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field effect transistor

field effect transistor, Total:410 items.

In the international standard classification, field effect transistor involves: Semiconductor devices, Mechanical structures for electronic equipment, Semiconducting materials, Valves, Electrical and electronic testing, Electronic components in general, Electricity. Magnetism. Electrical and magnetic measurements, Analytical chemistry, Paints and varnishes, Integrated circuits. Microelectronics, Environmental testing.

(U.S.) Joint Electron Device Engineering Council Soild State Technology Association, field effect transistor

JEDEC JES2-1992 Transistor, Gallium Arsenide Power Fet, Generic Specification
JEDEC JESD73-4-2001 7Standard for Description of 3867: 2.5 V, Dual 5-Bit, 2-Port, DDR FET Switch

Korean Agency for Technology and Standards (KATS), field effect transistor

KS C 5202-1980(2000) RELIABILITY ASSURED FIELD-EFFECT TRANSISTORS
KS C 5202-2004 RELIABILITY ASSURED FIELD-EFFECT TRANSISTORS
KS C IEC 60747-8:2002 Discrete devices－Part 8：Field－effect transistors
KS C IEC 60747-8:2020 Semiconductor devices — Discrete devices —Part 8: Field-effect transistors
KS C IEC 60747-4-1-2002(2017) Semiconductor devices－Discrete devices－Part 4－1：Microwave diodes and transistors－Microwave field effect transistors－Blank detail specification

YU-JUS, field effect transistor

JUS N.R1.353-1979 Letter symbohfor semiconductor devices. Bipolar andfield-effect transistors.
JUS N.R1.323-1979 Termsand definitions for semiconductor devices. Bipolar and field-effect transistors.
JUS N.R1.451-1982 Field-effect transistor. General principles of measuring methods
JUS N.R1.330-1979 ipolar transistors. Definitions of scattering parameters
JUS N.R1.373-1980 Semiconductor ?iodes. Essentialratings and characteristics. Low-power signaldiodes
JUS N.R1.390-1979 Bipolar tnmmton. Etsential ratings and chancteristics: bw-power signal transistors
JUS N.R1.391-1979 Bvpolar transistors. Essential ratings and characteristics: power transistors
JUS N.R1.392-1980 Field-effect transistors. Essential ratings and characteristics

Japanese Industrial Standards Committee (JISC), field effect transistor

JIS C 7214:1978 Reliability assured field-effect transistors

IET - Institution of Engineering and Technology, field effect transistor

MICROW FLD-EFFE TRANSIS-1994 Microwave Field-Effect Transistors: Theory@ design and applications
RF MICROW MDL MEAS TECHNQ FLD EFFT TRANSIS-2010 RF and Microwave Modeling and Measurement Techniques for Field Effect Transistors

International Electrotechnical Commission (IEC), field effect transistor

IEC 60747-8:2000 Semiconductor devices - Part 8: Field-effect transistors
IEC 60747-8-1:1987 Semiconductor devices - Discret devices. Part 8: Field-effect transistors. Blank detail specification for single-gate field-effect transistors, up to 5 W and 1 GHz.
IEC 60747-8-3:1995 Semiconductor devices - Discrete devices - Part 8: Field-effect transistors - Section 3: Blank detail specification for case-rated field-effect transistors for switching applications
IEC 60747-8-2:1993 Semicoductor devices; discrete devices; part 8: field-effect transistors; section 2: blank detail specification for field-effect transistors for case-rated power amplifier applications
IEC 60747-8:2010/AMD1:2021 Semiconductor devices - Discrete devices - Part 8: Field-effect transistors
IEC 60747-8:2010 Semiconductor devices - Discrete devices - Part 8: Field-effect transistors
IEC 60747-8:1984 Semiconductor devices. Discrete devices. Part 8 : Field-effect transistors
IEC 60747-8:2021 Semiconductor devices - Discrete devices - Part 8: Field-effect transistors
IEC 60747-8:2010+AMD1:2021 CSV Semiconductor devices - Discrete devices - Part 8: Field-effect transistors
IEC 60747-4-1:2000 Semiconductor devices - Discrete devices - Part 4-1: Microwave diodes and transistors; Microwave field effect transistors; Blank detail specification
IEC 60747-8-4:2004 Discrete semiconductor devices - Part 8-4: Metal-oxide-semiconductor field-effect transistors (MOSFETs) for power switching applications
IEC TS 62607-6-16:2022 Nanomanufacturing - Key control characteristics - Part 6-16: Two-dimensional materials - Carrier concentration: Field effect transistor method
IEC 62373-1:2020 Semiconductor devices - Bias-temperature stability test for metal-oxide, semiconductor, field-effect transistors (MOSFET) - Part 1: Fast BTI test for MOSFET
IEC 62417:2010 Semiconductor devices - Mobile ion tests for metal-oxide semiconductor field effect transistors (MOSFETs)
IEC 63275-1:2022 Semiconductor devices - Reliability test method for silicon carbide discrete metal-oxide semiconductor field effect transistors - Part 1: Test method for bias temperature instability
IEC 62373:2006 Bias-temperature stability test for metal-oxide, semiconductor, field-effect transistors (MOSFET)
IEC 63275-2:2022 Semiconductor devices - Reliability test method for silicon carbide discrete metal-oxide semiconductor field effect transistors - Part 2: Test method for bipolar degradation due to body diode operatio

British Standards Institution (BSI), field effect transistor

BS IEC 60747-8:2010 Semiconductor devices. Discrete devices. Field-effect transistors
BS IEC 60747-8:2010+A1:2021 Semiconductor devices. Discrete devices - Field-effect transistors
BS IEC 60747-8:2001 Discrete semiconductor devices and integrated circuits - Field-effect transistors - Additional ratings and characteristics and amds in the measuring methods for power switching field effect transistors
BS QC 750114:1996 Harmonized system of quality assessment for electronic components. Semiconductor devices. Discrete devices. Field-effect transistors. Blank detail specification for case-rated field-effect transistors for switching applications
BS EN 62373:2006 Bias-temperature stability test for metal-oxide, semiconductor, field-effect transistors (MOSFET)
BS EN 62417:2010 Semiconductor devices - Mobile ion tests for metal-oxide semiconductor field effect transistors (MOSFETs)
19/30389766 DC BS IEC 60747-8 AMD1. Semiconductor devices. Discrete devices. Part 8. Field-effect transistors
BS IEC 60747-8-4:2004 Discrete semiconductor devices - Metal-oxide semiconductor field-effect transistors (MOSFETs) for power switching applications
BS IEC 62373-1:2020 Semiconductor devices. Bias-temperature stability test for metal-oxide, semiconductor, field-effect transistors (MOSFET) - Fast BTI test for MOSFET
BS QC 750106:1993 Specification for harmonized system of quality assessment for electronic components. Semiconductor discrete devices. Blank detail specification. Field-effect transistors for case-rated power amplifier applications
BS IEC 63275-1:2022 Semiconductor devices. Reliability test method for silicon carbide discrete metal-oxide semiconductor field effect transistors - Test method for bias temperature instability
17/30366375 DC BS IEC 62373-1. Semiconductor devices. Bias-temperature stability test for metal-oxide semiconductor field-effect transistors (MOSFET). Part 1. Fast BTI Test method
18/30381548 DC BS EN 62373-1. Semiconductor devices. Bias-temperature stability test for metal-oxide semiconductor field-effect transistors (MOSFET). Part 1. Fast BTI Test method

CZ-CSN, field effect transistor

CSN 35 8803-1983 Field effect transistors. Electric Parameter. Measurement Methods
CSN 35 8797 Cast.8 IEC 747-8 ZA1+A2:1996 Semiconductor devices. Discrete devices. Part 8: Field-effect transistore

European Standard for Electrical and Electronic Components, field effect transistor

EN 150012:1991 Blank detail specification: single gate field-effect transistors

PL-PKN, field effect transistor

PN T01505 ArkusZ06-1974 Field-eftec? transis?ors Measuring method Ga?? current Icdo
PN T01505 ArkusZ11-1974 Field-effect ?ransis?ors Measuring method Drain-source breakdown yol?age U
PN T01501 ArkusZ4-1973 Semiconductor deyictj Letter symbols of field-effect transistors porameters
PN T01505 ArkusZ01-1974 Field-effec? transistors Measuring me?hod Gate-source cut-o?f yol?aoe Ugs (Offi
PN T01505 ArkusZ10-1974 Field-effecl transistors Measuring method Ga?e-source breakdown voltage U(8R) GSS
PN T01505 ArkusZ09-1974 Field-effect transittors Measuring method Drain-source breakdown voltage U(BR) DSS
PN T01505 ArkusZ12-1974 Field-e??ecl transis?ors Measuring method Shorf-circui? inpof conducfance common source 9uss
PN T01505-19-1987 Field-effect transistors Measuring method Noise factor F and equivalent input noise yoltage U?
PN T01505 ArkusZ14-1974 Field-effec? transistort Measuring method Short-circuit reyerse transfer conductance common source g,,?
PN T01505-17-1987 Field-effect transistors Measuring method Short-circuit utput capacitance in common source C22SS
PN T01505 ArkusZ02-1974 Field-effect transistors Measuring me?hod Ga?e-source ?hreshold yoltage Ugs (TO)
PN T01505-16-1987 Field-effect transistors Measuring method Short-circuit input capacitance in common source CnM
PN T01505-18-1987 Field-effect transistors Measuring method Common souree reverse transfer capacitance with input short-circuited Cl2j.s
PN T01505-04-1987 Field-effect transistors Measuring method Gate cut-off current Iaso and gate leakage current Igss
PN T01505-15-1987 Field-effect transistors Measuring method Short-circuit forward transter admittance yi\s and short-circuit forward transconductance in common source gms
PN T01505-13-1987 Field-effect transistors Measuring method Short-circuit output admittance y?is and short-circuit output conductance in comrnon source goss
PN T01505-03-1987 Field-effect transistors Measuring method Drain current, at a specified gate-source voltage Idsx and drain current, with gate short-circuited to source. Idss

