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Semiconductor Analysis Test

Semiconductor Analysis Test, Total:499 items.

In the international standard classification, Semiconductor Analysis Test involves: Radiation measurements, Analytical chemistry, Environmental testing, Semiconductor devices, Optoelectronics. Laser equipment, Electronic components in general, Software development and system documentation, Semiconducting materials, Inorganic chemicals, Testing of metals, Vocabularies, Linear and angular measurements, Electricity. Magnetism. Electrical and magnetic measurements, Insulating fluids, Fibre optic communications, Rectifiers. Convertors. Stabilized power supply, Integrated circuits. Microelectronics, Electromechanical components for electronic and telecommunications equipment, Insulating materials, Electrical wires and cables, Nuclear energy engineering, Components for electrical equipment, Power transmission and distribution networks, Electrical and electronic testing, Industrial automation systems, Mechanical structures for electronic equipment, Electrical engineering in general, Technical drawings, Radiation protection.


HU-MSZT, Semiconductor Analysis Test

Institute of Electrical and Electronics Engineers (IEEE), Semiconductor Analysis Test

British Standards Institution (BSI), Semiconductor Analysis Test

  • BS EN 61207-7:2014 Expression of performance of gas analyzers. Tuneable semiconductor laser gas analyzers
  • BS EN 61207-7:2013 Expression of performance of gas analyzers. Tuneable semiconductor laser gas analyzers
  • BS IEC 60747-18-1:2019 Semiconductor devices. Semiconductor bio sensors. Test method and data analysis for calibration of lens-free CMOS photonic array sensors
  • BS EN IEC 63364-1:2022 Semiconductor devices. Semiconductor devices for IoT system - Test method of sound variation detection
  • BS IEC 62951-5:2019 Semiconductor devices. Flexible and stretchable semiconductor devices - Test method for thermal characteristics of flexible materials
  • BS IEC 62951-7:2019 Semiconductor devices. Flexible and stretchable semiconductor devices - Test method for characterizing the barrier performance of thin film encapsulation for flexible organic semiconductor
  • 22/30443678 DC BS EN 60749-34-1. Semiconductor devices. Mechanical and climatic test methods - Part 34-1. Power cycling test for power semiconductor module
  • BS IEC 62951-6:2019 Semiconductor devices. Flexible and stretchable semiconductor devices - Test method for sheet resistance of flexible conducting films
  • BS IEC 62373-1:2020 Semiconductor devices. Bias-temperature stability test for metal-oxide, semiconductor, field-effect transistors (MOSFET) - Fast BTI test for MOSFET
  • BS IEC 62951-1:2017 Semiconductor devices. Flexible and stretchable semiconductor devices - Bending test method for conductive thin films on flexible substrates
  • BS EN 60749-7:2002 Semiconductor devices - Mechanical and climatic test methods - Internal moisture content measurement and the analysis of other residual gases
  • BS EN 60749-7:2011 Semiconductor devices. Mechanical and climatic test methods. Internal moisture content measurement and the analysis of other residual gases
  • BS IEC 63275-1:2022 Semiconductor devices. Reliability test method for silicon carbide discrete metal-oxide semiconductor field effect transistors - Test method for bias temperature instability
  • 17/30366375 DC BS IEC 62373-1. Semiconductor devices. Bias-temperature stability test for metal-oxide semiconductor field-effect transistors (MOSFET). Part 1. Fast BTI Test method
  • 18/30381548 DC BS EN 62373-1. Semiconductor devices. Bias-temperature stability test for metal-oxide semiconductor field-effect transistors (MOSFET). Part 1. Fast BTI Test method
  • 21/30432536 DC BS EN IEC 63364-1. Semiconductor devices. Semiconductor devices for IOT system. Part 1. Test method of sound variation detection
  • 22/30443234 DC BS EN 63378-3. Thermal standardization on semiconductor packages - Part 3. Thermal circuit simulation models of semiconductor packages for transient analysis
  • 14/30297227 DC BS EN 62880-1. Semiconductor devices. Wafer level reliability for semiconductor devices. Copper stress migration test method
  • 23/30469486 DC BS EN IEC 63378-2. Thermal standardization on semiconductor packages - Part 2. 3D thermal simulation models of discrete semiconductor packages for steady-state analysis
  • 23/30469010 DC BS EN IEC 63378-3. Thermal standardization on semiconductor packages - Part 3. Thermal circuit simulation models of discrete semiconductor packages for transient analysis
  • 20/30406230 DC BS IEC 63275-1. Semiconductor devices. Reliability test method for silicon carbide discrete metal-oxide semiconductor field effect transistors. Part 1. Test method for bias temperature instability
  • BS EN IEC 60749-39:2022 Tracked Changes. Semiconductor devices. Mechanical and climatic test methods. Measurement of moisture diffusivity and water solubility in organic materials used for semiconductor components
  • BS IEC 60747-14-11:2021 Semiconductor devices - Semiconductor sensors. Test method of surface acoustic wave-based integrated sensors for measuring ultraviolet, illumination and temperature
  • BS IEC 62951-9:2022 Semiconductor devices. Flexible and stretchable semiconductor devices - Performance testing methods of one transistor and one resistor (1T1R) resistive memory cells
  • BS IEC 62880-1:2017 Semiconductor devices. Stress migration test standard - Copper stress migration test standard
  • 20/30425840 DC BS EN IEC 60749-39. Semiconductor devices. Mechanical and climatic test methods. Part 39. Measurement of moisture diffusivity and water solubility in organic materials used for semiconductor components
  • 13/30284029 DC BS EN 60191-6-16. Mechanical standardization of semiconductor devices. Part 6-16. Glossary of semiconductor tests and burn-in sockets for BGA, LGA, FBGA and FLGA
  • BS EN 60749-34:2010 Semiconductor devices. Mechanical and climatic test methods. Power cycling
  • BS EN 60749-6:2017 Semiconductor devices. Mechanical and climatic test methods - Storage at high temperature
  • 18/30355426 DC BS EN 62830-5. Semiconductor devices. Semiconductor devices for energy harvesting and generation. Part 5. Test method for measuring generated power from flexible thermoelectric devices
  • 18/30362458 DC BS IEC 60747-14-11. Semiconductor devices. Part 14-11. Semiconductor sensors. Test method of surface acoustic wave based integrated sensor for measuring ultra violet, illumination and temperature
  • 19/30390371 DC BS IEC 60747-14-11. Semiconductor devices. Part 14-11. Semiconductor sensors. Test method of surface acoustic wave based integrated sensor for measuring ultra violet, illumination and temperature
  • PD ES 59008-4-1:2001 Data requirements for semiconductor die. Specific requirements and recommendations. Test and quality
  • BS EN 62047-3:2006 Semiconductor devices - Micro-electromechanical devices - Thin film standard test piece for tensile testing
  • 20/30406234 DC BS IEC 63275-2 Ed.1.0. Semiconductor devices. Reliability test method for silicon carbide discrete metal-oxide semiconductor field effect transistors. Part 2. Test method for bipolar degradation by body diode operating
  • IEC TR 63357:2022 Semiconductor devices. Standardization roadmap of fault test method for automotive vehicles
  • BS EN 60749-39:2006 Semiconductor devices - Mechanical and climatic test methods - Measurement of moisture diffusivity and water solubility in organic materials used for semiconductor components
  • BS IEC 62951-8:2023 Semiconductor devices. Flexible and stretchable semiconductor devices - Test method for stretchability, flexibility, and stability of flexible resistive memory
  • BS IEC 62830-5:2021 Semiconductor devices. Semiconductor devices for energy harvesting and generation. Test method for measuring generated power from flexible thermoelectric devices
  • BS IEC 62830-4:2019 Semiconductor devices. Semiconductor devices for energy harvesting and generation - Test and evaluation methods for flexible piezoelectric energy harvesting devices
  • BS EN 60749-9:2017 Semiconductor devices. Mechanical and climatic test methods - Permanence of marking
  • BS EN 60749-3:2017 Semiconductor devices. Mechanical and climatic test methods - External visual examination
  • 20/30423207 DC BS EN IEC 62951-9. Semiconductor devices. Flexible and stretchable semiconductor devices. Part 9. Performance testing methods of one transistor and one resistor (1T1R) resistive memory cells

(U.S.) Joint Electron Device Engineering Council Soild State Technology Association, Semiconductor Analysis Test

