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Semiconductor light agent

Semiconductor light agent, Total:499 items.

In the international standard classification, Semiconductor light agent involves: Optoelectronics. Laser equipment, Medical equipment, Semiconductor devices, Integrated circuits. Microelectronics, Optics and optical measurements, Fibre optic communications, Applications of information technology, Electronic components in general, Seals, glands, Semiconducting materials, Electrical accessories, Rectifiers. Convertors. Stabilized power supply, Vocabularies, Analytical chemistry, Environmental testing, Ceramics, Aircraft and space vehicles in general, Insulating fluids, Kitchen equipment, Products of the chemical industry, Inorganic chemicals, Materials for aerospace construction, Measurement of force, weight and pressure, Terminology (principles and coordination), Insulating materials, Radiation measurements, Lamps and related equipment, Graphical symbols, Electromechanical components for electronic and telecommunications equipment, Test conditions and procedures in general, Nuclear energy engineering, Products of non-ferrous metals.


British Standards Institution (BSI), Semiconductor light agent

  • BS IEC 60747-5-4:2022 Semiconductor devices - Optoelectronic devices. Semiconductor lasers
  • BS IEC 60747-5-4:2006 Semiconductor devices - Discrete devices - Optoelectronic devices - Semiconductor lasers
  • 19/30404095 DC BS EN IEC 60747-5-4. Semiconductor devices. Part 5-4. Optoelectronic devices. Semiconductor lasers
  • 23/30473272 DC BS IEC 60747-5-4 AMD 1. Semiconductor devices - Part 5-4. Optoelectronic devices. Semiconductor lasers
  • BS EN IEC 60747-5-5:2020 Semiconductor devices. Optoelectronic devices. Photocouplers
  • BS IEC 60747-14-5:2010 Semiconductor devices - Semiconductor sensors - PN-junction semiconductor temperature sensor
  • BS EN 62007-2:2000 Semiconductor optoelectronic devices for fibre optic system applications - Measuring methods
  • BS EN 62007-2:2009 Semiconductor optoelectronic devices for fibre optic system applications - Measuring methods
  • PD IEC TR 61292-9:2023 Tracked Changes. Optical amplifiers. Semiconductor optical amplifiers (SOAs)
  • BS IEC 60747-14-4:2011 Semiconductor devices. Discrete devices. Semiconductor accelerometers
  • BS IEC 60747-14-2:2001 Discrete semiconductor devices and integrated circuits - Semiconductor devices - Semiconductor sensors - Hall elements
  • BS IEC 60747-14-2:2000 Discrete semiconductor devices and integrated circuits - Semiconductor devices - Semiconductor sensors - Hall elements
  • BS IEC 60747-14-3:2009 Semiconductor devices - Semiconductor sensors - Pressure sensors
  • BS ISO 17915:2018 Optics and photonics. Measurement method of semiconductor lasers for sensing
  • BS EN 62779-1:2016 Semiconductor devices. Semiconductor interface for human body communication. General requirements
  • BS EN 60747-5-5:2011 Semiconductor devices. Discrete devices. Optoelectronic devices. Photocouplers
  • BS EN 60747-15:2004 Discrete semiconductor devices. Isolated power semiconductor devices
  • BS IEC 60747-14-1:2001 Discrete semiconductor devices and integrated circuits - Semiconductor devices - Semiconductor sensors - General and classification - Sensor generals and classification for semiconductor sensors
  • BS IEC 60747-6:2000 Discrete semiconductor devices and integrated circuits - Thyristors
  • BS IEC 60747-6:2001 Discrete semiconductor devices and integrated circuits - Thyristors
  • BS EN 62007-1:2000 Semiconductor optoelectronic devices for fibre optic system applications - Essential ratings and characteristics
  • BS IEC 60747-18-4:2023 Semiconductor devices - Semiconductor bio sensors. Evaluation method of noise characteristics of lens-free CMOS photonic array sensors
  • BS IEC 60747-14-1:2010 Semiconductor devices - Semiconductor sensors - Generic specification for sensors
  • BS EN 60747-15:2012 Semiconductor devices. Discrete devices. Isolated power semiconductor devices
  • BS IEC 62779-4:2020 Semiconductor devices. Semiconductor interface for human body communication - Capsule endoscope
  • BS IEC 60747-18-2:2020 Semiconductor devices. Semiconductor bio sensors. Evaluation process of lens-free CMOS photonic array sensor package modules
  • BS IEC 60747-18-5:2023 Semiconductor devices - Semiconductor bio sensors. Evaluation method for light responsivity characteristics of lens-free CMOS photonic array sensor package modules by incident angle of light
  • BS IEC 62951-4:2019 Semiconductor devices. Flexible and stretchable semiconductor devices - Fatigue evaluation for flexible conductive thin film on the substrate for flexible semiconductor devices
  • BS EN 61207-7:2014 Expression of performance of gas analyzers. Tuneable semiconductor laser gas analyzers
  • BS EN 61207-7:2013 Expression of performance of gas analyzers. Tuneable semiconductor laser gas analyzers
  • BS EN 62779-2:2016 Semiconductor devices. Semiconductor interface for human body communication. Characterization of interfacing performances
  • BS IEC 60747-1:2006+A1:2010 Semiconductor devices - General
  • PD IEC TR 60747-5-12:2021 Semiconductor devices. Optoelectronic devices. Light emitting diodes. Test method of LED efficiencies
  • PD IEC/TR 63133:2017 Semiconductor devices. Scan based ageing level estimation for semiconductor devices
  • BS EN 62416:2010 Semiconductor devices - Hot carrier test on MOS transistors
  • BS EN IEC 63287-1:2021 Semiconductor devices. Generic semiconductor qualification guidelines - Guidelines for IC reliability qualification
  • BS IEC 60747-5-1:1998 Discrete semiconductor devices and integrated circuits. Optoelectronic devices. General
  • BS EN 60747-5-1:1998 Discrete semiconductor devices and integrated circuits. Optoelectronic devices. General
  • BS EN 60747-5-1:2001 Discrete semiconductor devices and integrated circuits - Optoelectronic devices - General
  • BS EN 62779-3:2016 Semiconductor devices. Semiconductor interface for human body communication. Functional type and its operational conditions
  • 18/30363340 DC BS IEC 62779-4. Semiconductor devices. Semiconductor interface for human body communication. Part 4. Semiconductor interface for capsule endoscopy using human body communication
  • BS IEC 60747-18-3:2019 Semiconductor devices. Semiconductor bio sensors. Fluid flow characteristics of lens-free CMOS photonic array sensor package modules with fluidic system
  • BS IEC 60747-18-1:2019 Semiconductor devices. Semiconductor bio sensors. Test method and data analysis for calibration of lens-free CMOS photonic array sensors
  • BS IEC 62951-7:2019 Semiconductor devices. Flexible and stretchable semiconductor devices - Test method for characterizing the barrier performance of thin film encapsulation for flexible organic semiconductor
  • BS IEC 60747-5-8:2019 Semiconductor devices. Optoelectronic devices. Light emitting diodes. Test method of optoelectronic efficiencies of light emitting diodes
  • 13/30264596 DC BS EN 60747-14-7. Semiconductor devices. Part 14-7. Semiconductor sensor. Flow meter
  • 18/30350443 DC BS EN 60747-5-5. Semiconductor devices. Part 5-5. Optoelectronic devices. Photocouplers
  • 19/30392174 DC BS EN 60747-5-6. Semiconductor devices. Part 5-6. Optoelectronic devices. Light emitting diodes
  • BS IEC 60747-8-4:2004 Discrete semiconductor devices - Metal-oxide semiconductor field-effect transistors (MOSFETs) for power switching applications
  • BS EN IEC 62969-1:2018 Semiconductor devices. Semiconductor interface for automotive vehicles. General requirements of power interface for automotive vehicle sensors
  • PD IEC TR 63378-1:2021 Thermal standardization on semiconductor packages. Thermal resistance and thermal parameter of BGA, QFP type semiconductor packages
  • BS IEC 60747-5-3:1998 Discrete semiconductor devices and integrated circuits. Optoelectronic devices. Measuring methods
  • BS EN 60747-5-3:1998 Discrete semiconductor devices and integrated circuits. Optoelectronic devices. Measuring methods
  • BS EN 60747-5-3:2001 Discrete semiconductor devices and integrated circuits - Optoelectronic devices - Measuring methods
  • BS EN 60749-18:2003 Semiconductor devices - Mechanical and climatic test methods - Ionizing radiation (total dose)
  • BS EN 62007-1:2009 Semiconductor optoelectronic devices for fibre optic system applications - Specification template for essential ratings and characteristics
  • BS EN 62007-1:2015 Semiconductor optoelectronic devices for fibre optic system applications. Specification template for essential ratings and characteristics
  • BS IEC 60748-11:2000 Semiconductor devices - Integrated circuits - Sectional specification for semiconductor integrated circuits excluding hybrid circuits
  • BS IEC 60748-11:1991 Semiconductor devices. Integrated circuits. Sectional specification for semiconductor integrated circuits excluding hybrid circuits
  • BS 3934-1:1992 Mechanical standardization of semiconductor devices - Recommendations for the preparation of drawings of semiconductor devices
  • BS IEC 62951-5:2019 Semiconductor devices. Flexible and stretchable semiconductor devices - Test method for thermal characteristics of flexible materials
  • 13/30264591 DC BS EN 60747-14-6. Semiconductor devices. Part 14-6. Semiconductor sensor. Humidity sensor
  • BS IEC 62951-6:2019 Semiconductor devices. Flexible and stretchable semiconductor devices - Test method for sheet resistance of flexible conducting films

