31.080.01 半导体器分立件综合 标准查询与下载
共找到 1415 条与 半导体器分立件综合 相关的标准，共 95 页
本文件涉及IGBT驱动器的技术术语定义、关键技术指标规范、主要技术指标的试验方法等内容。
IGBT driver test specification
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- 31.080.01
- CCS
- C349
- 发布
- 2021-08-27
- 实施
- 2021-09-02
This part of IEC 63287 gives guidelines for reliability qualification plans of semiconductor integrated circuit products. This document is not intended for military- and space-related applications.
Semiconductor devices - Generic semiconductor qualification guidelines - Part 1: Guidelines for IC reliability qualification
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- 31.080.01
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- 2021-08-01
- 实施
Semiconductor devices -- Part 17: Magnetic and capacitive coupler for basic and reinforced insulation (IEC 60747-17:2020/COR1:2021)
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- 31.080.01
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- 发布
- 2021-07-23
- 实施
- 2021-07-23
IEC 60747-14-10:2019 specifies the terms, definitions, symbols, tests, and performance evaluation methods used to determine the performance characteristics of wearable electrochemical-glucose sensors for practical use. This document is applicable to all wearable electrochemical-glucose sensors for consumers and manufacturers, without any limitations on device technology and size.
Semiconductor devices - Part 14-10: Semiconductor sensors - Performance evaluation methods for wearable glucose sensors
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- 31.080.01
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- 发布
- 2021-07-01
- 实施
IEC 62418:2010 describes a method of metallization stress void test and associated criteria. It is applicable to aluminium (Al) or copper (Cu) metallization.
Semiconductor devices - Metallization stress void test
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- 31.080.01
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- 发布
- 2021-07-01
- 实施
IEC 60191-6-16:2007 gives a glossary of semiconductor sockets for BGA, LGA, FBGA and FLGA. This standard intends to establish definitions and unification of terminology relating to tests and burn-in sockets for BGA, LGA, FBGA and FLGA.
Mechanical standardization of semiconductor devices - Part 6-16: Glossary of semiconductor tests and burn-in sockets for BGA, LGA, FBGA and FLGA
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- 31.080.01
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- 发布
- 2021-07-01
- 实施
IEC 60749-28:2017(E) establishes the procedure for testing, evaluating, and classifying devices and microcircuits according to their susceptibility (sensitivity) to damage or degradation by exposure to a defined field-induced charged device model (CDM) electrostatic discharge (ESD). All packaged semiconductor devices, thin film circuits, surface acoustic wave (SAW) devices, opto-electronic devices, hybrid integrated circuits (HICs), and multi-chip modules (MCMs) containing any of these devices are to be evaluated according to this document. To perform the tests, the devices are assembled into a package similar to that expected in the final application. This CDM document does not apply to socketed discharge model testers. This document describes the field-induced (FI) method. An alternative, the direct contact (DC) method, is described in Annex I. The purpose of this document is to establish a test method that will replicate CDM failures and provide reliable, repeatable CDM ESD test results from tester to tester, regardless of device type. Repeatable data will allow accurate classifications and comparisons of CDM ESD sensitivity levels.
Semiconductor devices - Mechanical and climatic test methods - Part 28: Electrostatic discharge (ESD) sensitivity testing - Charged device model (CDM) - device level
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- 31.080.01
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- 发布
- 2021-07-01
- 实施
IEC 60749-44:2016 establishes a procedure for measuring the single event effects (SEEs) on high density integrated circuit semiconductor devices including data retention capability of semiconductor devices with memory when subjected to atmospheric neutron radiation produced by cosmic rays. The single event effects sensitivity is measured while the device is irradiated in a neutron beam of known flux. This test method can be applied to any type of integrated circuit. NOTE 1 - Semiconductor devices under high voltage stress can be subject to single event effects including SEB, single event burnout and SEGR single event gate rupture, for this subject which is not covered in this document, please refer to IEC 62396-4. NOTE 2 - In addition to the high energy neutrons some devices can have a soft error rate due to low energy (
Semiconductor devices - Mechanical and climatic test methods - Part 44: Neutron beam irradiated single event effect (SEE) test method for semiconductor devices
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- 31.080.01
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- 发布
- 2021-07-01
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IEC 62779-1:2016 defines general requirements for a semiconductor interface used in human body communication (HBC). It includes general and functional specifications of the interface, as well as limiting values and its operating conditions.
