ZH
RU
ES
single crystal
single crystal, Total:332 items.
In the international standard classification, single crystal involves: Semiconducting materials, Non-ferrous metals, Industrial furnaces, Paper and board, Insulating fluids, Vocabularies, Products of non-ferrous metals, Components and accessories for telecommunications equipment, Piezoelectric and dielectric devices, Galvanic cells and batteries, Cutting tools, Machine tools, Powder metallurgy, Occupational safety. Industrial hygiene, Iron and steel products, Installations in buildings, Testing of metals, Solar energy engineering, Fibre optic communications, Semiconductor devices, Products of the chemical industry, Energy and heat transfer engineering in general, Optics and optical measurements, Nuclear energy engineering, Materials for the reinforcement of composites, Integrated circuits. Microelectronics, Ceramics, Optoelectronics. Laser equipment, GENERALITIES. TERMINOLOGY. STANDARDIZATION. DOCUMENTATION, Optical equipment, Conducting materials, Jewellery, Terminology (principles and coordination), Air quality, Elements of buildings, Components for electrical equipment, Radiation measurements, Physics. Chemistry, Glass, Welding, brazing and soldering, Lamps and related equipment, Electronic components in general.
国家市场监督管理总局、中国国家标准化管理委员会, single crystal
- GB/T 5238-2019 Monocrystalline germanium and monocrystalline germanium slices
- GB/T 20230-2022 Indium phosphide single crystal
- GB/T 20229-2022 Gallium phosphide single crystal
- GB/T 20228-2021 Gallium arsenide single crystal
- GB/T 12964-2018 Monocrystalline silicon polished wafers
- GB/T 26069-2022 Annealed monocrystalline silicon wafers
- GB/T 25076-2018 Monocrystalline silicon for solar cell
- GB/T 12965-2018 Monocrystalline silicon as cut wafers and lapped wafers
- GB/T 26071-2018 Monocrystalline silicon wafers for solar cells
- GB/T 39137-2020 Determination for the orientation of refractory metal single crystal
- GB/T 37418-2019 Lutetium oxyorthosilicate, lutetium-yttrium oxyorthosilicate scintillation single crystals
- GB/T 11094-2020 Gallium arsenide single crystal and cutting wafer grown by horizontal bridgman method
- GB/T 5252-2020 Test method for dislocation density of monocrystal germanium
- GB/T 8760-2020 Test method for dislocation density of monocrystal gallium arsenide
- GB/T 41325-2022 Low density crystal originated pit polished monocrystalline silicon wafers for integrated circuit
- GB/T 39123-2020 Specification for cadmium-zinc telluride single crystal material for X-ray and γ-ray detector
- GB/T 1551-2021 Test method for measuring resistivity of monocrystal silicon—In-line four-point probe and direct current two-point probe method
- GB/T 41153-2021 Determination of boron, aluminum and nitrogen impurity content in silicon carbide single crystal—Secondary ion mass spectrometry
General Administration of Quality Supervision, Inspection and Quarantine of the People‘s Republic of China, single crystal
- GB/T 5238-2009 Monocrystalline germanium and monocrystalline germanium slices
- GB/T 5238-2009(英文版) Monocrystalline germanium and monocrystalline germanium slices
- GB/T 12962-1996 Monocrystalline silicon
- GB/T 12962-2005 Monoccrystslline silicon
- GB/T 5238-1995 Monocrystalline germanium
- GB/T 12962-2015 Silicon single crystal
- GB/T 15713-1995 Monocrystalline germanium slices
- GB/T 29504-2013 300 mm monocrystalline silicon
- GB/T 20229-2006 Gallium phosphide signle crystal
- GB/T 20230-2006 Indium phosphide signle crystal
- GB/T 20228-2006 Gallium arsenide single crystal
- GB/T 14843-1993 Lithium niobate single crystals
- GB/T 31092-2014 Monocrystalline sapphire ingot
- GB/T 31092-2022 Monocrystalline sapphire bar
- GB/T 12964-2003 Monocrystalline silicon polished wafers
- GB/T 29506-2013 300 mm polished monocrystalline silicon wafers
- GB/T 30656-2014 Polished monocrystalline silicon carbide wafers
- GB/T 25076-2010 Monocrystalline silicon of solar cell
- GB/T 30656-2023 Silicon carbide single crystal polished wafer
- GB/T 26072-2010 Germanium single crystal solar cell
- GB/T 1555-1997 Test methods for determining the orientation of a semiconductor single crystal
- GB/T 11072-1989 Indium antimonide polycrystal, single crystals and as-cut slices
- GB/T 11072-2009 Indium antimonide polycrystal,single crystals and as-cut slices
- GB/T 1555-2023 Method for Determination of Crystalline Orientation of Semiconductor Single Crystal
- GB/T 1555-2009 Testing methods for determining the orientation of a semiconductor single crystal
