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semiconductor light

semiconductor light, Total:255 items.

In the international standard classification, semiconductor light involves: Optoelectronics. Laser equipment, Integrated circuits. Microelectronics, Semiconductor devices, Fibre optic communications, Seals, glands, Medical equipment, Ceramics, Radiation measurements, Vocabularies, Optics and optical measurements, Lamps and related equipment, Electronic display devices, Electronic components in general, Applications of information technology, Environmental testing, Analytical chemistry.


Military Standard of the People's Republic of China-General Armament Department, semiconductor light

  • GJB 33/16-2011 Semiconductor optoelectronic device.Detail specification for type 3DU32 semiconductor phototransistor
  • GJB 33/17-2011 Semiconductor optoelectronic device.Detail specification for type GO11 semiconductor photocoupler
  • GJB 33/18-2011 Semiconductor optoelectronic device.Detail specification for type GO417 bidirectional analog switch semiconductor photocoupler
  • GJB 8121-2013 General specification for semiconductor optoelectronic assembly
  • GJB 8120-2013 General specification for semiconductor optoelectronic module
  • GJB 8119-2013 General specification for semiconductor optoelectronic device
  • GJB 33/15-2011 Semiconductor optoelectronic device.Detail specification for type BT401 semiconductor infrared-emitting diode
  • GJB 5018-2001 General requirements for screening and acceptance of semiconductor optoelectronic devices
  • GJB/Z 41.3-1993 Military semiconductor discrete device series spectrum semiconductor optoelectronic devices
  • GJB 33/20-2011 Semiconductor optoelectronic device.Detail specification for type GH302 photocoupler
  • GJB 33/22-2011 Semiconductor optoelectronic device.Detail specification for type GO103 photocoupler
  • GJB 33/21-2011 Semiconductor optoelectronic device.Detail specification for GD310A series photocopier
  • GJB 33/23-2011 Semiconductor optoelectronic device.Detail specification for type GH3201Z-4 photocoupler
  • GJB 33/19-2011 Semiconductor optoelectronic device.Detail specification for type GH302-4 photocoupler
  • GJB 3519-1999 General Specification for Semiconductor Laser Diodes
  • GJB 2146A-2011 General specification for semiconductor light-emitting diode devices

RU-GOST R, semiconductor light

  • GOST 24458-1980 Semiconductor optoelectronic couplers. Essential parameters
  • GOST R 50471-1993 Semiconductor photoemitters. Measuring method for halfintensity angle
  • GOST 20766-1975 Ionizing radiation semiconductor spectrometer detectors. Types and basic parameters
  • GOST 27299-1987 Semiconductor optoelectronic devices. Terms, definitions and letter symbols of parameters
  • GOST R 59605-2021 Optics and photonics. Semiconducting photoelectric detectors. Photoelectric and photoreceiving devices. Terms and definitions
  • GOST 21934-1983 Semiconducting photoelectric detectors and receiving photoelectric devices. Terms and definitions
  • GOST 17772-1988 Semiconducting photoelectric detectors and receiving photoelectric devices. Methods of measuring photoelectric parameters and determining characteristics
  • GOST R 59607-2021 Optics and photonics. Semiconducting photoelectric detectors. Photoelectric and photoreceiving devices. Methods of measuring photoelectric parameters and determining characteristics

