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Semi-conductive material thickness
Semi-conductive material thickness, Total:104 items.
In the international standard classification, Semi-conductive material thickness involves: Semiconducting materials, Testing of metals, Surface treatment and coating, Electronic components in general, Printed circuits and boards, Linear and angular measurements, Insulating materials, Vocabularies, Welding, brazing and soldering, Electrical wires and cables, Non-ferrous metals, Non-destructive testing, Semiconductor devices, Electromechanical components for electronic and telecommunications equipment, Materials for aerospace construction, Refractories.
German Institute for Standardization, Semi-conductive material thickness
- DIN 50441-1:1996 Testing of materials for semiconductor technology - Determination of the geometric dimensions of semiconductor wafers - Part 1: Thickness and thickness variation
- DIN 50437:1979 Testing of semi-conductive inorganic materials; measuring the thickness of silicon epitaxial layer thickness by infrared interference method
- DIN 50439:1982 Testing of materials for semiconductor technology; determination of the dopant concentration profile of single crystalline semiconductor material by means of the capacitancevoltage method and mercury contact
- DIN 50455-1:2009-10 Testing of materials for semiconductor technology - Methods for characterizing photoresists - Part 1: Determination of coating thickness with optical methods
- DIN 50441-4:1999 Testing of materials for semiconductor technology - Determination of the geometric dimensions of semiconductor wafers - Part 4: Slice diameter, diamter variation, flat diameter, flat length, flat depth
- DIN 50455-1:2009 Testing of materials for semiconductor technology - Methods for characterizing photoresists - Part 1: Determination of coating thickness with optical methods
- DIN 50448:1998 Testing of materials for semiconductor technology - Contactless determination of the electrical resistivity of semi-insulating semi-conductor slices using a capacitive probe
- DIN 50447:1995 Testing of materials for semiconductor technology - Contactless determination of the electrical sheet resistance of semiconductor layers with the eddy-current method
- DIN 50445:1992 Testing of materials for semiconductor technology; contactless determination of the electrical resistivity of semiconductor slices with the eddy current method; homogeneously doped semiconductor wafers
- DIN EN ISO 2360:2017-12 Non-conductive coatings on non-magnetic electrically conductive base metals - Measurement of coating thickness - Amplitude-sensitive eddy-current method (ISO 2360:2017); German version EN ISO 2360:2017
- DIN 50455-1:1991 Testing of materials for semiconductor technology; methods for characterizing photoresists; determination of coating thickness with optical methods
- DIN 50454-2:1994 Testing of materials for semiconductor technology - Determination of the dislocation etch pits density in monocrystals of III-V-compound semiconductors - Part 2: Indium phosphide
- DIN 50454-3:1994 Testing of materials for semiconductor technology - Determination of the dislocation etch pits density in monocrystals of III-V-compound semiconductors - Part 3: Gallium phosphide
- PAS 1022-2004 Reference procedure for the determination of optical and dielectric material properties and the layer thickness of thin films by ellipsometry
- DIN EN 62047-2:2007-02 Semiconductor devices - Micro-electromechanical devices - Part 2: Tensile testing method of thin film materials (IEC 62047-2:2006); German version EN 62047-2:2006
- DIN EN 62047-10:2012-03 Semiconductor devices - Micro-electromechanical devices - Part 10: Micro-pillar compression test for MEMS materials (IEC 62047-10:2011); German version EN 62047-10:2011
- DIN EN 14571:2005 Metallic coatings on nonmetallic basis materials - Measurement of coating thickness - Microresistivity method; German version EN 14571:2005
- DIN EN 62047-18:2014-04 Semiconductor devices - Micro-electromechanical devices - Part 18: Bend testing methods of thin film materials (IEC 62047-18:2013); German version EN 62047-18:2013
- DIN EN 62047-2:2007 Semiconductor devices - Micro-electromechanical devices - Part 2: Tensile testing method of thin film materials (IEC 62047-2:2006); German version EN 62047-2:2006
- DIN EN 62047-6:2010-07 Semiconductor devices - Micro-electromechanical devices - Part 6: Axial fatigue testing methods of thin film materials (IEC 62047-6:2009); German version EN 62047-6:2010
国家市场监督管理总局、中国国家标准化管理委员会, Semi-conductive material thickness
- GB/T 1550-2018 Test methods for conductivity type of extrinsic semiconducting materials
- GB/T 38783-2020 Method of coating thickness determination for precious metal composites by scanning electron microscope