- GB/T 12965-1996 Monocrystalline silicon as cut slices and lapped slices
- GB/T 12965-2005 Monocrystalline silicon cut slices and lapped slice
- GB/T 12632-1990 General specification of single silicon solar cells
- GB/T 1551-2009 Test method for measuring resistivity of monocrystal silicom
- GB/T 26065-2010 Specification for polished test silicon wafers
- GB/T 30858-2014 Polished mono-crystalline sapphire substrate product
- GB/T 13843-1992 Polished monocrystalline sapphire substrates
- GB/T 25075-2010 Gallium arsenide single crystal for solar cell
- GB/T 29420-2012 Nd-doped vanadate laser crystal devices
- GB/T 29508-2013 300 mm monocrystalline silicon as cut slices and grinded slices
- GB/T 34213-2023 High-purity alumina for sapphire single crystal
- GB/T 11094-2007 Horizontal bridgman grown gallium arsenide single crystal and cutting wafer
- GB/T 26071-2010 Mono-crystalline silicon as cut slices for photovoltaic solar cells
- GB/T 29421-2012 Vanadate birebringent crystal devices
- GB/T 11094-1989 Boat-grown gallium arsenide single crystals and As-cut slices
- GB/T 9532-2012 Designations for piezoelectric crystals
- GB/T 30866-2014 Test method for measuring diameter of monocrystalline silicon carbide wafers
- GB/T 18032-2000 The inspecting method of AB microscopic defect in gallium arsenide single crystal
- GB/T 32278-2015 Test method for flatness of silicon carbide single wafer
- GB/T 5252-1985 Germanium monocrystal--Inspection of dislocation etch pit density
- GB/T 11093-1989 Liquid encapaulated czochralski-grouwn gallium arsenide single crystals and As-cut slices
- GB/T 5252-2006 Germanium monocrystal.Inspection of dislocation etch pit density
- GB/T 8760-2006 Gallium arsenide single crystal-determination of dislocation density
- GB/T 11093-2007 Liquid encapsulated czochralski-grown gallium arsenide single crystals and as-cut slices
- GB/T 26044-2010 Single crystal round copper wire and drawing stock for signal transmission
- GB 8760-1988 Gallium arsenide single crystal－Determination of dislocation density
- GB/T 41765-2022 Test method for dislocation density of monocrystalline silicon carbide
- GB/T 8760-1988 Gallium arsenide single crystal--Determination of dislocation density
- GB/T 1552-1995 Test method for measuring resistivity of monocrystal silicon and germanium with a collinear four-probe array
- GB/T 1551-1995 Test method for resistivity of silicon and germanium bars using a two-point probe
- GB/T 26074-2010 Germanium monocrystal.Measurement of resistivity-DC linear four-point probe
- GB/T 41751-2022 Test method for radius of curvature of crystal plane in GaN single crystal substrate wafers
- GB/T 42676-2023 X-ray Diffraction Method for Testing the Quality of Semiconductor Single Crystal
- GB/T 15250-1994 Test method for bulk acoustic wave attenuation of piezoelectric lithium niobate crystals
- GB/T 30118-2013 Single crystal wafers for surface acoustic wave (SAW) device applications.Specifications and measuring methods
- GB/T 10067.410-2014 Basic specifications for electroheat installations.Part 410: Single crystal growing furnace
- GB/T 30839.46-2015 Energy consumption grading for industrial electroheat installations.Part 46:Crystal growing furnaces
- GB/T 42263-2022 Determination of nitrogen content in silicon single crystal—Secondary ion mass spectrometry method
- GB/T 30867-2014 Test method for measuring thickness and total thickness variation of monocrystalline silicon carbide wafers
- GB/T 31351-2014 Nondestructive test method for micropipe density of polished monocrystalline silicon carbide wafers
- GB/T 11297.7-1989 Test method for resistivity and Hall coefficient in InSb single crystals
- GB/T 22452-2008 General technical condition of non-linear optical borate crystal devices
- GB/T 22453-2008 Non-linear optical borate crystal devices measuring method
- GB/T 24574-2009 Test methods for photolumininescence analysis of single crystal silicon for Ⅲ-Ⅴ impurities
- GB 11297.7-1989 Test Method for InSb Single Crystal Resistivity and Hall Coefficient
- GB/T 30868-2014 Test method for measuring micropipe density of monocrystalline silicon carbide wafers.Chemically etching
- GB/T 42271-2022 Test method for resistivity of semi-insulating monocrystalline silicon carbide by contactless measurement
- GB/T 11297.6-1989 Standard method for showing and measuring dislocation etch pits in Indium Antimonide single crystal
- GB/T 13389-1992 Practice for conversion between resistivity and dopant density for boron-doped and phosphorus-doped silicon