British Standards Institution (BSI), semiconductor light

  • BS IEC 60747-5-4:2022 Semiconductor devices - Optoelectronic devices. Semiconductor lasers
  • BS EN 62007-2:2000 Semiconductor optoelectronic devices for fibre optic system applications - Measuring methods
  • BS EN 62007-2:2009 Semiconductor optoelectronic devices for fibre optic system applications - Measuring methods
  • PD IEC TR 61292-9:2023 Tracked Changes. Optical amplifiers. Semiconductor optical amplifiers (SOAs)
  • BS EN 62007-1:2000 Semiconductor optoelectronic devices for fibre optic system applications - Essential ratings and characteristics
  • BS IEC 60747-5-4:2006 Semiconductor devices - Discrete devices - Optoelectronic devices - Semiconductor lasers
  • BS EN 62007-1:2009 Semiconductor optoelectronic devices for fibre optic system applications - Specification template for essential ratings and characteristics
  • BS EN 62007-1:2015 Semiconductor optoelectronic devices for fibre optic system applications. Specification template for essential ratings and characteristics
  • BS CECC 20000:1983 Harmonized system of quality assessment for electronic components: generic specification: semiconductor optoelectronic and liquid crystal devices
  • 19/30404095 DC BS EN IEC 60747-5-4. Semiconductor devices. Part 5-4. Optoelectronic devices. Semiconductor lasers
  • BS EN IEC 62007-1:2015+A1:2022 Semiconductor optoelectronic devices for fibre optic system applications - Specification template for essential ratings and characteristics
  • BS EN 62149-8:2014 Fibre optic active components and devices. Performance standards. Seeded reflective semiconductor optical amplifier devices
  • BS ISO 10677:2011 Fine ceramics (advanced ceramics, advanced technical ceramics). Ultraviolet light source for testing semiconducting photocatalytic materials
  • 23/30473272 DC BS IEC 60747-5-4 AMD 1. Semiconductor devices - Part 5-4. Optoelectronic devices. Semiconductor lasers
  • BS EN 62149-9:2014 Fibre optic active components and devices. Performance standards. Seeded reflective semiconductor optical amplifier transceivers
  • BS EN 61207-7:2013 Expression of performance of gas analyzers. Tuneable semiconductor laser gas analyzers
  • BS ISO 17915:2018 Optics and photonics. Measurement method of semiconductor lasers for sensing
  • BS EN 61207-7:2014 Expression of performance of gas analyzers. Tuneable semiconductor laser gas analyzers
  • BS ISO 13125:2013 Fine ceramics (advanced ceramics, advanced technical ceramics). Test method for antifungal activity of semiconducting photocatalytic materials
  • BS ISO 19635:2016 Fine ceramics (advanced ceramics, advanced technical ceramics). Test method for antialgal activity of semiconducting photocatalytic materials
  • BS ISO 27447:2019 Tracked Changes. Fine ceramics (advanced ceramics, advanced technical ceramics). Test method for antibacterial activity of semiconducting photocatalytic materials
  • BS ISO 14605:2013 Fine ceramics (advanced ceramics, advanced technical ceramics). Light source for testing semiconducting photocatalytic materials used under indoor lighting environment

