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Thulium Oxide Transistor

Thulium Oxide Transistor, Total:394 items.

In the international standard classification, Thulium Oxide Transistor involves: Non-ferrous metals, Analytical chemistry, Semiconducting materials, Semiconductor devices, Non-metalliferous minerals, Electrical and electronic testing, Ceramics, Products of the chemical industry, Metalliferous minerals, Fibre optic communications, Nuclear energy engineering, Radiation measurements, Insulating fluids, Electricity. Magnetism. Electrical and magnetic measurements, Radiocommunications, Integrated circuits. Microelectronics, Gas and steam turbines. Steam engines, Fuels, Electrical engineering in general, Valves, Testing of metals, Soil quality. Pedology, Air quality, Explosion protection, Mining equipment, Plastics, Welding, brazing and soldering, Waxes, bituminous materials and other petroleum products, Construction materials, Power stations in general.


European Committee for Electrotechnical Standardization（CENELEC）, Thulium Oxide Transistor

  • EN 62417:2010 Semiconductor devices - Mobile ion tests for metal-oxide semiconductor field effect transistors (MOSFETs)
  • EN 62373:2006 Bias-temperature stability test for metal-oxide, semiconductor, field-effect transistors (MOSFET)

General Administration of Quality Supervision, Inspection and Quarantine of the People‘s Republic of China, Thulium Oxide Transistor

  • GB/T 18115.1-2000 Lanthanum oxide-Determination of cerium oxide,praseodymium oxide,neodymium oxide,samarium oxide,europium oxide,gadolinium oxide,terbium oxide,dysprosium oxide,holmium oxide,erbium oxide,thulium oxide,ytterbium oxide,lutetium oxide and yttrium oxide conten
  • GB/T 18115.2-2000 Cerium oxide-Determination of lanthanum oxide,praseodymium oxide,neodymium oxide,samarium,oxide,europium oxide,gadolinium oxide,terbium oxide,dysprosium oxide,holmium oxide,erbium oxide,thulium oxide,ytterbium oxide,lutetium oxide and yttrium oxide conten
  • GB/T 18115.5-2000 Samarium oxide-Determination of lanthanum oxide,cerium oxide,praseodymium oxide,neodymium oxide,europium oxide,gadolinium oxide,terbium oxide,dysprosium oxide,holmium oxide,erbium oxide,thulium oxide,ytterbium oxide,lutetium oxide and yttrium oxide conten
  • GB/T 8762.8-2000 Europium oxide-Determination of lanthanum oxide,cerium oxide,praseodymium oxide,neodymium oxide,samarium oxide,gadolinium oxide,terbium oxide,dysprosium oxide,holmium oxide,erbium oxide,thulium oxide,ytterbium oxide,lutetium oxide and yttrium oxide conten
  • GB/T 18115.6-2000 Gadolinium oxide-Determination of lanthanum oxide,cerium oxide,praseodymium oxide,neodymium oxide,samarium oxide europium oxide,terbium oxide,dysprosium oxide,holmium oxide,erbium oxide,thulium oxide,ytterbium oxide,lutetium oxide and yttrium oxide conten
  • GB/T 18115.7-2000 Terbium oxide-Determination of lanthanum oxide,cerium oxide,praseodymium oxide,neodymium oxide,samarium oxide,europium oxide,gadolinium oxide,dysprosium oxide,holmium oxide,erbium oxide,thulium oxide,ytterbium oxide,lutetium oxide and yttrium oxide conten
  • GB/T 18115.9-2000 Holmium oxide-Determination of lanthanum oxide,cerium oxide,praseodymium oxide,neodymium oxide,samarium oxide,europium oxide,gadolinium oxide,terbium oxide,dysprosium oxide,erbium oxide,thulium oxide,ytterbium oxide,lutetium oxide and yttrium oxide conten
  • GB/T 18115.8-2000 Dysprosium oxide-Determination of lanthanum oxide,ceriurm oxide,praseodymium oxide,neodymium oxide,samarium oxide,eueropium oxide,gadolinium oxide,terbium oxide,holmium oxide,erbium oxide,thulium oxide,ytterbium oxide,luteclum oxide and yttrium oxide cont
  • GB/T 18115.4-2000 Neodynium oxide-Determination of lanthanum oxide,cerium oxide,praseodymium oxide,samarium oxide,europium oxide,gadolinium oxide,terbium oxide,dysprosium oxide,holmium oxide,erbium oxide,thulium oxide,ytterbium oxide,lutetium oxide and yttrium oxide conten
  • GB/T 18115.10-2000 Erbium oxide-Determination of lanthanum oxide,cerium oxide,praseodymium oxide,neodymium oxide,samarium oxide,europium oxide,gadolinium oxide,terbium oxide,dysprosium oxide,holmium oxide,thulium oxide,ytterbium oxide,lutetium oxide and yttrium oxide conten
  • GB/T 18115.3-2000 Praseodymium oxide-Determination of lanthanum oxide,cerium oxide,neodymium oxide,samarium oxide,europium oxide,gadolinium oxide,terbium oxide, dysprosium oxide,holmium oxide,erbium oxide,thulium oxide,ytterbium oxide,lutetium oxide and yttrium oxide conte
  • GB/T 18116.1-2000 Yttrium-europium oxide-Determination of lanthanum oxide,cerium oxide,praseodymium oxide,neodymium oxide,samarium oxide,gadolinium oxide,terbium oxide,dysprosium oxide,holmium oxide,erbium oxide,thulium oxide,ytterbium oxide and lutetium oxide contents-Ind
  • GB/T 14144-1993 Test method for determination of radial interstitial oxygen variation in silicon
  • GB/T 14144-2009 Testing method for determination of radial interstitial oxygen variation in silicon

国家市场监督管理总局、中国国家标准化管理委员会, Thulium Oxide Transistor

  • GB/T 37403-2019 Tetramethylammonium hydroxide developer for thin film transistor-liquid crystal display(TFT-LCD)
  • GB/T 36655-2018 Test method for alpha crystalline silicon dioxide content of spherical silica powder for electronic packaging—XRD method

Group Standards of the People's Republic of China, Thulium Oxide Transistor

  • T/CASAS 006-2020 The general specification for silicon carbide metal-oxide-semiconductor field-effect-transistor
  • T/CASAS 015-2022 Power cycling test method for silicon carbide metal-oxide-semiconductor field-effect-transistor（SiC MOSFET）
  • T/CASAS 016-2022 Transient dual test method for the measurement of the thermal resistance junction to case of silicon carbide metal-oxide-semiconductor field-effect-transistor（SiC MOSFET）
  • T/SDHIA 07-2023
  • T/CASAS 022-2022 Technical specification for gallium nitride field effect transistor used in line terminal units and triphase electricity meters
  • T/CASAS 007-2020 Test Specification for Silicon Carbide（SiC）Field-effect Transistors（MOSFET）Module of Electric Vehicles

Professional Standard - Rare Earth, Thulium Oxide Transistor

  • XB/T 613.2-2010 Chemical analysis methods of cerium-terbium oxide.Part 2:Determination of lanthanum oxide,praseodymium oxide,neodymium oxide,samarium oxide,europium oxide,gadolinium oxide,dysprosium oxide,holmium oxide,erbium oxide,thulium oxide,ytterbium oxide,lutetium

(U.S.) Joint Electron Device Engineering Council Soild State Technology Association, Thulium Oxide Transistor

  • JEDEC JES2-1992 Transistor, Gallium Arsenide Power Fet, Generic Specification

U.S. Military Regulations and Norms, Thulium Oxide Transistor

  • ARMY QPL-46320-30-1992 POWER SUPPLY, 10516158 (TRANSISTORIZED)
  • ARMY MIL-PRF-55310/30 D-2008 OSCILLATOR, CRYSTAL CONTROLLED, TYPE 1 (CRYSTAL OSCILLATOR (XO)), 450 kHz THROUGH 100 MHz, HERMETIC SEAL, LOW VOLTAGE CMOS
  • ARMY MIL-PRF-55310/12 H-2009 OSCILLATOR, CRYSTAL CONTROLLED, TYPE 1 (CRYSTAL OSCILLATOR (XO)), 0.05 MHz THROUGH 10 MHz, HERMETIC SEAL, SQUARE WAVE, CMOS
  • ARMY MIL-PRF-55310/37 A-2010 OSCILLATOR, CRYSTAL CONTROLLED, TYPE 1 (CRYSTAL OSCILLATOR (XO), 500 KHz THROUGH 85 MHz, HERMETIC SEAL, CMOS
  • ARMY MIL-PRF-55310/27 D-2008 OSCILLATOR, CRYSTAL CONTROLLED, TYPE 1 (CRYSTAL OSCILLATOR (XO)), 1.0 MHz THROUGH 85 MHz, HERMETIC SEAL, SQUARE WAVE, HIGH SPEED CMOS
  • ARMY MIL-PRF-55310/32 B-2008 OSCILLATOR, CRYSTAL CONTROLLED, TYPE 1 (CRYSTAL OSCILLATOR (XO)), 1.544 MHz THROUGH 125 MHz, HERMETIC SEAL, SQUARE WAVE, ADVANCED CMOS
  • ARMY MIL-PRF-55310/31 A-2010 OSCILLATOR, CRYSTAL CONTROLLED, TYPE 1 (CRYSTAL OSCILLATOR (XO)), 0.75 MHz THROUGH 200 MHz, HERMETIC SEAL, SQUARE WAVE, ADVANCED CMOS
  • ARMY MIL-PRF-55310/33 B-2010 OSCILLATOR, CRYSTAL CONTROLLED, TYPE 1 (CRYSTAL OSCILLATOR (XO)), 500 KHz THROUGH 85 MHz, HERMETIC SEAL, CMOS
  • ARMY MIL-PRF-55310/34 B-2010 OSCILLATOR, CRYSTAL CONTROLLED, TYPE 1 (CRYSTAL OSCILLATOR (XO)), 500 KHz THROUGH 150 MHz, HERMETIC SEAL, LOW VOLTAGE CMOS
  • ARMY MIL-PRF-55310/38 A-2010 OSCILLATOR, CRYSTAL CONTROLLED, TYPE 1 (CRYSTAL OSCILLATOR (XO), 500 KHz THROUGH 150 MHz, HERMETIC SEAL, LOW VOLTAGE CMOS
  • ARMY MIL-PRF-55310/35 A-2010 OSCILLATOR, CRYSTAL CONTROLLED, TYPE 1 (CRYSTAL OSCILLATOR (XO), 1 MHz THROUGH 133 MHz, HERMETIC SEAL, LOW VOLTAGE 2.5V CMOS
  • ARMY MIL-PRF-55310/36 A-2010 OSCILLATOR, CRYSTAL CONTROLLED, TYPE 1 (CRYSTAL OSCILLATOR (XO), 1 MHz THROUGH 100 MHz, HERMETIC SEAL, LOW VOLTAGE 1.8V CMOS
  • ARMY MIL-PRF-55310/39 A-2010 OSCILLATOR, CRYSTAL CONTROLLED, TYPE 1 (CRYSTAL OSCILLATOR (XO), 1 MHz THROUGH 133 MHz, HERMETIC SEAL, LOW VOLTAGE 2.5V CMOS