- GB/T 32282-2015 Measurement of Dislocation Density in Gallium Nitride Single Crystal by Cathodoluminescence Microscopy
- GB/T 19199-2015 Test methods for carbon acceptor concentration in semi-insulating gallium arsenide single crystals by infrared absorption spectroscopy
- GB/T 19199-2003 Test method for carbon concentration of semi-insulating monocrystal gallium arsenide by measurement infrared absorption method
- GB/T 32188-2015 Test method for full width at half maximum of double crystal X-ray rocking curve of GaN single crystal substrate
- GB/T 13389-2014 Practice for conversion between resistivity and dopant density for boron-doped, phosphorus-doped, and arsenic-doped silicon
- GB/T 4326-1984 Extrinsic semiconductor single crystals--Measurement of Hall mobility and Hall coefficient
- GB/T 4326-2006 Extrinsic semiconductor single crystals measurement of Hall mobility and Hall coefficient
- GB 4326-1984 Extrinsic semiconductor single crystals-measurement of Hall mobility and Hall coefficient
- GB/T 32189-2015 Atomic Force Microscopy Examination of Surface Roughness of Gallium Nitride Single Crystal Substrate
- GB/T 17170-2015 Test method for the EL2 deep donor concentration in semi-insulating gallium arsenide single crystals by infrared absorption spectroscopy
- GB/T 35306-2023 Determination of Carbon and Oxygen Content in Silicon Single Crystal Low Temperature Fourier Transform Infrared Spectroscopy
- GB/T 13066-1991 Blank detail specification for unijunction transistors
- GB/T 9532-1988 Designations for LiNbO3,LiTaO3,Bi12GeO20,Bi12SiO20 piezoelectric crystals
Professional Standard - Machinery, single crystal
- JB/T 10439-2004 Crystal growing furnaces TDR-series crystal growing furnaces by Czochralski method
- JB/T 5633-1991 Single-crystal furnace. Grading of energy consumption
- JB/T 7996-1999 Common abrasive Single alundum
- JB/T 7996-2012 Conventional abrasive.Monocrystalline fused alumina
- JB/T 12068-2014 TDR-Z germanium mono-crystal growing furnace by Czochralski method
- JB/T 5203-1991 Monocrystalline fused alumina Method for chemical analysis
- JB/T 5203-2012 Chemical analysis methods for monocrystalline fused alumina
UNKNOWN, single crystal
Hebei Provincial Standard of the People's Republic of China, single crystal
- DB13/T 1314-2010 Solar grade monocrystalline silicon square rod, monocrystalline silicon wafer
- DB13/T 1828-2013 Solar grade monocrystalline silicon wafer
- DB13/T 5092-2019 General Technical Requirements for Square Seed Crystals for Solar-Grade Monocrystalline Silicon Ingots
- DB13/T 5631-2022 Technical specifications for the production of quartz crucibles for the growth of single crystal silicon for electronic materials
Group Standards of the People's Republic of China, single crystal
- T/ZSA 72-2019 Monocrystalline Silicon Carbide
- T/IAWBS 001-2021 Silicon carbide single crystal
- T/ZZB 1389-2019 Monocrystalline silicon photovoltaic cells
- T/ZZB 2675-2022 Monocrystalline silicon as lapped wafers for TVS
- T/ZZB 0044-2016 TDR-series crystal growing furnaces
- T/ZZB 1927-2020 Automatic mono-silicon cutting machine
- T/JSAS 015-2021 Monocrystalline silicon solar cells
- T/GZHG 006-2019 Large single crystal nickel cobalt lithium manganese oxide (NCM523)
- T/ZZB 0497-2018 Single crystal wafers for surface acoustic wave device applications
- T/CISA 167-2021 Master alloy of DD419 single crystal superalloy
- T/HEBQIA 073-2022 Superconducting magnets for Czochralski monocrystalline silicon
- T/CISA 086-2021 DD405 Single Crystal Superalloy Master Alloy
- T/SZBX 118-2023 Monocrystalline silicon wafers for solar cells
- T/CASME 465-2023 IPA-free Texturizer for Mono-silicon
- T/IAWBS 005-2018 6 inch polished monocrystalline silicon carbide wafers
- T/CEC 290-2019 Technical Requirements for Back Contact Single Crystal Wafer
- T/CEMIA 004-2018 Quartz crucibles for single crystal silicon growth in photovoltaic industry
- T/CEMIA 023-2021 Quartz crucible forsemiconductor monosilicon growth
- T/CECA 69-2022 Single-crystal thin film substrates for SAW devices
- T/ZZB 0648-2018 200 mm heavily phosphorus-doped single crystalline Czochralski silicon polished wafers
- T/NXCL 017-2022 300 mm heavily phosphorus-doped single crystaline Czochralski silicon polished wafers
- T/NXCL 016-2022 200 mm heavily antimony-doped single crystaline Czochralski silicon polished wafer
- T/CSTM 00033-2020 Terms of optical inorganic single crystals for nuclear radiation detection
