under indoor lighting environment - Measurement of water contact angle
• ISO 19652:2018 Fine ceramics (advanced ceramics, advanced technical ceramics) - Test method for complete decomposition performance of semiconducting photocatalytic materials under indoor lighting environment - Decomposition of acetaldehyde
• ISO 19810:2023 Fine ceramics (advanced ceramics, advanced technical ceramics) — Test method for self-cleaning performance of semiconducting photocatalytic materials under indoor lighting environment — Measurement of water contact angle
• ISO 18071:2016 Fine ceramics (advanced ceramics, advanced technical ceramics) - Determination of antiviral activity of semiconducting photocatalytic materials under indoor lighting environment - Test method using bacteriophage Q-beta
• ISO 17168-5:2018 Fine ceramics (advanced ceramics, advanced technical ceramics) - Test method for air-purification performance of semiconducting photocatalytic materials under indoor lighting environment - Part 5: Removal of methyl mercaptan
• ISO 22551:2020 Fine ceramics (advanced ceramics, advanced technical ceramics) — Determination of bacterial reduction rate by semiconducting photocatalytic materials under indoor lighting environment — Semi-dry metho

IEC - International Electrotechnical Commission, Semiconductor catalysis?

• IEC TR 63133:2017 Semiconductor devices - Scan based ageing level estimation for semiconductor devices (Edition 1.0)
• PAS 60191-6-18-2008 Mechanical standardization of semiconductor devices – Part 6-18: General rules for the preparation of outline drawings of surface mounted semiconductor device packages – Design guide for ball grid array (BGA) (Edition 1.0)

Defense Logistics Agency, Semiconductor catalysis?