Professional Standard - Electron, semiconductor light

  • SJ 20642-1997 Semiconductor opto-electronic module General specification for
  • SJ 20786-2000 General specification for semiconductor opto-electronic assembly
  • SJ/T 2215-2015 Measuring methods for semiconductor photocouplers
  • SJ 2247-1982 Outlines dimension for semiconductor optoelectronic devices
  • SJ 2214.1-1982 General procedures of measurement for semiconductor photodiodes and phototransistors
  • SJ 2218-1982 Semiconductor photocouplers in the diode mode
  • SJ 2219-1982 Semiconductor photocouplers in the transistor mode
  • SJ 2215.1-1982 General procedures of measurement for semiconductor photocouplers
  • SJ 50033/109-1996 Semiconductor optoelectronic devices.Detail specification for types GJ9031T and GJ9032T and GJ9034T semiconductor laser diodes
  • SJ 2214.3-1982 Method of measurement for dark current of semiconductor photodiodes
  • SJ 2214.5-1982 Method of measurement for junction capacitance of semiconductor photodiodes
  • SJ 2214.8-1982 Method of measurement for dark current voltage of semiconductor phototransistors
  • SJ 2214.10-1982 Method of measurement for light current of semiconductor photodiodes and phototransistors
  • SJ 20642.5-1998 Semiconductor optoelectronic module Detail specification for type GH82 opto-couplers
  • SJ 20642.4-1998 Semiconductor optoelectronic module Detail specification for type GH81 opto-couplers
  • SJ 20642.6-1998 Semiconductor opto-electronic module Detail specification for type GH83 opto-couplers
  • SJ/T 2214-2015 Measuring methods for semiconductor photodiode and phototransistor
  • SJ 2214.2-1982 Method of measurement for forward voltage of semiconductor photodiodes
  • SJ 2214.7-1982 Method of measurement for saturation voltage of semiconductor phototransistors
  • SJ 2215.6-1982 Method of measurement for junction capacitance of semiconductor photocouplers (diodes)
  • SJ 2215.8-1982 Method of measurement for output saturation voltage of semiconductor photocouplers (diodes)
  • SJ 50033/112-1996 Scmiconductor optoelectronic devices.Detail specification for type GD3251Y photodiodes
  • SJ 50033/113-1996 Semiconductor optoelectronic devices.Detail specification for type GD3252Y photodiodes
  • SJ 2215.14-1982 Method of measurement for input-to-output isolation voltage of semiconductor photocouplers
  • SJ 2215.3-1982 Method of measurement for forward current of semiconductor photocouplers (diodes)
  • SJ 2214.4-1982 Method of measurement for reverse break-down voltage of semiconductor photodiodes
  • SJ 2215.4-1982 Method of measurement for reverse current of semiconductor photocouplers (diodes)
  • SJ 2215.10-1982 Method of measurement for direct current transfer ratio of semiconductor photocouplers
  • SJ 2215.12-1982 Method of measurement for input-to-output capacitance of semiconductor photocouplers
  • SJ 50033/114-1996 Semiconductor optoelectronic devices.Detail specification for type GD3283Y position sensitive detector
  • SJ 2215.2-1982 Method of measurement for forward voltage of semiconductor photocouplers (diodes)
  • SJ 2215.13-1982 Method of measurement for input-to-output isolation resistance of semiconductor photocouplers
  • SJ 20642.3-1998 Semiconductor opto-electronic module Detail specification for type GD83 PIN-FET opto-receiver module
  • SJ 20644.1-2001 Semiconductor optoelectronic devices Detail specification for type GD3550Y PIN photodiode
  • SJ 20644.2-2001 Semiconductor optoelectronic devices Detail specification for type GD101 PIN photodiode
  • SJ 20642.2-1998 Semiconductor opto-electronic module Detail specification for type GD82 PIN-FET opto-receiver module
  • SJ 50033/111-1996 Semiconductor optoelectronic devices.Delail specification for type GT16 Si.NPN phototransistor
  • SJ 20072-1992 Detail specification for semiconductor opto-couplers for type GH24,GH25 and GH26
  • SJ 20786.1-2002 Semiconductor photoelectric assembly Detail specification for miniature duplex photoelectric localizer for type CBGS 2301
  • SJ 50033/136-1997 Semiconductor optoelectronic devices.Detail specification for red light emitting diode for type GF116
  • SJ 50033/143-1999 Semiconductor optoelectronic devices.Detail specification for type GF1120 red emitting diode
  • SJ 50033/137-1997 Semiconductor optoelectronic devices.Detail specification for orange-red light emitting diode for type GF216
  • SJ 20642.1-1998 Semiconductor opto-electronic module Detail specification for type GD81 PIN-FET opto-receiver module
  • SJ/T 11405-2009 Semiconductor optoelectronic devices for fibre optic system applications.Part 2:Measuring methods
