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Semiconductor Oxygen Content

Semiconductor Oxygen Content, Total:499 items.

In the international standard classification, Semiconductor Oxygen Content involves: Semiconducting materials, Semiconductor devices, Integrated circuits. Microelectronics, Non-metalliferous minerals, Optoelectronics. Laser equipment, Electronic components in general, Products of non-ferrous metals, Nuclear energy engineering, Products of the chemical industry, Applications of information technology, Electrical and electronic testing, Valves, Insulating materials, Rectifiers. Convertors. Stabilized power supply, Coals, Testing of metals, Electricity. Magnetism. Electrical and magnetic measurements, Conducting materials, Optics and optical measurements, Air quality, Analytical chemistry, Fuels, Mining and quarrying, Telecommunication terminal equipment, Radiation measurements, Fibre optic communications, Ferroalloys, Inorganic chemicals, Insulating fluids, Materials for aerospace construction, Explosion protection, Mechanical structures for electronic equipment, Products of the textile industry, Structure and structure elements.

HU-MSZT, Semiconductor Oxygen Content

European Committee for Electrotechnical Standardization（CENELEC）, Semiconductor Oxygen Content

EN 62417:2010 Semiconductor devices - Mobile ion tests for metal-oxide semiconductor field effect transistors (MOSFETs)
EN IEC 62969-3:2018 Semiconductor devices - Semiconductor interface for automotive vehicles - Part 3: Shock driven piezoelectric energy harvesting for automotive vehicle sensors
EN 60749-7:2011 Semiconductor devices - Mechanical and climatic test methods - Part 7: Internal moisture content measurement and the analysis of other residual gases
EN 61788-9:2005 Superconductivity Part 9: Measurements for bulk high temperature superconductors - Trapped flux density of large grain oxide superconductors
EN 62373:2006 Bias-temperature stability test for metal-oxide, semiconductor, field-effect transistors (MOSFET)
EN 60747-5-3:2001 Discrete semiconductor devices and integrated circuits Part 5-3: Optoelectronic devices Measuring methods (Incorporates Amendment A1: 2002)

RU-GOST R, Semiconductor Oxygen Content

GOST 26239.7-1984 Semiconductor silicon. Method of oxygen, carbon and nitrogen determination
GOST 7619.5-1981 Fluorite. Method for the determination of sesquioxides
GOST R 50471-1993 Semiconductor photoemitters. Measuring method for halfintensity angle
GOST 18986.10-1974 Semiconductor diodes. Methods for measuring inductance
GOST 18986.12-1974 Semiconductor tunnel diodes. Method for measuring negative conductance of the intrinsic diode
GOST 18986.11-1984 Semiconductor diodes. Total series equivalent resistance measurement methods
GOST 18986.15-1975 Reference diodes. Method of measuring stabilization voltage
GOST 18986.24-1983 Semiconductor diodes. Measurement method of breakdown voltage
GOST 24461-1980 Power semiconductor devices. Test and measurement methods
GOST 2408.3-1995 Solid fuel. Mehods for determination of oxygen content
GOST 19834.0-1975 Semiconductor emitters. Methods for measurement of parameters. General principles
GOST 18986.23-1980 Zener diodes. Methods for measuring spectral noise density
GOST 26222-1986 Ionizing-radiation semiconductor detectors. Methods of parameters measurement
GOST R IEC 748-11-1-2001 Semiconductor devices integrated circuits. Part 11. Section 1. Internal visual examination for semiconductor integrated circuits excluding hybrid circuits
GOST 18986.14-1985 Semiconductor diodes. Methods for measuring differential and slope resistances
GOST 18986.22-1978 Reference diodes. Methods for measuring differential resistance
GOST 19656.5-1974 Semiconductor UHF mixer and detector diodes. Measurement methods of output noise ratio
GOST 19834.4-1979 Semiconductor radiating infra-red diodes. Methods of measurement of radiation power
GOST 18986.8-1973 Semiconductor diodes. Method for measuring reverse recovery time
GOST 19656.0-1974 Semiconductor UHF diodes. Measurement methods of electrical parameters. General conditions
GOST 18986.17-1973 Reference diodes. Method of measuring of temperature coefficient of working voltage
GOST 19834.2-1974 Semiconductor emitters. Methods for measurement of radiant intensity and radiance
GOST 19656.4-1974 Semiconductor UHF mixer diodes. Measurement methods of conversion losses