• DLA SMD-5962-96665 REV D-2005 MICROCIRCUIT, DIGITAL, RADIATION HARDENED, CMOS, HEX VOLTAGE LEVEL SHIFTER FOR TTL-TO-CMOS OR CMOS-TO- CMOS OPERATION, MONOLITHIC SILICON
• DLA SMD-5962-94532-1994 MICROCIRCUIT, CMOS, 64-BIT MICROPROCESSOR
• DLA SMD-5962-96736-1996 MICROCIRCUIT, DIGITAL, RADIATION HARDENED, CMOS, HIGH SPEED 8-BIT BIDIRECTIONAL CMOS/TTL INTERFACE LEVEL CONVERTER, MONOLITHIC SILICON
• DLA SMD-5962-77044 REV F-2005 MICROCIRCUIT, DIGITAL, CMOS, NOR GATES, MONOLITHIC SILICON
• DLA SMD-5962-77027 REV C-1982 MICROCIRCUITS, DIGITAL, CMOS, HEX INVERTER, MONOLITHIC SILICON
• DLA SMD-5962-77053 REV M-2005 MICROCIRCUIT, CMOS, QUAD ANALOG SWITCH, MONOLITHIC SILICON
• DLA SMD-5962-84043 REV E-2005 MICROCIRCUIT, DIGITAL, HIGH-SPEED CMOS, EXCLUSIVE NOR GATE, MONOLITHIC SILICON
• DLA SMD-5962-84069 REV F-2005 MICROCIRCUIT, DIGITAL, CMOS, BUS CONTROLLER, MONOLITHIC SILICON
• DLA SMD-5962-77034 REV X-2006 MICROCIRCUIT, LINEAR, ADJUSTABLE VOLTAGE REGULATOR, MONOLITHIC SILICON
• DLA SMD-5962-77037 REV G-2005 MICROCIRCUIT, DIGITAL, CMOS, 4-BIT MAGNITUDE COMPARATOR, MONOLITHIC SILICON
• DLA SMD-5962-93007 REV D-1996 MICROCIRCUIT, DIGITAL, CMOS, TWO DIMENSIONAL CONVOLVER MONOLITHIC SILICON
• DLA SMD-5962-77023 REV F-2005 MICROCIRCUIT, DIGITAL, CMOS, DUAL BINARY UP-COUNTER, MONOLITHIC SILICON
• DLA SMD-5962-81019 REV B-1984 MICROCIRCUITS, DIGITAL, CMOS, QUAD D LATCH, MONOLITHIC SILICON
• DLA SMD-5962-78029 REV H-2005 MICROCIRCUIT, DIGITAL, CMOS, ENCODER- DECODER, MONOLITHIC SILICON
• DLA SMD-5962-94533-1994 MICROCIRCUIT, DIGITAL, CMOS, 32-BIT MICROPROCESSOR, MONOLITHIC SILICON
• DLA SMD-5962-87686 REV D-1999 MICROCIRCUIT, DIGITAL, CMOS, 16 X 16 MULTIPLIER, MONOLITHIC SILICON
• DLA SMD-5962-88503 REV J-2003 MICROCIRCUIT, LINEAR, DUAL MOSFET DRIVERS, MONOLITHIC SILICON
• DLA SMD-5962-06208-2006 MICROCIRCUIT, DIGITAL, CMOS, DIGITAL SIGNAL PROCESSOR, MONOLITHIC SILICON
• DLA SMD-5962-84052 REV D-1990 MICROCIRCUITS, DIGITAL, CMOS, 16 BIT MICROPROCESSOR, MONOLITHIC SILICON
• DLA SMD-5962-84068 REV E-2005 MICROCIRCUIT, DIGITAL, CMOS, CLOCK GENERATOR DRIVER, MONOLITHIC SILICON
• DLA SMD-5962-77024 REV F-2005 MICROCIRCUIT, DIGITAL, CMOS, QUAD 2-INPUT AND GATE, MONOLITHIC SILICON
• DLA SMD-5962-77036 REV D-2005 MICROCIRCUIT, DIGITAL, CMOS, QUAD 2-INPUT AND GATE, MONOLITHIC SILICON
• DLA SMD-5962-77051 REV F-2005 MICROCIRCUIT, DIGITAL, CMOS, TRIPLE 3-INPUT AND GATE, MONOLITHIC SILICON
• DLA SMD-5962-77059 REV E-2005 MICROCIRCUIT, DIGITAL, CMOS, DUAL 4-INPUT AND GATE, MONOLITHIC SILICON
• DLA SMD-5962-77060 REV E-2005 MICROCIRCUIT, DIGITAL, CMOS, DUAL 4-INPUT OR GATE, MONOLITHIC SILICON
• DLA SMD-5962-79012 REV A-1986 MICROCIRCUITS, DIGITAL, CMOS, STATIC SHIFT REGISTER, MONOLITHIC SILICON
• DLA SMD-5962-79013 REV F-2005 MICROCIRCUIT, DIGITAL, CMOS, BUFFERED TRIPLE 3-INPUT NAND GATE, MONOLITHIC SILICON
• DLA SMD-5962-79014 REV B-1987 MICROCIRCUIT, DIGITAL, CMOS, HEX INVERTER BUFFER, MONOLITHIC SILICON
• DLA SMD-5962-89638-1989 MICROCIRCUIT, LINEAR, CMOS CURRENT MODE CONTROLLER, MONOLITHIC SILICON
• DLA SMD-5962-89711 REV B-2006 MICROCIRCUIT, DIGITAL, CMOS 64-BIT OUTPUT CORRELATOR, MONOLITHIC SILICON
• DLA SMD-5962-94642-1994 MICROCIRCUIT, DIGITAL, CMOS, ENHANCED MULTI-FUNCTIONAL PERIPHERAL, MONOLITHIC SILICON
• DLA SMD-5962-89725 REV A-1995 MIRCOCIRCUIT, DIGITAL, CMOS, ASYNCHRONOUS, SERIAL CONTROLLER, MONOLITHIC SILICON
• DLA SMD-5962-89877 REV C-2004 MICROCIRCUIT, LINEAR, CMOS, DUAL, RS232, TRANSCEIVER, MONOLITHIC SILICON
• DLA SMD-5962-89982 REV B-2004 MICROCIRCUIT, DIGITAL, CHMOS, 16-BIT MICROCONTROLLER, MONOLITHIC SILICON
• DLA SMD-5962-90526 REV M-2004 MICROCIRCUIT, DIGITAL, CMOS, DIGITAL SIGNAL PROCESSOR, MONOLITHIC SILICON
• DLA SMD-5962-92331-1993 MICROCIRCUIT, DIGITAL, CMOS, COORDINATE TRANSFORMER, 16X16 BIT, MONOLITHIC SILICON
• DLA SMD-5962-90657 REV A-2006 MICROCIRCUIT, DIGITAL, CMOS, UNIVERSAL SERIAL CONTROLLER, MONOLITHIC SILICON
• DLA SMD-5962-90678 REV A-2005 MICROCIRCUIT, DIGITAL, CMOS, 16-BIT, MICROPROCESSOR, MONOLITHIC SILICON
• DLA SMD-5962-93006 REV B-1999 MICROCIRCUIT, DIGITAL, CMOS, DIGITAL SIGNAL PROCESSOR, MONOLITHIC SILICON
• DLA SMD-5962-93183 REV C-2002 MICROCIRCUIT, LINEAR, BUS TRANSCEIVER, DIFFERENTIAL, MONOLITHIC SILICON
• DLA SMD-5962-93228 REV B-2005 MICROCIRCUIT, DIGITAL, CMOS, TEST BUS CONTROLLER, MONOLITHIC SILICON
• DLA SMD-5962-90741 REV B-2006 MICROCIRCUIT, DIGITAL, BIPOLAR CMOS, OCTAL BUFFER AND LINE DRIVERS/MOS DRIVER WITH THREE-STATE OUTPUTS, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
• DLA SMD-5962-90744 REV B-2006 MICROCIRCUIT, DIGITAL, BIPOLAR CMOS, 10-BIT BUS/MOS MEMORY DRIVER WITH THREE-STATE OUTPUTS, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
• DLA SMD-5962-79018 REV C-2006 MICROCIRCUIT, MEMORY, DIGITAL, CMOS 128 X 8-BIT RANDOM ACCESS MEMORY (RAM), MONOLITHIC SILICON
• DLA SMD-5962-87660 REV A-2001 MICROCIRCUITS, LINEAR, MOSFET DRIVER, DUAL POWER
• DLA MIL-PRF-19500/421 G VALID NOTICE 1-2009 Semiconductor, Device, Dual Transistor, Unitized, NPN/PNP, Complementary, Silicon, Types 2N3838, 2N4854, and 2N4854U, JAN, JANTX, and JANTXV
• DLA SMD-5962-93168 REV A-1995 MICROCIRCUIT, MEMORY, DIGITAL, CMOS ELECTRICALLY ERASABLE PROGRAMMABLE LOGIC ARRAY, MONOLITHIC SILICON
• DLA SMD-5962-84062 REV G-2002 MICROCIRCUIT, DIGITAL, HIGH SPEED CMOS, 3-TO-8 LINE DECODER, MONOLITHIC SILICON
• DLA SMD-5962-84065 REV E-2005 MICROCIRCUIT, DIGITAL, CMOS, PROGRAMMABLE INTERVAL TIMER, MONOLITHIC SILICON
• DLA SMD-5962-84066 REV G-2006 MICROCIRCUIT, DIGITAL, CMOS, PROGRAMMABLE PERIPHERAL INTERFACE, MONOLITHIC SILICON
• DLA SMD-5962-85149 REV A-1988 MICROCIRCUIT, NMOS, BUS CONTROLLER, MONOLITHIC SILICON
• DLA SMD-5962-78008 REV H-2005 MICROCIRCUIT, DIGITAL, MOS CLOCK DRIVERS, MONOLITHIC SILICON
• DLA SMD-5962-79017-1979 MICROCIRCUITS, CMOS, UNIVERSAL ASYNCHRONOUS RECEIVER/TRANSMITTER MONOLITHIC SILICON GATE
• DLA SMD-5962-84040 REV F-2005 MICROCIRCUIT, DIGITAL, HIGH-SPEED CMOS, 8-INPUT NAND GATE, MONOLITHIC SILICON
• DLA SMD-5962-03245 REV A-2004 MICROCIRCUIT, DIGITAL, CMOS, FIXED-POINT DIGITAL SIGNAL PROCESSOR, MONOLITHIC SILICON
• DLA SMD-5962-94513 REV C-2006 MICROCIRCUIT, LINEAR, LOW POWER, PULSE WIDTH MODULATOR, MONOLITHIC SILICON
• DLA SMD-5962-94514 REV B-2004 MICROCIRCUIT, LINEAR, MICROPROCESSOR SUPERVISORY CIRCUIT, MONOLITHIC SILICON
• DLA SMD-5962-94537-1994 MICROCIRCUIT, DIGITAL, CMOS, 8-BIT MEMORY PROCESSING UNIT, MONOLITHIC SILICON
• DLA SMD-5962-91641 REV A-2005 MICROCIRCUIT, DIGITAL, CMOS, REAL TIME CLOCK, MONOLITHIC SILICON
• DLA SMD-5962-89959 REV C-1996 MICROCIRCUIT, DIGITAL, CMOS, 16-BIT CASCADABLE ALU, MONOLITHIC SILICON
• DLA SMD-5962-89990 REV A-2005 MICROCIRCUIT, DIGITAL, HIGH SPEED CMOS, PHASE- LOCKED LOOP FILTER, MONOLITHIC SILICON
• DLA SMD-5962-94745-1995 MICROCIRCUIT, MEMORY, DIGITAL, CMOS 256K X 1-BIT SERIAL CONFIGURATION PROM, MONOLITHIC SILICON
• DLA SMD-5962-88572 REV B-1991 MICROCIRCUIT, DIGITAL, NMOS INTERRUPT GENERATOR, MONOLITHIC SILICON
• DLA SMD-5962-90544 REV A-2003 MICROCIRCUIT, DIGITAL, CMOS, HIGH PERFORMANCE MICROCONTROLLER MONOLITHIC SILICON
• DLA SMD-5962-90640 REV C-2003 MICROCIRCUIT, DIGITAL, CMOS, QUAD BILATERAL SWITCH, MONOLITHIC SILICON
• DLA SMD-5962-90708 REV A-1996 MICROCIRCUIT, DIGITAL, CMOS, 8 X 8 MULTIPLIER, MONOLITHIC SILICON
• DLA SMD-5962-93260 REV B-1996 MICROCIRCUIT, DIGITAL, CMOS, 12 X 10-BIT MATRIX MULTIPLIER, MONOLITHIC SILICON
• DLA SMD-5962-95826 REV C-2003 MICROCIRCUIT, DIGITAL, RADIATION HARDENED, CMOS, NOR GATE, MONOLITHIC SILICON
• DLA SMD-5962-88595 REV A-1989 MICROCIRCUITS, DIGITAL, NMOS, 256 X 4 STATIC RAM (SRAM) MONOLITHIC SILICON
• DLA SMD-5962-88770 REV H-2003 MICROCIRCUIT, LINEAR, SINGLE POWER MOSFET DRIVER, MONOLITHIC SILICON
• DLA SMD-5962-84044 REV F-2005 MICROCIRCUIT, DIGITAL, HIGH-SPEED CMOS, DUAL 4-INPUT NOR GATE, MONOLITHIC SILICON