General Administration of Quality Supervision, Inspection and Quarantine of the People‘s Republic of China, Semi-conductive material thickness
- GB/T 1550-1997 Standard methods for measuring conductivity type of extrinsic semiconducting materials
- GB/T 3048.3-1994 Test methods for determining electrical properties of electric cables and wires.Measurement of volumeresistivity of semi-conducting rubbers and plastics
- GB/T 3389.5-1995 Test methods for the properties of piezoelectric ceramics--Thickness extension vibration mode for disk
- GB/T 3048.3-2007 Test methods for electrical properties of electric cables and wires.Part 3: Test of volume resistivity of semi-conducting rubbers and plastics
- GB/T 3389.6-1997 Test methods for properties of piezoelectric ceramics. Thickness-shear vibration mode for rectangular plate
- GB/T 36133-2018 Refractory materials.Determination of thermal conductivity (Platinum resistance thermometer method)
British Standards Institution (BSI), Semi-conductive material thickness
- BS IEC 62899-203:2018 Printed electronics. Materials. Semiconductor ink
- BS EN 62047-18:2013 Semiconductor devices. Micro-electromechanical devices. Bend testing methods of thin film materials
- BS EN 62047-2:2006 Semiconductor devices - Micro-electromechanical devices - Part 2: Tensile testing method of thin film materials
- 21/30428334 DC BS EN IEC 62899-203. Printed electronics. Part 203. Materials. Semiconductor ink
- BS EN 62047-10:2011 Semiconductor devices. Micro-electromechanical devices. Micro-pillar compression test for MEMS materials
- BS EN 62047-21:2014 Semiconductor devices. Micro-electromechanical devices. Test method for Poisson's ratio of thin film MEMS materials
- BS EN 62047-6:2010 Semiconductor devices - Micro-electromechanical devices - Axial fatigue testing methods of thin film materials
- BS EN 62047-12:2011 Semiconductor devices. Micro-electromechanical devices. Bending fatigue testing method of thin film materials using resonant vibration of MEMS structures
- BS EN 60811-202:2012 Electric and optical fibre cables. Test methods for non-metallic materials. General tests. Measurement of thickness of non-metallic sheath
- BS EN 60811-201:2012+A1:2017 Electric and optical fibre cables. Test methods for non-metallic materials - General tests. Measurement of insulation thickness
- BS EN 14571:2005 Metallic coatings on nonmetallic basis materials - Measurement of coating thickness - Microresistivity method
- BS EN 60811-201:2012 Electric and optical fibre cables. Test methods for non-metallic materials. General tests. Measurement of insulation thickness
- BS EN 62047-14:2012 Semiconductor devices. Micro-electromechanical devices. Forming limit measuring method of metallic film materials
Danish Standards Foundation, Semi-conductive material thickness
- DS/EN ISO 2360:2004 Non-conductive coatings on non-magnetic electrically conductive basis materials - Measurement of coating thickness - Amplitude-sensitive eddy current method
- DS/EN 62047-10:2011 Semiconductor devices - Micro-electromechanical devices - Part 10: Micro-pillar compression test for MEMS materials
- DS/EN 14571:2005 Metallic coatings on nonmetallic basis materials - Measurement of coating thickness - Microresistivity method
- DS/EN 62047-2:2007 Semiconductor devices - Micro-electromechanical devices - Part 2: Tensile testing method of thin film materials
- DS/EN 62047-18:2013 Semiconductor devices - Micro-electromechanical devices - Part 18: Bend testing methods of thin film materials
- DS/ISO 14571:2020 Metallic coatings on non-metallic basis materials – Measurement of coating thickness – Micro-resistivity method
- DS/EN 62047-6:2010 Semiconductor devices - Micro-electromechanical devices - Part 6: Axial fatigue testing methods of thin film materials
Professional Standard - Electron, Semi-conductive material thickness
- SJ/T 11067-1996 Commonly used terminology for semiconductor photoelectric materials and pyroelectric materials in infrared detecting materials
International Electrotechnical Commission (IEC), Semi-conductive material thickness
- IEC 62899-203:2018 Printed electronics - Part 203: Materials - Semiconductor ink
- IEC 62047-2:2006 Semiconductor devices - Micro-electromechanical devices - Part 2: Tensile testing method of thin film materials
- IEC 62047-18:2013 Semiconductor devices - Micro-electromechanical devices - Part 18: Bend testing methods of thin film materials
- IEC 62047-6:2009 Semiconductor devices - Micro-electromechanical devices - Part 6: Axial fatigue testing methods of thin film materials
- IEC 62047-21:2014 Semiconductor devices - Micro-electromechanical devices - Part 21: Test method for Poisson's ratio of thin film MEMS materials
Association Francaise de Normalisation, Semi-conductive material thickness
- NF A91-113:2004 Non-conductive coatings on non-magnetic electrically conductive basis materials - Measurement of coating thickness - Amplitude-sensitive eddy current method.