Defense Logistics Agency, Semiconductor Oxygen Content

DLA SMD-5962-96665 REV D-2005 MICROCIRCUIT, DIGITAL, RADIATION HARDENED, CMOS, HEX VOLTAGE LEVEL SHIFTER FOR TTL-TO-CMOS OR CMOS-TO- CMOS OPERATION, MONOLITHIC SILICON
DLA SMD-5962-77037 REV G-2005 MICROCIRCUIT, DIGITAL, CMOS, 4-BIT MAGNITUDE COMPARATOR, MONOLITHIC SILICON
DLA SMD-5962-94532-1994 MICROCIRCUIT, CMOS, 64-BIT MICROPROCESSOR
DLA SMD-5962-96736-1996 MICROCIRCUIT, DIGITAL, RADIATION HARDENED, CMOS, HIGH SPEED 8-BIT BIDIRECTIONAL CMOS/TTL INTERFACE LEVEL CONVERTER, MONOLITHIC SILICON
DLA SMD-5962-77044 REV F-2005 MICROCIRCUIT, DIGITAL, CMOS, NOR GATES, MONOLITHIC SILICON
DLA SMD-5962-77027 REV C-1982 MICROCIRCUITS, DIGITAL, CMOS, HEX INVERTER, MONOLITHIC SILICON
DLA SMD-5962-77053 REV M-2005 MICROCIRCUIT, CMOS, QUAD ANALOG SWITCH, MONOLITHIC SILICON
DLA SMD-5962-84043 REV E-2005 MICROCIRCUIT, DIGITAL, HIGH-SPEED CMOS, EXCLUSIVE NOR GATE, MONOLITHIC SILICON
DLA SMD-5962-84069 REV F-2005 MICROCIRCUIT, DIGITAL, CMOS, BUS CONTROLLER, MONOLITHIC SILICON
DLA SMD-5962-77034 REV X-2006 MICROCIRCUIT, LINEAR, ADJUSTABLE VOLTAGE REGULATOR, MONOLITHIC SILICON
DLA SMD-5962-93007 REV D-1996 MICROCIRCUIT, DIGITAL, CMOS, TWO DIMENSIONAL CONVOLVER MONOLITHIC SILICON
DLA SMD-5962-96674 REV C-2000 MICROCIRCUIT, DIGITAL, RADIATION HARDENED CMOS, ANALOG 4 BIT MAGNITUDE COMPARATOR, MONOLITHIC SILICON
DLA SMD-5962-77023 REV F-2005 MICROCIRCUIT, DIGITAL, CMOS, DUAL BINARY UP-COUNTER, MONOLITHIC SILICON
DLA SMD-5962-81019 REV B-1984 MICROCIRCUITS, DIGITAL, CMOS, QUAD D LATCH, MONOLITHIC SILICON
DLA SMD-5962-78029 REV H-2005 MICROCIRCUIT, DIGITAL, CMOS, ENCODER- DECODER, MONOLITHIC SILICON
DLA SMD-5962-94533-1994 MICROCIRCUIT, DIGITAL, CMOS, 32-BIT MICROPROCESSOR, MONOLITHIC SILICON
DLA SMD-5962-87686 REV D-1999 MICROCIRCUIT, DIGITAL, CMOS, 16 X 16 MULTIPLIER, MONOLITHIC SILICON
DLA SMD-5962-86013 REV D-2002 MICROCIRCUIT, DIGITAL, HIGH SPEED CMOS, 4-BIT MAGNITUDE COMPARATOR, MONOLITHIC SILICON
DLA SMD-5962-86818 REV D-2005 MICROCIRCUIT, DIGITAL, HIGH SPEED CMOS, 8-BIT MAGNITUDE COMPARATOR, MONOLITHIC SILICON
DLA SMD-5962-86857 REV A-2003 MICROCIRCUIT, DIGITAL, HIGH SPEED CMOS, 8-BIT MAGNITUDE COMPARATOR, MONOLITHIC SILICON
DLA SMD-5962-90916 REV A-1998 MICROCIRCUITS, DIGITAL, ADVANCED CMOS, 8-BIT MAGNITUDE COMPARATOR, MONOLITHIC SILICON
DLA SMD-5962-06208-2006 MICROCIRCUIT, DIGITAL, CMOS, DIGITAL SIGNAL PROCESSOR, MONOLITHIC SILICON
DLA SMD-5962-84052 REV D-1990 MICROCIRCUITS, DIGITAL, CMOS, 16 BIT MICROPROCESSOR, MONOLITHIC SILICON
DLA SMD-5962-84068 REV E-2005 MICROCIRCUIT, DIGITAL, CMOS, CLOCK GENERATOR DRIVER, MONOLITHIC SILICON
DLA SMD-5962-77024 REV F-2005 MICROCIRCUIT, DIGITAL, CMOS, QUAD 2-INPUT AND GATE, MONOLITHIC SILICON
DLA SMD-5962-77036 REV D-2005 MICROCIRCUIT, DIGITAL, CMOS, QUAD 2-INPUT AND GATE, MONOLITHIC SILICON
DLA SMD-5962-77051 REV F-2005 MICROCIRCUIT, DIGITAL, CMOS, TRIPLE 3-INPUT AND GATE, MONOLITHIC SILICON
DLA SMD-5962-77059 REV E-2005 MICROCIRCUIT, DIGITAL, CMOS, DUAL 4-INPUT AND GATE, MONOLITHIC SILICON
DLA SMD-5962-77060 REV E-2005 MICROCIRCUIT, DIGITAL, CMOS, DUAL 4-INPUT OR GATE, MONOLITHIC SILICON
DLA SMD-5962-79012 REV A-1986 MICROCIRCUITS, DIGITAL, CMOS, STATIC SHIFT REGISTER, MONOLITHIC SILICON
DLA SMD-5962-79013 REV F-2005 MICROCIRCUIT, DIGITAL, CMOS, BUFFERED TRIPLE 3-INPUT NAND GATE, MONOLITHIC SILICON
DLA SMD-5962-79014 REV B-1987 MICROCIRCUIT, DIGITAL, CMOS, HEX INVERTER BUFFER, MONOLITHIC SILICON
DLA SMD-5962-89638-1989 MICROCIRCUIT, LINEAR, CMOS CURRENT MODE CONTROLLER, MONOLITHIC SILICON
DLA SMD-5962-89711 REV B-2006 MICROCIRCUIT, DIGITAL, CMOS 64-BIT OUTPUT CORRELATOR, MONOLITHIC SILICON
DLA SMD-5962-94642-1994 MICROCIRCUIT, DIGITAL, CMOS, ENHANCED MULTI-FUNCTIONAL PERIPHERAL, MONOLITHIC SILICON
DLA SMD-5962-89725 REV A-1995 MIRCOCIRCUIT, DIGITAL, CMOS, ASYNCHRONOUS, SERIAL CONTROLLER, MONOLITHIC SILICON
DLA SMD-5962-89877 REV C-2004 MICROCIRCUIT, LINEAR, CMOS, DUAL, RS232, TRANSCEIVER, MONOLITHIC SILICON
DLA SMD-5962-89982 REV B-2004 MICROCIRCUIT, DIGITAL, CHMOS, 16-BIT MICROCONTROLLER, MONOLITHIC SILICON
DLA SMD-5962-90526 REV M-2004 MICROCIRCUIT, DIGITAL, CMOS, DIGITAL SIGNAL PROCESSOR, MONOLITHIC SILICON
DLA SMD-5962-92331-1993 MICROCIRCUIT, DIGITAL, CMOS, COORDINATE TRANSFORMER, 16X16 BIT, MONOLITHIC SILICON
DLA SMD-5962-90657 REV A-2006 MICROCIRCUIT, DIGITAL, CMOS, UNIVERSAL SERIAL CONTROLLER, MONOLITHIC SILICON
DLA SMD-5962-90678 REV A-2005 MICROCIRCUIT, DIGITAL, CMOS, 16-BIT, MICROPROCESSOR, MONOLITHIC SILICON
DLA SMD-5962-93006 REV B-1999 MICROCIRCUIT, DIGITAL, CMOS, DIGITAL SIGNAL PROCESSOR, MONOLITHIC SILICON
DLA SMD-5962-93183 REV C-2002 MICROCIRCUIT, LINEAR, BUS TRANSCEIVER, DIFFERENTIAL, MONOLITHIC SILICON
DLA SMD-5962-93228 REV B-2005 MICROCIRCUIT, DIGITAL, CMOS, TEST BUS CONTROLLER, MONOLITHIC SILICON
DLA SMD-5962-88503 REV J-2003 MICROCIRCUIT, LINEAR, DUAL MOSFET DRIVERS, MONOLITHIC SILICON
DLA SMD-5962-96709 REV C-2000 MICROCIRCUIT, DIGITAL, RADIATION HARDENED ADVANCED CMOS, 8-BIT MAGNITUDE COMPARATOR, MONOLITHIC SILICON
DLA SMD-5962-90741 REV B-2006 MICROCIRCUIT, DIGITAL, BIPOLAR CMOS, OCTAL BUFFER AND LINE DRIVERS/MOS DRIVER WITH THREE-STATE OUTPUTS, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
DLA SMD-5962-90744 REV B-2006 MICROCIRCUIT, DIGITAL, BIPOLAR CMOS, 10-BIT BUS/MOS MEMORY DRIVER WITH THREE-STATE OUTPUTS, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
DLA SMD-5962-79018 REV C-2006 MICROCIRCUIT, MEMORY, DIGITAL, CMOS 128 X 8-BIT RANDOM ACCESS MEMORY (RAM), MONOLITHIC SILICON
DLA SMD-5962-87660 REV A-2001 MICROCIRCUITS, LINEAR, MOSFET DRIVER, DUAL POWER
DLA SMD-5962-84062 REV G-2002 MICROCIRCUIT, DIGITAL, HIGH SPEED CMOS, 3-TO-8 LINE DECODER, MONOLITHIC SILICON
DLA SMD-5962-84065 REV E-2005 MICROCIRCUIT, DIGITAL, CMOS, PROGRAMMABLE INTERVAL TIMER, MONOLITHIC SILICON
DLA SMD-5962-84066 REV G-2006 MICROCIRCUIT, DIGITAL, CMOS, PROGRAMMABLE PERIPHERAL INTERFACE, MONOLITHIC SILICON
DLA SMD-5962-85149 REV A-1988 MICROCIRCUIT, NMOS, BUS CONTROLLER, MONOLITHIC SILICON
DLA SMD-5962-78008 REV H-2005 MICROCIRCUIT, DIGITAL, MOS CLOCK DRIVERS, MONOLITHIC SILICON
DLA SMD-5962-79017-1979 MICROCIRCUITS, CMOS, UNIVERSAL ASYNCHRONOUS RECEIVER/TRANSMITTER MONOLITHIC SILICON GATE
DLA SMD-5962-84040 REV F-2005 MICROCIRCUIT, DIGITAL, HIGH-SPEED CMOS, 8-INPUT NAND GATE, MONOLITHIC SILICON
DLA SMD-5962-03245 REV A-2004 MICROCIRCUIT, DIGITAL, CMOS, FIXED-POINT DIGITAL SIGNAL PROCESSOR, MONOLITHIC SILICON
DLA SMD-5962-94513 REV C-2006 MICROCIRCUIT, LINEAR, LOW POWER, PULSE WIDTH MODULATOR, MONOLITHIC SILICON
DLA SMD-5962-94514 REV B-2004 MICROCIRCUIT, LINEAR, MICROPROCESSOR SUPERVISORY CIRCUIT, MONOLITHIC SILICON
DLA SMD-5962-94537-1994 MICROCIRCUIT, DIGITAL, CMOS, 8-BIT MEMORY PROCESSING UNIT, MONOLITHIC SILICON