German Institute for Standardization, Semiconductor Analysis Test

  • DIN 50452-1:1995-11 Testing of materials for semiconductor technology - Test method for particle analysis in liquids - Part 1: Microscopic determination of particles
  • DIN EN 61207-7:2015-07 Expression of performance of gas analyzers - Part 7: Tuneable semiconductor laser gas analyzers (IEC 61207-7:2013); German version EN 61207-7:2013 / Note: Applies in conjunction with DIN EN 61207-1 (2011-04).
  • DIN 50452-3:1995-10 Testing of materials for semiconductor technology - Test method for particle analysis in liquids - Part 3: Calibration of optical particle counters
  • DIN 50452-2:2009-10 Testing of materials for semiconductor technology - Test method for particle analysis in liquids - Part 2: Determination of particles by optical particle counters
  • DIN EN 62415:2010-12 Semiconductor devices - Constant current electromigration test (IEC 62415:2010); German version EN 62415:2010
  • DIN EN 62417:2010-12 Semiconductor devices - Mobile ion tests for metal-oxide semiconductor field effect transistors (MOSFETs) (IEC 62417:2010); German version EN 62417:2010
  • DIN 50441-2:1998 Testing of materials for semiconductor technology - Determination of the geometric dimensions of semiconductor wafers - Part 2: Testing of edge profile
  • DIN 50441-1:1996 Testing of materials for semiconductor technology - Determination of the geometric dimensions of semiconductor wafers - Part 1: Thickness and thickness variation
  • DIN 50441-5:2001 Testing of materials for semiconductor technology - Determination of the geometric dimensions of semiconductor wafers - Part 5: Terms of shape and flatness deviation
  • DIN EN 60749-44:2017-04 Semiconductor devices - Mechanical and climatic test methods - Part 44: Neutron beam irradiated single event effect (SEE) test method for semiconductor devices (IEC 60749-44:2016); German version EN 60749-44:2016
  • DIN EN 62416:2010-12 Semiconductor devices - Hot carrier test on MOS transistors (IEC 62416:2010); German version EN 62416:2010
  • DIN 50448:1998 Testing of materials for semiconductor technology - Contactless determination of the electrical resistivity of semi-insulating semi-conductor slices using a capacitive probe
  • DIN EN 60749-7:2012 Semiconductor devices - Mechanical and climatic test methods - Part 7: Internal moisture content measurement and the analysis of other residual gases (IEC 60749-7:2011); German version EN 60749-7:2011
  • DIN EN 60749-29:2012-01 Semiconductor devices - Mechanical and climatic test methods - Part 29: Latch-up test (IEC 60749-29:2011); German version EN 60749-29:2011 / Note: DIN EN 60749-29 (2004-07) remains valid alongside this standard until 2014-05-12.
  • DIN EN 62418:2010-12 Semiconductor devices - Metallization stress void test (IEC 62418:2010); German version EN 62418:2010
  • DIN EN 60749-38:2008-10 Semiconductor devices - Mechanical and climatic test methods - Part 38: Soft error test method for semiconductor devices with memory (IEC 60749-38:2008); German version EN 60749-38:2008
  • DIN EN 60749-7:2012-02 Semiconductor devices - Mechanical and climatic test methods - Part 7: Internal moisture content measurement and the analysis of other residual gases (IEC 60749-7:2011); German version EN 60749-7:2011 / Note: DIN EN 60749-7 (2003-04) remains valid alon...
  • DIN 50452-1:1995 Testing of materials for semiconductor technology - Test method for particle analysis in liquids - Part 1: Microscopic determination of particles
  • DIN EN 60191-6-16:2007-11 Mechanical standardization of semiconductor devices - Part 6-16: Glossary of semiconductor tests and burn-in sockets for BGA, LGA, FBGA and FLGA (IEC 60191-6-16:2007); German version EN 60191-6-16:2007 / Note: To be replaced by DIN EN 60191-6-16 (2013-...
  • DIN 50452-2:2009 Testing of materials for semiconductor technology - Test method for particle analysis in liquids - Part 2: Determination of particles by optical particle counters
  • DIN 50449-2:1998 Testing of materials for semiconductor technology - Determination of impurity content in semiconductors by infrared absorption - Part 2: Boron in gallium arsenide
  • DIN EN 60749-39:2007-01 Semiconductor devices - Mechanical and climatic test methods - Part 39: Measurement of moisture diffusivity and water solubility in organic materials used for semiconductor components (IEC 60749-39:2006); German version EN 60749-39:2006 / Note: To be r...
  • DIN EN 60749-8:2003-12 Semiconductor devices - Mechanical and climatic test methods - Part 8: Sealing (IEC 60749-8:2002 + Corr. 1:2003 + Corr. 2:2003); German version EN 60749-8:2003 / Note: Under certain conditions, DIN EN 60749 (2002-09) remains valid alongside this standa...
  • DIN 51456:2013-10 Testing of materials for semiconductor technology - Surface analysis of silicon wafers by multielement determination in aqueous analysis solutions using mass spectrometry with inductively coupled plasma (ICP-MS)
  • DIN EN 60749-38:2008 Semiconductor devices - Mechanical and climatic test methods - Part 38: Soft error test method for semiconductor devices with memory (IEC 60749-38:2008); German version EN 60749-38:2008
  • DIN EN IEC 60749-13:2018-10 Semiconductor devices - Mechanical and climatic test methods - Part 13: Salt atmosphere (IEC 60749-13:2018); German version EN IEC 60749-13:2018 / Note: DIN EN 60749-13 (2003-04) remains valid alongside this standard until 2021-03-22.
  • DIN EN 60749-21:2012-01 Semiconductor devices - Mechanical and climatic test methods - Part 21: Solderability (IEC 60749-21:2011); German version EN 60749-21:2011 / Note: DIN EN 60749-21 (2005-06) remains valid alongside this standard until 2014-05-12.
  • DIN SPEC 1994:2017-02 Testing of materials for semiconductor technology - Determination of anions in weak acids
  • DIN EN 61207-7:2015 Expression of performance of gas analyzers - Part 7: Tuneable semiconductor laser gas analyzers (IEC 61207-7:2013); German version EN 61207-7:2013
  • DIN 50452-2:1991 Testing of materials for semiconductor technology; test method for particle analysis in liquids; determination of particles with optical particle counters
  • DIN EN 60749-22:2003-12 Semiconductor devices - Mechanical and climatic test methods - Part 22: Bond strength (IEC 60749-22:200 + Corr. 1:2003); German version EN 60749-22:2003 / Note: Under certain conditions, DIN EN 60749 (2002-09) remains valid alongside this standard unti...
  • DIN EN IEC 60749-12:2018-07 Semiconductor devices - Mechanical and climatic test methods - Part 12: Vibration, variable frequency (IEC 60749-12:2017); German version EN IEC 60749-12:2018 / Note: DIN EN 60749-12 (2003-04) remains valid alongside this standard until 2021-01-17.
  • DIN EN 60749-25:2004-04 Semiconductor devices - Mechanical and climatic test methods - Part 25: Temperature cycling (IEC 60749-25:2003); German version EN 60749-25:2003 / Note: Under certain conditions, DIN EN 60749 (2002-09) remains valid alongside this standard until 2006-0...
  • DIN EN 60749-27:2013-04 Semiconductor devices - Mechanical and climatic test methods - Part 27: Electrostatic discharge (ESD) sensitivity testing - Machine model (MM) (IEC 60749-27:2006 + A1:2012); German version EN 60749-27:2006 + A1:2012 / Note: DIN EN 60749-27 (2007-01) re...
  • DIN EN 60749-6:2017-11 Semiconductor devices - Mechanical and climatic test methods - Part 6: Storage at high temperature (IEC 60749-6:2017); German version EN 60749-6:2017 / Note: DIN EN 60749-6 (2003-04) remains valid alongside this standard until 2020-04-07.
  • DIN EN 60749-34:2011-05 Semiconductor devices - Mechanical and climatic test methods - Part 34: Power cycling (IEC 60749-34:2010); German version EN 60749-34:2010 / Note: DIN EN 60749-34 (2004-10) remains valid alongside this standard until 2013-12-01.
  • DIN 50452-3:1995 Testing of materials for semiconductor technology - Test method for particle analysis in liquids - Part 3: Calibration of optical particle counters
  • DIN ISO 15632:2015 Microbeam analysis - Selected instrumental performance parameters for the specification and checking of energy-dispersive X-ray spectrometers for use in electron probe microanalysis (ISO 15632:2012)
  • DIN EN 60191-6-16:2007 Mechanical standardization of semiconductor devices - Part 6-16: Glossary of semiconductor tests and burn-in sockets for BGA, LGA, FBGA and FLGA (IEC 60191-6-16:2007); German version EN 60191-6-16:2007
  • DIN 50453-3:2001 Testing of materials for semiconductor technology - Determination of etch rates of etching mixtures - Part 3: Aluminium, gravimetric method
  • DIN EN IEC 60749-39:2021-07 Semiconductor devices - Mechanical and climatic test methods - Part 39: Measurement of moisture diffusivity and water solubility in organic materials used for semiconductor components (IEC 47/2652/CDV:2020); English version prEN IEC 60749-39:2020 / Not...
  • DIN EN 62374-1:2011-06 Semiconductor devices - Part 1: Time-dependent dielectric breakdown (TDDB) test for inter-metal layers (IEC 62374-1:2010); German version EN 62374-1:2010 + AC:2011
  • DIN EN 60749-36:2003-12 Semiconductor devices - Mechanical and climatic test methods - Part 36: Acceleration, steady state (IEC 60749-36:2003); German version EN 60749-36:2003 / Note: Under certain conditions, DIN EN 60749 (2002-09) remains valid alongside this standard until...
  • DIN EN 60749-39:2007 Semiconductor devices - Mechanical and climatic test methods - Part 39: Measurement of moisture diffusivity and water solubility in organic materials used for semiconductor components (IEC 60749-39:2006); German version EN 60749-39:2006
  • DIN 51456:2013 Testing of materials for semiconductor technology - Surface analysis of silicon wafers by multielement determination in aqueous analysis solutions using mass spectrometry with inductively coupled plasma (ICP-MS)
  • DIN 50443-1:1988 Testing of materials for use in semiconductor technology; detection of crystal defects and inhomogeneities in silicon single crystals by X-ray topography
  • DIN EN 60749-23:2011-07 Semiconductor devices - Mechanical and climatic test methods - Part 23: High temperature operating life (IEC 60749-23:2004 + A1:2011); German version EN 60749-23:2004 + A1:2011 / Note: DIN EN 60749-23 (2004-10) remains valid alongside this standard unt...
  • DIN EN 60749-14:2004-07 Semiconductor devices - Mechanical and climatic test methods - Part 14: Robustness of terminations (lead integrity) (IEC 60749-14:2003); German version EN 60749-14:2003 / Note: Under certain conditions, DIN EN 60749 (2002-09) remains valid alongside th...
  • DIN EN 60749-19:2011-01 Semiconductor devices - Mechanical and climatic test methods - Part 19: Die shear strength (IEC 60749-19:2003 + A1:2010); German version EN 60749-19:2003 + A1:2010 / Note: DIN EN 60749-19 (2003-10) remains valid alongside this standard until 2013-09-01.
  • DIN EN 60749-9:2017-11 Semiconductor devices - Mechanical and climatic test methods - Part 9: Permanence of marking (IEC 60749-9:2017); German version EN 60749-9:2017 / Note: DIN EN 60749-9 (2003-04) remains valid alongside this standard until 2020-04-07.
  • DIN EN 62047-2:2007-02 Semiconductor devices - Micro-electromechanical devices - Part 2: Tensile testing method of thin film materials (IEC 62047-2:2006); German version EN 62047-2:2006
  • DIN EN 60749-3:2018-01 Semiconductor devices - Mechanical and climatic test methods - Part 3: External visual examination (IEC 60749-3:2017); German version EN 60749-3:2017 / Note: DIN EN 60749-3 (2003-04) remains valid alongside this standard until 2020-04-07.
  • DIN EN 62047-10:2012-03 Semiconductor devices - Micro-electromechanical devices - Part 10: Micro-pillar compression test for MEMS materials (IEC 62047-10:2011); German version EN 62047-10:2011
  • DIN 50442-1:1981 Testing of semi-conductive inorganic materials; determination of the surface structure of circular monocrystalline semi-conductive slices; as-cut and lapped slices