  • SJ 50033/139-1998 Semiconductor optoelectronic devices.Detail specification for green light-emitting diode for type GF4111
  • SJ 50033/138-1998 Semiconductor optoelectronic devices.Detail specification for yellow light-emitting diode for type GF318
  • SJ 50033/58-1995 Semiconductor optoelectronic device Detail specification for green light emitting diode for type GF413
  • SJ/T 11393-2009 Semiconductor optoelectronic devices-Blank detail specification for power light-emitting diodes
  • SJ 50033/142-1999 Semiconductor optoelectronic devices.Detail specification for type GF4112 green emitting diode
  • SJ 50033/57-1995 Semiconductor optoelectronic device Detail specification for red light emitting diode for type GF115
  • SJ 50033/110-1996 Semiconductor optoelectronic devices.Detail specification for type GR9413 infrared light emitting diode
  • SJ 2215.5-1982 Method of measurement for reverse breakdown voltage of semiconductor photocouplers (diodes)
  • SJ 2215.9-1982 Method of measurement for reverse cut-off current of semiconductor photocouplers transistors
  • SJ 53930/1-2002 Semiconductor optoelectronic devices Detail specification for type GR8813 infrared emitting diode
  • SJ/T 11400-2009 Semiconductor optoeletronic devices-Blank detail specification for lower-power light-emitting diodes
  • SJ 50033/99-1995 Semiconductor optoelectronic devices.Detail specification for o/G double colour light emitting diode for type GF511
  • SJ 20642.7-2000 Semiconductor opto-electronic devices Detail specification for type GR1325J light emitting diode module
  • SJ/T 11817-2022 Blank detailed specification for light-emitting diodes for semiconductor optoelectronic devices, filament lamps
  • SJ 2214.9-1982 Method of measurement for pulse rise and fall time of semiconductor photodiodes and phototransistors
  • SJ/T 11866-2022 Semiconductor optoelectronic devices - Detailed specifications for silicon substrate white light power light emitting diodes
  • SJ 50033/140-1999 Semiconductor discrete devices Detail specification for type 3DA502 silicon microwave pulse power transistor
  • SJ 2558-1984 Detail specification for semiconductor light emitting numeric displays,Type SM1~18
  • SJ/T 11397-2009 Phosphors for light emitting diodes
  • SJ 50033/3-1994 Semiconductor discrete device.Detail specification for semiconductor opto-couplers for type GH21,GH22 and GH23 of GP,GT and GCT classes
  • SJ 50923/2-1995 Detail specification for type G2-01B-M1,G2-01B-Z1 metal case for semiconductor photosensitive devices
  • SJ 2215.7-1982 Method of measurement for collector-emitter reverse breakdown voltage of semiconductor photocouplers (diodes)
  • SJ 2215.11-1982 Method of measurement for pulse rise fall delay and storage time of semiconductor photocouplers
  • SJ 2749-1987 Method of measurement for semiconductor laser diodes
  • SJ 2750-1987 Outline dimensions for semiconductor laser diodes
  • SJ/T 11394-2009 Measure methods of semiconductor light emitting diodes
  • SJ 2214.6-1982 Method of measurement for collector-emitter reverse breakdown voltage of semiconductor phototransistors
  • SJ 50923/1-1995 Detail specification for types A6-02A-M2(Z2)and A6-01B-M1(Z1)metal case for semiconductor photocouplers
  • SJ/T 11067-1996 Commonly used terminology for semiconductor photoelectric materials and pyroelectric materials in infrared detecting materials
  • SJ/T 11402-2009 Technical specification of semiconductor laser chip used in optical fiber communication
  • SJ 2355.1-1983 General procedures of measurement for light-emitting deivces
  • SJ 2684-1986 Physical Demensions For Light Emitting Device Of Semiconductor
  • SJ/T 11856.3-2022 Technical Specifications for Semiconductor Laser Chips for Optical Fiber Communications Part 3: Electric Absorption Modulated Semiconductor Laser Chips for Light Sources
  • SJ/T 11856.2-2022 Technical Specifications for Semiconductor Laser Chips for Optical Fiber Communications Part 2: Vertical Cavity Surface Emitting Semiconductor Laser Chips for Light Sources
  • SJ/T 11399-2009 Measurement methods for chips of light emitting diodes
  • SJ/T 11401-2009 Series program for semiconductor light emitting diodes
  • SJ 50033/101-1995 Detail specification for semiconductor laser diode modules for type GJ1325
  • SJ/T 11856.1-2022 Technical Specifications for Semiconductor Laser Chips for Optical Fiber Communications Part 1: Fabry-Perot Type and Distributed Feedback Type Semiconductor Laser Chips for Light Sources
  • SJ/T 11398-2009 Technical specification for power light-emitting diode chips
  • SJ 20957-2006 General specification for large power semiconductor laser diode array
  • SJ 2355.6-1983 Method of measurement for luminous flux of light-emitting devices