DLA SMD-5962-91641 REV A-2005 MICROCIRCUIT, DIGITAL, CMOS, REAL TIME CLOCK, MONOLITHIC SILICON
DLA SMD-5962-89959 REV C-1996 MICROCIRCUIT, DIGITAL, CMOS, 16-BIT CASCADABLE ALU, MONOLITHIC SILICON
DLA SMD-5962-89990 REV A-2005 MICROCIRCUIT, DIGITAL, HIGH SPEED CMOS, PHASE- LOCKED LOOP FILTER, MONOLITHIC SILICON
DLA SMD-5962-94745-1995 MICROCIRCUIT, MEMORY, DIGITAL, CMOS 256K X 1-BIT SERIAL CONFIGURATION PROM, MONOLITHIC SILICON
DLA SMD-5962-88572 REV B-1991 MICROCIRCUIT, DIGITAL, NMOS INTERRUPT GENERATOR, MONOLITHIC SILICON
DLA SMD-5962-90544 REV A-2003 MICROCIRCUIT, DIGITAL, CMOS, HIGH PERFORMANCE MICROCONTROLLER MONOLITHIC SILICON
DLA SMD-5962-90640 REV C-2003 MICROCIRCUIT, DIGITAL, CMOS, QUAD BILATERAL SWITCH, MONOLITHIC SILICON
DLA SMD-5962-90708 REV A-1996 MICROCIRCUIT, DIGITAL, CMOS, 8 X 8 MULTIPLIER, MONOLITHIC SILICON
DLA SMD-5962-93260 REV B-1996 MICROCIRCUIT, DIGITAL, CMOS, 12 X 10-BIT MATRIX MULTIPLIER, MONOLITHIC SILICON
DLA SMD-5962-95826 REV C-2003 MICROCIRCUIT, DIGITAL, RADIATION HARDENED, CMOS, NOR GATE, MONOLITHIC SILICON
DLA SMD-5962-88595 REV A-1989 MICROCIRCUITS, DIGITAL, NMOS, 256 X 4 STATIC RAM (SRAM) MONOLITHIC SILICON
DLA SMD-5962-88770 REV H-2003 MICROCIRCUIT, LINEAR, SINGLE POWER MOSFET DRIVER, MONOLITHIC SILICON
DLA SMD-5962-84044 REV F-2005 MICROCIRCUIT, DIGITAL, HIGH-SPEED CMOS, DUAL 4-INPUT NOR GATE, MONOLITHIC SILICON
DLA SMD-5962-84045 REV H-2002 MICROCIRCUIT, DIGITAL, HIGH-SPEED CMOS, QUAD 2-INPUT OR GATE, MONOLITHIC SILICON
DLA SMD-5962-84048 REV F-2006 MICROCIRCUIT, DIGITAL, HIGH-SPEED CMOS, TRIPLE 3-INPUT AND GATE, MONOLITHIC SILICON
DLA SMD-5962-84064 REV E-2005 MICROCIRCUIT, DIGITAL, HIGH-SPEED CMOS, 10-TO-4 LINE PRIORITY ENCODER, MONOLITHIC SILICON
DLA SMD-5962-84067 REV D-2005 MICROCIRCUIT, DIGITAL, CMOS, OCTAL LATCHING BUS DRIVER, MONOLITHIC SILICON
DLA SMD-5962-77026 REV B-1984 MICROCIRCUITS, DIGITAL CMOS, QUAD 3-STATE R/S LATCHES, MONOLITHIC SILICON
DLA SMD-5962-77035-1977 MICROCIRCUITS, DIGITAL, CMOS, 4-BIT LATCH, 4-TO-16 LINE DECODER
DLA SMD-5962-77056-1977 MICROCIRCUITS, DIGITAL, CMOS, HEX, OPEN DRAIN, N-CHANNEL BUFFERS
DLA SMD-5962-85003 REV D-2005 MICROCIRCUIT, DIGITAL, HIGH-SPEED CMOS, 14 STAGE BINARY COUNTER, MONOLITHIC SILICON
DLA SMD-5962-85004 REV E-2002 MICROCIRCUIT, DIGITAL, HIGH-SPEED CMOS, 12 STAGE BINARY COUNTER, MONOLITHIC SILICON
DLA SMD-5962-85015 REV E-2005 MICROCIRCUIT, DIGITAL, CMOS, SERIAL CONTROLLER INTERFACE, MONOLITHIC SILICON
DLA SMD-5962-85016 REV D-2007 MICROCIRCUIT, DIGITAL, CMOS, PROGRAMMABLE INTERRUPT CONTROLLER, MONOLITHIC SILICON
DLA SMD-5962-85063 REV C-2005 MICROCIRCUIT, MICROPROCESSOR, DIGITAL, N-CHANNEL, 16-BIT MICROCONTROLLER, MONOLITHIC SILICON
DLA SMD-5962-77058 REV G-2005 MICROCIRCUIT, DIGITAL, CMOS, 12-BIT BINARY COUNTER, MONOLITHIC SILICON
DLA SMD-5962-03251-2004 MICROCIRCUIT, LINEAR, CMOS, RESOLVER TO DIGITAL CONVERTER, MONOLITHIC SILICON
DLA SMD-5962-90997-1991 MICROCIRCUIT, DIGITAL, CHMOS BUS CONTROLLER, MONOLITHIC SILICON
DLA SMD-5962-94517 REV C-2004 MICROCIRCUIT, LINEAR, WIDEBAND, VARIABLE GAIN AMPLIFIER, MONOLITHIC SILICON
DLA SMD-5962-89616 REV C-2001 MICROCIRCUIT, LINEAR, CMOS 8-BIT A/D CONVERTER, MONOLITHIC SILICON
DLA SMD-5962-87609 REV E-2007 MICROCIRCUIT, DIGITAL, ADVANCED CMOS, HEX INVERTER, MONOLITHIC SILICON
DLA SMD-5962-89652-1990 MICROCIRCUITS, DIGITAL, FAST CMOS, QUAD DUAL-PORT REGISTER, MONOLITHIC SILICON
DLA SMD-5962-89674 REV C-2001 MICROCIRCUITS, LINEAR, CMOS, 14-BIT, ANALOG-TO-DIGITAL CONVERTER, MONOLITHIC SILICON
DLA SMD-5962-89676 REV C-2001 MICROCIRCUIT, LINEAR, CMOS, 16-BIT, ANALOG-TO-DIGITAL CONVERTER, MONOLITHIC SILICON
DLA SMD-5962-89679 REV B-2001 MICROCIRCUIT, LINEAR, CMOS 12-BIT ANALOG-TO-DIGITAL CONVERTER, MONOLITHIC SILICON
DLA SMD-5962-89695-1990 MICROCIRCUITS, DIGITAL, HIGH SPEED CMOS, DUAL J-K FLIP FLOP, MONOLITHIC SILICON
DLA SMD-5962-92026-1992 MICROCIRCUIT, DIGITAL, CMOS, FIXED POINT PROCESSOR, MONOLITHIC SILICON
DLA SMD-5962-94709-1994 MICROCIRCUIT, LINEAR, CMOS, BANG-BANG CONTROLLER, MONOLITHIC SILICON
DLA SMD-5962-87744-1987 MICROCIRCUIT, DIGITAL, 1M (64K X 16) BIT, NMOS, UVEPROM, MONOLITHIC SILICON
DLA SMD-5962-92103-1992 MICROCIRCUIT, DIGITAL, CMOS, FLOATING POINT PROCESSOR, MONOLITHIC SILICON
DLA SMD-5962-89954 REV A-2007 MICROCIRCUIT, DIGITAL, HIGH-SPEED CMOS, DUAL SYNCHRONOUS COUNTER, MONOLITHIC SILICON
DLA SMD-5962-90525 REV B-2003 MICROCIRCUIT, DIGITAL, CMOS, UNIVERSAL ASYNCHRONOUS RECEIVER TRANSMITTER, MONOLITHIC SILICON
DLA SMD-5962-90543 REV D-2006 MICROCIRCUIT, DIGITAL, CMOS, PROGRAMMABLE DMA CONTROLLER, MONOLITHIC SILICON
DLA SMD-5962-88619 REV E-2005 MICROCIRCUIT, DIGITAL, CMOS, SIGNAL PROCESSOR, MONOLITHIC SILICON
DLA SMD-5962-85528-1986 MICROCIRCUIT, DIGITAL, CMOS, BUS ARBITER, MONOLITHIC SILICON
DLA SMD-5962-93008-1994 MICROCIRCUIT, MEMORY, DIGITAL, CMOS 16K X 9 FIFO, MONOLITHIC SILICON
DLA SMD-5962-93109-1993 MICROCIRCUIT, DIGITAL, CMOS, HIGH INTEGRATION EMBEDDED PROCESSOR, MONOLITHIC SILICON
DLA SMD-5962-88739 REV G-2005 MICROCIRCUIT, DIGITAL, CMOS, 8 X 8 MULTIPLIER, MONOLITHIC SILICON
DLA SMD-5962-93150 REV A-1994 MICROCIRCUIT, DIGITAL, CMOS, 96-BIT FLOATING POINT DUAL PORT PROCESSOR, MONOLITHIC SILICON
DLA SMD-5962-93152 REV B-2006 MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 32K X 9 FIFO, MONOLITHIC SILICON
DLA SMD-5962-93179 REV B-2002 MICROCIRCUIT, LINEAR, A/D CONVERTER, 12-BIT, CMOS, MONOLITHIC SILICON
DLA SMD-5962-86880 REV C-2003 MICROCIRCUIT, LINEAR, CMOS ARINC BUS INTERFACE, MONOLITHIC SILICON
DLA SMD-5962-89503 REV H-2004 MICROCIRCUIT, LINEAR, CMOS, PRECISION TIMERS, MONOLITHIC SILICON
DLA SMD-5962-90985 REV B-2004 MICROCIRCUIT, DIGITAL, ADVANCED CMOS, 8-BIT MAGNITUDE COMPARATOR WITH ENABLE, MONOLITHIC SILICON
DLA SMD-5962-90939 REV C-2006 MICROCIRCUIT, DIGITAL, BIPOLAR CMOS, OCTAL BUFFER AND LINE DRIVER/MOS DRIVER WITH INVERTED THREE-STATE OUTPUTS, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
DLA SMD-5962-84041 REV G-2002 MICROCIRCUIT, DIGITAL, HIGH-SPEED CMOS, QUAD 2-INPUT NOR GATE, MONOLITHIC SILICON
DLA SMD-5962-84042 REV G-2002 MICROCIRCUIT, DIGITAL, HIGH-SPEED CMOS, TRIPLE 3-INPUT NOR GATE, MONOLITHIC SILICON
DLA SMD-5962-84046 REV F-2002 MICROCIRCUIT, DIGITAL, HIGH-SPEED CMOS, QUAD 2-INPUT EXCLUSIVE-OR GATE, MONOLITHIC SILICON
DLA SMD-5962-84047 REV F-2002 MICROCIRCUIT, DIGITAL, HIGH-SPEED CMOS, QUAD 2-INPUT POSITIVE AND GATE, MONOLITHIC SILICON
DLA SMD-5962-85030 REV H-2007 MICROCIRCUIT, HYBRID, LINEAR, PRECISION VOLTAGE REFERENCES, THIN FILM
DLA SMD-5962-79016 REV B-1992 MICROCIRCUIT, DIGITAL, CMOS, 1-TO-64 BIT SHIFT REGISTER, MONOLITHIC SILICON
DLA SMD-5962-84037 REV H-2002 MICROCIRCUIT, DIGITAL, HIGH-SPEED CMOS, QUAD 2-INPUT NAND GATE, MONOLITHIC SILICON
DLA SMD-5962-84038 REV F-2002 MICROCIRCUIT, DIGITAL, HIGH-SPEED CMOS, TRIPLE 3-INPUT NAND GATE, MONOLITHIC SILICON
