31.080 半导体分立器件 标准查询与下载

KS C 6521-2008 半导体/LCD工艺涂层评估方法

이 표준은 반도체/LCD 공정 중 식각 또는 화학기상증착(CVD) 공정 장비 내부의 코팅

Method of evaluation for coating components of semiconductor and LCD process

LST EN 62374-2008 半导体器件 栅极介电薄膜的时间相关介电击穿（TDDB）测试（IEC 62374:2007）

Semiconductor devices - Time Dependent Dielectric Breakdown (TDDB) test for gate dielectric films (IEC 62374:2007)

SJ 50033/170-2007 半导体分立器件3DA516型硅微波脉冲功率晶体管详细规范

本规范规定了3DA516型硅微波脉冲功率晶体管（以下简称器件）的详细要求。按GJB 33A-1997中1.3的规定，提供的质量保证等级为普军级、特军级和超特军级，分别用字母JP、JT和JCT表示。

Semiconductor discrete devices Detail specification for type 3DA516 silicon microwave pulse power transistor

SJ 50033/171-2007 半导体分立器件3DA518型硅微波脉冲功率晶体管详细规范

本规范规定了3DA518型硅微波脉冲功率晶体管（以下简称器件）的详细要求。按GJB 33A-1997中1.3的规定，提供的质量保证等级为普军级、特军级和超特军级，分别用字母JP、JT和JCT表示。

Semiconductor discrete devices Detail specification for type 3DA518 silicon microwave pulse power transistor

SJ 50033/173-2007 半导体分立器件3DA520型硅微波脉冲功率晶体管详细规范

本规范规定了3DA520型硅微波脉冲功率晶体管（以下简称器件）的详细要求。按GJB 33A-1997中1.3的规定，提供的质量保证等级为普军级、特军级和超特军级，分别用字母JP、JT和JCT表示。

Semiconductor discrete devices Detail specification for type 3DA520 silicon microwave pulse power transistor

SJ 50033/172-2007 半导体分立器件3DA519型硅微波脉冲功率晶体管详细规范

本规范规定了3DA519型硅微波脉冲功率晶体管（以下简称器件）的详细要求。按GJB 33A-1997中1.3的规定，提供的质量保证等级为普军级、特军级和超特军级，分别用字母JP、JT和JCT表示。

Semiconductor discrete devices Detail specification for type 3DA519 silicon microwave pulse power transistor

SJ 50033/176-2007 半导体分立器件3DA523型硅微波脉冲功率晶体管详细规范

本规范规定了3DA523型硅微波脉冲功率晶体管（以下简称器件）的详细要求。按GJB 33A-1997中1.3的规定，提供的质量保证等级为普军级、特军级和超特军级，分别用字母JP、JT和JCT表示。

Semiconductor discrete devices Detail specification for type 3DA523 silicon microwave pulse power transistor

SJ 50033/174-2007 半导体分立器件3DA521型硅微波脉冲功率晶体管详细规范

本规范规定了3DA521型硅微波脉冲功率晶体管（以下简称器件）的详细要求，按GJB 33A-1997中1.3的规定，提供的质量保证等级为普军级、特军级和超特军级，分别用字母JP、JT和JCT表示。

Semiconductor discrete devices Detail specification for type 3DA521 silicon microwave pulse power transistor

SJ 50033/175-2007 半导体分立器件3DA522型硅微波脉冲功率晶体管详细规范

本规范规定了3DA522型硅微波脉冲功率晶体管（以下简称器件）的详细要求。按GJB 33A-1997中1.3的规定，提供的质量保证等级为普军级、特军级和超特军级，分别用字母JP、JT和JCT表示。

Semiconductro discrete devices Detail specification for type 3DA522 silicon microwave pulse power transistor

JEDEC JESD99B-2007 微电子设备的术语.定义和字母符号

A term used to refer a characteristic to the positive end of the transfer diagram, that is, to the step whose nominal midstep [step] value has the most positive value. (See figures 2.5-3b and 2.5-3c.)