RU-GOST R, field effect transistor

GOST 17466-1980 Transistors bipolar and field-effect. Basic parameters
GOST 20398.2-1974 Field-effect transistors. Noise figure measurement technique
GOST 20398.3-1974 Field-effect transistors. Forward transconductance measurement technique
GOST 20398.6-1974 Field-effect transistors. Gate leakage current measurement technique
GOST 20398.11-1980 Field-effect transistors. Short-circuit equivalent input noise voltage measurement technique
GOST 20398.0-1983 Field-effect transistors. General requirements for measuring electrical parameters
GOST 20398.8-1974 Field-effect transistors. Drain current for V(Gs)=0 measurement technique
GOST 20398.13-1980 Field-effect transistors. Drain source resistance measurement technique
GOST 20398.12-1980 Field-effect transistors. Drain residual current measurement technique
GOST 20398.1-1974 Field-effect transistors. Shot-circuit forward transfer admittance measurement technique
GOST 20398.4-1974 Field-effect transistors. Active output conductance component measurement technique
GOST 20398.7-1974 Field-effect transistors. Threshold and cut-off voltage measurement technique
GOST 20398.9-1980 Field-effect transistors. Forward fransconductance inpulse measurement technique
GOST 20398.10-1980 Field-effect transistors. Drain current for Vgs=0 impulse measurement technique
GOST 20398.5-1974 Field-effect transistors. Input transfer and output capacitance measurement technique
GOST 20398.14-1988 Field-effect transistors. Method of measuring output power, power gain and drain efficiency

General Administration of Quality Supervision, Inspection and Quarantine of the People‘s Republic of China, field effect transistor

GB/T 15450-1995 Blank detail specification for silicon dual-qute field-effect transistors
GB/T 6219-1998 Semiconductor devices--Discrete devices. Part 8: Field-effect transistors. Section One--Blank detail specification for single-gate field-effect transistors up to 5W and 1GHz
GB/T 4586-1994 Semiconductor devices. Discrete devices. Part 8: Field-effect transistors
GB/T 15449-1995 Biank detail-specification for field-dffect transistors for case-rated swatching application
GB/T 21039.1-2007 Semiconductor devices Discrete devices Part 4-1: Microwave diodes and transistors-Microwave field effect transistors Blank detail specification

Professional Standard - Aerospace, field effect transistor

QJ 2617-1994 Acceptance specification for microwave field effect transistor (microwave FET) package

TH-TISI, field effect transistor

TIS 2124-2002 Semiconductor devices.discrete devices.part 8: field.effect transistors section three: blank detail specification for case.rated field.effect transistors for switching applications
TIS 2122-2002 Semiconductor devices.discrete devices.part 8: field.effect transistors section one: blank detail specification for single.gate field.effect transistors, up to 5 w and 1 ghz
TIS 2121-2002 Semiconductor devices.discrete devices.part 8: field.effect transistors
TIS 2123-2002 Semiconductor devices.discrete devices.part 8: field.effect transistors section two: blank detail specification for field.effect transistors for case.rated power amplifier applications

European Committee for Electrotechnical Standardization（CENELEC）, field effect transistor

EN 62417:2010 Semiconductor devices - Mobile ion tests for metal-oxide semiconductor field effect transistors (MOSFETs)
EN 62373:2006 Bias-temperature stability test for metal-oxide, semiconductor, field-effect transistors (MOSFET)

RO-ASRO, field effect transistor

STAS SR CEI 747-8-1993 Semiconductor devices Discrete devices Part 8: Field effect transistors
STAS 12389-1985 FIELD-EFFECT TRANSISTORS Limiting values and basic electrical parameters nomenclature
STAS 12124/3-1983 Semiconductor devices FIFL D-EFFECT TRANZISTORS Methods for measuring electrical static parameters
STAS 12124/4-1983 Semiconductor devices FIELD-EFECT TRANZISTORS Methods for measuring electrical static parameters
STAS 7128/8-1986 LETTER SYMBOLS FOR SEMICONDUCTOR DEVICES AND INTEGRATED CIRCUITS Symbols for field effect transitors

KR-KS, field effect transistor

KS C IEC 60747-8-2020 Semiconductor devices — Discrete devices —Part 8: Field-effect transistors

Military Standard of the People's Republic of China-General Armament Department, field effect transistor

GJB/Z 41.4-1993 Military semiconductor discrete device series spectrum field effect transistor
GJB 33/24-2021 Detailed Specification for CS0406-10 Silicon Field Effect Microwave Pulse Power Transistor
GJB 33/25-2021 Detailed Specification for CS0406-350 Silicon Field Effect Microwave Pulse Power Transistor
GJB 33/003-1989 Blank detailed specification for single-gate field effect transistors under 5W and below 1GHz for semiconductor discrete devices

