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Oxygen semiconductor

Oxygen semiconductor, Total:357 items.

In the international standard classification, Oxygen semiconductor involves: Semiconductor devices, Integrated circuits. Microelectronics, Electronic components in general, Valves, Semiconducting materials, Electrical and electronic testing, Fibre optic communications, Electricity. Magnetism. Electrical and magnetic measurements, Materials for aerospace construction, Products of the textile industry, Electric filters.


European Committee for Electrotechnical Standardization(CENELEC), Oxygen semiconductor

  • EN 62417:2010 Semiconductor devices - Mobile ion tests for metal-oxide semiconductor field effect transistors (MOSFETs)
  • EN 62373:2006 Bias-temperature stability test for metal-oxide, semiconductor, field-effect transistors (MOSFET)

Defense Logistics Agency, Oxygen semiconductor

British Standards Institution (BSI), Oxygen semiconductor

  • BS EN 62416:2010 Semiconductor devices - Hot carrier test on MOS transistors
  • BS EN 62373:2006 Bias-temperature stability test for metal-oxide, semiconductor, field-effect transistors (MOSFET)
  • BS IEC 62373-1:2020 Semiconductor devices. Bias-temperature stability test for metal-oxide, semiconductor, field-effect transistors (MOSFET) - Fast BTI test for MOSFET
  • 18/30381548 DC BS EN 62373-1. Semiconductor devices. Bias-temperature stability test for metal-oxide semiconductor field-effect transistors (MOSFET). Part 1. Fast BTI Test method
  • 17/30366375 DC BS IEC 62373-1. Semiconductor devices. Bias-temperature stability test for metal-oxide semiconductor field-effect transistors (MOSFET). Part 1. Fast BTI Test method
  • BS IEC 60747-8-4:2004 Discrete semiconductor devices - Metal-oxide semiconductor field-effect transistors (MOSFETs) for power switching applications
  • BS ISO 17299-5:2014 Textiles. Determination of deodorant property. Metal-oxide semiconductor sensor method

Association Francaise de Normalisation, Oxygen semiconductor

  • NF C80-203*NF EN 62417:2010 Semiconductor devices - Mobile ion tests for metal-oxide semiconductor field effect transistors (MOSFETs).
  • NF EN 62417:2010 Dispositifs à semiconducteurs - Essais d'ions mobiles pour transistors à semiconducteur à oxyde métallique à effet de champ (MOSFET)
  • NF C96-051*NF EN 62373:2006 Bias-temperature stability test for metal-oxide, semiconductor, field-effect transistors (MOSFET)
  • NF EN 62373:2006 Essai de stabilité de température en polarisation pour transistors à effet de champ métal-oxyde-semiconducteur (MOSFET)

International Electrotechnical Commission (IEC), Oxygen semiconductor

  • IEC 62417:2010 Semiconductor devices - Mobile ion tests for metal-oxide semiconductor field effect transistors (MOSFETs)
  • IEC 62373-1:2020 Semiconductor devices - Bias-temperature stability test for metal-oxide, semiconductor, field-effect transistors (MOSFET) - Part 1: Fast BTI test for MOSFET
  • IEC 62373:2006 Bias-temperature stability test for metal-oxide, semiconductor, field-effect transistors (MOSFET)
  • IEC 60747-8-4:2004 Discrete semiconductor devices - Part 8-4: Metal-oxide-semiconductor field-effect transistors (MOSFETs) for power switching applications

Danish Standards Foundation, Oxygen semiconductor

  • DS/EN 62417:2010 Semiconductor devices - Mobile ion tests for metal-oxide semiconductor field effect transistors (MOSFETs)
  • DS/EN 62373:2006 Bias-temperature stability test for metal-oxide, semiconductor, field-effect transistors (MOSFET)

German Institute for Standardization, Oxygen semiconductor

  • DIN EN 62417:2010-12 Semiconductor devices - Mobile ion tests for metal-oxide semiconductor field effect transistors (MOSFETs) (IEC 62417:2010); German version EN 62417:2010
  • DIN EN 62373:2007 Bias-temperature stability test for metal-oxide, semiconductor, field-effect transistors (MOSFET) (IEC 62373:2006); German version EN 62373:2006
  • DIN EN 62417:2010 Semiconductor devices - Mobile ion tests for metal-oxide semiconductor field effect transistors (MOSFETs) (IEC 62417:2010); German version EN 62417:2010
  • DIN EN 62373:2007-01 Bias-temperature stability test for metal-oxide, semiconductor, field-effect transistors (MOSFET) (IEC 62373:2006); German version EN 62373:2006