KR-KS, Semiconductor catalysis?

• KS L ISO 10677-2023 Fine ceramics (advanced ceramics, advanced technical ceramics) — Ultraviolet light source for testing semiconducting photocatalytic materials
• KS L ISO 27447-2023 Fine ceramics (advanced ceramics, advanced technical ceramics) — Test method for antibacterial activity of semiconducting photocatalytic materials
• KS L ISO 14605-2023 Fine ceramics (advanced ceramics, advanced technical ceramics) — Light source for testing semiconducting photocatalytic materials used under indoor lighting environment
• KS L ISO 22197-1-2018 Fine ceramics(advanced ceramics, advanced technical ceramics) — Test method for air-purification performance of semiconducting photocatalytic materials — Part 1: Removal of nitric oxide
• KS L ISO 22197-2-2020 Fine ceramics(advanced ceramics, advanced technical ceramics) —Test method for air-purification performance of semiconducting photocatalytic materials — Part 2: Removal of acetaldehyde
• KS L ISO 22197-4-2020 Fine ceramics(advanced ceramics, advanced technical ceramics) —Test method for air-purification performance of semiconducting photocatalytic materials — Part 4: Removal of formaldehyde
• KS L ISO 22197-3-2020 Fine ceramics(advanced ceramics, advanced technical ceramics) —Test method for air-purification performance of semiconducting photocatalytic materials — Part 3: Removal of toluene
• KS L ISO 22197-1-2022 Fine ceramics(advanced ceramics, advanced technical ceramics) — Test method for air-purification performance of semiconducting photocatalytic materials — Part 1: Removal of nitric oxide
• KS L ISO 22197-5-2020 Fine ceramics(advanced ceramics, advanced technical ceramics) —Test method for air-purification performance of semiconducting photocatalytic materials — Part 5: Removal of methyl mercaptan
• KS L ISO 17168-1-2020 Fine ceramics(advanced ceramics, advanced technical ceramics) —Test method for air-purification performance of semiconducting photocatalytic materials under indoor lighting environment —Part 1: Remova
• KS L ISO 17168-2-2020 Fine ceramics(advanced ceramics, advanced technical ceramics) —Test method for air-purification performance of semiconducting photocatalytic materials under indoor lighting environment —Part 2: Remova
• KS L ISO 17168-4-2020 Fine ceramics(advanced ceramics, advanced technical ceramics) —Test method for air-purification performance of semiconducting photocatalytic materials under indoor lighting environment —Part 4: Remova
• KS L ISO 17168-3-2020 Fine ceramics(advanced ceramics, advanced technical ceramics) —Test method for air-purification performance of semiconducting photocatalytic materials under indoor lighting environment —Part 3: Remova

Group Standards of the People's Republic of China, Semiconductor catalysis?

• T/CECA 35-2019 Metal oxide semiconductor gas sensor
• T/CIE 144-2022
• T/ZZB 2283-2021 Ultra-high purity graphite powder for semiconductor silicon carbide crystal
• T/QGCML 744-2023 Chemical cleaning process specification for semiconductor equipment parts
• T/QGCML 743-2023 Specifications for anodizing process of semiconductor equipment parts
• T/CASAS 006-2020 The general specification for silicon carbide metal-oxide-semiconductor field-effect-transistor
• T/CASAS 015-2022 Power cycling test method for silicon carbide metal-oxide-semiconductor field-effect-transistor（SiC MOSFET）
• T/ZJATA 0017-2023 Chemical vapor deposition (CVD) epitaxy equipment for preparing silicon carbide semiconductor materials
• T/CASAS 016-2022 Transient dual test method for the measurement of the thermal resistance junction to case of silicon carbide metal-oxide-semiconductor field-effect-transistor（SiC MOSFET）

Professional Standard - Electron, Semiconductor catalysis?

