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semiconducting material semiconducting material

semiconducting material semiconducting material, Total:380 items.

In the international standard classification, semiconducting material semiconducting material involves: Insulating fluids, Semiconducting materials, Testing of metals, Test conditions and procedures in general, Cutting tools, Printed circuits and boards, Electronic components in general, Vocabularies, Semiconductor devices, Analytical chemistry, Electromechanical components for electronic and telecommunications equipment, Electrical wires and cables, Rectifiers. Convertors. Stabilized power supply, Mechanical structures for electronic equipment, Power transmission and distribution networks, TESTING, Ceramics, Elements of buildings, Optics and optical measurements, Surface treatment and coating, Electronic display devices, Conducting materials, Raw materials for rubber and plastics, Fasteners, Integrated circuits. Microelectronics, Protection against electric shock, Waxes, bituminous materials and other petroleum products, Plastics, Inks. Printing inks, Medical equipment, Iron and steel products, Electrical and electronic testing, Insulating materials, Products of the textile industry, Magnetic materials, Components for electrical equipment, Construction materials, Electrical equipment for working in special conditions, Radiocommunications, Protection against fire, Rubber and plastics products, Crude petroleum, Fuels, Electrical accessories, Non-ferrous metals, Power stations in general, Pipeline components and pipelines, Non-destructive testing, Electromagnetic compatibility (EMC).


General Administration of Quality Supervision, Inspection and Quarantine of the People‘s Republic of China, semiconducting material semiconducting material

  • GB/T 14264-1993 Semiconductor materials-Terms and definitions
  • GB/T 14264-2009 Semiconductor materials-Terms and definitions
  • GB/T 31469-2015 Semiconductor materials cutting fluid
  • GB/T 1550-1997 Standard methods for measuring conductivity type of extrinsic semiconducting materials
  • GB/T 14844-1993 Designations of semiconductor materials
  • GB/T 4298-1984 The activation analysis method for the determination of elemental impurities in semiconductor silicon materials
  • GB/T 3048.3-1994 Test methods for determining electrical properties of electric cables and wires.Measurement of volumeresistivity of semi-conducting rubbers and plastics
  • GB/T 7423.2-1987 Heat sink of semiconductor devices--Heat sink, Extruded shapes
  • GB 7423.2-1987 Semiconductor device heat sink profile heat sink
  • GB/T 3048.3-2007 Test methods for electrical properties of electric cables and wires.Part 3: Test of volume resistivity of semi-conducting rubbers and plastics
  • GB/T 43136-2023 Superabrasive products: grinding wheels for precision scribing of semiconductor chips
  • GB/T 16525-2015 Semiconductor integrated circuits.Specification of leadframes for plastic leaded chip carrier package
  • GB/T 14112-2015 Semiconductor integrated circuits.Specification for stamped leadframes of plastic DIP
  • GB/T 14112-1993 Semiconductor integrated circuits Specification for stamped leadframes of plastic DIP
  • GB/T 15876-2015 Semiconductor integrated circuits.Specification of leadframes for plastic quad flat package
  • GB/T 11436-1989 Chemical analysis methods for products and semifinished products made of soft ferrite materials
  • GB/T 11436-2012 Chemical analysis methods for products and semi-finished products made of soft ferrite materials
  • GB/T 32981-2016 Method for determination of equivalent thermal conductivity of wall materials
  • GB/T 3048.2-1994 Test methods for determining electrical properties of electric cables and wires.Measurement of resistivity of metallic conductive materials

RO-ASRO, semiconducting material semiconducting material

HU-MSZT, semiconducting material semiconducting material

Professional Standard - Electron, semiconducting material semiconducting material

  • SJ/T 11775-2021 Multi-wire saw used for semiconductor materials
  • SJ/T 11067-1996 Commonly used terminology for semiconductor photoelectric materials and pyroelectric materials in infrared detecting materials
  • SJ/Z 3206.13-1989 General rules for emision spectrum analysis for semiconductor materials
  • SJ/T 10414-2015 Solder for semiconductor device
  • SJ/T 10414-1993 Solder for semicoductor device
  • SJ 20744-1999 General rule of infrared absorption spectral analysis for the impurity concentration in semiconductor materials
  • SJ/T 1505-1997 Chemical analysis methods for products and semifinished products made of gyromagnetic ferrite materials
  • SJ 3249.1-1989 Methods of measurement for resistivity of semi-insulation Gallium arsenide and Indium phosphide single crystal material

国家市场监督管理总局、中国国家标准化管理委员会, semiconducting material semiconducting material

  • GB/T 1550-2018 Test methods for conductivity type of extrinsic semiconducting materials
  • GB/T 14844-2018 Designations of semiconductor materials
  • GB/T 36646-2018 Equipment for preparation of nitride semiconductor materials by hydride vapor phase epitaxy
  • GB/T 37131-2018 Nanotechnologies—Test method of semiconductor nanopowder using UV-Vis diffuse reflectance spectroscopy
  • GB/T 39429-2020 Non-destructive testing—Method for thermoelectric sorting of electrically conductive materials
  • GB/T 35033-2018 Measurement method on conductive properties of electromagnetic shielding material and bonding impedance of metal material for 30MHz to 1GHz

British Standards Institution (BSI), semiconducting material semiconducting material