Defense Logistics Agency, field effect transistor

DLA SMD-5962-89659-1990 MICROCIRCUIT, LINEAR, FET BUFFER, HYBRID
DLA MIL-PRF-19500/295 E VALID NOTICE 1-2008 Semiconductor Device, Field-Effect Transistors, P-Channel, Silicon, Type 2N2608, JAN and UB
DLA MIL-PRF-19500/296 E VALID NOTICE 1-2008 Semiconductor Device, Field-Effect Transistors, P-Channel, Silicon, Type 2N2609, JAN and UB
DLA MIL-PRF-19500/296 F-2012 SEMICONDUCTOR DEVICE, FIELD-EFFECT TRANSISTORS, P-CHANNEL, SILICON, TYPE 2N2609, JAN AND UB
DLA MIL-PRF-19500/295 F-2012 SEMICONDUCTOR DEVICE, FIELD-EFFECT TRANSISTORS, P-CHANNEL, SILICON, TYPE 2N2608, JAN AND UB
DLA MIL-PRF-19500/750-2008 SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, N-CHANNEL, SILICON, TYPE 2N7507U3, JANTX, JANTXV, AND JANS
DLA MIL-PRF-19500/750 VALID NOTICE 1-2013 Semiconductor Device, Field Effect Transistor, N-Channel, Silicon, Type 2N7507U3, JANTX, JANTXV, and JANS
DLA MIL-PRF-19500/748-2008 SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, P-CHANNEL, SILICON, TYPE 2N7505T3, JANTX, JANTXV AND JANS
DLA MIL-PRF-19500/751-2008 SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, P-CHANNEL, SILICON, TYPE 2N7508U3, JANTX, JANTXV, AND JANS
DLA MIL-PRF-19500/748 VALID NOTICE 1-2013 Semiconductor Device, Field Effect Transistor, P-Channel, Silicon, Type 2N7505T3, JANTX, JANTXV and JANS
DLA MIL-PRF-19500/751 VALID NOTICE 1-2013 Semiconductor Device, Field Effect Transistor, P-Channel, Silicon, Type 2N7508U3, JANTX, JANTXV, and JANS
DLA SMD-5962-01504 REV B-2007 MICROCIRCUIT, HYBRID, CUSTOM, FIELD EFFECT TRANSISTOR, 500 VOLT, WITH GATE PROTECTION
DLA SMD-5962-01504 REV D-2011 MICROCIRCUIT, HYBRID, CUSTOM, FIELD EFFECT TRANSISTOR, 500 VOLT, WITH GATE PROTECTION
DLA MIL-M-38510/114 B VALID NOTICE 1-2008 MICROCIRCUITS, LINEAR, BI-FET OPERATIONAL AMPLIFIERS, MONOLITHIC SILICON
DLA SMD-5962-01503 REV A-2005 MICROCIRCUIT, HYBRID, CUSTOM, FIELD EFFECT TRANSISTORS, 600 VOLT OR 500 VOLT, WITH GATE PROTECTION
DLA MIL-PRF-19500/696 A-2009 SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, PLASTIC, N-CHANNEL, SILICON, TYPE 2N7537, 2N7537A, JAN AND JANTX
DLA MIL-PRF-19500/696 A VALID NOTICE 1-2013 Semiconductor Device, Field Effect Transistor, Plastic, N-Channel, Silicon, Type 2N7537, 2N7537A, JAN and JANTX
DLA SMD-5962-81023 REV L-2006 MICROCIRCUIT, LINEAR, BI-FET OPERATIONAL AMPLIFIERS, MONOLITHIC SILICON
DLA MIL-S-19500/378 B VALID NOTICE 2-2004 SEMICONDUCTOR DEVICE, FIELD-EFFECT TRANSISTOR, P-CHANNEL, SILICON, TYPES 2N2497 THROUGH 2N2500, 2N3329 THROUGH 2N3332, JANTX
DLA MIL-PRF-19500/378 B NOTICE 1-1999 SEMICONDUCTOR DEVICE, FIELD-EFFECT TRANSISTOR, P-CHANNEL, SILICON, TYPES 2N2497 THROUGH 2N2500, 2N3329 THROUGH 2N3332, JANTX
DLA MIL-PRF-19500/569 NOTICE 2-1999 SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTORS, N-CHANNEL, SILICON TYPES 2N6966, 2N6967, 2N6968, AND 2N6969 JANTX, JANTXV, AND JANS
DLA MIL-PRF-19500/428 G VALID NOTICE 1-2011 SEMICONDUCTOR DEVICE, FIELD-EFFECT TRANSISTOR, N-CHANNEL SILICON, TYPE 2N4416A AND 2N4416AUB, JAN, JANTX, JANTXV, AND JANS
DLA MIL-PRF-19500/547 D-2011 SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, N-CHANNEL, SILICON, TYPES 2N6660 AND 2N6661, JAN, JANTX, JANTXV, AND JANS
DLA MIL-PRF-19500/428 H-2011 SEMICONDUCTOR DEVICE, FIELD-EFFECT TRANSISTOR, N-CHANNEL SILICON, TYPE 2N4416A AND 2N4416AUB, JAN, JANTX, JANTXV, AND JANS
DLA SMD-5962-90500 REV B-2002 MICROCIRCUIT, HYBRID, LINEAR, HIGH SPEED, FET INPUT, OPERATIONAL AMPLIFIER
DLA SMD-5962-01503 REV C-2013 MICROCIRCUIT, HYBRID, CUSTOM, FIELD EFFECT TRANSISTORS, 600 VOLT OR 500 VOLT, WITH GATE PROTECTION
DLA SMD-5962-88503 REV J-2003 MICROCIRCUIT, LINEAR, DUAL MOSFET DRIVERS, MONOLITHIC SILICON
DLA MIL-PRF-19500/430 B VALID NOTICE 2-2008 Semiconductor Device, Dual Field Effect Transistors, N-Channel, Silicon Types 2N5545, 2N5546, and 2N5547, JAN, JANTX, and JANTXV
DLA MIL-PRF-19500/430 C-2011 SEMICONDUCTOR DEVICE, DUAL FIELD EFFECT TRANSISTORS, N-CHANNEL, SILICON TYPES 2N5545, 2N5546, AND 2N5547, JAN, JANTX, AND JANTXV
DLA MIL-PRF-19500/562 D VALID NOTICE 1-2008 Semiconductor Device, Field Effect Transistor, P-Channel, Silicon, Types 2N6804 and 2N6806 JAN, JANTX, JANTXV, JANS, JANHC, and JANKC
DLA MIL-PRF-19500/562 E-2010 SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, P-CHANNEL, SILICON, TYPES 2N6804 AND 2N6806 JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
DLA MIL-PRF-19500/688 B-2012 SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, N-CHANNEL, SILICON, TYPES 2N7002, 2N7002T2, AND 2N7002UB, JAN, JANTX, JANTXV, AND JANS
DLA MIL-PRF-19500/562 E (1)-2013 SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, P-CHANNEL, SILICON, TYPES 2N6804 AND 2N6806 JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
DLA MIL-PRF-19500/633 D-2013 SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED TRANSISTORS, P-CHANNEL SILICON, TYPES 2N7403 AND 2N7404, JANSD AND JANSR
DLA MIL-PRF-19500/634 C-2008 SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTORS, N-CHANNEL SILICON, TYPES 2N7405, 2N7406, 2N7407, AND 2N7408, JANSD AND JANSR
DLA MIL-PRF-19500/705 B-2008 SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR, N-CHANNEL, SILICON TYPES 2N7488T3, 2N7489T3, AND 2N7490T3, JANTXVR AND JANSR
DLA MIL-PRF-19500/685 D (1)-2009 SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED TRANSISTOR, N-CHANNEL, SILICON, TYPES 2N7475T1, 2N7476T1, AND 2N7477T1 (TOTAL DOSE AND SINGLE EVENT EFFECTS), JANTXVR AND JANSR
DLA MIL-PRF-19500/685 E-2010 SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED TRANSISTOR, N-CHANNEL, SILICON, TYPES 2N7475T1, 2N7476T1, AND 2N7477T1 (TOTAL DOSE AND SINGLE EVENT EFFECTS), JANTXVR AND JANSR
DLA MIL-PRF-19500/685 F-2013 SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED TRANSISTOR, N-CHANNEL, SILICON, TYPES 2N7475T1, 2N7476T1, AND 2N7477T1 (TOTAL DOSE AND SINGLE EVENT EFFECTS), JANTXVR AND JANSR
DLA SMD-5962-89622 REV A-1994 MICROCIRCUIT, LINEAR, HIGH-SPEED, JFET, OPERATIONAL AMPLIFIER, MONOLITHIC SILICON
DLA SMD-5962-91574 REV C-2005 MICROCIRCUIT, HYBRID, LINEAR, DIFFERENTIAL OPERATIONAL AMPLIFIER, FET INPUT
DLA MIL-PRF-19500/704 B-2008 SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR, N-CHANNEL, SILICON, TYPES 2N7485U3, 2N7486U3, AND 2N7487U3, JANTXVR AND JANSR
DLA MIL-PRF-19500/684 D (1)-2009 SEMICONDUCTOR DEVICE, TRANSISTOR, FIELD EFFECT, SILICON, N-CHANNEL, RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS), TYPES 2N7472U2, 2N7473U2, AND 2N7474U2, JANTXVR AND JANSR
DLA MIL-PRF-19500/633 C-2008 SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTORS, P-CHANNEL SILICON, TYPES 2N7403 AND 2N7404, JANSD AND JANSR
DLA MIL-PRF-19500/658 VALID NOTICE 2-2011 Semiconductor Device, Field Effect Radiation Hardened (Total Dose and Single Event Effects) Transistor, P-Channel Silicon Type 2N7438, and 2N7439 JANSD and JANSR
DLA MIL-PRF-19500/706 A VALID NOTICE 1-2010 Semiconductor Device, Field Effect Radiation Hardened (Total Dose and Single Event Effects) Transistor, N-Channel, Silicon Types 2N7497T2, 2N7498T2, and 2N7499T2, JANTXVR and JANSR
DLA SMD-5962-87660 REV A-2001 MICROCIRCUITS, LINEAR, MOSFET DRIVER, DUAL POWER
DLA MIL-PRF-19500/652 B-2008 SEMICONDUCTOR DEVICE, TRANSISTOR, HIGH VOLTAGE, FIELD EFFECT, N-CHANNEL, SILICON, TYPE 2N7387 AND 2N7387U1, JAN, JANTX, JANTXV, AND JANS
DLA MIL-PRF-19500/599 D VALID NOTICE 1-2008 Semiconductor Device, Quad, Field Effect Transistors, P-Channel, Silicon Type 2N7335 JAN, JANTX, JANTXV, JANS, JANHC, and JANKC
DLA MIL-PRF-19500/741 A VALID NOTICE 1-2013 Semiconductor Device, Field Effect, Radiation Hardened (Total Dose and Single Event Effects) Transistor Die, N-Channel and PChannel, Silicon, Various Types, JANHC and JANKC
