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UV semiconductor

UV semiconductor, Total:500 items.

In the international standard classification, UV semiconductor involves: Optics and optical measurements, Optoelectronics. Laser equipment, Analytical chemistry, Integrated circuits. Microelectronics, Ceramics, Semiconductor devices, Aerospace electric equipment and systems, Semiconducting materials, Medical equipment, Inorganic chemicals, Radiation protection, Fibre optic communications, Mechanical structures for electronic equipment, Rectifiers. Convertors. Stabilized power supply, Products of the chemical industry, Applications of information technology, Technical drawings, Electronic components in general, Seals, glands, Farming and forestry, Graphical symbols, Printed circuits and boards, Vocabularies, Environmental testing, Veterinary medicine, Electrical wires and cables, Industrial automation systems, Physics. Chemistry, Radiation measurements, Electromechanical components for electronic and telecommunications equipment, Fuels.


Association Francaise de Normalisation, UV semiconductor

  • NF ISO 10677:2011 Céramiques techniques - Sources lumineuses UV destinée aux essais des matériaux photocatalytiques semi-conducteurs
  • NF B44-103*NF ISO 10677:2011 Fine ceramics (advanced ceramics, advanced technical ceramics) - Ultraviolet light source for testing semiconducting photocatalytic materials
  • NF C96-045:1992 Semiconductors devices. Integrated circuits. Part 11 : sectional specification for semiconducteur integrated circuits excluding hybrid circuits
  • NF C86-503:1986 Semiconductor devices. Harmonized system of quality assessment for electronic components. Phototransistors, photodarlington transistors and phototrasistor-arrays. Blank detail specification CECC 20 003.
  • NF S11-698:1998 Ophthalmic optics. Contact lenses. Ageing by exposure to UV and visible radiation (in vitro method).
  • NF C96-005-5*NF EN IEC 60747-5-5:2020 Semiconductor devices - Part 5-5 : optoelectronic devices - Photocouplers
  • NF EN IEC 60747-5-5:2020 Dispositifs à semiconducteurs - Partie 5-5 : dispositifs optoélectroniques - Photocoupleurs
  • NF C96-013-4/A2*NF EN 60191-4/A2:2003 Mechanical standardization of semiconductor devices - Part 4 : coding system and classification into forms of package outlines for semiconductor device packages.
  • NF C96-013-4*NF EN 60191-4:2014 Mechanical standardization of semiconductor devices - Part 4 : coding system and classification into forms of package outlines for semiconductor device packages
  • NF EN 60191-6:2011 Normalisation mécanique des dispositifs à semiconducteurs - Partie 6 : règles générales pour la préparation des dessins d'encombrement des boîtiers pour dispositifs à semiconducteurs pour montage en surface
  • NF C93-801-2*NF EN 62007-2:2009 Semiconductor optoelectronic devices for fibre optic system applications - Part 2 : measuring methods
  • NF C96-013-4*NF EN 60191-4:2000 Mechanical standardization of semiconductor devices - Part 4 : coding system and classification into forms of package outlines for semiconductor device packages.
  • NF C96-013-4/A1*NF EN 60191-4/A1:2002 Mechanical standardization of semiconductor devices - Part 4 : coding system and classification into forms of package outlines for semiconductor device packages.
  • NF C96-013-6*NF EN 60191-6:2011 Mechanical standardization of semiconductor devices - Part 6 : general rules for the preparation of outline drawings of surface mounted semiconductor device packages
  • NF C96-013-4/A1*NF EN 60191-4/A1:2018 Mechanical standardization of semiconductor devices - Part 4 : coding system and classification into forms of package outlines for semiconductor device packages
  • NF EN 17178:2019 Produits pétroliers liquides - Détermination de la teneur en soufre volatil dans les gaz de pétrole liquéfiés par spectroscopie de fluorescence ultra-violette
  • NF C96-005-5/A1*NF EN 60747-5-5/A1:2015 Semiconductor devices - Discrete devices - Part 5-5 : optoelectronic devices - Photocouplers
  • NF C96-005-5*NF EN 60747-5-5:2012 Semiconductor devices - Discrete devices - Part 5-5 : optoelectronic devices - Photocouplers
  • NF EN 62007-2:2009 Dispositifs optoélectroniques à semiconducteurs pour application dans les systèmes à fibres optiques - Partie 2 : méthodes de mesure
  • XP CEN/TS 16599:2014 Photocatalyse - Détermination des conditions d'irradiation pour tester les propriétés photocatalytiques de matériaux semi-conducteurs

国家市场监督管理总局、中国国家标准化管理委员会, UV semiconductor

  • GB/T 37131-2018 Nanotechnologies—Test method of semiconductor nanopowder using UV-Vis diffuse reflectance spectroscopy
  • GB/T 7092-2021 Outline dimensions of semiconductor integrated circuits
  • GB/T 15879.4-2019 Mechanical standardization of semiconductor devices—Part 4: Coding system and classification into forms of package outlines for semiconductor device packages
  • GB/T 36358-2018 Semiconductor optoelectronic devices—Blank detail specification for power light-emitting diodes
  • GB/T 39771.2-2021 Optical radiation safety of LEDs—Part 2: Measurement methods
  • GB/T 21548-2021 Methods of measurement of the high speed semiconductor lasers directly modulated for optical fiber communication systems
  • GB/T 36646-2018 Equipment for preparation of nitride semiconductor materials by hydride vapor phase epitaxy