  • BS IEC 62899-203:2018 Printed electronics. Materials. Semiconductor ink
  • BS IEC 62951-5:2019 Semiconductor devices. Flexible and stretchable semiconductor devices - Test method for thermal characteristics of flexible materials
  • BS IEC 62951-4:2019 Semiconductor devices. Flexible and stretchable semiconductor devices - Fatigue evaluation for flexible conductive thin film on the substrate for flexible semiconductor devices
  • BS EN 62047-18:2013 Semiconductor devices. Micro-electromechanical devices. Bend testing methods of thin film materials
  • BS EN 62047-2:2006 Semiconductor devices - Micro-electromechanical devices - Part 2: Tensile testing method of thin film materials
  • 21/30428334 DC BS EN IEC 62899-203. Printed electronics. Part 203. Materials. Semiconductor ink
  • BS EN 62047-10:2011 Semiconductor devices. Micro-electromechanical devices. Micro-pillar compression test for MEMS materials
  • BS EN 62047-21:2014 Semiconductor devices. Micro-electromechanical devices. Test method for Poisson's ratio of thin film MEMS materials
  • BS EN 62047-6:2010 Semiconductor devices - Micro-electromechanical devices - Axial fatigue testing methods of thin film materials
  • BS EN 60749-39:2006 Semiconductor devices - Mechanical and climatic test methods - Measurement of moisture diffusivity and water solubility in organic materials used for semiconductor components
  • BS EN 62047-14:2012 Semiconductor devices. Micro-electromechanical devices. Forming limit measuring method of metallic film materials
  • BS EN IEC 60749-39:2022 Tracked Changes. Semiconductor devices. Mechanical and climatic test methods. Measurement of moisture diffusivity and water solubility in organic materials used for semiconductor components
  • BS IEC 62047-31:2019 Semiconductor devices. Micro-electromechanical devices - Four-point bending test method for interfacial adhesion energy of layered MEMS materials
  • 20/30425840 DC BS EN IEC 60749-39. Semiconductor devices. Mechanical and climatic test methods. Part 39. Measurement of moisture diffusivity and water solubility in organic materials used for semiconductor components
  • BS EN 62047-12:2011 Semiconductor devices. Micro-electromechanical devices. Bending fatigue testing method of thin film materials using resonant vibration of MEMS structures
  • BS PD CEN/TS 16599:2014 Photocatalysis. Irradiation conditions for testing photocatalytic properties of semiconducting materials and the measurement of these conditions
  • BS ISO 10677:2011 Fine ceramics (advanced ceramics, advanced technical ceramics). Ultraviolet light source for testing semiconducting photocatalytic materials
  • BS 3187:1978 Specification for electrically conducting rubber flooring
  • BS EN 62047-11:2013 Semiconductor devices. Micro-electromechanical devices. Test method for coefficients of linear thermal expansion of free-standing materials for micro-electromechanical systems
  • BS IEC 62899-202:2016 Printed electronics. Materials. Conductive ink
  • BS ISO 13125:2013 Fine ceramics (advanced ceramics, advanced technical ceramics). Test method for antifungal activity of semiconducting photocatalytic materials
  • BS ISO 19635:2016 Fine ceramics (advanced ceramics, advanced technical ceramics). Test method for antialgal activity of semiconducting photocatalytic materials
  • BS ISO 27447:2009 Fine ceramics (advanced ceramics, advanced technical ceramics) - Test method for antibacterial activity of semiconducting photocatalytic materials
  • BS EN 62047-8:2011 Semiconductor devices. Micro-electromechanical devices. Strip bending test method for tensile property measurement of thin films
  • BS IEC 62899-202-5:2018 Printed electronics - Materials. Conductive ink. Mechanical bending test of a printed conductive layer on an insulating substrate
  • BS ISO 27447:2019 Tracked Changes. Fine ceramics (advanced ceramics, advanced technical ceramics). Test method for antibacterial activity of semiconducting photocatalytic materials
  • BS 7808:1995 Electrical insulating materials - A.C. voltage endurance evaluation - Introduction

Indonesia Standards, semiconducting material semiconducting material

Group Standards of the People's Republic of China, semiconducting material semiconducting material

  • T/CASME 798-2023 Specialized processing tools for semiconductor materials
  • T/SHDSGY 135-2023 New Energy Semiconductor Silicon Wafer Material Technology
  • T/CNIA 0143-2022 Ultrapure Resin Vessels for Trace Impurity Analysis of Semiconductor Materials
  • T/ZJATA 0017-2023 Chemical vapor deposition (CVD) epitaxy equipment for preparing silicon carbide semiconductor materials
  • T/CAS 374-2019 Semi-conductive buffer layer material for extruded insulated power cables with rated voltage above 26/35kV
  • T/CEC 229-2019 Polyolefin-based conductive material-coated metal conductor technical conditions
  • T/CASME 479-2023 Punched lead frame for plastic small outline packaging of semiconductor integrated circuits
  • T/SHPTA 014.2-2021 Modified polypropylene insulating compounds and semi-conductive shielding compounds for power cables of rated voltages from 6kV up to 35kV – Part 2 : Semi-conductive shielding compounds for polypropylene insulating power cables of rated voltages fro
  • T/SDAS 243-2021 Semi-conductive shielding material for extruded insulated cables with rated voltage 35kV and below

International Electrotechnical Commission (IEC), semiconducting material semiconducting material

  • IEC 62899-203:2018 Printed electronics - Part 203: Materials - Semiconductor ink
  • IEC 62951-5:2019 Semiconductor devices - Flexible and stretchable semiconductor devices - Part 5: Test method for thermal characteristics of flexible materials
  • IEC 62047-2:2006 Semiconductor devices - Micro-electromechanical devices - Part 2: Tensile testing method of thin film materials
  • IEC 62047-18:2013 Semiconductor devices - Micro-electromechanical devices - Part 18: Bend testing methods of thin film materials
  • IEC 60749-39:2021 RLV Semiconductor devices - Mechanical and climatic test methods - Part 39: Measurement of moisture diffusivity and water solubility in organic materials used for semiconductor components
  • IEC 60749-39:2021 Semiconductor devices - Mechanical and climatic test methods - Part 39: Measurement of moisture diffusivity and water solubility in organic materials used for semiconductor components
  • IEC 62047-6:2009 Semiconductor devices - Micro-electromechanical devices - Part 6: Axial fatigue testing methods of thin film materials
  • IEC 62047-21:2014 Semiconductor devices - Micro-electromechanical devices - Part 21: Test method for Poisson's ratio of thin film MEMS materials
  • IEC 62047-10:2011/COR1:2012 Semiconductor devices - Micro-electromechanical devices - Part 10: Micro-pillar compression test for MEMS materials; Corrigendum 1
  • IEC 60749-39:2006 Semiconductor devices - Mechanical and climatic test methods - Part 39: Measurement of moisture diffusivity and water solubility in organic materials used for semiconductor components
  • IEC 62047-14:2012 Semiconductor devices - Microelectromechanical devices - Part 14: Forming limit measuring method of metallic film materials
  • IEC 61479:2001 Live working - Flexible conductor covers (line hoses) of insulating material
  • IEC 62047-31:2019 Semiconductor devices - Micro-electromechanical devices - Part 31: Four-point bending test method for interfacial adhesion energy of layered MEMS materials
  • IEC 62047-12:2011 Semiconductor devices - Microelectromechanical devices - Part 12: Bending fatigue testing method of thin film materials using resonant vibration of MEMS structures
  • IEC 61479:2001+AMD1:2002 CSV Live working - Flexible conductor covers (line hoses) of insulating material
  • IEC 62899-202:2016 Printed electronics - Part 202: Materials - Conductive ink
  • IEC 62047-11:2013 Semiconductor devices - Micro-electromechanical devices - Part 11: Test method for coefficients of linear thermal expansion of free-standing materials for micro-electromechanical systems

German Institute for Standardization, semiconducting material semiconducting material