DLA MIL-PRF-19500/605 C-2008 SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE ONLY) TRANSISTORS, N-CHANNEL, SILICON, TYPES 2N7292, 2N7294, 2N7296, AND 2N7298, JANTXVM, D, R, H AND JANSM, D AND R
DLA MIL-PRF-19500/704 B (1)-2010 SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR, N-CHANNEL, SILICON, TYPES 2N7485U3, 2N7486U3, AND 2N7487U3, JANTXVR AND JANSR
DLA MIL-PRF-19500/752-2010 SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, N-CHANNEL, RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS), LOGIC-LEVEL SILICON, TYPE 2N7608T2, JANTXVR, JANTXVF, JANSR, AND JANSF
DLA MIL-PRF-19500/704 C-2010 SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR, N-CHANNEL, SILICON, TYPES 2N7485U3, 2N7486U3, AND 2N7487U3, JANTXVR AND JANSR
DLA MIL-PRF-19500/705 C-2011 SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR, N-CHANNEL, SILICON TYPES 2N7488T3, 2N7489T3, AND 2N7490T3, JANTXVR AND JANSR
DLA MIL-PRF-19500/749-2008 SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, P-CHANNEL RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS), SILICON, TYPES 2N7506U8 AND 2N7506U8C, JANTXVR, JANTXVF, JANSR AND JANSF
DLA SMD-5962-00521 REV E-2008 MICROCIRCUIT, DIGITAL-LINEAR, RADIATION HARDENED, COMPLEMENTARY SWITCH FET DRIVER, MONOLITHIC SILICON
DLA SMD-5962-88770 REV H-2003 MICROCIRCUIT, LINEAR, SINGLE POWER MOSFET DRIVER, MONOLITHIC SILICON
DLA MIL-PRF-19500/570 D-2009 SEMICONDUCTOR DEVICE, TRANSISTOR, FIELD EFFECT, N-CHANNEL, SILICON LOGIC-LEVEL, TYPES 2N6901 AND 2N6903, JAN, JANTX, JANTXV, AND JANS
DLA MIL-PRF-19500/542 H-2010 SEMICONDUCTOR DEVICE, TRANSISTOR, FIELD EFFECT, N-CHANNEL, SILICON, TYPES 2N6756, 2N6758, 2N6760, 2N6762, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
DLA MIL-PRF-19500/566 B VALID NOTICE 2-2011 Semiconductor Device, Transistor, Field Effect, N-Channel, Silicon, Logic-Level, Types 2N6902 and 2N6904 JAN, JANTX, JANTXV, and JANS
DLA MIL-PRF-19500/542 J-2011 SEMICONDUCTOR DEVICE, TRANSISTOR, FIELD EFFECT, N-CHANNEL, SILICON, TYPES 2N6756, 2N6758, 2N6760, 2N6762, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
DLA MIL-PRF-19500/542 J (1)-2013 SEMICONDUCTOR DEVICE, TRANSISTOR, FIELD EFFECT, N-CHANNEL, SILICON, TYPES 2N6756, 2N6758, 2N6760, 2N6762, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
DLA MIL-PRF-19500/652 C-2013 SEMICONDUCTOR DEVICE, TRANSISTOR, HIGH VOLTAGE, FIELD EFFECT, N-CHANNEL, SILICON, TYPE 2N7387 AND 2N7387U1, JAN, JANTX, JANTXV, AND JANS
DLA MIL-PRF-19500/431 E-2011 SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTORS, N-CHANNEL, SILICON, TYPES 2N4091, 2N4092, 2N4093, 2N4091UB, 2N4092UB, AND 2N4093UB, JAN, JANTX, AND JANTXV
DLA MIL-PRF-19500/714-2009 SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, ENCAPSULATED PLASTIC, N-CHANNEL, SILICON, TYPE 2N7558, 2N7559 2N7560, JAN, JANTX, AND JANTXV
DLA MIL-PRF-19500/715-2009 SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, ENCAPSULATED PLASTIC, N-CHANNEL, SILICON, TYPE 2N7563, 2N764, 2N7565, JAN, JANTX, AND JANTXV
DLA MIL-PRF-19500/476 E-2012 SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTORS, P-CHANNEL, SILICON, TYPES 2N5114 THROUGH 2N5116 AND 2N5114UB THROUGH 2N5116UB, JAN, JANTX, AND JANTXV
DLA MIL-PRF-19500/675 E-2013 SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED TRANSISTORS, N-CHANNEL, SILICON TYPES 2N7463T2, 2N7464T2, 2N7463U5 AND 2N7464U5 JANTXVR AND JANSR
DLA MIL-PRF-19500/714 VALID NOTICE 1-2013 SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, ENCAPSULATED PLASTIC, N-CHANNEL, SILICON, TYPE 2N7558, 2N7559 2N7560, JAN, JANTX, AND JANTXV
DLA MIL-PRF-19500/715 VALID NOTICE 1-2013 Semiconductor Device, Field Effect Transistor, Encapsulated Plastic, N-Channel, Silicon, Type 2N7563, 2N764, 2N7565, JAN, JANTX, and JANTXV
DLA MIL-PRF-19500/634 D-2013 SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED TRANSISTORS, N-CHANNEL SILICON, TYPES 2N7405, 2N7406, 2N7407, AND 2N7408, JANSD AND JANSR
DLA MIL-PRF-19500/476 F-2013 SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTORS, P-CHANNEL, SILICON, TYPES 2N5114 THROUGH 2N5116 AND 2N5114UB THROUGH 2N5116UB, JAN, JANTX, AND JANTXV
DLA SMD-5962-89976 REV B-2006 MICROCIRCUIT, LINEAR, HIGH SPEED, PRECISION, JFET, OPERATIONAL AMPLIFIER, MONOLITHIC SILICON
DLA SMD-5962-90633 REV A-2006 MICROCIRCUIT, LINEAR, QUAD BIFET, OPERATIONAL AMPLIFIER, MONOLITHIC SILICON
DLA SMD-5962-90807 REV D-2002 MICROCIRCUIT, LINEAR, JFET, MICROPOWER, OPERATIONAL AMPLIFIER, MONOLITHIC SILICON
DLA SMD-5962-90817 REV C-2007 MICROCIRCUIT, LINEAR, OPERATIONAL AMPLIFIER, DUAL, JFET, HIGH SPEED, MONOLITHIC SILICON
DLA SMD-5962-90902 REV A-2002 MICROCIRCUIT, HYBRID, LINEAR, FET INPUT, CLOSED LOOP BUFFER AMPLIFIER
DLA MIL-PRF-19500/563 F VALID NOTICE 1-2008 Semiconductor Device, Field Effect Transistor, P-Channel, Silicon Types 2N6845, 2N6845U, 2N6847, and 2N6847U JAN, JANTX, JANTXV, JANS, JANHC and JANKC
DLA MIL-PRF-19500/657 B-2011 SEMICONDUCTOR DEVICE, FIELD EFFECT, RADIATION HARDENED, TRANSISTOR DIE, N AND P-CHANNEL, SILICON VARIOUS TYPES JANHC AND JANKC
DLA MIL-PRF-19500/660 D-2013 SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED TRANSISTOR, P-CHANNEL SILICON, TYPES 2N7424, 2N7425, AND 2N7426, JANTXVR, JANTXVF, JANSR, AND JANSF
DLA MIL-PRF-19500/660 E-2013 SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED TRANSISTOR, P-CHANNEL SILICON, TYPES 2N7424, 2N7425, AND 2N7426, JANTXVR, JANTXVF, JANSR, AND JANSF
DLA MIL-PRF-19500/687 C-2013 SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED TRANSISTOR, N-CHANNEL SILICON, TYPES 2N7509, 2N7510, AND 2N7511, JANTXVD, R AND JANSD, R
DLA MIL-PRF-19500/683 C-2008 SEMICONDUCTOR DEVICE, TRANSISTOR, FIELD EFFECT, N-CHANNEL, RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TYPE 2N7467U2, JANTXVR, F, G, AND H AND JANSR, F, G, AND H
DLA MIL-PRF-19500/747-2008 SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, N-CHANNEL, RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS), SILICON, TYPE 2N7504T2, JANTXVR, JANTXVF, JANTXVG, JANTXVH, JANSF, JANSG, JANSR, AND JANSH
DLA MIL-PRF-19500/744-2008 SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, N-CHANNEL, RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS), LOGIC-LEVEL SILICON, TYPES 2N7616UB, 2N7616UBC, JANTXVR, JANTXVF, JANSR, AND JANSF
DLA MIL-PRF-19500/687 B-2008 SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR, N-CHANNEL SILICON, TYPES 2N7509, 2N7510, AND 2N7511, JANTXVD, R AND JANSD, R
DLA MIL-PRF-19500/689 VALID NOTICE 2-2011 Semiconductor Device, Field Effect Radiation Hardened (Total Dose and Single Event Effects) Transistor, N-Channel Silicon Types 2N7512, 2N7513, and 2N7514 JANTXVD, R and JANSD, R
DLA MIL-PRF-19500/687 B VALID NOTICE 1-2013 Semiconductor Device, Field Effect Radiation Hardened (Total Dose and Single Event Effects) Transistor, N-Channel Silicon, Types 2N7509, 2N7510, and 2N7511, JANTXVD, R and JANSD, R
DLA MIL-PRF-19500/745-2008 SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, P-CHANNEL, RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS), LOGIC-LEVEL SILICON, TYPES 2N7626UB, 2N7626UBC, JANTXVR, JANTXVF, JANSR, AND JANSF
DLA MIL-PRF-19500/745 A-2009 SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, P-CHANNEL, RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS), LOGIC-LEVEL SILICON, TYPES 2N7626UB, 2N7626UBC, JANTXVR, JANTXVF, JANSR, AND JANSF
DLA MIL-PRF-19500/683 C (1)-2009 SEMICONDUCTOR DEVICE, TRANSISTOR, FIELD EFFECT, N-CHANNEL, RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TYPE 2N7467U2, JANTXVR, F, G, AND H AND JANSR, F, G, AND H
DLA MIL-PRF-19500/753-2008 SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR, N-CHANNEL, SILICON, TYPES 2N7580T1, 2N7582T1, 2N7584T1, AND 2N7586T1, JANTXVR, JANTXVF, JANSR, AND JANSF
