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Semiconductor Test System

Semiconductor Test System, Total:499 items.

In the international standard classification, Semiconductor Test System involves: Nuclear energy engineering, Semiconductor devices, Optoelectronics. Laser equipment, Fibre optic communications, Integrated circuits. Microelectronics, Software development and system documentation, Inorganic chemicals, Radiation measurements, Testing of metals, Linear and angular measurements, Electricity. Magnetism. Electrical and magnetic measurements, Semiconducting materials, Rectifiers. Convertors. Stabilized power supply, Mechanical structures for electronic equipment, Vocabularies, Graphical symbols, Applications of information technology, Electronic components in general, Printed circuits and boards, Components for electrical equipment, Electromechanical components for electronic and telecommunications equipment, Quality, Space systems and operations, Power transmission and distribution networks, Electrical and electronic testing, Industrial automation systems, Resistors, Surface treatment and coating, Insulating materials, Electrical wires and cables, Metrology and measurement in general, Farming and forestry, Insulating fluids, Vacuum technology, Languages used in information technology, Plastics, Protection against fire, Rubber and plastics products.

Professional Standard - Electron, Semiconductor Test System

• SJ 20233-1993 Verification regulation of model IMPACT-II semiconductor discrete device test sysytem
• SJ/T 2215-2015 Measuring methods for semiconductor photocouplers
• SJ 2749-1987 Method of measurement for semiconductor laser diodes
• SJ 2214.1-1982 General procedures of measurement for semiconductor photodiodes and phototransistors
• SJ/T 11394-2009 Measure methods of semiconductor light emitting diodes
• SJ 20788-2000 Measurment method for thermal impedance of semiconductor diodes
• SJ 2355.1-1983 General procedures of measurement for light-emitting deivces
• SJ 2215.1-1982 General procedures of measurement for semiconductor photocouplers
• SJ 20787-2000 Measurment method for thermal resistance of semiconductor bridge rectifieres
• SJ/T 11399-2009 Measurement methods for chips of light emitting diodes
• SJ/T 11405-2009 Semiconductor optoelectronic devices for fibre optic system applications.Part 2:Measuring methods
• SJ 2355.5-1983 Method of measurement for luminous intensity and half-intensity angle of light-emitting devices
• SJ 2065-1982 Testing method for diffusion furnace for semiconductor device manufacturing
• SJ 2355.6-1983 Method of measurement for luminous flux of light-emitting devices
• SJ 2355.4-1983 Methods of measurement for junction capacitance of light-emitting devices
• SJ/T 2214-2015 Measuring methods for semiconductor photodiode and phototransistor
• SJ 2355.3-1983 Method of measurement for reverse current of light-emitting devices
• SJ 2355.2-1983 Method of measurement for forward voltage drop of light-emitting devices
• SJ/T 10482-1994 Test method for characterizing semiconductor deep levels by transient capacitance techniques
• SJ 20026-1992 Measuring methods for gas sensors of metal-oxide semiconductor
• SJ 2214.3-1982 Method of measurement for dark current of semiconductor photodiodes
• SJ 2214.5-1982 Method of measurement for junction capacitance of semiconductor photodiodes
• SJ 2214.8-1982 Method of measurement for dark current voltage of semiconductor phototransistors
• SJ 2658.1-1986 Methods of measurement for semiconductor infrared diodes General rules
• SJ 2658.4-1986 Methods of measurement for semiconductor infrared diodes Methods of measurement for capacitance
• SJ 2355.7-1983 Method of measurement for peak emission wavelength and spectral radiation bandwidth of light-emitting devices
• SJ 2658.13-1986 Methods of measurement for semiconductor infrared diodes Methods of measurement for output optical power temperature coefficient
• SJ 2214.2-1982 Method of measurement for forward voltage of semiconductor photodiodes
• SJ 2214.7-1982 Method of measurement for saturation voltage of semiconductor phototransistors
• SJ 2214.10-1982 Method of measurement for light current of semiconductor photodiodes and phototransistors
• SJ 2658.2-1986 Methods of measurement for semiconductor infrared diodes Methods of measurement for forward voltage drop
• SJ 2658.3-1986 Methods of measurement for semiconductor infrared diodes Methods of measurement for backward voltage
• SJ 2215.6-1982 Method of measurement for junction capacitance of semiconductor photocouplers (diodes)
• SJ 2215.8-1982 Method of measurement for output saturation voltage of semiconductor photocouplers (diodes)
• SJ/T 11818.1-2022 Semiconductor UV-emitting diodes Part 1: Test methods
• SJ 2658.7-1986 Methods of measurement for semiconductor infrared diodes Methods of measurement for radiant flux
• SJ 2658.10-1986 Methods of measurement for semiconductor infrared diodes Methods of measurement for modulated wideband
• SJ 2658.12-1986 Methods of measurement for semiconductor infrared diodes Methods of measurement for peak emission wavelength and spectral half width
• SJ 2215.14-1982 Method of measurement for input-to-output isolation voltage of semiconductor photocouplers
• SJ 2757-1987 Method of measurement by infra-red reflection for charge carrier concentraiton of heavily doped semiconductors
• SJ 2215.3-1982 Method of measurement for forward current of semiconductor photocouplers (diodes)
• SJ 2214.4-1982 Method of measurement for reverse break-down voltage of semiconductor photodiodes
• SJ 2215.4-1982 Method of measurement for reverse current of semiconductor photocouplers (diodes)
• SJ 2215.10-1982 Method of measurement for direct current transfer ratio of semiconductor photocouplers
• SJ 2215.12-1982 Method of measurement for input-to-output capacitance of semiconductor photocouplers
• SJ/T 10735-1996 Semiconductor integrated circuits General principles of measuring methods for TTL circuits
• SJ/T 10736-1996 Semiconductor integrated circuits - General principles of measuring methods for HTL circuits
• SJ/T 10737-1996 Semiconductor integrated circuits - General principles of measuring methods for ECL circuits
• SJ/T 10741-2000 Semiconductor integrated circuits General principles of measuring methods for CMOS circuits
• SJ/T 10741-1996 Semiconductor integrated circuits--General principles of measuring methods for CMOS circuits
• SJ 2215.2-1982 Method of measurement for forward voltage of semiconductor photocouplers (diodes)
• SJ 2215.13-1982 Method of measurement for input-to-output isolation resistance of semiconductor photocouplers
• SJ 2658.6-1986 Methods of measurement for semiconductor infrared diodes Methods of measurement for output optical power
• SJ 2658.8-1986 Methods of measurement for semiconductor infrared diodes Methods of measurement for normal radiance
• SJ 2658.9-1986 Methods of measurement for semiconductor infrared diodes Methods of measurement for the intensity space distribution and half-intensity angle of radiation
• SJ 2658.5-1986 Methods of measurement for semiconductor infrared diodes Methods of measurement for forward series resistance
• SJ 2658.11-1986 Methods of measurement for semiconductor infrared diodes Methods of measurement for pulse response characteristics
• SJ/T 10880-1996 Semiconductor integrated audio circuits - General principles of measuring methods for stereo decoders
• SJ/T 10804-2000 Semiconductor integrated circuits.General principles of measuring methods for level translator
• SJ/T 10805-2000 Semiconductor integrated circuits.General principles of measuring methods for voltage comparators
• SJ 2215.5-1982 Method of measurement for reverse breakdown voltage of semiconductor photocouplers (diodes)
• SJ 2215.9-1982 Method of measurement for reverse cut-off current of semiconductor photocouplers transistors
• SJ/T 10882-1996 Semiconductor integrated circuits - General principles of measuring methods for linear amplifiers
• SJ/T 10803-1996 Semiconductor integrated circuits used as interface circuits - General principles of measuring methods for line circuits
• SJ/T 11820-2022 Technical requirements and measurement methods for DC parameter test equipment of semiconductor discrete devices
• SJ 2214.9-1982 Method of measurement for pulse rise and fall time of semiconductor photodiodes and phototransistors
• SJ/T 10739-1996 Semiconductor integrated circuits - General principles of measuring methods for MOS random access memories

