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Principles of Semiconductor Testing

Principles of Semiconductor Testing, Total:500 items.

In the international standard classification, Principles of Semiconductor Testing involves: Integrated circuits. Microelectronics, Semiconductor devices, Optoelectronics. Laser equipment, Software development and system documentation, Inorganic chemicals, Radiation measurements, Testing of metals, Linear and angular measurements, Electricity. Magnetism. Electrical and magnetic measurements, Semiconducting materials, Fibre optic communications, Rectifiers. Convertors. Stabilized power supply, Vocabularies, Electronic components in general, Nuclear energy engineering, Components for electrical equipment, Power transmission and distribution networks, Electrical and electronic testing, Industrial automation systems, Mechanical structures for electronic equipment, Insulating materials, Electrical wires and cables, Vacuum technology, Languages used in information technology, Plastics, Protection against fire, Rubber and plastics products, Applications of information technology, Electromechanical components for electronic and telecommunications equipment, Space systems and operations, Electrical engineering in general, Optics and optical measurements, Acoustics and acoustic measurements, Ceramics, Analytical chemistry, Farming and forestry, Particle size analysis. Sieving.


SE-SIS, Principles of Semiconductor Testing

Professional Standard - Electron, Principles of Semiconductor Testing

  • SJ/T 10735-1996 Semiconductor integrated circuits General principles of measuring methods for TTL circuits
  • SJ/T 10736-1996 Semiconductor integrated circuits - General principles of measuring methods for HTL circuits
  • SJ/T 10737-1996 Semiconductor integrated circuits - General principles of measuring methods for ECL circuits
  • SJ/T 10741-2000 Semiconductor integrated circuits General principles of measuring methods for CMOS circuits
  • SJ/T 10741-1996 Semiconductor integrated circuits--General principles of measuring methods for CMOS circuits
  • SJ/T 10804-2000 Semiconductor integrated circuits.General principles of measuring methods for level translator
  • SJ/T 10805-2000 Semiconductor integrated circuits.General principles of measuring methods for voltage comparators
  • SJ/T 10882-1996 Semiconductor integrated circuits - General principles of measuring methods for linear amplifiers
  • SJ/T 10803-1996 Semiconductor integrated circuits used as interface circuits - General principles of measuring methods for line circuits
  • SJ/T 10880-1996 Semiconductor integrated audio circuits - General principles of measuring methods for stereo decoders
  • SJ/T 10739-1996 Semiconductor integrated circuits - General principles of measuring methods for MOS random access memories
  • SJ/T 10738-1996 Semiconductor integrated circuits - General principles of measuring methods for operational (voltage) amplifiers
  • SJ/T 10800-1996 Semiconductor integrated circuits used as interface circuits - General principles of measuring methods for sense amplifiers
  • SJ/T 10802-1996 Semiconductor integrated circuits used as interface circuits - General principles of measuring methods for peripheral drivers
  • SJ/T 10805-1996 Semiconductor integrated circuits used as interface circuits--General principles of measuring methods of voltage comparators
  • SJ/T 10804-1996 Semiconductor integrated circuits used as interface circuits--General principles of measuring methods for level translator
  • SJ/T 10806-1996 Semiconductor integrated circuits used as interface circuits - General principles of measuring methods for display drivers
  • SJ/T 11005-1996 Semiconductor TV integrated circuits - General principles of measuring methods for audio channel circuits
  • SJ/T 11006-1996 Semiconductor TV integrated circuits - General principles of measuring methods for horizontal and vertical sweep circuits
  • SJ/T 10401-1993 General principles of measuring methods for motor speed stablizers of semiconductor audio integrated circuits
  • SJ/T 10740-1996 Semiconductor integrated circuits - General principles of measuring methods for bipolar random access memories
  • SJ/T 10402-1993 General principles of measuring methods for automatic music selectors of semiconductor audio integrated circuits
  • SJ/T 10400-1993 General principles of measuring methods for graphic equalizers of semiconductor audio integrated circuits
  • SJ/T 11004-1996 Semiconductor TV integrated circuits - General principles of measuring methods for picture channel circuits
  • SJ/T 10879-1996 Semiconductor integrated audio circuits - General principles of measuring methods for audio preamplifiers
  • SJ/T 10427.1-1993 Grneral Principles of measuring methods of FM converter for semiconductor audio integrated circuits
  • SJ/T 10427.2-1993 General principles of measuring methods of intermediate-frequency amplifier for semiconductor audio integrated circuits
  • SJ/T 10881-1996 Semiconductor integrated audio circuits - General principles of measuring methods for stereo decoders
  • SJ/T 10801-1996 Semiconductor integrated circuits used as interface circuits - General principles of measuring methods for magnetic memory drivers
  • SJ/T 11007-1996 Semiconductor TV integrated circuits - General principles of measuring methods for video signal and chrominance signal processing circuits
  • SJ/T 2215-2015 Measuring methods for semiconductor photocouplers
  • SJ 2749-1987 Method of measurement for semiconductor laser diodes
  • SJ 2214.1-1982 General procedures of measurement for semiconductor photodiodes and phototransistors
  • SJ/T 11394-2009 Measure methods of semiconductor light emitting diodes
  • SJ 20788-2000 Measurment method for thermal impedance of semiconductor diodes
  • SJ 2355.1-1983 General procedures of measurement for light-emitting deivces
  • SJ 2215.1-1982 General procedures of measurement for semiconductor photocouplers
  • SJ 20787-2000 Measurment method for thermal resistance of semiconductor bridge rectifieres
  • SJ/T 11399-2009 Measurement methods for chips of light emitting diodes
  • SJ/T 10818-1996 Semiconductor integrated circuits - General principles of measuring methods for D/A and A/D converters of non-linear circuits
  • SJ 2355.5-1983 Method of measurement for luminous intensity and half-intensity angle of light-emitting devices
  • SJ 2065-1982 Testing method for diffusion furnace for semiconductor device manufacturing
  • SJ 2355.6-1983 Method of measurement for luminous flux of light-emitting devices
  • SJ 2355.4-1983 Methods of measurement for junction capacitance of light-emitting devices
  • SJ/T 2214-2015 Measuring methods for semiconductor photodiode and phototransistor
  • SJ 2355.3-1983 Method of measurement for reverse current of light-emitting devices
  • SJ 2355.2-1983 Method of measurement for forward voltage drop of light-emitting devices
  • SJ/T 10482-1994 Test method for characterizing semiconductor deep levels by transient capacitance techniques
  • SJ 20026-1992 Measuring methods for gas sensors of metal-oxide semiconductor
  • SJ 2214.3-1982 Method of measurement for dark current of semiconductor photodiodes
  • SJ 2214.5-1982 Method of measurement for junction capacitance of semiconductor photodiodes
  • SJ 2214.8-1982 Method of measurement for dark current voltage of semiconductor phototransistors
  • SJ 2658.1-1986 Methods of measurement for semiconductor infrared diodes General rules
  • SJ 2658.4-1986 Methods of measurement for semiconductor infrared diodes Methods of measurement for capacitance
  • SJ 2355.7-1983 Method of measurement for peak emission wavelength and spectral radiation bandwidth of light-emitting devices
  • SJ 2214.2-1982 Method of measurement for forward voltage of semiconductor photodiodes
  • SJ 2214.7-1982 Method of measurement for saturation voltage of semiconductor phototransistors
  • SJ 2214.10-1982 Method of measurement for light current of semiconductor photodiodes and phototransistors
  • SJ 2658.2-1986 Methods of measurement for semiconductor infrared diodes Methods of measurement for forward voltage drop
  • SJ 2658.3-1986 Methods of measurement for semiconductor infrared diodes Methods of measurement for backward voltage
  • SJ 20233-1993 Verification regulation of model IMPACT-II semiconductor discrete device test sysytem
  • SJ 2215.6-1982 Method of measurement for junction capacitance of semiconductor photocouplers (diodes)
  • SJ 2215.8-1982 Method of measurement for output saturation voltage of semiconductor photocouplers (diodes)
  • SJ/T 11818.1-2022 Semiconductor UV-emitting diodes Part 1: Test methods
  • SJ 2658.7-1986 Methods of measurement for semiconductor infrared diodes Methods of measurement for radiant flux
  • SJ 2658.10-1986 Methods of measurement for semiconductor infrared diodes Methods of measurement for modulated wideband
  • SJ 2658.12-1986 Methods of measurement for semiconductor infrared diodes Methods of measurement for peak emission wavelength and spectral half width
  • SJ 2215.14-1982 Method of measurement for input-to-output isolation voltage of semiconductor photocouplers
  • SJ 2757-1987 Method of measurement by infra-red reflection for charge carrier concentraiton of heavily doped semiconductors
  • SJ 2215.3-1982 Method of measurement for forward current of semiconductor photocouplers (diodes)
  • SJ 2214.4-1982 Method of measurement for reverse break-down voltage of semiconductor photodiodes
  • SJ 2215.4-1982 Method of measurement for reverse current of semiconductor photocouplers (diodes)
  • SJ 2215.10-1982 Method of measurement for direct current transfer ratio of semiconductor photocouplers
  • SJ 2215.12-1982 Method of measurement for input-to-output capacitance of semiconductor photocouplers
  • SJ 2215.2-1982 Method of measurement for forward voltage of semiconductor photocouplers (diodes)
  • SJ 2215.13-1982 Method of measurement for input-to-output isolation resistance of semiconductor photocouplers
  • SJ 2658.6-1986 Methods of measurement for semiconductor infrared diodes Methods of measurement for output optical power
  • SJ 2658.8-1986 Methods of measurement for semiconductor infrared diodes Methods of measurement for normal radiance
  • SJ 2658.9-1986 Methods of measurement for semiconductor infrared diodes Methods of measurement for the intensity space distribution and half-intensity angle of radiation
  • SJ 2658.5-1986 Methods of measurement for semiconductor infrared diodes Methods of measurement for forward series resistance
  • SJ 2658.11-1986 Methods of measurement for semiconductor infrared diodes Methods of measurement for pulse response characteristics
  • SJ 2215.5-1982 Method of measurement for reverse breakdown voltage of semiconductor photocouplers (diodes)
  • SJ 2215.9-1982 Method of measurement for reverse cut-off current of semiconductor photocouplers transistors
  • SJ/T 11820-2022 Technical requirements and measurement methods for DC parameter test equipment of semiconductor discrete devices
  • SJ 2214.9-1982 Method of measurement for pulse rise and fall time of semiconductor photodiodes and phototransistors
  • SJ 2658.13-1986 Methods of measurement for semiconductor infrared diodes Methods of measurement for output optical power temperature coefficient
  • SJ 2215.7-1982 Method of measurement for collector-emitter reverse breakdown voltage of semiconductor photocouplers (diodes)
  • SJ 2215.11-1982 Method of measurement for pulse rise fall delay and storage time of semiconductor photocouplers