  • DIN 50447:1995 Testing of materials for semiconductor technology - Contactless determination of the electrical sheet resistance of semiconductor layers with the eddy-current method
  • DIN 50448:1998 Testing of materials for semiconductor technology - Contactless determination of the electrical resistivity of semi-insulating semi-conductor slices using a capacitive probe
  • DIN 50445:1992 Testing of materials for semiconductor technology; contactless determination of the electrical resistivity of semiconductor slices with the eddy current method; homogeneously doped semiconductor wafers
  • DIN 50439:1982 Testing of materials for semiconductor technology; determination of the dopant concentration profile of single crystalline semiconductor material by means of the capacitancevoltage method and mercury contact
  • DIN 50441-1:1996 Testing of materials for semiconductor technology - Determination of the geometric dimensions of semiconductor wafers - Part 1: Thickness and thickness variation
  • DIN 50441-2:1998 Testing of materials for semiconductor technology - Determination of the geometric dimensions of semiconductor wafers - Part 2: Testing of edge profile
  • DIN SPEC 1994:2017-02 Testing of materials for semiconductor technology - Determination of anions in weak acids
  • DIN 50449-2:1998 Testing of materials for semiconductor technology - Determination of impurity content in semiconductors by infrared absorption - Part 2: Boron in gallium arsenide
  • DIN EN 62047-2:2007-02 Semiconductor devices - Micro-electromechanical devices - Part 2: Tensile testing method of thin film materials (IEC 62047-2:2006); German version EN 62047-2:2006
  • DIN EN 62047-10:2012-03 Semiconductor devices - Micro-electromechanical devices - Part 10: Micro-pillar compression test for MEMS materials (IEC 62047-10:2011); German version EN 62047-10:2011
  • DIN 50442-1:1981 Testing of semi-conductive inorganic materials; determination of the surface structure of circular monocrystalline semi-conductive slices; as-cut and lapped slices
  • DIN 50454-2:1994 Testing of materials for semiconductor technology - Determination of the dislocation etch pits density in monocrystals of III-V-compound semiconductors - Part 2: Indium phosphide
  • DIN 50454-3:1994 Testing of materials for semiconductor technology - Determination of the dislocation etch pits density in monocrystals of III-V-compound semiconductors - Part 3: Gallium phosphide
  • DIN EN 62047-18:2014-04 Semiconductor devices - Micro-electromechanical devices - Part 18: Bend testing methods of thin film materials (IEC 62047-18:2013); German version EN 62047-18:2013
  • DIN EN 62047-2:2007 Semiconductor devices - Micro-electromechanical devices - Part 2: Tensile testing method of thin film materials (IEC 62047-2:2006); German version EN 62047-2:2006
  • DIN EN 62047-6:2010-07 Semiconductor devices - Micro-electromechanical devices - Part 6: Axial fatigue testing methods of thin film materials (IEC 62047-6:2009); German version EN 62047-6:2010
  • DIN 50443-1:1988 Testing of materials for use in semiconductor technology; detection of crystal defects and inhomogeneities in silicon single crystals by X-ray topography
  • DIN 50449-1:1997 Testing of materials for semiconductor technology - Determination of impurity content in semiconductors by infrared absorption - Part 1: Carbon in gallium arsenide
  • DIN EN 60749-39:2007 Semiconductor devices - Mechanical and climatic test methods - Part 39: Measurement of moisture diffusivity and water solubility in organic materials used for semiconductor components (IEC 60749-39:2006); German version EN 60749-39:2006
  • DIN EN 60749-39:2007-01 Semiconductor devices - Mechanical and climatic test methods - Part 39: Measurement of moisture diffusivity and water solubility in organic materials used for semiconductor components (IEC 60749-39:2006); German version EN 60749-39:2006 / Note: To be r...
  • DIN EN 62047-14:2012-10 Semiconductor devices - Micro-electromechanical devices - Part 14: Forming limit measuring method of metallic film materials (IEC 62047-14:2012); German version EN 62047-14:2012
  • DIN 50433-2:1976 Testing of semi-conducting inorganic materials; determining the orientation of single crystals by means of optical reflection figure
  • DIN 50435:1988 Testing of semiconductor materials; determination of the radial resistivity variation of silicon or germanium slices by means of the four-probe/direct current method
  • DIN EN 62047-21:2015-04 Semiconductor devices - Micro-electromechanical devices - Part 21: Test method for Poisson's ratio of thin film MEMS materials (IEC 62047-21:2014); German version EN 62047-21:2014
  • DIN 50454-1:2000 Testing of materials for semiconductor technology - Determination of dislocations in monocrystals of III-V-compound semi-conductors - Part 1: Gallium arsenide
  • DIN 50433-3:1982 Testing of materials for semiconductor technology; determination of the orientation of single crystals by means of Laue back scattering
  • DIN 50441-4:1999 Testing of materials for semiconductor technology - Determination of the geometric dimensions of semiconductor wafers - Part 4: Slice diameter, diamter variation, flat diameter, flat length, flat depth
  • DIN 50441-3:1985 Testing of materials for semiconductor technology; measurement of the geometric dimensions of semiconductor slices; determination of flatness deviation of polished slices by means of the multiple beam interference
  • DIN EN IEC 60749-39:2021-07 Semiconductor devices - Mechanical and climatic test methods - Part 39: Measurement of moisture diffusivity and water solubility in organic materials used for semiconductor components (IEC 47/2652/CDV:2020); English version prEN IEC 60749-39:2020 / Not...
  • DIN 50456-3:1999 Testing of materials for semiconductor technology - Method for the characterisation of moulding compounds for electronic components - Part 3: Determination of cationic impurities
  • DIN 50437:1979 Testing of semi-conductive inorganic materials; measuring the thickness of silicon epitaxial layer thickness by infrared interference method
  • DIN CEN/TS 16599:2014-07*DIN SPEC 7397:2014-07 Photocatalysis - Irradiation conditions for testing photocatalytic properties of semiconducting materials and the measurement of these conditions; German version CEN/TS 16599:2014
  • DIN 50433-1:1976 Testing of semi-conducting inorganic materials; determining the orientation of single crystals by means of X-ray diffraction
  • DIN 50431:1988 Testing of semiconductor materials; measurement of the resistivity of silicon or germanium single crystals by means of the four probe/direct current method with collinear array
  • DIN 50438-2:1982 Testing of materials for semiconductor technology; determination of impurty content in silicon by infrared absorption; carbon
  • DIN EN 62047-12:2012-06 Semiconductor devices - Micro-electromechanical devices - Part 12: Bending fatigue testing method of thin film materials using resonant vibration of MEMS structures (IEC 62047-12:2011); German version EN 62047-12:2011
  • DIN 50452-1:1995-11 Testing of materials for semiconductor technology - Test method for particle analysis in liquids - Part 1: Microscopic determination of particles
  • DIN EN 62047-11:2014-04 Semiconductor devices - Micro-electromechanical devices - Part 11: Test method for coefficients of linear thermal expansion of free-standing materials for micro-electromechanical systems (IEC 62047-11:2013); German version EN 62047-11:2013
  • DIN 50440:1998 Testing of materials for semiconductor technology - Measurement of carrier lifetime in silicon single crystals - Recombination carrier lifetime at low injection by photoconductivity method
  • DIN 50453-1:1990 Testing of materials for semiconductor technology; determination of etch rates of etching mixtures; silicium monocrystals; gravimetric method
  • DIN 50455-1:2009-10 Testing of materials for semiconductor technology - Methods for characterizing photoresists - Part 1: Determination of coating thickness with optical methods
  • DIN 50455-2:1999-11 Testing of materials for semiconductor technology - Methods for the characterisation photoresists - Part 2: Determination of photosensitivity of positive photoresists
  • DIN 50455-1:2009 Testing of materials for semiconductor technology - Methods for characterizing photoresists - Part 1: Determination of coating thickness with optical methods
  • DIN 50453-1:2023-08 Testing of materials for semiconductor technology - Determination of etch rates of etching mixtures - Part 1: Silicium monocrystals, gravimetric method
  • DIN 50452-1:1995 Testing of materials for semiconductor technology - Test method for particle analysis in liquids - Part 1: Microscopic determination of particles
  • DIN 50452-3:1995 Testing of materials for semiconductor technology - Test method for particle analysis in liquids - Part 3: Calibration of optical particle counters
  • DIN 19698-1:2014-05 Characterization of solids - Sampling of solid and semi-solid materials - Part 1: Guidance for the segmental sampling of stockpiles of unknown composite
  • DIN EN IEC 60749-39:2021 Semiconductor devices - Mechanical and climatic test methods - Part 39: Measurement of moisture diffusivity and water solubility in organic materials used for semiconductor components (IEC 47/2652/CDV:2020); English version prEN IEC 60749-39:2020
  • DIN EN IEC 60749-39:2023-10 Semiconductor devices - Mechanical and climatic test methods - Part 39: Measurement of moisture diffusivity and water solubility in organic materials used for semiconductor components (IEC 60749-39:2021); German version EN IEC 60749-39:2022 / Note: DIN...
  • DIN 50434:1986 Testing of materials for semiconductor technology; detection of crystal defects in monocrystalline silicon using etching techniques on {111} and {100} surfaces
  • DIN 50452-3:1995-10 Testing of materials for semiconductor technology - Test method for particle analysis in liquids - Part 3: Calibration of optical particle counters
  • DIN EN 62047-21:2015 Semiconductor devices - Micro-electromechanical devices - Part 21: Test method for Poisson's ratio of thin film MEMS materials (IEC 62047-21:2014); German version EN 62047-21:2014
  • DIN EN 62047-10:2012 Semiconductor devices - Micro-electromechanical devices - Part 10: Micro-pillar compression test for MEMS materials (IEC 62047-10:2011); German version EN 62047-10:2011
  • DIN 50453-2:1990 Testing of materials for semiconductor technology; determination of etch rates of etching mixtures; silicium-dioxid coating; optical method
  • DIN 51908:2022-10 Testing of carbonaceous materials - Determination of thermal conductivity at room temperature by means of a comparative method - Solid material
  • DIN EN 62047-18:2014 Semiconductor devices - Micro-electromechanical devices - Part 18: Bend testing methods of thin film materials (IEC 62047-18:2013); German version EN 62047-18:2013
  • DIN 50452-2:2009-10 Testing of materials for semiconductor technology - Test method for particle analysis in liquids - Part 2: Determination of particles by optical particle counters
  • DIN 50451-3:2014-11 Testing of materials for semiconductor technology - Determination of traces of elements in liquids - Part 3: Determination of 31 elements in high-purity nitric acid by ICP-MS
  • DIN 50451-7:2018-04 Testing of materials for semiconductor technology - Determination of traces of elements in liquids - Part 7: Determination of 31 elements in high-purity hydrochloric acid by ICP-MS
  • DIN 50450-1:1987-08 Testing of materials for semiconductor technology; determination of impurities in carrier gases and doping gases; determination of water impurity in hydrogen, oxygen, nitrogen, argon and helium by using a diphosphorus pentoxide cell
  • DIN EN 62047-6:2010 Semiconductor devices - Micro-electromechanical devices - Part 6: Axial fatigue testing methods of thin film materials (IEC 62047-6:2009); German version EN 62047-6:2010
  • DIN 50451-4:2007 Testing of materials for semiconductor technology - Determination of trace elements in liquids - Part 4: Determination of 34 elements in ultra pure water by mass spectrometry with inductively coupled plasma (ICP-MS)