International Electrotechnical Commission (IEC), semiconductor light

  • IEC TR 61292-9:2013 Optical amplifiers - Part 9: Semiconductor optical amplifiers (SOAs)
  • IEC TR 61292-9:2023 RLV Optical amplifiers - Part 9: Semiconductor optical amplifiers (SOAs)
  • IEC TR 61292-9:2023 Optical amplifiers - Part 9: Semiconductor optical amplifiers (SOAs)
  • IEC 62007-2:1997 Semiconductor optoelectronic devices for fibre optic system applications - Part 2: Measuring methods
  • IEC 62007-2:1999 Semiconductor optoelectronic devices for fibre optic system applications - Part 2: Measuring methods
  • IEC 62007-2/AMD1:1998 Semiconductor optoelectronic devices for fibre optic system applications - Part 2: Measuring methods; Amendment 1
  • IEC 62007-1:1999 Semiconductor optoelectronic devices for fibre optic system applications - Part 1: Essential ratings and characteristics
  • IEC 62007-2:2009 Semiconductor optoelectronic devices for fibre optic system applications - Part 2: Measuring methods
  • IEC 60747-5-4:2022 Semiconductor devices - Part 5-4: Optoelectronic devices - Semiconductor lasers
  • IEC 62007-1/AMD1:1998 Semiconductor optoelectronic devices for fibre optic system applications - Part 1: Essential ratings and characteristics; Amendment 1
  • IEC 62007-1:2015+AMD1:2022 CSV Semiconductor optoelectronic devices for fibre optic system applications - Part 1: Specification template for essential ratings and characteristics
  • IEC 62007-1:2015 Semiconductor optoelectronic devices for fibre optic system applications - Part 1: Specification template for essential ratings and characteristics
  • IEC 62007-1:2008 Semiconductor optoelectronic devices for fibre optic system applications - Part 1: Specification template for essential ratings and characteristics
  • IEC 60747-5-4:2006 Semiconductor devices - Discrete devices - Part 5-4: Optoelectronic devices - Semiconductor lasers
  • IEC 62149-8:2014 Fibre optic active components and devices - Performance standard - Part 8: Seeded reflective semiconductor optical amplifier devices
  • IEC 62149-9:2014 Fibre optic active components and devices - Performance standards - Part 9: Seeded reflective semiconductor optical amplifier transceivers
  • IEC 62007-1:2015/AMD1:2022 Amendment 1 - Semiconductor optoelectronic devices for fibre optic system applications - Part 1: Specification template for essential ratings and characteristics
  • IEC 61207-7:2013 Expression of performance of gas analyzers - Part 7: Tuneable semiconductor laser gas analyzers

Group Standards of the People's Republic of China, semiconductor light

SE-SIS, semiconductor light

IEC - International Electrotechnical Commission, semiconductor light

  • IEC TR 61292-9:2017 Optical amplifiers – Part 9: Semiconductor optical amplifiers (SOAs) (Edition 2.0)

Jilin Provincial Standard of the People's Republic of China, semiconductor light

German Institute for Standardization, semiconductor light

  • DIN 5032-9:2015-01 Photometry - Part 9: Measurement of the photometric quantities of incoherent emitting semiconductor light sources
  • DIN 5032-9:2015 Photometry - Part 9: Measurement of the photometric quantities of incoherent emitting semiconductor light sources
  • DIN IEC/TR 61292-9:2013 Optical amplifiers - Part 9: Semiconductor optical amplifiers (SOAs) (IEC 86C/1109/CD:2013)
  • DIN EN 62007-2:2009-09 Semiconductor optoelectronic devices for fibre optic system applications - Part 2: Measuring methods (IEC 62007-2:2009); German version EN 62007-2:2009 / Note: DIN EN 62007-2 (2001-06) remains valid alongside this standard until 2012-02-01.
  • DIN EN 62007-2:2009 Semiconductor optoelectronic devices for fibre optic system applications - Part 2: Measuring methods (IEC 62007-2:2009); German version EN 62007-2:2009
  • DIN EN 61207-7:2015-07 Expression of performance of gas analyzers - Part 7: Tuneable semiconductor laser gas analyzers (IEC 61207-7:2013); German version EN 61207-7:2013 / Note: Applies in conjunction with DIN EN 61207-1 (2011-04).

Japanese Industrial Standards Committee (JISC), semiconductor light

  • JIS R 1750:2012 Fine ceramics -- Light source for testing semiconducting photocatalytic materials used under indoor lighting environment
  • JIS R 1712:2022 Fine ceramics (advanced ceramics, advanced technical ceramics) -- Test method for antialgal activity of semiconducting photocatalytic materials
  • JIS R 1708:2016 Fine ceramics (Advanced ceramics, advanced technical ceramics) -- Test method for determination of photocatalytic activity on semiconducting photocatalytic materials by dissolved oxygen consumption

European Committee for Electrotechnical Standardization(CENELEC), semiconductor light