General Administration of Quality Supervision, Inspection and Quarantine of the People‘s Republic of China, Principles of Semiconductor Testing

  • GB/T 14028-1992 General principles of measuring methods of analogue switches for semiconductor integrated circuits
  • GB/T 14030-1992 General principles of measuring methods of timer circuits for semiconductor integrated circuits
  • GB 14030-1992 Basic principles of semiconductor integrated circuit time-based circuit testing methods
  • GB 14028-2018 Basic principles of semiconductor integrated circuit analog switch test methods
  • GB/T 6798-1996 Semiconductor integrated circuits. General principles of measuring methods of voltage comparators
  • GB/T 4377-1996 Semiconductor integrated circuits. General principles of measuring methods of voltage regulator
  • GB/T 14031-1992 General principles of measuring methods of analogue phase-loop for semiconductor integrated circuits
  • GB/T 14032-1992 General principles of measuring methods of digital phase-locked loop for semiconductor integrated circuits
  • GB/T 14029-1992 General principles of measuring methods of analogue multiplier for semiconductor integrated circuits
  • GB 14029-1992 Basic principles of semiconductor integrated circuit analog multiplier testing methods
  • GB 14031-1992 Basic principles of semiconductor integrated circuit analog phase-locked loop testing methods
  • GB 14032-1992 Basic principles of digital phase-locked loop testing methods for semiconductor integrated circuits
  • GB/T 15136-1994 General principles of measuring methods for quartz clock and watch circuits of semiconductor integrated circuits
  • GB/T 14115-1993 General principles of measuring methods of Sample/Hold amplifiers for semiconductor integrated circuits
  • GB 3442-1986 Basic principles of semiconductor integrated circuit operational (voltage) amplifier testing methods
  • GB/T 6800-1986 General principles of measuring methods of audio power amplifiers for semiconductor audio integrated circuits
  • GB/T 12843-1991 General principle of measuring methods of microprocessors and peripheral interface circuits' parameters for semiconductor integrated circuits
  • GB 12843-1991 Basic principles of electrical parameter testing methods for semiconductor integrated circuit microprocessors and peripheral interface circuits
  • GB/T 31359-2015 Test methods of semiconductor lasers
  • GB/T 14114-1993 General principles of measuring methods of V/F and F/V converters for semiconductor integrated circuits
  • GB/T 5201-1994 Test procedures for semiconductor charged particle detectors
  • GB/T 1550-1997 Standard methods for measuring conductivity type of extrinsic semiconducting materials
  • GB/T 13974-1992 Test methods for semiconductor deviece curve tracers
  • GB/T 6616-2023 Non-contact eddy current method for testing semiconductor wafer resistivity and semiconductor film sheet resistance
  • GB/T 42975-2023 Semiconductor integrated circuit driver test methods
  • GB/T 42838-2023 Semiconductor Integrated Circuit Hall Circuit Test Method
  • GB/T 43061-2023 Semiconductor integrated circuit PWM controller testing method
  • GB/T 42676-2023 X-ray Diffraction Method for Testing the Quality of Semiconductor Single Crystal
  • GB/T 36477-2018 Semiconductor integrated circuit.Measuring methods for flash memory
  • GB/T 4377-2018 Semiconductor integrated circuits.Measuring method of voltage regulators
  • GB/T 15653-1995 Measuring methods for gas sensors of metal-oxide semiconductor
  • GB/T 43040-2023 Semiconductor integrated circuit AC/DC converter testing method
  • GB/T 42970-2023 Semiconductor integrated circuit video encoding and decoding circuit testing methods
  • GB/T 14862-1993 Junction-to-case thermal resistance test methods of packages for semiconductor integrated circuits
  • GB/T 8446.2-1987 Measuring method of thermal resistance and input fluid-output fluid pressure difference of heat sink for power semiconductor device
  • GB/T 42848-2023 Test method for direct digital frequency synthesizer of semiconductor integrated circuit
  • GB 35007-2018 Semiconductor integrated circuit low voltage differential signal circuit testing method
  • GB/T 43226-2023 Single-event soft error time domain testing method for semiconductor integrated circuits used in aerospace applications
  • GB/T 8446.2-2004 Heat sink for power semiconductor device Part 2:Measuring method of thermal resistance and input fluid-output fluid pressure difference

AT-ON, Principles of Semiconductor Testing

  • ONORM E 1005-1987 Graphical symbols for diagrams; symbols for semiconductors and electron tubes

HU-MSZT, Principles of Semiconductor Testing

(U.S.) Joint Electron Device Engineering Council Soild State Technology Association, Principles of Semiconductor Testing

  • JEDEC JEP140-2002 Beaded Thermocouple Temperature Measurement of Semiconductor Packages
  • JEDEC JESD22-B108A-2003 Coplanarity Test for Surface-Mount Semiconductor Devices
  • JEDEC JESD22-B108B-2010 Coplanarity Test for Surface-Mount Semiconductor Devices
  • JEDEC JESD57-1996 Test Procedures for the Measurement of Single-Event Effects in Semiconductor Devices from Heavy Ion Irradiation
  • JEDEC JESD390A-1981 Standard Test Procedure for Noise Margin Measurements for Semiconductor Logic Gating Microcircuits
  • JEDEC JESD51-14-2010 Transient Dual Interface Test Method for the Measurement of the Thermal Resistance Junction to Case of Semiconductor Devices with Heat Flow Trough a Single Path

CZ-CSN, Principles of Semiconductor Testing

RO-ASRO, Principles of Semiconductor Testing

IN-BIS, Principles of Semiconductor Testing

Defense Logistics Agency, Principles of Semiconductor Testing

Group Standards of the People's Republic of China, Principles of Semiconductor Testing

  • T/SHDSGY 113-2022 Radio frequency front end semiconductor test software
  • T/ZACA 041-2022 Mixed signal semiconductor device test equipment
  • T/CASAS 011.1-2021 Test qualification for power devices in automotive applications
  • T/CASAS 011.2-2021 Test qualification for power modules in automotive applications
  • T/GVS 005-2022 Testing specification for contrast method of absolute pressure capacitance diaphragm vacuum gauge in the semiconductor equipment

YU-JUS, Principles of Semiconductor Testing

  • JUS N.R1.500-1980 Semioonductor ?evices. Acceptance. Electrical tests
  • JUS N.C0.036-1980 Testing offlexible cords and cables. Measurements ofinsulation resistance, resistance of semi-conducting layers and surface resistance.