Military Standard of the People's Republic of China-General Armament Department, Semiconductor light agent

  • GJB 33/16-2011 Semiconductor optoelectronic device.Detail specification for type 3DU32 semiconductor phototransistor
  • GJB 33/17-2011 Semiconductor optoelectronic device.Detail specification for type GO11 semiconductor photocoupler
  • GJB/Z 41.3-1993 Military semiconductor discrete device series spectrum semiconductor optoelectronic devices
  • GJB 33/18-2011 Semiconductor optoelectronic device.Detail specification for type GO417 bidirectional analog switch semiconductor photocoupler
  • GJB 8121-2013 General specification for semiconductor optoelectronic assembly
  • GJB 8120-2013 General specification for semiconductor optoelectronic module
  • GJB 3519-1999 General Specification for Semiconductor Laser Diodes
  • GJB 33/15-2011 Semiconductor optoelectronic device.Detail specification for type BT401 semiconductor infrared-emitting diode
  • GJB 8119-2013 General specification for semiconductor optoelectronic device
  • GJB 2146A-2011 General specification for semiconductor light-emitting diode devices
  • GJB 8190-2015 General specification for semiconductor solid-state light sources for aircraft exterior lighting
  • GJB 33/20-2011 Semiconductor optoelectronic device.Detail specification for type GH302 photocoupler
  • GJB 33/22-2011 Semiconductor optoelectronic device.Detail specification for type GO103 photocoupler
  • GJB 33/21-2011 Semiconductor optoelectronic device.Detail specification for GD310A series photocopier
  • GJB 33/23-2011 Semiconductor optoelectronic device.Detail specification for type GH3201Z-4 photocoupler
  • GJB 33/19-2011 Semiconductor optoelectronic device.Detail specification for type GH302-4 photocoupler
  • GJB 5018-2001 General requirements for screening and acceptance of semiconductor optoelectronic devices
  • GJB 762.2-1989 Semiconductor device radiation hardening test method gamma total dose irradiation test