• SJ/Z 9021.1-1987 Mechanical standardization of semiconductor components Part 1 Preparation of drawings of semiconductor components
• SJ/T 10424-1993 Glass powder for passivation packaging for ues in semiconduoctor devices
• SJ 20025-1992 Generic specification for gas sensors of metal-oxide semiconductor
• SJ/Z 9021.4-1987 Mechanical standardization of semiconductor components Part 4 Classification and coding system for package outlines of semiconductor components
• SJ 20026-1992 Measuring methods for gas sensors of metal-oxide semiconductor
• SJ 20079-1992 Test mehods for gas sensors of metal-oxide semiconductor
• SJ/Z 9021.2-1987 Mechanical standardization of semiconductor devices--Part 2:Dimensions
• SJ 50033/42-1994 Semiconductor discrete device.Detail specification for type CSO467 GaAs microwave FET
• SJ 50033/78-1995 Semiconductor discrete devices.Detail specification for type CS0464 GaAs microwave FET
• SJ/T 11824-2022 Metal Oxide Semiconductor Field Effect Transistor (MOSFET) Equivalent Capacitance and Voltage Change Rate Test Method
• SJ 50033/118-1997 Semiconductor discrete devices Detail specification for type 2EK31 GaAs switching diode
• SJ 50033/79-1995 Semiconductor discrete devices.Detail specification for type CS0536 GaAs microwave power FET
• SJ 50033/120-1997 Semiconductor discrete devices Detail specification for type CS205 GaAs microwave power field effect transistor
• SJ 50033.51-1994 Semiconductor discrete devices.Detail specification for type CS0558 GaAs microwave dual gate FET
• SJ 50033.52-1994 semiconductor discrete device.Detail specification for type CS0529 GaAs microwave Power field effect transistor
• SJ 50033.54-1994 Semiconductor discrete device.Detail specification for type CS0532 GaAs microwave power field effect transistor
• SJ 50033/119-1997 Semiconductor discrete devices Detail specification for type CS204 GaAs microwave power field effect transistor
• SJ 50033/81-1995 Semiconductor discrete devices.Detail specification for type CS0524 GaAs microwave power FET
• SJ 50033/80-1995 Semiconductor discrete devices.Detail specification for type CS0513 GaAs microwave power FET
• SJ 50033/29-1994 Semiconductor discrete device.Detail specification for GaAs high-speed switching assembly for type EK20
• SJ 50033/27-1994 Semiconductor discrete device.Detail specification for GaAs varactor diodes for 2EC600 series
• SJ 50033.53-1994 Semiconductor discrete device.Detail specification for type CS0530 and CS0531 GaAs microwave Power field effect transistor
• SJ 50033/106-1996 semiconductor discrete device.Detail specification for type CS203 GaAs microwave Low noise field effect transistor
• SJ 50033/141-1999 Semiconductor discrete devices.Detail specification for type 2EK150 GaAs high speed switching diode

International Electrotechnical Commission (IEC), Semiconductor catalysis?