Professional Standard - Electron, UV semiconductor

  • SJ/T 11818.1-2022 Semiconductor UV-emitting diodes Part 1: Test methods
  • SJ/T 11818.2-2022 Semiconductor UV Emitting Diodes Part 2: Chip Specifications
  • SJ/T 11818.3-2022 Semiconductor UV-emitting diodes Part 3: Device Specifications
  • SJ 2684-1986 Physical Demensions For Light Emitting Device Of Semiconductor
  • SJ 2247-1982 Outlines dimension for semiconductor optoelectronic devices
  • SJ 2750-1987 Outline dimensions for semiconductor laser diodes
  • SJ 2658.1-1986 Methods of measurement for semiconductor infrared diodes General rules
  • SJ 20744-1999 General rule of infrared absorption spectral analysis for the impurity concentration in semiconductor materials
  • SJ 50033/109-1996 Semiconductor optoelectronic devices.Detail specification for types GJ9031T and GJ9032T and GJ9034T semiconductor laser diodes
  • SJ/T 11397-2009 Phosphors for light emitting diodes
  • SJ 20642-1997 Semiconductor opto-electronic module General specification for
  • SJ 20786-2000 General specification for semiconductor opto-electronic assembly
  • SJ 2218-1982 Semiconductor photocouplers in the diode mode
  • SJ 2219-1982 Semiconductor photocouplers in the transistor mode
  • SJ 2658.6-1986 Methods of measurement for semiconductor infrared diodes Methods of measurement for output optical power
  • SJ 20072-1992 Detail specification for semiconductor opto-couplers for type GH24,GH25 and GH26
  • SJ 50033/110-1996 Semiconductor optoelectronic devices.Detail specification for type GR9413 infrared light emitting diode
  • SJ 53930/1-2002 Semiconductor optoelectronic devices Detail specification for type GR8813 infrared emitting diode
  • SJ 2658.4-1986 Methods of measurement for semiconductor infrared diodes Methods of measurement for capacitance
  • SJ 2658.12-1986 Methods of measurement for semiconductor infrared diodes Methods of measurement for peak emission wavelength and spectral half width
  • SJ 2220-1982 Semiconductor photocouplers in the Darlington transistor mode
  • SJ 2558-1984 Detail specification for semiconductor light emitting numeric displays,Type SM1~18
  • SJ 2658.2-1986 Methods of measurement for semiconductor infrared diodes Methods of measurement for forward voltage drop
  • SJ 2658.3-1986 Methods of measurement for semiconductor infrared diodes Methods of measurement for backward voltage
  • SJ/T 2215-2015 Measuring methods for semiconductor photocouplers
  • SJ 2749-1987 Method of measurement for semiconductor laser diodes
  • SJ 2214.1-1982 General procedures of measurement for semiconductor photodiodes and phototransistors
  • SJ/T 11394-2009 Measure methods of semiconductor light emitting diodes
  • SJ/T 2214-2015 Measuring methods for semiconductor photodiode and phototransistor
  • SJ 2658.7-1986 Methods of measurement for semiconductor infrared diodes Methods of measurement for radiant flux
  • SJ 2658.10-1986 Methods of measurement for semiconductor infrared diodes Methods of measurement for modulated wideband
  • SJ/T 11856.3-2022 Technical Specifications for Semiconductor Laser Chips for Optical Fiber Communications Part 3: Electric Absorption Modulated Semiconductor Laser Chips for Light Sources
  • SJ 2355.1-1983 General procedures of measurement for light-emitting deivces
  • SJ 2215.1-1982 General procedures of measurement for semiconductor photocouplers
  • SJ/T 11856.2-2022 Technical Specifications for Semiconductor Laser Chips for Optical Fiber Communications Part 2: Vertical Cavity Surface Emitting Semiconductor Laser Chips for Light Sources
  • SJ 2658.13-1986 Methods of measurement for semiconductor infrared diodes Methods of measurement for output optical power temperature coefficient
  • SJ/T 2658.16-2016 Measuring method for semiconductor infrared-emitting diode.Part 16: Photo-electric conversion efficiency
  • SJ 50923/2-1995 Detail specification for type G2-01B-M1,G2-01B-Z1 metal case for semiconductor photosensitive devices
  • SJ 2658.8-1986 Methods of measurement for semiconductor infrared diodes Methods of measurement for normal radiance
  • SJ 50033.40-1994 Detail specification for type GT11 semiconductor sililcon NPN photo-transistor
  • SJ 50033/4-1994 Semiconductor discrete device.Detail specification for semiconductor red light emitting diodes for type GF 111 of GP and GT classes
  • SJ 50033/6-1994 Semiconductor discrete device.Detail specification for semiconductor light green emitting diodes for type GF 411 of GP and GT classes
  • SJ 50033/5-1994 Semiconductor discrete device.Detail specification for semiconductor yellow light emitting diodes for type GF 311 of GP and GT classes
  • SJ 50033/3-1994 Semiconductor discrete device.Detail specification for semiconductor opto-couplers for type GH21,GH22 and GH23 of GP,GT and GCT classes
  • SJ 2214.10-1982 Method of measurement for light current of semiconductor photodiodes and phototransistors
  • SJ 20642.5-1998 Semiconductor optoelectronic module Detail specification for type GH82 opto-couplers
  • SJ 20642.4-1998 Semiconductor optoelectronic module Detail specification for type GH81 opto-couplers
  • SJ 20642.6-1998 Semiconductor opto-electronic module Detail specification for type GH83 opto-couplers
  • SJ/T 11402-2009 Technical specification of semiconductor laser chip used in optical fiber communication
  • SJ 2658.5-1986 Methods of measurement for semiconductor infrared diodes Methods of measurement for forward series resistance
  • SJ 2658.11-1986 Methods of measurement for semiconductor infrared diodes Methods of measurement for pulse response characteristics
  • SJ 50923/1-1995 Detail specification for types A6-02A-M2(Z2)and A6-01B-M1(Z1)metal case for semiconductor photocouplers
  • SJ/T 11399-2009 Measurement methods for chips of light emitting diodes
  • SJ/T 11401-2009 Series program for semiconductor light emitting diodes
  • SJ 50033/111-1996 Semiconductor optoelectronic devices.Delail specification for type GT16 Si.NPN phototransistor
  • SJ 50033/41-1994 Detail specification for type GR9414 semiconductor infrared light eitting diode
  • SJ 2658.9-1986 Methods of measurement for semiconductor infrared diodes Methods of measurement for the intensity space distribution and half-intensity angle of radiation
  • SJ/T 11067-1996 Commonly used terminology for semiconductor photoelectric materials and pyroelectric materials in infrared detecting materials
  • SJ 2355.5-1983 Method of measurement for luminous intensity and half-intensity angle of light-emitting devices
  • SJ/Z 3206.13-1989 General rules for emision spectrum analysis for semiconductor materials
  • SJ 50033/101-1995 Detail specification for semiconductor laser diode modules for type GJ1325
  • SJ 50033/35-1994 Detail specification for type GH30 semiconductor high speed optocoupler
  • SJ 2355.7-1983 Method of measurement for peak emission wavelength and spectral radiation bandwidth of light-emitting devices
  • SJ/Z 9021.4-1987 Mechanical standardization of semiconductor components Part 4 Classification and coding system for package outlines of semiconductor components
  • SJ/T 10308-1992 Detail specification of ceramic flat package for semiconductor integrated circuits
  • SJ/T 10176-1991 Detail specification of metal rhomb package for semiconductor integrated circuits
  • SJ/T 11856.1-2022 Technical Specifications for Semiconductor Laser Chips for Optical Fiber Communications Part 1: Fabry-Perot Type and Distributed Feedback Type Semiconductor Laser Chips for Light Sources
  • SJ 50033/112-1996 Scmiconductor optoelectronic devices.Detail specification for type GD3251Y photodiodes
  • SJ 2355.6-1983 Method of measurement for luminous flux of light-emitting devices
  • SJ 50033/113-1996 Semiconductor optoelectronic devices.Detail specification for type GD3252Y photodiodes
  • SJ 2214.3-1982 Method of measurement for dark current of semiconductor photodiodes
  • SJ 2214.5-1982 Method of measurement for junction capacitance of semiconductor photodiodes
  • SJ 2214.8-1982 Method of measurement for dark current voltage of semiconductor phototransistors
  • SJ/T 11398-2009 Technical specification for power light-emitting diode chips
  • SJ 20642.3-1998 Semiconductor opto-electronic module Detail specification for type GD83 PIN-FET opto-receiver module
  • SJ 20644.1-2001 Semiconductor optoelectronic devices Detail specification for type GD3550Y PIN photodiode
  • SJ 20644.2-2001 Semiconductor optoelectronic devices Detail specification for type GD101 PIN photodiode
  • SJ 20642.2-1998 Semiconductor opto-electronic module Detail specification for type GD82 PIN-FET opto-receiver module
  • SJ 2214.2-1982 Method of measurement for forward voltage of semiconductor photodiodes
  • SJ 2214.7-1982 Method of measurement for saturation voltage of semiconductor phototransistors
  • SJ 20957-2006 General specification for large power semiconductor laser diode array
  • SJ 20786.1-2002 Semiconductor photoelectric assembly Detail specification for miniature duplex photoelectric localizer for type CBGS 2301
  • SJ 50033/136-1997 Semiconductor optoelectronic devices.Detail specification for red light emitting diode for type GF116
  • SJ 50033/143-1999 Semiconductor optoelectronic devices.Detail specification for type GF1120 red emitting diode
  • SJ 50033/137-1997 Semiconductor optoelectronic devices.Detail specification for orange-red light emitting diode for type GF216
  • SJ 20642.1-1998 Semiconductor opto-electronic module Detail specification for type GD81 PIN-FET opto-receiver module
  • SJ/T 11405-2009 Semiconductor optoelectronic devices for fibre optic system applications.Part 2:Measuring methods
  • SJ 50033/139-1998 Semiconductor optoelectronic devices.Detail specification for green light-emitting diode for type GF4111
  • SJ 50033/138-1998 Semiconductor optoelectronic devices.Detail specification for yellow light-emitting diode for type GF318
  • SJ 50033/58-1995 Semiconductor optoelectronic device Detail specification for green light emitting diode for type GF413
  • SJ/T 11393-2009 Semiconductor optoelectronic devices-Blank detail specification for power light-emitting diodes
  • SJ 50033/142-1999 Semiconductor optoelectronic devices.Detail specification for type GF4112 green emitting diode
  • SJ 50033/57-1995 Semiconductor optoelectronic device Detail specification for red light emitting diode for type GF115
  • SJ/T 10307-1992 Detail specification of frit-seal ceramic flat package for semiconductor integrated circuits
  • SJ 2757-1987 Method of measurement by infra-red reflection for charge carrier concentraiton of heavily doped semiconductors
  • SJ 51420/1-1996 Detail specification of type D ceramic DIP for semiconductor integrated circuits
  • SJ 51420/2-1998 Detail specification of Type F ceramic FP for semiconductor integrated circuits
  • SJ 51420/3-2003 Detail specification of ceramic PGA for semiconductor integrated circuits
  • SJ/T 11866-2022 Semiconductor optoelectronic devices - Detailed specifications for silicon substrate white light power light emitting diodes
  • SJ/T 11400-2009 Semiconductor optoeletronic devices-Blank detail specification for lower-power light-emitting diodes
  • SJ 2215.6-1982 Method of measurement for junction capacitance of semiconductor photocouplers (diodes)
  • SJ 2215.8-1982 Method of measurement for output saturation voltage of semiconductor photocouplers (diodes)
  • SJ/T 2658.1-2015 Measuring method for semiconductor infrared-emitting diode.Part 1: General
  • SJ 20074-1992 Detailed specifications for Jμ8305 programmable peripheral equipment interface of semiconductor integrated circuit
  • SJ/T 2658.12-2015 Measuring method for semiconductor infrared-emitting diode.Part 12: Peak-emission wavelength and spectral radiant bandwidth
  • SJ 50033/99-1995 Semiconductor optoelectronic devices.Detail specification for o/G double colour light emitting diode for type GF511
  • SJ 20642.7-2000 Semiconductor opto-electronic devices Detail specification for type GR1325J light emitting diode module
  • SJ/T 11817-2022 Blank detailed specification for light-emitting diodes for semiconductor optoelectronic devices, filament lamps
  • SJ 2215.14-1982 Method of measurement for input-to-output isolation voltage of semiconductor photocouplers
  • SJ 2215.3-1982 Method of measurement for forward current of semiconductor photocouplers (diodes)
  • SJ 2214.4-1982 Method of measurement for reverse break-down voltage of semiconductor photodiodes
  • SJ 2215.4-1982 Method of measurement for reverse current of semiconductor photocouplers (diodes)
  • SJ 2215.10-1982 Method of measurement for direct current transfer ratio of semiconductor photocouplers
  • SJ 2215.12-1982 Method of measurement for input-to-output capacitance of semiconductor photocouplers
  • SJ 50033/114-1996 Semiconductor optoelectronic devices.Detail specification for type GD3283Y position sensitive detector