RU-GOST R, semiconducting material semiconducting material

Shaanxi Provincial Standard of the People's Republic of China, semiconducting material semiconducting material

  • DB61/T 1250-2019 General Specification for Sic (Silicon Carbide) Material Semiconductor Discrete Devices

American National Standards Institute (ANSI), semiconducting material semiconducting material

  • ANSI/ASTM D3004:2008 Specification for Extruded Crosslinked and Thermoplastic Semi-conducting, Conductor and Insulation Shielding Materials
  • ANSI/ASTM D6095:2012 Test Method for Longitudinal Measurement of Volume Resistivity for Extruded Crosslinked and Thermoplastic Semiconducting Conductor and Insulation Shielding Materials
  • ANSI/UL 779-2011 Standard for Safety for Electrically Conductive Floorings
  • ANSI/UL 2360-2004 Test Methods for Determining the Combustibility Characteristics of Plastics Used in Semi-Conductor Tool Construction
  • ANSI/ASTM D4496:2013 New Standard Test Method for DC Resistance or Conductance of Moderately Conductive Materials
  • ANSI/ASTM D6343:2010 Test Methods for Thin Thermally Conductive Solid Materials for Electrical Insulation and Dielectric Applications

American Society for Testing and Materials (ASTM), semiconducting material semiconducting material

  • ASTM D3004-02 Standard Specification for Extruded Crosslinked and Thermoplastic Semi-Conducting, Conductor and Insulation Shielding Materials
  • ASTM D3004-97 Standard Specification for Extruded Crosslinked and Thermoplastic Semi-Conducting, Conductor and Insulation Shielding Materials
  • ASTM D3004-08(2020) Standard Specification for Crosslinked and Thermoplastic Extruded Semi-Conducting, Conductor, and Insulation Shielding Materials
  • ASTM D6095-99 Standard Test Method for Volume Resistivity for Extruded Crosslinked and Thermoplastic Semiconducting Conductor and Insulation Shielding Materials
  • ASTM D6095-05 Standard Test Method for Volume Resistivity for Extruded Crosslinked and Thermoplastic Semiconducting Conductor and Insulation Shielding Materials
  • ASTM D6095-06 Standard Test Method for Longitudinal Measurement of Volume Resistivity for Extruded Crosslinked and Thermoplastic Semiconducting Conductor and Insulation Shielding Materials
  • ASTM D6095-12 Standard Test Method for Longitudinal Measurement of Volume Resistivity for Extruded Crosslinked and Thermoplastic Semiconducting Conductor and Insulation Shielding Materials
  • ASTM D6095-12(2023) Standard Test Method for Longitudinal Measurement of Volume Resistivity for Extruded Crosslinked and Thermoplastic Semiconducting Conductor and Insulation Shielding Materials
  • ASTM D6095-12(2018) Standard Test Method for Longitudinal Measurement of Volume Resistivity for Extruded Crosslinked and Thermoplastic Semiconducting Conductor and Insulation Shielding Materials
  • ASTM B193-02 Standard Test Method for Resistivity of Electrical Conductor Materials
  • ASTM B193-00 Standard Test Method for Resistivity of Electrical Conductor Materials
  • ASTM B193-01 Standard Test Method for Resistivity of Electrical Conductor Materials
  • ASTM B193-87(1992) Standard Test Method for Resistivity of Electrical Conductor Materials
  • ASTM B193-19 Standard Test Method for Resistivity of Electrical Conductor Materials
  • ASTM B193-87 Standard Test Method for Resistivity of Electrical Conductor Materials
  • ASTM B193-20 Standard Test Method for Resistivity of Electrical Conductor Materials
  • ASTM B193-02(2008) Standard Test Method for Resistivity of Electrical Conductor Materials
  • ASTM B193-02(2014) Standard Test Method for Resistivity of Electrical Conductor Materials
  • ASTM B193-16 Standard Test Method for Resistivity of Electrical Conductor Materials
  • ASTM E977-84(1999) Standard Practice for Thermoelectric Sorting of Electrically Conductive Materials
  • ASTM E977-05(2019) Standard Practice for Thermoelectric Sorting of Electrically Conductive Materials
  • ASTM A1093/A1093M-15(2020)e1 Standard Specification for Electrolytic Plasma Treatment Processing of Conductive Materials
  • ASTM A1093/A1093M-15 Standard Specification for Electrolytic Plasma Treatment Processing of Conductive Materials
  • ASTM B896-99 Standard Test Methods for Evaluating Connectability Characteristics of Electrical Conductor Materials
  • ASTM B896-99(2005) Standard Test Methods for Evaluating Connectability Characteristics of Electrical Conductor Materials
  • ASTM B896-10 Standard Test Methods for Evaluating Connectability Characteristics of Electrical Conductor Materials
  • ASTM B896-10e1 Standard Test Methods for Evaluating Connectability Characteristics of Electrical Conductor Materials
  • ASTM B896-10(2015) Standard Test Methods for Evaluating Connectability Characteristics of Electrical Conductor Materials
  • ASTM D4496-21 Standard Test Method for D-C Resistance or Conductance of Moderately Conductive Materials
  • ASTM D4496-87(1998)e1 Standard Test Method for D-C Resistance or Conductance of Moderately Conductive Materials
  • ASTM D6343-99(2004) Test Methods for Thin Thermally Conductive Solid Materials for Electrical Insulation and Dielectric Applications
  • ASTM D6343-99 Test Methods for Thin Thermally Conductive Solid Materials for Electrical Insulation and Dielectric Applications
  • ASTM D4496-04 Standard Test Method for D-C Resistance or Conductance of Moderately Conductive Materials
  • ASTM D4496-04e1 Standard Test Method for D-C Resistance or Conductance of Moderately Conductive Materials
  • ASTM D4496-13 Standard Test Method for D-C Resistance or Conductance of Moderately Conductive Materials
  • ASTM D4496-21e1 Standard Test Method for D-C Resistance or Conductance of Moderately Conductive Materials
  • ASTM E977-05 Standard Practice for Thermoelectric Sorting of Electrically Conductive Materials
  • ASTM E977-05(2014) Standard Practice for Thermoelectric Sorting of Electrically Conductive Materials