- NF EN ISO 2360:2017 Revêtements non conducteurs sur matériaux de base non magnétiques conducteurs de l'électricité - Mesurage de l'épaisseur de revêtement - Méthode par courants de Foucault sensible aux variations d'amplitude
- NF A91-127*NF EN 14571:2005 Metallic coatings on non-metallic basis materials - Measurement of coating thickness - Microresistivity method
- NF EN ISO 14571:2022 Revêtements métalliques sur matériaux non-métalliques - Mesurage de l'épaisseur des revêtements - Méthode utilisant la micro-résistivité
- NF EN 62047-2:2006 Dispositifs à semiconducteurs - Dispositifs microélectromécaniques - Partie 2 : méthodes d'essais de traction des matériaux en couche mince
- NF EN 62047-18:2014 Dispositifs à semiconducteurs - Dispositif microélectromécaniques - Partie 18 : méthodes d'essai de flexion des matériaux en couche mince
- NF C96-050-10*NF EN 62047-10:2012 Semiconductor devices - Micro-electromechanical devices - Part 10: micro-pillar compression test for MEMS materials
- NF C96-050-18*NF EN 62047-18:2014 Semiconductor devices - Micro-electromechanical devices - Part 18 : bend testing methods of thin film materials
- NF C96-050-2*NF EN 62047-2:2006 Semiconductor devices - Micro-electromechanical devices - Part 2 : tensile testing methods of thin film materials.
- NF EN 62047-6:2010 Dispositifs à semiconducteurs - Dispositifs microélectromécaniques - Partie 6 : méthodes d'essais de fatigue axiale des matériaux en couche mince
- NF C96-050-21*NF EN 62047-21:2014 Semiconductor devices - Micro-electromechanical devices - Part 21 : test method for Poisson's ratio of thin film MEMS materials
- NF C96-050-6*NF EN 62047-6:2010 Semiconductor devices - Micro-electromechanical devices - Part 6 : axial fatigue testing methods of thin film materials
- NF EN 62047-21:2014 Dispositifs à semiconducteurs - Dispositifs microélectromécaniques - Partie 21 : méthode d'essai relative au coefficient de Poisson des matériaux MEMS en couche mince
Lithuanian Standards Office , Semi-conductive material thickness
- LST EN ISO 2360:2004 Non-conductive coatings on non-magnetic electrically conductive basis materials - Measurement of coating thickness - Amplitude-sensitive eddy current method (ISO 2360:2003)
- LST EN 14571-2005 Metallic coatings on nonmetallic basis materials - Measurement of coating thickness - Microresistivity method
AENOR, Semi-conductive material thickness
- UNE-EN ISO 2360:2004 Non-conductive coatings on non-magnetic electrically conductive basis materials - Measurement of coating thickness - Amplitude-sensitive eddy current method (ISO 2360:2003)
American Society for Testing and Materials (ASTM), Semi-conductive material thickness
- ASTM D374-99 Standard Test Methods for Thickness of Solid Electrical Insulation
- ASTM D374-99(2004) Standard Test Methods for Thickness of Solid Electrical Insulation
- ASTM D374M-99(2005) Standard Test Methods for Thickness of Solid Electrical Insulation (Metric)
- ASTM D374M-13 Standard Test Methods for Thickness of Solid Electrical Insulation (Metric)
- ASTM D6095-06 Standard Test Method for Longitudinal Measurement of Volume Resistivity for Extruded Crosslinked and Thermoplastic Semiconducting Conductor and Insulation Shielding Materials
- ASTM D6095-12 Standard Test Method for Longitudinal Measurement of Volume Resistivity for Extruded Crosslinked and Thermoplastic Semiconducting Conductor and Insulation Shielding Materials
- ASTM E377-08(2020) Standard Practice for Internal Temperature Measurements in Low-Conductivity Materials
- ASTM D6095-99 Standard Test Method for Volume Resistivity for Extruded Crosslinked and Thermoplastic Semiconducting Conductor and Insulation Shielding Materials
- ASTM D6095-05 Standard Test Method for Volume Resistivity for Extruded Crosslinked and Thermoplastic Semiconducting Conductor and Insulation Shielding Materials
American National Standards Institute （ANSI), Semi-conductive material thickness
ES-UNE, Semi-conductive material thickness
- UNE-EN ISO 2360:2018 Non-conductive coatings on non-magnetic electrically conductive base metals - Measurement of coating thickness - Amplitude-sensitive eddy-current method (ISO 2360:2017)
- UNE-EN 62047-10:2011 Semiconductor devices - Micro-electromechanical devices - Part 10: Micro-pillar compression test for MEMS materials (Endorsed by AENOR in December of 2011.)