British Standards Institution (BSI), Semiconductor Test System

• BS EN IEC 63364-1:2022 Semiconductor devices. Semiconductor devices for IoT system - Test method of sound variation detection
• BS EN 62007-2:2000 Semiconductor optoelectronic devices for fibre optic system applications - Measuring methods
• BS EN 62007-2:2009 Semiconductor optoelectronic devices for fibre optic system applications - Measuring methods
• 21/30432536 DC BS EN IEC 63364-1. Semiconductor devices. Semiconductor devices for IOT system. Part 1. Test method of sound variation detection
• BS IEC 62951-5:2019 Semiconductor devices. Flexible and stretchable semiconductor devices - Test method for thermal characteristics of flexible materials
• BS IEC 62951-7:2019 Semiconductor devices. Flexible and stretchable semiconductor devices - Test method for characterizing the barrier performance of thin film encapsulation for flexible organic semiconductor
• BS IEC 62951-6:2019 Semiconductor devices. Flexible and stretchable semiconductor devices - Test method for sheet resistance of flexible conducting films
• BS IEC 62373-1:2020 Semiconductor devices. Bias-temperature stability test for metal-oxide, semiconductor, field-effect transistors (MOSFET) - Fast BTI test for MOSFET
• BS EN 60191-4:2014 Mechanical standardization of semiconductor devices. Coding system and classification into forms of package outlines for semiconductor device packages
• BS EN 60191-4:2014+A1:2018 Mechanical standardization of semiconductor devices - Coding system and classification into forms of package outlines for semiconductor device packages
• BS IEC 62951-1:2017 Semiconductor devices. Flexible and stretchable semiconductor devices - Bending test method for conductive thin films on flexible substrates
• 14/30297227 DC BS EN 62880-1. Semiconductor devices. Wafer level reliability for semiconductor devices. Copper stress migration test method
• 22/30443678 DC BS EN 60749-34-1. Semiconductor devices. Mechanical and climatic test methods - Part 34-1. Power cycling test for power semiconductor module
• BS EN 62007-1:2000 Semiconductor optoelectronic devices for fibre optic system applications - Essential ratings and characteristics
• BS IEC 63275-1:2022 Semiconductor devices. Reliability test method for silicon carbide discrete metal-oxide semiconductor field effect transistors - Test method for bias temperature instability
• 17/30366375 DC BS IEC 62373-1. Semiconductor devices. Bias-temperature stability test for metal-oxide semiconductor field-effect transistors (MOSFET). Part 1. Fast BTI Test method
• 18/30381548 DC BS EN 62373-1. Semiconductor devices. Bias-temperature stability test for metal-oxide semiconductor field-effect transistors (MOSFET). Part 1. Fast BTI Test method
• BS IEC 60747-18-3:2019 Semiconductor devices. Semiconductor bio sensors. Fluid flow characteristics of lens-free CMOS photonic array sensor package modules with fluidic system
• BS IEC 60747-14-11:2021 Semiconductor devices - Semiconductor sensors. Test method of surface acoustic wave-based integrated sensors for measuring ultraviolet, illumination and temperature
• BS IEC 62951-9:2022 Semiconductor devices. Flexible and stretchable semiconductor devices - Performance testing methods of one transistor and one resistor (1T1R) resistive memory cells
• BS IEC 62880-1:2017 Semiconductor devices. Stress migration test standard - Copper stress migration test standard
• BS ISO 18257:2016 Space systems. Semiconductor integrated circuits for space applications. Design requirements
• BS EN 60749-34:2010 Semiconductor devices. Mechanical and climatic test methods. Power cycling
• BS EN 60749-6:2017 Semiconductor devices. Mechanical and climatic test methods - Storage at high temperature
• PD ES 59008-4-1:2001 Data requirements for semiconductor die. Specific requirements and recommendations. Test and quality
• BS IEC 60747-18-1:2019 Semiconductor devices. Semiconductor bio sensors. Test method and data analysis for calibration of lens-free CMOS photonic array sensors
• BS EN 62047-3:2006 Semiconductor devices - Micro-electromechanical devices - Thin film standard test piece for tensile testing
• IEC TR 63357:2022 Semiconductor devices. Standardization roadmap of fault test method for automotive vehicles
• BS EN 60749-39:2006 Semiconductor devices - Mechanical and climatic test methods - Measurement of moisture diffusivity and water solubility in organic materials used for semiconductor components
• BS IEC 62951-8:2023 Semiconductor devices. Flexible and stretchable semiconductor devices - Test method for stretchability, flexibility, and stability of flexible resistive memory
• BS IEC 62830-5:2021 Semiconductor devices. Semiconductor devices for energy harvesting and generation. Test method for measuring generated power from flexible thermoelectric devices
• BS EN 62047-4:2010 Semiconductor devices. Micro-electromechanical devices. Generic specification for MEMS
• BS IEC 62830-4:2019 Semiconductor devices. Semiconductor devices for energy harvesting and generation - Test and evaluation methods for flexible piezoelectric energy harvesting devices
• BS EN IEC 60749-39:2022 Tracked Changes. Semiconductor devices. Mechanical and climatic test methods. Measurement of moisture diffusivity and water solubility in organic materials used for semiconductor components
• BS EN 60749-9:2017 Semiconductor devices. Mechanical and climatic test methods - Permanence of marking
• BS EN 60749-3:2017 Semiconductor devices. Mechanical and climatic test methods - External visual examination
• BS IEC 63284:2022 Semiconductor devices. Reliability test method by inductive load switching for gallium nitride transistors
• BS EN 60749-29:2011 Semiconductor devices. Mechanical and climatic test methods. Latch-up test
• 20/30406230 DC BS IEC 63275-1. Semiconductor devices. Reliability test method for silicon carbide discrete metal-oxide semiconductor field effect transistors. Part 1. Test method for bias temperature instability
• BS EN 60749-4:2017 Semiconductor devices. Mechanical and climatic test methods - Damp heat, steady state, highly accelerated stress test (HAST)
• 13/30284029 DC BS EN 60191-6-16. Mechanical standardization of semiconductor devices. Part 6-16. Glossary of semiconductor tests and burn-in sockets for BGA, LGA, FBGA and FLGA
• PD IEC TR 60747-5-12:2021 Semiconductor devices. Optoelectronic devices. Light emitting diodes. Test method of LED efficiencies
• 18/30362458 DC BS IEC 60747-14-11. Semiconductor devices. Part 14-11. Semiconductor sensors. Test method of surface acoustic wave based integrated sensor for measuring ultra violet, illumination and temperature
• 19/30390371 DC BS IEC 60747-14-11. Semiconductor devices. Part 14-11. Semiconductor sensors. Test method of surface acoustic wave based integrated sensor for measuring ultra violet, illumination and temperature
• 18/30355426 DC BS EN 62830-5. Semiconductor devices. Semiconductor devices for energy harvesting and generation. Part 5. Test method for measuring generated power from flexible thermoelectric devices
• BS EN 60749-26:2006 Semiconductor devices - Mechanical and climatic test methods - Electrostatic discharge (ESD) sensitivity testing - Human body model (HBM)
• BS EN 60749-26:2014 Semiconductor devices. Mechanical and climatic test methods. Electrostatic discharge (ESD) sensitivity testing. Human body model (HBM)
• 18/30361905 DC BS EN 60747-18-3. Semiconductor devices. Part 18-3. Semiconductor bio sensors. Fluid flow characteristics of lens-free CMOS photonic array sensor package module with fluidic system
• BS IEC 62526:2007 Standard for extensions to standard test interface language (STIL) for semiconductor design environments
• BS EN 62047-18:2013 Semiconductor devices. Micro-electromechanical devices. Bend testing methods of thin film materials
• BS EN IEC 60749-17:2019 Tracked Changes. Semiconductor devices. Mechanical and climatic test methods. Neutron irradiation