- T/CEMIA 005-2018 Quartz crucible manufacturing practices for photovoltaic single crystal silicon growth
- T/ZZB 2283-2021 Ultra-high purity graphite powder for semiconductor silicon carbide crystal
- T/ICMTIA SM0027-2022 300mm p-type silicon single crystal polished wafer for advanced memory technology
- T/IAWBS 014-2021 Test method for dislocation density of silicon carbide polished wafers
- T/CEMIA 024-2021 Quartz crucible manufacturing practices for semiconductor monosilicon growth
- T/IAWBS 018-2022 Test method for dislocation density of diamond single crystal polished wafers
- T/STSI 7-2020 Photovoltaic modules used in construction—General technical requirements for U-shaped single crystal components
- T/IAWBS 013-2019 The measurement method of resistivity for semi-insulating silicon carbide substrate
- T/ZZB 2407-2021 Nickel cobalt manganese composite hydroxide applied in single crystal cathode material
- T/IAWBS 017-2022 Test method for full width at half maximum of double crystal X-rayrocking curve of diamond single crystal substrate
- T/IAWBS 015-2021 Test method for full width at half maximum of double crystal X-ray rocking curve of Ga2O3 single crystal substrate
- T/IAWBS 016-2022 X-ray double crystal rocking curve FWHM test method for silicon carbide single wafer
- T/CAB 0181-2022 The methods of measuring on characteristic parameters of both LYSO and LSO scintillators
- T/CNIA 0101-2021 Technical specification for green design product evaluation silicon carbide single crystal polished wafer
- T/IAWBS 011-2019 Test methods for measuring resistivity of conductive silicon carbide wafers with a noncontact eddy-current gauge
- T/ZJSEIA 004-2022 Ethylene-vinyl acetate copolymer (EVA) adhesive film for monocrystalline silicon photovoltaic modules
- T/CECA 83-2023 Lithium tantalate and lithium niobate reduced single crystal wafers— technical requirements and measurement methods for lightness and color difference
Professional Standard - Light Industry, single crystal
Professional Standard - Non-ferrous Metal, single crystal
- YS/T 554-2007 Lithium niobate single crystals
- YS/T 42-2010 Lithium tantalate single crystals
- YS/T 554-2006 Lithium niobate single crystal
- YS/T 1167-2016 Monocrystalline silicon etched wafers
- YS 783-2012 The norm of energy consumption per unit product of infrared germanium single crystal
- YS/T 978-2014 Carbon/carbon composites guide shield of single crystal furnace
- YS/T 977-2014 Carbon/carbon composites heat insulation cylinder of single crystal furnace
- YS/T 792-2012 Carbon-carbon composites crucible used in single crystal furnace
- YS/T 557-2006 Test method for acoustic wave attenuation of piezoelectric lithium niobate single crystal
- YS/T 1600-2023 Determination of trace impurity elements in silicon carbide single crystal —Glow discharge mass spectrometry
轻工业部, single crystal
Professional Standard - Electron, single crystal
- SJ/Z 2655-1986 Collection of single crystal Germaninm defects
- SJ 20607-1996 Specificatiion for molybdenate crystal
- SJ 20444-1994 Specification for Lithium Niobate singlecrystal
- SJ 3241-1989 Gallium arsenide single-crystal bar and wafer
- SJ 3243-1989 Indium phosphide single-crystal bar and wafers
- SJ/T 10173-1991 TDA75 single crystalline silicon solar cell
- SJ 20606-1996 Specification for tellurium dioxide single crystal
- SJ/T 11450-2013 Single Crystal Furnace Energy Consumption Specifications
- SJ/T 11854-2022 Czochralski monocrystalline silicon furnace for photovoltaic
- SJ/T 11502-2015 Specification for polished monocrystalline silicon carbide wafers
- SJ/T 11505-2015 Sapphire single crystal polished wafers specification
- SJ/T 11853-2022 Positive pressure suspended zone melting single crystal silicon furnace
- SJ/T 11500-2015 Test method for measuring crystallographic orientation of monocrystalline silicon carbide
- SJ/T 11501-2015 Test method for determining crystal type of monocrystalline silicon carbide
- SJ 2572-1985 Silicon monocrystalline rods and sheets for solar cells
- SJ/T 11864-2022 Semi-insulating silicon carbide single crystal substrate
- SJ 3245-1989 Methods for measuring dislocation of Indium phosphide single-crystal
- SJ 20641-1997 Specification for indium antimonide single crystals for used in infrared detector
- SJ 3244.3-1989 Methods of measurement for crystal-orientation of single crystal of Gallium arsenide and Indium phosphide
- SJ/T 11499-2015 Test method for measuring electrical properties of monocrystalline silicon carbide