Association Francaise de Normalisation, Semiconductor Analysis Test

  • NF EN IEC 63364-1:2023 Dispositifs à semiconducteurs - Dispositifs à semiconducteurs pour système IDO - Partie 1 : méthode d'essai de détection de variation acoustique
  • NF C46-251-7*NF EN 61207-7:2014 Expression of performance of gas analyzers - Part 7 : tunable semiconductor laser gas analyzers
  • NF EN 61207-7:2014 Expression des performances des analyseurs de gaz - Partie 7 : analyseurs de gaz laser à semiconducteurs accordables
  • NF EN 62415:2010 Dispositifs à semiconducteurs - Essai d'électromigration en courant constant
  • NF EN 62417:2010 Dispositifs à semiconducteurs - Essais d'ions mobiles pour transistors à semiconducteur à oxyde métallique à effet de champ (MOSFET)
  • NF EN 60749-44:2016 Dispositifs à semiconducteurs - Méthodes d'essais mécaniques et climatiques - Partie 44 : méthode d'essai des effets d'un événement isolé (SEE) irradié par un faisceau de neutrons pour des dispositifs à semiconducteurs
  • NF EN 60749-38:2008 Dispositifs à semiconducteurs - Méthodes d'essais mécaniques et climatiques - Partie 38 : méthode d'essai des erreurs logicielles pour les dispositifs à semiconducteurs avec mémoire
  • NF EN 62416:2010 Dispositifs à semiconducteurs - Essai de porteur chaud sur les transistors MOS
  • NF C96-022-44*NF EN 60749-44:2016 Semiconductor devices - Mechanical and climatic test methods - Part 44 : neutron beam irradiated single event effect (SEE) test method for semiconductor devices
  • NF EN 60749-29:2012 Dispositifs à semiconducteurs - Méthodes d'essais mécaniques et climatiques - Partie 29 : essai de verrouillage
  • NF C96-022-7*NF EN 60749-7:2012 Semiconductor devices - Mechanical and climatic test methods - Part 7 : internal moisture content measurement and the analysis of other residual gases.
  • NF EN 60749-7:2012 Dispositifs à semiconducteurs - Méthodes d'essais mécaniques et climatiques - Partie 7 : mesure de la teneur en humidité interne et analyse des autres gaz résiduels
  • NF EN 62418:2011 Dispositifs à semi-conducteurs - Essai sur les cavités dues aux contraintes de la métallisation
  • NF C96-022-38*NF EN 60749-38:2008 Semiconductor devices - Mechanical and climatic test methods - Part 38 : soft error test method for semiconductor devices with memory.
  • NF X21-008:2012 Microbeam analysis - Selected instrumental performance parameters for the specification and checking of energy-dispersive ray spectrometers for use in electron probe microanalysis
  • NF EN 60749-8:2003 Dispositifs à semiconducteurs - Méthodes d'essais mécaniques et climatiques - Partie 8 : étanchéité
  • NF EN 60749-1:2003 Dispositifs à semiconducteurs - Méthodes d'essais mécaniques et climatiques - Partie 1 : généralités
  • NF X20-305:1975 Gas analysis by electrical conductimetry.
  • NF EN IEC 60749-39:2022 Dispositifs à semiconducteurs - Méthodes d'essais mécaniques et climatiques - Partie 39 : mesure de la diffusivité d'humidité et de l'hydrosolubilité dans les matériaux organiques utilisés dans les composants à semiconducteurs
  • NF EN 60749-21:2012 Dispositifs à semiconducteurs - Méthodes d'essais mécaniques et climatiques - Partie 21 : brasabilité
  • NF EN 60749-2:2002 Dispositifs à semiconducteurs - Méthodes d'essais mécaniques et climatiques - Partie 2 : basse pression atmosphérique
  • NF C96-022-39*NF EN IEC 60749-39:2022 Semiconductor devices - Mechanical and climatic test methods - Part 39 : measurement of moisture diffusivity and water solubility in organic materials used for semiconductor components
  • NF EN 60749-6:2017 Dispositifs à semiconducteurs - Méthodes d'essais mécaniques et climatiques - Partie 6 : stockage à haute température
  • NF EN 60749-25:2003 Dispositifs de semiconducteurs - Méthodes d'essais mécaniques et climatiques - Partie 25 : cycles de température
  • NF EN 60749-34:2011 Dispositifs à semiconducteurs - Méthodes d'essais mécaniques et climatiques - Partie 34 : cycles en puissance
  • NF EN IEC 60749-13:2018 Dispositifs à semiconducteurs - Méthodes d'essais mécaniques et climatiques - Partie 13 : atmosphère saline
  • NF EN IEC 60749-17:2019 Dispositifs à semiconducteurs - Méthodes d'essais mécaniques et climatiques - Partie 17 : irradiation aux neutrons
  • NF X20-355:1975 Gas analysis-determination of sulfur dioxide by electrical conductimetry.
  • NF C53-225:1985 Testing of semiconductor valves for high-voltage D.C. Power transmission.
  • NF EN 62047-3:2006 Dispositifs à semiconducteurs - Dispositifs microélectromécaniques - Partie 3 : éprouvettes d'essai normalisée en couche mince pour l'essai de traction
  • NF C96-022-26*NF EN IEC 60749-26:2018 Semiconductor devices - Mechanical and climatic test methods - Part 26 : electrostatic discharge (ESD) sensitivity testing - Human body model (HBM)
  • NF EN IEC 60749-26:2018 Dispositifs à semiconducteurs - Méthodes d'essais mécaniques et climatiques - Partie 26 : essai de sensibilité aux décharges électrostatiques (DES) - Modèle du corps humain (HBM)
  • NF C96-022-39*NF EN 60749-39:2006 Semiconductor devices - Mechanical and climatic test methods - Part 39 : measurement of moisture diffusivity and water solubility in organic materials used for semiconductor components
  • NF EN 60749-9:2017 Dispositifs à semiconducteurs - Méthodes d'essais mécaniques et climatiques - Partie 9 : permanence du marquage
  • NF EN 62047-2:2006 Dispositifs à semiconducteurs - Dispositifs microélectromécaniques - Partie 2 : méthodes d'essais de traction des matériaux en couche mince
  • NF EN IEC 60749-12:2018 Dispositifs à semiconducteurs - Méthodes d'essais mécaniques et climatiques - Partie 12 : vibrations, fréquences variables
  • NF EN 60749-19/A1:2011 Dispositifs à semiconducteurs - Méthodes d'essais mécaniques et climatiques - Partie 19 : résistance de la pastille au cisaillement
  • NF EN 60749-19:2003 Dispositifs à semiconducteurs - Méthodes d'essais mécaniques et climatiques - Partie 19 : résistance de la pastille au cisaillement
  • NF EN 60749-3:2017 Dispositifs à semiconducteurs - Méthodes d'essais mécaniques et climatiques - Partie 3 : examen visuel externe