• IEC 60191-1:1966 Mechanical standardization of semiconductor devices. Part 1 : Preparation of drawings of semiconductor devices
• IEC 62417:2010 Semiconductor devices - Mobile ion tests for metal-oxide semiconductor field effect transistors (MOSFETs)
• IEC 60191-1A:1969 Mechanical standardization of semiconductor devices. Part 1 : Preparation of drawings of semiconductor devices.
• IEC 60191-1C:1974 Mechanical standardization of semiconductor devices. Part 1 : Preparation of drawings of semiconductor devices.
• IEC TR 63378-1:2021 Thermal standardization on semiconductor packages - Part 1: Thermal resistance and thermal parameter of BGA, QFP type semiconductor packages
• IEC 62418:2010 Semiconductor devices - Metallization stress void test
• IEC 60191-6-16:2007 Mechanical standardization of semiconductor devices - Part 6-16: Glossary of semiconductor tests and burn-in sockets for BGA, LGA, FBGA and FLGA
• IEC 60747-8-4:2004 Discrete semiconductor devices - Part 8-4: Metal-oxide-semiconductor field-effect transistors (MOSFETs) for power switching applications
• IEC 63364-1:2022 Semiconductor devices - Semiconductor devices for IoT system - Part 1: Test method of sound variation detection
• IEC 60191-4:2013+AMD1:2018 CSV Mechanical standardization of semiconductor devices - Part 4: Coding system and classification into forms of package outlines for semiconductor device packages
• IEC 60191-4:2002 Mechanical standardization of semiconductor devices - Part 4: Coding system and classification into forms of package outlines for semiconductor device packages
• IEC 60191-4:1987 Mechanical standardization of semiconductor devices. Part 4 : Coding system and classification into forms of package outlines for semiconductor devices
• IEC 60191-2:1966 Mechanical standardization of semiconductor devices. Part 2 : Dimensions
• IEC 60191-2:2012 DB Mechanical standardization of semiconductor devices - Part 2: Dimensions
• IEC 60191-2:1966/AMD5:2002 Mechanical standardization of semiconductor devices - Part 2: Dimensions
• IEC 60191-4:1999 Mechanical standardization of semiconductor devices - Part 4: Coding system and classification into forms of package outlines for semiconductor device packages
• IEC 60191-4:2013 Mechanical Standardization of Semiconductor Devices - Part 4: Coding system and classification into forms of package outlines for semiconductor device packages
• IEC 60191-4:2018 Mechanical Standardization of Semiconductor Devices - Part 4: Coding system and classification into forms of package outlines for semiconductor device packages
• IEC 60191-6:1990 Mechanical standardization of semiconductor devices; part 6: general rules for the preparation of outline drawings of surface mounted semiconductor device packages
• IEC 60191-6:2004 Mechanical standardization of semiconductor devices - Part 6: General rules for the preparation of outline drawings of surface mounted semiconductor device packages
• IEC 60191-6:2009 Mechanical standardization of semiconductor devices - Part 6: General rules for the preparation of outline drawings of surface mounted semiconductor device packages
• IEC 63275-1:2022 Semiconductor devices - Reliability test method for silicon carbide discrete metal-oxide semiconductor field effect transistors - Part 1: Test method for bias temperature instability
• IEC 62373-1:2020 Semiconductor devices - Bias-temperature stability test for metal-oxide, semiconductor, field-effect transistors (MOSFET) - Part 1: Fast BTI test for MOSFET
• IEC 63275-2:2022 Semiconductor devices - Reliability test method for silicon carbide discrete metal-oxide semiconductor field effect transistors - Part 2: Test method for bipolar degradation due to body diode operatio
• IEC 63229:2021 Semiconductor devices - Classification of defects in gallium nitride epitaxial film on silicon carbide substrate
• IEC 60191-4/AMD1:2001 Mechanical standardization of semiconductor devices - Part 4: Coding system and classification into forms of package outlines for semiconductor device packages; Amendment 1
• IEC 60191-4/AMD2:2002 Mechanical standardization of semiconductor devices - Part 4: Coding system and classification into forms of package outlines for semiconductor device packages; Amendment 2
• IEC 60191-2-DB:2012 Mechanical standardization of semiconductor devices - Part 2: Dimensions
• IEC 60191-2:1966/AMD18:2011 Mechanical standardization of semiconductor devices - Part 2: Dimensions
• IEC 60191-6/AMD1:1999 Mechanical standardization of semiconductor devices - Part 6: General rules for the preparation of outline drawings of surface mounted semiconductor device packages; Amendment 1
• IEC 60191-4:2013/AMD1:2018 Mechanical standardization of semiconductor devices - Part 4: Coding system and classification into forms of package outlines for semiconductor device packages; Amendment 1
• IEC 60191-2Y:2000 Mechanical standardization of semiconductor devices - Part 2: Dimensions (23rd Supplement to Publication 60191-2:1966)
• IEC 60191-2:1966/AMD2:2001 Mechanical standardization of semiconductor devices - Part 2: Dimensions; Amendment 2
• IEC 60191-2U:1997 Mechanical standardization of semiconductor devices - Part 2: Dimensions; Supplement 19
• IEC 60191-2T:1996 Mechanical standardization of semiconductor devices - Part 2: Dimensions; Supplement 18
• IEC 60191-2V:1998 Mechanical standardization of semiconductor devices - Part 2: Dimensions; Supplement 20
• IEC 60191-2Z:2000 Mechanical standardization of semiconductor devices - Part 2: Dimensions; Supplement 24
• IEC 60191-2X:1999 Mechanical standardization of semiconductor devices - Part 2: Dimensions; Supplement 22
• IEC 60191-2W:1999 Mechanical standardization of semiconductor devices - Part 2: Dimensions; Supplement 21
• IEC 60191-6-10:2003 Mechanical standardization of semiconductor devices - Part 6-10: General rules for the preparation of outline drawings of surface mounted semiconductor device packages; Dimensions of P-VSON
• IEC 60191-2X/COR1:2000 Mechanical standardization of semiconductor devices - Part 2: Dimensions; Supplement 22; Corrigendum 1
• IEC 60191-2:1966/AMD10:2004 Mechanical standardization of semiconductor devices - Part 2: Dimensions; Amendment 10
• IEC 60191-2:1966/AMD21:2020 Amendment 21 - Mechanical standardization of semiconductor devices - Part 2: Dimensions
• IEC 60191-2:1966/AMD17:2008 Mechanical standardization of semiconductor devices - Part 2: Dimensions; Amendment 17
• IEC 60191-2:1966/AMD8:2003 Amendment 8 - Mechanical standardization of semiconductor devices. Part 2: Dimensions
• IEC 60191-2:1966/AMD12:2006 Mechanical standardization of semiconductor devices - Part 2: Dimensions; Amendment 12
• IEC 60191-2:1966/AMD7:2002 Mechanical standardization of semiconductor devices - Part 2: Dimensions; Amendment 7
• IEC 60191-2:1966/AMD4:2001 Amendment 4 - Mechanical standardization of semiconductor devices - Part 2: Dimensions
• IEC 60191-2:1966/AMD14:2006 Mechanical standardization of semiconductor devices - Part 2: Dimensions; Amendment 14
• IEC 60191-2:1966/AMD9:2003 Mechanical standardization of semiconductor devices - Part 2: Dimensions; Amendment 9
• IEC 60191-2:1966/AMD16:2007 Mechanical standardization of semiconductor devices - Part 2: Dimensions; Amendment 16
• IEC 60191-2X:1999/COR1:2000 Corrigendum 1 - Mechanical standardization of semiconductor devices - Part 2: Dimensions
• IEC 60191-2:1966/AMD1:2001 Amendment 1 - Mechanical standardization of semiconductor devices - Part 2: Dimensions
• IEC 60191-2:1966/AMD15:2006 Mechanical standardization of semiconductor devices - Part 2: Dimensions; Amendment 15
• IEC 60191-2:1966/AMD3:2001 Amendment 3 - Mechanical standardization of semiconductor devices - Part 2: Dimensions
• IEC 60191-2:1966/AMD11:2004 Amendment 11 - Mechanical standardization of semiconductor devices - Part 2: Dimensions
• IEC 60191-2:1966/AMD6:2002 Amendment 6 - Mechanical standardization of semiconductor devices. Part 2: Dimensions
• IEC 60191-2:1966/AMD20:2018 Amendment 20 - Mechanical standardization of semiconductor devices - Part 2: Dimensions
• IEC 60191-2:1966/AMD13:2006 Amendment 13 - Mechanical standardization of semiconductor devices - Part 2: Dimensions
• IEC 63284:2022 Semiconductor devices - Reliability test method by inductive load switching for gallium nitride transistors
• IEC 62373:2006 Bias-temperature stability test for metal-oxide, semiconductor, field-effect transistors (MOSFET)
• IEC 60191-2:1966/AMD19:2012 Mechanical standardization of semiconductor devices - Part 2 : Dimensions; Amendment 19
• IEC 60191-6-18:2010 Mechanical standardization of semiconductor devices - Part 6-18: General rules for the preparation of outline drawings of surface mounted semiconductor device packages - Design guide for ball grid array (BGA)
• IEC 60191-6-18:2010/COR2:2010 Mechanical standardization of semiconductor devices - Part 6-18: General rules for the preparation of outline drawings of surface mounted semiconductor device packages - Design guide for ball grid array (BGA)
• IEC 60191-6-22:2012 Mechanical standardization of semiconductor devices - Part 6-22: General rules for the preparation of outline drawings of surface mounted semiconductor device packages - Design guide for semiconductor packages Silicon Fine-pitch Ball Grid Array and Silico
• IEC 60191-6-18:2010/COR1:2010 Mechanical standardization of semiconductor devices - Part 6-18: General rules for the preparation of outline drawings of surface mounted semiconductor device packages - Design guide for ball grid array (BGA)

NEMA - National Electrical Manufacturers Association, Semiconductor catalysis?

• NEMA RI 6-1959 ELECTROCHEMICAL PROCESSING SEMICONDUCTOR RECTIFIER EQUIPMENT

Korean Agency for Technology and Standards (KATS), Semiconductor catalysis?