DLA MIL-PRF-19500/755-2010 SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR, N-CHANNEL, SILICON, TYPES 2N7588T3, 2N7590T3, 2N7592T3 AND 2N7594T3, JANTXVR, JANTXVF, JANSR AND JANSF
DLA MIL-PRF-19500/733 B-2010 SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTORS, P-CHANNEL, SILICON, TYPES 2N7523T1, 2N7523U2, 2N7524T1, AND 2N7524U2, JANTXVR, F AND JANSR, F
DLA MIL-PRF-19500/713 B-2010 SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTORS, P-CHANNEL, SILICON, TYPES 2N7549T1, 2N7549U2, 2N7550T1, AND 2N7550U2, JANTXVR, F AND JANSR, F
DLA MIL-PRF-19500/753 B-2013 SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR, N-CHANNEL, SILICON, TYPES 2N7580T1, 2N7582T1, 2N7584T1, AND 2N7586T1, JANTXVR, JANTXVF, JANSR, AND JANSF
DLA MIL-PRF-19500/741 A-2009 SEMICONDUCTOR DEVICE, FIELD EFFECT, RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR DIE, N-CHANNEL AND P-CHANNEL, SILICON, VARIOUS TYPES, JANHC AND JANKC
DLA MIL-PRF-19500/757 A-2011 SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, P-CHANNEL, RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS), LOGIC-LEVEL SILICON, TYPES 2N7624U3 AND 2N7625T3, JANTXVR, JANTXVF, JANSR, AND JANSF
DLA MIL-PRF-19500/570 E-2010 SEMICONDUCTOR DEVICE, TRANSISTOR, FIELD EFFECT, N-CHANNEL, SILICON LOGIC-LEVEL, TYPES 2N6901 AND 2N6903, JAN, JANTX, JANTXV, JANS, JANHC,AND JANKC
DLA MIL-PRF-19500/676 E-2013 SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED TRANSISTORS, N-CHANNEL, SILICON, TYPES 2N7465T3 AND 2N7466T3 AND U3 SUFFIXES, JANTXVR AND JANSR
DLA SMD-5962-89669 REV A-2001 MICROCIRCUIT, LINEAR, QUAD, SPST JFET, ANALOG SWITCH, MONOLITHIC SILICON
DLA SMD-5962-87706 REV A-2000 MICROCIRCUIT, LINEAR, PRECISION JFET-INPUT, OPERATIONAL AMPLIFIER, MONOLITHIC SILICON
DLA SMD-5962-90808 REV C-2002 MICROCIRCUIT, LINEAR, JFET, MICROPOWER, DUAL, OPERATIONAL AMPLIFIER, MONOLITHIC SILICON
DLA MIL-PRF-19500/556 K-2010 SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, N-CHANNEL, SILICON, TYPES 2N6782, 2N6782U, 2N6784, 2N6784U, 2N6786, AND 2N6786U, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
DLA SMD-5962-91519 REV C-2007 MICROCIRCUIT, LINEAR, DUAL PRECISION JFET, HIGH SPEED OPERATIONAL AMPLIFIER, MONOLITHIC SILICON
DLA SMD-5962-87716 REV A-2000 MICROCIRCUIT, LINEAR, 8-CHANNEL, JFET ANALOG MULTIPLEXER, MONOLITHIC SILICON
DLA SMD-5962-87717 REV B-2002 MICROCIRCUIT, LINEAR, 16-CHANNEL JFET ANALOG MULTIPLEXER, MONOLITHIC SILICON
DLA SMD-5962-89897 REV B-2002 MICROCIRCUIT, LINEAR, QUAD, PRECISION, HIGH SPEED, JFET OPERATIONAL AMPLIFIER, MONOLITHIC SILICON
DLA SMD-5962-90809 REV E-2006 MICROCIRCUIT, LINEAR, JFET, MICROPOWER, QUAD, OPERATIONAL AMPLIFIER, MONOLITHIC SILICON
DLA MIL-PRF-19500/732 A-2008 SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTORS, P-CHANNEL, SILICON, TYPES 2N7519U3, 2N7519U3C, 2N7519T3, 2N7520U3, 2N7520U3C, AND 2N7520T3, JANTXVR, F AND JANSR, F
DLA MIL-PRF-19500/743-2008 SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR, N-CHANNEL, SILICON, TYPES 2N7503U8 AND 2N7503U8C, JANTXVR, F AND G AND JANSR, F AND G
DLA MIL-PRF-19500/746-2008 SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR, N-CHANNEL, SILICON, TYPES 2N7587U3, 2N7587U3C, 2N7589U3, 2N7589U3C, 2N7591U3, 2N7591U3C, 2N7593U3, AND 2N7593U3C, JANTXVR, JANTXVF, JANSR, AND JANSF
DLA MIL-PRF-19500/697 C (1)-2009 SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR, N-CHANNEL, SILICON, TYPE 2N7478T1, JANTXVR, F, G, AND H AND JANSR, F, G, AND H
DLA MIL-PRF-19500/758-2010 SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR, N-CHANNEL, SILICON, TYPES 2N7609U8 AND 2N7609U8C, JANTXVR, F AND G AND JANSR, F AND G
DLA MIL-PRF-19500/697 D-2011 SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR, N-CHANNEL, SILICON, TYPE 2N7478T1, JANTXVR, F, G, AND H AND JANSR, F, G, AND H
DLA MIL-PRF-19500/746 B-2011 SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR, N-CHANNEL, SILICON, TYPES 2N7587U3, 2N7587U3C, 2N7589U3, 2N7589U3C, 2N7591U3, 2N7591U3C, 2N7593U3, AND 2N7593U3C, JANTXVR, JANTXVF, JANSR, AND JANSF
DLA MIL-PRF-19500/655 E-2012 SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR, P-CHANNEL SILICON, TYPES 2N7424U, 2N7425U, AND 2N7426U, JANTXVR AND F AND JANSR AND F
DLA MIL-PRF-19500/697 E-2013 SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR, N-CHANNEL, SILICON, TYPE 2N7478T1, JANTXVR, F, G, AND H AND JANSR, F, G, AND H
DLA SMD-5962-03247 REV B-2005 MICROCIRCUIT, HYBRID, LINEAR, POWER MOSFET, DUAL CHANNEL, OPTOCOUPLER
DLA SMD-5962-96897 REV C-2005 MICROCIRCUIT, LINEAR, OPERATIONAL AMPLIFIER, SINGLE, HIGH VOLTAGE, MOSFET, MONOLITHIC SILICON
DLA MIL-PRF-19500/375 H-2011 SEMICONDUCTOR DEVICE, TRANSISTOR, FIELD-EFFECT, N-CHANNEL, DEPLETION MODE, SILICON, TYPES 2N3821, 2N3821UB, 2N3822, 2N3822UB, 2N3823, AND 2N3823UB, JAN, JANTX, JANTXV, AND JANS
DLA MIL-PRF-19500/375 J-2011 SEMICONDUCTOR DEVICE, TRANSISTOR, FIELD-EFFECT, N-CHANNEL, DEPLETION MODE, SILICON, TYPES 2N3821, 2N3821UB, 2N3822, 2N3822UB, 2N3823, AND 2N3823UB, JAN, JANTX, JANTXV, AND JANS
DLA MIL-PRF-19500/595 K-2013 SEMICONDUCTOR DEVICE, REPETITIVE AVALANCHE, FIELD EFFECT, TRANSISTOR, P-CHANNEL, SILICON, TYPES 2N7236, 2N7237, 2N7236U, AND 2N7237U, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
DLA MIL-PRF-19500/557 G VALID NOTICE 1-2008 Semiconductor Device, Field Effect Transistor, N-Channel, Silicon Types 2N6796, 2N6796U, 2N6798, 2N6798U, 2N6800, 2N6800U, 2N6802, and 2N6802U JAN, JANTX, JANTXV, JANS, JANHC, and JANKC
DLA MIL-PRF-19500/557 H-2010 SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, N-CHANNEL, SILICON TYPES 2N6796, 2N6796U, 2N6798, 2N6798U, 2N6800, 2N6800U, 2N6802, AND 2N6802U JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
DLA MIL-PRF-19500/557 J-2010 SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, N-CHANNEL, SILICON TYPES 2N6796, 2N6796U, 2N6798, 2N6798U, 2N6800, 2N6800U, 2N6802, AND 2N6802U JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
DLA MIL-PRF-19500/557 K-2012 SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, N-CHANNEL, SILICON TYPES 2N6796, 2N6796U, 2N6798, 2N6798U, 2N6800, 2N6800U, 2N6802, AND 2N6802U JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
DLA MIL-PRF-19500/739 A-2013 SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED QUAD TRANSISTOR, N-CHANNEL AND P-CHANNEL, SILICON, TYPES 2N7518 AND 2N7518U, JANTXVR, F, AND JANSR, F
DLA MIL-PRF-19500/739-2006 SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) QUAD TRANSISTOR, N-CHANNEL AND P-CHANNEL, SILICON, TYPES 2N7518 AND 2N7518U, JANTXVR, F, AND JANSR, F
DLA MIL-PRF-19500/743 A-2008 SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR, N-CHANNEL, SILICON, TYPES 2N7503U8 AND 2N7503U8C, JANTXVR, F, G AND H AND JANSR, F, G AND H
DLA MIL-PRF-19500/673 A (1)-2009 SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR, N-CHANNEL, SILICON TYPES 2N7468U2 AND 2N7469U2 JANTXVR, F, G AND H AND JANSR, F, G AND H
DLA MIL-PRF-19500/698 D-2010 SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR, N-CHANNEL, SILICON TYPES 2N7470T1 AND 2N7471T1, JANTXVR, F, G, AND H AND JANSR, F, G, AND H
DLA MIL-PRF-19500/759 REV A-2012 SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) DUAL TRANSISTOR, N-CHANNEL AND P-CHANNEL, LOGIC-LEVEL SILICON TYPES 2N7632UD, JANTXVR, F, AND JANSR, F
DLA MIL-PRF-19500/698 E-2013 SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR, N-CHANNEL, SILICON TYPES 2N7470T1 AND 2N7471T1, JANTXVR, F, G, AND H AND JANSR, F, G, AND H
DLA MIL-PRF-19500/700 A VALID NOTICE 1-2010 Semiconductor Device, Field Effect Radiation Hardened (Total Dose and Single Event Effects) Transistor, N-Channel, Silicon, Types 2N7494U5, 2N7495U5, and 2N7496U5, JANTXVR, F, G, and H, and JANSR, F, G, and H