Professional Standard - Building Materials, Thulium Oxide Transistor

  • JC/T 817-2014 Gem grade synthetic cubic zirconia crystals
  • JC/T 2343-2015 Single crystal alumina tube prepared by edge-defined film-fed crystal growth

Taiwan Provincial Standard of the People's Republic of China, Thulium Oxide Transistor

  • CNS 8104-1981 Method for Measuring MOSFET Linear Threshold Voltage
  • CNS 8106-1981 Method for Measuring MOSFET Saturated Threshold Voltage
  • CNS 13624-1995 Test Methods for Crystallographic Perfection of Gallium Arsenside by Molten Potassium Hydroxide(KOH)Etch Technique

British Standards Institution (BSI), Thulium Oxide Transistor

  • BS EN 62416:2010 Semiconductor devices - Hot carrier test on MOS transistors
  • BS EN 62373:2006 Bias-temperature stability test for metal-oxide, semiconductor, field-effect transistors (MOSFET)
  • BS EN 62417:2010 Semiconductor devices - Mobile ion tests for metal-oxide semiconductor field effect transistors (MOSFETs)
  • BS IEC 60747-8-4:2004 Discrete semiconductor devices - Metal-oxide semiconductor field-effect transistors (MOSFETs) for power switching applications
  • BS IEC 62373-1:2020 Semiconductor devices. Bias-temperature stability test for metal-oxide, semiconductor, field-effect transistors (MOSFET) - Fast BTI test for MOSFET
  • BS IEC 63275-1:2022 Semiconductor devices. Reliability test method for silicon carbide discrete metal-oxide semiconductor field effect transistors - Test method for bias temperature instability
  • 20/30406234 DC BS IEC 63275-2 Ed.1.0. Semiconductor devices. Reliability test method for silicon carbide discrete metal-oxide semiconductor field effect transistors. Part 2. Test method for bipolar degradation by body diode operating
  • BS IEC 63284:2022 Semiconductor devices. Reliability test method by inductive load switching for gallium nitride transistors
  • 17/30366375 DC BS IEC 62373-1. Semiconductor devices. Bias-temperature stability test for metal-oxide semiconductor field-effect transistors (MOSFET). Part 1. Fast BTI Test method
  • 18/30381548 DC BS EN 62373-1. Semiconductor devices. Bias-temperature stability test for metal-oxide semiconductor field-effect transistors (MOSFET). Part 1. Fast BTI Test method
  • 20/30406230 DC BS IEC 63275-1. Semiconductor devices. Reliability test method for silicon carbide discrete metal-oxide semiconductor field effect transistors. Part 1. Test method for bias temperature instability
  • BS EN ISO 12782-2:2012 Soil quality. Parameters for geochemical modelling of leaching and speciation of constituents in soils and materials. Extraction of crystalline iron oxides and hydroxides with dithionite
  • BS EN 12607-2:2014 Bitumen and bituminous binders. Determination of the resistance to hardening under influence of heat and air. TFOT method
  • 20/30409285 DC BS IEC 63284. Semiconductor devices. Reliability test method of on-stress reliability by inductive load switching for gallium nitride transistors