• KS L ISO 27447-2011(2016) Fine ceramics (advanced ceramics, advanced technical ceramics)－Test method for antibacterial activity of semiconducting photocatalytic materials
• KS L ISO 27447-2011(2021) Fine ceramics (advanced ceramics, advanced technical ceramics)－Test method for antibacterial activity of semiconducting photocatalytic materials
• KS L ISO 27447:2011 Fine ceramics (advanced ceramics, advanced technical ceramics)－Test method for antibacterial activity of semiconducting photocatalytic materials
• KS L ISO 22197-1:2018 Fine ceramics(advanced ceramics, advanced technical ceramics) — Test method for air-purification performance of semiconducting photocatalytic materials — Part 1: Removal of nitric oxide
• KS L ISO 22197-2:2020 Fine ceramics(advanced ceramics, advanced technical ceramics) —Test method for air-purification performance of semiconducting photocatalytic materials — Part 2: Removal of acetaldehyde
• KS L ISO 22197-3:2020 Fine ceramics(advanced ceramics, advanced technical ceramics) —Test method for air-purification performance of semiconducting photocatalytic materials — Part 3: Removal of toluene
• KS L ISO 22197-4:2020 Fine ceramics(advanced ceramics, advanced technical ceramics) —Test method for air-purification performance of semiconducting photocatalytic materials — Part 4: Removal of formaldehyde
• KS L ISO 22197-1:2008 Fine ceramics (advanced ceramics, advanced technical ceramics)-Test method for air-purification performance of semiconducting photocatalytic materials-Part 1:Removal of nitric oxide
• KS L ISO 22197-1:2022 Fine ceramics(advanced ceramics, advanced technical ceramics) — Test method for air-purification performance of semiconducting photocatalytic materials — Part 1: Removal of nitric oxide
• KS L ISO 22197-5:2020 Fine ceramics(advanced ceramics, advanced technical ceramics) —Test method for air-purification performance of semiconducting photocatalytic materials — Part 5: Removal of methyl mercaptan
• KS L ISO 27448-2011(2021) Fine ceramics(advanced ceramics, advanced technical ceramics)－Test method for self-cleaning performance of semiconducting photocatalytic materials－Measurement of water contact angle
• KS L ISO 27448-2011(2016) Fine ceramics(advanced ceramics, advanced technical ceramics)－Test method for self-cleaning performance of semiconducting photocatalytic materials－Measurement of water contact angle
• KS L ISO 10676:2012 Fine ceramics(advanced ceramics, advanced technical ceramics)－Test method for water purification performance of semiconducting photocatalytic materials by measurement of forming ability of active oxygen
• KS L ISO 10676-2012(2022) Fine ceramics(advanced ceramics, advanced technical ceramics)－Test method for water purification performance of semiconducting photocatalytic materials by measurement of forming ability of active oxyg
• KS L ISO 17168-1:2020 Fine ceramics(advanced ceramics, advanced technical ceramics) —Test method for air-purification performance of semiconducting photocatalytic materials under indoor lighting environment —Part 1: Remova
• KS L ISO 17168-2:2020 Fine ceramics(advanced ceramics, advanced technical ceramics) —Test method for air-purification performance of semiconducting photocatalytic materials under indoor lighting environment —Part 2: Remova
• KS L ISO 17168-3:2020 Fine ceramics(advanced ceramics, advanced technical ceramics) —Test method for air-purification performance of semiconducting photocatalytic materials under indoor lighting environment —Part 3: Remova
• KS L ISO 17168-4:2020 Fine ceramics(advanced ceramics, advanced technical ceramics) —Test method for air-purification performance of semiconducting photocatalytic materials under indoor lighting environment —Part 4: Remova
• KS L ISO 10676-2012(2017) Fine ceramics(advanced ceramics, advanced technical ceramics)－Test method for water purification performance of semiconducting photocatalytic materials by measurement of forming ability of active oxyg
• KS C IEC 60748-2-5:2002 Semiconductor devices－Integrated circuits Part 2：Digital integrated circuits Section 5－Blank detail specification for complementary MOS digital integrated circuits(series 4 000B and 4 000UB)
• KS C IEC 60748-2-4:2002 Semiconductor devices－Integrated circuits－Part 2：Digital integrated circuits－Section 4：Family specification for complementary MOS digital integrated circuits, series 4 000 B and 4 000 UB

Danish Standards Foundation, Semiconductor catalysis?

• DS/EN 62417:2010 Semiconductor devices - Mobile ion tests for metal-oxide semiconductor field effect transistors (MOSFETs)
• DS/EN 62418:2010 Semiconductor devices - Metallization stress void test
• DS/EN 60191-6-16:2007 Mechanical standardization of semiconductor devices - Part 6-16: Glossary of semiconductor tests and burn-in sockets for BGA, LGA, FBGA and FLGA
• DS/EN 60191-4/A2:2002 Mechanical standardization of semiconductor devices - Part 4: Coding system and classification into forms of package outlines for semiconductor device packages
• DS/EN 60191-4:2001 Mechanical standardization of semiconductor devices - Part 4: Coding system and classification into forms of package outlines for semiconductor device packages
• DS/EN 60191-4/A1:2002 Mechanical standardization of semiconductor devices - Part 4: Coding system and classification into forms of package outlines for semiconductor device packages
• DS/EN 60191-6:2010 Mechanical standardization of semiconductor devices - Part 6: General rules for the preparation of outline drawings of surface mounted semiconductor device packages
• DS/EN 60191-6-22:2013 Mechanical standardization of semiconductor devices - Part 6-22: General rules for the preparation of outline drawings of surface mounted semiconductor device packages - Design guide for semiconductor packages Silicon Fine-pitch Ball Grid Array and Silico
• DS/EN 62373:2006 Bias-temperature stability test for metal-oxide, semiconductor, field-effect transistors (MOSFET)
• DS/EN 60191-6-10:2004 Mechanical standardization of semiconductor devices - Part 6-10: General rules for the preparation of outline drawings of surface mounted semiconductor device packages - Dimensions of P-VSON
• DS/EN 60191-6-1:2002 Mechanical standardization of semiconductor devices - Part 6-1: General rules for the preparation of outline drawings of surface mounted semiconductor device packages - Design guide for gull-wing lead terminals
• DS/EN 60191-6-18:2010 Mechanical standardization of semiconductor devices - Part 6-18: General rules for the preparation of outline drawings of surface mounted semiconductor device packages - Design guide for ball grid array (BGA)

ES-UNE, Semiconductor catalysis?