Institute of Electrical and Electronics Engineers (IEEE), Principles of Semiconductor Testing

RU-GOST R, Principles of Semiconductor Testing

British Standards Institution (BSI), Principles of Semiconductor Testing

  • BS EN IEC 63364-1:2022 Semiconductor devices. Semiconductor devices for IoT system - Test method of sound variation detection
  • BS IEC 62951-5:2019 Semiconductor devices. Flexible and stretchable semiconductor devices - Test method for thermal characteristics of flexible materials
  • BS IEC 62951-7:2019 Semiconductor devices. Flexible and stretchable semiconductor devices - Test method for characterizing the barrier performance of thin film encapsulation for flexible organic semiconductor
  • BS IEC 62951-6:2019 Semiconductor devices. Flexible and stretchable semiconductor devices - Test method for sheet resistance of flexible conducting films
  • BS IEC 62373-1:2020 Semiconductor devices. Bias-temperature stability test for metal-oxide, semiconductor, field-effect transistors (MOSFET) - Fast BTI test for MOSFET
  • BS IEC 62951-1:2017 Semiconductor devices. Flexible and stretchable semiconductor devices - Bending test method for conductive thin films on flexible substrates
  • 14/30297227 DC BS EN 62880-1. Semiconductor devices. Wafer level reliability for semiconductor devices. Copper stress migration test method
  • 22/30443678 DC BS EN 60749-34-1. Semiconductor devices. Mechanical and climatic test methods - Part 34-1. Power cycling test for power semiconductor module
  • BS IEC 63275-1:2022 Semiconductor devices. Reliability test method for silicon carbide discrete metal-oxide semiconductor field effect transistors - Test method for bias temperature instability
  • 17/30366375 DC BS IEC 62373-1. Semiconductor devices. Bias-temperature stability test for metal-oxide semiconductor field-effect transistors (MOSFET). Part 1. Fast BTI Test method
  • 18/30381548 DC BS EN 62373-1. Semiconductor devices. Bias-temperature stability test for metal-oxide semiconductor field-effect transistors (MOSFET). Part 1. Fast BTI Test method
  • BS IEC 60747-14-11:2021 Semiconductor devices - Semiconductor sensors. Test method of surface acoustic wave-based integrated sensors for measuring ultraviolet, illumination and temperature
  • BS IEC 62951-9:2022 Semiconductor devices. Flexible and stretchable semiconductor devices - Performance testing methods of one transistor and one resistor (1T1R) resistive memory cells
  • BS IEC 62880-1:2017 Semiconductor devices. Stress migration test standard - Copper stress migration test standard
  • 21/30432536 DC BS EN IEC 63364-1. Semiconductor devices. Semiconductor devices for IOT system. Part 1. Test method of sound variation detection
  • BS EN 60749-34:2010 Semiconductor devices. Mechanical and climatic test methods. Power cycling
  • BS EN 60749-6:2017 Semiconductor devices. Mechanical and climatic test methods - Storage at high temperature
  • PD ES 59008-4-1:2001 Data requirements for semiconductor die. Specific requirements and recommendations. Test and quality
  • BS IEC 60747-18-1:2019 Semiconductor devices. Semiconductor bio sensors. Test method and data analysis for calibration of lens-free CMOS photonic array sensors
  • BS EN 62047-3:2006 Semiconductor devices - Micro-electromechanical devices - Thin film standard test piece for tensile testing
  • IEC TR 63357:2022 Semiconductor devices. Standardization roadmap of fault test method for automotive vehicles
  • BS EN 60749-39:2006 Semiconductor devices - Mechanical and climatic test methods - Measurement of moisture diffusivity and water solubility in organic materials used for semiconductor components
  • BS IEC 62951-8:2023 Semiconductor devices. Flexible and stretchable semiconductor devices - Test method for stretchability, flexibility, and stability of flexible resistive memory
  • BS IEC 62830-5:2021 Semiconductor devices. Semiconductor devices for energy harvesting and generation. Test method for measuring generated power from flexible thermoelectric devices
  • BS IEC 62830-4:2019 Semiconductor devices. Semiconductor devices for energy harvesting and generation - Test and evaluation methods for flexible piezoelectric energy harvesting devices
  • BS EN IEC 60749-39:2022 Tracked Changes. Semiconductor devices. Mechanical and climatic test methods. Measurement of moisture diffusivity and water solubility in organic materials used for semiconductor components
  • BS EN 60749-9:2017 Semiconductor devices. Mechanical and climatic test methods - Permanence of marking
  • BS EN 60749-3:2017 Semiconductor devices. Mechanical and climatic test methods - External visual examination
  • BS IEC 63284:2022 Semiconductor devices. Reliability test method by inductive load switching for gallium nitride transistors
  • BS EN 60749-29:2011 Semiconductor devices. Mechanical and climatic test methods. Latch-up test
  • 20/30406230 DC BS IEC 63275-1. Semiconductor devices. Reliability test method for silicon carbide discrete metal-oxide semiconductor field effect transistors. Part 1. Test method for bias temperature instability
  • BS EN 60749-4:2017 Semiconductor devices. Mechanical and climatic test methods - Damp heat, steady state, highly accelerated stress test (HAST)
  • 13/30284029 DC BS EN 60191-6-16. Mechanical standardization of semiconductor devices. Part 6-16. Glossary of semiconductor tests and burn-in sockets for BGA, LGA, FBGA and FLGA
  • PD IEC TR 60747-5-12:2021 Semiconductor devices. Optoelectronic devices. Light emitting diodes. Test method of LED efficiencies
  • 18/30362458 DC BS IEC 60747-14-11. Semiconductor devices. Part 14-11. Semiconductor sensors. Test method of surface acoustic wave based integrated sensor for measuring ultra violet, illumination and temperature
  • 19/30390371 DC BS IEC 60747-14-11. Semiconductor devices. Part 14-11. Semiconductor sensors. Test method of surface acoustic wave based integrated sensor for measuring ultra violet, illumination and temperature
  • 18/30355426 DC BS EN 62830-5. Semiconductor devices. Semiconductor devices for energy harvesting and generation. Part 5. Test method for measuring generated power from flexible thermoelectric devices
  • BS EN IEC 60749-30:2020 Semiconductor devices. Mechanical and climatic test methods - Preconditioning of non-hermetic surface mount devices prior to reliability testing
  • BS EN 60749-26:2006 Semiconductor devices - Mechanical and climatic test methods - Electrostatic discharge (ESD) sensitivity testing - Human body model (HBM)
  • BS EN 60749-26:2014 Semiconductor devices. Mechanical and climatic test methods. Electrostatic discharge (ESD) sensitivity testing. Human body model (HBM)
  • BS IEC 62526:2007 Standard for extensions to standard test interface language (STIL) for semiconductor design environments
  • BS EN 62047-18:2013 Semiconductor devices. Micro-electromechanical devices. Bend testing methods of thin film materials
  • BS EN IEC 60749-17:2019 Tracked Changes. Semiconductor devices. Mechanical and climatic test methods. Neutron irradiation
  • BS IEC 62830-6:2019 Semiconductor devices. Semiconductor devices for energy harvesting and generation - Test and evaluation methods for vertical contact mode triboelectric energy harvesting devices
  • 20/30425840 DC BS EN IEC 60749-39. Semiconductor devices. Mechanical and climatic test methods. Part 39. Measurement of moisture diffusivity and water solubility in organic materials used for semiconductor components
  • BS EN IEC 60749-26:2018 Tracked Changes. Semiconductor devices. Mechanical and climatic test methods. Electrostatic discharge (ESD) sensitivity testing. Human body model (HBM)
  • 20/30406234 DC BS IEC 63275-2 Ed.1.0. Semiconductor devices. Reliability test method for silicon carbide discrete metal-oxide semiconductor field effect transistors. Part 2. Test method for bipolar degradation by body diode operating
  • BS EN 60749-16:2003 Semiconductor devices - Mechanical and climatic test methods - Particle impact noise detection (PIND)
  • BS IEC 62047-32:2019 Semiconductor devices. Micro-electromechanical devices - Test method for the nonlinear vibration of MEMS resonators
  • 20/30423207 DC BS EN IEC 62951-9. Semiconductor devices. Flexible and stretchable semiconductor devices. Part 9. Performance testing methods of one transistor and one resistor (1T1R) resistive memory cells
  • 20/30409285 DC BS IEC 63284. Semiconductor devices. Reliability test method of on-stress reliability by inductive load switching for gallium nitride transistors

Japanese Industrial Standards Committee (JISC), Principles of Semiconductor Testing