  • EN 62007-2:2009 Semiconductor optoelectronic devices for fibre optic system applications - Part 2: Measuring methods
  • EN 120000:1996 Generic Specification: Semiconductor Optoelectronic and Liquid Crystal Devices (Remains Current)
  • EN 62149-8:2014 Fibre optic active components and devices - Performance standards - Part 8: Seeded reflective semiconductor optical amplifier devices
  • EN 62007-1:2015 Semiconductor optoelectronic devices for fibre optic system applications - Part 1: Specification template for essential ratings and characteristics
  • EN 62149-9:2014 Fibre optic active components and devices - Performance standards - Part 9: Seeded reflective semiconductor optical amplifier transceivers

CENELEC - European Committee for Electrotechnical Standardization, semiconductor light

  • EN 62007-2:2000 Semiconductor Optoelectronic Devices for Fibre Optic System Applications Part 2: Measuring Methods
  • EN 62007-1:2000 Semiconductor Optoelectronic Devices for Fibre Optic System Applications Part 1: Essential Ratings and Characteristics
  • EN 62007-1:2009 Semiconductor optoelectronic devices for fibre optic system applications - Part 1: Specification template for essential ratings and characteristics

Association Francaise de Normalisation, semiconductor light

  • NF C93-801-2*NF EN 62007-2:2009 Semiconductor optoelectronic devices for fibre optic system applications - Part 2 : measuring methods
  • NF ISO 10677:2011 Céramiques techniques - Sources lumineuses UV destinée aux essais des matériaux photocatalytiques semi-conducteurs
  • NF EN 62007-2:2009 Dispositifs optoélectroniques à semiconducteurs pour application dans les systèmes à fibres optiques - Partie 2 : méthodes de mesure
  • NF ISO 14605:2013 Céramiques techniques - Sources lumineuses destinées aux essais des matériaux photocatalytiques semi-conducteurs dans un environnement d'éclairage intérieur
  • NF C93-801-1:2009 Semiconductor optoelectronic devices for fibre optic system applications - Part 1 : specification template for essential ratings and characteristics.
  • NF B44-103*NF ISO 10677:2011 Fine ceramics (advanced ceramics, advanced technical ceramics) - Ultraviolet light source for testing semiconducting photocatalytic materials
  • NF C93-801-1*NF EN 62007-1:2015 Semiconductor optoelectronic devices for fibre optic system applications - Part 1 : specification template for essential ratings and characteristics
  • NF C93-884-8*NF EN 62149-8:2014 Fibre optic active components and devices - Performance standard - Part 8 : seeded reflective semiconductor optical amplifier devices
  • NF C93-884-9*NF EN 62149-9:2014 Fibre optic active components and devices - Performance standards - Part 9 : seeded reflective semiconductor optical amplifier transceivers
  • NF EN 62149-8:2014 Composants et dispositifs actifs à fibres optiques - Norme de performances - Partie 8 : dispositifs amplificateurs optiques à semiconducteur réfléchissants répartis
  • NF ISO 22197-4:2021 Céramiques techniques - Méthodes d'essai relatives à la performance des matériaux photocatalytiques semi-conducteurs pour la purification de l'air - Partie 4 : élimination du formaldéhyde
  • NF EN 62149-9:2014 Composants et dispositifs actifs à fibres optiques - Normes de performances - Partie 9 : émetteurs-récepteurs amplificateurs optiques à semiconducteur réfléchissants répartis
  • NF ISO 22197-5:2021 Céramiques techniques - Méthodes d'essai relatives à la performance des matériaux photocatalytiques semi-conducteurs pour la purification de l'air - Partie 5 : élimination du mercaptan méthylique
  • NF B44-105*NF ISO 14605:2013 Fine Ceramics (advanced ceramics, advanced technical ceramics) - Light source for testing semiconducting photocatalytic materials used under indoor lighting environment

Korean Agency for Technology and Standards (KATS), semiconductor light

  • KS C IEC 62007-2:2003 Semiconductor optoelectronic devices for fibre optic system applications - Part 2:Measuring methods
  • KS C IEC 62007-2-2003(2018)
  • KS C 6942-1999 General rule of laser diode modules for fiber optic transmission
  • KS C IEC 62007-1:2003 Semiconduct optoelectronic devices for fibre optic system applications ? Part 1:Essential ratings and characteristics
  • KS C IEC 62007-1-2003(2018)
  • KS C 6943-1999 Test methods of laser modules for fiber optic transmission
  • KS L ISO 27447-2011(2016) Fine ceramics (advanced ceramics, advanced technical ceramics)-Test method for antibacterial activity of semiconducting photocatalytic materials
  • KS L ISO 27447-2011(2021) Fine ceramics (advanced ceramics, advanced technical ceramics)-Test method for antibacterial activity of semiconducting photocatalytic materials
  • KS L ISO 27447:2011 Fine ceramics (advanced ceramics, advanced technical ceramics)-Test method for antibacterial activity of semiconducting photocatalytic materials