General Administration of Quality Supervision, Inspection and Quarantine of the People‘s Republic of China, Semiconductor Analysis Test

  • GB/T 31359-2015 Test methods of semiconductor lasers
  • GB/T 5201-1994 Test procedures for semiconductor charged particle detectors
  • GB/T 1550-1997 Standard methods for measuring conductivity type of extrinsic semiconducting materials
  • GB/T 13974-1992 Test methods for semiconductor deviece curve tracers
  • GB/T 6616-2023 Non-contact eddy current method for testing semiconductor wafer resistivity and semiconductor film sheet resistance
  • GB/T 4298-1984 The activation analysis method for the determination of elemental impurities in semiconductor silicon materials
  • GB/T 42975-2023 Semiconductor integrated circuit driver test methods
  • GB/T 42838-2023 Semiconductor Integrated Circuit Hall Circuit Test Method
  • GB/T 43061-2023 Semiconductor integrated circuit PWM controller testing method
  • GB/T 42676-2023 X-ray Diffraction Method for Testing the Quality of Semiconductor Single Crystal
  • GB 35007-2018 Semiconductor integrated circuit low voltage differential signal circuit testing method
  • GB/T 36477-2018 Semiconductor integrated circuit.Measuring methods for flash memory
  • GB/T 4377-2018 Semiconductor integrated circuits.Measuring method of voltage regulators
  • GB/T 15653-1995 Measuring methods for gas sensors of metal-oxide semiconductor
  • GB/T 43040-2023 Semiconductor integrated circuit AC/DC converter testing method
  • GB/T 42970-2023 Semiconductor integrated circuit video encoding and decoding circuit testing methods
  • GB/T 14862-1993 Junction-to-case thermal resistance test methods of packages for semiconductor integrated circuits
  • GB/T 8446.2-2004 Heat sink for power semiconductor device Part 2:Measuring method of thermal resistance and input fluid-output fluid pressure difference
  • GB/T 15651.3-2003 Discrete semiconductor devices and integrated circuits Part 5-3:Optoelectronic devices Measuring methods
  • GB/T 8446.2-1987 Measuring method of thermal resistance and input fluid-output fluid pressure difference of heat sink for power semiconductor device
  • GB/T 14028-1992 General principles of measuring methods of analogue switches for semiconductor integrated circuits
  • GB/T 14030-1992 General principles of measuring methods of timer circuits for semiconductor integrated circuits
  • GB/T 42848-2023 Test method for direct digital frequency synthesizer of semiconductor integrated circuit
  • GB 14030-1992 Basic principles of semiconductor integrated circuit time-based circuit testing methods
  • GB 14028-2018 Basic principles of semiconductor integrated circuit analog switch test methods

CZ-CSN, Semiconductor Analysis Test

  • CSN 35 1540-1979 Tests of power semiconductor converters
  • CSN IEC 749:1994 Semiconductor devices.Mechanical and climatic test methods
  • CSN 35 6575 Z1-1997 Standard test procedureds for semiconductor X-ray energy spectrometers
  • CSN 35 8737-1975 Semiconductor devices. Diodes. Measurement of differential rosistanoe
  • CSN 35 1601-1980 Power semiconductor devices. General technical requirements. Testing methods
  • CSN IEC 596:1994 Definitions of test method terms for semiconductor radiation detectors and scintillation counting

RO-ASRO, Semiconductor Analysis Test

IN-BIS, Semiconductor Analysis Test

Defense Logistics Agency, Semiconductor Analysis Test

National Metrological Technical Specifications of the People's Republic of China, Semiconductor Analysis Test

  • JJF 2009-2022 Calibration Specification for Semiconductor Parameters Precision Analyzers
  • JJF 1895-2021 Calibration Specification for Semiconductor Devices DC and Low Frequency Parameters Test Equipments

Professional Standard - Electron, Semiconductor Analysis Test

  • SJ 20234-1993 Verification regulation of model HP4145A semiconductor parameter analyzer
  • SJ/Z 3206.13-1989 General rules for emision spectrum analysis for semiconductor materials
  • SJ/T 2215-2015 Measuring methods for semiconductor photocouplers
  • SJ 2749-1987 Method of measurement for semiconductor laser diodes
  • SJ 2214.1-1982 General procedures of measurement for semiconductor photodiodes and phototransistors
  • SJ/T 11394-2009 Measure methods of semiconductor light emitting diodes
  • SJ 20744-1999 General rule of infrared absorption spectral analysis for the impurity concentration in semiconductor materials
  • SJ 20788-2000 Measurment method for thermal impedance of semiconductor diodes
  • SJ 2355.1-1983 General procedures of measurement for light-emitting deivces
  • SJ 2215.1-1982 General procedures of measurement for semiconductor photocouplers
  • SJ 20787-2000 Measurment method for thermal resistance of semiconductor bridge rectifieres
  • SJ/T 11399-2009 Measurement methods for chips of light emitting diodes
  • SJ 20233-1993 Verification regulation of model IMPACT-II semiconductor discrete device test sysytem
  • SJ/T 11818.1-2022 Semiconductor UV-emitting diodes Part 1: Test methods
  • SJ 2355.5-1983 Method of measurement for luminous intensity and half-intensity angle of light-emitting devices
  • SJ 2065-1982 Testing method for diffusion furnace for semiconductor device manufacturing
  • SJ 2355.6-1983 Method of measurement for luminous flux of light-emitting devices
  • SJ 2355.4-1983 Methods of measurement for junction capacitance of light-emitting devices
  • SJ/T 2214-2015 Measuring methods for semiconductor photodiode and phototransistor
  • SJ 2355.3-1983 Method of measurement for reverse current of light-emitting devices
  • SJ 2355.2-1983 Method of measurement for forward voltage drop of light-emitting devices
  • SJ/T 10482-1994 Test method for characterizing semiconductor deep levels by transient capacitance techniques
  • SJ 20026-1992 Measuring methods for gas sensors of metal-oxide semiconductor
  • SJ 2214.3-1982 Method of measurement for dark current of semiconductor photodiodes
  • SJ 2214.5-1982 Method of measurement for junction capacitance of semiconductor photodiodes
  • SJ 2214.8-1982 Method of measurement for dark current voltage of semiconductor phototransistors
  • SJ 2658.1-1986 Methods of measurement for semiconductor infrared diodes General rules
  • SJ 2658.9-1986 Methods of measurement for semiconductor infrared diodes Methods of measurement for the intensity space distribution and half-intensity angle of radiation
  • SJ 2658.4-1986 Methods of measurement for semiconductor infrared diodes Methods of measurement for capacitance
  • SJ 2355.7-1983 Method of measurement for peak emission wavelength and spectral radiation bandwidth of light-emitting devices
  • SJ 2214.2-1982 Method of measurement for forward voltage of semiconductor photodiodes
  • SJ 2214.7-1982 Method of measurement for saturation voltage of semiconductor phototransistors
  • SJ 2214.10-1982 Method of measurement for light current of semiconductor photodiodes and phototransistors
  • SJ 2658.2-1986 Methods of measurement for semiconductor infrared diodes Methods of measurement for forward voltage drop
  • SJ 2658.3-1986 Methods of measurement for semiconductor infrared diodes Methods of measurement for backward voltage
  • SJ/T 11820-2022 Technical requirements and measurement methods for DC parameter test equipment of semiconductor discrete devices
  • SJ 2215.6-1982 Method of measurement for junction capacitance of semiconductor photocouplers (diodes)
  • SJ 2215.8-1982 Method of measurement for output saturation voltage of semiconductor photocouplers (diodes)
  • SJ 2658.7-1986 Methods of measurement for semiconductor infrared diodes Methods of measurement for radiant flux
  • SJ 2658.10-1986 Methods of measurement for semiconductor infrared diodes Methods of measurement for modulated wideband
  • SJ 2658.12-1986 Methods of measurement for semiconductor infrared diodes Methods of measurement for peak emission wavelength and spectral half width
  • SJ 2215.14-1982 Method of measurement for input-to-output isolation voltage of semiconductor photocouplers
  • SJ 2757-1987 Method of measurement by infra-red reflection for charge carrier concentraiton of heavily doped semiconductors
  • SJ 2215.3-1982 Method of measurement for forward current of semiconductor photocouplers (diodes)
  • SJ 2214.4-1982 Method of measurement for reverse break-down voltage of semiconductor photodiodes
  • SJ 2215.4-1982 Method of measurement for reverse current of semiconductor photocouplers (diodes)
  • SJ 2215.10-1982 Method of measurement for direct current transfer ratio of semiconductor photocouplers
  • SJ 2215.12-1982 Method of measurement for input-to-output capacitance of semiconductor photocouplers
  • SJ/T 10735-1996 Semiconductor integrated circuits General principles of measuring methods for TTL circuits
  • SJ/T 10736-1996 Semiconductor integrated circuits - General principles of measuring methods for HTL circuits
  • SJ/T 10737-1996 Semiconductor integrated circuits - General principles of measuring methods for ECL circuits
  • SJ/T 10741-2000 Semiconductor integrated circuits General principles of measuring methods for CMOS circuits
  • SJ/T 10741-1996 Semiconductor integrated circuits--General principles of measuring methods for CMOS circuits
  • SJ 2215.2-1982 Method of measurement for forward voltage of semiconductor photocouplers (diodes)
  • SJ 2215.13-1982 Method of measurement for input-to-output isolation resistance of semiconductor photocouplers
  • SJ/T 11874-2022 Stress test procedures for semiconductor discrete devices used in electric vehicles
  • SJ 2658.6-1986 Methods of measurement for semiconductor infrared diodes Methods of measurement for output optical power
  • SJ 2658.8-1986 Methods of measurement for semiconductor infrared diodes Methods of measurement for normal radiance
  • SJ 2658.5-1986 Methods of measurement for semiconductor infrared diodes Methods of measurement for forward series resistance
  • SJ 2658.11-1986 Methods of measurement for semiconductor infrared diodes Methods of measurement for pulse response characteristics