International Electrotechnical Commission (IEC), Semiconductor light agent

  • IEC 60747-5-4:2022 Semiconductor devices - Part 5-4: Optoelectronic devices - Semiconductor lasers
  • IEC 60747-5-4:2006 Semiconductor devices - Discrete devices - Part 5-4: Optoelectronic devices - Semiconductor lasers
  • IEC TR 61292-9:2013 Optical amplifiers - Part 9: Semiconductor optical amplifiers (SOAs)
  • IEC TR 61292-9:2023 RLV Optical amplifiers - Part 9: Semiconductor optical amplifiers (SOAs)
  • IEC TR 61292-9:2023 Optical amplifiers - Part 9: Semiconductor optical amplifiers (SOAs)
  • IEC 60747-14-5:2010 Semiconductor devices - Part 14-5: Semiconductor sensors - PN-junction semiconductor temperature sensor
  • IEC 60747-5-7:2016 Semiconductor devices - Part 5-7: Optoelectronic devices - Photodiodes and phototransistors
  • IEC 60747-5-6:2016 Semiconductor devices - Part 5-6: Optoelectronic devices - Light emitting diodes
  • IEC 60747-5-6:2021 Semiconductor devices - Part 5-6: Optoelectronic devices - Light emitting diodes
  • IEC 60747-14-2:2000 Semiconductor devices - Part 14-2: Semiconductor sensors; Hall elements
  • IEC 62007-2:1997 Semiconductor optoelectronic devices for fibre optic system applications - Part 2: Measuring methods
  • IEC 60747-5-6:2021 RLV Semiconductor devices - Part 5-6: Optoelectronic devices - Light emitting diodes
  • IEC 60747-5-5:2020 Semiconductor devices - Part 5-5: Optoelectronic devices - Photocouplers
  • IEC 60747-14-1:2000 Semiconductor devices - Part 14-1: Semiconductor sensors; General and classification
  • IEC 60747-14-4:2011 Semiconductor devices - Discrete devices - Part 14-4: Semiconductor accelerometers
  • IEC 60747-14-3:2001 Semiconductor devices - Part 14-3: Semiconductor sensors; Pressure sensors
  • IEC 60747-15:2003 Discrete semiconductor devices - Part 15: Isolated power semiconductor devices
  • IEC 60747-14-3:2009 Semiconductor devices - Part 14-3: Semiconductor sensors - Pressure sensors
  • IEC 62779-4:2020 Semiconductor devices - Semiconductor interface for human body communication - Part 4: Capsule endoscope
  • IEC 62951-4:2019 Semiconductor devices - Flexible and stretchable semiconductor devices - Part 4: Fatigue evaluation for flexible conductive thin film on the substrate for flexible semiconductor devices
  • IEC 62007-2:1999 Semiconductor optoelectronic devices for fibre optic system applications - Part 2: Measuring methods
  • IEC 60747-18-2:2020 Semiconductor devices - Part 18-2: Semiconductor bio sensors - Evaluation process of lens-free CMOS photonic array sensor package modules
  • IEC 60747-14-1:2010 Semiconductor devices - Part 14-1: Semiconductor sensors - Generic specification for sensors
  • IEC 60747-15:2010 Semiconductor devices - Discrete devices - Part 15: Isolated power semiconductor devices
  • IEC 60747-5-5:2007/AMD1:2013 Semiconductor devices - Discrete devices - Part 5-5: Optoelectronic devices - Photocouplers
  • IEC 60747-5-5:2013 Semiconductor devices.Discrete devices.Part 5-5: Optoelectronic devices.Photocouplers
  • IEC 60191-1:1966 Mechanical standardization of semiconductor devices. Part 1 : Preparation of drawings of semiconductor devices
  • IEC 62417:2010 Semiconductor devices - Mobile ion tests for metal-oxide semiconductor field effect transistors (MOSFETs)
  • IEC 60747-18-4:2023 Semiconductor devices - Part 18-4: Semiconductor bio sensors - Evaluation method of noise characteristics of lens-free CMOS photonic array sensors
  • IEC 60747-18-5:2023 Semiconductor devices - Part 18-5: Semiconductor bio sensors - Evaluation method for light responsivity characteristics of lens-free CMOS photonic array sensor package modules by incident angle of lig
  • IEC 62007-2/AMD1:1998 Semiconductor optoelectronic devices for fibre optic system applications - Part 2: Measuring methods; Amendment 1
  • IEC 62007-1:1999 Semiconductor optoelectronic devices for fibre optic system applications - Part 1: Essential ratings and characteristics
  • IEC 60747-5-5:2007 Semiconductor devices - Discrete devices - Part 5-5: Optoelectronic devices - Photocouplers
  • IEC 62007-2:2009 Semiconductor optoelectronic devices for fibre optic system applications - Part 2: Measuring methods
  • IEC 61207-7:2013 Expression of performance of gas analyzers - Part 7: Tuneable semiconductor laser gas analyzers
  • IEC 62779-3:2016 Semiconductor devices - Semiconductor interface for human body communication - Part 3: Functional type and its operational conditions
  • IEC 60747-18-1:2019 Semiconductor devices - Part 18-1: Semiconductor bio sensors - Test method and data analysis for calibration of lens-free CMOS photonic array sensors
  • IEC 60747-5-5:2007+AMD1:2013 CSV Semiconductor devices - Discrete devices - Part 5-5: Optoelectronic devices - Photocouplers
  • IEC 63287-1:2021 Semiconductor devices - Generic semiconductor qualification guidelines - Part 1: Guidelines for IC reliability qualification
  • IEC 60747-18-3:2019 Semiconductor devices - Part 18-3: Semiconductor bio sensors - Fluid flow characteristics of lens-free CMOS photonic array sensor package modules with fluidic system

General Administration of Quality Supervision, Inspection and Quarantine of the People‘s Republic of China, Semiconductor light agent

  • GB/T 15167-1994 General specification for light source of semiconductor lasers
  • GB/T 31358-2015 General specification for semiconductor lasers
  • GB 15651.4-2017 Semiconductor devices Discrete devices Part 5-4: Optoelectronic devices Semiconductor lasers
  • GB/T 31359-2015 Test methods of semiconductor lasers
  • GB 12565-1990 Sectional Specification for Semiconductor Devices and Optoelectronic Devices
  • GB/T 15529-1995 Blank detail specification for LED numeric displays
  • GB/T 15649-1995 Blank detail specification for semiconductor laser diodes
  • GB/T 29299-2012 General specification of semiconductor laser rangefinder
  • GB/T 36356-2018 Technical specification for power light-emitting diode chips
  • GB/T 15651.6-2023 Semiconductor Devices Part 5-6: Optoelectronic Devices Light Emitting Diodes
  • GB/T 3859.2-1993 Semiconductor convertors.Application guide
  • GB/T 14264-1993 Semiconductor materials-Terms and definitions
  • GB/T 14264-2009 Semiconductor materials-Terms and definitions
  • GB/T 36357-2018 Technical specification for middle power light-emitting diode chips
  • GB/T 21548-2008 Methods of measurement of the high speed semiconductor lasers directly modulated for optical fiber communication systems
  • GB/T 20522-2006 Semiconductor devices. Part 14-3: Semiconductor sensors. Pressure sensors
  • GB/T 20521-2006 Semiconductor devices. Part 14-1: Semiconductor sensors. General and classification
  • GB/T 29856-2013 Characterization of semiconducting single-walled carbon nanotubes using near infrared photoluminescence spectroscopy
  • GB/T 36359-2018 Semiconductor optoelectronic devices.Blank detail specification for lower power light-emitting diodes
  • GB/T 36360-2018 Semiconductor optoelectronic devices.Blank detail specification for middle power light-emitting diodes
  • GB/T 12565-1990 Semiconductor devices--Sectional specification for optoelectronic devices
  • GB/T 31469-2015 Semiconductor materials cutting fluid
  • GB/T 8750-1997 Gold wire for semiconductor devices lead bonding
  • GB/T 15872-1995 Power supply interface for semiconductor equipment
  • GB/T 7678-1987 Semiconductor self-commutated convertors
  • GB/T 15872-2013 Power supply interface for semiconductor equipment
  • GB/T 3859.4-2004 Semiconductor converter-Self-commutated semiconductor converters including direct d.c.converters
  • GB/T 11685-2003 Measurement procedures for semiconductor X-ray detector system and semiconductor X-ray energy spectrometers
  • GB/T 8750-2014 Gold bonding wire for semiconductor package
  • GB 10292-1988 Semiconductor rectifier equipments for telecommunicat-ions

Group Standards of the People's Republic of China, Semiconductor light agent

Jilin Provincial Standard of the People's Republic of China, Semiconductor light agent

