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Carrier concentration

Carrier concentration, Total:21 items.

In the international standard classification, Carrier concentration involves: Testing of metals, Inorganic chemicals, Insulating fluids, Semiconducting materials, Analytical chemistry.

General Administration of Quality Supervision, Inspection and Quarantine of the People‘s Republic of China, Carrier concentration

GB/T 8757-1988 Determination of carrier concentration in gallium arsenide by the plasma resonance minimum
GB/T 8757-2006 Determination of carrier concentration in gallium arsenide by the plasma resonance minimum
GB/T 36705-2018 Test method for carrier concentration of gallium nitride substrates—Raman spectrum method
GB/T 11068-1989 Gallium arsenide epitaxial layer--Determination of carrier concentration--Voltage-capacitance method
GB/T 14146-1993 Silicon epitaxial layers--Determination of carrier concentration--Mercury probe Valtage-capacitance method
GB/T 11068-2006 Gallium arsenide epitaxial layer.Determination of carrier concentration voltage-capacitance method
GB/T 14146-2009 Silicon epitaxial layers-determination of carrier concentration-mercury probe voltages-capacitance method
GB 11068-1989 GaAs Epitaxial Layer Carrier Concentration Capacitance-Voltage Measurement Method
GB/T 14863-2013 Method for net carrier density in silicon epitaxial layers by voltage-capacitance of gated and ungated diodes
GB/T 14863-1993 Standard test method for net carrier density in silicon eqitaxial layers by voltage-capacitance of gated and ungated diodes

国家市场监督管理总局、中国国家标准化管理委员会, Carrier concentration

GB/T 14146-2021 Test method for carrier concentration of silicon epitaxial layers—Capacitance-voltage method

Professional Standard - Electron, Carrier concentration

SJ 2757-1987 Method of measurement by infra-red reflection for charge carrier concentraiton of heavily doped semiconductors
SJ 3248-1989 Methods for measuring carrier concentration of readded Gallium arsenide and Indium phosphide by infra-red reflection
SJ 3244.1-1989 Methods of measurement for hall mobility and carrier concentration of Gallium arsenide and Indium phosphide
SJ 3244.4-1989 Methods of measurement for profile distribution of carrier concentration of Gallium arsenide and Indium phosphide materials--Electrochemical voltage capacitance method

Group Standards of the People's Republic of China, Carrier concentration

T/IAWBS 003-2017 Determination of Carrier Concentration in SiC Epitaxial Layer_Mercury Probe Capacitance-Voltage Method

British Standards Institution (BSI), Carrier concentration

PD IEC TS 62607-5-3:2020 Nanomanufacturing. Key control characteristics. Thin-film organic/nano electronic devices. Measurements of charge carrier concentration

International Electrotechnical Commission (IEC), Carrier concentration

IEC TS 62607-6-16:2022 Nanomanufacturing - Key control characteristics - Part 6-16: Two-dimensional materials - Carrier concentration: Field effect transistor method
IEC TS 62607-5-3:2020 Nanomanufacturing - Key control characteristics - Part 5-3: Thin-film organic/nano electronic devices – Measurements of charge carrier concentration

American Society for Testing and Materials (ASTM), Carrier concentration

ASTM F398-92(1997) Standard Test Method for Majority Carrier Concentration in Semiconductors by Measurement of Wavenumber or Wavelength of the Plasma Resonance Minimum

International Organization for Standardization (ISO), Carrier concentration

ISO/WD TR 23683:2023 Surface chemical analysis — scanning probe microscopy — Guideline for experimental quantification of carrier concentration in semiconductor devices by using electric scanning probe microscopy