National Metrological Verification Regulations of the People's Republic of China, Semiconductor Analysis Test

International Electrotechnical Commission (IEC), Semiconductor Analysis Test

  • IEC 61207-7:2013 Expression of performance of gas analyzers - Part 7: Tuneable semiconductor laser gas analyzers
  • IEC 62416:2010 Semiconductor devices - Hot carrier test on MOS transistors
  • IEC 60747-18-1:2019 Semiconductor devices - Part 18-1: Semiconductor bio sensors - Test method and data analysis for calibration of lens-free CMOS photonic array sensors
  • IEC 61207-7:2013/COR1:2015 Expression of performance of gas analyzers - Part 7: Tuneable semiconductor laser gas analyzers; Corrigendum 1
  • IEC 63364-1:2022 Semiconductor devices - Semiconductor devices for IoT system - Part 1: Test method of sound variation detection
  • IEC 60749-44:2016 Semiconductor devices - Mechanical and climatic test methods - Part 44: Neutron beam irradiated single event effect (SEE) test method for semiconductor devices
  • IEC 60749-7:2002 Semiconductor devices - Mechanical and climatic test methods - Part 7: Internal moisture content measurement and the analysis of other residual gases
  • IEC 60749-7:2011 Semiconductor devices - Mechanical and climatic test methods - Part 7: Internal moisture content measurement and the analysis of other residual gases
  • IEC 60749-7/COR1:2003 Semiconductor devices - Mechanical and climatic test methods - Part 7: Internal moisture content measurement and the analysis of other residual gases
  • IEC 62951-9:2022 Semiconductor devices - Flexible and stretchable semiconductor devices - Part 9: Performance testing methods of one transistor and one resistor (1T1R) resistive memory cells
  • IEC 62951-6:2019 Semiconductor devices - Flexible and stretchable semiconductor devices - Part 6: Test method for sheet resistance of flexible conducting films
  • IEC 60749-39:2021 RLV Semiconductor devices - Mechanical and climatic test methods - Part 39: Measurement of moisture diffusivity and water solubility in organic materials used for semiconductor components
  • IEC 60749-39:2021 Semiconductor devices - Mechanical and climatic test methods - Part 39: Measurement of moisture diffusivity and water solubility in organic materials used for semiconductor components
  • IEC 60749-38:2008 Semiconductor devices - Mechanical and climatic test methods - Part 38: Soft error test method for semiconductor devices with memory
  • IEC 60749-13:2018 Semiconductor devices - Mechanical and climatic test methods - Part 13: Salt atmosphere
  • IEC 62951-1:2017 Semiconductor devices - Flexible and stretchable semiconductor devices - Part 1: Bending test method for conductive thin films on flexible substrates
  • IEC 62880-1:2017 Semiconductor devices - Stress migration test standard - Part 1: Copper stress migration test standard
  • IEC 62951-5:2019 Semiconductor devices - Flexible and stretchable semiconductor devices - Part 5: Test method for thermal characteristics of flexible materials
  • IEC 60333:1993 Nuclear instrumentation; semiconductor charged-particle detectors; test procedures
  • IEC 62830-5:2021 Semiconductor devices - Semiconductor devices for energy harvesting and generation - Part 5: Test method for measuring generated power from flexible thermoelectric devices
  • IEC 62373-1:2020 Semiconductor devices - Bias-temperature stability test for metal-oxide, semiconductor, field-effect transistors (MOSFET) - Part 1: Fast BTI test for MOSFET
  • IEC 60749-34:2010 Semiconductor devices - Mechanical and climatic test methods - Part 34: Power cycling
  • IEC 60191-6-16:2007 Mechanical standardization of semiconductor devices - Part 6-16: Glossary of semiconductor tests and burn-in sockets for BGA, LGA, FBGA and FLGA
  • IEC 63275-1:2022 Semiconductor devices - Reliability test method for silicon carbide discrete metal-oxide semiconductor field effect transistors - Part 1: Test method for bias temperature instability
  • IEC 60747-14-11:2021 Semiconductor devices - Part 14-11: Semiconductor sensors - Test method of surface acoustic wave-based integrated sensors for measuring ultraviolet, illumination and temperature
  • IEC 60749-3:2017 Semiconductor devices - Mechanical and climatic test methods - Part 3: External visual examination
  • IEC 60749-39:2006 Semiconductor devices - Mechanical and climatic test methods - Part 39: Measurement of moisture diffusivity and water solubility in organic materials used for semiconductor components