RU-GOST R, Semiconductor light agent

  • GOST 24458-1980 Semiconductor optoelectronic couplers. Essential parameters
  • GOST R 50471-1993 Semiconductor photoemitters. Measuring method for halfintensity angle
  • GOST 27299-1987 Semiconductor optoelectronic devices. Terms, definitions and letter symbols of parameters
  • GOST R 59605-2021 Optics and photonics. Semiconducting photoelectric detectors. Photoelectric and photoreceiving devices. Terms and definitions
  • GOST 17704-1972 Semiconductor devices. Photoelectric receivers of radiant energy. Classification and system designations
  • GOST 21934-1983 Semiconducting photoelectric detectors and receiving photoelectric devices. Terms and definitions
  • GOST 20766-1975 Ionizing radiation semiconductor spectrometer detectors. Types and basic parameters
  • GOST R 57439-2017 Semiconductor devices. Basic dimensions
  • GOST 11630-1984 Semiconductor devices. General specification
  • GOST 18472-1988 Semiconductor devices. Basic dimensions
  • GOST R IEC 61674-2006 Medical electrical equipment. Dosimeters with ionization chambers and/or semi-conductor detectors as used in X-ray diagnostic imaging
  • GOST 17772-1988 Semiconducting photoelectric detectors and receiving photoelectric devices. Methods of measuring photoelectric parameters and determining characteristics

中华人民共和国国家质量监督检验检疫总局、中国国家标准化管理委员会, Semiconductor light agent

  • GB/T 15651.4-2017 Semiconductor devices—Discrete devices—Part 5-4:Optoelectronic devices—Semiconductor lasers
  • GB/T 34971-2017 Guide for gaseous effluent handling in semiconductor industry
  • GB/T 36005-2018 Measuring methods of optical radiation safety for semiconductor lighting equipments and systems

