L43 半导体整流器件 标准查询与下载

JEDEC JESD82-14A-2006 SSTUB32868的定义 DDR2 RDIMM应用软件28位1:2注册缓冲器加奇偶校验

This standard defines standard specifications of dc interface parameters, switching parameters, and test loading for definition of the SSTUB32868 registered buffer with parity test for DDR2 RDIMM applications. SSTU32S2868 denotes a single-die implementation and SSTU32D868 denotes a dual-die implementation.

Definition of the SSTUB32868 1.8 V Configurable Registered Buffer with Parity for DDR2 RDIMM Applications

JEDEC JESD49A-2005 半导体压模制品采购要求包括KGD

This standard provides guidelines and requirements for die products used in other than conventionally packaged microcircuit or discrete formats. The die described herein are intended to be high quality, reliable bare die, for use in a variety of userdefined applications (e.g., multi-chip modules (MCM), System in a Package (SiP), memory cards, etc.) While this standard allows negotiation between supplier and user to establish specific requirements for performance, quality and reliability, it is important to recognize, in the case of military and aerospace applications, the minimum requirements described in relevant military specifications.

Procurement Standard for Semiconductor Die Products Including Known Good Die (KGD)

JEDEC JESD82-13A-2005 SSTVN16859 2.5-2.6V 13位到26位 SSTL_2的定义 PC1600, PC2100, PC2700和PC3200 DDR DIMM应用软件的注册缓冲器

This standard defines standard specifications of dc interface parameters, switching parameters, and test loading for definition of the SSTVN16859 13-bit to 26-bit SSTL_2 registered buffer for PC1600, PC2100, PC2700 and PC3200 DDR DIMM applications. The SSTVN16859 is a speed upgrade of the SSTV16859 (JESD82-4) for use in PC3200 DDR DIMMs. It is fully backward compatible with SSTV16859 for all speed grades.

Definition of the SSTVN16859 2.5-2.6 V 13-Bit to 26-Bit SSTL_2 Registered Buffer for PC1600, PC2100, PC2700 and PC3200 DDR DIMM Applications

NF C96-015:2005 半导体分立器件.第15部分:绝缘电力半导体器件

Discrete semiconductor devices - Part 15: isolated power semiconductor devices

JEDEC JESD82-17-2005 SSTUA32S868和SSTUA32D868的定义 2R x 4 DDR2 RDIMM应用软件的注册缓冲器加奇偶校验

This standard defines standard specifications of dc interface parameters, switching parameters, and test loading for definition of the SSTUA32S868 and SSTUA32D868 registered buffer with parity test for DDR2 RDIMM applications.

Definition of the SSTUA32S868 and SSTUA32D868 Registered Buffer with Parity for 2R x 4 DDR2 RDIMM Applications

JEDEC JESD60A-2004 P路MOSFET热载波的测量规程 导致DC压下的退化

Hot-carrier-induced change of MOSFET parameters over time is an important reliability concern in modern microcircuits. High-energy carriers, also called hot carriers, are generated in the MOSFET by the large channel electric fields near the drain region. These hot carriers transfer energy to the lattice through phonon emission and break bonds at the Si/SiO2 interface. The electric fields accelerate locally the carriers to effective temperatures well above the lattice temperature. Carriers also are injected into the SiO2 and can be trapped there. The trapping or bond breaking creates oxide charge and interface traps that affect the channel carrier mobility and the effective channel potential.

A Procedure for Measuring P-Channel MOSFET Hot-Carrier- Induced Degradation Under DC Stress

JEDEC JESD82-6A-2004 SSTV32852 2.5V 24位和48位 SSTL_2的定义 1U管组 DDR DIMM应用软件的注册缓冲器

This standard defines standard specifications of dc interface parameters, switching parameters, and test loading for definition of the 32852 24-bit to 48-bit SSTL_2 registered buffer for stacked DDR DIMM applications.

Definition of the SSTV32852 2.5-V 24-Bit to 48-Bit SSTL_2 Registered Buffer for 1U Stacked DDR DIMM Applications

JEDEC JESD82-7A-2004 SSTU32866的定义 DDR2 RDIMM应用软件28位1:2注册缓冲器

This standard defines standard specifications of dc interface parameters, switching parameters, and test loading for definition of the SSTU32864 configurable registered buffer for DDR2 RDIMM applications.

