共找到 223 条与 半导体二极管 相关的标准,共 15 页
本空白详细规范是半导体器件的一系列空白详细规范之一,并应与下列国家标准一起使用。
Semiconductor devices Discrete devices Part 4-1: Microwave diodes and transistors-Microwave field effect transistors Blank detail specification
本空白详细规范是半导体器件的一系列空白详细规范之一,并应与下列国家标准和IEC标准一起使用。 GB/T12560--1999半导体器件分立器件分规范(idt IEC 60747—11:1985) IEC 60747—10(QC 700000):1991 半导体器件第l0部分分立器件和集成电路总规范
Semiconductor devices discrete devices Part 3-2: Signal (including switching) and regulator diodes blank detail specification for voltage-regulator diodes and voltage-reference diodes (excluding temperature-compensated precision reference diodes)
本空白详细规范是半导体器件的一系列空白详细规范之一,并应与下列国家标准一起使用。 GB/T 4589.1-1989 半导体器件 分立器件和集成电路总规范(idt IEC 747-10:1984) GB/T 12560-1999 半导体器件 分立器件分规范(idt IEC 747-11:1996)
Semiconductor devices Discrete devices Part 3: Signal(including switching) and regulator diodes Section One--Blank detail specification for signal diodes,switching diodes and controlled-avalanche diodes
半导体器件分立器件和集成电路 第2部分:整流二极管
Semiconductor devices. Discrete devices and integrated circuits. Part 2: Rectifier diodes
本空白详细规范规定了制定“变容二极管”详细规范的基本原则,制定该范围内的所有详细规范应与本空白详细规范一致。
Blank detail specification for variable capacitance diodes
本空白详细规范规定了制定“微波检波、混频二极管”详细规范的基本原则,制定该范围内的所有详细规范应与本空白详细规范一致。
Blank detail specification for mircowave detectors and mixer diodes
本空白详细规范规定了制定体效应二极管详细规范的基本原则,制定该范围内的所有详细规范应与本空白详细规范一致。
Blank detail specification for Gunn diodes
本标准规定了用栅控和非栅控二极管的电压-电容关系测定硅外延层中净载流了浓度的原理、仪器与材料、样品制备、测量步骤和数据处理。 本标准适用于外延层厚度不小于某一最小厚度值(见附录B)的相同或相反导电类型衬底上的n型或p型外延层,也适用于体材料。
Standard test method for net carrier density in silicon eqitaxial layers by voltage-capacitance of gated and ungated diodes
本空白详细规范规定了制订“电流调整和电流基准二极管”详细规范的基本原则,制订该范围内的所有详细规范应与本空白详细规范一致。
Blank detail specification for current-regulator and current-reference diodes
本空白详细规范规定了制订“单结晶体管”详细规范的基本原则,制订该范围内的所有详细规范应与本空白详细规范一致。
Blank detail specification for unijunction transistors
本空白详细规范规定了制订《PIN二极管》详细规范的基本原则,制订该范围内的所有详细规范应与本空白详细规范一致。
Blank detail specification for PIN diodes
Detailed specification for electronic components 2CW412~473 silicon voltage adjustment diodes
Detail specification for electronic components 2CW380~411 silicon voltage adjusting diodes (available for certification)
Detail specification for electronic components 2CC21, 2CC26 type silicon tuning varactor diodes (available for certification)
Detailed specification for electronic components 2CC25, 2CC30 type silicon band switching varactor diodes (available for certification)
本标准适用于各种微波二极管的参数测试。 在引用本标准时,有关的具体要求应在相应的详细规范中加以规定。
Measuring methods for microwave diodes
Semiconductor devices - Discrete devices - Part 4: Microwave diodes and transistors
Semiconductor devices. Discrete devices: Signal, switching and regulator diodes
This part of IEC 60747 gives the requirements for the following devices: ?C signal diodes (excluding diodes designed to operate at frequencies above several hundred MHz); ?C switching diodes (excluding high power rectifier diodes); ?C voltage-regulator diodes; ?C voltage-reference diodes; ?C current-regulator diodes.
Semiconductor devices - Part 3: Discrete devices: Signal, switching and regulator diodes
Organic light emitting diode (OLED) displays - Part 6-3 : measuring methods of image quality
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