ES-UNE, Semiconductor Analysis Test

  • UNE-EN 61207-7:2013 Expression of performance of gas analyzers - Part 7: Tuneable semiconductor laser gas analyzers (Endorsed by AENOR in January of 2014.)
  • UNE-EN 61207-7:2013/AC:2015 Expression of performance of gas analyzers - Part 7: Tuneable semiconductor laser gas analyzers (Endorsed by AENOR in September of 2015.)
  • UNE-EN 62415:2010 Semiconductor devices - Constant current electromigration test (Endorsed by AENOR in September of 2010.)
  • UNE-EN 62417:2010 Semiconductor devices - Mobile ion tests for metal-oxide semiconductor field effect transistors (MOSFETs) (Endorsed by AENOR in September of 2010.)
  • UNE-EN 60749-38:2008 Semiconductor devices- Mechanical and climatic test methods- Part 38: Soft error test method for semiconductor devices with memory (Endorsed by AENOR in September of 2008.)
  • UNE-EN IEC 63364-1:2023 Semiconductor devices - Semiconductor devices for IOT system - Part 1: Test method of sound variation detection (Endorsed by Asociación Española de Normalización in March of 2023.)
  • UNE-EN 60749-7:2011 Semiconductor devices - Mechanical and climatic test methods - Part 7: Internal moisture content measurement and the analysis of other residual gases (Endorsed by AENOR in December of 2011.)
  • UNE-EN 60749-44:2016 Semiconductor devices - Mechanical and climatic test methods - Part 44: Neutron beam irradiated single event effect (SEE) test method for semiconductor devices (Endorsed by AENOR in December of 2016.)
  • UNE-EN 300386 V1.5.1:2016 Semiconductor devices - Mechanical and climatic test methods - Part 44: Neutron beam irradiated single event effect (SEE) test method for semiconductor devices (Endorsed by AENOR in December of 2016.)
  • UNE-EN 62416:2010 Semiconductor devices - Hot carrier test on MOS transistors (Endorsed by AENOR in September of 2010.)
  • UNE-EN 60749-29:2011 Semiconductor devices - Mechanical and climatic test methods - Part 29: Latch-up test (Endorsed by AENOR in November of 2011.)
  • UNE-EN 62418:2010 Semiconductor devices - Metallization stress void test (Endorsed by AENOR in October of 2010.)
  • UNE-EN IEC 60749-39:2022 Semiconductor devices - Mechanical and climatic test methods - Part 39: Measurement of moisture diffusivity and water solubility in organic materials used for semiconductor components (Endorsed by Asociación Española de Normalización in March of 2022.)
  • UNE-EN 60749-21:2011 Semiconductor devices - Mechanical and climatic test methods - Part 21: Solderability (Endorsed by AENOR in November of 2011.)
  • UNE-EN IEC 60749-13:2018 Semiconductor devices - Mechanical and climatic test methods - Part 13: Salt atmosphere (Endorsed by Asociación Española de Normalización in May of 2018.)
  • UNE-EN 60749-39:2006 Semiconductor devices - Mechanical and climatic test methods -- Part 39: Measurement of moisture diffusivity and water solubility in organic materials used for semiconductor components (IEC 60749-39:2006). (Endorsed by AENOR in November of 2006.)
  • UNE-EN IEC 60749-12:2018 Semiconductor devices - Mechanical and climatic test methods - Part 12: Vibration, variable frequency (Endorsed by Asociación Española de Normalización in April of 2018.)
  • UNE-EN IEC 60749-17:2019 Semiconductor devices - Mechanical and climatic test methods - Part 17: Neutron irradiation (Endorsed by Asociación Española de Normalización in June of 2019.)
  • UNE-EN 60191-6-16:2007 Mechanical standardization of semiconductor devices -- Part 6-16: Glossary of semiconductor tests and burn-in sockets for BGA, LGA, FBGA and FLGA (IEC 60191-6-16:2007). (Endorsed by AENOR in October of 2007.)
  • UNE-EN 62047-3:2006 Semiconductor devices - Micro-electromechanical devices -- Part 3: Thin film standard test piece for tensile testing (IEC 62047-3:2006) (Endorsed by AENOR in January of 2007.)
  • UNE-EN 62374-1:2010 Semiconductor devices -- Part 1: Time-dependent dielectric breakdown (TDDB) test for inter-metal layers (Endorsed by AENOR in March of 2011.)
  • UNE-EN IEC 60749-26:2018 Semiconductor devices - Mechanical and climatic test methods - Part 26: Electrostatic discharge (ESD) sensitivity testing - Human body model (HBM) (Endorsed by Asociación Española de Normalización in May of 2018.)
  • UNE-EN 60749-3:2017 Semiconductor devices - Mechanical and climatic test methods - Part 3: External visual examination (Endorsed by Asociación Española de Normalización in July of 2017.)
  • UNE-EN 60749-9:2017 Semiconductor devices - Mechanical and climatic test methods - Part 9: Permanence of marking (Endorsed by Asociación Española de Normalización in July of 2017.)
  • UNE-EN 62047-10:2011 Semiconductor devices - Micro-electromechanical devices - Part 10: Micro-pillar compression test for MEMS materials (Endorsed by AENOR in December of 2011.)

未注明发布机构, Semiconductor Analysis Test

  • BS EN 61207-7:2013(2015) Expression of performance of gas analyzers Part 7 : Tuneable semiconductor laser gas analyzers
  • GJB 128A-1997 Semiconductor discrete device test methods
  • BS IEC 62526:2007(2010) Standard for Extensions to Standard Test Interface Language (STIL) for Semiconductor Design Environments

Military Standard of the People's Republic of China-General Armament Department, Semiconductor Analysis Test

  • GJB 3157-1998 Semiconductor discrete device failure analysis methods and procedures
  • GJB 128-1986 Aerial photographic specification for military topographic mapping
  • GJB 128B-2021 Semiconductor discrete device test methods
  • GJB 3233-1998 Semiconductor integrated circuit failure analysis procedures and methods
  • GJB 9147-2017 Semiconductor integrated circuit operational amplifier test methods

Group Standards of the People's Republic of China, Semiconductor Analysis Test

YU-JUS, Semiconductor Analysis Test

European Committee for Electrotechnical Standardization(CENELEC), Semiconductor Analysis Test

  • EN 61207-7:2013 Expression of performance of gas analyzers - Part 7: Tuneable semiconductor laser gas analyzers
  • EN 60749-44:2016 Semiconductor devices - Mechanical and climatic test methods - Part 44: Neutron beam irradiated single event effect (SEE) test method for semiconductor devices
  • EN 60749-29:2011 Semiconductor devices - Mechanical and climatic test methods - Part 29: Latch-up test
  • EN 62418:2010 Semiconductor devices - Metallization stress void test
  • EN 60749-7:2011 Semiconductor devices - Mechanical and climatic test methods - Part 7: Internal moisture content measurement and the analysis of other residual gases
  • EN 60749-38:2008 Semiconductor devices - Mechanical and climatic test methods - Part 38: Soft error test method for semiconductor devices with memory
  • EN IEC 60749-39:2022 Semiconductor devices - Mechanical and climatic test methods - Part 39: Measurement of moisture diffusivity and water solubility in organic materials used for semiconductor components
  • EN 60749-34:2010 Semiconductor devices - Mechanical and climatic test methods - Part 34: Power cycling
  • EN 60749-39:2006 Semiconductor devices - Mechanical and climatic test methods Part 39: Measurement of moisture diffusivity and water solubility in organic materials used for semiconductor components
  • EN 60191-6-16:2007 Mechanical standardization of semiconductor devices - Part 6-16: Glossary of semiconductor tests and burn-in sockets for BGA, LGA, FBGA and FLGA
  • EN 60749-26:2014 Semiconductor devices - Mechanical and climatic test methods - Part 26: Electrostatic discharge (ESD) sensitivity testing - Human body model (HBM)
  • EN IEC 60749-26:2018 Semiconductor devices - Mechanical and climatic test methods - Part 26: Electrostatic discharge (ESD) sensitivity testing - Human body model (HBM)

RU-GOST R, Semiconductor Analysis Test

  • GOST 26239.0-1984 Semiconductor silicon, raw materials for its production and quartz. General requirements for methods of analysis
  • GOST 24461-1980 Power semiconductor devices. Test and measurement methods
  • GOST 18986.14-1985 Semiconductor diodes. Methods for measuring differential and slope resistances
  • GOST 18986.22-1978 Reference diodes. Methods for measuring differential resistance

Danish Standards Foundation, Semiconductor Analysis Test

  • DS/EN 62415:2010 Semiconductor devices - Constant current electromigration test
  • DS/EN 62417:2010 Semiconductor devices - Mobile ion tests for metal-oxide semiconductor field effect transistors (MOSFETs)
  • DS/EN 62416:2010 Semiconductor devices - Hot carrier test on MOS transistors
  • DS/EN 60749-38:2008 Semiconductor devices - Mechanical and climatic test methods - Part 38: Soft error test method for semiconductor devices with memory
  • DS/EN 60749-29:2011 Semiconductor devices - Mechanical and climatic test methods - Part 29: Latch-up test
  • DS/EN 62418:2010 Semiconductor devices - Metallization stress void test
  • DS/EN 60749-7:2011 Semiconductor devices - Mechanical and climatic test methods - Part 7: Internal moisture content measurement and the analysis of other residual gases
  • DS/EN 60191-6-16:2007 Mechanical standardization of semiconductor devices - Part 6-16: Glossary of semiconductor tests and burn-in sockets for BGA, LGA, FBGA and FLGA
  • DS/EN 60749-2:2003 Semiconductor Devices - Mechanical and climatic test methods - Part 2: Low air pressure
  • DS/EN 60749-21:2011 Semiconductor devices - Mechanical and climatic test methods - Part 21: Solderability
  • DS/EN 60749-39:2006 Semiconductor devices - Mechanical and climatic test methods -- Part 39: Measurement of moisture diffusivity and water solubility in organic materials used for semiconductor components
  • DS/EN 60749-34:2011 Semiconductor devices - Mechanical and climatic test methods - Part 34: Power cycling
  • DS/EN 60749-25:2004 Semiconductor devices - Mechanical and climatic test methods - Part 25: Temperature cycling
  • DS/ES 59008-4-1:2001 Data requirements for semiconductor die - Part 4-1: Specific requirements and recommendations - Test and quality
  • DS/EN 60749-26:2006 Semiconductor devices - Mechanical and climatic test methods - Part 26: Electrostatic discharge (ESD) sensitivity testing - Human body model (HBM)
  • DS/EN 60749-19/A1:2010 Semiconductor devices - Mechanical and climatic test methods - Part 19: Die shear strength
  • DS/EN 60749-19:2003 Semiconductor devices - Mechanical and climatic test methods - Part 19: Die shear strength
  • DS/EN 60749-4/Corr.1:2004 Semiconductor devices - Mechanical and climatic test methods - Part 4: Damp heat, steady state, highly accelerated stress test (HAST)
  • DS/EN 60749-4:2003 Semiconductor devices - Mechanical and climatic test methods - Part 4: Damp heat, steady state, highly accelerated stress test (HAST)

CENELEC - European Committee for Electrotechnical Standardization, Semiconductor Analysis Test