• UNE-EN 62417:2010 Semiconductor devices - Mobile ion tests for metal-oxide semiconductor field effect transistors (MOSFETs) (Endorsed by AENOR in September of 2010.)
• UNE-EN 62418:2010 Semiconductor devices - Metallization stress void test (Endorsed by AENOR in October of 2010.)
• UNE-EN IEC 63364-1:2023 Semiconductor devices - Semiconductor devices for IOT system - Part 1: Test method of sound variation detection (Endorsed by Asociación Española de Normalización in March of 2023.)
• UNE-EN 60191-6-16:2007 Mechanical standardization of semiconductor devices -- Part 6-16: Glossary of semiconductor tests and burn-in sockets for BGA, LGA, FBGA and FLGA (IEC 60191-6-16:2007). (Endorsed by AENOR in October of 2007.)
• UNE-EN 60191-6:2009 Mechanical standardization of semiconductor devices -- Part 6: General rules for the preparation of outline drawings of surface mounted semiconductor device packages (Endorsed by AENOR in April of 2010.)
• UNE-EN 60191-4:2014/A1:2018 Mechanical standardization of semiconductor devices - Part 4: Coding system and classification into forms of package outlines for semiconductor device packages (Endorsed by Asociación Española de Normalización in June of 2018.)
• UNE-EN 60191-4:2014 Mechanical standardization of semiconductor devices - Part 4: Coding system and classification into forms of package outlines for semiconductor device packages (Endorsed by AENOR in May of 2014.)
• UNE-EN 60191-6-22:2013 Mechanical standardization of semiconductor devices - Part 6-22: General rules for the preparation of outline drawings of surface mounted semiconductor device packages - Design guide for semiconductor packages Silicon Fine-pitch Ball Grid Array and Sil...
• UNE-EN 62373:2006 Bias-temperature stability test for metal-oxide, semiconductor, field-effect transistors (MOSFET) (IEC 62373:2006). (Endorsed by AENOR in November of 2006.)
• UNE-EN 60191-6-4:2003 Mechanical standardization of semiconductor devices -- Part 6-4: General rules for the preparation of outline drawings of surface mounted semiconductor device packages - Measuring methods for package dimensions of ball grid array (BGA) (Endorsed by AEN...
• UNE-EN 60191-6-21:2010 Mechanical standardization of semiconductor devices -- Part 6-21: General rules for the preparation of outline drawings of surface mounted semiconductor device packages - Measuring methods for package dimensions of small outline packages (SOP) (Endorse...
• UNE-EN 60191-6-18:2010 Mechanical standardization of semiconductor devices -- Part 6-18: General rules for the preparation of outline drawings of surface mounted semiconductor device packages - Design guide for ball grid array (BGA) (Endorsed by AENOR in May of 2010.)

Lithuanian Standards Office , Semiconductor catalysis?

• LST EN 62417-2010 Semiconductor devices - Mobile ion tests for metal-oxide semiconductor field effect transistors (MOSFETs) (IEC 62417:2010)
• LST EN 60191-6-16-2007 Mechanical standardization of semiconductor devices - Part 6-16: Glossary of semiconductor tests and burn-in sockets for BGA, LGA, FBGA and FLGA (IEC 60191-6-16:2007)
• LST EN 62418-2010 Semiconductor devices - Metallization stress void test (IEC 62418:2010)
• LST EN 60191-4+A1-2002 Mechanical standardization of semiconductor devices -- Part 4: Coding system and classification into forms of package outlines for semiconductor device packages (IEC 60191-4:1999+A1:2001)
• LST EN 60191-4+A1-2002/A2-2002 Mechanical standardization of semiconductor devices. Part 4: Coding system and classification into forms of package outlines for semiconductor device packages (IEC 60191-4:1999/A2:2002)
• LST EN 60191-6-22-2013 Mechanical standardization of semiconductor devices -- Part 6-22: General rules for the preparation of outline drawings of surface mounted semiconductor device packages - Design guide for semiconductor packages Silicon Fine-pitch Ball Grid Array and Silic
• LST EN 60191-6-2010 Mechanical standardization of semiconductor devices - Part 6: General rules for the preparation of outline drawings of surface mounted semiconductor device packages (IEC 60191-6:2009)
• LST EN 60191-4-2014 Mechanical standardization of semiconductor devices - Part 4: Coding system and classification into forms of package outlines for semiconductor device packages (IEC 60191-4:2013)
• LST EN 60191-6-10-2004 Mechanical standardization of semiconductor devices. Part 6-10: General rules for the preparation of outline drawings of surface mounted semiconductor device packages. Dimensions of P-VSON (IEC 60191-6-10:2003)
• LST EN 62373-2006 Bias-temperature stability test for metal-oxide, semiconductor, field-effect transistors (MOSFET) (IEC 62373:2006)

国家市场监督管理总局、中国国家标准化管理委员会, Semiconductor catalysis?

• GB/T 15879.4-2019 Mechanical standardization of semiconductor devices—Part 4: Coding system and classification into forms of package outlines for semiconductor device packages
• GB/T 36646-2018 Equipment for preparation of nitride semiconductor materials by hydride vapor phase epitaxy

AENOR, Semiconductor catalysis?

• UNE-ISO 22197-1:2012 Fine ceramics (advanced ceramics, advanced technical ceramics). Test method for air-purification performance of semiconducting photocatalytic materials. Part 1: Removal of nitric oxide
• UNE 127197-1:2013 Test method application to evaluate the air-purification performance of semiconducting photocatalytic materials soaked into precast concrete products - Part 1: Removal of nitric oxide.
• UNE-EN 60191-6-10:2004 Mechanical standardization of semiconductor devices -- Part 6-10: General rules for the preparation of outline drawings of surface mounted semiconductor device packages - Dimensions of P-VSON
• UNE-EN 60191-6-1:2002 Mechanical standardization of semiconductor devices -- Part 6-1: General rules for the preparation of outline drawings of surface mounted semiconductor device packages - Design guide for gull-wing lead terminals.

General Administration of Quality Supervision, Inspection and Quarantine of the People‘s Republic of China, Semiconductor catalysis?

• GB/T 15652-1995 Generic specification for gas sensors of metal-oxide semiconductor
• GB/T 15653-1995 Measuring methods for gas sensors of metal-oxide semiconductor
• GB/T 4298-1984 The activation analysis method for the determination of elemental impurities in semiconductor silicon materials
• GB/T 42706.2-2023 Long-term storage of electronic components and semiconductor devices Part 2: Degradation mechanisms

Professional Standard - Machinery, Semiconductor catalysis?

• JB/T 8736-1998 Aluminum nitride ceramics substrate intended to be used in power semiconductor modules

RO-ASRO, Semiconductor catalysis?