Defense Logistics Agency, Thulium Oxide Transistor

  • DLA SMD-5962-87697 REV C-2006 MICROCIRCUIT, DIGITAL, ADVANCED CMOS, OCTAL D-TYPE FLIP-FLOP WITH CLOCK ENABLE, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
  • DLA SMD-5962-87654 REV C-2006 MICROCIRCUIT, DIGITAL, FAST CMOS, 1-OF-8 DECODER, TTL COMPATIBLE, MONOLITHIC SILICON
  • DLA SMD-5962-86071 REV C-2002 MICROCIRCUIT, DIGITAL, BIPOLAR, ADVANCED SCHOTTKY, TTL, SHIFT REGISTER, MONOLITHIC SILICON
  • DLA SMD-5962-86074 REV C-2002 MICROCIRCUIT, DIGITAL, BIPOLAR, ADVANCED SCHOTTKY, TTL, REGISTER, MONOLITHIC SILICON
  • DLA SMD-5962-86072 REV D-2002 MICROCIRCUIT, DIGITAL, BIPOLAR, ADVANCED SCHOTTKY, TTL, BINARY COUNTER, MONOLITHIC SILICON
  • DLA SMD-5962-88503 REV J-2003 MICROCIRCUIT, LINEAR, DUAL MOSFET DRIVERS, MONOLITHIC SILICON
  • DLA SMD-5962-86883 REV A-2003 MICROCIRCUIT, DIGITAL, HIGH SPEED CMOS, QUAD 2-INPUT AND GATE WITH TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
  • DLA SMD-5962-95762-1995 MICROCIRCUIT, DIGITAL, FAST CMOS, BUFFER/CLOCK DRIVER WITH INVERTING THREE-STATE OUTPUTS, TTL COMPATIBLE INPUTS AND LIMITED OUTPUT VOLTAGE SWING, MONOLITHIC SILICON
  • DLA SMD-5962-90741 REV B-2006 MICROCIRCUIT, DIGITAL, BIPOLAR CMOS, OCTAL BUFFER AND LINE DRIVERS/MOS DRIVER WITH THREE-STATE OUTPUTS, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
  • DLA SMD-5962-90744 REV B-2006 MICROCIRCUIT, DIGITAL, BIPOLAR CMOS, 10-BIT BUS/MOS MEMORY DRIVER WITH THREE-STATE OUTPUTS, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
  • DLA SMD-5962-87660 REV A-2001 MICROCIRCUITS, LINEAR, MOSFET DRIVER, DUAL POWER
  • DLA SMD-5962-87698 REV A-2003 MICROCIRCUIT, DIGITAL, ADVANCED CMOS, DUAL 4-INPUT MULTIPLEXER, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
  • DLA SMD-5962-85504 REV D-2005 MICROCIRCUIT, DIGITAL, HIGH SPEED CMOS, 3-TO-8 LINE DECODER WITH TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
  • DLA SMD-5962-86831 REV B-2007 MICROCIRCUIT, DIGITAL, HIGH-SPEED CMOS, QUAD 2-INPUT NAND GATE WITH TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
  • DLA SMD-5962-86852 REV A-2003 MICROCIRCUIT, DIGITAL, HIGH SPEED CMOS, QUAD 2- INPUT OR GATE WITH TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
  • DLA SMD-5962-86867 REV D-2003 MICROCIRCUIT, DIGITAL, HIGH SPEED CMOS, OCTAL TRANSPARENT LATCH WITH THREE-STATE OUTPUTS, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
  • DLA SMD-5962-86890 REV C-2006 MICROCIRCUIT, DIGITAL, HIGH SPEED CMOS, HEX SCHMITT TRIGGER, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
  • DLA SMD-5962-90934 REV A-1999 MICROCIRCUITS, DIGITAL, ADVANCED CMOS, QUAD 2-PORT REGISTER, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
  • DLA SMD-5962-90984 REV A-2006 MICROCIRCUIT, DIGITAL, HIGH-SPEED CMOS, DUAL DECADE RIPPLE COUNTER, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
  • DLA SMD-5962-96665 REV D-2005 MICROCIRCUIT, DIGITAL, RADIATION HARDENED, CMOS, HEX VOLTAGE LEVEL SHIFTER FOR TTL-TO-CMOS OR CMOS-TO- CMOS OPERATION, MONOLITHIC SILICON
  • DLA SMD-5962-88770 REV H-2003 MICROCIRCUIT, LINEAR, SINGLE POWER MOSFET DRIVER, MONOLITHIC SILICON
  • DLA SMD-5962-90939 REV C-2006 MICROCIRCUIT, DIGITAL, BIPOLAR CMOS, OCTAL BUFFER AND LINE DRIVER/MOS DRIVER WITH INVERTED THREE-STATE OUTPUTS, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
  • DLA SMD-5962-85130 REV C-2003 MICROCIRCUIT, DIGITAL, HIGH-SPEED CMOS, OCTAL BUFFER WITH THREE-STATE OUTPUTS, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
  • DLA SMD-5962-87554 REV E-2004 MICROCIRCUIT, DIGITAL, CMOS, 1-OF-8 DECODER/DEMULTIPLEXER, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
  • DLA SMD-5962-90747 REV B-1995 MICROCIRCUIT, DIGITAL, BIPOLAR CMOS, TTL COMPATIBLE, OCTAL D-TYPE EDGE TRIGGERED FLIP-FLOP, MONOLITHIC SILICON
  • DLA SMD-5962-96736-1996 MICROCIRCUIT, DIGITAL, RADIATION HARDENED, CMOS, HIGH SPEED 8-BIT BIDIRECTIONAL CMOS/TTL INTERFACE LEVEL CONVERTER, MONOLITHIC SILICON
  • DLA SMD-5962-87553 REV B-2005 MICROCIRCUIT, DIGITAL, ADVANCED CMOS, DUAL 1-OF-4 DECODER/DEMULTIPLEXER, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
  • DLA SMD-5962-87556 REV D-2005 MICROCIRCUIT, DIGITAL, ADVANCED CMOS, OCTAL TRANSPARENT LATCH WITH THREE-STATE OUTPUTS, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
  • DLA SMD-5962-91732-1993 MICROCIRCUIT, DIGITAL, HIGH-SPEED CMOS, 3-TO-8 LINE DECODER/DEMULTIPLEXOR, TTL COMPATIBLE, MONOLITHIC SILICON
  • DLA SMD-5962-87663 REV F-2007 MICROCIRCUIT, DIGITAL, ADVANCED CMOS, OCTAL TRANSCEIVER WITH THREE-STATE OUTPUTS, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
  • DLA SMD-5962-92018 REV A-2007 MICROCIRCUIT, DIGITAL, ADVANCED CMOS, 16-BIT BUS DRIVERS WITH THREE-STATE OUTPUTS, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
  • DLA SMD-5962-92022 REV A-2004 MICROCIRCUIT, DIGITAL, ADVANCED CMOS, 16-BIT BUS DRIVER WITH THREE-STATE OUTPUTS, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
  • DLA SMD-5962-92023 REV A-2004 MICROCIRCUIT, DIGITAL, ADVANCED CMOS, 16-BIT BUS TRANSCEIVER WITH THREE-STATE OUTPUTS, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
  • DLA SMD-5962-92148 REV D-1999 MICROCIRCUIT, DIGITAL, ADVANCED BIPOLAR CMOS, OCTAL TRANSCEIVER WITH THREE-STATE OUTPUTS, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
  • DLA SMD-5962-92157 REV A-1996 MICROCIRCUIT, DIGITAL, FAST CMOS, BUFFER/CLOCK DRIVER WITH THREE-STATE OUTPUTS, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
  • DLA SMD-5962-85506 REV D-2003 MICROCIRCUIT, DIGITAL, HIGH SPEED CMOS, OCTAL BUS TRANSCEIVER WITH THREE-STATE OUTPUTS, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
  • DLA SMD-5962-90702 REV A-2006 MICROCIRCUIT, DIGITAL, HIGH SPEED CMOS, QUAD 2-INPUT NONINVERTING MULTIPLEXER, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
  • DLA SMD-5962-90703 REV A-2006 MICROCIRCUIT, DIGITAL, HIGH SPEED CMOS, QUAD 2-INPUT INVERTING MULTIPLEXER, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
  • DLA SMD-5962-04228-2004 MICROCIRCUITS, DIGITAL, ADVANCED CMOS, UP/DOWN BINARY COUNTER WITH PRESET AND RIPPLE CLOCK, TTL COMPLATIBLE INPUTS, MONOLITHIC SILICON
  • DLA SMD-5962-91725-1994 MICROCIRCUIT, DIGITAL, BIPOLAR CMOS, SCAN TEST DEVICE WITH OCTAL D-TYPE LATCH, THREE-STATE OUTPUTS, MONOLITHIC SILICON
  • DLA SMD-5962-92024 REV A-2004 MICROCIRCUIT, DIGITAL, ADVANCED CMOS, 16-BIT D-TYPE TRANSPARENT LATCH WITH THREE-STATE OUTPUTS, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
  • DLA SMD-5962-85505 REV C-2005 MICROCIRCUIT, DIGITAL, HIGH-SPEED CMOS, OCTAL BUFFER/LINE DRIVER WITH THREE-STATE OUTPUTS, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
  • DLA SMD-5962-90743 REV A-2006 MICROCIRCUIT, DIGITAL, BIPOLAR CMOS, OCTAL BUFFER AND LINE DRIVER WITH THREESTATE OUTPUTS, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
  • DLA SMD-5962-90750 REV A-2006 MICROCIRCUIT, DIGITAL, BIPOLAR CMOS, OCTAL BUS TRANSCEIVER WITH INVERTING THREE-STATE OUTPUTS, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
  • DLA SMD-5962-90752 REV A-2006 MICROCIRCUIT, DIGITAL, BIPOLAR CMOS, OCTAL BUS TRANSCEIVER WITH INVERTING THREE-STATE OUTPUTS, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
  • DLA SMD-5962-90758 REV A-2006 MICROCIRCUIT, DIGITAL, HIGH SPEED CMOS, DUAL 2-BIT BISTABLE TRANSPARENT LATCH, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
  • DLA SMD-5962-90940 REV A-2006 MICROCIRCUIT, DIGITAL, BIPOLAR CMOS, OCTAL BUS TRANSCEIVER WITH THREE-STATE OUTPUTS, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
  • DLA SMD-5962-03247 REV B-2005 MICROCIRCUIT, HYBRID, LINEAR, POWER MOSFET, DUAL CHANNEL, OPTOCOUPLER
  • DLA SMD-5962-96897 REV C-2005 MICROCIRCUIT, LINEAR, OPERATIONAL AMPLIFIER, SINGLE, HIGH VOLTAGE, MOSFET, MONOLITHIC SILICON
  • DLA SMD-5962-87630 REV D-2003 MICROCIRCUIT, DIGITAL, FAST CMOS, NONINVERTING LINE DRIVER/BUFFER WITH THREE-STATE OUTPUTS, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
  • DLA SMD-5962-87644 REV B-2003 MICROCIRCUIT, DIGITAL, FAST CMOS, NONINVERTING OCTAL TRANSPARENT LATCH WITH THREE-STATE OUTPUTS, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
  • DLA SMD-5962-87656 REV B-2006 MICROCIRCUIT, DIGITAL, FAST CMOS, OCTAL D-TYPE FLIP-FLOP WITH CLEAR, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
  • DLA SMD-5962-91723 REV B-2003 MICROCIRCUIT, DIGITAL, ADVANCED CMOS, 4-BIT PRESETTABLE BINARY COUNTER, SYNCHRONOUS RESET, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
  • DLA SMD-5962-91724-1993 MICROCIRCUIT, DIGITAL, BICMOS OCTAL BUS TRANSCEIVERS AND REGISTERS WITH THREE-STATE OUTPUTS, TTL COMPATIBLE, MONOLITHIC SILICON
  • DLA SMD-5962-92025 REV A-2004 MICROCIRCUIT, DIGITAL, ADVANCED CMOS, 16-BIT D-TYPE EDGE-TRIGGERED FLIP-FLOP WITH THREE-STATE OUTPUTS, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
  • DLA SMD-5962-90742 REV A-2006 MICROCIRCUIT, DIGITAL, BIPOLAR CMOS, OCTAL BUFFER AND LINE DRIVER WITH INVERTING THREE-STATE OUTPUTS, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
  • DLA SMD-5962-90746 REV B-2006 MICROCIRCUIT, DIGITAL, BIPOLAR CMOS, OCTAL D-TYPE TRANSPARENT LATCH WITH THREE-STATE OUTPUTS, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
  • DLA SMD-5962-90748 REV A-2006 MICROCIRCUIT, DIGITAL, BIPOLAR CMOS, OCTAL BUFFER AND LINE DRIVER WITH INVERTING THREE-STATE OUTPUTS, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
  • DLA SMD-5962-90870 REV A-2006 MICROCIRCUIT, DIGITAL, BIPOLAR CMOS, OCTAL REGISTERED TRANSCEIVER WITH THREE-STATE OUTPUTS, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
  • DLA SMD-5962-91724 REV A-2008 MICROCIRCUIT, DIGITAL, BICMOS OCTAL BUS TRANSCEIVERS AND REGISTERS WITH THREESTATE OUTPUTS, TTL COMPATIBLE, MONOLITHIC SILICON
  • DLA SMD-5962-96521 REV B-2005 MICROCIRCUIT, DIGITAL, RADIATION HARDENED, ADVANCED CMOS, TRIPLE 3-INPUT NAND GATE, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
  • DLA SMD-5962-96523 REV B-2005 MICROCIRCUIT, DIGITAL, RADIATION HARDENED, ADVANCED CMOS, TRIPLE 3-INPUT AND GATE, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
  • DLA SMD-5962-96817 REV B-1997 MICROCIRCUIT, DIGITAL, ADVANCED HIGH SPEED CMOS, QUADRUPLE 2-INPUT EXCLUSIVE-OR GATE, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
  • DLA SMD-5962-96821 REV C-2003 MICROCIRCUIT, DIGITAL, ADVANCED HIGH SPEED CMOS, QUADRUPLE 2-INPUT POSITIVE AND GATE, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
  • DLA SMD-5962-96823 REV A-1997 MICROCIRCUIT, DIGITAL, ADVANCED HIGH SPEED CMOS, QUADRUPLE 2-INPUT POSITIVE-NAND GATE, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
  • DLA SMD-5962-91610 REV B-2007 MICROCIRCUIT, DIGITAL, ADVANCED CMOS, 9-BIT D FLIP-FLOP, POSITIVE EDGE TRIGGERED, WITH THREE-STATE OUTPUTS, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
  • DLA SMD-5962-91611 REV A-2000 MICROCIRCUITS, DIGITAL, ADVANCED CMOS, 8-BIT D FLIP-FLOP, POSITIVE EDGE-TRIGGERED WITH THREE-STATE OUTPUTS, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
  • DLA SMD-5962-87627 REV C-2006 MICROCIRCUIT, DIGITAL, FAST CMOS, OCTAL D FLIP-FLOP WITH CLOCK ENABLE, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
  • DLA SMD-5962-87655 REV B-2003 MICROCIRCUIT, DIGITAL, FAST CMOS, INVERTING OCTAL LINE DRIVER/BUFFER WITH THREE-STATE OUTPUTS, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