Korean Agency for Technology and Standards (KATS), semiconducting material semiconducting material

  • KS C 6520-2021 Components and materials of semiconductor process —Measurement of wear characteristics by plasma
  • KS C IEC 62047-18:2016 Semiconductor devices ― Micro-electromechanical devices ― Part 18: Bend testing methods of thin film materials
  • KS C IEC 62047-22:2016 Semiconductor devices ― Micro-electromechanical devices ― Part 18: Bend testing methods of thin film materials
  • KS C IEC 62047-18-2016(2021) Semiconductor devices ― Micro-electromechanical devices ― Part 18: Bend testing methods of thin film materials
  • KS C IEC 62047-22-2016(2021) Semiconductor devices ― Micro-electromechanical devices ― Part 18: Bend testing methods of thin film materials
  • KS C IEC 60749-39-2006(2021) Semiconductor devices-Mechanical and climatic test methods-Part 39:Measurement of moisture diffusivity and water solubility in organic materials used for semiconductor components
  • KS C IEC 60749-39-2006(2016) Semiconductor devices-Mechanical and climatic test methods-Part 39:Measurement of moisture diffusivity and water solubility in organic materials used for semiconductor components
  • KS C 6520-2019 Components and materials of semiconductor process —Measurement of wear characteristics by plasma
  • KS C IEC 60749-39:2006 Semiconductor devices-Mechanical and climatic test methods-Part 39:Measurement of moisture diffusivity and water solubility in organic materials used for semiconductor components
  • KS M 6773-2014(2019) Testing method for volume resistivity of electrically conductive rubber and plastic materials
  • KS M 6773-2014 Testing method for volume resistivity of electrically conductive rubber and plastic materials
  • KS L ISO 27447-2011(2016) Fine ceramics (advanced ceramics, advanced technical ceramics)-Test method for antibacterial activity of semiconducting photocatalytic materials
  • KS L ISO 27447-2011(2021) Fine ceramics (advanced ceramics, advanced technical ceramics)-Test method for antibacterial activity of semiconducting photocatalytic materials
  • KS C 6521-2019 Method of evaluation for coating components of semiconductor and LCD process
  • KS C 2603-1980 Testing Method for Conductor-Resistance and Resistivity of Metallic Resistance materials
  • KS C 2603-1980(2020) Testing Method for Conductor-Resistance and Resistivity of Metallic Resistance materials
  • KS L ISO 27447:2011 Fine ceramics (advanced ceramics, advanced technical ceramics)-Test method for antibacterial activity of semiconducting photocatalytic materials
  • KS C 2129-1996(2001) TESTING METHODS FOR DC RESISTANCE OR CONDUCTANCE OF INSULATING MATERIALS
  • KS C IEC 62899-202:2020 Printed electronics — Part 202: Materials — Conductive ink
  • KS C IEC 61479:2005 Live working-Flexible conductor covers(line hoses) of insulating material
  • KS C 2129-2004 TESTING METHODS FOR DC RESISTANCE OR CONDUCTANCE OF INSULATING MATERIALS

Professional Standard - Machinery, semiconducting material semiconducting material

  • JB/T 8175-1999 Outline dimensions of extruded heat sink for power semiconductor devices
  • JB/T 5781-1991 Sectioned radiator for power semiconductor devices. Technical specification
  • JB/T 6819.3-1993 Instrument material terminology - Resistance material, conducting material and electric contact material
  • JB/T 10738-2007 Semi-conductive shielding compound for power cables of rated voltages up to and including 35kV

Association Francaise de Normalisation, semiconducting material semiconducting material