DLA SMD-5962-84039 REV G-2006 MICROCIRCUIT, DIGITAL, HIGH-SPEED CMOS, DUAL 4-INPUT NAND GATE, MONOLITHIC SILICON
DLA SMD-5962-89567 REV B-2007 MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 2K X 9 FIFO, MONOLITHIC SILICON
DLA SMD-5962-89568 REV K-2003 MICROCIRCUITS, MEMORY, DIGITAL, CMOS, 4K X 9 FIFO, MONOLITHIC SILICON
DLA SMD-5962-94512 REV C-2004 MICROCIRCUIT, LINEAR, CMOS VIDEO MULTIPLEXER/AMPLIFIER, MONOLITHIC SILICON
DLA SMD-5962-94542-1994 MICROCIRCUIT, DIGITAL, CMOS, 32-BIT LOCAL AREA NETWORK COPROCESSOR, MONOLITHIC SILICON
DLA SMD-5962-94567-1996 MICROCIRCUIT, MEMORY, DIGITAL, CMOS, X 9 CLOCKED FIFO'S, MONOLITHIC SILICON
DLA SMD-5962-87577 REV B-2005 MICROCIRCUIT, CMOS, OCTAL BUS TRANSCEIVER, MONOLITHIC SILICON
DLA SMD-5962-87597 REV B-2005 MICROCIRCUIT, UNIVERSAL INTERRUPT CONTROLLER, N-CHANNEL MOS, MONOLITHIC SILICON
DLA SMD-5962-89665-1989 MICROCIRCUIT, DIGITAL, FAST, CMOS, 9-BIT WIDE BUFFERED REGISTERS, MONOLITHIC SILICON
DLA SMD-5962-94604 REV A-2002 MICROCIRCUIT, LINEAR, CMOS, DUAL MICROPOWER OPERATIONAL AMPLIFIER, MONOLITHIC SILICON
DLA SMD-5962-89715 REV B-1998 MICROCIRCUIT, DIGITAL, CMOS, IMAGE RESAMPLING SEQUENCER, MONOLITHIC SILICON
DLA SMD-5962-87667 REV C-1993 MICROCIRCUIT, HIGH PERFORMANCE CMOS BUS BUFFERS, MONOLITHIC SILICON
DLA SMD-5962-89726 REV D-2006 MICROCIRCUIT, DIGITAL, CMOS, I/O EXPANDED MICROCONTROLLER, MONOLITHIC SILICON
DLA SMD-5962-92042 REV F-2005 MICROCIRCUIT, LINEAR, CMOS, MULTIPLEXER, MONOLITHIC SILICON
DLA SMD-5962-89840 REV D-2007 MICROCIRCUIT, MEMORY, DIGITAL, CMOS, EE PROGRAMMABLE ARRAY LOGIC, MONOLITHIC SILICON
DLA SMD-5962-92106-1993 MICROCIRCUIT, DIGITAL, CMOS, ADDRESS PROCESSOR 2, MONOLITHIC SILICON
DLA SMD-5962-88501 REV G-2007 MICROCIRCUIT, DIGITAL, CMOS, 16-BIT MICROPROCESSOR, MONOLITHIC SILICON
DLA SMD-5962-88547 REV B-2005 MICROCIRCUIT, DIGITAL, NMOS, NUMERIC DATA PROCESSOR, MONOLITHIC SILICON
DLA SMD-5962-90518 REV A-1992 MICROCIRCUITS, DIGITAL, CMOS PROGRAMMABLE BIT-RATE GENERATOR MONOLITHIC SILICON
DLA SMD-5962-88599-1988 MICROCIRCUITS, DIGITAL, CMOS, TIMING CONTROL UNIT, MONOLITHIC SILICON
DLA SMD-5962-88612 REV A-1990 MICROCIRCUIT, DIGITAL, CMOS, 16-BIT MICROPROCESSOR, MONOLITHIC SILICON
DLA SMD-5962-93105 REV C-1996 MICROCIRCUIT, DIGITAL, CMOS, 32-BIT HIGH INTEGRATION MICROPROCESSOR, MONOLITHIC SILICON
DLA SMD-5962-88750 REV A-2002 MICROCIRCUIT, LINEAR, CMOS, QUAD ANALOG SWITCH, MONOLITHIC SILICON
DLA SMD-5962-93170 REV A-1996 MICROCIRCUIT, DIGITAL, CMOS, 8-16 BIT PARALLEL INTERFACE/TIMER MONOLITHIC SILICON
DLA SMD-5962-93180 REV A-2002 MICROCIRCUIT, LINEAR, CMOS, QUAD, SPDT ANALOG SWITCH, MONOLITHIC SILICON
DLA SMD-5962-93182 REV D-2004 MICROCIRCUIT, LINEAR, RAIL-TO-RAIL, QUAD OPERATIONAL AMPLIFIER, MONOLITHIC SILICON
DLA SMD-5962-93255 REV A-2002 MICROCIRCUIT, LINEAR, CMOS QUAD, SPST ANALOG SWITCH, MONOLITHIC SILICON
DLA SMD-5962-96621 REV E-2005 MICROCIRCUIT, DIGITAL, RADIATION HARDENED, CMOS, NAND GATES, MONOLITHIC SILICON
DLA SMD-5962-96654 REV C-2003 MICROCIRCUIT, DIGITAL, RADIATION HARDENED, CMOS, OR GATE, MONOLITHIC SILICON
DLA SMD-5962-96655 REV C-2003 MICROCIRCUIT, DIGITAL, RADIATION HARDENED, CMOS, AND GATE, MONOLITHIC SILICON
DLA SMD-5962-96803-1996 MICROCIRCUIT, DIGITAL, ADVANCED HIGH SPEED CMOS, HEX INVERTER, MONOLITHIC SILICON
DLA SMD-5962-96804 REV B-1997 MICROCIRCUIT, DIGITAL, ADVANCED HIGH SPEED CMOS HEX INVERTER, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
DLA SMD-5962-96805 REV A-2005 MICROCIRCUIT, DIGITAL, ADVANCED HIGH SPEED CMOS, HEX INVERTER, MONOLITHIC SILICON
DLA SMD-5962-95794 REV B-2004 MICROCIRCUIT, DIGITAL, RADIATION HARDENED, HIGH SPEED CMOS, OCTAL TRANSPARENT LATCH WITH THREE-STATE OUTPUTS, MONOLITHIC SILICON
DLA SMD-5962-95652 REV C-2000 MICROCIRCUIT, DIGITAL, RADIATION HARDENED, ADVANCED CMOS, TRIPLE THREE-INPUT NAND GATE, MONOLITHIC SILICON
DLA SMD-5962-95768 REV B-2000 MICROCIRCUIT, DIGITAL, RADIATION HARDENED, HIGH SPEED CMOS, 4-BIT MAGNITUDE COMPARATOR, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
DLA SMD-5962-84090 REV D-2005 MICROCIRCUIT, DIGITAL, HIGH-SPEED CMOS, QUAD THREE-STATE BIDIRECTIONAL TRANSCEIVER, MONOLITHIC SILICON
DLA SMD-5962-84092 REV D-2002 MICROCIRCUIT, DIGITAL, HIGH SPEED CMOS, DUAL 2-LINE TO 4-LINE DECODER, MONOLITHIC SILICON
DLA SMD-5962-77055 REV B-1981 MICROCIRCUITS, DIGITAL, CMOS DUAL, RETRIGGERABLE/RESETTABLE MONOSTABLE MULTIVIBRATOR, MONOLITHIC SILICON
DLA SMD-5962-82022 REV A-2001 MICROCIRCUIT, DIGITAL, CMOS, HEX D FLIP-FLOP, MONOLITHIC SILICON
DLA SMD-5962-89596 REV D-2004 MICROCIRCUIT, DIGITAL, NMOS, 16-BIT MICROCONTROLLER, MONOLITHIC SILICON
DLA SMD-5962-91513-1993 MICROCIRCUIT, DIGITAL, HIGH-SPEED CMOS, AND-OR-INVERT GATES, MONOLITHIC SILICON
DLA SMD-5962-94511 REV A-1996 MICROCIRCUIT, MEMORY, CMOS, 4K X 9 PARALLEL SYNCHRONOUS FIFO, MONOLITHIC SILICON
DLA SMD-5962-94523 REV A-1996 MICROCIRCUIT, DIGITAL, CMOS, 16 X 16 BIT PARALLEL MULTIPLIER, MONOLITHIC SILICON
DLA SMD-5962-94524 REV A-2007 MICROCIRCUIT, MEMORY, DIGITAL, CMOS, ONE-TIME PROGRAMMABLE LOGIC ARRAY, MONOLITHIC SILICON
DLA SMD-5962-94564-1994 MICROCIRCUIT, DIGITAL, CMOS, 24-BIT GENERAL PURPOSE DIGITAL SIGNAL PROCESSOR, MONOLITHIC SILICON
DLA SMD-5962-89653 REV A-1991 MICROCIRCUIT, LINEAR, CMOS, 8-BIT VIDEO D/A CONVERTER, MONOLITHIC SILICON
DLA SMD-5962-89655 REV B-2004 MICROCIRCUIT, LINEAR, 12-BIT CMOS, HIGH-SPEED A/D CONVERTER, MONOLITHIC SILICON
DLA SMD-5962-89657 REV B-2001 MICROCIRCUIT, LINEAR, DUAL, CMOS, 12-BIT, D/A CONVERTER, MONOLITHIC SILICON
DLA SMD-5962-91623 REV F-2005 MICROCIRCUIT, DIGITAL, CMOS, GRAPHICS SYSTEM PROCESSOR, MONOLITHIC SILICON
DLA SMD-5962-94608-1994 MICROCIRCUIT, DIGITAL, CMOS, 12-BIT CASCADABLE MULTIPLIER-SUMMER, MONOLITHIC SILICON
DLA SMD-5962-89716 REV B-1996 MICROCIRCUIT, DIGITAL, CMOS, 4 X 16-BIT MULTILEVEL PIPELINE REGISTER, MONOLITHIC SILICON
DLA SMD-5962-89755 REV D-2007 MICROCIRCUIT, MEMORY, DIGITAL, CMOS, PROGRAMMABLE LOGIC ARRAY, MONOLITHIC SILICON
DLA SMD-5962-92094 REV C-2004 MICROCIRCUIT, LINEAR, DUAL, CMOS, OPERATIONAL AMPLIFIER, MONOLITHIC SILICON
DLA SMD-5962-88543 REV C-2006 MICROCIRCUIT, DIGITAL, FAST CMOS, 8-BIT IDENTITY COMPARATOR, TTL COMPATIBLE, MONOLITHIC SILICON
DLA SMD-5962-90504 REV C-1997 MICROCIRCUIT, DIGITAL, CMOS, BINARY FILTER AND TEMPLATE MATCHER, MONOLITHIC SILICON
DLA SMD-5962-88568-1988 MICROCIRCUITS, DIGITAL, NMOS, SINGLE COMPONENT, 8-BIT MICROCOMPUTER, MONOLITHIC SILICON
DLA SMD-5962-92252 REV D-2002 MICROCIRCUIT, MEMORY, DIGITAL, CMOS 5000 GATE PROGRAMMABLE LOGIC ARRAY, MONOLITHIC SILICON
DLA SMD-5962-95599 REV B-1999 MICROCIRCUIT, MEMORY, DIGITAL, CMOS, FIELD PROGRAMMABLE GATE ARRAY 4000 GATES, MONOLITHIC SILICON
DLA SMD-5962-88642 REV A-2005 MICROCIRCUIT, DIGITAL, CMOS, PROCESSOR INTERFACE CIRCUIT, MONOLITHIC SILICON
DLA SMD-5962-92284-1993 MICROCIRCUIT, DIGITAL, CMOS, 32-BIT RISC MICROPROCESSOR, MONOLITHIC SILICON