- SJ 20640-1997 Specification for indium antimonide single crystal slices for use in infrared detector
- SJ 20750-1999 Specification for radiation hardened monocrystal silicon wafers for millitary CMOS integrated circuits
- SJ 20858-2002 Measuring methods for electrical parameters of silicon carbide single crystal material
- SJ 20605-1996 Specification for lithium tantalate single crystal used in SAW devices
- SJ/T 2428-1983 Clibration for astronautic standard monocrystal silicon solar cells
- SJ 2915-1988 Terms and definitions for single crystal microwave ferrite devices
- SJ/T 31108-1994 Requirements of readiness and methods of inspection and assessment for CG3000 mono-crystal furnaces
- SJ/T 31109-1994 Requirements of readiness and methods of inspection and assessment for high-pressure mono-crystal furnaces
- SJ/T 11504-2015 Test method for measuring surface quality of polished monocrystalline silicon carbide
- SJ 20844-2002 Test method for microzone homogeneity of semi-insulating monocrystal gallium arsenide
- SJ 20843-2002 Quantitative determination of AB microscopic defect density in gallium arsenide single crystal
- SJ/T 2429-1983 Test method for electrical characteristics of astronautic monocrystal silicon solar cells
- SJ/T 11503-2015 Test methods for measuring surface roughness of polished monocrystalline silicon carbide wafers
- SJ/T 11494-2015 Test methods for photoluminescence analysis of single crystal silicon for III-V impurities
- SJ/T 11207-1999 Measurement of magnetic properties of YIG single crystal magnetic-films
- SJ/T 10625-1995 Determination method for interstitial atomic oxygen content of germanium by infrared abaorption
- SJ/T 10333-1993 Methods of measurement for uni-junction transistors
- SJ 3249.2-1989 Methods of measurement for Carbon concentration of semi-insulation Gallicem arsenide single crystal by infra-red absorption
- SJ 3249.1-1989 Methods of measurement for resistivity of semi-insulation Gallium arsenide and Indium phosphide single crystal material
RU-GOST R, single crystal
- GOST 16153-1980 Monocrystalline germanium. Specifications
- GOST 24392-1980 Monocrystalline silicon and germanium. Measurement of the electrical resistivity by the four-probe method
- GOST R 57548-2017 Vacuum induction melting for obtaining products with single-crystal structure. Technical requirements
IN-BIS, single crystal
Military Standard of the People's Republic of China-General Armament Department, single crystal
- GJB 2917-1997 Indium Phosphide Single Wafer Specification
- GJB 3076A-2021 Gallium Phosphide Single Chip Specification
- GJB 3076-1997 Gallium Phosphide Single Chip Specification
- GJB 2917A-2018 Indium Phosphide Single Wafer Specification
- GJB 2917A-2004 Indium Phosphide Single Wafer Specification
- GJB 1926-1994 Gallium Arsenide Single Crystal Material Specification
- GJB 10343-2021 Specification for polished gallium antimonide single crystal wafers
- GJB 10342-2021 Specification for polished indium antimonide single crystal wafers
- GJB 1927-1994 Gallium arsenide single crystal material testing method
- GJB 1927A-2021 Gallium arsenide single crystal material testing method
- GJB 9804-2020 Specification for molybdenum-niobium alloy single crystal rods for nuclear use
- GJB 395-1987 Single crystal magnesium fluoride for air-to-air missile modulation plate
- GJB 1431-1992 General specifications for monocrystalline silicon solar cells for space use
- GJB 1431A-2014 General specification for single crystal silicon solar cell for space application
- GJB 581-1988 Single crystal calcium fluoride for infrared guidance "surface-to-air" missiles
- GJB 2918-1997 Specification for detector grade high resistance zone fused silicon monoliths
- GJB 1944A-2017 Specification for silicon monocrystals for space solar cells
- GJB 2452-1995 Specification for cadmium telluride single crystal wafers for infrared detectors
- GJB 757-1989 Synthetic mica large single chip for radar microwave devices
- GJB 2652-1996 Specification for single crystal cadmium zinc telluride materials for infrared detectors
- GJB 2652A-2004 Specification for single crystal cadmium zinc telluride materials for infrared detectors
- GJB 2918A-2017 Specification for polished wafers of molten silicon single crystal in detector grade high resistance zone
- GJB 8512-2015 Specification for polished germanium single crystal wafers for space solar cells
- GJB 1431/1-2000 Specifications for TDJ and TDB series monocrystalline silicon solar cells for space use