  • JIS K 0315:2022 Method for measuring reducing trace gases by semiconductor-type trace gas measuring equipment
  • JIS R 1750:2012 Fine ceramics -- Light source for testing semiconducting photocatalytic materials used under indoor lighting environment
  • JIS C 5630-3:2009 Semiconductor devices -- Micro-electromechanical devices-- Part 3: Thin film standard test piece for tensile testing
  • JIS Z 8823-1:2001 Determination of particle size distribution by centrifugal liquid sedimentation methods -- Part 1: General principles and guidelines

Danish Standards Foundation, Principles of Semiconductor Testing

  • DS/EN 62415:2010 Semiconductor devices - Constant current electromigration test
  • DS/EN 62417:2010 Semiconductor devices - Mobile ion tests for metal-oxide semiconductor field effect transistors (MOSFETs)
  • DS/EN 62416:2010 Semiconductor devices - Hot carrier test on MOS transistors
  • DS/EN 62418:2010 Semiconductor devices - Metallization stress void test
  • DS/EN 60749-38:2008 Semiconductor devices - Mechanical and climatic test methods - Part 38: Soft error test method for semiconductor devices with memory
  • DS/EN 60749-29:2011 Semiconductor devices - Mechanical and climatic test methods - Part 29: Latch-up test
  • DS/EN 60191-6-16:2007 Mechanical standardization of semiconductor devices - Part 6-16: Glossary of semiconductor tests and burn-in sockets for BGA, LGA, FBGA and FLGA
  • DS/EN 60749-2:2003 Semiconductor Devices - Mechanical and climatic test methods - Part 2: Low air pressure
  • DS/EN 60749-21:2011 Semiconductor devices - Mechanical and climatic test methods - Part 21: Solderability
  • DS/EN 62373:2006 Bias-temperature stability test for metal-oxide, semiconductor, field-effect transistors (MOSFET)
  • DS/EN 60749-30/A1:2011 Semiconductor devices - Mechanical and climatic test methods - Part 30: Preconditioning of non-hermetic surface mount devices prior to reliability testing
  • DS/EN 60749-30:2005 Semiconductor devices - Mechanical and climatic test methods - Part 30: Preconditioning of non-hermetic surface mount devices prior to reliability testing
  • DS/EN 60749-34:2011 Semiconductor devices - Mechanical and climatic test methods - Part 34: Power cycling
  • DS/EN 60749-25:2004 Semiconductor devices - Mechanical and climatic test methods - Part 25: Temperature cycling
  • DS/EN 60749-39:2006 Semiconductor devices - Mechanical and climatic test methods -- Part 39: Measurement of moisture diffusivity and water solubility in organic materials used for semiconductor components
  • DS/EN 60749-26:2006 Semiconductor devices - Mechanical and climatic test methods - Part 26: Electrostatic discharge (ESD) sensitivity testing - Human body model (HBM)
  • DS/ES 59008-4-1:2001 Data requirements for semiconductor die - Part 4-1: Specific requirements and recommendations - Test and quality
  • DS/EN 60749-19/A1:2010 Semiconductor devices - Mechanical and climatic test methods - Part 19: Die shear strength
  • DS/EN 60749-19:2003 Semiconductor devices - Mechanical and climatic test methods - Part 19: Die shear strength

CENELEC - European Committee for Electrotechnical Standardization, Principles of Semiconductor Testing

  • EN 62415:2010 Semiconductor devices - Constant current electromigration test
  • EN 60749-29:2003 Semiconductor devices Mechanical and climatic test methods Part 29: Latch-up test
  • EN 60749-34:2004 Semiconductor devices Mechanical and climatic test methods Part 34: Power Cycling
  • EN 60749-26:2006 Semiconductor devices - Mechanical and climatic test methods Part 26: Electrostatic discharge (ESD) sensitivity testing - Human body model (HBM)

Korean Agency for Technology and Standards (KATS), Principles of Semiconductor Testing

  • KS C 6045-1991(2001) TESTING METHODS FOR SEMICONDUCTOR RECTIFIER DIODES
  • KS M 1804-2008(2018) Test method of hydrofluoric acid for semi-conductor
  • KS C 6045-1986 TESTING METHODS FOR SEMICONDUCTOR RECTIFIER DIODES
  • KS C 6565-2002 Test methods of semiconductor acceleration sensors
  • KS C 6565-2002(2017) Test methods of semiconductor acceleration sensors
  • KS C 6520-2008 Components and materials of semiconductor process-Measurement of wear characteristics by plasma
  • KS C IEC 60759-2009(2019) Standard test procedures for semiconductor X-ray energy spectrometers
  • KS C IEC 62526-2015(2020) Standard for Extensions to Standard Test Interface Language (STIL) for Semiconductor Design Environments
  • KS C IEC 60749-39-2006(2021) Semiconductor devices-Mechanical and climatic test methods-Part 39:Measurement of moisture diffusivity and water solubility in organic materials used for semiconductor components
  • KS C IEC 60749-39-2006(2016) Semiconductor devices-Mechanical and climatic test methods-Part 39:Measurement of moisture diffusivity and water solubility in organic materials used for semiconductor components
  • KS C IEC 62526:2015 Standard for Extensions to Standard Test Interface Language (STIL) for Semiconductor Design Environments
  • KS C IEC 60749-21:2020 Semiconductor devices — Mechanical and climatic test methods — Part 21: Solderability
  • KS C IEC 60749-2:2020 Semiconductor devices — Mechanical and climatic test methods — Part 2: Low air pressure
  • KS C IEC 60749-13:2020 Semiconductor devices — Mechanical and climatic test methods — Part 13: Salt atmosphere
  • KS C IEC 60749-34:2006 Semiconductor devices-Mechanical and climatic test methods-Part 34:Power cycling
  • KS C IEC 60749-6:2020 Semiconductor devices — Mechanical and climatic test methods — Part 6: Storage at high temperature
  • KS C IEC 60749-22:2020 Semiconductor devices — Mechanical and climatic test methods — Part 22: Bond strength
  • KS C IEC 60749-34:2017 Semiconductor devices-Mechanical and climatic test methods-Part 34:Power cycling
  • KS C IEC 60749-39:2006 Semiconductor devices-Mechanical and climatic test methods-Part 39:Measurement of moisture diffusivity and water solubility in organic materials used for semiconductor components