British Standards Institution (BSI), Semiconductor Oxygen Content

BS EN 62416:2010 Semiconductor devices - Hot carrier test on MOS transistors
BS IEC 60747-8-4:2004 Discrete semiconductor devices - Metal-oxide semiconductor field-effect transistors (MOSFETs) for power switching applications
BS 3839:1978 Specification for oxygen-free high-conductivity copper for electronic tubes and semiconductor devices
13/30264596 DC BS EN 60747-14-7. Semiconductor devices. Part 14-7. Semiconductor sensor. Flow meter
BS EN 62830-3:2017 Semiconductor devices. Semiconductor devices for energy harvesting and generation - Vibration based electromagnetic energy harvesting
BS IEC 62830-1:2017 Semiconductor devices. Semiconductor devices for energy harvesting and generation - Vibration based piezoelectric energy harvesting
BS IEC 62830-7:2021 Semiconductor devices. Semiconductor devices for energy harvesting and generation. Linear sliding mode triboelectric energy harvesting
BS IEC 62373-1:2020 Semiconductor devices. Bias-temperature stability test for metal-oxide, semiconductor, field-effect transistors (MOSFET) - Fast BTI test for MOSFET
BS IEC 62830-3:2017 Semiconductor devices - Semiconductor devices for energy harvesting and generation. - Part 3: Vibration based electromagnetic energy harvesting
BS EN IEC 62969-3:2018 Semiconductor devices. Semiconductor interface for automotive vehicles - Shock driven piezoelectric energy harvesting for automotive vehicle sensors
BS EN 60749-7:2002 Semiconductor devices - Mechanical and climatic test methods - Internal moisture content measurement and the analysis of other residual gases
BS IEC 62830-2:2017 Semiconductor devices - Semiconductor devices for energy harvesting and generation. - Part 2: Thermo power based thermoelectric energy harvesting
BS EN 62373:2006 Bias-temperature stability test for metal-oxide, semiconductor, field-effect transistors (MOSFET)
BS EN 62417:2010 Semiconductor devices - Mobile ion tests for metal-oxide semiconductor field effect transistors (MOSFETs)
BS EN 62007-2:2000 Semiconductor optoelectronic devices for fibre optic system applications - Measuring methods
BS IEC 62830-5:2021 Semiconductor devices. Semiconductor devices for energy harvesting and generation. Test method for measuring generated power from flexible thermoelectric devices
BS IEC 63275-1:2022 Semiconductor devices. Reliability test method for silicon carbide discrete metal-oxide semiconductor field effect transistors - Test method for bias temperature instability
18/30381548 DC BS EN 62373-1. Semiconductor devices. Bias-temperature stability test for metal-oxide semiconductor field-effect transistors (MOSFET). Part 1. Fast BTI Test method
17/30366375 DC BS IEC 62373-1. Semiconductor devices. Bias-temperature stability test for metal-oxide semiconductor field-effect transistors (MOSFET). Part 1. Fast BTI Test method
BS IEC 62830-4:2019 Semiconductor devices. Semiconductor devices for energy harvesting and generation - Test and evaluation methods for flexible piezoelectric energy harvesting devices
BS QC 790101:1992 Harmonized system of quality assessment for electronic components. Semiconductor devices. Integrated circuits. Sectional specification for semiconductor integrated circuits excluding hybrid circuits. Internal visual examination for semiconductor integr...
BS EN 62007-2:2009 Semiconductor optoelectronic devices for fibre optic system applications - Measuring methods
14/30296894 DC BS EN 62830-1. Semiconductor devices. Semiconductor devices for energy harvesting and generation. Part 1. Vibration based piezoelectric energy harvesting
18/30380675 DC BS EN IEC 62830-7. Semiconductor devices. Semiconductor devices for energy harvesting and generation. Part 7. Linear sliding mode triboelectric energy harvesting
BS QC 790130:1992 Specification for harmonized system of quality assessment for electronic components - Semiconductor devices - Integrated circuits - Blank detail specification - HCMOS digital integrated circuits (series 54/74 HC, 54/74 HCT, 54/74 HCU)
BS EN 61788-9:2005 Superconductivity - Part 9: Measurements for bulk high temperature superconductors - Trapped flux density of large grain oxide superconductors
18/30355426 DC BS EN 62830-5. Semiconductor devices. Semiconductor devices for energy harvesting and generation. Part 5. Test method for measuring generated power from flexible thermoelectric devices
BS IEC 62830-6:2019 Semiconductor devices. Semiconductor devices for energy harvesting and generation - Test and evaluation methods for vertical contact mode triboelectric energy harvesting devices
BS EN 60749-39:2006 Semiconductor devices - Mechanical and climatic test methods - Measurement of moisture diffusivity and water solubility in organic materials used for semiconductor components
BS IEC 60747-14-11:2021 Semiconductor devices - Semiconductor sensors. Test method of surface acoustic wave-based integrated sensors for measuring ultraviolet, illumination and temperature
BS ISO 17299-5:2014 Textiles. Determination of deodorant property. Metal-oxide semiconductor sensor method
PD ES 59008-4-1:2001 Data requirements for semiconductor die. Specific requirements and recommendations. Test and quality
20/30406230 DC BS IEC 63275-1. Semiconductor devices. Reliability test method for silicon carbide discrete metal-oxide semiconductor field effect transistors. Part 1. Test method for bias temperature instability
BS EN 14756:2006 Determination of the limiting oxygen concentration (LOC) for flammable gases and vapours
BS EN 14756:2007 Determination of the limiting oxygen concentration (LOC) for flammable gases and vapours

Group Standards of the People's Republic of China, Semiconductor Oxygen Content

T/CECA 35-2019 Metal oxide semiconductor gas sensor
T/QGCML 743-2023 Specifications for anodizing process of semiconductor equipment parts
T/CASAS 006-2020 The general specification for silicon carbide metal-oxide-semiconductor field-effect-transistor
T/CASAS 015-2022 Power cycling test method for silicon carbide metal-oxide-semiconductor field-effect-transistor（SiC MOSFET）
T/CNIA 0143-2022 Ultrapure Resin Vessels for Trace Impurity Analysis of Semiconductor Materials

Association Francaise de Normalisation, Semiconductor Oxygen Content

NF C80-203*NF EN 62417:2010 Semiconductor devices - Mobile ion tests for metal-oxide semiconductor field effect transistors (MOSFETs).
NF EN 62417:2010 Dispositifs à semiconducteurs - Essais d'ions mobiles pour transistors à semiconducteur à oxyde métallique à effet de champ (MOSFET)
NF C86-010:1986 Semiconductor devices. Harmonized system of quality assessment for electronic components. Discrete semiconductor devices. Generic specification.
NF EN IEC 62969-3:2018 Dispositifs à semiconducteurs - Interface à semiconducteurs pour les véhicules automobiles - Partie 3 : récupération de l'énergie piézoélectrique produite par les chocs pour les capteurs de véhicules automobiles
NF C96-051*NF EN 62373:2006 Bias-temperature stability test for metal-oxide, semiconductor, field-effect transistors (MOSFET)
NF M03-051:2002 Combustibles minéraux solides - Calcul de la teneur en oxygène par différence
NF EN 62373:2006 Essai de stabilité de température en polarisation pour transistors à effet de champ métal-oxyde-semiconducteur (MOSFET)
NF C96-022-7*NF EN 60749-7:2012 Semiconductor devices - Mechanical and climatic test methods - Part 7 : internal moisture content measurement and the analysis of other residual gases.
NF EN 60749-7:2012 Dispositifs à semiconducteurs - Méthodes d'essais mécaniques et climatiques - Partie 7 : mesure de la teneur en humidité interne et analyse des autres gaz résiduels
NF C31-888-9*NF EN 61788-9:2005 Superconductivity - Part 9 : measurements for bulk high temperature superconductors - Trapped flux density of large grain oxide superconductors.
NF C96-069-3*NF EN IEC 62969-3:2018 Semiconductor devices - Semiconductor interface for automotive vehicles - Part 3 : shock driven piezoelectric energy harvesting for automotive vehicle sensors
NF EN 61788-9:2005 Supraconductivité - Partie 9 : mesures pour supraconducteurs haute température massifs - Densité de flux résiduel des oxydes supraconducteurs à gros grains
NF C86-503:1986 Semiconductor devices. Harmonized system of quality assessment for electronic components. Phototransistors, photodarlington transistors and phototrasistor-arrays. Blank detail specification CECC 20 003.