General Administration of Quality Supervision, Inspection and Quarantine of the People‘s Republic of China, semiconductor light

  • GB/T 31358-2015 General specification for semiconductor lasers
  • GB/T 15167-1994 General specification for light source of semiconductor lasers
  • GB/T 36359-2018 Semiconductor optoelectronic devices.Blank detail specification for lower power light-emitting diodes
  • GB/T 36360-2018 Semiconductor optoelectronic devices.Blank detail specification for middle power light-emitting diodes
  • GB/T 31359-2015 Test methods of semiconductor lasers
  • GB/T 15529-1995 Blank detail specification for LED numeric displays
  • GB/T 15649-1995 Blank detail specification for semiconductor laser diodes
  • GB/T 29299-2012 General specification of semiconductor laser rangefinder
  • GB/T 36356-2018 Technical specification for power light-emitting diode chips
  • GB 15651.4-2017 Semiconductor devices Discrete devices Part 5-4: Optoelectronic devices Semiconductor lasers
  • GB/T 36357-2018 Technical specification for middle power light-emitting diode chips

CZ-CSN, semiconductor light

国家市场监督管理总局、中国国家标准化管理委员会, semiconductor light

  • GB/T 36358-2018 Semiconductor optoelectronic devices—Blank detail specification for power light-emitting diodes

Fujian Provincial Standard of the People's Republic of China, semiconductor light

Professional Standard - Post and Telecommunication, semiconductor light

  • YD/T 2001.2-2011 Semiconductor optoelectronic devices for fibre optic system applications.part 2:measuring methods
  • YD/T 2001.1-2009 Semiconductor optoelectronic devices for fibre optic system applications.Part 1:Specification template for essential rating and characteristics
  • YD/T 701-1993 Test method for semiconductor laser diode assembly
  • YD/T 1687.1-2007 Technical Requirements of High Speed Semiconductor Laser Assembly for Optical Fiber Communication Part 1:2.5Gbit/s Cooled Direct Modulation Semiconductor Laser Assembiy
  • YD/T 1687.2-2007 Technidal Requirements of High Speed Semiconductor Laser Assembly for Optical Fiber Communication Part 2:2.5Gbit/s Uncooled Direct Modulation Semiconductor Laser Assembly

Danish Standards Foundation, semiconductor light

  • DS/EN 62007-2:2009 Semiconductor optoelectronic devices for fibre optic system applications - Part 2: Measuring methods
  • DS/EN 62007-1:2009 Semiconductor optoelectronic devices for fibre optic system applications - Part 1: Specification template for essential ratings and characteristics

ES-UNE, semiconductor light

  • UNE-EN 62007-2:2009 Semiconductor optoelectronic devices for fibre optic system applications -- Part 2: Measuring methods (Endorsed by AENOR in June of 2009.)
  • UNE-EN 62149-8:2014 Fibre optic active components and devices - Performance standards - Part 8: Seeded reflective semiconductor optical amplifier devices (Endorsed by AENOR in August of 2014.)
  • UNE-EN 62149-9:2014 Fibre optic active components and devices - Performance standards - Part 9: Seeded reflective semiconductor optical amplifier transceivers (Endorsed by AENOR in October of 2014.)
  • UNE-EN 62007-1:2015 Semiconductor optoelectronic devices for fibre optic system applications - Part 1: Specification template for essential ratings and characteristics (Endorsed by AENOR in August of 2015.)
  • UNE-EN 62007-1:2015/A1:2022 Semiconductor optoelectronic devices for fibre optic system applications - Part 1: Specification template for essential ratings and characteristics (Endorsed by Asociación Española de Normalización in December of 2022.)
  • UNE-EN 61207-7:2013 Expression of performance of gas analyzers - Part 7: Tuneable semiconductor laser gas analyzers (Endorsed by AENOR in January of 2014.)
  • UNE-EN 61207-7:2013/AC:2015 Expression of performance of gas analyzers - Part 7: Tuneable semiconductor laser gas analyzers (Endorsed by AENOR in September of 2015.)