- GJB 1431/1A-2021 Specifications for TDJ and TDB series monocrystalline silicon solar cells for space use
- GJB 396-1987 Test method for single crystal magnesium fluoride for use in air-to-air missile modulating disks
- GJB 2834-1997 Specification for gallium arsenide single crystals and polished wafers for space solar cells
工业和信息化部, single crystal
- JC/T 2417-2017 Lithium tetraborate piezoelectric single crystal material
- YS/T 1182-2016 Germanium single crystal safety production specifications
- YB/T 4589-2017 Carbon/carbon composite materials for single crystal furnace insulation
- YB/T 4587-2017 Carbon/carbon composite heating element for single crystal furnace
- YB/T 4588-2017 Plate structure carbon/carbon composite materials for single crystal furnaces
- JC/T 2545-2019 Pyroelectric single crystal for high-performance infrared detectors
- JB/T 13942-2020 Synthesis of large single crystal diamond for industrial use by superabrasive static pressure method
- JC/T 2513-2019 Test method for anti-grey stain performance of potassium titanyl phosphate single crystal components
- JC/T 2512-2019 Technical requirements for high anti-fouling potassium titanyl phosphate single crystal components for all-solid-state lasers
中华人民共和国国家质量监督检验检疫总局、中国国家标准化管理委员会, single crystal
- GB/T 34210-2017 Test method for determining the orientation of sapphire single crystal
- GB/T 33763-2017 Test method for dislocation density of sapphire single crystal
- GB/T 35305-2017 Monocrystalline gallium arsenide polished wafers for solar cell
- GB/T 34481-2017 Test method for measuring etch pit density (EPD) in low dislocation density monocrystalline germanium slices
- GB/T 35306-2017 Test method for carbon and oxygen content of single crystal silicon—Low temperature fourier transform infrared spectrometry
National Metrological Verification Regulations of the People's Republic of China, single crystal
- JJG 48-2004 Standard Slice of Single Crystal Silicon Resistivity
- JJG 48-1990 Verification Regulation of Standard Slice of Single Crystal Silicon Resistivity
Professional Standard - Building Materials, single crystal
- JC/T 1048-2007 Fused quartz crucibles for single crystal silicon growth
- JC/T 1048-2018 Quartz crucible for single crystal silicon growth
- JC/T 2025-2010 Lead magnesium niobate titanate (PMNT) piezoelectric single crystals
- JC/T 2343-2015 Single crystal alumina tube prepared by edge-defined film-fed crystal growth
- JC/T 2139-2012 High purity paratellurite single crystal for nuclear physics
Professional Standard - Ferrous Metallurgy, single crystal
- YB 1603-1983 Silicon single crystal cutting and grinding discs
机械电子工业部, single crystal
- JB 5203-1991 Single crystal corundum chemical analysis method
Jiangxi Provincial Standard of the People's Republic of China, single crystal
- DB36/ 771-2013 Energy consumption quota per unit product of Czochralski monocrystalline silicon
Inner Mongolia Provincial Standard of the People's Republic of China, single crystal
- DB15/T 2234-2021 Energy consumption quota per unit product of Czochralski monocrystalline silicon
National Metrological Technical Specifications of the People's Republic of China, single crystal
- JJF 1256-2010 Calibration Specification for X-ray Monocrystal Orientation Equipment
- JJF 1760-2019 Calibration Specification for Standard Slices of Single Crystal Silicon Resistivity
Shaanxi Provincial Standard of the People's Republic of China, single crystal
- DB61/T 512-2011 Inspection rules for monocrystalline silicon wafers for solar cells
- DB61/T 511-2011 Inspection rules for monocrystalline silicon rods for solar cells
Shanghai Provincial Standard of the People's Republic of China, single crystal
- DB31/ 792-2014 Norm of energy consumption per unit products for monocrystalline silicon and silicon wafers
- DB31/T 792-2014 Energy consumption quota per unit product of silicon single crystal and its silicon wafer
- DB31/ 792-2020 Energy consumption quota per unit product of silicon single crystal and its silicon wafer
German Institute for Standardization, single crystal
- DIN 50431:1988 Testing of semiconductor materials; measurement of the resistivity of silicon or germanium single crystals by means of the four probe/direct current method with collinear array
- DIN EN IEC 62276:2023-05 Single crystal wafers for surface acoustic wave (SAW) device applications - Specifications and measuring methods (IEC 49/1401/CD:2022); Text in German and English / Note: Date of issue 2023-04-28*Intended as replacement for DIN EN 62276 (2017-08).
