L56 半导体集成电路 标准查询与下载

IEC 61967-6:2002/COR1:2010 集成电路.150 kHz-1 GHz电磁辐射的测量.第6部分:传导放射测量.磁探测器法

Integrated circuits - Measurement of electromagnetic emissions, 150 kHz to 1 GHz - Part 6: Measurement of conducted emissions - Magnetic probe method

BS EN 62417:2010 半导体器件 金属氧化物场效应晶体管(MOSFETs)用迁移离子试验

This present standard provides a wafer level test procedure to determine the amount of positive mobile charge in oxide layers in metal-oxide semiconductor field effect transistors. . It is applicable to both active and parasitic field effect transistors. The mobile charge can cause degradation of microelectronic devices, e.g. by shifting the threshold voltage of MOSFETs or by inversion of the base in bipolar transistors.

Semiconductor devices - Mobile ion tests for metal-oxide semiconductor field effect transistors (MOSFETs)

IEC TR 61967-1-1:2010 集成电路.电磁辐射管理.第1部分:定义和一般条件.近似场扫描数据交换格式

This part of IEC 61967 provides guidance for exchanging data generated by near-field scan measurements. The described exchange format could also be used for near-field scan data generated by simulation software. It should be noted that, although it has been developed for near-field scan, its use is not restricted to this application. The exchange format can be applied to emission, immunity and impulse immunity near-field scan data in the frequency and time domains. The scope of this technical report includes neither the methods used for the measurements or simulations, nor the software and algorithms used for generating the exchange file or for processing or viewing the data contained therein.

Integrated circuits - Measurement of electromagnetic emissions - Part 1: General conditions and definitions - Near-field scan data exchange format

DIN EN 62433-2:2010 EMC IC建模.第2部分:EMI动作模拟用集成电路模型.传导发射建模(ICEM-CE)

EMC IC modelling - Part 2: Models of integrated circuits for EMI behavioural simulation - Conducted emissions modelling (ICEM-CE) (IEC 62433-2:2008); German version EN 62433-2:2010

IEC 62417:2010 半导体器件.金属氧化物半导体场效应管(MOSFETs)移动离子试验

This present standard provides a wafer level test procedure to determine the amount of positive mobile charge in oxide layers in metal-oxide semiconductor field effect transistors. . It is applicable to both active and parasitic field effect transistors. The mobile charge can cause degradation of microelectronic devices, e.g. by shifting the threshold voltage of MOSFETs or by inversion of the base in bipolar transistors.

Semiconductor devices - Mobile ion tests for metal-oxide semiconductor field effect transistors (MOSFETs)

IEC 62132-2:2010 集成电路.电磁抗扰度测量.第2部分:辐射抗干扰的测定.横电磁波传输室和宽带横电磁波传输室方法

This International Standard specifies a method for measuring the immunity of an integrated circuit (IC) to radio frequency (RF) radiated electromagnetic disturbances. The frequency range of this method is from 150 kHz to 1 GHz, or as limited by the characteristics of the TEM cell.

Integrated circuits - Measurement of electromagnetic immunity - Part 2: Measurement of radiated immunity - TEM cell and wideband TEM cell method

BS EN 62433-2:2010 EMC IC建模.EMI动作模拟用集成电路模型.传导发射建模(ICEM-CE)

This part of IEC 62433 specifies macro-models for ICs to simulate conducted electromagnetic emissions on a printed circuit board. The model is commonly called Integrated Circuit Emission Model - Conducted Emission (ICEM-CE). The ICEM-CE model can also be used for modelling an IC-die, a functional block and an Intellectual Property block (IP). The ICEM-CE model can be used to model both digital and analogue ICs.

EMC IC modelling - Models of integrated circuits for EMI behavioural simulation - Conducted emissions modelling (ICEM-CE)

ASTM F744M-10 数字集成电路扰乱的剂量速率阙值测定的标准试验方法【公制单位】

Digital integrated circuits are specified to operate with their inputs and outputs in either a logical 1 or a logical 0 state. The occurrence of signals having voltage levels not meeting the specifications of either of these levels (an upset condition) may cause the generation and propagation of erroneous data in a digital system. Knowledge of the radiation dose rate that causes upset in digital integrated circuits is essential for the design, production, and maintenance of electronic systems that are required to operate in the presence of pulsed radiation environments.1.1 This test method covers the measurement of the threshold level of radiation dose rate that causes upset in digital integrated circuits under static operating conditions. The radiation source is either a flash X-ray machine (FXR) or an electron linear accelerator (LINAC). 1.2 The precision of the measurement depends on the homogeneity of the radiation field and on the precision of the radiation dosimetry and the recording instrumentation. 1.3 The test may be destructive either for further tests or for purposes other than this test if the integrated circuit being tested absorbs a total radiation dose exceeding some predetermined level. Because this level depends both on the kind of integrated circuit and on the application, a specific value must be agreed upon by the parties to the test (6.8). 1.4 Setup, calibration, and test circuit evaluation procedures are included in this test method. 1.5 Procedures for lot qualification and sampling are not included in this test method. 1.6 Because of the variability of the response of different device types, the initial dose rate for any specific test is not given in this test method but must be agreed upon by the parties to the test. 1.7 The values stated in SI units are to be regarded as standard. No other units of measurement are included in this standard. 1.8 This standard does not purport to address all of the safety concerns, if any, associated with its use. It is the responsibility of the user of this standard to establish appropriate safety and health practices and determine the applicability of regulatory limitations prior to use.