• STAS CEI 191-4-1992 Mechanical standardization of semiconductor devices. Part 4: Coding system and classification into forms of package outlines for semiconductor devices

工业和信息化部, Semiconductor catalysis?

• SJ/T 9014.8.2-2018 Semiconductor Devices Discrete Devices Part 8-2: Blank Detailed Specification for Superjunction Metal Oxide Semiconductor Field Effect Transistors

American Society for Testing and Materials (ASTM), Semiconductor catalysis?

• ASTM F1211-89(1994)e1 Standard Specification for Semiconductor Device Passivation Opening Layouts

CENELEC - European Committee for Electrotechnical Standardization, Semiconductor catalysis?

• EN 60191-6:2004 Mechanical standardization of semiconductor devices Part 6: General rules for the preparation of outline drawings of surface mounted semiconductor device packages
• EN 60191-4:2014 Mechanical standardization of semiconductor devices - Part 4: Coding system and classification into forms of package outlines for semiconductor device packages (Incorporates Amendment A1: 2018)
• EN 60191-6-18:2010 Mechanical standardization of semiconductor devices - Part 6-18: General rules for the preparation of outline drawings of surface mounted semiconductor device packages - Design guide for ball grid array (BGA)

U.S. Military Regulations and Norms, Semiconductor catalysis?

• ARMY MIL-M-48646 NOTICE 1-1997 MICROCIRCUIT, DIGITAL, SCO/DLA MULTICHIP CMOS
• ARMY MIL-M-48646-1986 MICROCIRCUIT, DIGITAL, SCO/DLA MULTICHIP CMOS
• ARMY MIL-M-63530 NOTICE 1-1997 MICROCIRCUIT, DIGITAL, CMOS (LOGIC)
• ARMY MIL-M-63530 (1)-1987 MICROCIRCUIT, DIGITAL, CMOS (LOGIC)
• ARMY MIL-M-63530-1981 MICROCIRCUIT, DIGITAL, CMOS (LOGIC)
• ARMY MIL-M-63320 A NOTICE 1-1997 MILITARY SPECIFICATION MICROCIRCUIT, DIGITAL, CMOS (INITIAL LOGIC)
• ARMY MIL-M-63320 A (4)-1990 MICROCIRCUIT, DIGITAL, CMOS (INITIAL LOGIC)
• ARMY MIL-M-63320 A-1981 MICROCIRCUIT, DIGITAL, CMOS (INITIAL LOGIC)
• ARMY MIL-M-63321 A NOTICE 1-1997 MICROCIRCUIT, DIGITAL, CMOS (FINAL LOGIC)
• ARMY MIL-I-48632 NOTICE 1-1996 INTEGRATED CIRCUIT, DIGITAL, CMOS CONTROL AND TIMING BASE, MONOLITHIC, SILICON
• ARMY MIL-I-48632 (2)-1993 INTEGRATED CIRCUIT, DIGITAL, CMOS CONTROL AND TIMING BASE, MONOLITHIC, SILICON
• ARMY MIL-I-48632-1986 INTEGRATED CIRCUIT, DIGITAL, CMOS CONTROL AND TIMING BASE, MONOLITHIC, SILICON
• ARMY MIL-I-48634 NOTICE 1-1996 INTEGRATED CIRCUIT, DIGITAL, CMOS LOGIC ARRAY MONOLITHIC SILICON
• ARMY MIL-I-48634 (3)-1993 INTEGRATED CIRCUIT, DIGITAL, CMOS LOGIC ARRAY MONOLITHIC SILICON
• ARMY MIL-I-48634-1986 INTEGRATED CIRCUIT, DIGITAL, CMOS LOGIC ARRAY MONOLITHIC SILICON
• ARMY MIL-M-63321 A (4)-1990 MICROCIRCUIT, DIGITAL, CMOS (FINAL LOGIC)
• ARMY MIL-M-63321 A-1981 MICROCIRCUIT, DIGITAL, CMOS (FINAL LOGIC)
• ARMY MIL-M-63324 A VALID NOTICE 1-1988 MICROCIRCUIT, DIGITAL, CMOS, SPECIAL PURPOSE NOR GATE
• ARMY MIL-M-63324 A (1)-1982 MICROCIRCUIT, DIGITAL, CMOS, SPECIAL PURPOSE NOR GATE
• ARMY MIL-M-63324 A-1981 MICROCIRCUIT, DIGITAL, CMOS, SPECIAL PURPOSE NOR GATE
• ARMY MIL-M-63324 A NOTICE 2-1997 MICROCIRCUIT, DIGITAL, CMOS, SPECIAL PURPOSE NOR GATE

Shaanxi Provincial Standard of the People's Republic of China, Semiconductor catalysis?

• DB61/T 1250-2019 General Specification for Sic (Silicon Carbide) Material Semiconductor Discrete Devices

IEEE - The Institute of Electrical and Electronics Engineers@ Inc., Semiconductor catalysis?

• IEEE 641-1987 STANDARD DEFINITIONS AND CHARACTERIZATION OF METAL NITRIDE OXIDE SEMICONDUCTOR ARRAYS

PH-BPS, Semiconductor catalysis?

• PNS IEC 62373-1:2021 Semiconductor devices - Bias-temperature stability test for metal-ox ide, semiconductor, field-effect transistors (MOSFET) - Part 1: Fast BTI test for MOSFET

Taiwan Provincial Standard of the People's Republic of China, Semiconductor catalysis?

• CNS 8104-1981 Method for Measuring MOSFET Linear Threshold Voltage
• CNS 8106-1981 Method for Measuring MOSFET Saturated Threshold Voltage

Institute of Electrical and Electronics Engineers (IEEE), Semiconductor catalysis?

• ANSI/IEEE Std 641-1987 IEEE Standard Definitions and Characterization of Metal Nitride Oxide Semiconductor Arrays

AT-OVE/ON, Semiconductor catalysis?

• OVE EN IEC 63275-2:2021 Semiconductor devices - Reliability test method for silicon carbide discrete metal-oxide semiconductor field effect transistors - Part 2: Test method for bipolar degradation due to body diode operation (IEC 47/2680/CDV) (english version)
• OVE EN IEC 63275-1:2021 Semiconductor devices - Reliability test method for silicon carbide discrete metal-oxide semiconductor field effect transistors - Part 1: Test method for bias temperature instability (IEC 47/2679/CDV) (english version)

GM North America, Semiconductor catalysis?

• GM GM6078M-1989 Solid Film Lubricant Coatings Resin Bonded MOS2 and PTFE

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