- DIN EN 62276:2017-08 Single crystal wafers for surface acoustic wave (SAW) device applications - Specifications and measuring methods (IEC 62276:2016); German version EN 62276:2016 / Note: DIN EN 62276 (2013-08) remains valid alongside this standard until 2019-11-28.
Korean Agency for Technology and Standards (KATS), single crystal
- KS D 2715-2006 Tensile specimen of single- and poly-crystal nano/micro thin film materials
- KS D 2715-2017 Tensile specimen of single- and poly-crystal nano/micro thin film materials
- KS D 0260-1999 TESTING METHODS OF RESISTIVITY FOR SINGLE CRYSTAL SILICON WAFERS WITH FOUR-POINT PROBE
- KS C IEC 62276:2007 Single crystal wafers for surface acoustic wave(SAW) device applications－Specifications and measuring methods
- KS D 0260-1989(1994) TESTING METHODS OF RESISTIVITY FOR SINGLE CRYSTAL SILICON WAFERS WITH FOUR-POINT PROBE
- KS D 0257-2002(2017) Measuring of minority - carrier lifetime in silicon single crystal by photoconductive decay method
- KS D 0257-2002(2022) Measuring of minority - carrier lifetime in silicon single crystal by photoconductive decay method
- KS C IEC 62276:2019 Single crystal wafers for surface acoustic wave(SAW) device applications — Specifications and measuring methods
- KS D 0257-2002 Measuring of minority - carrier lifetime in silicon single crystal by photoconductive decay method
Japanese Industrial Standards Committee (JISC), single crystal
- JIS H 0612:1975 Testing methods of resistivity for single crystal silicon wafers with four point probe
- JIS C 6760:2014 Single crystal wafers for surface acoustic wave (SAW) device applications .Specifications and measuring methods
- JIS H 0604:1995 Measuring of minority-carrier lifetime in silicon single crystal by photoconductive decay method
Sichuan Provincial Standard of the People's Republic of China, single crystal
- DB51/T 2499-2018 Naming and Qualification Judgment of Filling Treatment Single Crystal Gems
American National Standards Institute （ANSI), single crystal
- ANSI/ASTM D6058:2001 Practice for Determining Concentration of Airborne Single-Crystal Ceramic Whiskers in the Workplace Environment
- ANSI/ASTM D6057:2001 Test Method for Determining Concentration of Airborne Single-Crystal Ceramic Whiskers in the Workplace Environment by Phase Contrast Microscopy
Association Francaise de Normalisation, single crystal
- NF C93-616:2013 Single Crystal wafers for surface acoustic wave (SAW) device applications - Specifications and measuring methods
- NF C93-616:2006 Single crystal wafers for surface acoustic wave (SAW) device applications - Specifications and measuring methods.