Standard Test Method for Measuring Dose Rate Threshold for Upset of Digital Integrated Circuits [Metric]

ASTM F773M-10 测定线性集成电路的剂量率响应的规范【公制单位】

There are many kinds of linear integrated circuits. Any given linear integrated circuit may be used in a variety of ways and under various operating conditions within the limits of performance specified by the manufacturer. The procedures of this practice provide a standardized way to measure the dose-rate response of a linear integrated circuit, under operating conditions similar to those of the intended application, when the circuit is exposed to pulsed ionizing radiation. Knowledge of the responses of linear integrated circuits to radiation pulses is essential for the design, production, and maintenance of electronic systems that are required to operate in the presence of pulsed radiation environments.1.1 This practice covers the measurement of the response of linear integrated circuits, under given operating conditions, to pulsed ionizing radiation. The response may be either transient or more lasting, such as latchup. The radiation source is either a flash X-ray machine (FXR) or an electron linear accelerator (LINAC). 1.2 The precision of the measurement depends on the homogeneity of the radiation field and on the precision of the radiation dosimetry and the recording instrumentation. 1.3 The test may be considered to be destructive either for further tests or for other purposes if the total radiation ionizing dose exceeds some predetermined level or if the part should latch up. Because this level depends both on the kind of integrated circuit and on the application, a specific value must be agreed upon by the parties to the test. (See 6.10.) 1.4 Setup, calibration, and test circuit evaluation procedures are included in this practice. 1.5 Procedures for lot qualification and sampling are not included in this practice. 1.6 Because response varies with different device types, the dose rate range for any specific test is not given in this practice but must be agreed upon by the parties to the test. 1.7 The values stated in SI units are to be regarded as standard. No other units of measurement are included in this standard. 1.8 This standard does not purport to address all of the safety concerns, if any, associated with its use. It is the responsibility of the user of this standard to establish appropriate safety and health practices and determine the applicability of regulatory limitations prior to use.

Practice for Measuring Dose Rate Response of Linear Integrated Circuits [Metric]

ANSI/VITA 46.9-2010 3U和6U VPX模块标准上PMC/XMC后部的I/O纤维信号映像

This VITA 46 (VPX) subsidiary standard defines PMC or XMC mezzanine rear I/O pin mappings to VITA 46.0 plug-in module backplane connectors.

PMC/XMC Rear I/O Fabric Signal Mapping on 3U and 6U VPX Modules Standard

ANSI/IEEE 1241:2010 模拟-数字转换器的术语和试验方法标准

The material presented in this standard is intended to provide common terminology and test methods for the testing and evaluation of analog-to-digital converters (ADCs). This standard considers only those ADCs whose output values have discrete values at discrete times, i.e. they are quantized and sampled. In general, this quantization is assumed to be nominally uniform (the input-output transfer curve is approximately a straight line) as discussed further in Subclause 1.3, Analog-to-digital converter background, and the sampling is assumed to be at a nominally uniform rate.

Standard for Terminology and Test Methods for Analog-to-Digital Converters

KS B ISO 10303-34:2009 工业自动化系统和集成.产品数据表示和交换.第34部分:一致性检验方法和框架:应用协议实现的抽象检验方法

이 표준은 KS B ISO 10303 응용 프로토콜 구현의 적합성 시험을 위한 가상 시험방

Industrial automation systems and integration-Product data representation and exchange-Part 34:Conformance testing methodology and framework-Abstract test methods for application protocol implementations

KS B ISO 10303-324:2009 工业自动化系统和集成.产品数据表示和交换.第324部分:抽象试验组.用机械特性的加工设计的机械产品定义

이 표준은 KS B ISO 10303-224의 구현에 대한 적합성 시험에 사용될 가상 시험

Industrial automation systems and integration-Product data representation and exchange-Part 324:Abstract test suite:Mechanical product definition for process plans using machining features

DIN EN 60747-16-3:2009 半导体装置.第16-3部分:微波集成电路.频率转换器(IEC 60747-16-3:2002 + A1;2009),德文版本 EN 60747-16-3:2002 + A1:2009

Semiconductor devices - Part 16-3: Microwave integrated circuits - Frequency converters (IEC 60747-16-3:2002 + A1:2009); German version EN 60747-16-3:2002 + A1:2009

IEC 60747-16-3:2002/AMD1:2009 半导体装置.第16-3部分:微波集成电路.频率转换器.修改件1

Semiconductor devices - Part 16-3: Microwave integrated circuits - Frequency converters; Amendment 1

IEEE 1481-2009 集成电路(IC)开放性库结构(OLA)

Integrated Circuit (IC) Open Library Architecture (OLA) (IEEE Computer Society)

ANSI/IEEE 1481:2009 集成电路(IC)开放程序库架构(OLA)标准

This standard covers delay and power calculation for integrated circuit design with support for modeling logical behavior and signal integrity.

Standard for Integrated Circuit (IC) Open Library Architecture (OLA)

ANSI/VITA 46.10-2009 VPX后部转换模块

Define a rear transition module (RTM) fro ANSI/VITA 46.0, VPX applications.

Rear Transition Module for VPX

KS B ISO 10303-512:2008 工业自动化系统和集成.产品数据表示和交换.第512部分:应用解释构造:表面边界表达

이 표준은 다음 요구사항을 만족시키기 위해 기본 자원의 해석을 명세한다.a) 평면과 묵

Industrial automation systems and integration－Product data representation and exchange－Part 512：Application interpreted construct：Faceted boundary representation

DIN EN 61967-6:2008 集成电路.频率为150kHz～1GHz的电磁辐射的测量.第6部分:传导辐射的测量.探磁针方法

Integrated circuits - Measurement of electromagnetic emissions, 150 kHz to 1 GHz - Part 6: Measurement of conducted emissions - Magnetic probe method (IEC 61967-6:2002 + A1:2008); German version EN 61967-6:2002 + A1:2008