Association Francaise de Normalisation, Semiconductor Test System

• NF EN IEC 63364-1:2023 Dispositifs à semiconducteurs - Dispositifs à semiconducteurs pour système IDO - Partie 1 : méthode d'essai de détection de variation acoustique
• NF EN 62415:2010 Dispositifs à semiconducteurs - Essai d'électromigration en courant constant
• NF EN 62417:2010 Dispositifs à semiconducteurs - Essais d'ions mobiles pour transistors à semiconducteur à oxyde métallique à effet de champ (MOSFET)
• NF C93-801-2*NF EN 62007-2:2009 Semiconductor optoelectronic devices for fibre optic system applications - Part 2 : measuring methods
• NF EN 62416:2010 Dispositifs à semiconducteurs - Essai de porteur chaud sur les transistors MOS
• NF C53-228:1989 Semiconductor convertors. Switches for uninterruptible power systems (vps switches).
• NF EN 60749-44:2016 Dispositifs à semiconducteurs - Méthodes d'essais mécaniques et climatiques - Partie 44 : méthode d'essai des effets d'un événement isolé (SEE) irradié par un faisceau de neutrons pour des dispositifs à semiconducteurs
• NF EN 60749-38:2008 Dispositifs à semiconducteurs - Méthodes d'essais mécaniques et climatiques - Partie 38 : méthode d'essai des erreurs logicielles pour les dispositifs à semiconducteurs avec mémoire
• NF EN 62418:2011 Dispositifs à semi-conducteurs - Essai sur les cavités dues aux contraintes de la métallisation
• NF EN 60191-4/A1:2018 Normalisation mécanique des dispositifs à semiconducteurs - Partie 4 : système de codification et classification en formes des structures des boîtiers pour dispositifs à semiconducteurs
• NF EN 60191-4:2014 Normalisation mécanique des dispositifs à semiconducteurs - Partie 4 : système de codification et classification en formes des structures des boîtiers pour dispositifs à semiconducteurs
• NF EN 62007-2:2009 Dispositifs optoélectroniques à semiconducteurs pour application dans les systèmes à fibres optiques - Partie 2 : méthodes de mesure
• NF C96-013-4/A2*NF EN 60191-4/A2:2003 Mechanical standardization of semiconductor devices - Part 4 : coding system and classification into forms of package outlines for semiconductor device packages.
• NF C96-013-4*NF EN 60191-4:2014 Mechanical standardization of semiconductor devices - Part 4 : coding system and classification into forms of package outlines for semiconductor device packages
• NF C96-022-44*NF EN 60749-44:2016 Semiconductor devices - Mechanical and climatic test methods - Part 44 : neutron beam irradiated single event effect (SEE) test method for semiconductor devices
• NF C96-013-4*NF EN 60191-4:2000 Mechanical standardization of semiconductor devices - Part 4 : coding system and classification into forms of package outlines for semiconductor device packages.
• NF C96-013-4/A1*NF EN 60191-4/A1:2002 Mechanical standardization of semiconductor devices - Part 4 : coding system and classification into forms of package outlines for semiconductor device packages.
• NF C96-013-4/A1*NF EN 60191-4/A1:2018 Mechanical standardization of semiconductor devices - Part 4 : coding system and classification into forms of package outlines for semiconductor device packages
• NF C96-050-9*NF EN 62047-9:2012 Semiconductor devices - Micro-electromechanical devices - Part 9 : wafer to wafer bonding strength measurement for MEMS.
• NF EN 60749-29:2012 Dispositifs à semiconducteurs - Méthodes d'essais mécaniques et climatiques - Partie 29 : essai de verrouillage
• NF C53-225:1985 Testing of semiconductor valves for high-voltage D.C. Power transmission.
• NF EN 62047-11:2014 Dispositifs à semiconducteurs - Dispositifs microélectromécaniques - Partie 11 : méthode d'essai pour les coefficients de dilatation thermique linéaire des matériaux autonomes pour systèmes microélectromécaniques
• NF C86-503:1986 Semiconductor devices. Harmonized system of quality assessment for electronic components. Phototransistors, photodarlington transistors and phototrasistor-arrays. Blank detail specification CECC 20 003.
• NF C83-282:1987 Harmonized system of quality assessment for electronic components. Surge suppression varistors. Sectional specification. Blank detail specification.
• NF EN 60749-8:2003 Dispositifs à semiconducteurs - Méthodes d'essais mécaniques et climatiques - Partie 8 : étanchéité
• NF EN 60749-1:2003 Dispositifs à semiconducteurs - Méthodes d'essais mécaniques et climatiques - Partie 1 : généralités
• NF ISO 10677:2011 Céramiques techniques - Sources lumineuses UV destinée aux essais des matériaux photocatalytiques semi-conducteurs
• NF EN 60749-21:2012 Dispositifs à semiconducteurs - Méthodes d'essais mécaniques et climatiques - Partie 21 : brasabilité
• NF EN 60749-2:2002 Dispositifs à semiconducteurs - Méthodes d'essais mécaniques et climatiques - Partie 2 : basse pression atmosphérique
• NF EN IEC 60749-39:2022 Dispositifs à semiconducteurs - Méthodes d'essais mécaniques et climatiques - Partie 39 : mesure de la diffusivité d'humidité et de l'hydrosolubilité dans les matériaux organiques utilisés dans les composants à semiconducteurs
• NF EN 62373:2006 Essai de stabilité de température en polarisation pour transistors à effet de champ métal-oxyde-semiconducteur (MOSFET)
• NF C86-411:1987 SEMICONDUCTOR DEVICES. HARMONIZED SYSTEM OF QUALITY ASSESSMENT FOR ELECTRONIC COMPONENTS. FILM AND HYBRID INTEGRATED CIRCUITS. SECTIONAL SPECIFICATION. (SPECIFICATION CECC 63 100).
• NF EN 62047-12:2012 Dispositifs à semiconducteurs - Dispositifs microélectromécaniques - Partie 12 : méthode d'essai de fatigue en flexion des matériaux en couche mince utilisant les vibrations à la résonance des structures à systèmes microélectromécaniques (M...
• NF EN 60749-6:2017 Dispositifs à semiconducteurs - Méthodes d'essais mécaniques et climatiques - Partie 6 : stockage à haute température
• NF EN 60749-25:2003 Dispositifs de semiconducteurs - Méthodes d'essais mécaniques et climatiques - Partie 25 : cycles de température
• NF EN 60749-34:2011 Dispositifs à semiconducteurs - Méthodes d'essais mécaniques et climatiques - Partie 34 : cycles en puissance
• NF EN IEC 60749-13:2018 Dispositifs à semiconducteurs - Méthodes d'essais mécaniques et climatiques - Partie 13 : atmosphère saline
• NF EN IEC 60749-17:2019 Dispositifs à semiconducteurs - Méthodes d'essais mécaniques et climatiques - Partie 17 : irradiation aux neutrons
• NF C96-022-39*NF EN 60749-39:2006 Semiconductor devices - Mechanical and climatic test methods - Part 39 : measurement of moisture diffusivity and water solubility in organic materials used for semiconductor components

General Administration of Quality Supervision, Inspection and Quarantine of the People‘s Republic of China, Semiconductor Test System

• GB/T 11685-2003 Measurement procedures for semiconductor X-ray detector system and semiconductor X-ray energy spectrometers
• GB/T 31359-2015 Test methods of semiconductor lasers
• GB/T 42835-2023 Semiconductor Integrated Circuit System on Chip (SoC)
• GB/T 5201-1994 Test procedures for semiconductor charged particle detectors
• GB/T 1550-1997 Standard methods for measuring conductivity type of extrinsic semiconducting materials
• GB/T 13974-1992 Test methods for semiconductor deviece curve tracers
• GB/T 6616-2023 Non-contact eddy current method for testing semiconductor wafer resistivity and semiconductor film sheet resistance
• GB/T 42975-2023 Semiconductor integrated circuit driver test methods
• GB/T 10236-2006 Guide for compatibility and protection of interference effects between semiconductor convertors and power supply system
• GB/T 42838-2023 Semiconductor Integrated Circuit Hall Circuit Test Method
• GB/T 43061-2023 Semiconductor integrated circuit PWM controller testing method
• GB/T 42676-2023 X-ray Diffraction Method for Testing the Quality of Semiconductor Single Crystal
• GB/T 36477-2018 Semiconductor integrated circuit.Measuring methods for flash memory
• GB/T 4377-2018 Semiconductor integrated circuits.Measuring method of voltage regulators
• GB/T 15653-1995 Measuring methods for gas sensors of metal-oxide semiconductor
• GB/T 43040-2023 Semiconductor integrated circuit AC/DC converter testing method
• GB/T 42970-2023 Semiconductor integrated circuit video encoding and decoding circuit testing methods
• GB/T 14862-1993 Junction-to-case thermal resistance test methods of packages for semiconductor integrated circuits
• GB/T 8446.2-1987 Measuring method of thermal resistance and input fluid-output fluid pressure difference of heat sink for power semiconductor device
• GB/T 14028-1992 General principles of measuring methods of analogue switches for semiconductor integrated circuits
• GB/T 14030-1992 General principles of measuring methods of timer circuits for semiconductor integrated circuits
• GB/T 42848-2023 Test method for direct digital frequency synthesizer of semiconductor integrated circuit
• GB 14030-1992 Basic principles of semiconductor integrated circuit time-based circuit testing methods
• GB 14028-2018 Basic principles of semiconductor integrated circuit analog switch test methods
• GB 35007-2018 Semiconductor integrated circuit low voltage differential signal circuit testing method
• GB/T 6798-1996 Semiconductor integrated circuits. General principles of measuring methods of voltage comparators
• GB/T 4377-1996 Semiconductor integrated circuits. General principles of measuring methods of voltage regulator
• GB/T 14031-1992 General principles of measuring methods of analogue phase-loop for semiconductor integrated circuits
• GB/T 14032-1992 General principles of measuring methods of digital phase-locked loop for semiconductor integrated circuits
• GB/T 14029-1992 General principles of measuring methods of analogue multiplier for semiconductor integrated circuits
• GB 14029-1992 Basic principles of semiconductor integrated circuit analog multiplier testing methods
• GB 14031-1992 Basic principles of semiconductor integrated circuit analog phase-locked loop testing methods
• GB 14032-1992 Basic principles of digital phase-locked loop testing methods for semiconductor integrated circuits
• GB/T 4326-1984 Extrinsic semiconductor single crystals--Measurement of Hall mobility and Hall coefficient
• GB/T 4326-2006 Extrinsic semiconductor single crystals measurement of Hall mobility and Hall coefficient
• GB 4326-1984 Extrinsic semiconductor single crystals-measurement of Hall mobility and Hall coefficient
• GB/T 15136-1994 General principles of measuring methods for quartz clock and watch circuits of semiconductor integrated circuits
• GB/T 43226-2023 Single-event soft error time domain testing method for semiconductor integrated circuits used in aerospace applications