  • DLA SMD-5962-91722 REV D-2004 MICROCIRCUIT, DIGITAL, ADVANCED CMOS, 4-BIT PRESETTABLE BINARY COUNTER, ASYNCHRONOUS RESET, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
  • DLA SMD-5962-85507 REV E-2003 MICROCIRCUIT, DIGITAL, HIGH SPEED CMOS, OCTAL D-TYPE FLIP-FLOP WITH THREE-STATE OUTPUTS, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
  • DLA SMD-5962-90706 REV A-2006 MICROCIRCUIT, DIGITAL, HIGH SPEED CMOS, NONINVERTING HEX BUFFER/LINE DRIVER WITH THREE-STATE OUTPUTS, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
  • DLA SMD-5962-90749 REV A-2006 MICROCIRCUIT, DIGITAL, BIPOLAR CMOS, OCTAL BUFFER AND LINE DRIVER WITH NONINVERTING THREE-STATE OUTPUTS, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
  • DLA SMD-5962-95614 REV A-2008 MICROCIRCUIT, DIGITAL, ADVANCED BIPOLAR CMOS, SCAN TEST DEVICE WITH 18-BIT BUS TRANSCEIVER, THREE-STATE OUTPUTS, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
  • DLA SMD-5962-96517 REV D-2007 MICROCIRCUIT, DIGITAL, RADIATION HARDENED, ADVANCED CMOS, HEX INVERTER, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
  • DLA SMD-5962-96813 REV A-2007 MICROCIRCUIT, DIGITAL, ADVANCED CMOS, HEX INVERTER SCHMITT TRIGGER, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
  • DLA SMD-5962-95683 REV B-2000 MICROCIRCUIT, DIGITAL, RADIATION HARDENED HIGH SPEED CMOS, QUAD 2-INPUT AND GATE, TTL COMPATIBLE, MONOLITHIC SILICON
  • DLA SMD-5962-91609 REV B-2007 MICROCIRCUIT, DIGITAL, ADVANCED CMOS, 8-BIT DIAGNOSTIC REGISTER WITH THREESTATE OUTPUTS, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
  • DLA SMD-5962-87631 REV C-2005 MICROCIRCUIT, DIGITAL, ADVANCED CMOS, OCTAL D-TYPE FLIP-FLOP, TTL COMPATIBLE INPUTS, THREE-STATE OUTPUTS, MONOLITHIC SILICON
  • DLA SMD-5962-87725 REV B-2006 MICROCIRCUIT, DIGITAL, HIGH-SPEED CMOS, OCTAL D-TYPE FLIP-FLOP WITH MASTER RESET, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
  • DLA SMD-5962-90701 REV A-2006 MICROCIRCUIT, DIGITAL, HIGH SPEED CMOS, DUAL J-K FLIP-FLOP WITH SET AND RESET, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
  • DLA SMD-5962-90848 REV A-2006 MICROCIRCUIT, DIGITAL, HIGH SPEED CMOS, PRESETTABLE SYNCHRONOUS 4-BIT BINARY UP/DOWN COUNTER, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
  • DLA SMD-5962-90906 REV A-2006 MICROCIRCUIT, DIGITAL, ADVANCED CMOS, DUAL 1-OF-4 DATA SELECTORS/MULTIPLEXERS WITH THREE-STATE OUTPUTS AND TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
  • DLA SMD-5962-90938 REV B-2006 MICROCIRCUIT, DIGITAL, BIPOLAR CMOS, OCTAL BUFFER AND LINE DRIVER WITH OPEN COLLECTOR OUTPUTS, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
  • DLA SMD-5962-87525 REV F-2007 MICROCIRCUIT, DIGITAL, ADVANCED CMOS, DUAL D-TYPE FLIP-FLOP WITH PRESET AND CLEAR, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
  • DLA SMD-5962-96720 REV C-2000 MICROCIRCUIT, DIGITAL, RADIATION HARDENED ADVANCED CMOS, 9-BIT ODD/EVEN PARITY GENERATOR CHECKER, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
  • DLA SMD-5962-97528-1997 MICROCIRCUIT, DIGITAL, ADVANCED HIGH SPEED CMOS, QUADRUPLE 2-INPUT POSITIVE-NOR GATE, MONOLITHIC SILICON
  • DLA SMD-5962-97571-1997 MICROCIRCUIT, DIGITAL, ADVANCED HIGH SPEED CMOS, QUADRUPLE 2-INPUT POSITIVE-NOR GATE, TTL COMPATIBLE, MONOLITHIC SILICON
  • DLA SMD-5962-95658 REV C-2000 MICROCIRCUIT, DIGITAL, RADIATION HARDENED, ADVANCED CMOS, TRIPLE THREE-INPUT NAND GATE, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
  • DLA SMD-5962-95659 REV C-2000 MICROCIRCUIT, DIGITAL, RADIATION HARDENED, ADVANCED CMOS, DUAL 4-INPUT NAND GATE, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
  • DLA SMD-5962-96597 REV B-2007 MICROCIRCUIT, DIGITAL, RADIATION HARDENED, ADVANCED CMOS, DUAL 4-INPUT NOR GATE, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
  • DLA SMD-5962-96819 REV A-1997 MICROCIRCUIT, DIGITAL, ADVANCED HIGH SPEED CMOS, OCTAL BUS TRANSCEIVER WITH THREE-STATE OUTPUTS, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
  • DLA SMD-5962-95721 REV B-2000 MICROCIRCUIT, DIGITAL, RADIATION HARDENED HIGH SPEED CMOS, TRIPLE 3-INPUT AND GATE, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
  • DLA SMD-5962-95732 REV B-2000 MICROCIRCUIT, DIGITAL, RADIATION HARDENED HIGH SPEED CMOS, HEX INVERTER, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
  • DLA SMD-5962-95734 REV B-2000 MICROCIRCUIT, DIGITAL, RADIATION HARDENED HIGH SPEED CMOS, TRIPLE 3-INPUT NOR GATE, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
  • DLA SMD-5962-95735 REV B-2000 MICROCIRCUIT, DIGITAL, RADIATION HARDENED HIGH SPEED CMOS, 8-INPUT NAND GATE, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
  • DLA SMD-5962-95736 REV B-2000 MICROCIRCUIT, DIGITAL, RADIATION HARDENED HIGH SPEED CMOS, QUAD 2-INPUT OR GATE, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
  • DLA SMD-5962-95760 REV B-2000 MICROCIRCUIT, DIGITAL, RADIATION HARDENED HIGH SPEED CMOS, DUAL 4-INPUT NOR GATE, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
  • DLA SMD-5962-95765 REV B-2000 MICROCIRCUIT, DIGITAL, RADIATION HARDENED HIGH SPEED CMOS, TRIPLE 3-INPUT NAND GATE, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
  • DLA SMD-5962-95766 REV A-1998 MICROCIRCUIT, DIGITAL, RADIATION HARDENED, HIGH SPEED CMOS, DUAL 4-INPUT AND GATE, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
  • DLA SMD-5962-96529 REV B-2005 MICROCIRCUIT, DIGITAL, RADIATION HARDENED, ADVANCED CMOS, TRIPLE 3-INPUT NOR GATE, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
  • DLA SMD-5962-86856 REV A-2003 MICROCIRCUIT, DIGITAL, HIGH SPEED CMOS, OCTAL D-TYPE LATCH WITH THREE-STATE OUTPUTS AND LS TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
  • DLA SMD-5962-96577 REV A-2005 MICROCIRCUIT, DIGITAL, RADIATION HARDENED, ADVANCED CMOS, LOOK-AHEAD CARRY GENERATOR FOR COUNTERS, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
  • DLA SMD-5962-96863 REV B-1997 MICROCIRCUIT, DIGITAL, ADVANCED HIGH SPEED CMOS QUADRUPLE BUS BUFFER GATE WITH THREE-STATE OUTPUTS, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
  • DLA SMD-5962-95733 REV B-2000 MICROCIRCUIT, DIGITAL, RADIATION HARDENED HIGH SPEED CMOS, DUAL 4-INPUT NAND GATE, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
  • DLA SMD-5962-96869 REV B-1997 MICROCIRCUIT, DIGITAL, ADVANCED HIGH SPEED CMOS QUADRUPLE BUS BUFFER GATE WITH THREE-STATE OUTPUTS, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
  • DLA SMD-5962-96870 REV B-2003 MICROCIRCUIT, DIGITAL, ADVANCED BIPOLAR CMOS, 18-BIT UNIVERSAL BUS TRANSCEIVER WITH THREE-STATE OUTPUTS, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
  • DLA SMD-5962-95749 REV B-2000 MICROCIRCUIT, DIGITAL, RADIATION HARDENED HIGH SPEED CMOS, DUAL DECADE RIPPLE COUNTER, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
  • DLA SMD-5962-95752 REV B-2000 MICROCIRCUIT, DIGITAL, RADIATION HARDENED HIGH SPEED CMOS, QUAD 2-INPUT EXCLUSIVE NOR GATE, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
  • DLA SMD-5962-95768 REV B-2000 MICROCIRCUIT, DIGITAL, RADIATION HARDENED, HIGH SPEED CMOS, 4-BIT MAGNITUDE COMPARATOR, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
  • DLA SMD-5962-97533 REV C-2003 MICROCIRCUIT, DIGITAL, LOW VOLTAGE CMOS, QUADRUPLE 2-INPUT POSITIVE NAND GATE, MONOLITHIC SILICON
  • DLA SMD-5962-97534 REV B-2001 MICROCIRCUIT, DIGITAL, LOW VOLTAGE CMOS, QUADRUPLE 2-INPUT POSITIVE-AND GATE, MONOLITHIC SILICON
  • DLA SMD-5962-95774 REV B-2004 MICROCIRCUIT, DIGITAL, RADIATION HARDENED, HIGH SPEED CMOS, 4-BIT BINARY FULL ADDER WITH FAST CARRY, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
  • DLA SMD-5962-95619 REV B-2002 MICROCIRCUIT, DIGITAL, ADVANCED CMOS, 16-BIT BUFFER/LINE DRIVER WITH THREE-STATE OUTPUTS, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
  • DLA SMD-5962-95620 REV D-2003 MICROCIRCUIT, DIGITAL, ADVANCED CMOS, 16-BIT TRANSCEIVER WITH THREE-STATE OUTPUTS, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
  • DLA SMD-5962-95636 REV B-1998 MICROCIRCUIT, DIGITAL, RADIATION HARDENED, ADVANCED CMOS, QUAD 2-INPUT NAND GATE, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
  • DLA SMD-5962-95637 REV B-2004 MICROCIRCUIT, DIGITAL, RADIATION HARDENED, HIGH SPEED CMOS, QUAD 2-INPUT NAND GATE, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
  • DLA SMD-5962-95661 REV C-2000 MICROCIRCUIT, DIGITAL, RADIATION HARDENED, ADVANCED CMOS, OCTAL TRANSPARENT LATCH WITH THREE-STATE OUTPUTS, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
  • DLA SMD-5962-96581 REV B-2006 MICROCIRCUIT, DIGITAL, RADIATION HARDENED, ADVANCED CMOS, QUADRUPLE S-R LATCH, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
  • DLA SMD-5962-96585 REV A-2006 MICROCIRCUIT, DIGITAL, RADIATION HARDENED, ADVANCED CMOS, 4-BIT BINARY FULL ADDER WITH FAST CARRY, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
  • DLA SMD-5962-96761-1996 MICROCIRCUIT, DIGITAL, ADVANCED BIPOLAR CMOS, 1-LINE TO 8-LINE CLOCK DRIVER, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
  • DLA SMD-5962-96806 REV B-1997 MICROCIRCUIT, DIGITAL, ADVANCED HIGH SPEED CMOS, OCTAL BUFFER/DRIVER WITH INVERTING THREE-STATE OUTPUTS, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
  • DLA SMD-5962-95737 REV A-1998 MICROCIRCUIT, DIGITAL, RADIATION HARDENED HIGH SPEED CMOS, 4-BIT BINARY RIPPLE COUNTER, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
  • DLA SMD-5962-95741 REV B-2000 MICROCIRCUIT, DIGITAL, RADIATION HARDENED HIGH SPEED CMOS, 10-TO-4 LINE PRIORITY ENCODER, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
  • DLA SMD-5962-95750 REV B-2000 MICROCIRCUIT, DIGITAL, RADIATION HARDENED HIGH SPEED CMOS, DUAL FOUR-STAGE BINARY COUNTER, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
  • DLA SMD-5962-95754 REV B-2000 MICROCIRCUIT, DIGITAL, RADIATION HARDENED HIGH SPEED CMOS, DUAL 4-INPUT MULTIPLEXER, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
  • DLA SMD-5962-95755 REV B-2000 MICROCIRCUIT, DIGITAL, RADIATION HARDENED, HIGH SPEED CMOS, QUAD 2-INPUT MULTIPLEXER, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
  • DLA SMD-5962-95770 REV A-1998 MICROCIRCUIT, DIGITAL, RADIATION HARDENED, HIGH SPEED CMOS, 4-BIT BINARY SYNCHRONOUS COUNTER, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
  • DLA SMD-5962-95816 REV A-2007 MICROCIRCUIT, DIGITAL, ADVANCED CMOS, 16-BIT TRANSCEIVER/REGISTER WITH THREE-STATE OUTPUTS, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
  • DLA SMD-5962-87628 REV D-2006 MICROCIRCUIT, DIGITAL, FAST CMOS, OCTAL NONINVERTING D-TYPE FLIP-FLOP WITH THREE-STATE OUTPUTS AND TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
  • DLA SMD-5962-86853 REV A-2003 MICROCIRCUIT, DIGITAL, HIGH SPEED CMOS, DUAL D-TYPE FLIP-FLOP WITH PRESET AND CLEAR WITH LS TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
  • DLA SMD-5962-86855 REV A-2003 MICROCIRCUIT, DIGITAL, HIGH SPEED CMOS, 8-BIT PARALLEL-IN/SERIAL-OUT SHIFT REGISTER WITH LS TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
  • DLA SMD-5962-94750-1995 MICROCIRCUIT, DIGITAL, CMOS SERIALLY CONTROLLED ACCESS NETWORK, PARALLEL/SERIAL CONVERTER, TTL COMPATIBLE INPUTS, CMOS OUTPUTS, MONOLITHIC SILICON
  • DLA SMD-5962-95841 REV A-2007 MICROCIRCUIT, DIGITAL, ADVANCED BIPOLAR CMOS, 16-BIT BUS TRANSCEIVER AND REGISTER WITH THREE-STATE OUTPUTS, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