Professional Standard - Electron, Semiconductor light agent

  • SJ 50033/109-1996 Semiconductor optoelectronic devices.Detail specification for types GJ9031T and GJ9032T and GJ9034T semiconductor laser diodes
  • SJ/T 11397-2009 Phosphors for light emitting diodes
  • SJ 20642-1997 Semiconductor opto-electronic module General specification for
  • SJ 20786-2000 General specification for semiconductor opto-electronic assembly
  • SJ 2218-1982 Semiconductor photocouplers in the diode mode
  • SJ 2219-1982 Semiconductor photocouplers in the transistor mode
  • SJ 20072-1992 Detail specification for semiconductor opto-couplers for type GH24,GH25 and GH26
  • SJ 2220-1982 Semiconductor photocouplers in the Darlington transistor mode
  • SJ 2558-1984 Detail specification for semiconductor light emitting numeric displays,Type SM1~18
  • SJ 2684-1986 Physical Demensions For Light Emitting Device Of Semiconductor
  • SJ/T 2215-2015 Measuring methods for semiconductor photocouplers
  • SJ 2247-1982 Outlines dimension for semiconductor optoelectronic devices
  • SJ 2749-1987 Method of measurement for semiconductor laser diodes
  • SJ 2750-1987 Outline dimensions for semiconductor laser diodes
  • SJ 2214.1-1982 General procedures of measurement for semiconductor photodiodes and phototransistors
  • SJ/T 11394-2009 Measure methods of semiconductor light emitting diodes
  • SJ/T 2214-2015 Measuring methods for semiconductor photodiode and phototransistor
  • SJ/T 11856.3-2022 Technical Specifications for Semiconductor Laser Chips for Optical Fiber Communications Part 3: Electric Absorption Modulated Semiconductor Laser Chips for Light Sources
  • SJ 2355.1-1983 General procedures of measurement for light-emitting deivces
  • SJ 2215.1-1982 General procedures of measurement for semiconductor photocouplers
  • SJ/T 11856.2-2022 Technical Specifications for Semiconductor Laser Chips for Optical Fiber Communications Part 2: Vertical Cavity Surface Emitting Semiconductor Laser Chips for Light Sources
  • SJ 50033.40-1994 Detail specification for type GT11 semiconductor sililcon NPN photo-transistor
  • SJ 50033/4-1994 Semiconductor discrete device.Detail specification for semiconductor red light emitting diodes for type GF 111 of GP and GT classes
  • SJ 50033/6-1994 Semiconductor discrete device.Detail specification for semiconductor light green emitting diodes for type GF 411 of GP and GT classes
  • SJ 50033/5-1994 Semiconductor discrete device.Detail specification for semiconductor yellow light emitting diodes for type GF 311 of GP and GT classes
  • SJ 50033/3-1994 Semiconductor discrete device.Detail specification for semiconductor opto-couplers for type GH21,GH22 and GH23 of GP,GT and GCT classes
  • SJ 2214.10-1982 Method of measurement for light current of semiconductor photodiodes and phototransistors
  • SJ 20642.5-1998 Semiconductor optoelectronic module Detail specification for type GH82 opto-couplers
  • SJ 20642.4-1998 Semiconductor optoelectronic module Detail specification for type GH81 opto-couplers
  • SJ 20642.6-1998 Semiconductor opto-electronic module Detail specification for type GH83 opto-couplers
  • SJ/T 11402-2009 Technical specification of semiconductor laser chip used in optical fiber communication
  • SJ/T 11399-2009 Measurement methods for chips of light emitting diodes
  • SJ/T 11401-2009 Series program for semiconductor light emitting diodes
  • SJ 50033/111-1996 Semiconductor optoelectronic devices.Delail specification for type GT16 Si.NPN phototransistor
  • SJ 2355.5-1983 Method of measurement for luminous intensity and half-intensity angle of light-emitting devices
  • SJ/Z 3206.13-1989 General rules for emision spectrum analysis for semiconductor materials
  • SJ 50033/101-1995 Detail specification for semiconductor laser diode modules for type GJ1325
  • SJ 50033/35-1994 Detail specification for type GH30 semiconductor high speed optocoupler
  • SJ 2355.7-1983 Method of measurement for peak emission wavelength and spectral radiation bandwidth of light-emitting devices
  • SJ/T 11856.1-2022 Technical Specifications for Semiconductor Laser Chips for Optical Fiber Communications Part 1: Fabry-Perot Type and Distributed Feedback Type Semiconductor Laser Chips for Light Sources
  • SJ 50033/112-1996 Scmiconductor optoelectronic devices.Detail specification for type GD3251Y photodiodes
  • SJ 2355.6-1983 Method of measurement for luminous flux of light-emitting devices
  • SJ 50033/113-1996 Semiconductor optoelectronic devices.Detail specification for type GD3252Y photodiodes
  • SJ 2433-1984 Bonding sheet for semiconductor tubes
  • SJ 2214.3-1982 Method of measurement for dark current of semiconductor photodiodes
  • SJ 2214.5-1982 Method of measurement for junction capacitance of semiconductor photodiodes
  • SJ 2214.8-1982 Method of measurement for dark current voltage of semiconductor phototransistors
  • SJ 2658.1-1986 Methods of measurement for semiconductor infrared diodes General rules
  • SJ/T 11398-2009 Technical specification for power light-emitting diode chips
  • SJ 20642.3-1998 Semiconductor opto-electronic module Detail specification for type GD83 PIN-FET opto-receiver module
  • SJ 20644.1-2001 Semiconductor optoelectronic devices Detail specification for type GD3550Y PIN photodiode
  • SJ 20644.2-2001 Semiconductor optoelectronic devices Detail specification for type GD101 PIN photodiode
  • SJ 20642.2-1998 Semiconductor opto-electronic module Detail specification for type GD82 PIN-FET opto-receiver module
  • SJ 20744-1999 General rule of infrared absorption spectral analysis for the impurity concentration in semiconductor materials
  • SJ/T 11395-2009 Semiconductor lighting terminology
  • SJ 2214.2-1982 Method of measurement for forward voltage of semiconductor photodiodes
  • SJ 2214.7-1982 Method of measurement for saturation voltage of semiconductor phototransistors
  • SJ 20957-2006 General specification for large power semiconductor laser diode array
  • SJ 20786.1-2002 Semiconductor photoelectric assembly Detail specification for miniature duplex photoelectric localizer for type CBGS 2301
  • SJ 50033/136-1997 Semiconductor optoelectronic devices.Detail specification for red light emitting diode for type GF116
  • SJ 50033/143-1999 Semiconductor optoelectronic devices.Detail specification for type GF1120 red emitting diode
  • SJ 50033/137-1997 Semiconductor optoelectronic devices.Detail specification for orange-red light emitting diode for type GF216
  • SJ 20642.1-1998 Semiconductor opto-electronic module Detail specification for type GD81 PIN-FET opto-receiver module
  • SJ/T 11405-2009 Semiconductor optoelectronic devices for fibre optic system applications.Part 2:Measuring methods
  • SJ 50033/139-1998 Semiconductor optoelectronic devices.Detail specification for green light-emitting diode for type GF4111
  • SJ 50033/138-1998 Semiconductor optoelectronic devices.Detail specification for yellow light-emitting diode for type GF318
  • SJ 50033/58-1995 Semiconductor optoelectronic device Detail specification for green light emitting diode for type GF413
  • SJ/T 11393-2009 Semiconductor optoelectronic devices-Blank detail specification for power light-emitting diodes
  • SJ 50033/142-1999 Semiconductor optoelectronic devices.Detail specification for type GF4112 green emitting diode
  • SJ 50033/57-1995 Semiconductor optoelectronic device Detail specification for red light emitting diode for type GF115
  • SJ/T 11866-2022 Semiconductor optoelectronic devices - Detailed specifications for silicon substrate white light power light emitting diodes
  • SJ/T 11400-2009 Semiconductor optoeletronic devices-Blank detail specification for lower-power light-emitting diodes
  • SJ 2215.6-1982 Method of measurement for junction capacitance of semiconductor photocouplers (diodes)
  • SJ 2215.8-1982 Method of measurement for output saturation voltage of semiconductor photocouplers (diodes)
  • SJ/T 10414-2015 Solder for semiconductor device
  • SJ/T 10414-1993 Solder for semicoductor device
  • SJ/T 10535-1994 Tungsten boat for semiconductor devices
  • SJ 50033/99-1995 Semiconductor optoelectronic devices.Detail specification for o/G double colour light emitting diode for type GF511
  • SJ 20642.7-2000 Semiconductor opto-electronic devices Detail specification for type GR1325J light emitting diode module
  • SJ/T 11817-2022 Blank detailed specification for light-emitting diodes for semiconductor optoelectronic devices, filament lamps
  • SJ 2658.12-1986 Methods of measurement for semiconductor infrared diodes Methods of measurement for peak emission wavelength and spectral half width
  • SJ 2215.14-1982 Method of measurement for input-to-output isolation voltage of semiconductor photocouplers
  • SJ 2215.3-1982 Method of measurement for forward current of semiconductor photocouplers (diodes)
  • SJ 2214.4-1982 Method of measurement for reverse break-down voltage of semiconductor photodiodes
  • SJ 2215.4-1982 Method of measurement for reverse current of semiconductor photocouplers (diodes)
  • SJ 2215.10-1982 Method of measurement for direct current transfer ratio of semiconductor photocouplers
  • SJ 2215.12-1982 Method of measurement for input-to-output capacitance of semiconductor photocouplers
  • SJ 50033/114-1996 Semiconductor optoelectronic devices.Detail specification for type GD3283Y position sensitive detector
  • SJ 2215.2-1982 Method of measurement for forward voltage of semiconductor photocouplers (diodes)
  • SJ 2215.13-1982 Method of measurement for input-to-output isolation resistance of semiconductor photocouplers
  • SJ 2355.4-1983 Methods of measurement for junction capacitance of light-emitting devices
  • SJ/Z 9021.1-1987 Mechanical standardization of semiconductor components Part 1 Preparation of drawings of semiconductor components
  • SJ 2658.6-1986 Methods of measurement for semiconductor infrared diodes Methods of measurement for output optical power
  • SJ 2355.3-1983 Method of measurement for reverse current of light-emitting devices
  • SJ 2355.2-1983 Method of measurement for forward voltage drop of light-emitting devices
  • SJ 50033/140-1999 Semiconductor discrete devices Detail specification for type 3DA502 silicon microwave pulse power transistor

Fujian Provincial Standard of the People's Republic of China, Semiconductor light agent

Taiwan Provincial Standard of the People's Republic of China, Semiconductor light agent

  • CNS 13805-1997 Method of Measurement for Photoluminescence of Optoelectronic Semiconductor Wafers
  • CNS 7011-1981 Numbering of Electrodes in Multiple Electrode Semiconductor Devices and Designation of Units in Multiple Unit Semiconductor Devices

HU-MSZT, Semiconductor light agent

IET - Institution of Engineering and Technology, Semiconductor light agent

Korean Agency for Technology and Standards (KATS), Semiconductor light agent

Professional Standard - Medicine, Semiconductor light agent

  • YY 1289-2016 Laser Therapy Equipment Ophthalmic Diode Laser Photocoagulation Instrument
  • YY 0845-2011 Laser therapeutic equipment.Diode laser equipment for photodynamic therapy
  • YY/T 0998-2015 Semiconductor heating and/or cooling therapy equipment