ES-UNE, Semiconductor Test System

• UNE-EN IEC 63364-1:2023 Semiconductor devices - Semiconductor devices for IOT system - Part 1: Test method of sound variation detection (Endorsed by Asociación Española de Normalización in March of 2023.)
• UNE-EN 62415:2010 Semiconductor devices - Constant current electromigration test (Endorsed by AENOR in September of 2010.)
• UNE-EN 62417:2010 Semiconductor devices - Mobile ion tests for metal-oxide semiconductor field effect transistors (MOSFETs) (Endorsed by AENOR in September of 2010.)
• UNE-EN 62416:2010 Semiconductor devices - Hot carrier test on MOS transistors (Endorsed by AENOR in September of 2010.)
• UNE-EN 62418:2010 Semiconductor devices - Metallization stress void test (Endorsed by AENOR in October of 2010.)
• UNE-EN 60749-38:2008 Semiconductor devices- Mechanical and climatic test methods- Part 38: Soft error test method for semiconductor devices with memory (Endorsed by AENOR in September of 2008.)
• UNE-EN 60749-44:2016 Semiconductor devices - Mechanical and climatic test methods - Part 44: Neutron beam irradiated single event effect (SEE) test method for semiconductor devices (Endorsed by AENOR in December of 2016.)
• UNE-EN 300386 V1.5.1:2016 Semiconductor devices - Mechanical and climatic test methods - Part 44: Neutron beam irradiated single event effect (SEE) test method for semiconductor devices (Endorsed by AENOR in December of 2016.)
• UNE-EN 62007-2:2009 Semiconductor optoelectronic devices for fibre optic system applications -- Part 2: Measuring methods (Endorsed by AENOR in June of 2009.)
• UNE-EN 60191-4:2014/A1:2018 Mechanical standardization of semiconductor devices - Part 4: Coding system and classification into forms of package outlines for semiconductor device packages (Endorsed by Asociación Española de Normalización in June of 2018.)
• UNE-EN 60749-29:2011 Semiconductor devices - Mechanical and climatic test methods - Part 29: Latch-up test (Endorsed by AENOR in November of 2011.)
• UNE-EN 60191-4:2014 Mechanical standardization of semiconductor devices - Part 4: Coding system and classification into forms of package outlines for semiconductor device packages (Endorsed by AENOR in May of 2014.)
• UNE-EN 62047-11:2013 Semiconductor devices - Micro-electromechanical devices - Part 11: Test method for coefficients of linear thermal expansion of free-standing materials for micro-electromechanical systems (Endorsed by AENOR in November of 2013.)
• UNE-EN IEC 60749-39:2022 Semiconductor devices - Mechanical and climatic test methods - Part 39: Measurement of moisture diffusivity and water solubility in organic materials used for semiconductor components (Endorsed by Asociación Española de Normalización in March of 2022.)
• UNE-EN 60191-6-16:2007 Mechanical standardization of semiconductor devices -- Part 6-16: Glossary of semiconductor tests and burn-in sockets for BGA, LGA, FBGA and FLGA (IEC 60191-6-16:2007). (Endorsed by AENOR in October of 2007.)
• UNE-EN 60749-21:2011 Semiconductor devices - Mechanical and climatic test methods - Part 21: Solderability (Endorsed by AENOR in November of 2011.)
• UNE-EN IEC 60749-13:2018 Semiconductor devices - Mechanical and climatic test methods - Part 13: Salt atmosphere (Endorsed by Asociación Española de Normalización in May of 2018.)
• UNE-EN 62373:2006 Bias-temperature stability test for metal-oxide, semiconductor, field-effect transistors (MOSFET) (IEC 62373:2006). (Endorsed by AENOR in November of 2006.)
• UNE-EN IEC 60749-12:2018 Semiconductor devices - Mechanical and climatic test methods - Part 12: Vibration, variable frequency (Endorsed by Asociación Española de Normalización in April of 2018.)
• UNE-EN IEC 60749-17:2019 Semiconductor devices - Mechanical and climatic test methods - Part 17: Neutron irradiation (Endorsed by Asociación Española de Normalización in June of 2019.)

International Electrotechnical Commission (IEC), Semiconductor Test System

• IEC 63364-1:2022 Semiconductor devices - Semiconductor devices for IoT system - Part 1: Test method of sound variation detection
• IEC 62416:2010 Semiconductor devices - Hot carrier test on MOS transistors
• IEC 62007-2:1997 Semiconductor optoelectronic devices for fibre optic system applications - Part 2: Measuring methods
• IEC 60191-4:2013+AMD1:2018 CSV Mechanical standardization of semiconductor devices - Part 4: Coding system and classification into forms of package outlines for semiconductor device packages
• IEC 62007-2:1999 Semiconductor optoelectronic devices for fibre optic system applications - Part 2: Measuring methods
• IEC 60749-44:2016 Semiconductor devices - Mechanical and climatic test methods - Part 44: Neutron beam irradiated single event effect (SEE) test method for semiconductor devices
• IEC 60191-4:2002 Mechanical standardization of semiconductor devices - Part 4: Coding system and classification into forms of package outlines for semiconductor device packages
• IEC 60191-4:1987 Mechanical standardization of semiconductor devices. Part 4 : Coding system and classification into forms of package outlines for semiconductor devices
• IEC 60191-4:1999 Mechanical standardization of semiconductor devices - Part 4: Coding system and classification into forms of package outlines for semiconductor device packages
• IEC 60191-4:2013 Mechanical Standardization of Semiconductor Devices - Part 4: Coding system and classification into forms of package outlines for semiconductor device packages
• IEC 60191-4:2018 Mechanical Standardization of Semiconductor Devices - Part 4: Coding system and classification into forms of package outlines for semiconductor device packages
• IEC 62007-2/AMD1:1998 Semiconductor optoelectronic devices for fibre optic system applications - Part 2: Measuring methods; Amendment 1
• IEC 62007-2:2009 Semiconductor optoelectronic devices for fibre optic system applications - Part 2: Measuring methods
• IEC 60333:1993 Nuclear instrumentation; semiconductor charged-particle detectors; test procedures
• IEC 62047-9:2011 Semiconductor devices - Micro-electromechanical devices - Part 9: Wafer to wafer bonding strength measurement for MEMS
• IEC 62047-9:2011/COR1:2012 Semiconductor devices - Micro-electromechanical devices - Part 9: Wafer to wafer bonding strength measurement for MEMS
• IEC 60191-4/AMD1:2001 Mechanical standardization of semiconductor devices - Part 4: Coding system and classification into forms of package outlines for semiconductor device packages; Amendment 1
• IEC 60191-4/AMD2:2002 Mechanical standardization of semiconductor devices - Part 4: Coding system and classification into forms of package outlines for semiconductor device packages; Amendment 2
• IEC 60191-4:2013/AMD1:2018 Mechanical standardization of semiconductor devices - Part 4: Coding system and classification into forms of package outlines for semiconductor device packages; Amendment 1
• IEC 62951-9:2022 Semiconductor devices - Flexible and stretchable semiconductor devices - Part 9: Performance testing methods of one transistor and one resistor (1T1R) resistive memory cells
• IEC 60747-18-3:2019 Semiconductor devices - Part 18-3: Semiconductor bio sensors - Fluid flow characteristics of lens-free CMOS photonic array sensor package modules with fluidic system
• IEC 60146-5:1988 Semiconductor convertors; part 5: switches for uninterruptible power systems (UPS switches)
• IEC 60146-4:1986 Semiconductor convertors - Part 4: Method of specifying the performance and test requirements of uninterruptible power systems
• IEC 62830-5:2021 Semiconductor devices - Semiconductor devices for energy harvesting and generation - Part 5: Test method for measuring generated power from flexible thermoelectric devices
• IEC 62880-1:2017 Semiconductor devices - Stress migration test standard - Part 1: Copper stress migration test standard
• IEC 60749-39:2021 RLV Semiconductor devices - Mechanical and climatic test methods - Part 39: Measurement of moisture diffusivity and water solubility in organic materials used for semiconductor components
• IEC 60749-39:2021 Semiconductor devices - Mechanical and climatic test methods - Part 39: Measurement of moisture diffusivity and water solubility in organic materials used for semiconductor components
• IEC 60749-13:2018 Semiconductor devices - Mechanical and climatic test methods - Part 13: Salt atmosphere
• IEC 62007-1:1999 Semiconductor optoelectronic devices for fibre optic system applications - Part 1: Essential ratings and characteristics
• IEC 60596:1978 Definitions of test method terms for semiconductor radiation detectors and scintillation counting
• IEC 60749-34:2010 Semiconductor devices - Mechanical and climatic test methods - Part 34: Power cycling

American National Standards Institute （ANSI), Semiconductor Test System

• ANSI/EIA 370-B:1992 Semiconductor Devices, Designation System for
• ANSI/IEEE 300:1988 Test Procedures for Semiconductor Charged-Particle Detectors
• ANSI/ASTM D6095:2012 Test Method for Longitudinal Measurement of Volume Resistivity for Extruded Crosslinked and Thermoplastic Semiconducting Conductor and Insulation Shielding Materials
• ANSI/UL 2360-2004 Test Methods for Determining the Combustibility Characteristics of Plastics Used in Semi-Conductor Tool Construction