  • DLA SMD-5962-96715 REV C-2000 MICROCIRCUIT, DIGITAL, RADIATION HARDENED ADVANCED CMOS, NONINVERTING QUAD BUFFER WITH THREE-STATE OUTPUTS, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
  • DLA SMD-5962-96725 REV D-1999 MICROCIRCUIT, DIGITAL, RADIATION HARDENED, ADVANCED CMOS, OCTAL TRANSPARENT LATCH WITH THREE-STATE OUTPUTS, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
  • DLA SMD-5962-96753 REV A-1999 MICROCIRCUIT, DIGITAL, RADIATION HARDENED, ADVANCED CMOS, CLOCK AND WAIT-STATE GENERATION CIRCUIT, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
  • DLA SMD-5962-96768 REV A-2003 MICROCIRCUIT, DIGITAL, ADVANCED BIPOLAR CMOS, QUADRUPLE BUS BUFFER GATE WITH THREE-STATE OUTPUTS, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
  • DLA SMD-5962-96774 REV A-1999 MICROCIRCUIT, DIGITAL, ADVANCED BIPOLAR CMOS, 16-BIT BUS TRANSCEIVER WITH 25-OMEGA SERIES RESISTORS AND THREE-STATE OUTPUTS, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
  • DLA SMD-5962-96808 REV B-2003 MICROCIRCUIT, DIGITAL, ADVANCED BIPOLAR CMOS, 16-BIT TRI-PORT UNIVERSAL BUS EXCHANGER WITH THREE-STATE OUTPUTS, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
  • DLA SMD-5962-96827 REV A-2003 MICROCIRCUIT, DIGITAL, FAST CMOS, 8-BIT DIAGNOSTIC SCAN REGISTER, TTL COMPATIBLE INPUTS AND LIMITED OUTPUT VOLTAGE SWING, MONOLITHIC SILICON
  • DLA SMD-5962-96861 REV A-1997 MICROCIRCUIT, DIGITAL, ADVANCED HIGH SPEED CMOS, DUAL POSITIVE EDGE-TRIGGERED D-TYPE FLIP-FLOP WITH CLEAR AND PRESET, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
  • DLA SMD-5962-96867 REV B-1997 MICROCIRCUIT, DIGITAL, ADVANCED HIGH SPEED CMOS OCTAL TRANSPARENT D-TYPE LATCH WITH 3-STATE OUTPUTS, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
  • DLA SMD-5962-96880 REV A-2003 MICROCIRCUIT, DIGITAL, ADVANCED CMOS, 16-BIT BUFFER/DRIVER WITH INVERTING THREE-STATE OUTPUTS, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
  • DLA SMD-5962-95745 REV D-2004 MICROCIRCUIT, DIGITAL, RADIATION HARDENED, HIGH SPEED CMOS, NON-INVERTING OCTAL BUS TRANSCEIVER WITH THREE-STATE OUTPUTS, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
  • DLA SMD-5962-95757 REV B-2000 MICROCIRCUIT, DIGITAL, RADIATION HARDENED, HIGH SPEED CMOS, SYNCHRONOUS 4-BIT BINARY UP/DOWN COUNTER, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
  • DLA SMD-5962-97527 REV A-2003 MICROCIRCUIT, DIGITAL, ADVANCED BIPOLAR CMOS, 10-BIT BUS-EXCHANGE SWITCH WITH THREE STATE OUTPUTS AND LEVEL SHIFTING, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
  • DLA SMD-5962-95746 REV B-2000 MICROCIRCUIT, DIGITAL, RADIATION HARDENED HIGH SPEED CMOS, 8-BIT UNIVERSAL SHIFT REGISTER WITH THREE-STATE OUTPUTS, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
  • DLA SMD-5962-96886 REV B-2002 MICROCIRCUIT, DIGITAL-LINEAR, CMOS, 12 BIT ANALOG TO DIGITAL CONVERTERS WITH SERIAL CONTROL AND 11 ANALOG INPUTS, MONOLITHIC SILICON
  • DLA SMD-5962-91607 REV A-2006 MICROCIRCUIT, DIGITAL, ADVANCED CMOS, 8-BIT UNIVERSAL SHIFT/STORAGE REGISTER WITH SYNCHRONOUS RESET AND COMMON I/O PINS, THREE-STATE OUTPUTS, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
  • DLA MIL-PRF-19500/421 G VALID NOTICE 1-2009 Semiconductor, Device, Dual Transistor, Unitized, NPN/PNP, Complementary, Silicon, Types 2N3838, 2N4854, and 2N4854U, JAN, JANTX, and JANTXV
  • DLA SMD-5962-95842 REV A-2007 MICROCIRCUIT, DIGITAL, ADVANCED BIPOLAR CMOS, 18-BIT BUS-INTERFACE FLIP-FLOP WITH THREE-STATE OUTPUTS, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
  • DLA SMD-5962-96557 REV C-2004 MICROCIRCUIT, DIGITAL, RADIATION HARDENED, ADVANCED CMOS, 8-BIT SERIAL-IN/PARALLEL-OUT SHIFT REGISTER, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
  • DLA SMD-5962-96561 REV B-2001 MICROCIRCUIT, DIGITAL, RADIATION HARDENED, ADVANCED CMOS, 4-BIT UP/DOWN BINARY SYNCHRONOUS COUNTER, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
  • DLA SMD-5962-96583 REV B-2006 MICROCIRCUIT, DIGITAL, RADIATION HARDENED, ADVANCED CMOS, 9-BIT ODD/EVEN PARITY GENERATOR/CHECKER, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
  • DLA SMD-5962-96697-1996 MICROCIRCUIT, DIGITAL, ADVANCED BIPOLAR CMOS, 18-BIT BUS-EXCHANGE SWITCH WITH THREE-STATE OUTPUTS, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
  • DLA SMD-5962-96718 REV C-2000 MICROCIRCUIT, DIGITAL, RADIATION HARDENED ADVANCED CMOS, NONINVERTING OCTAL BUFFER/LINE DRIVER WITH THREE-STATE OUTPUTS, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
  • DLA SMD-5962-96719 REV E-2005 MICROCIRCUIT, DIGITAL, RADIATION HARDENED, ADVANCED CMOS, NONINVERTING OCTAL BIDIRECTIONAL BUS TRANSCEIVER WITH THREE-STATE OUTPUTS, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
  • DLA SMD-5962-96721 REV C-2000 MICROCIRCUIT, DIGITAL, RADIATION HARDENED, ADVANCED CMOS, ERROR DETECTION AND CORRECTION CIRCUIT WITH THREE-STATE OUTPUTS, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
  • DLA SMD-5962-96746 REV A-2003 MICROCIRCUIT, DIGITAL, ADVANCED BIPOLAR CMOS, 8-BIT TO 9-BIT PARITY BUS TRANSCEIVER WITH THREE-STATE OUTPUTS, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
  • DLA SMD-5962-96748 REV D-1999 MICROCIRCUIT, DIGITAL, ADVANCED BIPOLAR CMOS, 3.3-VOLT OCTAL BUS TRANSCEIVER AND REGISTER WITH BUS HOLD, THREE-STATE OUTPUTS, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
  • DLA SMD-5962-96775 REV A-2003 MICROCIRCUIT, DIGITAL, ADVANCED BIPOLAR CMOS, 16-BIT INCIDENT-WAVE SWITCHING BUS TRANSCEIVER WITH THREE-STATE OUTPUTS, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
  • DLA SMD-5962-96780 REV B-2003 MICROCIRCUIT, DIGITAL, ADVANCED CMOS, 3.3-V 16-BIT BUS TRANSCEIVER WITH EQUIVALENT 22 OHM A-PORT OUTPUT RESISTORS, THREE-STATE OUTPUTS, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
  • DLA SMD-5962-96782 REV B-2003 MICROCIRCUIT, DIGITAL, ADVANCED HIGH SPEED CMOS, OCTAL BUFFER/DRIVER WITH NONINVERTING THREE-STATE OUTPUTS, MONOLITHIC SILICON
  • DLA SMD-5962-96783 REV B-1997 MICROCIRCUIT, DIGITAL, ADVANCED HIGH SPEED CMOS, OCTAL BUFFER/DRIVER WITH NONINVERTING THREE-STATE OUTPUTS, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
  • DLA SMD-5962-96849 REV A-2000 MICROCIRCUIT, DIGITAL, ADVANCED BIPOLAR CMOS, 3.3- V 16-BIT REGISTERED TRANSCEIVER WITH BUS HOLD, THREE-STATE OUTPUTS, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
  • DLA SMD-5962-95739 REV B-2000 MICROCIRCUIT, DIGITAL, RADIATION HARDENED HIGH SPEED CMOS, QUAD 2-INPUT NAND SCHMITT TRIGGER, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
  • DLA SMD-5962-95747 REV C-1999 MICROCIRCUIT, DIGITAL, RADIATION HARDENED, HIGH SPEED CMOS, OCTAL TRANSPARENT LATCH WITH THREE-STATE OUTPUTS, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
  • DLA SMD-5962-95764 REV B-2000 MICROCIRCUIT, DIGITAL, RADIATION HARDENED HIGH SPEED CMOS, OCTAL D-TYPE FLIP-FLOP, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
  • DLA SMD-5962-95767 REV A-1998 MICROCIRCUIT, DIGITAL, RADIATION HARDENED, HIGH SPEED CMOS, DUAL 2-BIT BISTABLE TRANSPARENT LATCH, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
  • DLA SMD-5962-95836-1995 MICROCIRCUIT, DIGITAL, BIPOLAR CMOS, OCTAL EDGE-TRIGGERED D-TYPE FLIP-FLOP WITH THREE-STATE OUTPUTS, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
  • DLA SMD-5962-95576 REV A-1996 MICROCIRCUIT, DIGITAL, ADVANCED BIPOLAR CMOS, 36-BIT UNIVERSAL BUS TRANSCEIVER WITH THREE-STATE OUTPUTS, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
  • DLA SMD-5962-95577 REV A-1996 MICROCIRCUIT, DIGITAL, ADVANCED BIPOLAR CMOS, 36-BIT BUS TRANSCEIVER WITH THREE-STATE OUTPUTS, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
  • DLA SMD-5962-94672 REV A-2007 MICROCIRCUIT, DIGITAL, ADVANCED BIPOLAR CMOS, SCAN TEST DEVICE WITH 18-BIT UNIVERSAL BUS TRANSCEIVER, THREE-STATE OUTPUTS, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
  • DLA SMD-5962-95578 REV A-1996 MICROCIRCUIT, DIGITAL, ADVANCED BIPOLAR CMOS, 36-BIT REGISTERED BUS TRANSCEIVER WITH THREE-STATE OUTPUTS, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
  • DLA SMD-5962-92272 REV D-2008 MICROCIRCUIT, DIGITAL, FAST CMOS, 16-BIT BIDIRECTIONAL TRANSCEIVER WITH SERIES RESISTOR AND THREE-STATE OUTPUTS, TTL COMPATIBLE INPUTS AND LIMITED OUTPUT VOLTAGE SWING, MONOLITHIC SILICON
  • DLA SMD-5962-95642 REV C-2003 MICROCIRCUIT, DIGITAL, ADVANCED BIPOLAR CMOS, 3.3-VOLT OCTAL BUS TRANSCEIVER WITH BUS HOLD, THREE-STATE OUTPUTS, AND TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
  • DLA SMD-5962-95662 REV B-1998 MICROCIRCUIT, DIGITAL, RADIATION HARDENED, ADVANCED CMOS, OCTAL D FLIP-FLOP WITH THREE-STATE OUTPUTS, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
  • DLA SMD-5962-95663 REV C-2000 MICROCIRCUIT, DIGITAL, RADIATION HARDENED, HIGH SPEED CMOS, 8-BIT SERIAL-IN/PARALLEL-OUT SHIFT REGISTER, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
  • DLA SMD-5962-95590 REV A-1996 MICROCIRCUIT, DIGITAL, ADVANCED BIPOLAR CMOS, 16-BIT BUS TRANSCEIVER WITH THREE-STATE OUTPUTS, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
  • DLA SMD-5962-96543 REV E-2006 MICROCIRCUIT, DIGITAL, RADIATION HARDENED, ADVANCED CMOS, QUADRUPLE 2-INPUT NAND SCHMITT TRIGGER, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
  • DLA SMD-5962-96555 REV B-2001 MICROCIRCUIT, DIGITAL, RADIATION HARDENED, ADVANCED CMOS, SYNCHRONOUS PRESETTABLE 4-BIT BINARY COUNTER, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
  • DLA SMD-5962-96586 REV A-2006 MICROCIRCUIT, DIGITAL, RADIATION HARDENED, ADVANCED CMOS, NONINVERTING HEX BUFFER/LINE DRIVER WITH THREE-STATE OUTPUTS, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
  • DLA SMD-5962-96587 REV A-2006 MICROCIRCUIT, DIGITAL, RADIATION HARDENED, ADVANCED CMOS, NONINVERTING HEX BUFFER/LINE DRIVER WITH THREE-STATE OUTPUTS, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
  • DLA SMD-5962-96714 REV C-2000 MICROCIRCUIT, DIGITAL, RADIATION HARDENED ADVANCED CMOS, DUAL J-K FLIP FLOP WITH SET AND RESET, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
  • DLA SMD-5962-96747-1997 MICROCIRCUIT, DIGITAL, ADVANCED CMOS, SCAN PATH SELECTOR WITH 8-BIT BIDIRECTIONAL DATA BUS, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
  • DLA SMD-5962-96769 REV A-1998 MICROCIRCUIT, DIGITAL, ADVANCED BIPOLAR CMOS, 10-BIT BUS-INTERFACE D-TYPE LATCH WITH THREE-STATE OUTPUTS, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
  • DLA SMD-5962-96773 REV C-2005 MICROCIRCUIT, DIGITAL, ADVANCED CMOS, OCTAL EDGE-TRIGGERED D-TYPE FLIP-FLOP WITH THREE-STATE OUTPUTS, MONOLITHIC SILICON
  • DLA SMD-5962-96810 REV B-1998 MICROCIRCUIT, DIGITAL, ADVANCED BIPOLAR CMOS, 3.3-VOLT 16-BIT TRANSPARENT D-TYPE LATCH WITH BUS HOLD, THREE-STATE OUTPUTS, AND TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
  • DLA SMD-5962-96829 REV A-2003 MICROCIRCUIT, DIGITAL, ADVANCED CMOS, OCTAL BUFFER/LINE DRIVER WITH NONINVERTING THREE-STATE OUTPUTS, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
  • DLA SMD-5962-95712 REV A-2007 MICROCIRCUIT, DIGITAL, ADVANCED BIPOLAR CMOS, 9-BIT BUS INTERFACE D-TYPE LATCH WITH THREE-STATE OUTPUTS, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
  • DLA SMD-5962-96865 REV B-1997 MICROCIRCUIT, DIGITAL, ADVANCED HIGH SPEED CMOS OCTAL EDGE-TRIGGERED D-TYPE FLIP-FLOP WITH THREE-STATE OUTPUTS, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