CZ-CSN, Semiconductor light agent

Defense Logistics Agency, Semiconductor light agent

工业和信息化部, Semiconductor light agent

  • SJ/T 2749-2016 Semiconductor Laser Diode Test Methods
  • QB/T 5369-2019 Semiconductor refrigeration equipment
  • SJ/T 11586-2016 Test method for 10KeV low-energy X-ray total dose irradiation of semiconductor devices
  • SJ/T 11577-2016 SJ/T 11394-2009 "Semiconductor Light Emitting Diode Test Methods" Application Guide

RO-ASRO, Semiconductor light agent

  • STAS 12258/3-1985 Optoelectronic semiconductor devices PHOTOTRANSISTORS Terminology and essential characteristics
  • STAS 12258/7-1987 OPTOELECTRONIC SEMICONDIC- TOH DEVICES PHOTOVOLTAIC CELLS Terminology and essential cliarac! eristics
  • STAS 12258/2-1984 Optoelectronic semiconductor devices PIIOTODIODES Terminology and essentia] characteristics
  • STAS 12258/4-1986 Optoelectronic semiconductor devices LIGHT EMITTING DIODES Terminology and main characteristics
  • STAS 12258/5-1986 OPTOELECTRONIG SEMICONDUCTOR DEVICES DISPLAYS Terminology and essential characteristres
  • STAS 12258/1-1984 OPTOELECTRONIC SEMICONDUCTOR DEVICES General terminology and nomencla- ture of general basic parameters
  • STAS 1590/10-1974 SEMICONDUCTOR DEVICES Graphical symbols
  • STAS 6360-1974 SEMICONDUCTOR MATERIALS AND DEVICES Terminology

International Organization for Standardization (ISO), Semiconductor light agent

  • ISO/TS 17915:2013 Optics and photonics.Measurement method of semiconductor lasers for sensing
  • ISO 17915:2018 Optics and photonics - Measurement method of semiconductor lasers for sensing

Association Francaise de Normalisation, Semiconductor light agent

  • NF C86-503:1986 Semiconductor devices. Harmonized system of quality assessment for electronic components. Phototransistors, photodarlington transistors and phototrasistor-arrays. Blank detail specification CECC 20 003.
  • NF C96-005-5*NF EN IEC 60747-5-5:2020 Semiconductor devices - Part 5-5 : optoelectronic devices - Photocouplers
  • NF EN IEC 60747-5-5:2020 Dispositifs à semiconducteurs - Partie 5-5 : dispositifs optoélectroniques - Photocoupleurs
  • NF C93-801-2*NF EN 62007-2:2009 Semiconductor optoelectronic devices for fibre optic system applications - Part 2 : measuring methods
  • NF C96-015:2005 Discrete semiconductor devices - Part 15: isolated power semiconductor devices
  • NF C96-779-1*NF EN 62779-1:2016 Semiconductor devices - Semiconductor interface for human body communication - Part 1 : general requirements
  • NF ISO 10677:2011 Céramiques techniques - Sources lumineuses UV destinée aux essais des matériaux photocatalytiques semi-conducteurs
  • NF EN 60747-15:2013 Dispositifs à semiconducteurs - Dispositifs discrets - Partie 15 : dispositifs de puissance à semiconducteurs isolés
  • NF C53-221:1980 Semiconductor self-commutated convertors.
  • NF C96-015*NF EN 60747-15:2013 Semiconductor devices - Discrete devices - Part 15 : isolated power semiconductor devices
  • NF C96-005-5/A1*NF EN 60747-5-5/A1:2015 Semiconductor devices - Discrete devices - Part 5-5 : optoelectronic devices - Photocouplers
  • NF C96-005-5*NF EN 60747-5-5:2012 Semiconductor devices - Discrete devices - Part 5-5 : optoelectronic devices - Photocouplers
  • NF EN 62007-2:2009 Dispositifs optoélectroniques à semiconducteurs pour application dans les systèmes à fibres optiques - Partie 2 : méthodes de mesure
  • XP CEN/TS 16599:2014 Photocatalyse - Détermination des conditions d'irradiation pour tester les propriétés photocatalytiques de matériaux semi-conducteurs
  • NF EN 62417:2010 Dispositifs à semiconducteurs - Essais d'ions mobiles pour transistors à semiconducteur à oxyde métallique à effet de champ (MOSFET)
  • NF EN 62779-1:2016 Dispositifs à semiconducteurs - Interface à semiconducteurs pour les communications via le corps humain - Partie 1 : exigences générales
  • NF C80-203*NF EN 62417:2010 Semiconductor devices - Mobile ion tests for metal-oxide semiconductor field effect transistors (MOSFETs).
  • NF C96-779-2*NF EN 62779-2:2016 Semiconductor devices - Semiconductor interface for human body communication - Part 2 : characterization of interfacing performances
  • NF C46-251-7*NF EN 61207-7:2014 Expression of performance of gas analyzers - Part 7 : tunable semiconductor laser gas analyzers
  • NF C96-779-3*NF EN 62779-3:2016 Semiconductor devices - Semiconductor interface for human body communication - Part 3 : functional type and its operational conditions
  • NF EN 62779-2:2016 Dispositifs à semiconducteurs - Interface à semiconducteurs pour les communications via le corps humain - Partie 2 : caractérisation des performances d'interfaçage
  • NF ISO 14605:2013 Céramiques techniques - Sources lumineuses destinées aux essais des matériaux photocatalytiques semi-conducteurs dans un environnement d'éclairage intérieur
  • NF C96-287-1*NF EN IEC 63287-1:2021 Semiconductor devices - Generic semiconductor qualification guidelines - Part 1 : guidelines for IC reliability qualification
  • NF EN 61207-7:2014 Expression des performances des analyseurs de gaz - Partie 7 : analyseurs de gaz laser à semiconducteurs accordables

Professional Standard - Post and Telecommunication, Semiconductor light agent

  • YD/T 701-1993 Test method for semiconductor laser diode assembly
  • YD/T 1687.1-2007 Technical Requirements of High Speed Semiconductor Laser Assembly for Optical Fiber Communication Part 1:2.5Gbit/s Cooled Direct Modulation Semiconductor Laser Assembiy
  • YD/T 1687.2-2007 Technidal Requirements of High Speed Semiconductor Laser Assembly for Optical Fiber Communication Part 2:2.5Gbit/s Uncooled Direct Modulation Semiconductor Laser Assembly
  • YD/T 2001.2-2011 Semiconductor optoelectronic devices for fibre optic system applications.part 2:measuring methods

NEMA - National Electrical Manufacturers Association, Semiconductor light agent

National Fire Protection Association (NFPA), Semiconductor light agent

IEC - International Electrotechnical Commission, Semiconductor light agent

  • IEC TR 61292-9:2017 Optical amplifiers – Part 9: Semiconductor optical amplifiers (SOAs) (Edition 2.0)
  • IEC 60146-2:1974 Semiconductor Convertors Part 2: Semiconductor Self-Commutated Convertors (Edition 1.0)
  • IEC TR 63133:2017 Semiconductor devices - Scan based ageing level estimation for semiconductor devices (Edition 1.0)