(U.S.) Joint Electron Device Engineering Council Soild State Technology Association, Semiconductor Test System

• JEDEC JESD370B-1982 Designation System for Semiconductor Devices
• JEDEC JEP140-2002 Beaded Thermocouple Temperature Measurement of Semiconductor Packages
• JEDEC JESD30D-2006 Descriptive Designation System for Semiconductor-device Packages
• JEDEC JESD30F-2013 Descriptive Designation System for Semiconductor-device Packages
• JEDEC JESD30G-2016 Descriptive Designation System for Semiconductor-device Packages
• JEDEC JESD22-B108A-2003 Coplanarity Test for Surface-Mount Semiconductor Devices
• JEDEC JESD22-B108B-2010 Coplanarity Test for Surface-Mount Semiconductor Devices
• JEDEC JESD390A-1981 Standard Test Procedure for Noise Margin Measurements for Semiconductor Logic Gating Microcircuits
• JEDEC JESD57-1996 Test Procedures for the Measurement of Single-Event Effects in Semiconductor Devices from Heavy Ion Irradiation

HU-MSZT, Semiconductor Test System

• MSZ 700/36.lap-1961
• MSZ 700/23.lap-1965
• MSZ 700/24.lap-1965
• MNOSZ 700-8.lap-1955
• MSZ 700/27.lap-1962
• MSZ 700/26.lap-1961
• MSZ 700/41.lap-1961
• MNOSZ 700-3.lap-1955

中华人民共和国国家质量监督检验检疫总局、中国国家标准化管理委员会, Semiconductor Test System

• GB/T 36005-2018 Measuring methods of optical radiation safety for semiconductor lighting equipments and systems
• GB/T 14028-2018 Semiconductor integrated circuits—Measuring method of analogue switch
• GB/T 35006-2018 Semiconductor integrated circuits—Measuring method of level converter
• GB/T 35007-2018 Semiconductor integrated circuits—Measuring method of low voltage differential signaling circuitry

CZ-CSN, Semiconductor Test System

• CSN 35 1540-1979 Tests of power semiconductor converters
• CSN IEC 749:1994 Semiconductor devices.Mechanical and climatic test methods
• CSN 35 8760-1973 Seraiconductors. Stabilizing diodes. Measurement of voltage temperature coefficient
• CSN 35 6575 Z1-1997 Standard test procedureds for semiconductor X-ray energy spectrometers
• CSN 35 1601-1980 Power semiconductor devices. General technical requirements. Testing methods
• CSN 35 8785-1975 Semiconductor devices. Varicaps. Measurement of thermal capacitance coefflcient.
• CSN IEC 596:1994 Definitions of test method terms for semiconductor radiation detectors and scintillation counting
• CSN 35 6553 Z1-1997

RO-ASRO, Semiconductor Test System

• STAS 11066/2-1980 THYRISTORS Test methods
• STAS 6693/2-1975 Semiconductor devices TRANSISTORS Methods for measuring electrical properties
• STAS CEI 191-4-1992 Mechanical standardization of semiconductor devices. Part 4: Coding system and classification into forms of package outlines for semiconductor devices

IN-BIS, Semiconductor Test System

• IS 7412-1974
• IS 9816-1981
• IS 12641-1989
• IS 12737-1988

Defense Logistics Agency, Semiconductor Test System

• DLA MIL-STD-750 F CHANGE 1-2013 TEST METHODS FOR SEMICONDUCTOR DEVICES
• DLA MIL-STD-750 F-2012 TEST METHOD STANDARD FOR SEMICONDUCTOR DEVICES
• DLA MIL STD 750 3-2012 TEST METHOD STANDARD TRANSISTOR ELECTRICAL TEST METHODS FOR SEMICONDUCTOR DEVICES PART 3: TEST METHODS 3000 THROUGH 3999
• DLA MIL STD 750 1-2012 TEST METHOD STANDARD ENVIRONMENTAL TEST METHODS FOR SEMICONDUCTOR DEVICES PART 1: TEST METHODS 1000 THROUGH 1999
• DLA MIL STD 750 2-2012 TEST METHOD STANDARD MECHANICAL TEST METHODS FOR SEMICONDUCTOR DEVICES PART 2: TEST METHODS 2001 THROUGH 2999
• DLA MIL STD 750 4 E-2012 TEST METHOD STANDARD DIODE ELECTRICAL TEST METHODS FOR SEMICONDUCTOR DEVICES PART 4: TEST METHODS 4000 THROUGH 4999
• DLA MIL-STD-750-1 CHANGE 1-2013 TEST METHOD STANDARD ENVIRONMENTAL TEST METHODS FOR SEMICONDUCTOR DEVICES PART 1: TEST METHODS 1000 THROUGH 1999
• DLA MIL-STD-750-2 CHANGE 3-2013 TEST METHOD STANDARD MECHANICAL TEST METHODS FOR SEMICONDUCTOR DEVICES PART 2: TEST METHODS 2001 THROUGH 2999
• DLA MIL-STD-750-1 CHANGE 2-2013 TEST METHOD STANDARD ENVIRONMENTAL TEST METHODS FOR SEMICONDUCTOR DEVICES PART 1: TEST METHODS 1000 THROUGH 1999
• DLA SMD-5962-93228 REV B-2005 MICROCIRCUIT, DIGITAL, CMOS, TEST BUS CONTROLLER, MONOLITHIC SILICON

Group Standards of the People's Republic of China, Semiconductor Test System

• T/SHDSGY 113-2022 Radio frequency front end semiconductor test software
• T/ZACA 041-2022 Mixed signal semiconductor device test equipment
• T/CASAS 011.1-2021 Test qualification for power devices in automotive applications
• T/CASAS 011.2-2021 Test qualification for power modules in automotive applications
• T/GVS 005-2022 Testing specification for contrast method of absolute pressure capacitance diaphragm vacuum gauge in the semiconductor equipment

YU-JUS, Semiconductor Test System

• JUS N.R1.500-1980 Semioonductor ?evices. Acceptance. Electrical tests

Institute of Electrical and Electronics Engineers (IEEE), Semiconductor Test System

• IEEE 660-1986 Semiconductor memory test pattern language
• IEEE No 256-1963 IEEE Test Procedure for Semiconductor Diodes
• IEEE Std 660-1986 IEEE Standard for Semiconductor Memory Test Pattern Language
• IEEE Std 300-1988 IEEE Standard Test Procedures for Semiconductor Charged-Particle Detectors
• ANSI/IEEE Std 300-1982 IEEE Standard Test Procedures for Semiconductor Charged-Particle Detectors
• ANSI/IEEE Std 759-1984 IEEE Standard Test Procedures for Semiconductor X-Ray Energy Spectrometers
• IEEE Std C62.35-1987 IEEE Standard Test Specifications for Avalanche Junction Semiconductor Surge Protective Devices
• IEEE No 300-1969*USAS N42.1-1969 USA Standard and IEEE Test Procedure for Semiconductor Radiation Detectors (For Ionizing Radiation)
• IEEE 300-1969 USA Standard and IEEE Test Procedure for Semiconductor Radiation Detectors (For Ionizing Radiation)
• IEEE Unapproved Draft Std PC62.35/D11, Aug 2007 IEEE Draft Standard Test Specifications for Avalanche Junction Semiconductor Surge-Protective Devices
• IEEE Std C62.35-2010 IEEE Standard Test Methods for Avalanche Junction Semiconductor Surge-Protective Device Components
• IEEE Std C62.35- 2010 IEEE Standard Test Methods for Avalanche Junction Semiconductor Surge-Protective Device Components

Professional Standard - Post and Telecommunication, Semiconductor Test System

• YD/T 2001.2-2011 Semiconductor optoelectronic devices for fibre optic system applications.part 2:measuring methods
• YD/T 701-1993 Test method for semiconductor laser diode assembly

Danish Standards Foundation, Semiconductor Test System

• DS/EN 62415:2010 Semiconductor devices - Constant current electromigration test
• DS/EN 62417:2010 Semiconductor devices - Mobile ion tests for metal-oxide semiconductor field effect transistors (MOSFETs)
• DS/EN 62416:2010 Semiconductor devices - Hot carrier test on MOS transistors
• DS/EN 62418:2010 Semiconductor devices - Metallization stress void test
• DS/EN 60749-38:2008 Semiconductor devices - Mechanical and climatic test methods - Part 38: Soft error test method for semiconductor devices with memory
• DS/EN 62007-2:2009 Semiconductor optoelectronic devices for fibre optic system applications - Part 2: Measuring methods
• DS/EN 60749-29:2011 Semiconductor devices - Mechanical and climatic test methods - Part 29: Latch-up test
• DS/EN 60191-6-16:2007 Mechanical standardization of semiconductor devices - Part 6-16: Glossary of semiconductor tests and burn-in sockets for BGA, LGA, FBGA and FLGA
• DS/EN 62047-11:2013 Semiconductor devices - Micro-electromechanical devices - Part 11: Test method for coefficients of linear thermal expansion of free-standing materials for micro-electromechanical systems
• DS/EN 60749-2:2003 Semiconductor Devices - Mechanical and climatic test methods - Part 2: Low air pressure
• DS/EN 60749-21:2011 Semiconductor devices - Mechanical and climatic test methods - Part 21: Solderability
• DS/EN 62373:2006 Bias-temperature stability test for metal-oxide, semiconductor, field-effect transistors (MOSFET)
• DS/EN 60749-34:2011 Semiconductor devices - Mechanical and climatic test methods - Part 34: Power cycling
• DS/EN 60749-25:2004 Semiconductor devices - Mechanical and climatic test methods - Part 25: Temperature cycling