  • DLA SMD-5962-95740 REV B-2000 MICROCIRCUIT, DIGITAL, RADIATION HARDENED HIGH SPEED CMOS, INVERTING 3-TO-8 LINE DECODER/DEMULTIPLEXER, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
  • DLA SMD-5962-95742 REV C-1999 MICROCIRCUIT, DIGITAL, RADIATION HARDENED, HIGH SPEED CMOS, BCD DECADE SYNCHRONOUS COUNTER, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
  • DLA SMD-5962-95743 REV A-1998 MICROCIRCUIT, DIGITAL, RADIATION HARDENED, HIGH SPEED CMOS, SYNCHRONOUS PRESETTABLE 4-BIT BINARY COUNTER, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
  • DLA SMD-5962-95753 REV B-2000 MICROCIRCUIT, DIGITAL, RADIATION HARDENED HIGH SPEED CMOS, DUAL 2-TO-4 LINE DECODER/DEMULTIPLEXER, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
  • DLA SMD-5962-95763 REV E-2005 MICROCIRCUIT, DIGITAL, RADIATION HARDENED, HIGH SPEED CMOS, DUAL D FLIP-FLOP WITH SET AND RESET, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
  • DLA SMD-5962-97529-1998 MICROCIRCUIT, DIGITAL, LOW VOLTAGE CMOS, OCTAL BUS TRANSCEIVER AND REGISTER WITH THREE-STATE OUTPUTS, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
  • DLA SMD-5962-95772 REV B-2004 MICROCIRCUIT, DIGITAL, RADIATION HARDENED, HIGH SPEED CMOS, INVERTING OCTAL BUFFER/LINE DRIVER WITH THREE-STATE OUTPUTS, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
  • DLA SMD-5962-95835-1995 MICROCIRCUIT, DIGITAL, BIPOLAR CMOS, OCTAL TRANSPARENT D-TYPE LATCH WITH THREE-STATE OUTPUTS, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
  • DLA MIL-PRF-19500/559 J-2007 SEMICONDUCTOR DEVICE, UNITIZED, NPN, SILICON, SWITCHING, FOUR TRANSISTOR ARRAY, TYPES 2N6989, 2N6989U, AND 2N6990, JAN, JANTX, JANTXV, AND JANS
  • DLA SMD-5962-95844 REV F-2003 MICROCIRCUIT, DIGITAL, ADVANCED BIPOLAR CMOS, 3.3-VOLT NONINVERTING OCTAL BUFFER/DRIVER WITH BUS HOLD, THREE-STATE OUTPUTS, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
  • DLA SMD-5962-96547 REV C-2007 MICROCIRCUIT, DIGITAL, RADIATION HARDENED, ADVANCED CMOS, DUAL 2-LINE TO 4-LINE DECODER/DEMULTIPLEXER, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
  • DLA SMD-5962-96717 REV E-2005 MICROCIRCUIT, DIGITAL, RADIATION HARDENED, ADVANCED CMOS, INVERTING OCTAL BUFFER/LINE DRIVER WITH THREE-STATE OUTPUTS, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
  • DLA SMD-5962-96726 REV D-1999 MICROCIRCUIT, DIGITAL, RADIATION HARDENED, ADVANCED CMOS, NONINVERTING OCTAL BUFFER/LINE DRIVER WITH THREE-STATE OUTPUTS, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
  • DLA SMD-5962-96811 REV A-1999 MICROCIRCUIT, DIGITAL, ADVANCED BIPOLAR CMOS, 3.3-VOLT SCAN TEST DEVICE WITH 18-BIT UNIVERSAL BUS TRANSCEIVER, WITH BUS HOLD, THREE-STATE OUTPUTS, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
  • DLA SMD-5962-95738 REV B-2000 MICROCIRCUIT, DIGITAL, RADIATION HARDENED HIGH SPEED CMOS, DUAL J-K FLIP FLOP WITH SET AND RESET, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
  • DLA SMD-5962-95756 REV B-2000 MICROCIRCUIT, DIGITAL, RADIATION HARDENED, HIGH SPEED CMOS, PRESETTABLE SYNCHRONOUS 4-BIT BINARY UP/DOWN COUNTER, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
  • DLA SMD-5962-95769 REV C-1999 MICROCIRCUIT, DIGITAL, RADIATION HARDENED, HIGH SPEED CMOS, DUAL J-K FLIP-FLOP WITH SET AND RESET, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
  • DLA SMD-5962-95771 REV A-1998 MICROCIRCUIT, DIGITAL, RADIATION HARDENED, HIGH SPEED CMOS, SYNCHRONOUS BCD DECADE UP/DOWN COUNTER, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
  • DLA SMD-5962-95776 REV B-2004 MICROCIRCUIT, DIGITAL, RADIATION HARDENED, HIGH SPEED CMOS, INVERTING OCTAL BUFFER/LINE DRIVER WITH THREE-STATE OUTPUTS, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
  • DLA SMD-5962-94673 REV A-2007 MICROCIRCUIT, DIGITAL, ADVANCED BIPOLAR CMOS, OCTAL BUFFER/DRIVER WITH 25 OMEGA SERIES RESISTOR AND NONINVERTING THREE-STATE OUTPUTS, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
  • DLA SMD-5962-94697 REV C-1998 MICROCIRCUIT, DIGITAL, ADVANCED BIPOLAR CMOS, OCTAL BUFFER/LINE DRIVER WITH 25 OHM SERIES RESISTOR AND INVERTING THREE-STATE OUTPUTS, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
  • DLA SMD-5962-94698-1996 MICROCIRCUIT, DIGITAL, ADVANCED BIPOLAR CMOS, SCAN TEST DEVICE WITH 18-BIT TRANSCEIVER AND REGISTER, THREE-STATE OUTPUTS AND TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
  • DLA SMD-5962-94671 REV A-2007 MICROCIRCUIT, DIGITAL, ADVANCED BIPOLAR CMOS, 18-BIT UNIVERSAL BUS TRANSCEIVER WITH THREE-STATE OUTPUTS, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
  • DLA SMD-5962-94718 REV B-1997 MICROCIRCUIT, DIGITAL, ADVANCED BIPOLAR CMOS, OCTAL BUFFER/DRIVER WITH NONINVERTING THREE-STATE OUTPUTS, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
  • DLA SMD-5962-94744 REV B-1996 MICROCIRCUIT, DIGITAL, FAST CMOS, 16-BIT REGISTERED/LATCH TRANSCEIVER WITH PARITY, SERIES RESISTOR AND THREE-STATE OUTPUTS, TTL COMPATIBLE INPUTS AND LIMITED OUTPUT VOLTAGE SWING, MONOLITHIC SILICON
  • DLA SMD-5962-96563 REV A-2001 MICROCIRCUIT, DIGITAL, RADIATION HARDENED, ADVANCED CMOS, SYNCHRONOUS 4-BIT UP/DOWN BCD DECADE COUNTER, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
  • DLA SMD-5962-96565 REV A-2001 MICROCIRCUIT, DIGITAL, RADIATION HARDENED, ADVANCED CMOS, SYNCHRONOUS 4-BIT UP/DOWN BINARY COUNTER, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
  • DLA SMD-5962-95744 REV C-1999 MICROCIRCUIT, DIGITAL, RADIATION HARDENED, HIGH SPEED CMOS, NON-INVERTING OCTAL BUFFER/LINE DRIVER WITH THREE-STATE OUTPUTS, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
  • DLA SMD-5962-95751 REV B-2000 MICROCIRCUIT, DIGITAL, RADIATION HARDENED HIGH SPEED CMOS, NON-INVERTING OCTAL BUFFER/LINE DRIVER WITH THREE-STATE OUTPUTS, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
  • DLA SMD-5962-95759 REV B-2000 MICROCIRCUIT, DIGITAL, RADIATION HARDENED HIGH SPEED CMOS, NONINVERTING OCTAL BUS TRANSCEIVER/REGISTER WITH THREE-STATE OUTPUTS, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
  • DLA SMD-5962-95775 REV A-1998 MICROCIRCUIT, DIGITAL, RADIATION HARDENED, HIGH SPEED CMOS, NON-INVERTING HEX BUFFER/LINE DRIVER WITH THREE-STATE OUTPUTS, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
  • DLA SMD-5962-95831 REV D-2007 MICROCIRCUIT, DIGITAL, ADVANCED BICMOS, 3.3 VOLT OCTAL TRANSPARENT D-TYPE LATCH WITH BUS HOLD, THREE-STATE OUTPUTS, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
  • DLA SMD-5962-95832 REV C-2003 MICROCIRCUIT, DIGITAL, ADVANCED BIPOLAR CMOS, 3.3- VOLT OCTAL EDGE-TRIGGERED D-TYPE FLIP FLOP WITH BUS HOLD, THREE-STATE OUTPUTS, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
  • DLA MIL-PRF-19500/558 J-2013 SEMICONDUCTOR DEVICE, UNITIZED, PNP, SILICON, SWITCHING, FOUR TRANSISTOR ARRAY, TYPES 2N6987, 2N6987U, AND 2N6988, JAN, JANTX, JANTXV, JANS, JANSM, JANSD, JANSP, JANSL, JANSR, JANSF, JANSG, AND JANSH
  • DLA SMD-5962-95606 REV A-2007 MICROCIRCUIT, DIGITAL, ADVANCED BIPOLAR CMOS, OCTAL TRANSCEIVER/LINE DRIVER WITH 25 OHM SERIES RESISTOR AND THREE-STATE OUTPUTS, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
  • DLA SMD-5962-96698-1996 MICROCIRCUIT, DIGITAL, ADVANCED BIPOLAR CMOS, SCAN TEST DEVICE WITH 18-BIT TRANSCEIVER/REGISTER, THREE-STATE OUTPUTS, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
  • DLA SMD-5962-96809 REV B-2003 MICROCIRCUIT, DIGITAL, ADVANCED BIPOLAR CMOS, 3.3 VOLT 16-BIT BUFFER/DRIVER WITH BUS HOLD AND 22 OHM SERIES RESISTORS AND THREE-STATE OUTPUTS, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
  • DLA SMD-5962-95748 REV C-1999 MICROCIRCUIT, DIGITAL, RADIATION HARDENED, HIGH SPEED CMOS, OCTAL D-TYPE POSITIVE EDGE-TRIGGERED FLIP-FLOP WITH THREE-STATE OUTPUTS, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
  • DLA MIL-PRF-19500/662 E-2013 SEMICONDUCTOR DEVICE, TRANSISTOR, FIELD EFFECT RADIATION HARDENED P-CHANNEL, SILICON, TYPES 2N7422, 2N7422U, 2N7423, AND 2N7423U, JANTXVR AND F AND JANSR AND F
  • DLA MIL-PRF-19500/662 F-2013 SEMICONDUCTOR DEVICE, TRANSISTOR, FIELD EFFECT RADIATION HARDENED P-CHANNEL, SILICON, TYPES 2N7422, 2N7422U, 2N7423, AND 2N7423U, JANTXVR AND F AND JANSR AND F
  • DLA MIL-PRF-19500/495 G (1)-2013 SEMICONDUCTOR DEVICE, UNITIZED, DUAL-TRANSISTOR, NPN, SILICON TYPES 2N5793, 2N5794, AND 2N5793A, 2N5794A, 2N5794U, 2N5794UC, 2N5794AU, 2N5794AUC, JAN, JANTX, JANTXV, JANS, JANSM, JANSD, JANSP, JANSL, JANSR, JANSF, JANSG, AND JANSH
  • DLA MIL-PRF-19500/495 G-2010 SEMICONDUCTOR DEVICE, UNITIZED, DUAL-TRANSISTOR, NPN, SILICON TYPES 2N5793, 2N5794, AND 2N5794U, 2N5794UC, 2N5793A, 2N5794A, 2N5794AU, AND 2N5794AUC, JAN, JANTX, JANTXV, JANS, JANSM, JANSD, JANSP, JANSL, JANSR, JANSF, JANSG, AND JANSH.
  • DLA SMD-5962-95614-1995 MICROCIRCUIT, DIGITAL, ADVANCED BIPOLAR CMOS, SCAN TEST DEVICE WITH 18-BIT UNIVERSAL BUS TRANSCEIVER, THREE-STATE OUTPUTS, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
  • DLA SMD-5962-95758 REV B-2000 MICROCIRCUIT, DIGITAL, RADIATION HARDENED HIGH SPEED CMOS, OCTAL POSITIVE EDGE-TRIGGERED D-TYPE FLIP-FLOP WITH THREE-STATE OUTPUTS, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
  • DLA MIL-PRF-19500/704 B-2008 SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR, N-CHANNEL, SILICON, TYPES 2N7485U3, 2N7486U3, AND 2N7487U3, JANTXVR AND JANSR
  • DLA MIL-PRF-19500/633 C-2008 SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTORS, P-CHANNEL SILICON, TYPES 2N7403 AND 2N7404, JANSD AND JANSR
  • DLA MIL-PRF-19500/658 VALID NOTICE 2-2011 Semiconductor Device, Field Effect Radiation Hardened (Total Dose and Single Event Effects) Transistor, P-Channel Silicon Type 2N7438, and 2N7439 JANSD and JANSR
  • DLA SMD-5962-95647 REV B-1998 MICROCIRCUIT, DIGITAL, ADVANCED BICMOS, 3.3 V 16-BIT EDGE-TRIGGERED D-TYPE FLIP-FLOPS WITH BUS HOLD, THREE-STATE OUTPUTS, AND TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
  • DLA SMD-5962-95761 REV A-2007 MICROCIRCUIT, DIGITAL, FAST CMOS, BUFFER/CLOCK DRIVER WITH NONINVERTING THREE-STATE OUTPUTS, TTL COMPATIBLE INPUTS AND LIMITED OUTPUT VOLTAGE SWING, MONOLITHIC SILICON
  • DLA MIL-PRF-19500/704 B (1)-2010 SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR, N-CHANNEL, SILICON, TYPES 2N7485U3, 2N7486U3, AND 2N7487U3, JANTXVR AND JANSR
  • DLA MIL-PRF-19500/704 C-2010 SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR, N-CHANNEL, SILICON, TYPES 2N7485U3, 2N7486U3, AND 2N7487U3, JANTXVR AND JANSR
  • DLA MIL-PRF-19500/705 C-2011 SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR, N-CHANNEL, SILICON TYPES 2N7488T3, 2N7489T3, AND 2N7490T3, JANTXVR AND JANSR
  • DLA MIL-PRF-19500/662 C-2008 SEMICONDUCTOR DEVICE, TRANSISTOR, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE ONLY), P-CHANNEL, SILICON, TYPES 2N7422, 2N7422U, 2N7423, AND 2N7423U, JANTXVR AND F AND JANSR AND F
  • DLA MIL-PRF-19500/687 B-2008 SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR, N-CHANNEL SILICON, TYPES 2N7509, 2N7510, AND 2N7511, JANTXVD, R AND JANSD, R
  • DLA MIL-PRF-19500/689 VALID NOTICE 2-2011 Semiconductor Device, Field Effect Radiation Hardened (Total Dose and Single Event Effects) Transistor, N-Channel Silicon Types 2N7512, 2N7513, and 2N7514 JANTXVD, R and JANSD, R
  • DLA MIL-PRF-19500/687 B VALID NOTICE 1-2013 Semiconductor Device, Field Effect Radiation Hardened (Total Dose and Single Event Effects) Transistor, N-Channel Silicon, Types 2N7509, 2N7510, and 2N7511, JANTXVD, R and JANSD, R