Definition of the SSTU32864 1.8-V Configurable Registered Buffer for DDR2 RDIMM Applications

JEDEC JESD82-3B-2004 PC1600,PC2700,和PC3200 DDR DIMM应用软件的注册缓冲器 SSTVN16875 2.5-2.6 V 14位 SSTL_2的定义

This standard defines standard specifications of dc interface parameters, switching parameters, and test loading for definition of the SSTVN16857 14-bit SSTL_2 registered buffer for PC1600, PC2100, PC2700 and PC3200 DDR DIMM applications.

Definition of the SSTVN16857 2.5-2.6 V 14-Bit SSTL_2 Registered Buffer for PC1600, PC2100, PC2700, and PC3200 DDR DIMM Applications

JEDEC JESD82-4B-2003 管组DDR DIMM应用程序的注册缓冲器 SSTV16859 2.5 V 13位和26位 SSTL_2的定义

This standard defines standard specifications of dc interface parameters, switching parameters, and test loading for definition of the SSTV16859 13-bit to 26-bit SSTL_2 registered buffer for stacked DDR DIMM applications.

Definition of the SSTV16859 2.5 V 13-Bit to 26-Bit SSTL_2 Registered Buffer for Stacked DDR DIMM Applications

JEDEC JEP104C.01-2003 半导体设备的字母符号的参考指南

Symbols are listed in the following order: Roman letters, Greek letters, numerals, and mathematical symbols. Subscripting and punctuation marks are ignored for the purposes of alphabetizing. Uppercase letters precede lowercase letters for symbols that are otherwise identical.

Reference Guide to Letter Symbols for Semiconductor Devices

IEC 60700-1:2003 高压直流(HVDC)电力传输用可控硅阀.第1部分:电气试验

Applies to thyristor valves with metal oxide surge arresters directly connected between the valve terminals, for use in a line commuted commutated converter for high voltage d.c. power transmission or as part of a back-to-back link. Retricted to electric

Thyristor valves for high voltage direct current (HVDC) power transmission - Part 1: Electrical testing

IEC 60700-1:1998/AMD1:2003 高压直流(HVDC)电力传输用可控硅阀门.第1部分:电气试验.修改件1

This is Amendment 1 to IEC 60700-1-1998 (Thyristor valves for high voltage direct current (HVDC) power transmission -Part 1: Electrical testing)

Thyristor valves for high voltage direct current (HVDC) power transmission - Part 1: Electrical testing; Amendment 1

JEDEC JEP140-2002 半导体珠状温度测试

This method specifies procedures to determine the temperature of a component or its solder joint over time as it is exposed to temperature gradients due to testing or processing. It defines appropriate thermometry sensors, tools, and attachment methods for temperature measurement of semiconductor packages in the applications mentioned in the Foreword..

Beaded Thermocouple Temperature Measurement of Semiconductor Packages

NF C96-002:2001 半导体器件.分立器件和集成电路.第2部分:整流二极管

Semiconductor devices - Discrete devices and integrated circuits - Part 2 : rectifier diodes.

DIN EN 60146-2:2001 半导体变流器.第2部分:包括直流变流器的自整流半导体变流器

Semiconductor convertors - Part 2: Self-commutated semiconductor convertors including direct d.c. convertors (IEC 60146-2:1999); German version EN 60146-2:2000

DIN IEC 60747-2:2001 半导体器件.分立器件和集成电路.第2部分:整流二极管

Semiconductor devices - Discrete devices and integrated circuits - Part 2: Rectifier diodes (IEC 60747-2:2000)

SJ 20787-2000 半导体桥式整流器热阻测试方法

本标准规定了半导体桥式整流器稳态热阻的测试方法。 本标准适用于单相和三相半导体桥式整流器稳态热阻的测试。

Measurment method for thermal resistance of semiconductor bridge rectifieres

BS IEC 60747-2:2000 分立的半导体器件器件和集成电路.整流二极管

To be read in conjunction with IEC 60747-1

Discrete semiconductor devices and integrated circuits - Rectifier diodes

IEC 60747-4-2:2000 半导体器件 分立器件 第4-2部分:微波二极管和晶体管 集成电路微波放大器 空白详细规范

Semiconductor devices - Discrete devices - Part 4-2: Microwave diodes and transistors - Integrated-circuit microwave amplifiers - Blank detail specification