- NF C93-616*NF EN 62276:2018 Single crystal wafers for surface acoustic wave (SAW) device applications - Specifications and measuring methods
Fujian Provincial Standard of the People's Republic of China, single crystal
- DB35/T 1118-2011 Anti-ashing Potassium Titanyl Phosphate Nonlinear Optical Single Crystal Components
International Electrotechnical Commission (IEC), single crystal
- IEC 62276:2005 Single crystal wafers for surface acoustic wave (SAW) device application - Specifications and measuring methods
- IEC 62276:2012 Single crystal wafers for surface acoustic wave (SAW) device applications - Specifications and measuring methods
- IEC PAS 62276:2001 Single crystal wafers applied for surface acoustic wave device - Specification and measuring method
- IEC 62276:2016 Single crystal wafers for surface acoustic wave (SAW) device applications - Specifications and measuring methods
Professional Standard - Aviation, single crystal
- HB 6742-1993 Determination of Crystal Orientation of Single Crystal Blades by X-ray Backblow Laue Photography
- HB 7762-2005 Specification for master alloys of directionally solidified and single crystal superalloys for aeroengines
British Standards Institution (BSI), single crystal
- BS EN 62276:2013 Single crystal wafers for surface acoustic wave (SAW) device applications. Specifications and measuring methods
- BS EN 62276:2005 Single crystal wafers for surface acoustic wave (SAW) device applications - Specifications and measuring methods
- BS EN 62276:2006 Single crystal wafers applied for surface acoustic wave (SAW) device applications - Specification and measuring methods
- BS EN 62276:2016 Single crystal wafers for surface acoustic wave (SAW) device applications. Specifications and measuring methods
- 23/30468947 DC BS EN 62276. Single crystal wafers for surface acoustic wave (SAW) device applications. Specifications and measuring methods
PL-PKN, single crystal
- PN M59102-1973 Marking products Bonded abrasive tolls and mono- crystalline Classif ication and designation
IEEE - The Institute of Electrical and Electronics Engineers@ Inc., single crystal
- IEEE 1859-2017 Relaxor-Based Single Crystals for Transducer and Actuator Applications
IEC - International Electrotechnical Commission, single crystal
- PAS 62276-2001 Single Crystal Wafers Applied for Surface Acoustic Wave Device - Specification and Measuring Method (Edition 1.0)
CZ-CSN, single crystal
- CSN 34 5941-1984 Gallium arsenide and gallium phospide monocrystalline. Determination of resistivity and Hall coefficient
Professional Standard - Geology, single crystal
- DZ/T 0294-2016 Screening and identification of colorless single crystal diamonds synthesized by chemical vapor deposition
Danish Standards Foundation, single crystal
- DS/EN 62276:2013 Single crystal wafers for surface acoustic wave (SAW) device applications - Specifications and measuring methods
CENELEC - European Committee for Electrotechnical Standardization, single crystal
- EN 62276:2013 Single crystal wafers for surface acoustic wave (SAW) device applications - Specifications and measuring methods
European Committee for Electrotechnical Standardization（CENELEC）, single crystal
- EN 62276:2016 Single crystal wafers for surface acoustic wave (SAW) device applications - Specifications and measuring methods
ES-UNE, single crystal
- UNE-EN 62276:2016 Single crystal wafers for surface acoustic wave (SAW) device applications - Specifications and measuring methods (Endorsed by Asociación Española de Normalización in January of 2017.)
American Society for Testing and Materials (ASTM), single crystal
- ASTM F847-94(1999) Standard Test Methods for Measuring Crystallographic Orientation of Flats on Single Crystal Silicon Wafers by X-Ray Techniques
- ASTM D6058-96(2011) Standard Practice for Determining Concentration of Airborne Single-Crystal Ceramic Whiskers in the Workplace Environment
- ASTM D6058-96(2016) Standard Practice for Determining Concentration of Airborne Single-Crystal Ceramic Whiskers in the Workplace Environment
- ASTM D6058-96(2006) Standard Practice for Determining Concentration of Airborne Single-Crystal Ceramic Whiskers in the Workplace Environment
- ASTM D6058-96(2001) Standard Practice for Determining Concentration of Airborne Single-Crystal Ceramic Whiskers in the Workplace Environment
- ASTM D6058-96 Standard Practice for Determining Concentration of Airborne Single-Crystal Ceramic Whiskers in the Workplace Environment
廊坊市市场监督管理局, single crystal
- DB1310/T 227-2020 Technical specification for quartz crucible process for growth of single crystal silicon, a special electronic material
Lithuanian Standards Office , single crystal
- LST EN 62276-2006 Single crystal wafers for surface acoustic wave (SAW) device appplications. Specifications and measuring methods (IEC 62276:2005)
- LST EN 62276-2013 Single crystal wafers for surface acoustic wave (SAW) device applications - Specifications and measuring methods (IEC 62276:2012)
KR-KS, single crystal
- KS C IEC 62276-2019 Single crystal wafers for surface acoustic wave(SAW) device applications — Specifications and measuring methods
Institute of Electrical and Electronics Engineers (IEEE), single crystal
GOSTR, single crystal
- PNST 406-2020 ？Green？ standards. Photovoltaic monocrystal modules. Criteria and indicators for confirm compliance with ？green？ products