Association Francaise de Normalisation, Thulium Oxide Transistor

  • NF C96-051*NF EN 62373:2006 Bias-temperature stability test for metal-oxide, semiconductor, field-effect transistors (MOSFET)
  • NF EN 62417:2010 Dispositifs à semiconducteurs - Essais d'ions mobiles pour transistors à semiconducteur à oxyde métallique à effet de champ (MOSFET)
  • NF EN 62373:2006 Essai de stabilité de température en polarisation pour transistors à effet de champ métal-oxyde-semiconducteur (MOSFET)
  • NF C80-203*NF EN 62417:2010 Semiconductor devices - Mobile ion tests for metal-oxide semiconductor field effect transistors (MOSFETs).
  • NF X31-090-2*NF EN ISO 12782-2:2012 Soil quality - Parameters for geochemical modelling of leaching and speciation of constituents in soils and soil materials - Part 2 : extraction of crystalline iron oxides with dithionite
  • NF F62-011-2:1992 Railway rolling stock. Functional general requirements. Transistorized ballasts. Collection of particular leaves.
  • NF T51-621:2000 Plastics - Determination of melting behaviour (melting temperature or melting range) of semi-crystalline polymers by capillary tube and polarizing-microscope methods.

German Institute for Standardization, Thulium Oxide Transistor

  • DIN EN 62373:2007 Bias-temperature stability test for metal-oxide, semiconductor, field-effect transistors (MOSFET) (IEC 62373:2006); German version EN 62373:2006
  • DIN EN 62417:2010-12 Semiconductor devices - Mobile ion tests for metal-oxide semiconductor field effect transistors (MOSFETs) (IEC 62417:2010); German version EN 62417:2010
  • DIN EN 62373:2007-01 Bias-temperature stability test for metal-oxide, semiconductor, field-effect transistors (MOSFET) (IEC 62373:2006); German version EN 62373:2006
  • DIN EN 62417:2010 Semiconductor devices - Mobile ion tests for metal-oxide semiconductor field effect transistors (MOSFETs) (IEC 62417:2010); German version EN 62417:2010
  • DIN EN ISO 12782-2:2012 Soil quality - Parameters for geochemical modelling of leaching and speciation of constituents in soils and materials - Part 2: Extraction of crystalline iron oxides and hydroxides with dithionite (ISO 12782-2:2012); German version EN ISO 12782-2:2012

RU-GOST R, Thulium Oxide Transistor

  • GOST 25733-1983 Alumina. Method for the crystallooptic determination of aluminium oxide alpha-modification

Danish Standards Foundation, Thulium Oxide Transistor

  • DS/EN 62417:2010 Semiconductor devices - Mobile ion tests for metal-oxide semiconductor field effect transistors (MOSFETs)
  • DS/EN 62373:2006 Bias-temperature stability test for metal-oxide, semiconductor, field-effect transistors (MOSFET)

ES-UNE, Thulium Oxide Transistor

  • UNE-EN 62417:2010 Semiconductor devices - Mobile ion tests for metal-oxide semiconductor field effect transistors (MOSFETs) (Endorsed by AENOR in September of 2010.)
  • UNE-EN 62373:2006 Bias-temperature stability test for metal-oxide, semiconductor, field-effect transistors (MOSFET) (IEC 62373:2006). (Endorsed by AENOR in November of 2006.)