- UNE-EN 62047-18:2013 Semiconductor devices - Micro-electromechanical devices - Part 18: Bend testing methods of thin film materials (Endorsed by AENOR in November of 2013.)
- UNE-EN 62047-6:2010 Semiconductor devices - Micro-electromechanical devices -- Part 6: Axial fatigue testing methods of thin film materials (Endorsed by AENOR in June of 2010.)
- UNE-EN 62047-21:2014 Semiconductor devices - Micro-electromechanical devices - Part 21: Test method for Poisson's ratio of thin film MEMS materials (Endorsed by AENOR in November of 2014.)
RU-GOST R, Semi-conductive material thickness
Indonesia Standards, Semi-conductive material thickness
- SNI 07-2198-1991 Metallic coating and other organic materials, Definition and thickness measurement
Association of German Mechanical Engineers, Semi-conductive material thickness
Group Standards of the People's Republic of China, Semi-conductive material thickness
- T/CAS 374-2019 Semi-conductive buffer layer material for extruded insulated power cables with rated voltage above 26/35kV
IT-UNI, Semi-conductive material thickness
Korean Agency for Technology and Standards (KATS), Semi-conductive material thickness
- KS C IEC 62047-18:2016 Semiconductor devices ― Micro-electromechanical devices ― Part 18: Bend testing methods of thin film materials
- KS C IEC 62047-22:2016 Semiconductor devices ― Micro-electromechanical devices ― Part 18: Bend testing methods of thin film materials
- KS C IEC 62047-18-2016(2021) Semiconductor devices ― Micro-electromechanical devices ― Part 18: Bend testing methods of thin film materials
- KS C IEC 62047-22-2016(2021) Semiconductor devices ― Micro-electromechanical devices ― Part 18: Bend testing methods of thin film materials
KR-KS, Semi-conductive material thickness
- KS C IEC 62047-18-2016 Semiconductor devices ― Micro-electromechanical devices ― Part 18: Bend testing methods of thin film materials
- KS C IEC 62047-22-2016 Semiconductor devices ― Micro-electromechanical devices ― Part 18: Bend testing methods of thin film materials
European Committee for Standardization (CEN), Semi-conductive material thickness
- EN 14571:2005 Metallic coatings on nonmetallic basis materials - Measurement of coating thickness - Microresistivity method
European Committee for Electrotechnical Standardization（CENELEC）, Semi-conductive material thickness
- EN 62047-18:2013 Semiconductor devices - Micro-electromechanical devices - Part 18: Bend testing methods of thin film materials
- EN 62047-21:2014 Semiconductor devices - Micro-electromechanical devices - Part 21: Test method for Poisson's ratio of thin film MEMS materials
- EN 62047-6:2010 Semiconductor devices - Micro-electromechanical devices - Part 6: Axial fatigue testing methods of thin film materials
Japanese Industrial Standards Committee (JISC), Semi-conductive material thickness
- JIS C 5630-2:2009 Semiconductor devices -- Micro-electromechanical devices-- Part 2: Tensile testing method of thin film materials
- JIS C 5630-18:2014 Semiconductor devices -- Micro-electromechanical devices -- Part 18: Bend testing methods of thin film materials
- JIS C 5630-6:2011 Semiconductor devices -- Micro-electromechanical devices -- Part 6: Axial fatigue testing methods of thin film materials