International Electrotechnical Commission (IEC), Semiconductor Oxygen Content

IEC 62417:2010 Semiconductor devices - Mobile ion tests for metal-oxide semiconductor field effect transistors (MOSFETs)
IEC 60747-8-4:2004 Discrete semiconductor devices - Part 8-4: Metal-oxide-semiconductor field-effect transistors (MOSFETs) for power switching applications
IEC 62830-2:2017 Semiconductor devices - Semiconductor devices for energy harvesting and generation - Part 2: Thermo power based thermoelectric energy harvesting
IEC 62830-3:2017 Semiconductor devices - Semiconductor devices for energy harvesting and generation - Part 3: Vibration based electromagnetic energy harvesting
IEC 62373-1:2020 Semiconductor devices - Bias-temperature stability test for metal-oxide, semiconductor, field-effect transistors (MOSFET) - Part 1: Fast BTI test for MOSFET
IEC 62830-1:2017 Semiconductor devices - Semiconductor devices for energy harvesting and generation - Part 1: Vibration based piezoelectric energy harvesting
IEC 62969-3:2018 Semiconductor devices - Semiconductor interface for automotive vehicles - Part 3: Shock driven piezoelectric energy harvesting for automotive vehicle sensors
IEC 60749-7/COR1:2003 Semiconductor devices - Mechanical and climatic test methods - Part 7: Internal moisture content measurement and the analysis of other residual gases
IEC 62830-7:2021 Semiconductor devices - Semiconductor devices for energy harvesting and generation - Part 7: Linear sliding mode triboelectric energy harvesting
IEC 62830-5:2021 Semiconductor devices - Semiconductor devices for energy harvesting and generation - Part 5: Test method for measuring generated power from flexible thermoelectric devices
IEC 60749-7:2002 Semiconductor devices - Mechanical and climatic test methods - Part 7: Internal moisture content measurement and the analysis of other residual gases
IEC 60749-7:2011 Semiconductor devices - Mechanical and climatic test methods - Part 7: Internal moisture content measurement and the analysis of other residual gases
IEC 63275-1:2022 Semiconductor devices - Reliability test method for silicon carbide discrete metal-oxide semiconductor field effect transistors - Part 1: Test method for bias temperature instability
IEC 61788-9:2005 Superconductivity - Part 9: Measurements for bulk high temperature superconductors - Trapped flux density of large grain oxide superconductors
IEC 62373:2006 Bias-temperature stability test for metal-oxide, semiconductor, field-effect transistors (MOSFET)
IEC 63275-2:2022 Semiconductor devices - Reliability test method for silicon carbide discrete metal-oxide semiconductor field effect transistors - Part 2: Test method for bipolar degradation due to body diode operatio
IEC 60749-39:2021 RLV Semiconductor devices - Mechanical and climatic test methods - Part 39: Measurement of moisture diffusivity and water solubility in organic materials used for semiconductor components
IEC 60749-39:2021 Semiconductor devices - Mechanical and climatic test methods - Part 39: Measurement of moisture diffusivity and water solubility in organic materials used for semiconductor components

Professional Standard - Electron, Semiconductor Oxygen Content

SJ 20744-1999 General rule of infrared absorption spectral analysis for the impurity concentration in semiconductor materials
SJ 20025-1992 Generic specification for gas sensors of metal-oxide semiconductor
SJ 20026-1992 Measuring methods for gas sensors of metal-oxide semiconductor
SJ 20079-1992 Test mehods for gas sensors of metal-oxide semiconductor
SJ/T 9533-1993 Grading standard of quality for semiconductor discrete devices
SJ/T 9534-1993 Grading standard of quality for semiconductor integrated circuits
SJ/T 11487-2015 Non-contact measurement method for the resistivity of semi-insulating semiconductor wafer
SJ/T 10705-1996 Standard practice for inspection of surface quality of semiconductor lead-bonding wire
SJ/T 11824-2022 Metal Oxide Semiconductor Field Effect Transistor (MOSFET) Equivalent Capacitance and Voltage Change Rate Test Method
SJ/T 2658.7-2015 Measuring method for semiconductor infrared-emitting diode.Part 7: Radiant flux
SJ 2355.6-1983 Method of measurement for luminous flux of light-emitting devices

Danish Standards Foundation, Semiconductor Oxygen Content

DS/EN 62417:2010 Semiconductor devices - Mobile ion tests for metal-oxide semiconductor field effect transistors (MOSFETs)
DS/EN 62373:2006 Bias-temperature stability test for metal-oxide, semiconductor, field-effect transistors (MOSFET)
DS/EN 60749-7:2011 Semiconductor devices - Mechanical and climatic test methods - Part 7: Internal moisture content measurement and the analysis of other residual gases

German Institute for Standardization, Semiconductor Oxygen Content

DIN EN 62417:2010-12 Semiconductor devices - Mobile ion tests for metal-oxide semiconductor field effect transistors (MOSFETs) (IEC 62417:2010); German version EN 62417:2010
DIN 50449-2:1998 Testing of materials for semiconductor technology - Determination of impurity content in semiconductors by infrared absorption - Part 2: Boron in gallium arsenide
DIN EN 62417:2010 Semiconductor devices - Mobile ion tests for metal-oxide semiconductor field effect transistors (MOSFETs) (IEC 62417:2010); German version EN 62417:2010
DIN 50447:1995 Testing of materials for semiconductor technology - Contactless determination of the electrical sheet resistance of semiconductor layers with the eddy-current method
DIN 50449-1:1997 Testing of materials for semiconductor technology - Determination of impurity content in semiconductors by infrared absorption - Part 1: Carbon in gallium arsenide
DIN 50441-1:1996 Testing of materials for semiconductor technology - Determination of the geometric dimensions of semiconductor wafers - Part 1: Thickness and thickness variation
DIN EN 62373:2007 Bias-temperature stability test for metal-oxide, semiconductor, field-effect transistors (MOSFET) (IEC 62373:2006); German version EN 62373:2006
DIN 50438-2:1982 Testing of materials for semiconductor technology; determination of impurty content in silicon by infrared absorption; carbon
DIN EN 60749-7:2012 Semiconductor devices - Mechanical and climatic test methods - Part 7: Internal moisture content measurement and the analysis of other residual gases (IEC 60749-7:2011); German version EN 60749-7:2011
DIN EN 62373:2007-01 Bias-temperature stability test for metal-oxide, semiconductor, field-effect transistors (MOSFET) (IEC 62373:2006); German version EN 62373:2006
DIN 50441-2:1998 Testing of materials for semiconductor technology - Determination of the geometric dimensions of semiconductor wafers - Part 2: Testing of edge profile
DIN EN 60749-7:2012-02 Semiconductor devices - Mechanical and climatic test methods - Part 7: Internal moisture content measurement and the analysis of other residual gases (IEC 60749-7:2011); German version EN 60749-7:2011 / Note: DIN EN 60749-7 (2003-04) remains valid alon...
DIN 50450-9:2003 Testing of materials for semiconductor technology - Determination of impurities in carrier gases and dopant gases - Part 9: Determination of oxygen, nitrogen, carbonmonoxide, carbondioxide, hydrogen and C<(Index)1>-C<(Index)3>-hydrocarbons in gaseous hydr
DIN 43653:1976 High rupturing-capacity fuses for semi-conductor converters
DIN 51722-1:1990-07 Testing of solid fuels; determination of nitrogen content; semi-micro Kjeldahl method
DIN EN 14756:2007 Determination of the limiting oxygen concentration (LOC) for flammable gases and vapours; English version of DIN EN 14756:2007-02
DIN 50443-1:1988 Testing of materials for use in semiconductor technology; detection of crystal defects and inhomogeneities in silicon single crystals by X-ray topography
DIN 51726:2004 Testing of solid fuels - Determination of the carbonate carbon dioxide content

ES-UNE, Semiconductor Oxygen Content

UNE-EN 62417:2010 Semiconductor devices - Mobile ion tests for metal-oxide semiconductor field effect transistors (MOSFETs) (Endorsed by AENOR in September of 2010.)
UNE-EN IEC 62969-3:2018 Semiconductor devices - Semiconductor interface for automotive vehicles - Part 3: Shock driven piezoelectric energy harvesting for automotive vehicle sensors (Endorsed by Asociación Española de Normalización in August of 2018.)
UNE-EN 62373:2006 Bias-temperature stability test for metal-oxide, semiconductor, field-effect transistors (MOSFET) (IEC 62373:2006). (Endorsed by AENOR in November of 2006.)
UNE-EN 60749-7:2011 Semiconductor devices - Mechanical and climatic test methods - Part 7: Internal moisture content measurement and the analysis of other residual gases (Endorsed by AENOR in December of 2011.)
UNE-EN 61788-9:2005 Superconductivity -- Part 9: Measurements for bulk high temperature superconductors - Trapped flux density of large grain oxide superconductors (Endorsed by AENOR in November of 2005.)

Lithuanian Standards Office , Semiconductor Oxygen Content

LST EN 62417-2010 Semiconductor devices - Mobile ion tests for metal-oxide semiconductor field effect transistors (MOSFETs) (IEC 62417:2010)
LST EN 62373-2006 Bias-temperature stability test for metal-oxide, semiconductor, field-effect transistors (MOSFET) (IEC 62373:2006)
LST EN 60749-7-2011 Semiconductor devices - Mechanical and climatic test methods -- Part 7: Internal moisture content measurement and the analysis of other residual gases (IEC 60749-7:2011)

American Society for Testing and Materials (ASTM), Semiconductor Oxygen Content

ASTM UOP649-10 Total Oxygen in Solid, Semi-solid, and High Boiling Point Liquid Hydrocarbons by Pyrolysis
ASTM F1893-98(2003) Guide for Measurement of Ionizing Dose-Rate Burnout of Semiconductor Devices
ASTM F1893-98 Guide for Measurement of Ionizing Dose-Rate Burnout of Semiconductor Devices
ASTM F616M-96 Standard Test Method for Measuring MOSFET Drain Leakage Current (Metric)
ASTM F616M-96(2003) Standard Test Method for Measuring MOSFET Drain Leakage Current (Metric)
ASTM F1893-18 Guide for Measurement of Ionizing Dose-Rate Survivability and Burnout of Semiconductor Devices
ASTM F1893-11 Guide for Measurement of Ionizing Dose-Rate Survivability and Burnout of Semiconductor Devices

