L40 半导体分立器件综合 标准查询与下载

NF C96-022-38*NF EN 60749-38:2008 半导体装置.机械和气候试验方法.第38部分:带存储的半导体装置用软错误试验

Semiconductor devices - Mechanical and climatic test methods - Part 38 : soft error test method for semiconductor devices with memory.

BS EN 60749-37:2008 半导体装置.机械和气候试验方法.使用加速计的电路板级落锤试验方法

This part of IEC 60749 provides a test method that is intended to evaluate and compare drop performance of surface mount electronic components for handheld electronic product applications in an accelerated test environment, where excessive flexure of a circuit board causes product failure. The purpose is to standardize the test board and test methodology to provide a reproducible assessment of the drop test performance of surface-mounted components while producing the same failure modes normally observed during product level test. The purpose of this standard is to prescribe a standardized test method and reporting procedure. This is not a component qualification test and is not meant to replace any system level drop test that may be needed to qualify a specific handheld electronic product. The standard is not meant to cover the drop test required to simulate shipping and handlingrelated shock of electronic components or PCB assemblies. These requirements are already addressed in test methods such as IEC 60749-10. The method is applicable to both area array and perimeter-leaded surface mounted packages. This test method uses an accelerometer to measure the mechanical shock duration and magnitude applied which is proportional to the stress on a given component mounted on a standard board. The test method described in the future IEC 60749-401 uses strain gauge to measure the strain and strain rate of a board in the vicinity of a component. The detailed specification states which test method is to be used.

Semiconductor devices — Mechanical and climatic test methods — Part 37: Board level drop test method using an accelerometer

EN 60749-38:2008 半导体器件.机械和气候试验方法.第38部分:带存储器的半导体器件用软错误试验法

This part of IEC 60749 establishes a procedure for measuring the soft error susceptibility of semiconductor devices with memory when subjected to energetic particles such as alpha radiation. Two tests are described; an accelerated test using an alpha radiation source and an (unaccelerated) real-time system test where any errors are generated under conditions of naturally occurring radiation which can be alpha or other radiation such as neutron. To completely characterize the soft error capability of an integrated circuit with memory, the device must be tested for broad high energy spectrum and thermal neutrons using additional test methods. This test method may be applied to any type of integrated circuit with memory device.

Semiconductor devices - Mechanical and climatic test methods - Part 38: Soft error test method for semiconductor devices with memory

IEC TR 62258-8:2008 半导体压模产品.第8部分:数据交换用描述(EXPRESS)模型图解

This part of IEC62258, which is a technical report, has been developed to facilitate the production, supply and use of semiconductor die products, including ~ wafers, ~ singulated bare die, ~ die and wafers with attached connection structures, ~ minimally or partially encapsulated die and wafers. This Technical Report contains an EXPRESS model schema that describes the elements needed for data exchange and that will allow the implementation of the requirements of the IEC62258-1, IEC62258-5 and IEC62258-6 standards, as well as providing an exchange structure that is complementary to those defined in IEC 62258-2. It is also complementary to and compatible with the questionnaire in IEC 62258-4.

Semiconductor die products - Part 8: EXPRESS model schema for data exchange

DIN EN 60191-6-13:2008 半导体器件的机械标准化.第6-13部分:小间距球栅阵列和小间距盘栅阵列(FBGA/FLGA)用顶部开口型插座的设计指南(IEC 60191-6-13-2007)

Mechanical standardization of semiconductor devices - Part 6-13: Design guideline of open-top-type sockets for Fine-pitch Ball Grid Array and Fine-pitch Land Grid Array (FBGA/FLGA) (IEC 60191-6-13:2007); German version EN 60191-6-13:2007

JIS C 5630-1:2008 半导体装置.微型机电装置.第1部分:术语和定义

この規格は，製造プロセスを含むマイクロマシン及びMEMSに関する用語について規定する。

Semiconductor devices -- Micro-electromechanical devices -- Part 1: Terms and definitions

BS IEC 60747-4:2008 半导体装置.分立装置.微波二极管和晶体管

This part of IEC 60747 gives requirements for the following categories of discrete devices: – variable capacitance diodes and snap-off diodes (for tuning, up-converter or harmonic multiplication, switching, limiting, phased shift, parametric amplification); – mixer diodes and detector diodes; – avalanche diodes (for direct harmonic generation, amplification); – gunn diodes (for direct harmonic generation); – bipolar transistors (for amplification, oscillation); – field-effect transistors (for amplification, oscillation).

Semiconductor devices - Discrete devices - Microwave diodes and transistors

QJ 10004-2008 宇航用半导体器件总剂量辐射试验方法

本标准规定了采用钴60γ射线对宇航用半导体器件（以下简称器件）进行电离总剂量辐照试验的一般要求和试验程序、方法。 本标准适用于宇航用半导体器件辐照评估试验和验证试验。

Total dose radiation testing method of semiconductor devices for space applications

QJ 10005-2008 宇航用半导体器件重离子单粒子效应试验指南

本指导性技术文件给出了宇航用半导体器件（以下简称器件）重离子辐照引起的单粒子效应的试验指南，包括试验要求、试验方法和试验程序。 本指导性技术文件适用的单粒子效应包括单粒子翻转、单粒子锁定、单粒子扰动等。不包括功率MOS器件的单粒子烧毁。本指导性技术文件中的半导体器件包括半导体集成电路和半导体分立器件。

Test guidelines of single event effects induced by heavy ions of semiconductor devices for space applications

IEC 60749-38:2008 半导体器件.机械和气候试验方法.第38部分:带存储器的半导体器件用软错误试验法

This part of IEC 60749 establishes a procedure for measuring the soft error susceptibility of semiconductor devices with memory when subjected to energetic particles such as alpha radiation. Two tests are described; an accelerated test using an alpha radiation source and an (unaccelerated) real-time system test where any errors are generated under conditions of naturally occurring radiation which can be alpha or other radiation such as neutron. To completely characterize the soft error capability of an integrated circuit with memory, the device must be tested for broad high energy spectrum and thermal neutrons using additional test methods. This test method may be applied to any type of integrated circuit with memory device.