ES-UNE, Oxygen semiconductor

  • UNE-EN 62417:2010 Semiconductor devices - Mobile ion tests for metal-oxide semiconductor field effect transistors (MOSFETs) (Endorsed by AENOR in September of 2010.)
  • UNE-EN 62373:2006 Bias-temperature stability test for metal-oxide, semiconductor, field-effect transistors (MOSFET) (IEC 62373:2006). (Endorsed by AENOR in November of 2006.)

Group Standards of the People's Republic of China, Oxygen semiconductor

  • T/CECA 35-2019 Metal oxide semiconductor gas sensor
  • T/CASAS 006-2020 The general specification for silicon carbide metal-oxide-semiconductor field-effect-transistor
  • T/CASAS 015-2022 Power cycling test method for silicon carbide metal-oxide-semiconductor field-effect-transistor(SiC MOSFET)

Lithuanian Standards Office , Oxygen semiconductor

  • LST EN 62417-2010 Semiconductor devices - Mobile ion tests for metal-oxide semiconductor field effect transistors (MOSFETs) (IEC 62417:2010)
  • LST EN 62373-2006 Bias-temperature stability test for metal-oxide, semiconductor, field-effect transistors (MOSFET) (IEC 62373:2006)

Professional Standard - Electron, Oxygen semiconductor

  • SJ 20025-1992 Generic specification for gas sensors of metal-oxide semiconductor
  • SJ 20026-1992 Measuring methods for gas sensors of metal-oxide semiconductor
  • SJ 20079-1992 Test mehods for gas sensors of metal-oxide semiconductor
  • SJ/T 11824-2022 Metal Oxide Semiconductor Field Effect Transistor (MOSFET) Equivalent Capacitance and Voltage Change Rate Test Method

General Administration of Quality Supervision, Inspection and Quarantine of the People‘s Republic of China, Oxygen semiconductor

  • GB/T 15652-1995 Generic specification for gas sensors of metal-oxide semiconductor
  • GB/T 15653-1995 Measuring methods for gas sensors of metal-oxide semiconductor

U.S. Military Regulations and Norms, Oxygen semiconductor

PH-BPS, Oxygen semiconductor

  • PNS IEC 62373-1:2021 Semiconductor devices - Bias-temperature stability test for metal-ox ide, semiconductor, field-effect transistors (MOSFET) - Part 1: Fast BTI test for MOSFET

RU-GOST R, Oxygen semiconductor

  • GOST 26239.7-1984 Semiconductor silicon. Method of oxygen, carbon and nitrogen determination

Taiwan Provincial Standard of the People's Republic of China, Oxygen semiconductor

  • CNS 8104-1981 Method for Measuring MOSFET Linear Threshold Voltage
  • CNS 8106-1981 Method for Measuring MOSFET Saturated Threshold Voltage

IEEE - The Institute of Electrical and Electronics Engineers@ Inc., Oxygen semiconductor

  • IEEE 641-1987 STANDARD DEFINITIONS AND CHARACTERIZATION OF METAL NITRIDE OXIDE SEMICONDUCTOR ARRAYS

Institute of Electrical and Electronics Engineers (IEEE), Oxygen semiconductor

  • ANSI/IEEE Std 641-1987 IEEE Standard Definitions and Characterization of Metal Nitride Oxide Semiconductor Arrays

GM North America, Oxygen semiconductor

International Organization for Standardization (ISO), Oxygen semiconductor

  • ISO 17299-5:2014 Textiles - Determination of deodorant property - Part 5: Metal-oxide semiconductor sensor method

工业和信息化部, Oxygen semiconductor

  • SJ/T 9014.8.2-2018 Semiconductor Devices Discrete Devices Part 8-2: Blank Detailed Specification for Superjunction Metal Oxide Semiconductor Field Effect Transistors




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