  • EN 62415:2010 Semiconductor devices - Constant current electromigration test
  • EN 60749-29:2003 Semiconductor devices Mechanical and climatic test methods Part 29: Latch-up test
  • EN 60749-7:2002 Semiconductor Devices - Mechanical and Climatic Test Methods Part 7: Internal Moisture Content Measurement and the Analysis of Other Residual Gases
  • EN 60749-34:2004 Semiconductor devices Mechanical and climatic test methods Part 34: Power Cycling
  • EN 60749-26:2006 Semiconductor devices - Mechanical and climatic test methods Part 26: Electrostatic discharge (ESD) sensitivity testing - Human body model (HBM)

Korean Agency for Technology and Standards (KATS), Semiconductor Analysis Test

  • KS C 6045-1991(2001) TESTING METHODS FOR SEMICONDUCTOR RECTIFIER DIODES
  • KS M 1804-2008(2018) Test method of hydrofluoric acid for semi-conductor
  • KS C 6045-1986 TESTING METHODS FOR SEMICONDUCTOR RECTIFIER DIODES
  • KS C IEC 60749-7:2020 Semiconductor devices — Mechanical and climatic test methods —Part 7: Internal moisture content measurement and the analysis of other residual gases
  • KS C 6565-2002 Test methods of semiconductor acceleration sensors
  • KS C 6565-2002(2017) Test methods of semiconductor acceleration sensors
  • KS C IEC 60749-7:2004 Semiconductor devices-Mechanical and climatic test methods-Part 7:Internal moisture content measurement and the analysis of other residual gases
  • KS C 6520-2008 Components and materials of semiconductor process-Measurement of wear characteristics by plasma
  • KS C IEC 60759-2009(2019) Standard test procedures for semiconductor X-ray energy spectrometers
  • KS C IEC 60749-39-2006(2021) Semiconductor devices-Mechanical and climatic test methods-Part 39:Measurement of moisture diffusivity and water solubility in organic materials used for semiconductor components
  • KS C IEC 60749-39-2006(2016) Semiconductor devices-Mechanical and climatic test methods-Part 39:Measurement of moisture diffusivity and water solubility in organic materials used for semiconductor components
  • KS D ISO 15632:2012 Microbeam analysis-Instrumental specification for energy dispersive X-ray spectrometers with semiconductor detectors
  • KS C IEC 60749-21:2020 Semiconductor devices — Mechanical and climatic test methods — Part 21: Solderability
  • KS C IEC 60749-2:2020 Semiconductor devices — Mechanical and climatic test methods — Part 2: Low air pressure
  • KS C IEC 60749-13:2020 Semiconductor devices — Mechanical and climatic test methods — Part 13: Salt atmosphere
  • KS C IEC 62951-1:2022 Semiconductor devices — Flexible and stretchable semiconductor devices — Part 1: Bending test method for conductive thin films on flexible substrates
  • KS C IEC 60749-34:2006 Semiconductor devices-Mechanical and climatic test methods-Part 34:Power cycling
  • KS C IEC 60749-6:2020 Semiconductor devices — Mechanical and climatic test methods — Part 6: Storage at high temperature
  • KS C IEC 60749-22:2020 Semiconductor devices — Mechanical and climatic test methods — Part 22: Bond strength
  • KS C IEC 60749-34:2017 Semiconductor devices-Mechanical and climatic test methods-Part 34:Power cycling
  • KS C IEC 62526-2015(2020) Standard for Extensions to Standard Test Interface Language (STIL) for Semiconductor Design Environments
  • KS C IEC 60749-39:2006 Semiconductor devices-Mechanical and climatic test methods-Part 39:Measurement of moisture diffusivity and water solubility in organic materials used for semiconductor components
  • KS C IEC 60749-3:2019 Semiconductor devices — Mechanical and climatic test methods — Part 3: External visual examination
  • KS C IEC 60749-19:2020 Semiconductor devices — Mechanical and climatic test methods — Part 19: Die shear strength
  • KS C IEC 60747-5-3:2004 Semiconductor devices-Discrete devices-Part 5-3:optoelectronic devices-Measuring method

工业和信息化部, Semiconductor Analysis Test

  • SJ/T 2749-2016 Semiconductor Laser Diode Test Methods
  • SJ/T 10805-2018 Semiconductor integrated circuit voltage comparator test method
  • SJ/T 11702-2018 Semiconductor integrated circuit serial peripheral interface test method
  • SJ/T 11706-2018 Semiconductor integrated circuit field programmable gate array testing method
  • SJ/T 11577-2016 SJ/T 11394-2009 "Semiconductor Light Emitting Diode Test Methods" Application Guide

Professional Standard - Aerospace, Semiconductor Analysis Test

  • QJ 1906-1990 器件
  • QJ 259-1977 器件
  • QJ 1906A-1997 Destructive Physical Analysis (DPA) Methods and Procedures for Semiconductor Devices
  • QJ 257-1977 Semiconductor TTL Integrated Digital Circuit Testing Method
  • QJ 1528-1988 Semiconductor integrated circuit time base test method
  • QJ/Z 32-1977 Testing methods for semi-conductor integrated comparison amplifiers
  • QJ 260-1977 器件
  • QJ 1460-1988 Test method for broadband amplifier of semiconductor integrated circuit
  • QJ 2491-1993 Test methods for operational amplifiers in semiconductor integrated circuits
  • QJ 1526-1988 器件
  • QJ 2660-1994 Test method for pulse width modulator of semiconductor integrated circuit switching power supply

国家市场监督管理总局、中国国家标准化管理委员会, Semiconductor Analysis Test

  • GB/T 1550-2018 Test methods for conductivity type of extrinsic semiconducting materials
  • GB/T 39771.2-2021 Optical radiation safety of LEDs—Part 2: Measurement methods

KR-KS, Semiconductor Analysis Test

  • KS C IEC 60749-7-2020 Semiconductor devices — Mechanical and climatic test methods —Part 7: Internal moisture content measurement and the analysis of other residual gases
  • KS C IEC 60749-2-2020 Semiconductor devices — Mechanical and climatic test methods — Part 2: Low air pressure
  • KS C IEC 60749-21-2020 Semiconductor devices — Mechanical and climatic test methods — Part 21: Solderability
  • KS C IEC 60749-13-2020 Semiconductor devices — Mechanical and climatic test methods — Part 13: Salt atmosphere
  • KS C IEC 62951-1-2022 Semiconductor devices — Flexible and stretchable semiconductor devices — Part 1: Bending test method for conductive thin films on flexible substrates
  • KS C IEC 60749-22-2020 Semiconductor devices — Mechanical and climatic test methods — Part 22: Bond strength
  • KS C IEC 60749-6-2020 Semiconductor devices — Mechanical and climatic test methods — Part 6: Storage at high temperature
  • KS C IEC 60749-19-2020 Semiconductor devices — Mechanical and climatic test methods — Part 19: Die shear strength
  • KS C IEC 60749-3-2019 Semiconductor devices — Mechanical and climatic test methods — Part 3: External visual examination

TR-TSE, Semiconductor Analysis Test

  • TS 2643-1977 Test Procedures For Bemiconductor Detectors For Ionizing Radiation

American Society for Testing and Materials (ASTM), Semiconductor Analysis Test

  • ASTM F1894-98 Test Method for Quantifying Tungsten Silicide Semiconductor Process Films for Composition and Thickness
  • ASTM F1894-98(2003) Test Method for Quantifying Tungsten Silicide Semiconductor Process Films for Composition and Thickness
  • ASTM F1894-98(2011) Test Method for Quantifying Tungsten Silicide Semiconductor Process Films for Composition and Thickness
  • ASTM E1161-95 Standard Test Method for Radiologic Examination of Semiconductors and Electronic Components

Lithuanian Standards Office , Semiconductor Analysis Test

  • LST EN 62417-2010 Semiconductor devices - Mobile ion tests for metal-oxide semiconductor field effect transistors (MOSFETs) (IEC 62417:2010)
  • LST EN 60749-38-2008 Semiconductor devices - Mechanical and climatic test methods - Part 38: Soft error test method for semiconductor devices with memory (IEC 60749-38:2008)
  • LST EN 62415-2010 Semiconductor devices - Constant current electromigration test (IEC 62415:2010)
  • LST EN 62416-2010 Semiconductor devices - Hot carrier test on MOS transistors (IEC 62416:2010)
  • LST EN 60749-7-2011 Semiconductor devices - Mechanical and climatic test methods -- Part 7: Internal moisture content measurement and the analysis of other residual gases (IEC 60749-7:2011)
  • LST EN 60749-29-2011 Semiconductor devices - Mechanical and climatic test methods -- Part 29: Latch-up test (IEC 60749-29:2011)
  • LST EN 62418-2010 Semiconductor devices - Metallization stress void test (IEC 62418:2010)
  • LST EN 60749-39-2006 Semiconductor devices - Mechanical and climatic test methods - Part 39: Measurement of moisture diffusivity and water solubility in organic materials used for semiconductor components (IEC 60749-39:2006)
  • LST EN 60191-6-16-2007 Mechanical standardization of semiconductor devices - Part 6-16: Glossary of semiconductor tests and burn-in sockets for BGA, LGA, FBGA and FLGA (IEC 60191-6-16:2007)
  • LST EN 60749-1-2003 Semiconductor devices. Mechanical and climatic test methods. Part 1: General(IEC 60749-1:2002)