CENELEC - European Committee for Electrotechnical Standardization, Semiconductor Test System

• EN 62415:2010 Semiconductor devices - Constant current electromigration test
• EN 62007-2:2000 Semiconductor Optoelectronic Devices for Fibre Optic System Applications Part 2: Measuring Methods
• EN 60191-4:2014 Mechanical standardization of semiconductor devices - Part 4: Coding system and classification into forms of package outlines for semiconductor device packages (Incorporates Amendment A1: 2018)
• EN 60749-29:2003 Semiconductor devices Mechanical and climatic test methods Part 29: Latch-up test
• EN 60749-34:2004 Semiconductor devices Mechanical and climatic test methods Part 34: Power Cycling

Korean Agency for Technology and Standards (KATS), Semiconductor Test System

• KS C 6045-1991(2001) TESTING METHODS FOR SEMICONDUCTOR RECTIFIER DIODES
• KS M 1804-2008(2018) Test method of hydrofluoric acid for semi-conductor
• KS C 6045-1986 TESTING METHODS FOR SEMICONDUCTOR RECTIFIER DIODES
• KS C IEC 62007-2:2003 Semiconductor optoelectronic devices for fibre optic system applications － Part 2：Measuring methods
• KS C 6565-2002 Test methods of semiconductor acceleration sensors
• KS C 6565-2002(2017) Test methods of semiconductor acceleration sensors
• KS C IEC 62007-2-2003(2018)
• KS C 6520-2008 Components and materials of semiconductor process－Measurement of wear characteristics by plasma
• KS C IEC 60759-2009(2019) Standard test procedures for semiconductor X-ray energy spectrometers
• KS C IEC 62526-2015(2020) Standard for Extensions to Standard Test Interface Language (STIL) for Semiconductor Design Environments
• KS C IEC 60749-39-2006(2021) Semiconductor devices－Mechanical and climatic test methods－Part 39：Measurement of moisture diffusivity and water solubility in organic materials used for semiconductor components
• KS C IEC 60749-39-2006(2016) Semiconductor devices－Mechanical and climatic test methods－Part 39：Measurement of moisture diffusivity and water solubility in organic materials used for semiconductor components
• KS C IEC 62526:2015 Standard for Extensions to Standard Test Interface Language (STIL) for Semiconductor Design Environments
• KS C IEC 60749-21:2020 Semiconductor devices — Mechanical and climatic test methods — Part 21: Solderability
• KS C IEC 60749-2:2020 Semiconductor devices — Mechanical and climatic test methods — Part 2: Low air pressure
• KS C IEC 60749-13:2020 Semiconductor devices — Mechanical and climatic test methods — Part 13: Salt atmosphere
• KS C IEC 61954:2002 Power electronics for electrical transmission and distribution systems-Testing of thyristor valves for static VAR Compensators
• KS C IEC 62007-1:2003 Semiconduct optoelectronic devices for fibre optic system applications ? Part 1：Essential ratings and characteristics
• KS C IEC 60749-34:2006 Semiconductor devices-Mechanical and climatic test methods-Part 34:Power cycling
• KS C IEC 60749-6:2020 Semiconductor devices — Mechanical and climatic test methods — Part 6: Storage at high temperature
• KS C IEC 60749-22:2020 Semiconductor devices — Mechanical and climatic test methods — Part 22: Bond strength
• KS C IEC 60749-34:2017 Semiconductor devices－Mechanical and climatic test methods－Part 34：Power cycling
• KS C IEC 60749-39:2006 Semiconductor devices－Mechanical and climatic test methods－Part 39：Measurement of moisture diffusivity and water solubility in organic materials used for semiconductor components

German Institute for Standardization, Semiconductor Test System

• DIN EN 62415:2010-12 Semiconductor devices - Constant current electromigration test (IEC 62415:2010); German version EN 62415:2010
• DIN EN 62417:2010-12 Semiconductor devices - Mobile ion tests for metal-oxide semiconductor field effect transistors (MOSFETs) (IEC 62417:2010); German version EN 62417:2010
• DIN EN 62416:2010-12 Semiconductor devices - Hot carrier test on MOS transistors (IEC 62416:2010); German version EN 62416:2010
• DIN 50448:1998 Testing of materials for semiconductor technology - Contactless determination of the electrical resistivity of semi-insulating semi-conductor slices using a capacitive probe
• DIN EN 62418:2010-12 Semiconductor devices - Metallization stress void test (IEC 62418:2010); German version EN 62418:2010
• DIN EN 60191-4:2003 Mechanical standardization of semiconductor devices - Part 4: Coding system and classification into forms of package outlines for semiconductor device packages (IEC 60191-4:1999 + A1:2001 + A2:2002); German version EN 60191-4:1999 + A1:2002 + A2:2002
• DIN 50441-2:1998 Testing of materials for semiconductor technology - Determination of the geometric dimensions of semiconductor wafers - Part 2: Testing of edge profile
• DIN 50441-1:1996 Testing of materials for semiconductor technology - Determination of the geometric dimensions of semiconductor wafers - Part 1: Thickness and thickness variation
• DIN 50441-5:2001 Testing of materials for semiconductor technology - Determination of the geometric dimensions of semiconductor wafers - Part 5: Terms of shape and flatness deviation
• DIN EN 60749-44:2017-04 Semiconductor devices - Mechanical and climatic test methods - Part 44: Neutron beam irradiated single event effect (SEE) test method for semiconductor devices (IEC 60749-44:2016); German version EN 60749-44:2016
• DIN EN 62007-2:2009-09 Semiconductor optoelectronic devices for fibre optic system applications - Part 2: Measuring methods (IEC 62007-2:2009); German version EN 62007-2:2009 / Note: DIN EN 62007-2 (2001-06) remains valid alongside this standard until 2012-02-01.
• DIN EN 60749-38:2008-10 Semiconductor devices - Mechanical and climatic test methods - Part 38: Soft error test method for semiconductor devices with memory (IEC 60749-38:2008); German version EN 60749-38:2008
• DIN SPEC 1994:2017-02 Testing of materials for semiconductor technology - Determination of anions in weak acids
• DIN EN 60749-29:2012-01 Semiconductor devices - Mechanical and climatic test methods - Part 29: Latch-up test (IEC 60749-29:2011); German version EN 60749-29:2011 / Note: DIN EN 60749-29 (2004-07) remains valid alongside this standard until 2014-05-12.
• DIN EN 60191-6-16:2007-11 Mechanical standardization of semiconductor devices - Part 6-16: Glossary of semiconductor tests and burn-in sockets for BGA, LGA, FBGA and FLGA (IEC 60191-6-16:2007); German version EN 60191-6-16:2007 / Note: To be replaced by DIN EN 60191-6-16 (2013-...
• DIN EN IEC 63364-1:2023-10 Semiconductor devices - Semiconductor devices for IOT system - Part 1: Test method of sound variation detection (IEC 47/2742/CDV:2021); German and English version prEN IEC 63364-1:2021 / Note: Date of issue 2023-09-29
• DIN 50449-2:1998 Testing of materials for semiconductor technology - Determination of impurity content in semiconductors by infrared absorption - Part 2: Boron in gallium arsenide
• DIN EN 62047-11:2014-04 Semiconductor devices - Micro-electromechanical devices - Part 11: Test method for coefficients of linear thermal expansion of free-standing materials for micro-electromechanical systems (IEC 62047-11:2013); German version EN 62047-11:2013
• DIN EN 60749-39:2007-01 Semiconductor devices - Mechanical and climatic test methods - Part 39: Measurement of moisture diffusivity and water solubility in organic materials used for semiconductor components (IEC 60749-39:2006); German version EN 60749-39:2006 / Note: To be r...
• DIN EN 60749-8:2003-12 Semiconductor devices - Mechanical and climatic test methods - Part 8: Sealing (IEC 60749-8:2002 + Corr. 1:2003 + Corr. 2:2003); German version EN 60749-8:2003 / Note: Under certain conditions, DIN EN 60749 (2002-09) remains valid alongside this standa...
• DIN EN 60191-4:2019-02 Mechanical standardization of semiconductor devices - Part 4: Coding system and classification into forms of package outlines for semiconductor device packages (IEC 60191-4:2013 + A1:2018); German version EN 60191-4:2014 + A1:2018 / Note: DIN EN 60191-...
• DIN EN IEC 60749-13:2018-10 Semiconductor devices - Mechanical and climatic test methods - Part 13: Salt atmosphere (IEC 60749-13:2018); German version EN IEC 60749-13:2018 / Note: DIN EN 60749-13 (2003-04) remains valid alongside this standard until 2021-03-22.
• DIN EN 60749-21:2012-01 Semiconductor devices - Mechanical and climatic test methods - Part 21: Solderability (IEC 60749-21:2011); German version EN 60749-21:2011 / Note: DIN EN 60749-21 (2005-06) remains valid alongside this standard until 2014-05-12.
• DIN EN 62373:2007-01 Bias-temperature stability test for metal-oxide, semiconductor, field-effect transistors (MOSFET) (IEC 62373:2006); German version EN 62373:2006
• DIN 50452-1:1995-11 Testing of materials for semiconductor technology - Test method for particle analysis in liquids - Part 1: Microscopic determination of particles
• DIN EN 60191-4:2014 Mechanical standardization of semiconductor devices - Part 4: Coding system and classification into forms of package outlines for semiconductor device packages (IEC 60191-4:2013); German version EN 60191-4:2014
• DIN EN 60749-22:2003-12 Semiconductor devices - Mechanical and climatic test methods - Part 22: Bond strength (IEC 60749-22:200 + Corr. 1:2003); German version EN 60749-22:2003 / Note: Under certain conditions, DIN EN 60749 (2002-09) remains valid alongside this standard unti...
• DIN EN IEC 60749-12:2018-07 Semiconductor devices - Mechanical and climatic test methods - Part 12: Vibration, variable frequency (IEC 60749-12:2017); German version EN IEC 60749-12:2018 / Note: DIN EN 60749-12 (2003-04) remains valid alongside this standard until 2021-01-17.
• DIN EN 60749-25:2004-04 Semiconductor devices - Mechanical and climatic test methods - Part 25: Temperature cycling (IEC 60749-25:2003); German version EN 60749-25:2003 / Note: Under certain conditions, DIN EN 60749 (2002-09) remains valid alongside this standard until 2006-0...
• DIN EN 60749-27:2013-04 Semiconductor devices - Mechanical and climatic test methods - Part 27: Electrostatic discharge (ESD) sensitivity testing - Machine model (MM) (IEC 60749-27:2006 + A1:2012); German version EN 60749-27:2006 + A1:2012 / Note: DIN EN 60749-27 (2007-01) re...
• DIN EN 60749-6:2017-11 Semiconductor devices - Mechanical and climatic test methods - Part 6: Storage at high temperature (IEC 60749-6:2017); German version EN 60749-6:2017 / Note: DIN EN 60749-6 (2003-04) remains valid alongside this standard until 2020-04-07.
• DIN EN 60749-34:2011-05 Semiconductor devices - Mechanical and climatic test methods - Part 34: Power cycling (IEC 60749-34:2010); German version EN 60749-34:2010 / Note: DIN EN 60749-34 (2004-10) remains valid alongside this standard until 2013-12-01.
• DIN EN 60749-39:2007 Semiconductor devices - Mechanical and climatic test methods - Part 39: Measurement of moisture diffusivity and water solubility in organic materials used for semiconductor components (IEC 60749-39:2006); German version EN 60749-39:2006