DLA SMD-5962-87718 REV A-2000 MICROCIRCUIT, LINEAR, 4-CHANNEL DIFFERENTIAL JFET ANALOG MULTIPLEXER, MONOLITHIC SILICON
DLA MIL-PRF-19500/662 E-2013 SEMICONDUCTOR DEVICE, TRANSISTOR, FIELD EFFECT RADIATION HARDENED P-CHANNEL, SILICON, TYPES 2N7422, 2N7422U, 2N7423, AND 2N7423U, JANTXVR AND F AND JANSR AND F
DLA MIL-PRF-19500/662 F-2013 SEMICONDUCTOR DEVICE, TRANSISTOR, FIELD EFFECT RADIATION HARDENED P-CHANNEL, SILICON, TYPES 2N7422, 2N7422U, 2N7423, AND 2N7423U, JANTXVR AND F AND JANSR AND F
DLA MIL-PRF-19500/555 K-2010 SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, N-CHANNEL, SILICON, TYPES 2N6788, 2N6788U, 2N6790, 2N6790U, 2N6792, 2N6792U, 2N6794, AND 2N6794U, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
DLA MIL-PRF-19500/701 A (1)-2009 SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR, N-CHANNEL, SILICON, TYPES 2N7491T2, 2N7492T2, AND 2N7493T2, JANTXVR, F, G, AND H AND JANSR, F, G, AND H
DLA MIL-PRF-19500/702 B (1)-2010 SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR, N-CHANNEL, SILICON, TYPES 2N7482T3, 2N7483T3, AND 2N7484T3, JANTXVR, F, G, AND H AND JANSR, F, G, AND H
DLA MIL-PRF-19500/702 C-2010 SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR, N-CHANNEL, SILICON, TYPES 2N7482T3, 2N7483T3, AND 2N7484T3, JANTXVR, F, G, AND H AND JANSR, F, G, AND H
DLA MIL-PRF-19500/703 B-2010 SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR, N-CHANNEL, SILICON, TYPES 2N7479U3, 2N7480U3, AND 2N7481U3, JANTXVR, F, G, AND H AND JANSR, F, G, AND H
DLA MIL-PRF-19500/701 B-2011 SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR, N-CHANNEL, SILICON, TYPES 2N7491T2, 2N7492T2, AND 2N7493T2, JANTXVR, F, G, AND H AND JANSR, F, G, AND H
DLA MIL-PRF-19500/700 B-2011 SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR, N-CHANNEL, SILICON, TYPES 2N7494U5, 2N7495U5, AND 2N7496U5, JANTXVR, F, G, AND H, AND JANSR, F, G, AND H
DLA MIL-PRF-19500/630 F-2012 SEMICONDUCTOR DEVICE, FIELD EFFECT, RADIATION HARDENED TRANSISTOR, P-CHANNEL, SILICON, TYPES 2N7389, 2N7390, 2N7389U, 2N7389U5, AND 2N7390U, 2N7390U5, JANTXV, R, AND F AND JANS, R, AND F
DLA MIL-PRF-19500/663 E-2013 SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED TRANSISTORS, N-CHANNEL, SILICON, TYPES 2N7431, 2N7432, AND 2N7433, JANTXVR, F, G, AND H; AND JANSR, F, G, AND H
DLA MIL-PRF-19500/664 D-2012 SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED TRANSISTORS, N-CHANNEL, SILICON, TYPES 2N7431U, 2N7432U, AND 2N7433U, JANTXVR, F, G, AND H; AND JANSR, F, G, AND H
DLA MIL-PRF-19500/663 F-2013 SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED TRANSISTORS, N-CHANNEL, SILICON, TYPES 2N7431, 2N7432, AND 2N7433, JANTXVR, F, G, AND H; AND JANSR, F, G, AND H
DLA MIL-PRF-19500/597 D VALID NOTICE 1-2008 Semiconductor Device, Transistors, Quad, Field Effect, NChannel, Silicon, Type 2N7334, JAN, JANTX, JANTXV, JANS, JANHC, JANKCA2N7334, and JANHCA2N7334
DLA MIL-PRF-19500/615 F-2013 SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED TRANSISTORS, P-CHANNEL, SILICON, TYPES 2N7382 AND 2N7383, JANTXV M, D, R, AND F AND JANS M, D, R, AND F
DLA MIL-PRF-19500/740 (1)-2012 SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) QUAD TRANSISTOR, N-CHANNEL AND P-CHANNEL, SILICON TYPES 2N7521U, 2N7522U, 2N7525, AND 2N7526, JANTXVR AND F AND JANSR AND F
DLA SMD-5962-90861 REV A-1996 MICROCIRCUIT, LINEAR, J-FET LOW POWER, SINGLE/DUAL/QUAD OPERATIONAL AMPLIFIER, MONOLITHIC SILICON
DLA MIL-PRF-19500/592 E VALID NOTICE 1-2009 Semiconductor Device, Repetitive Avalanche, Field Effect Transistor, N-Channel, Silicon Types 2N7224, 2N7225, 2N7227, 2N7228, 2N7224U, 2N7225U, 2N7227U, and 2N7228U, JAN, JANTX, JANTXV, JANS, JANHC, and JANKC
DLA MIL-PRF-19500/744 A-2010 SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, N-CHANNEL, RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS), LOGIC-LEVEL SILICON, TYPES 2N7616UB, 2N7616UBC, 2N7616UBN, 2N7616UBCN, JANTXVR, JANTXVF, JANSR, AND JANSF
DLA MIL-PRF-19500/614 G-2012 SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTORS, N-CHANNEL, SILICON, TYPES 2N7380 AND 2N7381, JANTXV, M, D, R, F, G, AND H AND JANS, M, D, R, F, G, AND H
DLA MIL-PRF-19500/744 C-2012 SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, N-CHANNEL, RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS), LOGIC-LEVEL SILICON, TYPES 2N7616UB, 2N7616UBC, 2N7616UBN, 2N7616UBCN, JANTXVR, JANTXVF, JANSR, AND JANSF
DLA MIL-PRF-19500/745 B-2010 SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, P-CHANNEL, RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS), LOGIC-LEVEL SILICON, TYPES 2N7626UB, 2N7626UBC, 2N7626UBN, 2N7626UBCN, JANTXVR, JANTXVF, JANSR, AND JANSF
DLA MIL-PRF-19500/745 C-2011 SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, P-CHANNEL, RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS), LOGIC-LEVEL SILICON, TYPES 2N7626UB, 2N7626UBC, 2N7626UBN, 2N7626UBCN, JANTXVR, JANTXVF, JANSR, AND JANSF
DLA MIL-PRF-19500/745 D-2012 SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, P-CHANNEL, RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS), LOGIC-LEVEL SILICON, TYPES 2N7626UB, 2N7626UBC, 2N7626UBN, 2N7626UBCN, JANTXVR, JANTXVF, JANSR, AND JANSF
DLA SMD-5962-90958 REV B-2003 MICROCIRCUIT, LINEAR, JFET-INPUT, HIGH OUTPUT-DRIVE, LOW POWER, OPERATIONAL AMPLIFIER, MONOLITHIC SILICON
DLA MIL-PRF-19500/592 F-2010 SEMICONDUCTOR DEVICE, REPETITIVE AVALANCHE, FIELD EFFECT TRANSISTOR, N-CHANNEL, SILICON, TYPES 2N7224, 2N7225, 2N7227, 2N7228, 2N7224U, 2N7225U, 2N7227U, AND 2N7228U, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
DLA MIL-PRF-19500/543 K-2008 SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTORS, N-CHANNEL, SILICON REPETITIVE AVALANCHE, TYPES 2N6764, 2N6764T1, 2N6766, 2N6766T1, 2N6768, 2N6768T1, 2N6770, AND 2N6770T1, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
DLA MIL-PRF-19500/543 M-2011 SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTORS, N-CHANNEL, SILICON REPETITIVE AVALANCHE, TYPES 2N6764, 2N6764T1, 2N6766, 2N6766T1, 2N6768, 2N6768T1, 2N6770, AND 2N6770T1, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
DLA MIL-PRF-19500/543 N-2013 SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTORS, N-CHANNEL, SILICON REPETITIVE AVALANCHE, TYPES 2N6764, 2N6764T1, 2N6766, 2N6766T1, 2N6768, 2N6768T1, 2N6770, AND 2N6770T1, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
DLA MIL-PRF-19500/606 B-2004 SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE ONLY) TRANSISTORS, N-CHANNEL, SILICON, TYPES 2N7291, 2N7293, 2N7295, AND 2N7297, JANTXVM, D, AND R, AND JANSM, D, AND R
DLA MIL-PRF-19500/662 C-2008 SEMICONDUCTOR DEVICE, TRANSISTOR, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE ONLY), P-CHANNEL, SILICON, TYPES 2N7422, 2N7422U, 2N7423, AND 2N7423U, JANTXVR AND F AND JANSR AND F
DLA MIL-PRF-19500/605 D-2013 SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE ONLY) TRANSISTORS, N-CHANNEL, SILICON, TYPES 2N7292, 2N7294, 2N7296, AND 2N7298, JANTXVM, D, R, H AND JANSM, D AND R
DLA MIL-PRF-19500/614 H-2013 SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED TRANSISTORS, N-CHANNEL, SILICON, TYPES 2N7380 AND 2N7381, JANTXV, M, D, R, F, G, AND H AND JANS, M, D, R, F, G, AND H
DLA MIL-PRF-19500/603 H-2011 SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE ONLY) TRANSISTORS, N-CHANNEL, SILICON, TYPES 2N7268, 2N7269, 2N7270, 2N7394, 2N7268U, 2N7269U, 2N7270U, AND 2N7394U, JANTXVR, F, G, H; JANSR, F, G, AND H
DLA MIL-PRF-19500/603 J-2013 SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE ONLY) TRANSISTORS, N-CHANNEL, SILICON, TYPES 2N7268, 2N7269, 2N7270, 2N7394, 2N7268U, 2N7269U, 2N7270U, AND 2N7394U, JANTXVR, F, G, H; JANSR, F, G, AND H