SE-SIS, Semiconductor Analysis Test

  • SIS SS-IEC 749:1991 Semiconductor devices - Mechanical and climatic test methods
  • SIS SS IEC 333:1986 Nuclear instrumentation - Testprocedures for semiconductor chargedparticle detectors
  • SIS SS IEC 596:1981 Nuclear instrumentation - Definitions of test method terms for semi-conductor radiation detectors and scintillation counting
  • SIS SS IEC 700:1984 Power electronics — Semiconductor valves for high-voltage d.c. power transmission — Testing

Professional Standard - Post and Telecommunication, Semiconductor Analysis Test

  • YD/T 701-1993 Test method for semiconductor laser diode assembly
  • YD/T 2001.2-2011 Semiconductor optoelectronic devices for fibre optic system applications.part 2:measuring methods

ECIA - Electronic Components Industry Association, Semiconductor Analysis Test

  • EIA CB-5:1969 Recommended Test Procedure for Semiconductor Thermal Dissipating Devices

American National Standards Institute (ANSI), Semiconductor Analysis Test

Electronic Components, Assemblies and Materials Association, Semiconductor Analysis Test

  • ECA CB 5-1969 Recommended Test Procedure for Semiconductor Thermal Dissipating Devices
  • ECA CB 5-1-1971 Recommended Test Procedure for Semiconductor Thermal Dissipating Devices Addendum to CB5

中华人民共和国国家质量监督检验检疫总局、中国国家标准化管理委员会, Semiconductor Analysis Test

  • GB/T 14028-2018 Semiconductor integrated circuits—Measuring method of analogue switch
  • GB/T 35007-2018 Semiconductor integrated circuits—Measuring method of low voltage differential signaling circuitry
  • GB/T 35006-2018 Semiconductor integrated circuits—Measuring method of level converter
  • GB/T 36005-2018 Measuring methods of optical radiation safety for semiconductor lighting equipments and systems

Guizhou Provincial Standard of the People's Republic of China, Semiconductor Analysis Test

  • DB52/T 1104-2016 Transient test method for junction-case thermal resistance of semiconductor devices

IEEE - The Institute of Electrical and Electronics Engineers@ Inc., Semiconductor Analysis Test

  • IEEE 425-1957 TEST CODE for TRANSISTORS SEMICONDUCTOR DEFINITIONS and LEITER SYMBOLS
  • IEEE 300-1988 Standard Test Procedures for Semiconductor Charged-Particle Detectors
  • IEEE 300-1982 STANDARD TEST PROCEDURES FOR SEMICONDUCTOR CHARGED-PARTICLE DETECTORS
  • IEEE C62.35-1987 Standard Test Specifications for Avalanche Junction Semiconductor Surge-Protective Devices

International Organization for Standardization (ISO), Semiconductor Analysis Test

  • ISO 15632:2021 Microbeam analysis - Selected instrumental performance parameters for the specification and checking of energy-dispersive X-ray spectrometers (EDS) for use with a scanning electron microscope (SEM) or an electron probe microanalyser (EPMA)
  • ISO 15632:2012 Microbeam analysis - Selected instrumental performance parameters for the specification and checking of energy-dispersive X-ray spectrometers for use in electron probe microanalysis
  • ISO 15632:2002 Microbeam analysis - Instrumental specification for energy dispersive X-ray spectrometers with semiconductor detectors

Professional Standard - Machinery, Semiconductor Analysis Test

  • JB/T 6307.1-1992 Test method for power semiconductor module Rectifier diode pair of arms
  • JB/T 6307.2-1992 Test method for power semiconductor module Single-phase bridge rectifier diodes
  • JB/T 6307.3-1992 Test method for power semiconductor module Triphase bridge rectifier diode
  • JB/T 4219-1999 Type designation of measuring equipments for power semiconductor devices
  • JB/T 6307.4-1992 Test method for power semiconductor module Arm and pair of arms of bipolar transistor

AENOR, Semiconductor Analysis Test

  • UNE-EN 60749-2:2003 Semiconductor devices - Mechanical and climatic test methods -- Part 2: Low air pressure.
  • UNE-EN 60749-12:2003 Semiconductor devices - Mechanical and climatic test methods -- Part 12: Vibration, variable frequency.
  • UNE-EN 60749-10:2003 Semiconductor devices - Mechanical and climatic test methods -- Part 10: Mechanical shock.
  • UNE-EN 60749-3:2003 Semiconductor devices - Mechanical and climatic test methods -- Part 3: External visual examination.
  • UNE-EN 60749-9:2003 Semiconductor devices - Mechanical and climatic test methods -- Part 9: Permanence of marking.
  • UNE-EN 60749-5:2003 Semiconductor devices. Mechanical and climatic test methods. Part 5: Steady-state temperature humidity bias life test
  • UNE-EN 60749-4:2003 Semiconductor devices - Mechanical and climatic test methods -- Part 4: Damp heat, steady state, highly accelerated stress test (HAST).

ZA-SANS, Semiconductor Analysis Test

  • SANS 6281-1:2007 Test methods for impregnated paper-insulated electric cables Part 1: Tests on insulating and semi-conducting paper
  • SANS 6284-2:2007 Test methods for cross-linked polyethylene (XLPE) insulated electric cables Part 2: Tests on extruded semi-conducting screens

Military Standard of the People's Republic of China-Commission of Science,Technology and Industry for National Defence, Semiconductor Analysis Test

  • GJB 5914-2006 Methodsof destructive physical analysis for military semiconductor devices of all kinds of quality class

(U.S.) Ford Automotive Standards, Semiconductor Analysis Test

  • FORD FLTM BB 114-02-2013 PROCEDURE FOR SEMI-GUIDED WRAP BEND FIXTURE FOR TESTING AND ANALYSIS OF THE BENDABILITY OF ALUMINUM SHEET
  • FORD FLTM BB 114-02-2014 PROCEDURE FOR SEMI-GUIDED WRAP BEND FIXTURE FOR TESTING AND ANALYSIS OF THE BENDABILITY OF ALUMINUM SHEET
  • FORD FLTM BB 114-1-2002 PROCEDURE FOR SEMI-GUIDED WRAP BEND FIXTURE FOR TESTING AND ANALYSIS OF THE BENDABILITY OF ALUMINUM SHEET
  • FORD FLTM BB 114-01-2002 PROCEDURE FOR SEMI-GUIDED WRAP BEND FIXTURE FOR TESTING AND ANALYSIS OF THE BENDABILITY OF ALUMINUM SHEET

PH-BPS, Semiconductor Analysis Test

  • PNS IEC 62373-1:2021 Semiconductor devices - Bias-temperature stability test for metal-ox ide, semiconductor, field-effect transistors (MOSFET) - Part 1: Fast BTI test for MOSFET
  • PNS IEC 60749-44:2021 Semiconductor devices - Mechanical and climatic test methods - Part 44: Neutron beam irradiated single event effect (SEE) test method for semiconductor devices

Taiwan Provincial Standard of the People's Republic of China, Semiconductor Analysis Test

  • CNS 6802-1980 Standard Test Procedured for Noise Margin Measurements for Semiconductor Logic Gating Microcircuits
  • CNS 8104-1981 Method for Measuring MOSFET Linear Threshold Voltage
  • CNS 8106-1981 Method for Measuring MOSFET Saturated Threshold Voltage
  • CNS 5751-1980 Method of Test for Apparent Density of Ceramics for Electron Device and Semiconductor Application

AT-OVE/ON, Semiconductor Analysis Test

  • OVE EN IEC 63275-2:2021 Semiconductor devices - Reliability test method for silicon carbide discrete metal-oxide semiconductor field effect transistors - Part 2: Test method for bipolar degradation due to body diode operation (IEC 47/2680/CDV) (english version)
  • OVE EN IEC 60749-39:2020 Semiconductor devices - Mechanical and climatic test methods - Part 39: Measurement of moisture diffusivity and water solubility in organic materials used for semiconductor components (IEC 47/2652/CDV) (english version)

Japanese Industrial Standards Committee (JISC), Semiconductor Analysis Test

  • JIS C 5630-3:2009 Semiconductor devices -- Micro-electromechanical devices-- Part 3: Thin film standard test piece for tensile testing
  • JIS C 7021:1977 Environmental testing methods and endurance testing methods for discrete semiconductor devices

Shaanxi Provincial Standard of the People's Republic of China, Semiconductor Analysis Test

  • DB61/T 1448-2021 Intermittent life test procedures for high-power semiconductor discrete devices

中华人民共和国国家卫生和计划生育委员会, Semiconductor Analysis Test

  • GB/T 11713-1989 Standard methods of analyzing low specific gamma radioactivity samples by semiconductor gamma spectrometers




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