工业和信息化部, Semiconductor Test System

• SJ/T 2749-2016 Semiconductor Laser Diode Test Methods
• SJ/T 10805-2018 Semiconductor integrated circuit voltage comparator test method
• SJ/T 11702-2018 Semiconductor integrated circuit serial peripheral interface test method
• SJ/T 11706-2018 Semiconductor integrated circuit field programmable gate array testing method
• SJ/T 11577-2016 SJ/T 11394-2009 "Semiconductor Light Emitting Diode Test Methods" Application Guide

国家市场监督管理总局、中国国家标准化管理委员会, Semiconductor Test System

• GB/T 1550-2018 Test methods for conductivity type of extrinsic semiconducting materials
• GB/T 39771.2-2021 Optical radiation safety of LEDs—Part 2: Measurement methods

Professional Standard - Aerospace, Semiconductor Test System

• QJ 259-1977 器件
• QJ 257-1977 Semiconductor TTL Integrated Digital Circuit Testing Method
• QJ 1528-1988 Semiconductor integrated circuit time base test method
• QJ/Z 32-1977 Testing methods for semi-conductor integrated comparison amplifiers
• QJ 260-1977 器件
• QJ 1460-1988 Test method for broadband amplifier of semiconductor integrated circuit
• QJ 2491-1993 Test methods for operational amplifiers in semiconductor integrated circuits
• QJ 1526-1988 器件
• QJ 2660-1994 Test method for pulse width modulator of semiconductor integrated circuit switching power supply
• QJ 3289-2007 Requirements and methods of hardware-in-the-loop simulation test for radio frequency homing guidance control system of surface-to-air missile
• QJ 3044-1998 Semiconductor integrated circuit D/A converter and A/D converter test method

European Committee for Electrotechnical Standardization（CENELEC）, Semiconductor Test System

• EN 62007-2:2009 Semiconductor optoelectronic devices for fibre optic system applications - Part 2: Measuring methods
• EN 62418:2010 Semiconductor devices - Metallization stress void test
• EN 60749-44:2016 Semiconductor devices - Mechanical and climatic test methods - Part 44: Neutron beam irradiated single event effect (SEE) test method for semiconductor devices
• EN 60749-29:2011 Semiconductor devices - Mechanical and climatic test methods - Part 29: Latch-up test
• EN 62047-9:2011 Semiconductor devices - Micro-electromechanical devices - Part 9: Wafer to wafer bonding strength measurement for MEMS
• EN 62047-11:2013 Semiconductor devices - Micro-electromechanical devices - Part 11: Test method for coefficients of linear thermal expansion of free-standing materials for micro-electromechanical systems
• EN 60749-39:2006 Semiconductor devices - Mechanical and climatic test methods Part 39: Measurement of moisture diffusivity and water solubility in organic materials used for semiconductor components
• EN 62047-10:2011 Semiconductor devices - Micro-electromechanical devices - Part 10: Micro-pillar compression test for MEMS materials
• EN 60749-34:2010 Semiconductor devices - Mechanical and climatic test methods - Part 34: Power cycling

TR-TSE, Semiconductor Test System

• TS 2643-1977 Test Procedures For Bemiconductor Detectors For Ionizing Radiation

Lithuanian Standards Office , Semiconductor Test System

• LST EN 62417-2010 Semiconductor devices - Mobile ion tests for metal-oxide semiconductor field effect transistors (MOSFETs) (IEC 62417:2010)
• LST EN 62415-2010 Semiconductor devices - Constant current electromigration test (IEC 62415:2010)
• LST EN 62416-2010 Semiconductor devices - Hot carrier test on MOS transistors (IEC 62416:2010)
• LST EN 60749-38-2008 Semiconductor devices - Mechanical and climatic test methods - Part 38: Soft error test method for semiconductor devices with memory (IEC 60749-38:2008)
• LST EN 62418-2010 Semiconductor devices - Metallization stress void test (IEC 62418:2010)
• LST EN 60191-4-2014 Mechanical standardization of semiconductor devices - Part 4: Coding system and classification into forms of package outlines for semiconductor device packages (IEC 60191-4:2013)
• LST EN 62007-2-2009 Semiconductor optoelectronic devices for fibre optic system applications - Part 2: Measuring methods (IEC 62007-2:2009)
• LST EN 60749-29-2011 Semiconductor devices - Mechanical and climatic test methods -- Part 29: Latch-up test (IEC 60749-29:2011)
• LST EN 60191-6-16-2007 Mechanical standardization of semiconductor devices - Part 6-16: Glossary of semiconductor tests and burn-in sockets for BGA, LGA, FBGA and FLGA (IEC 60191-6-16:2007)

NEMA - National Electrical Manufacturers Association, Semiconductor Test System

• NEMA ABP 3-2013 Molded Case Circuit Breaker Systems Testing with Conductors

SE-SIS, Semiconductor Test System

• SIS SS-IEC 749:1991 Semiconductor devices - Mechanical and climatic test methods
• SIS SS IEC 333:1986 Nuclear instrumentation - Testprocedures for semiconductor chargedparticle detectors
• SIS SS IEC 700:1984 Power electronics — Semiconductor valves for high-voltage d.c. power transmission — Testing

RU-GOST R, Semiconductor Test System

• GOST 24461-1980 Power semiconductor devices. Test and measurement methods
• GOST 4.139-1985 System of product-quality indices. Semiconductor power converters. Nomenclature of indices
• GOST 18986.17-1973 Reference diodes. Method of measuring of temperature coefficient of working voltage
• GOST 25293-1982 Coolers of air-cooling system of power semiconducting devices. General specifications
• GOST 19656.6-1974 Semiconductor UHF mixer diodes. Measurement methods of standard overall noise figure
• GOST R 8.842-2013 State system for ensuring the uniformity of measurement. Insruments for measurement of radiant power semiconductor emitter diode. Verification procedure
• GOST R 8.843-2013 State system for ensuring the uniformity of measurement. Insruments of measurement of radiant power semiconductor emitter diode. Verification procedure