Korean Agency for Technology and Standards (KATS), UV semiconductor

  • KS D 2717-2008(2018) Evaluation of metallic/semiconducting ratio of single-walled carbon nanotube soots using UV-VIS-NIR absorption spectroscopy
  • KS C 6942-1999 General rule of laser diode modules for fiber optic transmission
  • KS C 6943-1999 Test methods of laser modules for fiber optic transmission
  • KS C IEC 60748-11:2004 Semiconductor devices-Integrated circuits-Part 11:Sectional specification for semiconductor integrated circuits excluding hybrid circuits
  • KS C IEC 60748-2-9:2002 Semiconductor devices-Integrated circuits-Part 2:Digital integrated circuits-Section 9:Blank detail specification for MOS ultraviolet light erasable electrically programmable read-only memories
  • KS C IEC 60748-2-9-2002(2017) Semiconductor devices-Integrated circuits-Part 2:Digital integrated circuits-Section 9:Blank detail specification for MOS ultraviolet light erasable electrically programmable read-only memories
  • KS C IEC 60748-2-9-2002(2022) Semiconductor devices-Integrated circuits-Part 2:Digital integrated circuits-Section 9:Blank detail specification for MOS ultraviolet light erasable electrically programmable read-only memories
  • KS C IEC 62007-2:2003 Semiconductor optoelectronic devices for fibre optic system applications - Part 2:Measuring methods
  • KS C IEC 60748-11-1:2004 Semiconductor devices-Integrated circuits-Part 11-1:Internal visual examination for semiconductor integrated circuits excluding hybrid circuits
  • KS C IEC 60747-5:2020 Semiconductor devices — Discrete devices —Part 5: Optoelectronic devices
  • KS C IEC PAS 62240-2008(2018) Use of semiconductor devices outside manufacturers specified temperature range
  • KS C IEC 62007-2-2003(2018)

KR-KS, UV semiconductor

  • KS L ISO 10677-2023 Fine ceramics (advanced ceramics, advanced technical ceramics) — Ultraviolet light source for testing semiconducting photocatalytic materials
  • KS C IEC 60747-5-2020 Semiconductor devices — Discrete devices —Part 5: Optoelectronic devices