Semiconductor devices - Semiconductor interface for human body communication - Part 1: General requirements
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- 31.080.01
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- 发布
- 2021-07-01
- 实施
IEC 62779-2:2016 defines a measurement method on electrical performances of an electrode that composes a semiconductor interface for human body communication (HBC). In the measurement method, a signal transmitter is electrically isolated from a signal receiver, so an isolation condition between the transmitter and receiver is maintained to accurately measure the electrode's performances. This part includes general and functional specifications of the measurement method.
Semiconductor devices - Semiconductor interface for human body communication - Part 2: Characterization of interfacing performances
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- 31.080.01
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- 发布
- 2021-07-01
- 实施
IEC 62779-3:2016 defines a functional type of a semiconductor interface for human body communication (HBC). This part includes the categorization of the interface for HBC according to the contact condition; and performance parameters characterizing the interface of each category.
Semiconductor devices - Semiconductor interface for human body communication - Part 3: Functional type and its operational conditions
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- 31.080.01
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- 发布
- 2021-07-01
- 实施
Semiconductor devices -- Part 17: Magnetic and capacitive coupler for basic and reinforced insulation (IEC 60747-17:2020)
- ICS
- 31.080.01
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- 发布
- 2021-06-16
- 实施
- 2021-06-16
Semiconductor devices - Mechanical and climatic test methods - Part 10: Mechanical shock - device and subassembly (IEC 47/2692/CDV) (english version)
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- 31.080.01
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- 发布
- 2021-06-15
- 实施
- 2021-06-15
Semiconductor devices -- Mechanical and climatic test methods -- Part 20: Resistance of plastic encapsulated SMDs to the combined effect of moisture and soldering heat (IEC 60749-20:2020)
- ICS
- 31.080.01
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- 发布
- 2021-06-14
- 实施
- 2021-06-14
1.1?This practice provides the minimum requirements for nondestructive radiographic examination of semiconductor devices, microelectronic devices, electromagnetic devices, electronic and electrical devices, and the materials used for construction of these items. 1.2?This practi
Standard Practice for Radiographic Examination of Semiconductors and Electronic Components
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- 31.080.01
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- 发布
- 2021-06-01
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本文件规定了二极管扩散片硼扩散液态源配方的术语和定义、试剂和材料、仪器和设备、三氧化二硼/乙二醇乙醚溶液配制、硝酸铝/乙二醇乙醚溶液配制和硼扩散液态源配制等内容。 本文件适用于二极管扩散片硼扩散液态源的配制。
Formula of boron diffusion liquid source for diode diffuser
- ICS
- 31.080.01
- CCS
- C3990
- 发布
- 2021-05-25
- 实施
- 2021-05-26
Semiconductor devices -- Mechanical and climatic test methods -- Part 30: Preconditioning of non-hermetic surface mount devices prior to reliability testing (IEC 60749-30:2020)
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- 31.080.01
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- 发布
- 2021-05-20
- 实施
- 2021-05-20
Semiconductor devices -- Mechanical and climatic test methods -- Part 41: Standard reliability testing methods of non-volatile memory devices (IEC 60749-41:2020)
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- 31.080.01
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- 发布
- 2021-04-20
- 实施
- 2021-04-20
Semiconductor devices--Part 5-5: Optoelectronic devices--Photocouplers (IEC 60747-5-5:2020)
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- 31.080.01
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- 发布
- 2021-04-19
- 实施
- 2021-04-19
Semiconductor devices--Mechanical and climatic test methods--Part 15: Resistance to soldering temperature for through-hole mounted devices (IEC 60749-15:2020)
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- 31.080.01
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- 发布
- 2021-04-14
- 实施
- 2021-04-14