  • NF ISO 10677:2011 Céramiques techniques - Sources lumineuses UV destinée aux essais des matériaux photocatalytiques semi-conducteurs
  • NF EN 62047-2:2006 Dispositifs à semiconducteurs - Dispositifs microélectromécaniques - Partie 2 : méthodes d'essais de traction des matériaux en couche mince
  • NF EN 62047-18:2014 Dispositifs à semiconducteurs - Dispositif microélectromécaniques - Partie 18 : méthodes d'essai de flexion des matériaux en couche mince
  • NF C96-050-10*NF EN 62047-10:2012 Semiconductor devices - Micro-electromechanical devices - Part 10: micro-pillar compression test for MEMS materials
  • NF C96-050-18*NF EN 62047-18:2014 Semiconductor devices - Micro-electromechanical devices - Part 18 : bend testing methods of thin film materials
  • NF C96-050-2*NF EN 62047-2:2006 Semiconductor devices - Micro-electromechanical devices - Part 2 : tensile testing methods of thin film materials.
  • NF EN 62047-6:2010 Dispositifs à semiconducteurs - Dispositifs microélectromécaniques - Partie 6 : méthodes d'essais de fatigue axiale des matériaux en couche mince
  • XP CEN/TS 16599:2014 Photocatalyse - Détermination des conditions d'irradiation pour tester les propriétés photocatalytiques de matériaux semi-conducteurs
  • NF C96-050-21*NF EN 62047-21:2014 Semiconductor devices - Micro-electromechanical devices - Part 21 : test method for Poisson's ratio of thin film MEMS materials
  • NF C96-050-6*NF EN 62047-6:2010 Semiconductor devices - Micro-electromechanical devices - Part 6 : axial fatigue testing methods of thin film materials
  • NF EN 62047-21:2014 Dispositifs à semiconducteurs - Dispositifs microélectromécaniques - Partie 21 : méthode d'essai relative au coefficient de Poisson des matériaux MEMS en couche mince
  • NF C96-022-39*NF EN 60749-39:2006 Semiconductor devices - Mechanical and climatic test methods - Part 39 : measurement of moisture diffusivity and water solubility in organic materials used for semiconductor components
  • NF C96-022-39*NF EN IEC 60749-39:2022 Semiconductor devices - Mechanical and climatic test methods - Part 39 : measurement of moisture diffusivity and water solubility in organic materials used for semiconductor components
  • NF EN 62047-14:2012 Dispositifs à semiconducteurs - Dispositifs microélectromécaniques - Partie 14 : méthode de mesure des limites de formage des matériaux à couche métallique
  • NF ISO 14605:2013 Céramiques techniques - Sources lumineuses destinées aux essais des matériaux photocatalytiques semi-conducteurs dans un environnement d'éclairage intérieur
  • NF EN IEC 60749-39:2022 Dispositifs à semiconducteurs - Méthodes d'essais mécaniques et climatiques - Partie 39 : mesure de la diffusivité d'humidité et de l'hydrosolubilité dans les matériaux organiques utilisés dans les composants à semiconducteurs
  • NF C96-050-14*NF EN 62047-14:2012 Semiconductor devices - Micro-electromechanical devices - Part 14 : forming limit measuring method of metallic film materials
  • NF EN 62047-10:2012 Dispositifs à semiconducteur - Dispositifs microélectromécaniques - Partie 10 : essai de compression utilisant la technique des micro-piliers pour les matériaux des MEMS
  • NF B44-103*NF ISO 10677:2011 Fine ceramics (advanced ceramics, advanced technical ceramics) - Ultraviolet light source for testing semiconducting photocatalytic materials
  • NF EN 62047-11:2014 Dispositifs à semiconducteurs - Dispositifs microélectromécaniques - Partie 11 : méthode d'essai pour les coefficients de dilatation thermique linéaire des matériaux autonomes pour systèmes microélectromécaniques
  • XP B44-014*XP CEN/TS 16599:2014 Photocatalysis - Irradiation conditions for testing photocatalytic properties of semiconducting materials and the measurement of these conditions
  • NF ISO 22197-4:2021 Céramiques techniques - Méthodes d'essai relatives à la performance des matériaux photocatalytiques semi-conducteurs pour la purification de l'air - Partie 4 : élimination du formaldéhyde
  • NF T51-223:1985 Plastics. Semi-cristalline materials. Determination of the conventional melting temperature by thermal analyse.
  • NF C96-050-12*NF EN 62047-12:2012 Semiconductor devices - Micro-electromechanical devices - Part 12 : bending fatigue testing method of thin film materials using resonant vibration of MEMS structures.
  • NF ISO 22197-5:2021 Céramiques techniques - Méthodes d'essai relatives à la performance des matériaux photocatalytiques semi-conducteurs pour la purification de l'air - Partie 5 : élimination du mercaptan méthylique
  • UTE C30-301:2001 Règles de l'art pour le transport routier des câbles, des conducteurs nus et des matériels de raccordement
  • NF C96-050-11*NF EN 62047-11:2014 Semiconductor devices - Micro-electromechanical devices - Part 11 : test method for coefficients of linear thermal expansion of free-standing materials for micro-electromechanical systems

Danish Standards Foundation, semiconducting material semiconducting material

  • DS/EN 62047-10:2011 Semiconductor devices - Micro-electromechanical devices - Part 10: Micro-pillar compression test for MEMS materials
  • DS/EN 62047-2:2007 Semiconductor devices - Micro-electromechanical devices - Part 2: Tensile testing method of thin film materials
  • DS/EN 62047-18:2013 Semiconductor devices - Micro-electromechanical devices - Part 18: Bend testing methods of thin film materials
  • DS/EN 62047-6:2010 Semiconductor devices - Micro-electromechanical devices - Part 6: Axial fatigue testing methods of thin film materials
  • DS/EN 60749-39:2006 Semiconductor devices - Mechanical and climatic test methods -- Part 39: Measurement of moisture diffusivity and water solubility in organic materials used for semiconductor components
  • DS/EN 62047-14:2012 Semiconductor devices - Micro-electromechanical devices - Part 14: Forming limit measuring method of metallic film materials
  • DS/EN 62047-12:2012 Semiconductor devices - Micro-electromechanical devices - Part 12: Bending fatigue testing method of thin film materials using resonant vibration of MEMS structures
  • DS/EN 62047-11:2013 Semiconductor devices - Micro-electromechanical devices - Part 11: Test method for coefficients of linear thermal expansion of free-standing materials for micro-electromechanical systems

KR-KS, semiconducting material semiconducting material

  • KS C IEC 62047-18-2016 Semiconductor devices ― Micro-electromechanical devices ― Part 18: Bend testing methods of thin film materials
  • KS C IEC 62047-22-2016 Semiconductor devices ― Micro-electromechanical devices ― Part 18: Bend testing methods of thin film materials
  • KS L ISO 10677-2023 Fine ceramics (advanced ceramics, advanced technical ceramics) — Ultraviolet light source for testing semiconducting photocatalytic materials
  • KS L ISO 27447-2023 Fine ceramics (advanced ceramics, advanced technical ceramics) — Test method for antibacterial activity of semiconducting photocatalytic materials
  • KS C IEC 62899-202-2020 Printed electronics — Part 202: Materials — Conductive ink
  • KS L ISO 14605-2023 Fine ceramics (advanced ceramics, advanced technical ceramics) — Light source for testing semiconducting photocatalytic materials used under indoor lighting environment