British Standards Institution (BSI), UV semiconductor

  • BS ISO 10677:2011 Fine ceramics (advanced ceramics, advanced technical ceramics). Ultraviolet light source for testing semiconducting photocatalytic materials
  • BS IEC 60747-5-4:2022 Semiconductor devices - Optoelectronic devices. Semiconductor lasers
  • BS IEC 60747-5-4:2006 Semiconductor devices - Discrete devices - Optoelectronic devices - Semiconductor lasers
  • BS IEC 60747-14-11:2021 Semiconductor devices - Semiconductor sensors. Test method of surface acoustic wave-based integrated sensors for measuring ultraviolet, illumination and temperature
  • 19/30404095 DC BS EN IEC 60747-5-4. Semiconductor devices. Part 5-4. Optoelectronic devices. Semiconductor lasers
  • 23/30473272 DC BS IEC 60747-5-4 AMD 1. Semiconductor devices - Part 5-4. Optoelectronic devices. Semiconductor lasers
  • 19/30390371 DC BS IEC 60747-14-11. Semiconductor devices. Part 14-11. Semiconductor sensors. Test method of surface acoustic wave based integrated sensor for measuring ultra violet, illumination and temperature
  • 18/30362458 DC BS IEC 60747-14-11. Semiconductor devices. Part 14-11. Semiconductor sensors. Test method of surface acoustic wave based integrated sensor for measuring ultra violet, illumination and temperature
  • BS EN IEC 60747-5-5:2020 Semiconductor devices. Optoelectronic devices. Photocouplers
  • BS IEC 60748-11:2000 Semiconductor devices - Integrated circuits - Sectional specification for semiconductor integrated circuits excluding hybrid circuits
  • BS IEC 60748-11:1991 Semiconductor devices. Integrated circuits. Sectional specification for semiconductor integrated circuits excluding hybrid circuits
  • BS EN 62007-2:2000 Semiconductor optoelectronic devices for fibre optic system applications - Measuring methods
  • BS EN ISO 11985:1998 Ophthalmic optics - Contact lenses - Ageing by exposure to UV and visible radiation (in vitro method)
  • BS EN 62007-2:2009 Semiconductor optoelectronic devices for fibre optic system applications - Measuring methods
  • PD IEC TR 61292-9:2023 Tracked Changes. Optical amplifiers. Semiconductor optical amplifiers (SOAs)
  • BS EN 60191-4:2014 Mechanical standardization of semiconductor devices. Coding system and classification into forms of package outlines for semiconductor device packages
  • BS EN 60191-4:2014+A1:2018 Mechanical standardization of semiconductor devices - Coding system and classification into forms of package outlines for semiconductor device packages
  • BS ISO 17915:2018 Optics and photonics. Measurement method of semiconductor lasers for sensing
  • BS EN 60747-5-5:2011 Semiconductor devices. Discrete devices. Optoelectronic devices. Photocouplers
  • BS EN 60191-6:2010 Mechanical standardization of semiconductor devices. General rules for the preparation of outline drawings of surface mounted semiconductor device packages
  • BS EN 60191-6:2005 Mechanical standardization of semiconductor devices - General rules for the preparation of outline drawings of surface mounted semiconductor device packages
  • BS EN 60191-6:2004 Mechanical standardization of semiconductor devices-Part 6:General rules for the preparation of outline drawings of surface mounted semiconductor device packages
  • BS EN 60191-6:2009 Mechanical standardization of semiconductor devices - General rules for the preparation of outline drawings of surface mounted semiconductor device packages
  • BS EN 62007-1:2000 Semiconductor optoelectronic devices for fibre optic system applications - Essential ratings and characteristics
  • BS QC 790106:1995 Specification for harmonized system of quality assessment for electronic components. Semiconductor devices. Integrated circuits. Digital integrated circuits. Blank detail specification. MOS ultraviolet light erasable electrically programmable read-only...
  • BS IEC 60747-18-4:2023 Semiconductor devices - Semiconductor bio sensors. Evaluation method of noise characteristics of lens-free CMOS photonic array sensors
  • BS EN 60191-6-18:2010 Mechanical standardization of semiconductor devices. General rules for the preparation of outline drawings of surface mounted semiconductor device packages. Design guide for ball grid array (BGA)
  • BS IEC 60747-18-2:2020 Semiconductor devices. Semiconductor bio sensors. Evaluation process of lens-free CMOS photonic array sensor package modules
  • BS IEC 60747-18-5:2023 Semiconductor devices - Semiconductor bio sensors. Evaluation method for light responsivity characteristics of lens-free CMOS photonic array sensor package modules by incident angle of light
  • BS EN 61207-7:2014 Expression of performance of gas analyzers. Tuneable semiconductor laser gas analyzers
  • BS EN 61207-7:2013 Expression of performance of gas analyzers. Tuneable semiconductor laser gas analyzers
  • BS EN 60191-6-21:2010 Mechanical standardization of semiconductor devices. General rules for the preparation of outline drawings of surface mounted semiconductor device packages. Measuring methods for package dimensions of small outline packages (SOP)
  • PD IEC TR 60747-5-12:2021 Semiconductor devices. Optoelectronic devices. Light emitting diodes. Test method of LED efficiencies
  • BS PD ISO/TS 17466:2015 Use of UV-Vis absorption spectroscopy in the characterization of cadmium chalcogenide colloidal quantum dots
  • PD ISO/TS 17466:2015 Use of UV-Vis absorption spectroscopy in the characterization of cadmium chalcogenide colloidal quantum dots
  • BS EN 60191-6-10:2003 Mechanical standardization of semiconductor devices - Part 6-10:General rules for the preparation of outline drawings of surface mounted semiconductor device packages - Dimensions of P-VSON
  • BS IEC 60747-5-1:1998 Discrete semiconductor devices and integrated circuits. Optoelectronic devices. General
  • BS EN 60747-5-1:1998 Discrete semiconductor devices and integrated circuits. Optoelectronic devices. General
  • BS EN 60747-5-1:2001 Discrete semiconductor devices and integrated circuits - Optoelectronic devices - General
  • BS EN 14255-4:2006 Measurement and assessment of personal exposures to incoherent optical radiation - Terminology and quantities used in UV-, visible and IR-exposure measurements
  • PD IEC/PAS 62240:2001 Use of semiconductor devices outside manufacturer's specified temperature ranges
  • BS EN 60749-3:2017 Semiconductor devices. Mechanical and climatic test methods - External visual examination
  • BS IEC 63229:2021 Semiconductor devices. Classification of defects in gallium nitride epitaxial film on silicon carbide substrate
  • BS IEC 60747-18-3:2019 Semiconductor devices. Semiconductor bio sensors. Fluid flow characteristics of lens-free CMOS photonic array sensor package modules with fluidic system
  • BS IEC 60747-18-1:2019 Semiconductor devices. Semiconductor bio sensors. Test method and data analysis for calibration of lens-free CMOS photonic array sensors
  • BS IEC 63068-3:2020 Semiconductor devices. Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer for power devices - Test method for defects using photoluminescence
  • BS EN 17178:2019 Liquid petroleum products. Determination of the total volatile sulfur content in liquefied petroleum gases by ultraviolet fluorescence spectroscopy

Military Standard of the People's Republic of China-General Armament Department, UV semiconductor

  • GJB 33/15-2011 Semiconductor optoelectronic device.Detail specification for type BT401 semiconductor infrared-emitting diode
  • GJB 8190-2015 General specification for semiconductor solid-state light sources for aircraft exterior lighting
  • GJB 33/16-2011 Semiconductor optoelectronic device.Detail specification for type 3DU32 semiconductor phototransistor
  • GJB 33/17-2011 Semiconductor optoelectronic device.Detail specification for type GO11 semiconductor photocoupler
  • GJB/Z 41.3-1993 Military semiconductor discrete device series spectrum semiconductor optoelectronic devices
  • GJB 33/18-2011 Semiconductor optoelectronic device.Detail specification for type GO417 bidirectional analog switch semiconductor photocoupler
  • GJB 1420A-1999 General Specification for Semiconductor Integrated Circuit Enclosures
  • GJB 8121-2013 General specification for semiconductor optoelectronic assembly
  • GJB 8120-2013 General specification for semiconductor optoelectronic module
  • GJB 3519-1999 General Specification for Semiconductor Laser Diodes
  • GJB 1420B-2011 General specification for packages of semiconductor integrated circuits
  • GJB 923A-2004 General specification for packages of semiconductor discrete devices
  • GJB 923B-2021 General Specification for Semiconductor Discrete Device Enclosures
  • GJB 8119-2013 General specification for semiconductor optoelectronic device
  • GJB 2146A-2011 General specification for semiconductor light-emitting diode devices
  • GJB 1934-1994 General specification for semi-rigid coaxial radio frequency cables with wrinkled outer conductors
  • GJB 1557A-2021 Semiconductor discrete device microwave diode dimensions
  • GJB 1557-1992 Semiconductor discrete device microwave diode dimensions
  • GJB 1934A-2009 Cables,raido frequency,coaxial,semirigid,corrugated outer conductor,general specification for
  • GJB 1420/1-2000 Detailed specification for ceramic dual-row enclosures for semiconductor integrated circuits
  • GJB 33/20-2011 Semiconductor optoelectronic device.Detail specification for type GH302 photocoupler
  • GJB 33/22-2011 Semiconductor optoelectronic device.Detail specification for type GO103 photocoupler
  • GJB 1420B-2011(XG1-2015) Modification sheet of general specifications for semiconductor integrated circuit enclosures 1-2015
  • GJB 33/21-2011 Semiconductor optoelectronic device.Detail specification for GD310A series photocopier
  • GJB 33/23-2011 Semiconductor optoelectronic device.Detail specification for type GH3201Z-4 photocoupler
  • GJB 33/19-2011 Semiconductor optoelectronic device.Detail specification for type GH302-4 photocoupler
  • GJB 5018-2001 General requirements for screening and acceptance of semiconductor optoelectronic devices