Association Francaise de Normalisation, Principles of Semiconductor Testing

  • NF EN 62415:2010 Dispositifs à semiconducteurs - Essai d'électromigration en courant constant
  • NF EN 62417:2010 Dispositifs à semiconducteurs - Essais d'ions mobiles pour transistors à semiconducteur à oxyde métallique à effet de champ (MOSFET)
  • NF EN IEC 63364-1:2023 Dispositifs à semiconducteurs - Dispositifs à semiconducteurs pour système IDO - Partie 1 : méthode d'essai de détection de variation acoustique
  • NF EN 62416:2010 Dispositifs à semiconducteurs - Essai de porteur chaud sur les transistors MOS
  • NF EN 60749-44:2016 Dispositifs à semiconducteurs - Méthodes d'essais mécaniques et climatiques - Partie 44 : méthode d'essai des effets d'un événement isolé (SEE) irradié par un faisceau de neutrons pour des dispositifs à semiconducteurs
  • NF EN 60749-38:2008 Dispositifs à semiconducteurs - Méthodes d'essais mécaniques et climatiques - Partie 38 : méthode d'essai des erreurs logicielles pour les dispositifs à semiconducteurs avec mémoire
  • NF EN 62418:2011 Dispositifs à semi-conducteurs - Essai sur les cavités dues aux contraintes de la métallisation
  • NF C96-022-44*NF EN 60749-44:2016 Semiconductor devices - Mechanical and climatic test methods - Part 44 : neutron beam irradiated single event effect (SEE) test method for semiconductor devices
  • NF EN 60749-29:2012 Dispositifs à semiconducteurs - Méthodes d'essais mécaniques et climatiques - Partie 29 : essai de verrouillage
  • NF C53-225:1985 Testing of semiconductor valves for high-voltage D.C. Power transmission.
  • NF EN 60749-8:2003 Dispositifs à semiconducteurs - Méthodes d'essais mécaniques et climatiques - Partie 8 : étanchéité
  • NF EN 60749-1:2003 Dispositifs à semiconducteurs - Méthodes d'essais mécaniques et climatiques - Partie 1 : généralités
  • NF ISO 10677:2011 Céramiques techniques - Sources lumineuses UV destinée aux essais des matériaux photocatalytiques semi-conducteurs
  • NF EN 60749-21:2012 Dispositifs à semiconducteurs - Méthodes d'essais mécaniques et climatiques - Partie 21 : brasabilité
  • NF EN 60749-2:2002 Dispositifs à semiconducteurs - Méthodes d'essais mécaniques et climatiques - Partie 2 : basse pression atmosphérique
  • NF EN IEC 60749-39:2022 Dispositifs à semiconducteurs - Méthodes d'essais mécaniques et climatiques - Partie 39 : mesure de la diffusivité d'humidité et de l'hydrosolubilité dans les matériaux organiques utilisés dans les composants à semiconducteurs
  • NF EN 62373:2006 Essai de stabilité de température en polarisation pour transistors à effet de champ métal-oxyde-semiconducteur (MOSFET)
  • NF EN IEC 60749-30:2020 Dispositifs à semiconducteurs - Méthodes d'essais mécaniques et climatiques - Partie 30 : préconditionnement des composants pour montage en surface non hermétiques avant les essais de fiabilité
  • NF EN 60749-6:2017 Dispositifs à semiconducteurs - Méthodes d'essais mécaniques et climatiques - Partie 6 : stockage à haute température
  • NF EN 60749-25:2003 Dispositifs de semiconducteurs - Méthodes d'essais mécaniques et climatiques - Partie 25 : cycles de température
  • NF EN 60749-34:2011 Dispositifs à semiconducteurs - Méthodes d'essais mécaniques et climatiques - Partie 34 : cycles en puissance
  • NF EN IEC 60749-13:2018 Dispositifs à semiconducteurs - Méthodes d'essais mécaniques et climatiques - Partie 13 : atmosphère saline
  • NF EN IEC 60749-17:2019 Dispositifs à semiconducteurs - Méthodes d'essais mécaniques et climatiques - Partie 17 : irradiation aux neutrons
  • NF C96-022-39*NF EN 60749-39:2006 Semiconductor devices - Mechanical and climatic test methods - Part 39 : measurement of moisture diffusivity and water solubility in organic materials used for semiconductor components
  • NF C96-022-39*NF EN IEC 60749-39:2022 Semiconductor devices - Mechanical and climatic test methods - Part 39 : measurement of moisture diffusivity and water solubility in organic materials used for semiconductor components
  • NF EN 62047-3:2006 Dispositifs à semiconducteurs - Dispositifs microélectromécaniques - Partie 3 : éprouvettes d'essai normalisée en couche mince pour l'essai de traction
  • NF C96-022-26*NF EN IEC 60749-26:2018 Semiconductor devices - Mechanical and climatic test methods - Part 26 : electrostatic discharge (ESD) sensitivity testing - Human body model (HBM)
  • NF EN IEC 60749-26:2018 Dispositifs à semiconducteurs - Méthodes d'essais mécaniques et climatiques - Partie 26 : essai de sensibilité aux décharges électrostatiques (DES) - Modèle du corps humain (HBM)
  • XP CEN/TS 16599:2014 Photocatalyse - Détermination des conditions d'irradiation pour tester les propriétés photocatalytiques de matériaux semi-conducteurs
  • NF EN 62374:2008 Dispositifs à semiconductors - Essai de rupture diélectrique en fonction du temps (TDDB) pour films diélectriques de grille
  • NF EN 60749-32/A1:2011 Dispositifs à semiconducteurs - Méthodes d'essais mécaniques et climatiques - Partie 32 : inflammabilité des dispositifs à encapsulation plastique (cas d'une cause extérieure d'inflammation)
  • NF EN 60749-32:2003 Dispositifs à semiconducteurs - Méthodes d'essais mécaniques et climatiques - Partie 32 : inflammabilité des dispositifs à encapsulation plastique (cas d'une cause extérieure d'inflammation)
  • NF EN 60749-31:2003 Dispositifs à semiconducteurs - Méthodes d'essais mécaniques et climatiques - Partie 31 : inflammabilité des dispositifs à encapsulation plastique (cas d'une cause interne d'inflammation)

ES-UNE, Principles of Semiconductor Testing

  • UNE-EN 62415:2010 Semiconductor devices - Constant current electromigration test (Endorsed by AENOR in September of 2010.)
  • UNE-EN 62417:2010 Semiconductor devices - Mobile ion tests for metal-oxide semiconductor field effect transistors (MOSFETs) (Endorsed by AENOR in September of 2010.)
  • UNE-EN 62416:2010 Semiconductor devices - Hot carrier test on MOS transistors (Endorsed by AENOR in September of 2010.)
  • UNE-EN 62418:2010 Semiconductor devices - Metallization stress void test (Endorsed by AENOR in October of 2010.)
  • UNE-EN 60749-38:2008 Semiconductor devices- Mechanical and climatic test methods- Part 38: Soft error test method for semiconductor devices with memory (Endorsed by AENOR in September of 2008.)
  • UNE-EN IEC 63364-1:2023 Semiconductor devices - Semiconductor devices for IOT system - Part 1: Test method of sound variation detection (Endorsed by Asociación Española de Normalización in March of 2023.)
  • UNE-EN 60749-44:2016 Semiconductor devices - Mechanical and climatic test methods - Part 44: Neutron beam irradiated single event effect (SEE) test method for semiconductor devices (Endorsed by AENOR in December of 2016.)
  • UNE-EN 300386 V1.5.1:2016 Semiconductor devices - Mechanical and climatic test methods - Part 44: Neutron beam irradiated single event effect (SEE) test method for semiconductor devices (Endorsed by AENOR in December of 2016.)
  • UNE-EN 60749-29:2011 Semiconductor devices - Mechanical and climatic test methods - Part 29: Latch-up test (Endorsed by AENOR in November of 2011.)
  • UNE-EN IEC 60749-39:2022 Semiconductor devices - Mechanical and climatic test methods - Part 39: Measurement of moisture diffusivity and water solubility in organic materials used for semiconductor components (Endorsed by Asociación Española de Normalización in March of 2022.)
  • UNE-EN 60191-6-16:2007 Mechanical standardization of semiconductor devices -- Part 6-16: Glossary of semiconductor tests and burn-in sockets for BGA, LGA, FBGA and FLGA (IEC 60191-6-16:2007). (Endorsed by AENOR in October of 2007.)
  • UNE-EN 60749-21:2011 Semiconductor devices - Mechanical and climatic test methods - Part 21: Solderability (Endorsed by AENOR in November of 2011.)
  • UNE-EN IEC 60749-13:2018 Semiconductor devices - Mechanical and climatic test methods - Part 13: Salt atmosphere (Endorsed by Asociación Española de Normalización in May of 2018.)
  • UNE-EN 62373:2006 Bias-temperature stability test for metal-oxide, semiconductor, field-effect transistors (MOSFET) (IEC 62373:2006). (Endorsed by AENOR in November of 2006.)
  • UNE-EN IEC 60749-30:2020 Semiconductor devices - Mechanical and climatic test methods - Part 30: Preconditioning of non-hermetic surface mount devices prior to reliability testing (Endorsed by Asociación Española de Normalización in November of 2020.)
  • UNE-EN IEC 60749-12:2018 Semiconductor devices - Mechanical and climatic test methods - Part 12: Vibration, variable frequency (Endorsed by Asociación Española de Normalización in April of 2018.)
  • UNE-EN IEC 60749-17:2019 Semiconductor devices - Mechanical and climatic test methods - Part 17: Neutron irradiation (Endorsed by Asociación Española de Normalización in June of 2019.)
  • UNE-EN 60749-39:2006 Semiconductor devices - Mechanical and climatic test methods -- Part 39: Measurement of moisture diffusivity and water solubility in organic materials used for semiconductor components (IEC 60749-39:2006). (Endorsed by AENOR in November of 2006.)
  • UNE-EN 62047-3:2006 Semiconductor devices - Micro-electromechanical devices -- Part 3: Thin film standard test piece for tensile testing (IEC 62047-3:2006) (Endorsed by AENOR in January of 2007.)
  • UNE-EN IEC 60749-26:2018 Semiconductor devices - Mechanical and climatic test methods - Part 26: Electrostatic discharge (ESD) sensitivity testing - Human body model (HBM) (Endorsed by Asociación Española de Normalización in May of 2018.)
  • UNE-EN 62374-1:2010 Semiconductor devices -- Part 1: Time-dependent dielectric breakdown (TDDB) test for inter-metal layers (Endorsed by AENOR in March of 2011.)