ES-UNE, semiconducting material semiconducting material

  • UNE-EN 62047-10:2011 Semiconductor devices - Micro-electromechanical devices - Part 10: Micro-pillar compression test for MEMS materials (Endorsed by AENOR in December of 2011.)
  • UNE-EN 62047-18:2013 Semiconductor devices - Micro-electromechanical devices - Part 18: Bend testing methods of thin film materials (Endorsed by AENOR in November of 2013.)
  • UNE-EN 62047-6:2010 Semiconductor devices - Micro-electromechanical devices -- Part 6: Axial fatigue testing methods of thin film materials (Endorsed by AENOR in June of 2010.)
  • UNE-EN 62047-21:2014 Semiconductor devices - Micro-electromechanical devices - Part 21: Test method for Poisson's ratio of thin film MEMS materials (Endorsed by AENOR in November of 2014.)
  • UNE-EN IEC 60749-39:2022 Semiconductor devices - Mechanical and climatic test methods - Part 39: Measurement of moisture diffusivity and water solubility in organic materials used for semiconductor components (Endorsed by Asociación Española de Normalización in March of 2022.)
  • UNE-EN 62047-14:2012 Semiconductor devices - Micro-electromechanical devices - Part 14: Forming limit measuring method of metallic film materials (Endorsed by AENOR in June of 2012.)
  • UNE-EN 301908-11 V3.2.1:2006 Semiconductor devices - Micro-electromechanical devices -- Part 2: Tensile testing method of thin film materials (IEC 62047-2:2006). (Endorsed by AENOR in January of 2007.)
  • UNE-EN 62047-2:2006 Semiconductor devices - Micro-electromechanical devices -- Part 2: Tensile testing method of thin film materials (IEC 62047-2:2006). (Endorsed by AENOR in January of 2007.)
  • UNE-EN 300417-5-1 V1.1.3:2006 Semiconductor devices - Micro-electromechanical devices -- Part 2: Tensile testing method of thin film materials (IEC 62047-2:2006). (Endorsed by AENOR in January of 2007.)
  • UNE-EN 60749-39:2006 Semiconductor devices - Mechanical and climatic test methods -- Part 39: Measurement of moisture diffusivity and water solubility in organic materials used for semiconductor components (IEC 60749-39:2006). (Endorsed by AENOR in November of 2006.)
  • UNE-EN 62047-12:2011 Semiconductor devices - Micro-electromechanical devices - Part 12: Bending fatigue testing method of thin film materials using resonant vibration of MEMS structures (Endorsed by AENOR in February of 2012.)
  • UNE-EN 62047-11:2013 Semiconductor devices - Micro-electromechanical devices - Part 11: Test method for coefficients of linear thermal expansion of free-standing materials for micro-electromechanical systems (Endorsed by AENOR in November of 2013.)

European Committee for Electrotechnical Standardization(CENELEC), semiconducting material semiconducting material

  • EN 62047-18:2013 Semiconductor devices - Micro-electromechanical devices - Part 18: Bend testing methods of thin film materials
  • EN 62047-21:2014 Semiconductor devices - Micro-electromechanical devices - Part 21: Test method for Poisson's ratio of thin film MEMS materials
  • EN 62047-6:2010 Semiconductor devices - Micro-electromechanical devices - Part 6: Axial fatigue testing methods of thin film materials
  • EN IEC 60749-39:2022 Semiconductor devices - Mechanical and climatic test methods - Part 39: Measurement of moisture diffusivity and water solubility in organic materials used for semiconductor components
  • EN 62047-14:2012 Semiconductor devices - Micro-electromechanical devices - Part 14: Forming limit measuring method of metallic film materials
  • EN 60749-39:2006 Semiconductor devices - Mechanical and climatic test methods Part 39: Measurement of moisture diffusivity and water solubility in organic materials used for semiconductor components
  • EN 62047-2:2006 Semiconductor devices Micro-electromechanical devices Part 2: Tensile testing method of thin film materials
  • EN 62047-10:2011 Semiconductor devices - Micro-electromechanical devices - Part 10: Micro-pillar compression test for MEMS materials
  • EN 62047-11:2013 Semiconductor devices - Micro-electromechanical devices - Part 11: Test method for coefficients of linear thermal expansion of free-standing materials for micro-electromechanical systems

机械电子工业部, semiconducting material semiconducting material

  • JB 5781-1991 Technical conditions of profile radiators for power semiconductor devices

ICEA - Insulated Cable Engineers Association Inc., semiconducting material semiconducting material

  • T-32-645-2012 Test Method for Establishing Volume Resistivity Compatibility of Water Blocking Components With Extruded Semiconducting Shield Materials
  • T-32-645-1993 Establishing Compatibility of Sealed Conductor Filler Compounds with Conducting Stress Control Materials

Japanese Industrial Standards Committee (JISC), semiconducting material semiconducting material

  • JIS C 5630-2:2009 Semiconductor devices -- Micro-electromechanical devices-- Part 2: Tensile testing method of thin film materials
  • JIS C 5630-18:2014 Semiconductor devices -- Micro-electromechanical devices -- Part 18: Bend testing methods of thin film materials
  • JIS R 1750:2012 Fine ceramics -- Light source for testing semiconducting photocatalytic materials used under indoor lighting environment
  • JIS C 5630-6:2011 Semiconductor devices -- Micro-electromechanical devices -- Part 6: Axial fatigue testing methods of thin film materials
  • JIS R 1712:2022 Fine ceramics (advanced ceramics, advanced technical ceramics) -- Test method for antialgal activity of semiconducting photocatalytic materials
  • JIS C 5630-12:2014 Semiconductor devices.Micro-electromechanical devices.Part 12: Bending fatigue testing method of thin film materials using resonant vibration of MEMS structures
  • JIS C 2525:1994 Testing method for conductor-resistance and resistivity of metallic resistance materials
  • JIS C 2525:1999 Testing method for conductor-resistance and resistivity of metallic resistance materials

Underwriters Laboratories (UL), semiconducting material semiconducting material

  • UL 779-1990 Electrically conductive floorings
  • UL 779-1995 UL Standard for Safety for Electrically Conductive Floorings Seventh Edition; Reprint with revisions through and including 11/22/2005.
  • UL 779-2011 Electrically conductive floorings
  • UL 2360-2000 Test Methods for Determining the Combustibility Characteristics of Plastics Used in Semi-Conductor Tool Construction

Insulated Cable Engineers Association (ICEA), semiconducting material semiconducting material

  • ICEA T-32-645-2012 TEST METHOD FOR ESTABLISHING VOLUME RESISTIVITY COMPATIBILITY OF WATER BLOCKING COMPONENTS WITH EXTRUDED SEMICONDUCTING SHIELD MATERIALS
  • ICEA T-32-645-1993 Establishing Compatibility of Sealed Conductor Filler Compounds with Conducting Stress Control Materials

VE-FONDONORMA, semiconducting material semiconducting material

CH-SNV, semiconducting material semiconducting material

Lithuanian Standards Office , semiconducting material semiconducting material

  • LST EN 62047-10-2011 Semiconductor devices - Micro-electromechanical devices -- Part 10: Micro-pillar compression test for MEMS materials (IEC 62047-10:2011)
  • LST EN 62047-2-2007 Semiconductor devices - Micro-electromechanical devices - Part 2: Tensile testing method of thin film materials (IEC 62047-2:2006)
  • LST EN 60749-39-2006 Semiconductor devices - Mechanical and climatic test methods - Part 39: Measurement of moisture diffusivity and water solubility in organic materials used for semiconductor components (IEC 60749-39:2006)
  • LST EN 62047-6-2010 Semiconductor devices - Micro-electromechanical devices - Part 6: Axial fatigue testing methods of thin film materials (IEC 62047-6:2009)
  • LST EN 62047-14-2012 Semiconductor devices - Micro-electromechanical devices -- Part 14: Forming limit measuring method of metallic film materials (IEC 62047-14:2012)
  • LST EN 62047-12-2011 Semiconductor devices - Micro-electromechanical devices -- Part 12: Bending fatigue testing method of thin film materials using resonant vibration of MEMS structures (IEC 62047-12:2011)

Standard Association of Australia (SAA), semiconducting material semiconducting material