IN-BIS, field effect transistor

Professional Standard - Electron, field effect transistor

SJ 20231-1993 Verification regulation of KDK double gate FET Yfs tester
SJ 20184-1992 Semiconductor discrete device--Detail specification for field-effect transistor of Types CS3821,3822,3823
SJ 20789-2000 Rapid screening test methods for Thermal sensitive parameter of MOS field effect transistor
SJ 2748-1987 Blank detail specification for single-gate low noise microwave FETs
SJ 20232-1993 Verification regulation of KDK double gate FET Gp tester
SJ 50033/42-1994 Semiconductor discrete device.Detail specification for type CSO467 GaAs microwave FET
SJ 50033/78-1995 Semiconductor discrete devices.Detail specification for type CS0464 GaAs microwave FET
SJ/T 11824-2022 Metal Oxide Semiconductor Field Effect Transistor (MOSFET) Equivalent Capacitance and Voltage Change Rate Test Method
SJ 1974-1981 Detail specification for low frequency field-effect transistors,Type CS1
SJ 1975-1981 Detail specification for low frequency field-effect transistors,Type CS2
SJ 1976-1981 Detail specification for low frequency field-effect transistors,Type CS3
SJ 1977-1981 Detail specification for high frequency field-effect transistors,Type CS4
SJ 1978-1981 Detail specification for high frequency field-effect transistors,Type CS5
SJ 1979-1981 Detail specification for high frequency field-effect transistors,Type CS6
SJ 1980-1981 Detail specification for high frequency field-effect transistors,Type CS7
SJ 1981-1981 Detail specification for high frequency field-effect transistors,Type CS8
SJ 1982-1981 Detail specification for high frequency field-effect transistors,Type CS9
SJ 50033/79-1995 Semiconductor discrete devices.Detail specification for type CS0536 GaAs microwave power FET
SJ 50033/120-1997 Semiconductor discrete devices Detail specification for type CS205 GaAs microwave power field effect transistor
SJ 20061-1992 Semiconductor discrete device.Detail specification for silicon N-channel deplition mode field-effect transistor of type CS146
SJ 50033.51-1994 Semiconductor discrete devices.Detail specification for type CS0558 GaAs microwave dual gate FET
SJ 50033.52-1994 semiconductor discrete device.Detail specification for type CS0529 GaAs microwave Power field effect transistor
SJ 50033.54-1994 Semiconductor discrete device.Detail specification for type CS0532 GaAs microwave power field effect transistor
SJ 50033/119-1997 Semiconductor discrete devices Detail specification for type CS204 GaAs microwave power field effect transistor
SJ 50033/81-1995 Semiconductor discrete devices.Detail specification for type CS0524 GaAs microwave power FET
SJ 50033/121-1997 Semiconductor discrete devices.Detail specification for type CS3458～CS3460 silicon N-channel junction mode field-effect transistors
SJ 50033/80-1995 Semiconductor discrete devices.Detail specification for type CS0513 GaAs microwave power FET
SJ 50033/122-1997 Semiconductor discrete devices.Detail specification for type CS3684～CS3687 silicon N-channel junction mode field-effect transistors
SJ 50033/38-1994 Semiconductor discrete device.Detail specification for types CS4856～CS4861 silicon N-channel deplition mode field-effect transistor
SJ 50033.53-1994 Semiconductor discrete device.Detail specification for type CS0530 and CS0531 GaAs microwave Power field effect transistor
SJ 50033/84-1995 Semiconductor discrete device.Detail specification for type CS140 Silicon N-channel MOS deplition mode field-effect transistor
SJ 50033/86-1995 Semiconductor discrete device.Detail specification for type CS5114～CS5116 silicon P-channel deplition mode field-effect transistor
SJ 50033/83-1995 Semiconductor discrete device.Detail specification for type CS139 silicon P-channel MOS enhancement mode field-effect transistor
SJ 50033/87-1995 Semiconductor discrete device.Detail specification for type CS4091～CS4093 silicon N-channel deplition mode field-effect transistor
SJ 50033/85-1995 Semiconductor discrete device.Detail specification for type CS141 silicon N-channel MOS deplition mode field-effect transistor
SJ 50033/106-1996 semiconductor discrete device.Detail specification for type CS203 GaAs microwave Low noise field effect transistor
SJ 1990-1981 Detail specification for N channel junction pair field-effect transistors,Type CS20
SJ 1991-1981 Detail specification for N channel junction pair field-effect transistors,Type CS21
SJ 1992-1981 Detail specification for N channel junction pair field-effect transistors,Type CS22
SJ 1989-1981 Detail specification for Nchannel junction pair field-effect transistors,Type CS19
SJ 50033/89-1995 Semiconductor discrete device.Detail specification for type CS 6768 and CS 6770 silicon N channel enhancement mode field effect transistor
SJ 50033/88-1995 Semiconductor discrete device.Detail specification for type CS6760 and CS6762 silicon N-channel enhacement mode field-effect transistor
SJ 1986-1981 Detail specification for low frequency low noise field-effect transistors,Type CS13
SJ 1988-1981 Detail specification for low frequency low noise field-effect transistors,Type CS15
SJ 1984-1981 Detail specification for low frequency low noise field-effect transistors,Type CS11
SJ 1987-1981 Detail specification for low frequency low noise field-effect transistors,Type CS14
SJ 1983-1981 Detail specification for low frequency low noise field-effect transistors,Type CS10
SJ 1985-1981 Detail specification for low frequency low noise field-effect transistors,Type CS12
SJ 20011-1992 Semiconductor discrete device.Detail specification for silicon N-channel deplition mode field-effect transistor of type CS1 GP, GT and GCT classes
SJ 20012-1992 Semiconductor discrete device.Detail specification for silicon N-channel deplition mode field-effect transistor of type CS4. GP, GT and GCT classes
SJ 20013-1992 Semiconductor discrete device.Detail specification for silicon N-channel deplition mode field-effect transistor of type CS10. GP, GT and GCT classes
SJ/T 11059-1996 Detailed specifications for electronic components - CS4220A single-gate N-channel junction type field-effect transistors (Applicable for certification)
SJ 1994-1981 Detail specification for N channel junction pair field-effect transistors,Type CS24
SJ 2002-1981 Detail specification for N channel junction pair field-effect transistors,Type CS32
SJ 2003-1981 Detail specification for N channel junction pair field-effect transistors,Type CS33
SJ 2001-1981 Detail specification for N channel junction pair field-effect transistors,Type CS31
SJ 1995-1981 Detail specification for N channel junction pair field-effect transistors,Type CS25
SJ 1997-1981 Detail specification for N channel junction pair field-effect transistors,Type CS27
SJ 1998-1981 Detail specification for N channel junction pair field-effect transistors,Type CS28
SJ 2000-1981 Detail specification for N channel junction pair field-effect transistors,Type CS30
SJ 2004-1981 Detail specification for N channel junction pair field-effect transistors,Type CS34
SJ 1993-1981 Detail specification for N channel junction pair field-effect transistors,Type CS23
SJ 1996-1981 Detail specification for N channel junction pair field-effect transistors,Type CS26
SJ 1999-1981 Detail specification for N channel junction pair field-effect transistors,Type CS29
SJ/T 11057-1996 Detailed specifications for electronic components - 4CS142 high frequency silicon dual insulated-gate field-effect transistors (Applicable for certification)
SJ/T 11055-1996 Detailed specifications for electronic components - 4CS119 high frequency silicon dual insulated-gate field-effect transistors (Applicable for certification)
SJ/T 11056-1996 Detailed specifications for electronic components - 4CS1191 high frequency silicon dual insulated-gate field-effect transistors (Applicable for certification)
SJ/T 10956-1996 Detailed specifications for electronic components - 4CS122 high frequency silicon dual insulated-gate field-effect transistors (Applicable for certification)
SJ/T 10957-1996 Detailed specifications for electronic components - 4CS103 high frequency silicon dual insulated-gate field-effect transistors (Applicable for certification)
SJ/T 11058-1996 Detailed specifications for electronic components - 4CS1421 high frequency silicon dual insulated-gate field-effect transistors (Applicable for certification)
SJ/T 10834-1996 Detailed specifications for electronic components - CS111, CS112, CS113, CS114, CS115 and CS116 single-gate junction field-effect transistors (Applicable for certification)
SJ 2099-1982 Detail specification for N channel junction field-effect low power switching transistors,Type CS42
SJ 2103-1982 Detail specification for N channel junction field-effect low power switching transistors,Type CS46
SJ 2104-1982 Detail specification for N channel junction field-effect low power switching transistors,Type CS47
SJ 2092-1982 Detail specification for N channel junction field-effect low power switching transistors,Type CS35
SJ 2093-1982 Detail specification for N channel junction field-effect low power switching transistors,Type CS36
SJ 2094-1982 Detail specification for N channel junction field-effect low power switching transistors,Type CS37
SJ 2095-1982 Detail specification for N channel junction field-effect low power switching transistors,Type CS38
SJ 2096-1982 Detail specification for N channel junction field-effect low power switching transistors,Type CS39
SJ 2097-1982 Detail specification for N channel junction field-effect low power switching transistors,Type CS40
SJ 2105-1982 Detail specification for N channel junction field-effect low power switching transistors,Type CS48
SJ 2106-1982 Detail specification for N channel junction field-effect low power switching transistors,Type CS49
SJ 2107-1982 Detail specification for N channel junction field-effect low power switching transistors,Type CS50
SJ 2108-1982 Detail specification for N channel junction field-effect low power switching transistors,Type CS51
SJ 2100-1982 Detail specification for N channel junction field-effect low power switching transistors,Type CS43
SJ 2102-1982 Detail specification for N channel junction field-effect low power switching transistors,Type CS45
SJ 2098-1982 Detail specification for N channel junction field-effect low power switching transistors,Type CS41
SJ 2101-1982 Detail specification for N channel junction field-effect low power switching transistors,Type CS44