German Institute for Standardization, Principles of Semiconductor Testing

  • DIN EN 62415:2010-12 Semiconductor devices - Constant current electromigration test (IEC 62415:2010); German version EN 62415:2010
  • DIN EN 62417:2010-12 Semiconductor devices - Mobile ion tests for metal-oxide semiconductor field effect transistors (MOSFETs) (IEC 62417:2010); German version EN 62417:2010
  • DIN EN 62416:2010-12 Semiconductor devices - Hot carrier test on MOS transistors (IEC 62416:2010); German version EN 62416:2010
  • DIN 50448:1998 Testing of materials for semiconductor technology - Contactless determination of the electrical resistivity of semi-insulating semi-conductor slices using a capacitive probe
  • DIN EN 62418:2010-12 Semiconductor devices - Metallization stress void test (IEC 62418:2010); German version EN 62418:2010
  • DIN 50441-2:1998 Testing of materials for semiconductor technology - Determination of the geometric dimensions of semiconductor wafers - Part 2: Testing of edge profile
  • DIN 50441-1:1996 Testing of materials for semiconductor technology - Determination of the geometric dimensions of semiconductor wafers - Part 1: Thickness and thickness variation
  • DIN 50441-5:2001 Testing of materials for semiconductor technology - Determination of the geometric dimensions of semiconductor wafers - Part 5: Terms of shape and flatness deviation
  • DIN EN 60749-44:2017-04 Semiconductor devices - Mechanical and climatic test methods - Part 44: Neutron beam irradiated single event effect (SEE) test method for semiconductor devices (IEC 60749-44:2016); German version EN 60749-44:2016
  • DIN EN 60749-38:2008-10 Semiconductor devices - Mechanical and climatic test methods - Part 38: Soft error test method for semiconductor devices with memory (IEC 60749-38:2008); German version EN 60749-38:2008
  • DIN SPEC 1994:2017-02 Testing of materials for semiconductor technology - Determination of anions in weak acids
  • DIN EN 60749-29:2012-01 Semiconductor devices - Mechanical and climatic test methods - Part 29: Latch-up test (IEC 60749-29:2011); German version EN 60749-29:2011 / Note: DIN EN 60749-29 (2004-07) remains valid alongside this standard until 2014-05-12.
  • DIN EN 60191-6-16:2007-11 Mechanical standardization of semiconductor devices - Part 6-16: Glossary of semiconductor tests and burn-in sockets for BGA, LGA, FBGA and FLGA (IEC 60191-6-16:2007); German version EN 60191-6-16:2007 / Note: To be replaced by DIN EN 60191-6-16 (2013-...
  • DIN 50449-2:1998 Testing of materials for semiconductor technology - Determination of impurity content in semiconductors by infrared absorption - Part 2: Boron in gallium arsenide
  • DIN EN 60749-39:2007-01 Semiconductor devices - Mechanical and climatic test methods - Part 39: Measurement of moisture diffusivity and water solubility in organic materials used for semiconductor components (IEC 60749-39:2006); German version EN 60749-39:2006 / Note: To be r...
  • DIN EN 60749-8:2003-12 Semiconductor devices - Mechanical and climatic test methods - Part 8: Sealing (IEC 60749-8:2002 + Corr. 1:2003 + Corr. 2:2003); German version EN 60749-8:2003 / Note: Under certain conditions, DIN EN 60749 (2002-09) remains valid alongside this standa...
  • DIN EN IEC 60749-13:2018-10 Semiconductor devices - Mechanical and climatic test methods - Part 13: Salt atmosphere (IEC 60749-13:2018); German version EN IEC 60749-13:2018 / Note: DIN EN 60749-13 (2003-04) remains valid alongside this standard until 2021-03-22.
  • DIN EN 60749-21:2012-01 Semiconductor devices - Mechanical and climatic test methods - Part 21: Solderability (IEC 60749-21:2011); German version EN 60749-21:2011 / Note: DIN EN 60749-21 (2005-06) remains valid alongside this standard until 2014-05-12.
  • DIN EN 62373:2007-01 Bias-temperature stability test for metal-oxide, semiconductor, field-effect transistors (MOSFET) (IEC 62373:2006); German version EN 62373:2006
  • DIN 50452-1:1995-11 Testing of materials for semiconductor technology - Test method for particle analysis in liquids - Part 1: Microscopic determination of particles
  • DIN EN IEC 60749-30:2023-02 Semiconductor devices - Mechanical and climatic test methods - Part 30: Preconditioning of non-hermetic surface mount devices prior to reliability testing (IEC 60749-30:2020); German version EN IEC 60749-30:2020 / Note: DIN EN 60749-30 (2011-12) remain...
  • DIN EN 60749-22:2003-12 Semiconductor devices - Mechanical and climatic test methods - Part 22: Bond strength (IEC 60749-22:200 + Corr. 1:2003); German version EN 60749-22:2003 / Note: Under certain conditions, DIN EN 60749 (2002-09) remains valid alongside this standard unti...
  • DIN EN IEC 60749-12:2018-07 Semiconductor devices - Mechanical and climatic test methods - Part 12: Vibration, variable frequency (IEC 60749-12:2017); German version EN IEC 60749-12:2018 / Note: DIN EN 60749-12 (2003-04) remains valid alongside this standard until 2021-01-17.
  • DIN EN 60749-25:2004-04 Semiconductor devices - Mechanical and climatic test methods - Part 25: Temperature cycling (IEC 60749-25:2003); German version EN 60749-25:2003 / Note: Under certain conditions, DIN EN 60749 (2002-09) remains valid alongside this standard until 2006-0...
  • DIN EN 60749-27:2013-04 Semiconductor devices - Mechanical and climatic test methods - Part 27: Electrostatic discharge (ESD) sensitivity testing - Machine model (MM) (IEC 60749-27:2006 + A1:2012); German version EN 60749-27:2006 + A1:2012 / Note: DIN EN 60749-27 (2007-01) re...
  • DIN EN 60749-6:2017-11 Semiconductor devices - Mechanical and climatic test methods - Part 6: Storage at high temperature (IEC 60749-6:2017); German version EN 60749-6:2017 / Note: DIN EN 60749-6 (2003-04) remains valid alongside this standard until 2020-04-07.
  • DIN EN 60749-34:2011-05 Semiconductor devices - Mechanical and climatic test methods - Part 34: Power cycling (IEC 60749-34:2010); German version EN 60749-34:2010 / Note: DIN EN 60749-34 (2004-10) remains valid alongside this standard until 2013-12-01.
  • DIN EN 60749-39:2007 Semiconductor devices - Mechanical and climatic test methods - Part 39: Measurement of moisture diffusivity and water solubility in organic materials used for semiconductor components (IEC 60749-39:2006); German version EN 60749-39:2006
  • DIN 50450-2:1991-03 Testing of materials for semiconductor technology; determination of impurities in carrier gases and doping gases; determination of oxygen impurity in N<(Index)2>, Ar, He, Ne and H<(Index)2> by using a galvanic cell
  • DIN 50453-3:2001 Testing of materials for semiconductor technology - Determination of etch rates of etching mixtures - Part 3: Aluminium, gravimetric method
  • DIN EN 62374:2008-02 Semiconductor devices - Time Dependent Dielectric Breakdown (TDDB) test for gate dielectric films (IEC 62374:2007); German version EN 62374:2007
  • DIN EN 62374-1:2011-06 Semiconductor devices - Part 1: Time-dependent dielectric breakdown (TDDB) test for inter-metal layers (IEC 62374-1:2010); German version EN 62374-1:2010 + AC:2011
  • DIN EN 60749-36:2003-12 Semiconductor devices - Mechanical and climatic test methods - Part 36: Acceleration, steady state (IEC 60749-36:2003); German version EN 60749-36:2003 / Note: Under certain conditions, DIN EN 60749 (2002-09) remains valid alongside this standard until...
  • DIN EN IEC 60749-39:2021-07 Semiconductor devices - Mechanical and climatic test methods - Part 39: Measurement of moisture diffusivity and water solubility in organic materials used for semiconductor components (IEC 47/2652/CDV:2020); English version prEN IEC 60749-39:2020 / Not...