Society of Automotive Engineers (SAE), UV semiconductor

International Electrotechnical Commission (IEC), UV semiconductor

  • IEC 60747-5-4:2022 Semiconductor devices - Part 5-4: Optoelectronic devices - Semiconductor lasers
  • IEC 60747-5-4:2006 Semiconductor devices - Discrete devices - Part 5-4: Optoelectronic devices - Semiconductor lasers
  • IEC 60747-14-11:2021 Semiconductor devices - Part 14-11: Semiconductor sensors - Test method of surface acoustic wave-based integrated sensors for measuring ultraviolet, illumination and temperature
  • IEC TR 61292-9:2013 Optical amplifiers - Part 9: Semiconductor optical amplifiers (SOAs)
  • IEC TR 61292-9:2023 RLV Optical amplifiers - Part 9: Semiconductor optical amplifiers (SOAs)
  • IEC TR 61292-9:2023 Optical amplifiers - Part 9: Semiconductor optical amplifiers (SOAs)
  • IEC 60191-4:2013+AMD1:2018 CSV Mechanical standardization of semiconductor devices - Part 4: Coding system and classification into forms of package outlines for semiconductor device packages
  • IEC 60747-5-7:2016 Semiconductor devices - Part 5-7: Optoelectronic devices - Photodiodes and phototransistors
  • IEC 60747-5-6:2016 Semiconductor devices - Part 5-6: Optoelectronic devices - Light emitting diodes
  • IEC 60747-5-6:2021 Semiconductor devices - Part 5-6: Optoelectronic devices - Light emitting diodes
  • IEC 60191-4:2002 Mechanical standardization of semiconductor devices - Part 4: Coding system and classification into forms of package outlines for semiconductor device packages
  • IEC 60191-4:1987 Mechanical standardization of semiconductor devices. Part 4 : Coding system and classification into forms of package outlines for semiconductor devices
  • IEC 62007-2:1997 Semiconductor optoelectronic devices for fibre optic system applications - Part 2: Measuring methods
  • IEC 60747-5-6:2021 RLV Semiconductor devices - Part 5-6: Optoelectronic devices - Light emitting diodes
  • IEC 60747-5-5:2020 Semiconductor devices - Part 5-5: Optoelectronic devices - Photocouplers
  • IEC 60191-4:1999 Mechanical standardization of semiconductor devices - Part 4: Coding system and classification into forms of package outlines for semiconductor device packages
  • IEC 60191-4:2013 Mechanical Standardization of Semiconductor Devices - Part 4: Coding system and classification into forms of package outlines for semiconductor device packages
  • IEC 60191-4:2018 Mechanical Standardization of Semiconductor Devices - Part 4: Coding system and classification into forms of package outlines for semiconductor device packages
  • IEC 60191-6:1990 Mechanical standardization of semiconductor devices; part 6: general rules for the preparation of outline drawings of surface mounted semiconductor device packages
  • IEC 60191-6:2004 Mechanical standardization of semiconductor devices - Part 6: General rules for the preparation of outline drawings of surface mounted semiconductor device packages
  • IEC 60191-6:2009 Mechanical standardization of semiconductor devices - Part 6: General rules for the preparation of outline drawings of surface mounted semiconductor device packages
  • IEC PAS 62240:2001 Use of semiconductor devices outside manufacturer's specified temperature ranges
  • IEC 60191-4/AMD1:2001 Mechanical standardization of semiconductor devices - Part 4: Coding system and classification into forms of package outlines for semiconductor device packages; Amendment 1
  • IEC 60191-4/AMD2:2002 Mechanical standardization of semiconductor devices - Part 4: Coding system and classification into forms of package outlines for semiconductor device packages; Amendment 2
  • IEC 62007-2:1999 Semiconductor optoelectronic devices for fibre optic system applications - Part 2: Measuring methods
  • IEC 60747-18-2:2020 Semiconductor devices - Part 18-2: Semiconductor bio sensors - Evaluation process of lens-free CMOS photonic array sensor package modules
  • IEC 60191-6/AMD1:1999 Mechanical standardization of semiconductor devices - Part 6: General rules for the preparation of outline drawings of surface mounted semiconductor device packages; Amendment 1
  • IEC 60191-4:2013/AMD1:2018 Mechanical standardization of semiconductor devices - Part 4: Coding system and classification into forms of package outlines for semiconductor device packages; Amendment 1
  • IEC 60747-5-5:2007/AMD1:2013 Semiconductor devices - Discrete devices - Part 5-5: Optoelectronic devices - Photocouplers
  • IEC 60747-5-5:2013 Semiconductor devices.Discrete devices.Part 5-5: Optoelectronic devices.Photocouplers

General Administration of Quality Supervision, Inspection and Quarantine of the People‘s Republic of China, UV semiconductor

  • GB/T 15167-1994 General specification for light source of semiconductor lasers
  • GB/T 31358-2015 General specification for semiconductor lasers
  • GB/T 29856-2013 Characterization of semiconducting single-walled carbon nanotubes using near infrared photoluminescence spectroscopy
  • GB 15651.4-2017 Semiconductor devices Discrete devices Part 5-4: Optoelectronic devices Semiconductor lasers
  • GB/T 7092-1993 Qutline dimensions of semiconductor integrated circuits
  • GB/T 7581-1987 Dimensions of outlines for semiconductor discrete devices
  • GB/T 31359-2015 Test methods of semiconductor lasers
  • GB/T 17574.9-2006 Semiconductor devices.Integrated circuits.Part 2-9:Digital integrated circuits.Blank detail specification for MOS ultraviolet light erasable electrically programmable read-only memories
  • GB 12565-1990 Sectional Specification for Semiconductor Devices and Optoelectronic Devices
  • GB/T 11417.9-2012 Ophthalmic optics.Contact lenses.Part 9:Ageing by exposure to UV and visible radiation(in vitro method)
  • GB/T 11493-1989 Blank detail specification of packages for semiconductor integrated circuits
  • GB/T 15529-1995 Blank detail specification for LED numeric displays
  • GB/T 15649-1995 Blank detail specification for semiconductor laser diodes
  • GB/T 29299-2012 General specification of semiconductor laser rangefinder
  • GB/T 36356-2018 Technical specification for power light-emitting diode chips
  • GB/T 15878-2015 Semiconductor integrated circuits.Specification of leadframes for small outline package
  • GB/T 15651.6-2023 Semiconductor Devices Part 5-6: Optoelectronic Devices Light Emitting Diodes
  • GB/T 36357-2018 Technical specification for middle power light-emitting diode chips
  • GB/T 21548-2008 Methods of measurement of the high speed semiconductor lasers directly modulated for optical fiber communication systems
  • GB/T 14862-1993 Junction-to-case thermal resistance test methods of packages for semiconductor integrated circuits
  • GB/T 24370-2009 Characterization of CdSe quantum dot nanocrystals.UV-Vis absorption spectroscopy
  • GB/T 36359-2018 Semiconductor optoelectronic devices.Blank detail specification for lower power light-emitting diodes
  • GB/T 36360-2018 Semiconductor optoelectronic devices.Blank detail specification for middle power light-emitting diodes
  • GB/T 12565-1990 Semiconductor devices--Sectional specification for optoelectronic devices