CZ-CSN, Semiconductor Oxygen Content

CSN 35 8754-1973 Semiconductor devices. Transistors. Measurement of short-circuit output admittance
CSN 35 8773-1977 Meaaurement of semiconductor devices. Thyristors. Meaaurement of blocking current and reverse blocking current.
CSN 35 8756-1973 Semiconductor devices. Transistors Measurement of y-parameters
CSN 35 8740-1973 Semiconduotor deviees. Transistore. Measurement of saturation voltage
CSN 35 8732-1964 Semiconductor diodes. Measurement of forward current
CSN 44 1350-1974 Determination of oxygen in solid fuels
CSN 35 8742-1973 Semiconductor devices. Transistors. Measurement of cut-oíf currents
CSN 35 8736-1964 Semiconductor diodes. Measurement of interelectrode capacitanoe
CSN 35 1603-1983 Power semiconductor devices. General methodes of measurements
CSN 35 8759-1977 Semiconductor devices. Transistors. Methods of measurement of switching times
CSN 35 8770-1970 Thyristors. Method of measurement on-state voltage
CSN 35 8734-1975 Semieonductor devices. Diodcs. Measurement of reverse current.
CSN 35 8749-1973 Semiconductor devices. Transistors. Measurement of absolute value of short-circuit forward transfer admittance
CSN 35 8767-1982 Semiconductor diodes Methods of electrical parameters measurement
CSN 35 8850 Cast.1-1984 Semiconductor radiators. Main parameters of measuring methods
CSN 35 8737-1975 Semiconductor devices. Diodes. Measurement of differential rosistanoe
CSN 35 8772-1970 Thyristors. Method of measuring holding current
CSN 35 8760-1973 Seraiconductors. Stabilizing diodes. Measurement of voltage temperature coefficient
CSN 35 8735-1964 Semiconductor diodes. Measurement of d. c. currents and voltages
CSN 35 8769-1983 Semiconductor Zener diodes. Electric parameters measurement methods
CSN 35 8768-1983 Semiconductor switching diodes. Electric parameters measurement methods
CSN 35 8761-1973 Semiconductor devices. Phototransistors photodíodes. Measurement of photoelectric current
CSN 35 8762-1973 Semiconductor devices. Phototransistors photodiodes. Measurement of dark current
CSN 35 8752-1976 Semiconductor devices. Transistors. Measuring methods for common base output capacitance.
CSN 35 8766-1976 Semieonductor devices. Switching diodes. Measurement cf forward volíage.
CSN 35 8731-1975 Semiconductor devices. Diodes Measurement of d. c. forward voltage
CSN 35 8850 Cast.2-1984 Semiconductor radiation detectors. Main parameters of measuring methods
CSN 35 8763-1973 Semiconductor devices. Diodes. Measurement o? reverse breakdown voltage
CSN 35 8785-1975 Semiconductor devices. Varicaps. Measurement of thermal capacitance coefflcient.
CSN 35 8733-1975 Semiconductor devices. Diodes. Measurement of reverse voltago (working voltago)
CSN 35 8764-1976 Semicoaductor devices. Switching diodes. Measurement o? reverse recovery time.
CSN 35 8765-1976 Semiconductor devices. Switching diodes. Measurement of reverse recovery charge.

General Administration of Quality Supervision, Inspection and Quarantine of the People‘s Republic of China, Semiconductor Oxygen Content

GB/T 15652-1995 Generic specification for gas sensors of metal-oxide semiconductor
GB/T 15653-1995 Measuring methods for gas sensors of metal-oxide semiconductor
GB/T 11685-2003 Measurement procedures for semiconductor X-ray detector system and semiconductor X-ray energy spectrometers
GB/T 21115-2007(英文版) Measurement for levitation force of bulk oxide superconductor
GB/T 5201-2012 Test procedures for semiconductor charged particle detectors
GB/T 42676-2023 X-ray Diffraction Method for Testing the Quality of Semiconductor Single Crystal
GB/T 21115-2007 Measurement for levitation force of bulk oxide superconductor
GB/T 14144-1993 Test method for determination of radial interstitial oxygen variation in silicon
GB/T 14144-2009 Testing method for determination of radial interstitial oxygen variation in silicon
GB/T 1557-1989 The method of determining interstitial oxygen content in silicon by infrared absorption
GB/T 1557-2006 The method of determining interstitial oxygen content in silicon by infrared absorption
GB/T 41853-2022 Semiconductor devices—Micro-electromechanical devices—Wafer to wafer bonding strength measurement

YU-JUS, Semiconductor Oxygen Content

JUS H.F8.121-1986 Gases. Oxygen. Determination of oxygen content. Absorption method
JUS N.R1.470-1985 Semiconductor devices. Reference methods of measurement
JUS H.F8.125-1986 Gases. Determination of oxygen content Colorimetric method
JUS H.G8.050-1983 Reagents, Hydrogen peroxide. Determination of hydrogen peroxide content. Volumetric method
JUS H.G8.284-1987 Reagents. Copper(ll) oxide. Determination ofcopper(ll) oxide content. Volumetric method
JUS H.F8.122-1986 Gases. Determination of oxygen content. Gas chromatographic method
JUS H.F8.191-1986 Gases. Determination of carbon monoxide. Absorption method
JUS H.B8.654-1983 Hydrogen peroxide for industrial use. Determination of hydrogen peroxide content. Volumetric method
JUS H.F8.190-1989 Gases. Determination of carbon monoxide. Choice ofmetfiods
JUS H.F8.151-1986 Gases. Determination of carbon dioxid content. Absorption method
JUS H.F8.150-1989 Gases. Determination ofcarbon dioxide. Choice of methods
JUS H.F8.180-1989 Gases. Determination of sulphur dioxide. Choice of methods
JUS H.G8.410-1991 Reagents. Sodium hvdroxide. Determination of sodium hvdroxide and carbonate contents. Volumetric method
JUS H.F8.152-1986 Gases. Determination ofcarbon dioxid content. Gas chromatographic methctC/
JUS H.G8.509-1991 Reagents. Potassium hydroxide. Determination of potassium hydroxide and carbonate contents. Volumetric method

PH-BPS, Semiconductor Oxygen Content

PNS IEC 62830-2:2021 Semiconductor devices - Semiconductor devices for energy harvesting and generation - Part 2: Thermo power based thermoelectric energy harvesting
PNS IEC 62373-1:2021 Semiconductor devices - Bias-temperature stability test for metal-ox ide, semiconductor, field-effect transistors (MOSFET) - Part 1: Fast BTI test for MOSFET
PNS IEC 62830-4:2021 Semiconductor devices - Semiconductor devices for energy harvesting and generation - Part 4: Test and evaluation methods for flexible piezoelectric energy harvesting devices

Korean Agency for Technology and Standards (KATS), Semiconductor Oxygen Content

KS C 2607-1974(2000) TESTING METHODS OF SEMICONDUCTOR
KS C 2607-1980 TESTING METHODS OF SEMICONDUCTOR
KS C IEC 60749-7:2004 Semiconductor devices－Mechanical and climatic test methods－Part 7：Internal moisture content measurement and the analysis of other residual gases
KS C IEC 60749-7:2020 Semiconductor devices — Mechanical and climatic test methods —Part 7: Internal moisture content measurement and the analysis of other residual gases
KS C 6563-1996(2016) Principal measuring methods for semiconductor pressure sensor elements
KS C 6563-1996(2021) Principal measuring methods for semiconductor pressure sensor elements
KS C 6520-2021 Components and materials of semiconductor process —Measurement of wear characteristics by plasma
KS C IEC 60748-2-5:2002 Semiconductor devices－Integrated circuits Part 2：Digital integrated circuits Section 5－Blank detail specification for complementary MOS digital integrated circuits(series 4 000B and 4 000UB)
KS C IEC 60748-2-4:2002 Semiconductor devices－Integrated circuits－Part 2：Digital integrated circuits－Section 4：Family specification for complementary MOS digital integrated circuits, series 4 000 B and 4 000 UB
KS C IEC 60749-39-2006(2021) Semiconductor devices－Mechanical and climatic test methods－Part 39：Measurement of moisture diffusivity and water solubility in organic materials used for semiconductor components

PL-PKN, Semiconductor Oxygen Content

PN T01208-03-1992 Semiconductor devices Bipolar transistors Measuring methods
PN T01303-03-1991 Semicondutor devices. Integrated circuits. Analogue integrated circuits. Measuring methods

U.S. Military Regulations and Norms, Semiconductor Oxygen Content

ARMY MIL-M-63530 NOTICE 1-1997 MICROCIRCUIT, DIGITAL, CMOS (LOGIC)
ARMY MIL-M-63530 (1)-1987 MICROCIRCUIT, DIGITAL, CMOS (LOGIC)
ARMY MIL-M-63530-1981 MICROCIRCUIT, DIGITAL, CMOS (LOGIC)
ARMY MIL-M-63320 A NOTICE 1-1997 MILITARY SPECIFICATION MICROCIRCUIT, DIGITAL, CMOS (INITIAL LOGIC)
ARMY MIL-M-63320 A (4)-1990 MICROCIRCUIT, DIGITAL, CMOS (INITIAL LOGIC)
ARMY MIL-M-63320 A-1981 MICROCIRCUIT, DIGITAL, CMOS (INITIAL LOGIC)
ARMY MIL-M-63321 A NOTICE 1-1997 MICROCIRCUIT, DIGITAL, CMOS (FINAL LOGIC)
ARMY MIL-I-48632 NOTICE 1-1996 INTEGRATED CIRCUIT, DIGITAL, CMOS CONTROL AND TIMING BASE, MONOLITHIC, SILICON
ARMY MIL-I-48632 (2)-1993 INTEGRATED CIRCUIT, DIGITAL, CMOS CONTROL AND TIMING BASE, MONOLITHIC, SILICON
ARMY MIL-I-48632-1986 INTEGRATED CIRCUIT, DIGITAL, CMOS CONTROL AND TIMING BASE, MONOLITHIC, SILICON
ARMY MIL-I-48634 NOTICE 1-1996 INTEGRATED CIRCUIT, DIGITAL, CMOS LOGIC ARRAY MONOLITHIC SILICON
ARMY MIL-I-48634 (3)-1993 INTEGRATED CIRCUIT, DIGITAL, CMOS LOGIC ARRAY MONOLITHIC SILICON
ARMY MIL-I-48634-1986 INTEGRATED CIRCUIT, DIGITAL, CMOS LOGIC ARRAY MONOLITHIC SILICON
ARMY MIL-M-48646 NOTICE 1-1997 MICROCIRCUIT, DIGITAL, SCO/DLA MULTICHIP CMOS
ARMY MIL-M-48646-1986 MICROCIRCUIT, DIGITAL, SCO/DLA MULTICHIP CMOS
ARMY MIL-M-63321 A (4)-1990 MICROCIRCUIT, DIGITAL, CMOS (FINAL LOGIC)
ARMY MIL-M-63321 A-1981 MICROCIRCUIT, DIGITAL, CMOS (FINAL LOGIC)
ARMY MIL-M-63324 A VALID NOTICE 1-1988 MICROCIRCUIT, DIGITAL, CMOS, SPECIAL PURPOSE NOR GATE
ARMY MIL-M-63324 A (1)-1982 MICROCIRCUIT, DIGITAL, CMOS, SPECIAL PURPOSE NOR GATE
ARMY MIL-M-63324 A-1981 MICROCIRCUIT, DIGITAL, CMOS, SPECIAL PURPOSE NOR GATE
ARMY MIL-M-63324 A NOTICE 2-1997 MICROCIRCUIT, DIGITAL, CMOS, SPECIAL PURPOSE NOR GATE

