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semiconductor oxygen
semiconductor oxygen, Total:17 items.
In the international standard classification, semiconductor oxygen involves: Semiconducting materials, Semiconductor devices, Integrated circuits. Microelectronics.
RU-GOST R, semiconductor oxygen
- GOST 26239.7-1984 Semiconductor silicon. Method of oxygen, carbon and nitrogen determination
European Committee for Electrotechnical Standardization（CENELEC）, semiconductor oxygen
- EN 62417:2010 Semiconductor devices - Mobile ion tests for metal-oxide semiconductor field effect transistors (MOSFETs)
British Standards Institution (BSI), semiconductor oxygen
- BS EN 62416:2010 Semiconductor devices - Hot carrier test on MOS transistors
- BS IEC 62373-1:2020 Semiconductor devices. Bias-temperature stability test for metal-oxide, semiconductor, field-effect transistors (MOSFET) - Fast BTI test for MOSFET
- 17/30366375 DC BS IEC 62373-1. Semiconductor devices. Bias-temperature stability test for metal-oxide semiconductor field-effect transistors (MOSFET). Part 1. Fast BTI Test method
- 18/30381548 DC BS EN 62373-1. Semiconductor devices. Bias-temperature stability test for metal-oxide semiconductor field-effect transistors (MOSFET). Part 1. Fast BTI Test method
Association Francaise de Normalisation, semiconductor oxygen
- NF C80-203*NF EN 62417:2010 Semiconductor devices - Mobile ion tests for metal-oxide semiconductor field effect transistors (MOSFETs).
- NF EN 62417:2010 Dispositifs à semiconducteurs - Essais d'ions mobiles pour transistors à semiconducteur à oxyde métallique à effet de champ (MOSFET)
International Electrotechnical Commission (IEC), semiconductor oxygen
- IEC 62417:2010 Semiconductor devices - Mobile ion tests for metal-oxide semiconductor field effect transistors (MOSFETs)
- IEC 62373-1:2020 Semiconductor devices - Bias-temperature stability test for metal-oxide, semiconductor, field-effect transistors (MOSFET) - Part 1: Fast BTI test for MOSFET
Danish Standards Foundation, semiconductor oxygen
- DS/EN 62417:2010 Semiconductor devices - Mobile ion tests for metal-oxide semiconductor field effect transistors (MOSFETs)
German Institute for Standardization, semiconductor oxygen
- DIN EN 62417:2010-12 Semiconductor devices - Mobile ion tests for metal-oxide semiconductor field effect transistors (MOSFETs) (IEC 62417:2010); German version EN 62417:2010
- DIN EN 62417:2010 Semiconductor devices - Mobile ion tests for metal-oxide semiconductor field effect transistors (MOSFETs) (IEC 62417:2010); German version EN 62417:2010
ES-UNE, semiconductor oxygen
- UNE-EN 62417:2010 Semiconductor devices - Mobile ion tests for metal-oxide semiconductor field effect transistors (MOSFETs) (Endorsed by AENOR in September of 2010.)
Defense Logistics Agency, semiconductor oxygen
- DLA SMD-5962-96665 REV D-2005 MICROCIRCUIT, DIGITAL, RADIATION HARDENED, CMOS, HEX VOLTAGE LEVEL SHIFTER FOR TTL-TO-CMOS OR CMOS-TO- CMOS OPERATION, MONOLITHIC SILICON
Lithuanian Standards Office , semiconductor oxygen
- LST EN 62417-2010 Semiconductor devices - Mobile ion tests for metal-oxide semiconductor field effect transistors (MOSFETs) (IEC 62417:2010)
PH-BPS, semiconductor oxygen
- PNS IEC 62373-1:2021 Semiconductor devices - Bias-temperature stability test for metal-ox ide, semiconductor, field-effect transistors (MOSFET) - Part 1: Fast BTI test for MOSFET