Semiconductor devices - Mechanical and climatic test methods - Part 38: Soft error test method for semiconductor devices with memory

DIN EN 62374:2008 半导体器件.与时间有关的栅极介电薄膜的介质击穿(TDDB)试验

Semiconductor devices - Time Dependent Dielectric Breakdown (TDDB) test for gate dielectric films (IEC 62374:2007); German version EN 62374:2007

BS EN 60191-6-13:2007 半导体装置的机械标准化.第6-13部分:小间距球栅阵列和小间距盘栅阵列(FBGA/FLGA)用顶部开口型插座的设计指南

This part of IEC 60191 gives a design guideline of open-top-type semiconductor sockets for Fine-pitch Ball Grid Array (“FBGA” hereafter) and Fine-pitch Land Grid Array (“FLGA” hereafter). This standard is intended to establish the outline drawings and dimensions of the open-top-type socket out of the test and burn-in sockets applied to FBGA and FLGA.

Mechanical standardization of semiconductor devices — Part 6-13: Design guideline of open-top-type sockets for Fine-pitch Ball Grid Array and Fine-pitch Land Grid Array (FBGA/FLGA)

SJ 50033/176-2007 半导体分立器件3DA523型硅微波脉冲功率晶体管详细规范

本规范规定了3DA523型硅微波脉冲功率晶体管（以下简称器件）的详细要求。按GJB 33A-1997中1.3的规定，提供的质量保证等级为普军级、特军级和超特军级，分别用字母JP、JT和JCT表示。

Semiconductor discrete devices Detail specification for type 3DA523 silicon microwave pulse power transistor

SJ 50033/173-2007 半导体分立器件3DA520型硅微波脉冲功率晶体管详细规范

本规范规定了3DA520型硅微波脉冲功率晶体管（以下简称器件）的详细要求。按GJB 33A-1997中1.3的规定，提供的质量保证等级为普军级、特军级和超特军级，分别用字母JP、JT和JCT表示。

Semiconductor discrete devices Detail specification for type 3DA520 silicon microwave pulse power transistor

SJ 50033/174-2007 半导体分立器件3DA521型硅微波脉冲功率晶体管详细规范

本规范规定了3DA521型硅微波脉冲功率晶体管（以下简称器件）的详细要求，按GJB 33A-1997中1.3的规定，提供的质量保证等级为普军级、特军级和超特军级，分别用字母JP、JT和JCT表示。

Semiconductor discrete devices Detail specification for type 3DA521 silicon microwave pulse power transistor

SJ 50033/175-2007 半导体分立器件3DA522型硅微波脉冲功率晶体管详细规范

本规范规定了3DA522型硅微波脉冲功率晶体管（以下简称器件）的详细要求。按GJB 33A-1997中1.3的规定，提供的质量保证等级为普军级、特军级和超特军级，分别用字母JP、JT和JCT表示。

Semiconductro discrete devices Detail specification for type 3DA522 silicon microwave pulse power transistor

SJ 50033/172-2007 半导体分立器件3DA519型硅微波脉冲功率晶体管详细规范

本规范规定了3DA519型硅微波脉冲功率晶体管（以下简称器件）的详细要求。按GJB 33A-1997中1.3的规定，提供的质量保证等级为普军级、特军级和超特军级，分别用字母JP、JT和JCT表示。

Semiconductor discrete devices Detail specification for type 3DA519 silicon microwave pulse power transistor

SJ 50033/170-2007 半导体分立器件3DA516型硅微波脉冲功率晶体管详细规范

本规范规定了3DA516型硅微波脉冲功率晶体管（以下简称器件）的详细要求。按GJB 33A-1997中1.3的规定，提供的质量保证等级为普军级、特军级和超特军级，分别用字母JP、JT和JCT表示。

Semiconductor discrete devices Detail specification for type 3DA516 silicon microwave pulse power transistor

SJ 50033/171-2007 半导体分立器件3DA518型硅微波脉冲功率晶体管详细规范

本规范规定了3DA518型硅微波脉冲功率晶体管（以下简称器件）的详细要求。按GJB 33A-1997中1.3的规定，提供的质量保证等级为普军级、特军级和超特军级，分别用字母JP、JT和JCT表示。

Semiconductor discrete devices Detail specification for type 3DA518 silicon microwave pulse power transistor

IEC PAS 60191-6-18:2008 半导体装置的机械标准化.第6-18部分:表面安装的半导体器件封装外形图绘制的一般规则.焊球网格阵列(BGA)的设计指南

This PAS provides common outline drawings and dimensions for all types of structures and composed materials of ball grid array (hereinafter called BGA), whose terminal pitch is one millimetre or larger and whose package body outline is square.

Mechanical standardization of semiconductor devices - Part 6-18: General rules for the preparation of outline drawings of surface mounted semiconductor device packages - Design guide for ball grid array (BGA)