工业和信息化部, Semiconductor Oxygen Content

SJ/T 9014.8.2-2018 Semiconductor Devices Discrete Devices Part 8-2: Blank Detailed Specification for Superjunction Metal Oxide Semiconductor Field Effect Transistors
YB/T 4908.6-2021 Determination of oxygen and nitrogen content in vanadium-aluminum alloys by inert gas fusion infrared absorption method and thermal conductivity method

Society of Automotive Engineers (SAE), Semiconductor Oxygen Content

SAE AMS2315A-1980 DETERMINATION OF FREE FERRITE CONTENT
SAE AMS2315-1963 FREE FERRITE CONTENT Method For Determining Percent
SAE AIR1921-1994 SPARK IGNITER SEMICONDUCTOR RESISTANCE MEASUREMENT USING CONTROLLED ENERGY LEVELS

国家市场监督管理总局、中国国家标准化管理委员会, Semiconductor Oxygen Content

GB/T 40789-2021 Gas analysis—Online automated measuring systems for content of carbon monoxide , carbon dioxide and oxygen—Determination of performance characteristics
GB/T 1557-2018 Test method for determining interstitial oxygen content in silicon by infrared absorption
GB/T 41040-2021 COTS semiconductor parts for space application—Quality assurance requirements

ESDU - Engineering Sciences Data Unit, Semiconductor Oxygen Content

ESDU 02002 A-2005 Thermal conductivity of liquids: Aromatic compounds containing oxygen.

(U.S.) Joint Electron Device Engineering Council Soild State Technology Association, Semiconductor Oxygen Content

JEDEC JEB5-A-1970 Methods of Measurement for Semiconductor Logic Gating Microcircuits
JEDEC JEB15-1969 Terminology and Methods of Measurement for Bistable Semiconductor Microcircuits
JEDEC EIA-318-B-1996 Measurement of Reverse Recovery Time for Semiconductor Signal Diodes [Replaced: JEDEC 318-1]
JEDEC JESD286-B-2000 Standard for Measuring Forward Switching Characteristics of Semiconductor Diodes

IN-BIS, Semiconductor Oxygen Content

Japanese Industrial Standards Committee (JISC), Semiconductor Oxygen Content

JIS K 0315:2022 Method for measuring reducing trace gases by semiconductor-type trace gas measuring equipment
JIS H 7313:2007 Superconductivity -- Measurements for bulk high temperature superconductors -- Trapped flux density of large grain oxide superconductors
JIS K 0301:1998 Methods for determination of oxygen in flue gas
JIS K 0301:2016 Methods for determination of oxygen in flue gas
JIS B 7983:1994 Continuous analyzers for oxygen in flue gas
JIS K 0098:1998 Methods for determination of carbon monoxide in flue gas
JIS K 0098:2016 Methods for determination of carbon monoxide in flue gas

IPC - Association Connecting Electronics Industries, Semiconductor Oxygen Content

IPC TM-650 5.1.412-1975 Analysis of Epoxy Resin for Solids Content

Taiwan Provincial Standard of the People's Republic of China, Semiconductor Oxygen Content

CNS 8104-1981 Method for Measuring MOSFET Linear Threshold Voltage
CNS 8106-1981 Method for Measuring MOSFET Saturated Threshold Voltage
CNS 13805-1997 Method of Measurement for Photoluminescence of Optoelectronic Semiconductor Wafers

Association of German Mechanical Engineers, Semiconductor Oxygen Content

VDI/VDE 3713 Blatt 8-1995 Technical procurement specification - Epoxy encapsulants for semiconductor chips

CU-NC, Semiconductor Oxygen Content

NC 66-13-1984 Electronics. Thermal Dissipators for Semiconductors Quality Specifications
NC 24-22-1984 Inorganlc Chem?cal Products. L?quid Sodlum Hydroxide. Datermlnation of the Content oí Sodlum Hydrox?de

RO-ASRO, Semiconductor Oxygen Content

STAS 10954-1977 SEMICONDUCTOR RECTIFIERS General technical requirements for quality
STAS 12124/1-1982 Semiconductor devices BIPOLAR TRANZISTORS Methods for measuring electrical static parameters
STAS 12124/3-1983 Semiconductor devices FIFL D-EFFECT TRANZISTORS Methods for measuring electrical static parameters
STAS 12124/4-1983 Semiconductor devices FIELD-EFECT TRANZISTORS Methods for measuring electrical static parameters

CENELEC - European Committee for Electrotechnical Standardization, Semiconductor Oxygen Content

EN 60749-7:2002 Semiconductor Devices - Mechanical and Climatic Test Methods Part 7: Internal Moisture Content Measurement and the Analysis of Other Residual Gases
EN 60749:1999 Semiconductor Devices - Mechanical and Climatic Test Methods (Incorporates Amendments A1: 2000 and A2: 2001)

IEEE - The Institute of Electrical and Electronics Engineers@ Inc., Semiconductor Oxygen Content

IEEE 641-1987 STANDARD DEFINITIONS AND CHARACTERIZATION OF METAL NITRIDE OXIDE SEMICONDUCTOR ARRAYS

Indonesia Standards, Semiconductor Oxygen Content

SNI 13-4125-1996 Code for measurement of carbon dioxide gas on underground mining
SNI 19-1432-1989 Exhaust-gases, Test methods for nitrogen dioxide content
SNI 19-2877-1992 Exhaust - gases, Test method for cyanide hydrogen content

KR-KS, Semiconductor Oxygen Content

KS C IEC 60749-7-2020 Semiconductor devices — Mechanical and climatic test methods —Part 7: Internal moisture content measurement and the analysis of other residual gases

Professional Standard - Post and Telecommunication, Semiconductor Oxygen Content

YD/T 682-1994 Quality grading criteria of semiconductor rectifier installations for communication

中华人民共和国国家质量监督检验检疫总局、中国国家标准化管理委员会, Semiconductor Oxygen Content

GB/T 4702.17-2016 Chromium metal─Determination of oxygen, nitrogen and hydrogen content─Inert gas fusion thermal infrared detection method and conductivity method
GB/T 30537-2014 Superconductivity―Measurements for bulk high temperature superconductors―Trapped flux density of large grain oxide superconductors

Sichuan Provincial Standard of the People's Republic of China, Semiconductor Oxygen Content

DB51/T 2043-2015 Determination of Oxygen and Nitrogen Content in Vanadium Aluminum Alloy Inert Gas Fusion-Infrared Absorption Method and Thermal Conductivity Method

Institute of Electrical and Electronics Engineers (IEEE), Semiconductor Oxygen Content

ANSI/IEEE Std 641-1987 IEEE Standard Definitions and Characterization of Metal Nitride Oxide Semiconductor Arrays

Professional Standard - Petrochemical Industry, Semiconductor Oxygen Content

SH/T 0341-1992 Method for Determination of Alumina Content in Catalyst Carrier

SE-SIS, Semiconductor Oxygen Content

SIS SS 18 71 67-1984 Solid mineral fuels - Determination of carbon dioxide content - Gravimetric method

Professional Standard - Aerospace, Semiconductor Oxygen Content

QJ 10004-2008 Total dose radiation testing method of semiconductor devices for space applications

GM North America, Semiconductor Oxygen Content

GM GM6078M-1989 Solid Film Lubricant Coatings Resin Bonded MOS2 and PTFE

VN-TCVN, Semiconductor Oxygen Content

TCVN 4920-2007 Solid mineral fuels.Determination of carbonate carbon content.Gravimetric method

Professional Standard - Building Materials, Semiconductor Oxygen Content

JC/T 2133-2012 Determination of impurities in silica sol for polishing solution in semiconductor industry.Inductively coupled plasma atomic emission spectrometric method

SAE - SAE International, Semiconductor Oxygen Content

SAE AIR1921-1985 Spark Igniter Semiconductor Resistance Measurement Using Controlled Energy Levels

International Organization for Standardization (ISO), Semiconductor Oxygen Content

ISO/TS 17915:2013 Optics and photonics.Measurement method of semiconductor lasers for sensing
ISO 991:1976 Potassium hydroxide for industrial use — Determination of carbonates content — Gas-volumetric method
ISO 980:1976 Sodium hydroxide for industrial use — Determination of carbonates content — Gas-volumetric method
ISO 17915:2018 Optics and photonics - Measurement method of semiconductor lasers for sensing
ISO 925:1980 Solid mineral fuels; Determination of carbon dioxide content; Gravimetric method

European Committee for Standardization (CEN), Semiconductor Oxygen Content

EN 14756:2006 Determination of the limiting oxygen concentration (LOC) for gases and vapours