29.045 半导体材料 标准查询与下载

ANSI/ASTM D3004:2008 压塑交联和热塑性半导体导管和绝缘防护材料用规范

Specification for Extruded Crosslinked and Thermoplastic Semi-conducting, Conductor and Insulation Shielding Materials

YS/T 651-2007 二氧化硒

本标准规定了二氧化硒的要求、试验方法、检验规则及标志、包装、运输和贮存。 本标准适用于采用燃烧法所生产的二氧化硒。适用于电解金属锰添加剂、精细化工合成各种硒酸盐、饲料添加剂、有机合成氧化剂、催化剂、电镀表面处理剂、化学试剂等领域用二氧化硒。

Selenium dioxide

ASTM F2113-01(2007) 电子薄膜用高纯金属溅射靶材纯度等级及杂质含量分析和报告标准指南

Standard Guide for Analysis and Reporting the Impurity Content and Grade of High Purity Metallic Sputtering Targets for Electronic Thin Film Applications

DIN 50451-4:2007 半导体工艺用材料测试.液体中痕量元素测定.用电感耦合等离子体质谱测定法测定纯净水中34中微量元素

This Standard specifies a test method for the determination of 34 elements in ultra pure water by mass spectrometry with inductively coupled plasma (ICP-MS). The method is applicable to mass fractions of elements from 10 ng/kg to 1000 ng/kg.

Testing of materials for semiconductor technology - Determination of trace elements in liquids - Part 4: Determination of 34 elements in ultra pure water by mass spectrometry with inductively coupled plasma (ICP-MS)

ARMY MIL-PRF-44494 A-2006 空间电热器 -液体和固体燃料非驱动辐射型

This specification covers the performance and acceptance requirements for two non-powered, liquid and solid fuel burning, radiant space heaters, and accessories.

HEATER, SPACE - RADIANT, NON-POWERED, LIQUID& SOLID FUEL

ASTM D6095-05 挤压交联和热塑性半导体导体和绝缘屏蔽材料的体积电阻率的标准试验方法

1.1 This test method covers the procedure for determining the volume resistivity, measured longitudinally, of extruded crosslinked and thermoplastic semiconducting, conductor and insulation shields for wire and cable.1.2 Whenever two sets of values are presented, in different units, the values in the first set are the standard, while those in parentheses are for information only.This standard does not purport to address all of the safety concerns, if any, associated with its use. It is the responsibility of the user of this standard to establish appropriate safety and health practices and determine the applicability of regulatory limitations prior to use. For a specific hazard statement, see .1.3 In common practice the conductor shield is often referred to as the strand shield.1.4 While technically the volume resistivity in this test method is a longitudinal measurement of volume resistivity, in the wire and cable industry the word longitudinal is not used. This longitudinal measurement of volume resistivity will be referred to as "volume resistivity" throughout this standard.

Standard Test Method for Volume Resistivity for Extruded Crosslinked and Thermoplastic Semiconducting Conductor and Insulation Shielding Materials

ARMY MIL-PRF-32046-2003 野地放牧辐射供暖机组

This specification covers a ration unit used for heating unitized group rations.

RATION HEATING UNIT, FIELD FEEDING

DIN 50451-1:2003 半导体工艺材料检验.液体中痕量元素测定.用原子吸收光谱测定法测定硝酸溶剂中银、金、钙、铜、铁、钾和钠的含量

The document specifies a method for testing nitric acid for the relevant metal traces of silver, gold, copper, iron, potassium and sodium in trace quantities, for which the method of atomic absorption spectroscopy (AAS) with electrothermic atomizing is used. The range of application covers trace element mass fractions from 0,1 ng/g to 50 ng/g.

Testing of materials for semiconductor technology - Determination of trace elements in liquids - Part 1: Silver (Ag), gold (Au), calcium (Ca), copper (Cu), iron (Fe), potassium (K) and sodium (Na) in nitric acid by AAS

DIN 50451-3:2003 半导体工艺用材料测试.液体中痕量元素测定.第3部分:用电感耦合等离子体质谱法测定硝酸中铝(AL)、钴(Co)、铜(Cu)、钠(Na)、镍(Ni)和锌(Zn)的含量

Testing of materials for semiconductor technology - Determination of traces of elements in liquids - Part 3: Aluminium (Al), cobalt (Co), copper (Cu), sodium (Na), nickel (Ni) and zinc (Zn) in nitric acid by ICP-MS

KS L 1619-2003 电传导陶器薄膜电阻率测定方法.4点探针法

이 규격은 전도성 세라믹 박막의 비저항을 4탐침법에 의해 시험하는 방법에 관하여 정의한

Test methods for measuring resistivity of electrically conductive ceramic thin films with four point probe method

KS L 1620-2003 电传导陶器薄膜电阻测定方法.范得堡法

이 규격은 전도성 세라믹 박막의 비저항을 반데르포우(Van der Pauw)법에 의해

Test methods for measuring resistivity of electrically conductive ceramic thin films with Van der Pauw method