ECIA - Electronic Components Industry Association, Semiconductor Test System

• EIA CB-5:1969 Recommended Test Procedure for Semiconductor Thermal Dissipating Devices

Japanese Industrial Standards Committee (JISC), Semiconductor Test System

• JIS C 7012:1982 Type designation system for discrete semiconductor devices

Electronic Components, Assemblies and Materials Association, Semiconductor Test System

• ECA CB 5-1969 Recommended Test Procedure for Semiconductor Thermal Dissipating Devices
• ECA CB 5-1-1971 Recommended Test Procedure for Semiconductor Thermal Dissipating Devices Addendum to CB5

Guizhou Provincial Standard of the People's Republic of China, Semiconductor Test System

• DB52/T 1104-2016 Transient test method for junction-case thermal resistance of semiconductor devices

IEEE - The Institute of Electrical and Electronics Engineers@ Inc., Semiconductor Test System

• IEEE 425-1957 TEST CODE for TRANSISTORS SEMICONDUCTOR DEFINITIONS and LEITER SYMBOLS
• IEEE 300-1988 Standard Test Procedures for Semiconductor Charged-Particle Detectors
• IEEE 300-1982 STANDARD TEST PROCEDURES FOR SEMICONDUCTOR CHARGED-PARTICLE DETECTORS
• IEEE C62.35-1987 Standard Test Specifications for Avalanche Junction Semiconductor Surge-Protective Devices
• IEEE PC62.35/D1-2018 Draft Standard for Test Methods for Silicon Avalanche Semiconductor Surge Protective Device Components
• IEEE C62.35-2010 Standard Test Methods for Avalanche Junction Semiconductor Surge-Protective Device Components

CH-SNV, Semiconductor Test System

• VSM 18656-1964

National Metrological Verification Regulations of the People's Republic of China, Semiconductor Test System

• JJG(电子) 04008-1987 Trial Verification Regulations for QE1A Double-base Semiconductor Tube Tester
• JJG(电子) 310002-2006 Specification for verification of DC parameter testers for semiconductor discrete devices
• JJG(电子) 310003-2006 Specification for verification of capacitor parameter testers for semiconductor discrete devices
• JJG(电子) 04023-1989 Specification for verification of BJ2970 model high power semiconductor triode tf tester

Professional Standard - Machinery, Semiconductor Test System

• JB/T 6307.1-1992 Test method for power semiconductor module Rectifier diode pair of arms
• JB/T 6307.2-1992 Test method for power semiconductor module Single-phase bridge rectifier diodes
• JB/T 6307.3-1992 Test method for power semiconductor module Triphase bridge rectifier diode
• JB/T 4219-1999 Type designation of measuring equipments for power semiconductor devices
• JB/T 6307.4-1992 Test method for power semiconductor module Arm and pair of arms of bipolar transistor
• JB/T 6307.5-1994 Power Semiconductor Module Test Methods Bipolar Transistors Single-Phase Bridge and Three-Phase Bridge

Military Standard of the People's Republic of China-General Armament Department, Semiconductor Test System

• GJB 9147-2017 Semiconductor integrated circuit operational amplifier test methods
• GJB 3219-1998 Air-to-air missile system overall performance test method
• GJB 5410-2005 Test and launching rules for terminal guidance system of strategic missile

American Society for Testing and Materials (ASTM), Semiconductor Test System

• ASTM E1161-95 Standard Test Method for Radiologic Examination of Semiconductors and Electronic Components
• ASTM F76-86(1996)e1 Standard Test Methods for Measuring Resistivity and Hall Coefficient and Determining Hall Mobility in Single-Crystal Semiconductors
• ASTM F76-86(2002) Standard Test Methods for Measuring Resistivity and Hall Coefficient and Determining Hall Mobility in Single-Crystal Semiconductors
• ASTM F76-08 Standard Test Methods for Measuring Resistivity and Hall Coefficient and Determining Hall Mobility in Single-Crystal Semiconductors
• ASTM F76-08(2016)e1 Standard Test Methods for Measuring Resistivity and Hall Coefficient and Determining Hall Mobility in Single-Crystal Semiconductors
• ASTM D4325-20 Standard Test Methods for Nonmetallic Semi-Conducting and Electrically Insulating Rubber Tapes
• ASTM F76-08(2016) Standard Test Methods for Measuring Resistivity and Hall Coefficient and Determining Hall Mobility in Single-Crystal Semiconductors

Taiwan Provincial Standard of the People's Republic of China, Semiconductor Test System

• CNS 6802-1980 Standard Test Procedured for Noise Margin Measurements for Semiconductor Logic Gating Microcircuits
• CNS 8104-1981 Method for Measuring MOSFET Linear Threshold Voltage
• CNS 8106-1981 Method for Measuring MOSFET Saturated Threshold Voltage
• CNS 5751-1980 Method of Test for Apparent Density of Ceramics for Electron Device and Semiconductor Application

ASHRAE - American Society of Heating@ Refrigerating and Air-Conditioning Engineers@ Inc., Semiconductor Test System

• ASHRAE 4513-2002 Application of 3C Duct Design Method in Semiconductor Factory Process Exhaust Systems

National Metrological Technical Specifications of the People's Republic of China, Semiconductor Test System

• JJF 1895-2021 Calibration Specification for Semiconductor Devices DC and Low Frequency Parameters Test Equipments

未注明发布机构, Semiconductor Test System

• BS IEC 62526:2007(2010) Standard for Extensions to Standard Test Interface Language (STIL) for Semiconductor Design Environments

Anhui Provincial Standard of the People's Republic of China, Semiconductor Test System

• DB34/T 3770-2020 Test method for electrical testing of composite insulators for use in superconducting magnet systems

BELST, Semiconductor Test System

• STB 8066-2016 System for ensuring uniformity of measurements of the Republic of Belarus. Alpha spectrometers with semiconductor detectors. Methods of verification

ZA-SANS, Semiconductor Test System

• SANS 6281-1:2007 Test methods for impregnated paper-insulated electric cables Part 1: Tests on insulating and semi-conducting paper

AENOR, Semiconductor Test System

• UNE-EN 60749-2:2003 Semiconductor devices - Mechanical and climatic test methods -- Part 2: Low air pressure.
• UNE-EN 60749-12:2003 Semiconductor devices - Mechanical and climatic test methods -- Part 12: Vibration, variable frequency.
• UNE-EN 60749-10:2003 Semiconductor devices - Mechanical and climatic test methods -- Part 10: Mechanical shock.

KR-KS, Semiconductor Test System

• KS C IEC 60749-2-2020 Semiconductor devices — Mechanical and climatic test methods — Part 2: Low air pressure
• KS C IEC 60749-21-2020 Semiconductor devices — Mechanical and climatic test methods — Part 21: Solderability
• KS C IEC 60749-13-2020 Semiconductor devices — Mechanical and climatic test methods — Part 13: Salt atmosphere
• KS C IEC 60749-22-2020 Semiconductor devices — Mechanical and climatic test methods — Part 22: Bond strength
• KS C IEC 60749-6-2020 Semiconductor devices — Mechanical and climatic test methods — Part 6: Storage at high temperature

SAE - SAE International, Semiconductor Test System

• SAE ARP1625-1981 Cold Gas Systems@ Missile or Projectiles Design@ Installation@ Tests and Requirements for

Society of Automotive Engineers (SAE), Semiconductor Test System

• SAE ARP1625-1994 COLD GAS SYSTEMS, MISSILE OR PROJECTILES DESIGN, INSTALLATION, TESTS AND REQUIREMENTS FOR
• SAE ARP1625A-2002 Cold Gas Systems, Missile or Projectiles Design, Installation, Tests and Requirements For

Professional Standard - Energy, Semiconductor Test System

• NB/T 25110-2020 Technical guidelines for commissioning of combustible gas monitoring and control systems in nuclear power plants

International Organization for Standardization (ISO), Semiconductor Test System

• ISO 18257:2016 Space systems - Semiconductor integrated circuits for space applications - Design requirements

Professional Standard - Forestry, Semiconductor Test System

• LY/T 1688-2007 Indicators system for long-term observation of forest ecosystem in arid and semi-arid zone

CU-NC, Semiconductor Test System

• NC 90-13-36-1986 Metrological Assurance Conductometers. Testing Methods

European Committee for Standardization (CEN), Semiconductor Test System

• HD 396 S1-1979 Definitions of test method terms for semiconductor radiation detectors and scintillation counting

Underwriters Laboratories (UL), Semiconductor Test System

• UL 2360-2000 Test Methods for Determining the Combustibility Characteristics of Plastics Used in Semi-Conductor Tool Construction

Hebei Provincial Standard of the People's Republic of China, Semiconductor Test System

• DB13/T 5120-2019 Specifications for DC performance test of FP and DFB semiconductor laser chips for optical communication

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