YU-JUS, Semiconductor light agent

German Institute for Standardization, Semiconductor light agent

  • DIN IEC 60747-11:1992 Semiconductor devices; sectional specification for semiconductor devices; identical with IEC 60747-11:1985
  • DIN 50455-2:1999 Testing of materials for semiconductor technology - Methods for the characterisation photoresists - Part 2: Determination of photosensitivity of positive photoresists
  • DIN 50455-1:2009 Testing of materials for semiconductor technology - Methods for characterizing photoresists - Part 1: Determination of coating thickness with optical methods
  • DIN IEC/TR 61292-9:2013 Optical amplifiers - Part 9: Semiconductor optical amplifiers (SOAs) (IEC 86C/1109/CD:2013)
  • DIN EN 60747-15:2012-08 Semiconductor devices - Discrete devices - Part 15: Isolated power semiconductor devices (IEC 60747-15:2010); German version EN 60747-15:2012 / Note: DIN EN 60747-15 (2004-08) remains valid alongside this standard until 2014-01-20.
  • DIN 5032-9:2015-01 Photometry - Part 9: Measurement of the photometric quantities of incoherent emitting semiconductor light sources
  • DIN 5032-9:2015 Photometry - Part 9: Measurement of the photometric quantities of incoherent emitting semiconductor light sources
  • DIN EN 62417:2010-12 Semiconductor devices - Mobile ion tests for metal-oxide semiconductor field effect transistors (MOSFETs) (IEC 62417:2010); German version EN 62417:2010
  • DIN EN 62007-2:2009-09 Semiconductor optoelectronic devices for fibre optic system applications - Part 2: Measuring methods (IEC 62007-2:2009); German version EN 62007-2:2009 / Note: DIN EN 62007-2 (2001-06) remains valid alongside this standard until 2012-02-01.
  • DIN EN 61207-7:2015-07 Expression of performance of gas analyzers - Part 7: Tuneable semiconductor laser gas analyzers (IEC 61207-7:2013); German version EN 61207-7:2013 / Note: Applies in conjunction with DIN EN 61207-1 (2011-04).
  • DIN EN IEC 63287-1:2020-06 Semiconductor devices - Generic semiconductor qualification guidelines - Part 1: Guidelines for LSI reliability qualification (IEC 47/2614/CDV:2020); German and English version prEN IEC 63287-1:2020 / Note: Date of issue 2020-05-08*Intended as replacem...

JP-JEITA, Semiconductor light agent

  • JEITA ED7500A-2-2006 Standard for the dimensions of semiconductor devices (Discrete semiconductor devices)

American National Standards Institute (ANSI), Semiconductor light agent

European Committee for Electrotechnical Standardization(CENELEC), Semiconductor light agent

  • EN 62417:2010 Semiconductor devices - Mobile ion tests for metal-oxide semiconductor field effect transistors (MOSFETs)
  • EN IEC 60747-5-5:2020 Semiconductor devices - Part 5-5: Optoelectronic devices - Photocouplers
  • EN 62007-2:2009 Semiconductor optoelectronic devices for fibre optic system applications - Part 2: Measuring methods
  • EN 62779-1:2016 Semiconductor devices - Semiconductor interface for human body communication - Part 1: General requirements
  • EN 60747-15:2012 Semiconductor devices - Discrete devices - Part 15: Isolated power semiconductor devices
  • EN 62779-2:2016 Semiconductor devices - Semiconductor interface for human body communication - Part 2: Characterization of interfacing performances
  • EN 62779-3:2016 Semiconductor devices - Semiconductor interface for human body communication - Part 3: Functional type and its operational conditions
  • EN IEC 63287-1:2021 Semiconductor devices - Generic semiconductor qualification guidelines - Part 1: Guidelines for IC reliability qualification
  • EN 61207-7:2013 Expression of performance of gas analyzers - Part 7: Tuneable semiconductor laser gas analyzers

ES-UNE, Semiconductor light agent

  • UNE-EN IEC 60747-5-5:2020 Semiconductor devices - Part 5-5: Optoelectronic devices - Photocouplers (Endorsed by Asociación Española de Normalización in October of 2020.)
  • UNE-EN 60747-15:2012 Semiconductor devices - Discrete devices - Part 15: Isolated power semiconductor devices (Endorsed by AENOR in June of 2012.)
  • UNE-EN 62779-1:2016 Semiconductor devices - Semiconductor interface for human body communication - Part 1: General requirements (Endorsed by AENOR in July of 2016.)
  • UNE-EN 60747-5-5:2011/A1:2015 Semiconductor devices - Discrete devices - Part 5-5: Optoelectronic devices - Photocouplers (Endorsed by AENOR in May of 2015.)
  • UNE-EN 60747-5-5:2011 Semiconductor devices - Discrete devices -- Part 5-5: Optoelectronic devices - Photocouplers (Endorsed by AENOR in May of 2011.)
  • UNE-EN 62417:2010 Semiconductor devices - Mobile ion tests for metal-oxide semiconductor field effect transistors (MOSFETs) (Endorsed by AENOR in September of 2010.)
  • UNE-EN 62007-2:2009 Semiconductor optoelectronic devices for fibre optic system applications -- Part 2: Measuring methods (Endorsed by AENOR in June of 2009.)
  • UNE-EN 62779-2:2016 Semiconductor devices - Semiconductor interface for human body communication - Part 2: Characterization of interfacing performances (Endorsed by AENOR in July of 2016.)
  • UNE-EN 61207-7:2013 Expression of performance of gas analyzers - Part 7: Tuneable semiconductor laser gas analyzers (Endorsed by AENOR in January of 2014.)
  • UNE-EN 61207-7:2013/AC:2015 Expression of performance of gas analyzers - Part 7: Tuneable semiconductor laser gas analyzers (Endorsed by AENOR in September of 2015.)
  • UNE-EN IEC 63287-1:2021 Semiconductor devices - Generic semiconductor qualification guidelines - Part 1: Guidelines for IC reliability qualification (Endorsed by Asociación Española de Normalización in November of 2021.)