  • AS/NZS 1660.2.3:1998 Test methods for electric cables, cords and conductors - Insulation, extruded semi-conductive screens and non-metallic sheaths - Methods specific to PVC and halogen free thermoplastic materials
  • AS/NZS 1660.2.2:1998 Test methods for electric cables, cords and conductors - Insulation, extruded semi-conductive screens and non-metallic sheaths - Methods specific to elastomeric, XLPE and XLPVC materials
  • AS/NZS 1660.2.1:1998 Test methods for electric cables, cords and conductors - Insulation, extruded semi-conductive screens and non-metallic sheaths - Methods for general application
  • AS/NZS 1660.2.1/AMD 1:2001 Test methods for electric cables, cords and conductors Method 2.1: Insulation, extruded semi-conductive screens and non-metallic sheaths— Methods for general application; Amendment No.1

CZ-CSN, semiconducting material semiconducting material

European Committee for Standardization (CEN), semiconducting material semiconducting material

  • PD CEN/TS 16599:2014 Photocatalysis - Irradiation conditions for testing photocatalytic properties of semiconducting materials and the measurement of these conditions
  • CEN/TS 16599:2014 Photocatalysis - Irradiation conditions for testing photocatalytic properties of semiconducting materials and the measurement of these conditions

Building Officials and Code Administrators International(U.S.), semiconducting material semiconducting material

Society of Automotive Engineers (SAE), semiconducting material semiconducting material

  • SAE AS6294/3-2019 Requirements for Plastic Encapsulated Discrete Semiconductors in Space Applications
  • SAE AMS3682B-1977 COATING MATERIAL, ELECTRICALLY CONDUCTIVE Silver - Organic Resin
  • SAE AMS3682C-1991 COATING MATERIAL, ELECTRICALLY CONDUCTIVE Silver - Organic Resin
  • SAE AMS3682D-1992 COATING MATERIAL, ELECTRICALLY CONDUCTIVE Silver - Organic Resin

Defense Logistics Agency, semiconducting material semiconducting material

ES-AENOR, semiconducting material semiconducting material

AR-IRAM, semiconducting material semiconducting material

International Organization for Standardization (ISO), semiconducting material semiconducting material

  • ISO 14605:2013 Fine ceramics (advanced ceramics, advanced technical ceramics).Light source for testing semiconducting photocatalytic materials used under indoor lighting environment
  • ISO 13125:2013 Fine ceramics (advanced ceramics, advanced technical ceramics) - Test method for antifungal activity of semiconducting photocatalytic materials
  • ISO 19635:2016 Fine ceramics (advanced ceramics, advanced technical ceramics) - Test method for antialgal activity of semiconducting photocatalytic materials
  • ISO 27447:2019 Fine ceramics (advanced ceramics, advanced technical ceramics) — Test method for antibacterial activity of semiconducting photocatalytic materials
  • ISO 27447:2009 Fine ceramics (advanced ceramics, advanced technical ceramics) - Test method for antibacterial activity of semiconducting photocatalytic materials
  • ISO 10677:2011 Fine ceramics (advanced ceramics, advanced technical ceramics) - Ultraviolet light source for testing semiconducting photocatalytic materials

AT-OVE/ON, semiconducting material semiconducting material

  • OVE EN IEC 60749-39:2020 Semiconductor devices - Mechanical and climatic test methods - Part 39: Measurement of moisture diffusivity and water solubility in organic materials used for semiconductor components (IEC 47/2652/CDV) (english version)

SAE - SAE International, semiconducting material semiconducting material

  • SAE AS6294/4-2019 Requirements for Plastic Encapsulated Discrete Semiconductors in Military and Avionics Applications
  • SAE AMS3682E-1995 COATING MATERIAL@ ELECTRICALLY CONDUCTIVE SILVER - ORGANIC RESIN
  • SAE SSB1-1999 Guidelines for Qualifying and Monitoring Plastic Encapsulated Microcircuits and Semiconductors (Formerly TechAmerica SSB-1)
  • SAE SSB1A-1999 Guidelines for Qualifying and Monitoring Plastic Encapsulated Microcircuits and Semiconductors (Formerly TechAmerica SSB-1-A)

ZA-SANS, semiconducting material semiconducting material

  • SANS 1411-1:2008 Materials of insulated electric cables and flexible cords Part 1: Conductors

IEC - International Electrotechnical Commission, semiconducting material semiconducting material

  • IEC 62047-31:2017 Semiconductor devices – Micro-electromechanical devices – Part 31: Four-point bending test method for interfacial adhesion energy of layered MEMS materials (Edition 1.0)

国家药监局, semiconducting material semiconducting material

  • YY/T 1680-2020 Evaluation of in vivo osteogenic induction properties of allograft prosthetic materials demineralized bone materials

Taiwan Provincial Standard of the People's Republic of China, semiconducting material semiconducting material

  • CNS 8659-1982 Method of Test for Conductor - Resistance and Resistivity of Metallic Resistance Materials
  • CNS 5129-1988 Measuring Methods for Electrical Resistivity and Conductivity of Non-Ferrous Materials
  • CNS 7367-1981 Method of Test for D.C. Resistance or Conductance of Insulating Materials

Professional Standard - Textile, semiconducting material semiconducting material

  • FZ/T 01042-1996 Determination of electrostatic half-life of electrostatic properties of textile materials

IPC - Association Connecting Electronics Industries, semiconducting material semiconducting material

PT-IPQ, semiconducting material semiconducting material

  • NP 159-1963 Matériel pour installations électriques & basse tension. Tubes rigides em material plastiquo pour prctection des conducteurs

工业和信息化部, semiconducting material semiconducting material

  • JC/T 2617-2021 Green factory evaluation guidelines for the wall materials industry

U.S. Air Force, semiconducting material semiconducting material

Government Electronic & Information Technology Association, semiconducting material semiconducting material

  • GEIA SSB-1-C-2000 Guidelines for Using Plastic Encapsulated Microcircuits and Semiconductors in Military, Aerospace and Other Rugged Applications

Professional Standard - Electricity, semiconducting material semiconducting material

  • DL/T 715-2000 Selection guidelines for the metallic material of fossil-fired power plants
  • DL/T 715-2015 Selection guide for the metallic material of fossil power plants

SE-SIS, semiconducting material semiconducting material

  • SIS SS 16 22 27-1986 Rubber and thermoplastic elastomer - Conducting and antistatic materials - Measurement of resistivity

Military Standard of the People's Republic of China-General Armament Department, semiconducting material semiconducting material

  • GJB 10241-2021 Specification for composite launch tubes for solid ballistic missiles

United States Navy, semiconducting material semiconducting material

  • NAVY A-A-59827-2009 TOPSIDE CONDUIT (FLEXIBLE) AND CONDUIT FITTINGS, ELECTRICAL: COMPOSITE BASED (NON-METALLIC)

NZ-SNZ, semiconducting material semiconducting material

  • AS/NZS 1660.2.4:1998 Test Methods for Electric Cables, Cords and Conductors Method 2.4: Insulation, Extruded Semi-Conductive Screens and Non-Metallic Sheaths - Methods Specific to Polyethylene and Polypropylene Materials (Incorporating Amendment 1: 07/2001)




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