Group Standards of the People's Republic of China, UV semiconductor

Jilin Provincial Standard of the People's Republic of China, UV semiconductor

RU-GOST R, UV semiconductor

  • GOST 24458-1980 Semiconductor optoelectronic couplers. Essential parameters
  • GOST R 50471-1993 Semiconductor photoemitters. Measuring method for halfintensity angle
  • GOST 23900-1987 Power semiconductor devices. Overall and mounting dimensions
  • GOST 23448-1979 Semiconductor infra-red emitting diodes. Basic dimensions
  • GOST 27591-1988 Power semiconductor modules. Orerall and mounting dimensions
  • GOST 19834.4-1979 Semiconductor radiating infra-red diodes. Methods of measurement of radiation power
  • GOST 27299-1987 Semiconductor optoelectronic devices. Terms, definitions and letter symbols of parameters
  • GOST R 59605-2021 Optics and photonics. Semiconducting photoelectric detectors. Photoelectric and photoreceiving devices. Terms and definitions
  • GOST 17704-1972 Semiconductor devices. Photoelectric receivers of radiant energy. Classification and system designations
  • GOST 21934-1983 Semiconducting photoelectric detectors and receiving photoelectric devices. Terms and definitions

中华人民共和国国家质量监督检验检疫总局、中国国家标准化管理委员会, UV semiconductor

  • GB/T 15651.4-2017 Semiconductor devices—Discrete devices—Part 5-4:Optoelectronic devices—Semiconductor lasers

Professional Standard - Nuclear Industry, UV semiconductor

  • EJ/T 296.2-2014 Determination of trace uranium in urine liquid fluorometry by ultraviolet
  • EJ/T 20057-2014 Determination of uranium concentration in atmospheric fallout.Liquid fluorometry by ultraviolet

International Organization for Standardization (ISO), UV semiconductor

  • ISO 10677:2011 Fine ceramics (advanced ceramics, advanced technical ceramics) - Ultraviolet light source for testing semiconducting photocatalytic materials
  • ISO/TS 17915:2013 Optics and photonics.Measurement method of semiconductor lasers for sensing
  • ISO 17915:2018 Optics and photonics - Measurement method of semiconductor lasers for sensing
  • ISO/TS 17466:2015 Use of UV-Vis absorption spectroscopy in the characterization of cadmium chalcogenide colloidal quantum dots

机械工业部, UV semiconductor

Fujian Provincial Standard of the People's Republic of China, UV semiconductor

Defense Logistics Agency, UV semiconductor

Professional Standard - Machinery, UV semiconductor

  • JB/T 5631-1991 Epitaxial furnace for semiconductor devices. Energy efficiency standard
  • JB/T 8175-1999 Outline dimensions of extruded heat sink for power semiconductor devices

IN-BIS, UV semiconductor

Taiwan Provincial Standard of the People's Republic of China, UV semiconductor

  • CNS 13805-1997 Method of Measurement for Photoluminescence of Optoelectronic Semiconductor Wafers

RO-ASRO, UV semiconductor

  • STAS 12258/6-1987 OPTOELECTRONIC SEMICON- DUCTOR DEVICES INFRARED EMM1TING DIODES Terminology and essential characteristics
  • STAS 12258/3-1985 Optoelectronic semiconductor devices PHOTOTRANSISTORS Terminology and essential characteristics
  • STAS 12258/7-1987 OPTOELECTRONIC SEMICONDIC- TOH DEVICES PHOTOVOLTAIC CELLS Terminology and essential cliarac! eristics
  • STAS 12258/2-1984 Optoelectronic semiconductor devices PIIOTODIODES Terminology and essentia] characteristics
  • STAS 12258/4-1986 Optoelectronic semiconductor devices LIGHT EMITTING DIODES Terminology and main characteristics
  • STAS 12258/5-1986 OPTOELECTRONIG SEMICONDUCTOR DEVICES DISPLAYS Terminology and essential characteristres
  • STAS 12258/1-1984 OPTOELECTRONIC SEMICONDUCTOR DEVICES General terminology and nomencla- ture of general basic parameters
  • SR CEI 748-11-1-1992 Semiconductor devices Integrated circuits Part 11: Section 1: Internai visual examination for semiconductor integrated circuits excluding hybrid circuits

(U.S.) Joint Electron Device Engineering Council Soild State Technology Association, UV semiconductor

HU-MSZT, UV semiconductor

IET - Institution of Engineering and Technology, UV semiconductor

PL-PKN, UV semiconductor

  • PN T01305-1992 Semiconductor devices. Integrated circuits. Sectional specificatiion for semiconductor integrated circuits excluding hybrid circuits