National Metrological Verification Regulations of the People's Republic of China, field effect transistor

JJG(电子) 04049-1995 Guoyang Double Gate Field Effect Transistor CX Tester Verification Regulations
JJG(电子) 04046-1995 Verification regulations for QC-13 type field effect transistor transconductance parameter tester

IECQ - IEC: Quality Assessment System for Electronic Components, field effect transistor

QC 750106-1993 Semiconductor Devices Discrete Devices Part 8: Field-Effect Transistors Section Two - Blank Detail Specification for Field-Effect Transistors for Case-Rated Power Amplifier Applications (IEC 747-8-2 ED 1)
QC 750114-1995 Semiconductor Devices - Discrete Devices - Part 8: Field-Effect Transistors - Section 3: Blank Detail Specification for Case-Rated Field-Effect Transistors for Switching Applications (IEC 747-8-3 ED 1)
QC 750112-1987 Semiconductor Devices Discrete Devices Part 8: Field-Effect Transistors Section One - Blank Detail Specification for Single-Gate Field- Effect Transistors@ up to 5W and 1 GHz (IEC 747-8-1 ED 1)
QC 750114-1996 Harmonized System of Quality Assessment for Electronic Components Semiconductor Devices - Discrete Devices Field-Effect Transistors - Blank Detail Specification for Case-Rated Field-Effect Transistors for Switching Applications (IEC 747-8-3:1995)
QC 750115-2000 Semiconductor Devices - Discrete Devices - Part 4-1: Microwave Diodes and Transistors - Microwave Field Effect Transistors - Blank Detail Specification (IEC 60747-4-1:2000)

Group Standards of the People's Republic of China, field effect transistor

T/CASAS 006-2020 The general specification for silicon carbide metal-oxide-semiconductor field-effect-transistor
T/CASAS 022-2022 Technical specification for gallium nitride field effect transistor used in line terminal units and triphase electricity meters
T/CASAS 007-2020 Test Specification for Silicon Carbide（SiC）Field-effect Transistors（MOSFET）Module of Electric Vehicles
T/CASAS 015-2022 Power cycling test method for silicon carbide metal-oxide-semiconductor field-effect-transistor（SiC MOSFET）
T/CASAS 016-2022 Transient dual test method for the measurement of the thermal resistance junction to case of silicon carbide metal-oxide-semiconductor field-effect-transistor（SiC MOSFET）

Association Francaise de Normalisation, field effect transistor

NF C96-051*NF EN 62373:2006 Bias-temperature stability test for metal-oxide, semiconductor, field-effect transistors (MOSFET)
NF C96-008:1985 Semiconductor devices. Discrete devices and integrated circuits. Part 8 : field-effect transistors.
NF EN 62373:2006 Essai de stabilité de température en polarisation pour transistors à effet de champ métal-oxyde-semiconducteur (MOSFET)
NF EN 62417:2010 Dispositifs à semiconducteurs - Essais d'ions mobiles pour transistors à semiconducteur à oxyde métallique à effet de champ (MOSFET)
NF C86-712:1981 Harmonized system of quality assessment for electronic components. Blank detail specification. Single gate field-effect transistors.
NF C80-203*NF EN 62417:2010 Semiconductor devices - Mobile ion tests for metal-oxide semiconductor field effect transistors (MOSFETs).

German Institute for Standardization, field effect transistor

DIN EN 62373:2007 Bias-temperature stability test for metal-oxide, semiconductor, field-effect transistors (MOSFET) (IEC 62373:2006); German version EN 62373:2006
DIN EN 62373:2007-01 Bias-temperature stability test for metal-oxide, semiconductor, field-effect transistors (MOSFET) (IEC 62373:2006); German version EN 62373:2006
DIN EN 62417:2010-12 Semiconductor devices - Mobile ion tests for metal-oxide semiconductor field effect transistors (MOSFETs) (IEC 62417:2010); German version EN 62417:2010
DIN 55659-2:2012 Paints and varnishes - Determination of pH value - Part 2: pH-electrodes with ISFET technology
DIN EN 62417:2010 Semiconductor devices - Mobile ion tests for metal-oxide semiconductor field effect transistors (MOSFETs) (IEC 62417:2010); German version EN 62417:2010

Danish Standards Foundation, field effect transistor

DS/EN 62373:2006 Bias-temperature stability test for metal-oxide, semiconductor, field-effect transistors (MOSFET)
DS/EN 62417:2010 Semiconductor devices - Mobile ion tests for metal-oxide semiconductor field effect transistors (MOSFETs)
DS/IEC 747-8:1992 Semiconductor devices. Discrete devices. Part 8: Field-effect transistors

ES-UNE, field effect transistor

UNE-EN 62373:2006 Bias-temperature stability test for metal-oxide, semiconductor, field-effect transistors (MOSFET) (IEC 62373:2006). (Endorsed by AENOR in November of 2006.)
UNE-EN 62417:2010 Semiconductor devices - Mobile ion tests for metal-oxide semiconductor field effect transistors (MOSFETs) (Endorsed by AENOR in September of 2010.)

Institute of Electrical and Electronics Engineers (IEEE), field effect transistor

IEEE Std 581-1978 IEEE Standard Definitions, Symbols, and Characterization of Metal-Nitride-Oxide Field-Effect Transistors
IEEE 581-1978 IEEE Standard Definitions, Symbols, and Characterization of Metal-Nitrite-Oxide Field-Effect Transistors

Lithuanian Standards Office , field effect transistor

LST EN 62373-2006 Bias-temperature stability test for metal-oxide, semiconductor, field-effect transistors (MOSFET) (IEC 62373:2006)
LST EN 62417-2010 Semiconductor devices - Mobile ion tests for metal-oxide semiconductor field effect transistors (MOSFETs) (IEC 62417:2010)

Taiwan Provincial Standard of the People's Republic of China, field effect transistor

CNS 8104-1981 Method for Measuring MOSFET Linear Threshold Voltage
CNS 8106-1981 Method for Measuring MOSFET Saturated Threshold Voltage
CNS 5542-1988 Environmental Testing Methods and Endurance Testing Methods for Discrete Semiconductor Devices (Continuous Operation Test of Field Effect Transistor
CNS 5544-1988 Environmantal Testing Methods and Endurance Testing Methods for Discrate Semiconductor Devices (Intermittent Operation Test of Fleld Effect Transistor)
CNS 5546-1988 Environmental Testing Methods and Endurance Testing Methods for Discrete Semiconductor Devices (Reverse Bias Test of Field Effect Transistor Under High Temperature)

未注明发布机构, field effect transistor

BS EN 150012:1993(2000) Specification for Harmonized system of quality assessment for electronic components — Blank detail specification — Single gate field - effect transistors

American Society for Testing and Materials (ASTM), field effect transistor

ASTM F616M-96 Standard Test Method for Measuring MOSFET Drain Leakage Current (Metric)
ASTM F616M-96(2003) Standard Test Method for Measuring MOSFET Drain Leakage Current (Metric)

工业和信息化部, field effect transistor

SJ/T 9014.8.2-2018 Semiconductor Devices Discrete Devices Part 8-2: Blank Detailed Specification for Superjunction Metal Oxide Semiconductor Field Effect Transistors

PH-BPS, field effect transistor

PNS IEC 62373-1:2021 Semiconductor devices - Bias-temperature stability test for metal-ox ide, semiconductor, field-effect transistors (MOSFET) - Part 1: Fast BTI test for MOSFET