工业和信息化部, Principles of Semiconductor Testing

  • SJ/T 2749-2016 Semiconductor Laser Diode Test Methods
  • SJ/T 10805-2018 Semiconductor integrated circuit voltage comparator test method
  • SJ/T 11702-2018 Semiconductor integrated circuit serial peripheral interface test method
  • SJ/T 11706-2018 Semiconductor integrated circuit field programmable gate array testing method
  • SJ/T 11577-2016 SJ/T 11394-2009 "Semiconductor Light Emitting Diode Test Methods" Application Guide

International Electrotechnical Commission (IEC), Principles of Semiconductor Testing

  • IEC 62416:2010 Semiconductor devices - Hot carrier test on MOS transistors
  • IEC 63364-1:2022 Semiconductor devices - Semiconductor devices for IoT system - Part 1: Test method of sound variation detection
  • IEC 60749-44:2016 Semiconductor devices - Mechanical and climatic test methods - Part 44: Neutron beam irradiated single event effect (SEE) test method for semiconductor devices
  • IEC 60333:1993 Nuclear instrumentation; semiconductor charged-particle detectors; test procedures
  • IEC 62951-9:2022 Semiconductor devices - Flexible and stretchable semiconductor devices - Part 9: Performance testing methods of one transistor and one resistor (1T1R) resistive memory cells
  • IEC 62830-5:2021 Semiconductor devices - Semiconductor devices for energy harvesting and generation - Part 5: Test method for measuring generated power from flexible thermoelectric devices
  • IEC 62880-1:2017 Semiconductor devices - Stress migration test standard - Part 1: Copper stress migration test standard
  • IEC 60749-39:2021 RLV Semiconductor devices - Mechanical and climatic test methods - Part 39: Measurement of moisture diffusivity and water solubility in organic materials used for semiconductor components
  • IEC 60749-39:2021 Semiconductor devices - Mechanical and climatic test methods - Part 39: Measurement of moisture diffusivity and water solubility in organic materials used for semiconductor components
  • IEC 60749-13:2018 Semiconductor devices - Mechanical and climatic test methods - Part 13: Salt atmosphere
  • IEC 60147-2:1963 Essential ratings and characteristics of semiconductor devices and general principles of measuring methods. Part 2 : General principles of measuring methods
  • IEC 60596:1978 Definitions of test method terms for semiconductor radiation detectors and scintillation counting
  • IEC 60749-34:2010 Semiconductor devices - Mechanical and climatic test methods - Part 34: Power cycling
  • IEC 60747-14-11:2021 Semiconductor devices - Part 14-11: Semiconductor sensors - Test method of surface acoustic wave-based integrated sensors for measuring ultraviolet, illumination and temperature
  • IEC 60749-30:2011 Semiconductor devices - Mechanical and climatic test methods - Part 30: Preconditioning of non-hermetic surface mount devices prior to reliability testing
  • IEC 60749-39:2006 Semiconductor devices - Mechanical and climatic test methods - Part 39: Measurement of moisture diffusivity and water solubility in organic materials used for semiconductor components

国家市场监督管理总局、中国国家标准化管理委员会, Principles of Semiconductor Testing

  • GB/T 1550-2018 Test methods for conductivity type of extrinsic semiconducting materials
  • GB/T 39771.2-2021 Optical radiation safety of LEDs—Part 2: Measurement methods
  • GB/T 37131-2018 Nanotechnologies—Test method of semiconductor nanopowder using UV-Vis diffuse reflectance spectroscopy

Professional Standard - Aerospace, Principles of Semiconductor Testing

  • QJ 259-1977 器件
  • QJ 257-1977 Semiconductor TTL Integrated Digital Circuit Testing Method
  • QJ 1528-1988 Semiconductor integrated circuit time base test method
  • QJ/Z 32-1977 Testing methods for semi-conductor integrated comparison amplifiers
  • QJ 260-1977 器件
  • QJ 1460-1988 Test method for broadband amplifier of semiconductor integrated circuit
  • QJ 2491-1993 Test methods for operational amplifiers in semiconductor integrated circuits
  • QJ 1526-1988 器件
  • QJ 2660-1994 Test method for pulse width modulator of semiconductor integrated circuit switching power supply
  • QJ 3293-2008 Safety management requirements for solid missile final assembly test
  • QJ 3044-1998 Semiconductor integrated circuit D/A converter and A/D converter test method

TR-TSE, Principles of Semiconductor Testing

  • TS 2643-1977 Test Procedures For Bemiconductor Detectors For Ionizing Radiation
  • TS 2552-1977 Essential Ratings And Characteristics Of Seraiconductor Devices And General Principles Of Measuring Methods Part 2: General Principles Of Measuring Methods
  • TS 3433-1979 TEST PROCEDURES FOR AMPLIFIERS AND PREAMPLIFIERS FOR SEMICONDUCTOR DETECTORS FOR IONIZING RADIATION

Lithuanian Standards Office , Principles of Semiconductor Testing

  • LST EN 62417-2010 Semiconductor devices - Mobile ion tests for metal-oxide semiconductor field effect transistors (MOSFETs) (IEC 62417:2010)
  • LST EN 62415-2010 Semiconductor devices - Constant current electromigration test (IEC 62415:2010)
  • LST EN 62416-2010 Semiconductor devices - Hot carrier test on MOS transistors (IEC 62416:2010)
  • LST EN 60749-38-2008 Semiconductor devices - Mechanical and climatic test methods - Part 38: Soft error test method for semiconductor devices with memory (IEC 60749-38:2008)
  • LST EN 62418-2010 Semiconductor devices - Metallization stress void test (IEC 62418:2010)
  • LST EN 60749-29-2011 Semiconductor devices - Mechanical and climatic test methods -- Part 29: Latch-up test (IEC 60749-29:2011)
  • LST EN 60191-6-16-2007 Mechanical standardization of semiconductor devices - Part 6-16: Glossary of semiconductor tests and burn-in sockets for BGA, LGA, FBGA and FLGA (IEC 60191-6-16:2007)
  • LST EN 60749-39-2006 Semiconductor devices - Mechanical and climatic test methods - Part 39: Measurement of moisture diffusivity and water solubility in organic materials used for semiconductor components (IEC 60749-39:2006)
  • LST EN 62373-2006 Bias-temperature stability test for metal-oxide, semiconductor, field-effect transistors (MOSFET) (IEC 62373:2006)
  • LST EN IEC 60749-30:2020 Semiconductor devices - Mechanical and climatic test methods - Part 30: Preconditioning of non-hermetic surface mount devices prior to reliability testing (IEC 60749-30:2020)
  • LST EN 60749-30-2005 Semiconductor devices. Mechanical and climatic test methods. Part 30: Preconditioning of non-hermetic surface mount devices prior to reliability testing (IEC 60749-30:2005)

Professional Standard - Post and Telecommunication, Principles of Semiconductor Testing

  • YD/T 701-1993 Test method for semiconductor laser diode assembly
  • YD/T 2001.2-2011 Semiconductor optoelectronic devices for fibre optic system applications.part 2:measuring methods

ECIA - Electronic Components Industry Association, Principles of Semiconductor Testing

  • EIA CB-5:1969 Recommended Test Procedure for Semiconductor Thermal Dissipating Devices

European Committee for Electrotechnical Standardization(CENELEC), Principles of Semiconductor Testing

  • EN 62418:2010 Semiconductor devices - Metallization stress void test
  • EN 60749-44:2016 Semiconductor devices - Mechanical and climatic test methods - Part 44: Neutron beam irradiated single event effect (SEE) test method for semiconductor devices
  • EN 60749-29:2011 Semiconductor devices - Mechanical and climatic test methods - Part 29: Latch-up test
  • EN 60749-39:2006 Semiconductor devices - Mechanical and climatic test methods Part 39: Measurement of moisture diffusivity and water solubility in organic materials used for semiconductor components
  • EN IEC 60749-30:2020 Semiconductor devices - Mechanical and climatic test methods - Part 30: Preconditioning of non-hermetic surface mount devices prior to reliability testing
  • EN 60749-34:2010 Semiconductor devices - Mechanical and climatic test methods - Part 34: Power cycling
  • EN IEC 60749-39:2022 Semiconductor devices - Mechanical and climatic test methods - Part 39: Measurement of moisture diffusivity and water solubility in organic materials used for semiconductor components
  • EN 60749-26:2014 Semiconductor devices - Mechanical and climatic test methods - Part 26: Electrostatic discharge (ESD) sensitivity testing - Human body model (HBM)
  • EN IEC 60749-26:2018 Semiconductor devices - Mechanical and climatic test methods - Part 26: Electrostatic discharge (ESD) sensitivity testing - Human body model (HBM)
  • HD 396-1979 Definitions of Test Method Terms for Semiconductor Radiation Detectors and Scintillation Counting

American National Standards Institute (ANSI), Principles of Semiconductor Testing

  • ANSI/IEEE 300:1988 Test Procedures for Semiconductor Charged-Particle Detectors
  • ANSI/ASTM D6095:2012 Test Method for Longitudinal Measurement of Volume Resistivity for Extruded Crosslinked and Thermoplastic Semiconducting Conductor and Insulation Shielding Materials
  • ANSI/UL 2360-2004 Test Methods for Determining the Combustibility Characteristics of Plastics Used in Semi-Conductor Tool Construction

Electronic Components, Assemblies and Materials Association, Principles of Semiconductor Testing