国家药监局, Semiconductor light agent

  • YY/T 1751-2020 Laser treatment equipment semiconductor laser intranasal irradiation therapy instrument

IEEE - The Institute of Electrical and Electronics Engineers@ Inc., Semiconductor light agent

SE-SIS, Semiconductor light agent

CENELEC - European Committee for Electrotechnical Standardization, Semiconductor light agent

  • EN 62007-2:2000 Semiconductor Optoelectronic Devices for Fibre Optic System Applications Part 2: Measuring Methods
  • EN 60747-15:2004 Discrete semiconductor devices Part 15: Isolated power semiconductor devices

American Society for Testing and Materials (ASTM), Semiconductor light agent

  • ASTM F1893-98(2003) Guide for Measurement of Ionizing Dose-Rate Burnout of Semiconductor Devices
  • ASTM F1893-98 Guide for Measurement of Ionizing Dose-Rate Burnout of Semiconductor Devices
  • ASTM F1893-18 Guide for Measurement of Ionizing Dose-Rate Survivability and Burnout of Semiconductor Devices
  • ASTM F1892-12(2018) Standard Guide for Ionizing Radiation (Total Dose) Effects Testing of Semiconductor Devices
  • ASTM F1892-06 Standard Guide for Ionizing Radiation (Total Dose) Effects Testing of Semiconductor Devices
  • ASTM F1892-04 Standard Guide for Ionizing Radiation (Total Dose) Effects Testing of Semiconductor Devices
  • ASTM F1892-98 Standard Guide for Ionizing Radiation (Total Dose) Effects Testing of Semiconductor Devices
  • ASTM F1893-11 Guide for Measurement of Ionizing Dose-Rate Survivability and Burnout of Semiconductor Devices
  • ASTM F1892-12 Standard Guide for Ionizing Radiation (Total Dose) Effects Testing of Semiconductor Devices

Professional Standard - Aerospace, Semiconductor light agent

  • QJ 10004-2008 Total dose radiation testing method of semiconductor devices for space applications
  • QJ 2225-1992 Semiconductor Device Usage Rules

Japanese Industrial Standards Committee (JISC), Semiconductor light agent

  • JIS R 1750:2012 Fine ceramics -- Light source for testing semiconducting photocatalytic materials used under indoor lighting environment

国家市场监督管理总局、中国国家标准化管理委员会, Semiconductor light agent

  • GB/T 37031-2018 Semiconductor lighting terminology
  • GB/T 36358-2018 Semiconductor optoelectronic devices—Blank detail specification for power light-emitting diodes
  • GB/T 39771.2-2021 Optical radiation safety of LEDs—Part 2: Measurement methods
  • GB/T 21548-2021 Methods of measurement of the high speed semiconductor lasers directly modulated for optical fiber communication systems

BE-NBN, Semiconductor light agent

US-Unspecified Preparing Activity, Semiconductor light agent

Guangdong Provincial Standard of the People's Republic of China, Semiconductor light agent

  • DB44/T 1873-2016 semiconductor refrigeration wine cabinet
  • DB44/T 1639.1-2015 General Rules for Semiconductor Lighting Standard Optical Components Part 1 Hierarchical Division

Danish Standards Foundation, Semiconductor light agent

  • DS/IEC 747-12:1993 Semiconductor devices. Part 12: Sectional specification for optoelectronic devices
  • DS/EN 60747-15:2012 Semiconductor devices - Discrete devices - Part 15: Isolated power semiconductor devices
  • DS/IEC 747-5:1986 Semiconductor devices. Discrete devices and integrated circuits. Part 5: Optoelectronic sevices
  • DS/EN 60747-5-5:2011 Semiconductor devices - Discrete devices - Part 5-5: Optoelectronic devices - Photocouplers
  • DS/EN 62417:2010 Semiconductor devices - Mobile ion tests for metal-oxide semiconductor field effect transistors (MOSFETs)
  • DS/EN 62007-2:2009 Semiconductor optoelectronic devices for fibre optic system applications - Part 2: Measuring methods
  • DS/EN IEC 63287-1:2021 Semiconductor devices – Generic semiconductor qualification guidelines – Part 1: Guidelines for IC reliability qualification

(U.S.) Telecommunications Industries Association , Semiconductor light agent

KR-KS, Semiconductor light agent

Hebei Provincial Standard of the People's Republic of China, Semiconductor light agent

  • DB13/T 5120-2019 Specifications for DC performance test of FP and DFB semiconductor laser chips for optical communication

IN-BIS, Semiconductor light agent

Underwriters Laboratories (UL), Semiconductor light agent

  • UL 1557-1993 Electrically isolated semiconductor devices
  • UL 1557-1997 Electrically isolated semiconductor devices
  • UL 1557-2006 UL Standard for Safety Electrically Isolated Semiconductor Devices Fourth Edition; Reprint with Revisions through and Including 6/26/2006
  • UL 1557-2011 Electrically isolated semiconductor devices

Professional Standard - Machinery, Semiconductor light agent

ESD - ESD ASSOCIATION, Semiconductor light agent

Guizhou Provincial Standard of the People's Republic of China, Semiconductor light agent

Association of German Mechanical Engineers, Semiconductor light agent

Standard Association of Australia (SAA), Semiconductor light agent

TH-TISI, Semiconductor light agent

(U.S.) Joint Electron Device Engineering Council Soild State Technology Association, Semiconductor light agent

  • JEDEC JESD14-1986 Semiconductor Power Control Modules
  • JEDEC JEP140-2002 Beaded Thermocouple Temperature Measurement of Semiconductor Packages
  • JEDEC JESD77C-2009 Terms, Definitions, and Letter Symbols for Discrete Semiconductor and Optoelectronic Devices
  • JEDEC JESD77D-2012 Terms, Definitions, and Letter Symbols for Discrete Semiconductor and Optoelectronic Devices

PL-PKN, Semiconductor light agent

  • PN T01503 ArkusZ50-1973 Semiconductor devicesDimensions Case C9
  • PN-EN IEC 60747-5-5-2021-04 E Semiconductor devices--Part 5-5: Optoelectronic devices--Photocouplers (IEC 60747-5-5:2020)
  • PN T01305-1992 Semiconductor devices. Integrated circuits. Sectional specificatiion for semiconductor integrated circuits excluding hybrid circuits

JP-JEC, Semiconductor light agent

Lithuanian Standards Office , Semiconductor light agent

  • LST EN IEC 60747-5-5:2020 Semiconductor devices - Part 5-5: Optoelectronic devices - Photocouplers (IEC 60747-5-5:2020)
  • LST EN 60747-15-2012 Semiconductor devices - Discrete devices -- Part 15: Isolated power semiconductor devices (IEC 60747-15:2010)

Indonesia Standards, Semiconductor light agent

未注明发布机构, Semiconductor light agent

ZA-SANS, Semiconductor light agent

  • SANS 60146-2:1999 Semiconductor converters Part 2: Self-commutated semiconductor converters including direct d.c. converters

IECQ - IEC: Quality Assessment System for Electronic Components, Semiconductor light agent

  • PQC 82-1989 Semiconductors for Use in Electronic Equipment: Sectional Specification: Semiconductor Integrated Circuits Excluding Hybrid Circuits

Professional Standard - Non-ferrous Metal, Semiconductor light agent

National Metrological Verification Regulations of the People's Republic of China, Semiconductor light agent

  • JJG 363-1984 Verification Regulation of Semiconductor Themistor Themometer




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