Institute of Electrical and Electronics Engineers (IEEE), Thulium Oxide Transistor

  • IEEE Std 581-1978 IEEE Standard Definitions, Symbols, and Characterization of Metal-Nitride-Oxide Field-Effect Transistors
  • IEEE 581-1978 IEEE Standard Definitions, Symbols, and Characterization of Metal-Nitrite-Oxide Field-Effect Transistors

Professional Standard - Electron, Thulium Oxide Transistor

  • SJ/T 11824-2022 Metal Oxide Semiconductor Field Effect Transistor (MOSFET) Equivalent Capacitance and Voltage Change Rate Test Method
  • SJ 50033/42-1994 Semiconductor discrete device.Detail specification for type CSO467 GaAs microwave FET
  • SJ 50033/78-1995 Semiconductor discrete devices.Detail specification for type CS0464 GaAs microwave FET
  • SJ 50033/79-1995 Semiconductor discrete devices.Detail specification for type CS0536 GaAs microwave power FET
  • SJ 50033/120-1997 Semiconductor discrete devices Detail specification for type CS205 GaAs microwave power field effect transistor
  • SJ 50033.51-1994 Semiconductor discrete devices.Detail specification for type CS0558 GaAs microwave dual gate FET
  • SJ 50033.52-1994 semiconductor discrete device.Detail specification for type CS0529 GaAs microwave Power field effect transistor
  • SJ 50033.54-1994 Semiconductor discrete device.Detail specification for type CS0532 GaAs microwave power field effect transistor
  • SJ 50033/119-1997 Semiconductor discrete devices Detail specification for type CS204 GaAs microwave power field effect transistor
  • SJ 50033/81-1995 Semiconductor discrete devices.Detail specification for type CS0524 GaAs microwave power FET
  • SJ 50033/80-1995 Semiconductor discrete devices.Detail specification for type CS0513 GaAs microwave power FET
  • SJ 50033.53-1994 Semiconductor discrete device.Detail specification for type CS0530 and CS0531 GaAs microwave Power field effect transistor
  • SJ 50033/106-1996 semiconductor discrete device.Detail specification for type CS203 GaAs microwave Low noise field effect transistor
  • SJ/T 11829.1-2022 Plasma enhanced chemical vapor deposition (PECVD) equipment for crystalline silicon photovoltaic cells Part 1: Tubular PECVD equipment

Military Standard of the People's Republic of China-General Armament Department, Thulium Oxide Transistor

  • GJB 3933-2000 Specification for ultrapure aluminum oxide powder materials for laser crystals
  • GJB 2618-1996 Specification for rubber hoses transporting liquid oxidizers

RO-ASRO, Thulium Oxide Transistor

  • STAS 10207/4-1984 VITREOUS AND CRYSTALLIZED ENAMELS Determination of resistance to hot sodium hydroxide

Lithuanian Standards Office , Thulium Oxide Transistor

  • LST EN 62417-2010 Semiconductor devices - Mobile ion tests for metal-oxide semiconductor field effect transistors (MOSFETs) (IEC 62417:2010)
  • LST EN 62373-2006 Bias-temperature stability test for metal-oxide, semiconductor, field-effect transistors (MOSFET) (IEC 62373:2006)

International Electrotechnical Commission (IEC), Thulium Oxide Transistor

  • IEC 60293:1968 Supply voltages for transistorized nuclear instruments
  • IEC 60747-8-4:2004 Discrete semiconductor devices - Part 8-4: Metal-oxide-semiconductor field-effect transistors (MOSFETs) for power switching applications
  • IEC 63275-2:2022 Semiconductor devices - Reliability test method for silicon carbide discrete metal-oxide semiconductor field effect transistors - Part 2: Test method for bipolar degradation due to body diode operatio
  • IEC 62373-1:2020 Semiconductor devices - Bias-temperature stability test for metal-oxide, semiconductor, field-effect transistors (MOSFET) - Part 1: Fast BTI test for MOSFET
  • IEC 63275-1:2022 Semiconductor devices - Reliability test method for silicon carbide discrete metal-oxide semiconductor field effect transistors - Part 1: Test method for bias temperature instability
  • IEC 63284:2022 Semiconductor devices - Reliability test method by inductive load switching for gallium nitride transistors
  • IEC 62417:2010 Semiconductor devices - Mobile ion tests for metal-oxide semiconductor field effect transistors (MOSFETs)
  • IEC 62373:2006 Bias-temperature stability test for metal-oxide, semiconductor, field-effect transistors (MOSFET)

HU-MSZT, Thulium Oxide Transistor

工业和信息化部, Thulium Oxide Transistor

  • JC/T 2525-2019 Alumina ceramic tube for gas discharge tube
  • SJ/T 9014.8.2-2018 Semiconductor Devices Discrete Devices Part 8-2: Blank Detailed Specification for Superjunction Metal Oxide Semiconductor Field Effect Transistors
  • XB/T 626-2019 Methods for chemical analysis of thulium, ytterbium, and lutetium concentrates. Determination of the proportions of fifteen rare earth element oxides. Inductively coupled plasma atomic emission spectrometry.

American Society for Testing and Materials (ASTM), Thulium Oxide Transistor

  • ASTM F616M-96 Standard Test Method for Measuring MOSFET Drain Leakage Current (Metric)
  • ASTM F616M-96(2003) Standard Test Method for Measuring MOSFET Drain Leakage Current (Metric)
  • ASTM D7739-11(2020) Standard Practice for Thermal Oxidative Stability Measurement via Quartz Crystal Microbalance
  • ASTM D7739-11(2016) Standard Practice for Thermal Oxidative Stability Measurement via Quartz Crystal Microbalance
  • ASTM D7739-11 Standard Practice for Thermal Oxidative Stability Measurement via Quartz Crystal Microbalance
  • ASTM F996-98 Standard Test Method for Separating an Ionizing Radiation-Induced MOSFET Threshold Voltage Shift Into Components Due to Oxide Trapped Holes and Interface States Using the Subthreshold Current-Voltage Characteristics
  • ASTM F996-98(2003) Standard Test Method for Separating an Ionizing Radiation-Induced MOSFET Threshold Voltage Shift Into Components Due to Oxide Trapped Holes and Interface States Using the Subthreshold Current-Voltage Characteristics
  • ASTM F996-10 Standard Test Method for Separating an Ionizing Radiation-Induced MOSFET Threshold Voltage Shift Into Components Due to Oxide Trapped Holes and Interface States Using the Subthreshold Current-Voltage Characteristics
  • ASTM F996-11 Standard Test Method for Separating an Ionizing Radiation-Induced MOSFET Threshold Voltage Shift Into Components Due to Oxide Trapped Holes and Interface States Using the Subthreshold Current-Voltage Characteristics

American National Standards Institute （ANSI), Thulium Oxide Transistor

  • ANSI/ASTM D7739:2011 Practice for Thermal Oxidative Stability Measurement via Quartz Crystal Microbalance

Professional Standard - Chemical Industry, Thulium Oxide Transistor

  • HG/T 6149-2023 Determination of Silica Crystal Phase Content in Hydrogenation Catalyst and Its Support X-ray Diffraction Method

PH-BPS, Thulium Oxide Transistor

  • PNS IEC 62373-1:2021 Semiconductor devices - Bias-temperature stability test for metal-ox ide, semiconductor, field-effect transistors (MOSFET) - Part 1: Fast BTI test for MOSFET

AT-OVE/ON, Thulium Oxide Transistor

  • OVE EN IEC 63275-2:2021 Semiconductor devices - Reliability test method for silicon carbide discrete metal-oxide semiconductor field effect transistors - Part 2: Test method for bipolar degradation due to body diode operation (IEC 47/2680/CDV) (english version)
  • OVE EN IEC 63275-1:2021 Semiconductor devices - Reliability test method for silicon carbide discrete metal-oxide semiconductor field effect transistors - Part 1: Test method for bias temperature instability (IEC 47/2679/CDV) (english version)
  • OVE EN IEC 63284:2021 Semiconductor devices - Reliability test method by inductive load switching for gallium nitride transistors (IEC 47/2681/CDV) (english version)

BE-NBN, Thulium Oxide Transistor

中华人民共和国国家质量监督检验检疫总局、中国国家标准化管理委员会, Thulium Oxide Transistor

  • GB/T 30537-2014 Superconductivity―Measurements for bulk high temperature superconductors―Trapped flux density of large grain oxide superconductors

Korean Agency for Technology and Standards (KATS), Thulium Oxide Transistor

  • KS C IEC 61788-9-2016(2021) Superconductivity – Part 9: Measurements for bulk high temperature superconductors – Trapped flux density of large grain oxide superconductors
  • KS C IEC 61788-9:2016 Superconductivity – Part 9: Measurements for bulk high temperature superconductors – Trapped flux density of large grain oxide superconductors

KR-KS, Thulium Oxide Transistor

  • KS C IEC 61788-9-2016 Superconductivity – Part 9: Measurements for bulk high temperature superconductors – Trapped flux density of large grain oxide superconductors

European Committee for Standardization (CEN), Thulium Oxide Transistor

  • EN ISO 12782-2:2012 Soil quality - Parameters for geochemical modelling of leaching and speciation of constituents in soils and materials - Part 2: Extraction of crystalline iron oxides and hydroxides with dithionite (ISO 12782-2:2012)

IN-BIS, Thulium Oxide Transistor

International Organization for Standardization (ISO), Thulium Oxide Transistor

  • ISO 12782-2:2012 Soil quality - Parameters for geochemical modelling of leaching and speciation of constituents in soils and materials - Part 2: Extraction of crystalline iron oxides and hydroxides with dithionite

Professional Standard - Coal, Thulium Oxide Transistor

Compressed Gas Association (U.S.), Thulium Oxide Transistor

  • CGA G-6.6-2006 STANDARD FOR ELASTOMER-TYPE CARBON DIOXIDE BULK TRANSFER HOSE THIRD EDITION

Japanese Industrial Standards Committee (JISC), Thulium Oxide Transistor

  • JIS Z 3320:1999 Flux cored wires for CO2 gas shielded arc welding of atmospheric corrosion resisting steel

API - American Petroleum Institute, Thulium Oxide Transistor

  • API RP 1110-2007 Pressure Testing of Steel Pipelines for the Transportation of Gas@ Petroleum Gas@ Hazardous Liquids@ Highly Volatile Liquids or Carbon Dioxide (Fifth edition)
  • API RP 1110-2013 Recommended Practice for the Pressure Testing of Steel Pipelines for the Transportation of Gas@ Petroleum Gas@ Hazardous Liquids@ Highly Volatile Liquids or Carbon Dioxide (Sixth edition)

Professional Standard - Electricity, Thulium Oxide Transistor

  • DL/T 1324-2014 The technical guide for the inner wall scale stacking magnetic inspection of austenite stainless steel boiler tube

Shandong Provincial Standard of the People's Republic of China, Thulium Oxide Transistor

  • DB37/T 3205-2018 Guidelines for the implementation of the safety production risk classification management and control system for enterprises in the hydrogen peroxide industry

European Association of Aerospace Industries, Thulium Oxide Transistor

  • AECMA PREN 4149-1995 Aerospace Series Pipe Couplings 60 Degree; in Anodized Aluminium Alloy ; Interfaces for Fluid Systems

American Petroleum Institute (API), Thulium Oxide Transistor

  • API RP 1110-2013(2018) Recommended Practice for the Pressure Testing of Steel Pipelines for the Transportation of Gas, Petroleum Gas, Hazardous Liquids, Highly Volatile Liquids or Carbon Dioxide

ITU-T - International Telecommunication Union/ITU Telcommunication Sector, Thulium Oxide Transistor

  • ITU-T G.323-1989 Typical Transistorized System on Symmetric Cable Pairs - International Analogue Carrier Systems (Study Group XV; 3 pp; Cancelled)

  Thulium Oxide Transistor, metal oxide semiconductor field effect transistor, Hafnium Oxide Field Effect Transistor, Oriental Hafnium Oxide Field Effect Transistor.

 



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