German Institute for Standardization, UV semiconductor

  • DIN 41885:1976 Cases type 101 for semiconductor devices; main dimensions
  • DIN 41877:1971 Case 6 A 3 for semiconductor devices; main dimensions
  • DIN 41888:1976 Cases type 106 and 107 for semiconductor devices; main dimensions
  • DIN 41871:1971 Cases 1 A 2 and 1 A 3 for semiconductor devices; main dimensions
  • DIN 41884:1971 Case 118 A 2 for semiconductor devices; main dimensions
  • DIN EN 60191-4:2003 Mechanical standardization of semiconductor devices - Part 4: Coding system and classification into forms of package outlines for semiconductor device packages (IEC 60191-4:1999 + A1:2001 + A2:2002); German version EN 60191-4:1999 + A1:2002 + A2:2002
  • DIN 41814-2:1976 Cases for semiconductor devices; cases type 160 to 168, main dimensions
  • DIN EN 60191-6:2010-06 Mechanical standardization of semiconductor devices - Part 6: General rules for the preparation of outline drawings of surface mounted semiconductor device packages (IEC 60191-6:2009); German version EN 60191-6:2009 / Note: DIN EN 60191-6 (2005-04) rem...
  • DIN 50449-2:1998 Testing of materials for semiconductor technology - Determination of impurity content in semiconductors by infrared absorption - Part 2: Boron in gallium arsenide
  • DIN EN 60191-6-8:2002-05 Mechanical standardization of semiconductor devices - Part 6-8: General rules for the preparation of outline drawings of surface mounted semiconductor device packages; Design guide for glass sealed ceramic quad flatpack (G-QFP) (IEC 60191-6-8:2001); Ge...
  • DIN EN 60191-6-2:2002-09 Mechanical standardization of semiconductor devices - Part 6-2: General rules for the preparation of outline drawings of surface mounted semiconductor device packages; Design guide for 1,50 mm, 1,27 mm and 1,00 mm pitch ball and column terminal package...
  • DIN EN 60191-6-6:2002-02 Mechanical standardization of semiconductor devices - Part 6-6: General rules for the preparation of outline drawings of surface mounted semiconductor device packages; Design guide for fine pitch land grid array (FLGA) (IEC 60191-6-6:2001); German vers...
  • DIN EN 60191-6-3:2001-06 Mechanical standardization of semiconductor devices - Part 6-3: General rules for the preparation of outline drawings of surface mounted semiconductor device packages; Measuring methods for package dimensions of quat flat packs (QFP) (IEC 60191-6-3:200...
  • DIN EN 60191-6-1:2002-08 Mechanical standardization of semiconductor devices - Part 6-1: General rules for the preparation of outline drawings of surface mounted semiconductor device packages; Design guide for gull-wing lead terminals (IEC 60191-6-1:2001); German version EN 60...
  • DIN EN 60191-6-5:2002-05 Mechanical standardization of semiconductor devices - Part 6-5: General rules for the preparation of outline drawings of surface mounted semiconductor device packages; Design guide for fine-pitch ball grid array (FBGA) (IEC 60191-6-5:2001); German vers...
  • DIN IEC/TR 61292-9:2013 Optical amplifiers - Part 9: Semiconductor optical amplifiers (SOAs) (IEC 86C/1109/CD:2013)
  • DIN 41867:1972 Cases 50 B3 and 50 B4 for semiconductor devices; main dimensions
  • DIN 41891:1971 Cases 200 A 3 and 200 B 3 for semiconductor devices; main dimensions
  • DIN 50443-1:1988 Testing of materials for use in semiconductor technology; detection of crystal defects and inhomogeneities in silicon single crystals by X-ray topography
  • DIN 5032-9:2015-01 Photometry - Part 9: Measurement of the photometric quantities of incoherent emitting semiconductor light sources
  • DIN EN 60191-6-22:2013-08 Mechanical standardization of semiconductor devices - Part 6-22: General rules for the preparation of outline drawings of surface mounted semiconductor device packages - Design guide for semiconductor packages Silicon Fine-pitch Ball Grid Array and Sil...
  • DIN EN 17178:2018 Liquid petroleum products - Determination of the total volatile sulfur content in liquefied petroleum gases by ultraviolet fluorescence spectroscopy; German and English version prEN 17178:2018
  • DIN EN 17178:2019-12 Liquid petroleum products - Determination of the total volatile sulfur content in liquefied petroleum gases by ultraviolet fluorescence spectroscopy; German version EN 17178:2019
  • DIN EN 60191-6:2010 Mechanical standardization of semiconductor devices - Part 6: General rules for the preparation of outline drawings of surface mounted semiconductor device packages (IEC 60191-6:2009); German version EN 60191-6:2009

Professional Standard - Medicine, UV semiconductor

  • YY 1289-2016 Laser Therapy Equipment Ophthalmic Diode Laser Photocoagulation Instrument
  • YY 0845-2011 Laser therapeutic equipment.Diode laser equipment for photodynamic therapy

Professional Standard - Petrochemical Industry, UV semiconductor

  • SH/T 0409-1992 Determination of Aromatics Content in Liquid Paraffin (UV Spectrophotometry)

CZ-CSN, UV semiconductor

  • CSN 35 8761-1973 Semiconductor devices. Phototransistors photodíodes. Measurement of photoelectric current
  • CSN 35 8762-1973 Semiconductor devices. Phototransistors photodiodes. Measurement of dark current

工业和信息化部, UV semiconductor

  • SJ/T 2749-2016 Semiconductor Laser Diode Test Methods
  • SJ/T 11702-2018 Semiconductor integrated circuit serial peripheral interface test method
  • SJ/T 2658.15-2016 Measurement methods for semiconductor infrared emitting diodes Part 15: Thermal resistance
  • SJ/T 2658.14-2016 Measurement methods for semiconductor infrared emitting diodes Part 14: Junction temperature

American Society for Testing and Materials (ASTM), UV semiconductor

  • ASTM G177-03(2020) Standard Tables for Reference Solar Ultraviolet Spectral Distributions: Hemispherical on 37° Tilted Surface
  • ASTM G177-03(2012) Standard Tables for Reference Solar Ultraviolet Spectral Distributions: Hemispherical on 37deg; Tilted Surface
  • ASTM G177-03 Standard Tables for Reference Solar Ultraviolet Spectral Distributions: Hemispherical on 37 Tilted Surface
  • ASTM G177-03e1 Standard Tables for Reference Solar Ultraviolet Spectral Distributions: Hemispherical on 37 Tilted Surface
  • ASTM G177-03(2008)e1 Standard Tables for Reference Solar Ultraviolet Spectral Distributions: Hemispherical on 37x00B0; Tilted Surface
  • ASTM F584-06 Standard Practice for Visual Inspection of Semiconductor Lead-Bonding Wire
  • ASTM F584-06e1 Standard Practice for Visual Inspection of Semiconductor Lead-Bonding Wire

European Committee for Standardization (CEN), UV semiconductor

  • CWA 17857:2022 Lens-based adaptor system for coupling fibre optic to infrared semiconductor lasers
  • EN ISO 24443:2021 Cosmetics - Determination of sunscreen UVA photoprotection in vitro (ISO 24443:2021, Corrected version 2022-02)
  • EN ISO 24443:2012 Determination of sunscreen UVA photoprotection in vitro

Professional Standard - Post and Telecommunication, UV semiconductor

  • YD/T 701-1993 Test method for semiconductor laser diode assembly
  • YD/T 1687.1-2007 Technical Requirements of High Speed Semiconductor Laser Assembly for Optical Fiber Communication Part 1:2.5Gbit/s Cooled Direct Modulation Semiconductor Laser Assembiy
  • YD/T 1687.2-2007 Technidal Requirements of High Speed Semiconductor Laser Assembly for Optical Fiber Communication Part 2:2.5Gbit/s Uncooled Direct Modulation Semiconductor Laser Assembly
  • YD/T 2001.2-2011 Semiconductor optoelectronic devices for fibre optic system applications.part 2:measuring methods

JP-JEITA, UV semiconductor

  • JEITA ED 7300A-2008 Recommended practice on standard for the preparation of outline drawings of semiconductor package

Danish Standards Foundation, UV semiconductor

  • DS/EN ISO 11985:1998 Ophthalmic optics - Contact lenses - Ageing by exposure to UV and visible radiation (in-vitro method)
  • DS/EN 60191-4/A2:2002 Mechanical standardization of semiconductor devices - Part 4: Coding system and classification into forms of package outlines for semiconductor device packages
  • DS/EN 60191-4:2001 Mechanical standardization of semiconductor devices - Part 4: Coding system and classification into forms of package outlines for semiconductor device packages
  • DS/EN 60191-4/A1:2002 Mechanical standardization of semiconductor devices - Part 4: Coding system and classification into forms of package outlines for semiconductor device packages
  • DS/EN 60191-6:2010 Mechanical standardization of semiconductor devices - Part 6: General rules for the preparation of outline drawings of surface mounted semiconductor device packages
  • DS/IEC 747-12:1993 Semiconductor devices. Part 12: Sectional specification for optoelectronic devices
  • DS/EN 60191-6-22:2013 Mechanical standardization of semiconductor devices - Part 6-22: General rules for the preparation of outline drawings of surface mounted semiconductor device packages - Design guide for semiconductor packages Silicon Fine-pitch Ball Grid Array and Silico
  • DS/IEC 747-5:1986 Semiconductor devices. Discrete devices and integrated circuits. Part 5: Optoelectronic sevices
  • DS/EN 60747-5-5:2011 Semiconductor devices - Discrete devices - Part 5-5: Optoelectronic devices - Photocouplers
  • DS/EN 60191-6-21:2010 Mechanical standardization of semiconductor devices - Part 6-21: General rules for the preparation of outline drawings of surface mounted semiconductor device packages - Measuring methods for package dimensions of small outline packages (SOP)