IET - Institution of Engineering and Technology, semiconductor light

工业和信息化部, semiconductor light

Professional Standard - Medicine, semiconductor light

  • YY 1289-2016 Laser Therapy Equipment Ophthalmic Diode Laser Photocoagulation Instrument
  • YY 0845-2011 Laser therapeutic equipment.Diode laser equipment for photodynamic therapy

Lithuanian Standards Office , semiconductor light

  • LST EN 62007-2-2009 Semiconductor optoelectronic devices for fibre optic system applications - Part 2: Measuring methods (IEC 62007-2:2009)
  • LST EN 62007-1-2015 Semiconductor optoelectronic devices for fibre optic system applications - Part 1: Specification template for essential ratings and characteristics (IEC 62007-1:2015)

International Organization for Standardization (ISO), semiconductor light

  • ISO/TS 17915:2013 Optics and photonics.Measurement method of semiconductor lasers for sensing
  • ISO 17915:2018 Optics and photonics - Measurement method of semiconductor lasers for sensing
  • ISO 14605:2013 Fine ceramics (advanced ceramics, advanced technical ceramics).Light source for testing semiconducting photocatalytic materials used under indoor lighting environment
  • ISO 13125:2013 Fine ceramics (advanced ceramics, advanced technical ceramics) - Test method for antifungal activity of semiconducting photocatalytic materials
  • ISO 19635:2016 Fine ceramics (advanced ceramics, advanced technical ceramics) - Test method for antialgal activity of semiconducting photocatalytic materials
  • ISO 27447:2019 Fine ceramics (advanced ceramics, advanced technical ceramics) — Test method for antibacterial activity of semiconducting photocatalytic materials
  • ISO 27447:2009 Fine ceramics (advanced ceramics, advanced technical ceramics) - Test method for antibacterial activity of semiconducting photocatalytic materials

KR-KS, semiconductor light

  • KS L ISO 10677-2023 Fine ceramics (advanced ceramics, advanced technical ceramics) — Ultraviolet light source for testing semiconducting photocatalytic materials
  • KS L ISO 27447-2023 Fine ceramics (advanced ceramics, advanced technical ceramics) — Test method for antibacterial activity of semiconducting photocatalytic materials
  • KS L ISO 14605-2023 Fine ceramics (advanced ceramics, advanced technical ceramics) — Light source for testing semiconducting photocatalytic materials used under indoor lighting environment

国家药监局, semiconductor light

  • YY/T 1751-2020 Laser treatment equipment semiconductor laser intranasal irradiation therapy instrument

American National Standards Institute (ANSI), semiconductor light

Defense Logistics Agency, semiconductor light

  • DLA SMD-5962-96895-1997 MICROCIRCUIT, DIGITAL, BICMOS, HIGH-SPEED OPTICAL/COPPER TRANSMITTER INTERFACE, MONOLITHIC SILICON
  • DLA SMD-5962-96896-1997 MICROCIRCUIT, DIGITAL, BICMOS, HIGH-SPEED OPTICAL/COPPER RECEIVER INTERFACE, MONOLITHIC SILICON

RO-ASRO, semiconductor light

  • STAS 12258/7-1987 OPTOELECTRONIC SEMICONDIC- TOH DEVICES PHOTOVOLTAIC CELLS Terminology and essential cliarac! eristics
  • STAS 12258/3-1985 Optoelectronic semiconductor devices PHOTOTRANSISTORS Terminology and essential characteristics
  • STAS 12258/2-1984 Optoelectronic semiconductor devices PIIOTODIODES Terminology and essentia] characteristics

中华人民共和国国家质量监督检验检疫总局、中国国家标准化管理委员会, semiconductor light

  • GB/T 15651.4-2017 Semiconductor devices—Discrete devices—Part 5-4:Optoelectronic devices—Semiconductor lasers

Taiwan Provincial Standard of the People's Republic of China, semiconductor light

  • CNS 13805-1997 Method of Measurement for Photoluminescence of Optoelectronic Semiconductor Wafers

(U.S.) Telecommunications Industries Association , semiconductor light

Hebei Provincial Standard of the People's Republic of China, semiconductor light

  • DB13/T 5120-2019 Specifications for DC performance test of FP and DFB semiconductor laser chips for optical communication

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