Terms, Definitions, and Letter Symbols for Microelectronic Devices

JEDEC JESD94.01-2007 在测试方法学基础上使用知识的应用特别规范.略微改动JESD94.2004年1月

The solid state component industry manufactures devices that are used in a wide range of applications. Consequently, the accelerated stress portion of the qualification regimen used to assess the reliability performance of these devices should be customized to match the range of end use applications, based upon knowledge of the customer’s end use application conditions, environment, life time requirements, potential failure mechanisms, and associated failure models. The practice of using prescribed reliability stress test conditions, durations, sample sizes, and acceptance criteria may be inappropriate, especially with the ever-evolving applications and material sets found in the solid state component industry. The historically prescribed stress tests may either produce false failures or not accelerate valid failure mechanisms because the stress conditions do not correlate appropriately to the actual use environment.

Application Specific Qualification Using Knowledge Based Test Methodology Minor Revision of JESD94, January 2004

DIN EN 60749-26:2007 半导体器件.机械和气候试验方法.第26部分:静电放电(ESD)灵敏度试验.人体模型(HBM)

Semiconductor devices - Mechanical and climatic test methods - Part 26: Electrostatic discharge (ESD) sensitivity testing - Human body model (HBM) (IEC 60749-26:2006); German version EN 60749-26:2006

DS/EN 62373:2006 金属氧化物、半导体、场效应晶体管（MOSFET）的偏置温度稳定性测试

This standard provides a test procedure for a bias-temperature (BT) stability test of metal-oxide semiconductor, field-effect transistors (MOSFET).

Bias-temperature stability test for metal-oxide, semiconductor, field-effect transistors (MOSFET)

LST EN 62373-2006 金属氧化物、半导体、场效应晶体管（MOSFET）的偏置温度稳定性测试（IEC 62373:2006）

Bias-temperature stability test for metal-oxide, semiconductor, field-effect transistors (MOSFET) (IEC 62373:2006)

JEDEC JESD88B-2006 JEDEC固态技术术语词典

Initially all definitions from the JEDEC and EIA publications* listed in Annex A were considered for inclusion in this dictionary. The following were not included: (1) terms having a specialized meaning only within the context of a particular publication (usually a test method), e.g., “brush: A toothbrush with a handle made up of nonreactive material …”; and (2) concepts where the publication gives only a symbol and a term but no definition. This dictionary, like any dictionary, is primarily intended to define concepts. For an extensive list of symbols and abbreviations with the corresponding terms for many variations (dc, peak, rms, small signal, large signal, etc.), see JEP104, Reference Guide to Letter Symbols for Semiconductor Devices.

JEDEC Dictionary of Terms for Solid State Technology

KS C IEC 60749-34:2006 半导体器件.机械和环境测试方法.第34部分:电力循环

이 시험 방법은 반도체 내부 다이 및 내부 커넥터에서 소비하는 전력의 사이클링으 로 인한

Semiconductor devices-Mechanical and climatic test methods-Part 34:Power cycling

KS C IEC 60749-24:2006 半导体器件.机械和气候试验方法.第24部分:加速抗湿性.无偏HAST

이 규격은 습한 환경에서 비밀봉성 패키지된 반도체 소자들의 신뢰성을 평가하기 위한 목적으로

Semiconductor devices-Mechanical and climatic test methods-Part 24:Accelerated moisture resistance-Unbiased HAST

KS C IEC 60749-24-2006(2016) 半导体器件机械和气候试验方法第24部分:加速防潮无偏试验

Semiconductor devices－Mechanical and climatic test methods－Part 24：Accelerated moisture resistance－Unbiased HAST

KS C IEC 60749-24-2006(2021) 半导体器件机械和气候试验方法第24部分:加速防潮无偏试验

Semiconductor devices－Mechanical and climatic test methods－Part 24：Accelerated moisture resistance－Unbiased HAST

JEDEC JESD22-B113-2006 手持电子产品元件互联可靠性特征的桌子高度交变弯曲测试方法

The Board Level Cyclic Bend Test Method is intended to evaluate and compare the performance of surface mount electronic components in an accelerated test environment for handheld electronic products applications. The purpose is to standardize the test methodology to provide a reproducible performance assessment of surface mounted components while duplicating the failure modes normally observed during product level test. This is not a component qualification test and is not meant to replace any product level test that may be needed to qualify a specific product and assembly.

Board Level Cyclic Bend Test Method for Interconnect Reliability Characterization of Components for Handheld Electronic Products