IEC - International Electrotechnical Commission, UV semiconductor

  • IEC TR 61292-9:2017 Optical amplifiers – Part 9: Semiconductor optical amplifiers (SOAs) (Edition 2.0)

American National Standards Institute (ANSI), UV semiconductor

European Committee for Electrotechnical Standardization(CENELEC), UV semiconductor

  • EN IEC 60747-5-5:2020 Semiconductor devices - Part 5-5: Optoelectronic devices - Photocouplers
  • EN 62007-2:2009 Semiconductor optoelectronic devices for fibre optic system applications - Part 2: Measuring methods
  • EN 60191-6:2009 Mechanical standardization of semiconductor devices - Part 6: General rules for the preparation of outline drawings of surface mounted semiconductor device packages
  • EN 60191-6-22:2013 Mechanical standardization of semiconductor devices - Part 6-22: General rules for the preparation of outline drawings of surface mounted semiconductor device packages - Design guide for semiconductor packages Silicon Fine-pitch Ball Grid Array and Silico

ES-UNE, UV semiconductor

  • UNE-EN IEC 60747-5-5:2020 Semiconductor devices - Part 5-5: Optoelectronic devices - Photocouplers (Endorsed by Asociación Española de Normalización in October of 2020.)
  • UNE-EN 60191-6:2009 Mechanical standardization of semiconductor devices -- Part 6: General rules for the preparation of outline drawings of surface mounted semiconductor device packages (Endorsed by AENOR in April of 2010.)
  • UNE-EN 60191-6-21:2010 Mechanical standardization of semiconductor devices -- Part 6-21: General rules for the preparation of outline drawings of surface mounted semiconductor device packages - Measuring methods for package dimensions of small outline packages (SOP) (Endorse...
  • UNE-EN 60191-6-22:2013 Mechanical standardization of semiconductor devices - Part 6-22: General rules for the preparation of outline drawings of surface mounted semiconductor device packages - Design guide for semiconductor packages Silicon Fine-pitch Ball Grid Array and Sil...
  • UNE-EN 17178:2020 Liquid petroleum products - Determination of the total volatile sulfur content in liquefied petroleum gases by ultraviolet fluorescence spectroscopy
  • UNE-EN 60747-5-5:2011/A1:2015 Semiconductor devices - Discrete devices - Part 5-5: Optoelectronic devices - Photocouplers (Endorsed by AENOR in May of 2015.)
  • UNE-EN 60747-5-5:2011 Semiconductor devices - Discrete devices -- Part 5-5: Optoelectronic devices - Photocouplers (Endorsed by AENOR in May of 2011.)

国家药监局, UV semiconductor

  • YY/T 1751-2020 Laser treatment equipment semiconductor laser intranasal irradiation therapy instrument

Professional Standard - Agriculture, UV semiconductor

  • NY/T 1860.5-2016 Guidelines on the determination of physico-chemical properties of pesticides.Part 5:Ultraviolet / visibility absorption
  • NY/T 1860.5-2010 Guidance on the determination of physico-chemical properties of pesticides.Part 5:Ultraviolet/Visibility absorption

CENELEC - European Committee for Electrotechnical Standardization, UV semiconductor

  • EN 60191-6:2004 Mechanical standardization of semiconductor devices Part 6: General rules for the preparation of outline drawings of surface mounted semiconductor device packages
  • EN 62007-2:2000 Semiconductor Optoelectronic Devices for Fibre Optic System Applications Part 2: Measuring Methods
  • EN 60191-4:2014 Mechanical standardization of semiconductor devices - Part 4: Coding system and classification into forms of package outlines for semiconductor device packages (Incorporates Amendment A1: 2018)

SE-SIS, UV semiconductor

GOSTR, UV semiconductor

  • GOST ISO 20846-2016 Liquid petroleum products. Determination of sulfur content of automotive fuels. Ultraviolet fluorescence method

Japanese Industrial Standards Committee (JISC), UV semiconductor

  • JIS R 1750:2012 Fine ceramics -- Light source for testing semiconducting photocatalytic materials used under indoor lighting environment

(U.S.) Telecommunications Industries Association , UV semiconductor

Lithuanian Standards Office , UV semiconductor

  • LST EN 60191-4+A1-2002 Mechanical standardization of semiconductor devices -- Part 4: Coding system and classification into forms of package outlines for semiconductor device packages (IEC 60191-4:1999+A1:2001)
  • LST EN 60191-4+A1-2002/A2-2002 Mechanical standardization of semiconductor devices. Part 4: Coding system and classification into forms of package outlines for semiconductor device packages (IEC 60191-4:1999/A2:2002)
  • LST EN 60191-6-2010 Mechanical standardization of semiconductor devices - Part 6: General rules for the preparation of outline drawings of surface mounted semiconductor device packages (IEC 60191-6:2009)
  • LST EN 60191-6-22-2013 Mechanical standardization of semiconductor devices -- Part 6-22: General rules for the preparation of outline drawings of surface mounted semiconductor device packages - Design guide for semiconductor packages Silicon Fine-pitch Ball Grid Array and Silic
  • LST EN 60191-4-2014 Mechanical standardization of semiconductor devices - Part 4: Coding system and classification into forms of package outlines for semiconductor device packages (IEC 60191-4:2013)

未注明发布机构, UV semiconductor

  • BS EN ISO 11985:1998(2008) Ophthalmic optics — Contact lenses — Ageing by exposure to UV and visible radiation (in vitro method)

Hebei Provincial Standard of the People's Republic of China, UV semiconductor

  • DB13/T 5120-2019 Specifications for DC performance test of FP and DFB semiconductor laser chips for optical communication

Government Electronic & Information Technology Association, UV semiconductor

  • GEIA-4900-2001 Use of Semiconductor Devices Outside Manufacturers?Specified Temperature Ranges
  • GEIA SP4900-2002 Use of Semiconductor Devices Outside Manufacturers?Specified Temperature Ranges Comment Period Expires: May 27, 2002; ANSI/EIA-4900

SAE - SAE International, UV semiconductor

  • SAE EIA-4900-2016 Use of Semiconductor Devices Outside Manufacturers' Specified Temperature Ranges

IECQ - IEC: Quality Assessment System for Electronic Components, UV semiconductor

  • PQC 8 ISSUE 1-1996 Semiconductor Optoelectronic Devices Blank Detail Specification: Ambient or Case-Rated Photocouplers with Phototransistor Output Assessment Level Categories I@ II or III

PH-BPS, UV semiconductor

  • PNS ISO/TS 17466:2021 Use of UV-Vis absorption spectroscopy in the characterization of cadmium chalcogenide colloidal quantum dots

GM North America, UV semiconductor

  • GM GMP.E/P.030-1991 Polyolefin Alloy - Blow Molding Grade, 85 MPa Flexural Modulus, Integrally Colored, UV Light Stable

AENOR, UV semiconductor

  • UNE-EN 60191-6-10:2004 Mechanical standardization of semiconductor devices -- Part 6-10: General rules for the preparation of outline drawings of surface mounted semiconductor device packages - Dimensions of P-VSON




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