  • ECA CB 5-1969 Recommended Test Procedure for Semiconductor Thermal Dissipating Devices
  • ECA CB 5-1-1971 Recommended Test Procedure for Semiconductor Thermal Dissipating Devices Addendum to CB5

中华人民共和国国家质量监督检验检疫总局、中国国家标准化管理委员会, Principles of Semiconductor Testing

  • GB/T 14028-2018 Semiconductor integrated circuits—Measuring method of analogue switch
  • GB/T 35006-2018 Semiconductor integrated circuits—Measuring method of level converter
  • GB/T 36005-2018 Measuring methods of optical radiation safety for semiconductor lighting equipments and systems
  • GB/T 35007-2018 Semiconductor integrated circuits—Measuring method of low voltage differential signaling circuitry

Guizhou Provincial Standard of the People's Republic of China, Principles of Semiconductor Testing

  • DB52/T 1104-2016 Transient test method for junction-case thermal resistance of semiconductor devices

IEEE - The Institute of Electrical and Electronics Engineers@ Inc., Principles of Semiconductor Testing

  • IEEE 425-1957 TEST CODE for TRANSISTORS SEMICONDUCTOR DEFINITIONS and LEITER SYMBOLS
  • IEEE 300-1988 Standard Test Procedures for Semiconductor Charged-Particle Detectors
  • IEEE 300-1982 STANDARD TEST PROCEDURES FOR SEMICONDUCTOR CHARGED-PARTICLE DETECTORS
  • IEEE C62.35-1987 Standard Test Specifications for Avalanche Junction Semiconductor Surge-Protective Devices
  • IEEE PC62.35/D1-2018 Draft Standard for Test Methods for Silicon Avalanche Semiconductor Surge Protective Device Components
  • IEEE C62.35-2010 Standard Test Methods for Avalanche Junction Semiconductor Surge-Protective Device Components

National Metrological Verification Regulations of the People's Republic of China, Principles of Semiconductor Testing

Professional Standard - Machinery, Principles of Semiconductor Testing

  • JB/T 6307.1-1992 Test method for power semiconductor module Rectifier diode pair of arms
  • JB/T 6307.2-1992 Test method for power semiconductor module Single-phase bridge rectifier diodes
  • JB/T 6307.3-1992 Test method for power semiconductor module Triphase bridge rectifier diode
  • JB/T 4219-1999 Type designation of measuring equipments for power semiconductor devices
  • JB/T 6307.4-1992 Test method for power semiconductor module Arm and pair of arms of bipolar transistor
  • JB/T 6307.5-1994 Power Semiconductor Module Test Methods Bipolar Transistors Single-Phase Bridge and Three-Phase Bridge

Military Standard of the People's Republic of China-General Armament Department, Principles of Semiconductor Testing

  • GJB 9147-2017 Semiconductor integrated circuit operational amplifier test methods

American Society for Testing and Materials (ASTM), Principles of Semiconductor Testing

  • ASTM E1161-95 Standard Test Method for Radiologic Examination of Semiconductors and Electronic Components
  • ASTM D4325-20 Standard Test Methods for Nonmetallic Semi-Conducting and Electrically Insulating Rubber Tapes
  • ASTM F637-85(1994)e1 Standard Specification for Format, Physical Properties, and Test Methods for 19 and 35 mm Testable Tape Carrier for Perimeter Tape Carrier-Bonded Semiconductor Devices
  • ASTM D6095-12(2018) Standard Test Method for Longitudinal Measurement of Volume Resistivity for Extruded Crosslinked and Thermoplastic Semiconducting Conductor and Insulation Shielding Materials
  • ASTM D6095-12(2023) Standard Test Method for Longitudinal Measurement of Volume Resistivity for Extruded Crosslinked and Thermoplastic Semiconducting Conductor and Insulation Shielding Materials
  • ASTM D6095-06 Standard Test Method for Longitudinal Measurement of Volume Resistivity for Extruded Crosslinked and Thermoplastic Semiconducting Conductor and Insulation Shielding Materials
  • ASTM D6095-12 Standard Test Method for Longitudinal Measurement of Volume Resistivity for Extruded Crosslinked and Thermoplastic Semiconducting Conductor and Insulation Shielding Materials

Taiwan Provincial Standard of the People's Republic of China, Principles of Semiconductor Testing

  • CNS 6802-1980 Standard Test Procedured for Noise Margin Measurements for Semiconductor Logic Gating Microcircuits
  • CNS 8104-1981 Method for Measuring MOSFET Linear Threshold Voltage
  • CNS 8106-1981 Method for Measuring MOSFET Saturated Threshold Voltage
  • CNS 5751-1980 Method of Test for Apparent Density of Ceramics for Electron Device and Semiconductor Application

CU-NC, Principles of Semiconductor Testing

  • NC 34-54-1987 Agricultural Machineries and Implements. Trailer and Semitrailer. Methodology for Tests Realization

National Metrological Technical Specifications of the People's Republic of China, Principles of Semiconductor Testing

  • JJF 1895-2021 Calibration Specification for Semiconductor Devices DC and Low Frequency Parameters Test Equipments

未注明发布机构, Principles of Semiconductor Testing

  • BS IEC 62526:2007(2010) Standard for Extensions to Standard Test Interface Language (STIL) for Semiconductor Design Environments

ZA-SANS, Principles of Semiconductor Testing

  • SANS 6281-1:2007 Test methods for impregnated paper-insulated electric cables Part 1: Tests on insulating and semi-conducting paper
  • SANS 6284-2:2007 Test methods for cross-linked polyethylene (XLPE) insulated electric cables Part 2: Tests on extruded semi-conducting screens

AENOR, Principles of Semiconductor Testing

  • UNE-EN 60749-2:2003 Semiconductor devices - Mechanical and climatic test methods -- Part 2: Low air pressure.
  • UNE-EN 60749-30:2005/A1:2011 Semiconductor devices - Mechanical and climatic test methods - Part 30: Preconditioning of non-hermetic surface mount devices prior to reliability testing
  • UNE-EN 60749-30:2005 Semiconductor devices - Mechanical and climatic test methods -- Part 30: Preconditioning of non-hermetic surface mount devices prior to reliability testing
  • UNE-EN 60749-12:2003 Semiconductor devices - Mechanical and climatic test methods -- Part 12: Vibration, variable frequency.
  • UNE-EN 60749-10:2003 Semiconductor devices - Mechanical and climatic test methods -- Part 10: Mechanical shock.

KR-KS, Principles of Semiconductor Testing

  • KS C IEC 60749-2-2020 Semiconductor devices — Mechanical and climatic test methods — Part 2: Low air pressure
  • KS C IEC 60749-21-2020 Semiconductor devices — Mechanical and climatic test methods — Part 21: Solderability
  • KS C IEC 60749-13-2020 Semiconductor devices — Mechanical and climatic test methods — Part 13: Salt atmosphere
  • KS C IEC 60749-22-2020 Semiconductor devices — Mechanical and climatic test methods — Part 22: Bond strength
  • KS C IEC 60749-6-2020 Semiconductor devices — Mechanical and climatic test methods — Part 6: Storage at high temperature

European Committee for Standardization (CEN), Principles of Semiconductor Testing

  • HD 396 S1-1979 Definitions of test method terms for semiconductor radiation detectors and scintillation counting

Underwriters Laboratories (UL), Principles of Semiconductor Testing

  • UL 2360-2000 Test Methods for Determining the Combustibility Characteristics of Plastics Used in Semi-Conductor Tool Construction

Hebei Provincial Standard of the People's Republic of China, Principles of Semiconductor Testing

  • DB13/T 5120-2019 Specifications for DC performance test of FP and DFB semiconductor laser chips for optical communication

AT-OVE/ON, Principles of Semiconductor Testing

  • OVE EN IEC 63275-2:2021 Semiconductor devices - Reliability test method for silicon carbide discrete metal-oxide semiconductor field effect transistors - Part 2: Test method for bipolar degradation due to body diode operation (IEC 47/2680/CDV) (english version)

Professional Standard - Building Materials, Principles of Semiconductor Testing

  • JC/T 2133-2012 Determination of impurities in silica sol for polishing solution in semiconductor industry.Inductively coupled plasma atomic emission spectrometric method

Professional Standard - Agriculture, Principles of Semiconductor Testing

  • NY/T 1860.4-2010 Guidance on the determination of physico-chemical properties of pesticides.Part 4:Technical material stability

PL-PKN, Principles of Semiconductor Testing

  • PN-EN IEC 60749-30-2021-05 E Semiconductor devices -- Mechanical and climatic test methods -- Part 30: Preconditioning of non-hermetic surface mount devices prior to reliability testing (IEC 60749-30:2020)




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