KS D 0262-2002(2017) 切片和重叠的硅片的目视检查

Visual inspection for sliced and lapped silicon wafers

KS D 0262-2002 硅切割片和研磨片的外观检验

이 규격은 실리콘 웨이퍼에서 보이는 다양한 특징과 오염 물질의 겉모양 검사 및 한쪽면으로

Visual inspection for sliced and lapped silicon wafers

KS D 0257-2002(2022) 光电导衰减法测量硅单晶中的少数载流子寿命

Measuring of minority - carrier lifetime in silicon single crystal by photoconductive decay method

KS D 0262-2002(2022) 切片和搭接硅片的目视检查

Visual inspection for sliced and lapped silicon wafers

KS D 0257-2002 光电导衰减测量法测定硅单晶体少数载流子寿命的方法

이 규격은 실리콘 단결정 중의 소수 캐리어의 벌크 재결합 수명(이하 벌크 수명 또는 tB라

Measuring of minority - carrier lifetime in silicon single crystal by photoconductive decay method

KS D 0257-2002(2017) 载流子寿命单晶硅BY光电导衰减法 - 少数民族MEASURING

Measuring of minority - carrier lifetime in silicon single crystal by photoconductive decay method

ASTM D3004-97 挤压交联和热塑性半导体导体和绝缘屏蔽材料的标准规范

1.1 This specification covers extruded crosslinked and thermoplastic semi-conducting, conductor and insulation shielding materials for electrical wires and cables.1.2 The materials covered are not compatible with hydrocarbon derivatives of a swelling or deteriorating nature.1.3 Whenever two sets of values are presented, in different units, the values in the first set are the standard, while those in parentheses are for information only.1.4 In many instances, the electrical properties of the shielding material are strongly dependent on processing conditions. For this reason, in this specification the material is sampled from cable. Therefore, tests are done on shielded wire in this standard solely to determine the relevant property of the shielding material and not to test the conductor or completed cable.

Standard Specification for Extruded Crosslinked and Thermoplastic Semi-Conducting, Conductor and Insulation Shielding Materials

ASTM F951-96 硅片中径向间隙氧变化测定的标准试验方法

1.1 This test method covers test site selection and data reduction procedures for radial variation of the interstitial oxygen concentration in silicon slices typically used in the manufacture of microelectronic semiconductor devices.1.2 This test method is intended as both a referee and production test through selection of an appropriate test position plan.1.3 The interstitial oxygen content may be measured in accordance with Test Methods F 1188 or F 1619, DIN 50438/1, JEIDA 61, or any other procedure agreed upon by the parties to the test. Note 18212;Test Method F 1366 is not based on infrared absorption measurement and it measures total oxygen content, not interstitial oxygen content. It is also a destructive technique. However, it can be used to determine the radial variation of the oxygen content if suitable modifications of the test procedure are made.1.4 Acceptable thickness and surface finish for the test specimens are specified in the applicable test methods. This test method is suitable for use on chemically etched, single-side polished and double-side polished silicon wafers or slices with no surface defects that could adversely change infrared radiation transmission through the test specimen (subsequently called slice), provided that appropriate test methods for oxygen content are selected.1.5 This standard does not purport to address all of the safety concerns, if any, associated with its use. It is the responsibility of the user of this standard to establish appropriate safety and health practices and determine the applicability of regulatory limitations prior to use.

Standard Test Method for Determination of Radial Interstitial Oxygen Variation in Silicon Wafers

ASTM F928-93(1999) 圆形半导体晶圆和刚性圆盘基底边缘轮廓的标准试验方法

1.1 These test methods2 provide means for examining the edge contour of circular wafers of silicon, gallium arsenide, and other electronic materials, and determining fit to limits of contour specified by a template that defines a permitted zone through which the contour must pass. Principal application of such a template is intended for, but not limited to, wafers that have been deliberately edge shaped. 1.2 Two test methods are described. One is destructive and is limited to inspection of discrete points on the periphery, including flats. The contour of deliberately edge-shaped wafers may not be uniform around the entire periphery, and thus the discrete location(s) may or may not be representative of the entire periphery. The other test method is nondestructive and suitable for inspection of all points on the wafers periphery except flats. 1.3 The nondestructive test method may also be applied to the examination of the edge contour of the outer periphery of substrates for rigid disks used for magnetic storage of data. NOTE 1—Reference to wafers in the remainder of this standard shall be interpreted to include substrates for rigid disks unless the phrase “of electronic materials” is also included in the context. 1.4 The values stated in SI units are to be regarded as the standard. The values given in parentheses are for information only. 1.5 This standard does not purport to address all of the safety concerns, if any, associated with its use. It is the responsibility of the user of this standard to establish appropriate safety and health practices and determine the applicability of regulatory limitations prior to use.

Standard Test Methods for Edge Contour of Circular Semiconductor Wafers and Rigid Disk Substrates