29.045 半导体材料 标准查询与下载

ASTM F534-97 硅片弯曲度的标准试验方法

1.1 This test method covers determination of the average amount of bow of nominally circular silicon wafers, polished or unpolished, in the free (non-clamped) condition. 1.2 This test method is intended primarily for use with wafers that meet the dimension and tolerance requirements of SEMI Specifications M1. 1.3 This test method can also be applied to circular wafers of other semiconducting materials, such as gallium arsenide, or electronic substrate materials, such as sapphire or gadolinium gallium garnet, that have a diameter of 25 mm or greater, a thickness of 0.18 mm or greater, and a ratio of diameter to thickness up to 250. Wafers to be tested may have one or more fiducial flats provided they are located in such a way that the slice can be centered on the support pedestals (see 7.1.2) without falling off. 1.4 The values stated in inch-pound units are to be regarded as the standard. The values given in parentheses are for information only. 1.5 This standard does not purport to address all of the safety concerns, if any, associated with its use. It is the responsibility of the user of this standard to establish appropriate safety and health practices and determine the applicability of regulatory limitations prior to use.

Standard Test Method for Bow of Silicon Wafers

ARMY MIL-PRF-32111-2002 空间加热器-液体和固体燃料非驱动辐射大型

This specification covers the performance and acceptance requirements for two nonpowered,liquid and solid fuel burning, portable, radiant space heaters, and accessories.

SPACE HEATER LARGE - RADIANT, NON-POWERED, LIQUID& SOLID FUEL

DOD MIL-HDBK-240-2002 军用器材(HERO)电磁辐射危险测试指南

The following documents and publications form a part of this handbook to the extent specified herein. These documents are the most relevant to fully understand the information provided by this handbook.

HAZARDS OF ELECTROMAGNETIC RADIATION TO ORDNANCE (HERO) TEST GUIDE

DIN 50453-3:2001 半导体技术试验.蚀刻混合剂浸蚀率测定.第3部分:铝.测重法

The document specifies the test method for the determination of etch rates of etch mixtures at alumnium substrates. It supplements the chemical analysis which is more expensive and does not give information on etch characteristics of the etch mixtures.

Testing of materials for semiconductor technology - Determination of etch rates of etching mixtures - Part 3: Aluminium, gravimetric method

ASTM F978-90(1996)e1 用瞬态电容技术表征半导体深能级的标准试验方法

1.1 This test method covers three procedures for determining the density, activation energy, and prefactor of the exponential expression for the emission rate of deep-level defect centers in semiconductor depletion regions by transientcapacitance techniques. Procedure A is the conventional, constant voltage, deep-level transient spectroscopy (DLTS) technique in which the temperature is slowly scanned and an exponential capacitance transient is assumed. Procedure B is the conventional DLTS (Procedure A) with corrections for nonexponential transients due to heavy trap doping and incomplete charging of the depletion region. Procedure C is a more precise referee technique that uses a series of isothermal transient measurements and corrects for the same sources of error as Procedure B. 1.2 This standard does not purport to address all of the safety concerns, if any, associated with its use. It is the responsibility of the user of this standard to establish appropriate safety and health practices and determine the applicability of regulatory limitations prior to use.

Standard Test Method for Characterizing Semiconductor Deep Levels by Transient Capacitance Techniques

DIN 50454-1:2000 半导体工艺材料的检验.Ⅲ-Ⅴ化合物单晶体错位的测定.第1部分:砷化镓

The standard specifies a method for the revelation of dislocations in monocrystals, bar-shaped of gallium arsenide specimens with polished, polished-etched, or sawed surfaceoriented in (111)-Ga and (100) crystal planes using structure etching and the determiantion of the density on the surface and the local distrubution of these dislocations.#,,#

Testing of materials for semiconductor technology - Determination of dislocations in monocrystals of III-V-compound semi-conductors - Part 1: Gallium arsenide

ASTM F1049-00 硅片上浅蚀坑检测的标准实施规程

1.1 This practice is used to detect shallow etch pits, which may be related to the level of metallic impurities near the surface of silicon epitaxial or polished wafers. 1.2 This practice is not recommended for use in defect density evaluations, but as a subjective means of estimating defect densities and distributions on the surface of a polished or epitaxial wafer. 1.3 Silicon crystals doped either p- or n-type and with resistivities as low as 0.005 [omega][dot]cm may be evaluated. This practice is applicable for silicon wafers grown in either a (111) or (100) crystal orientation. 1.4 This practice utilizes a thermal oxidation process followed by a chemical preferential etchant to create and then delineate shallow etch pits. 1.5 The values stated in acceptable metric units are to be regarded as the standard. The values in parentheses are for information only. 1.6 This standard does not purport to address all of the safety concerns, if any, associated with its use. It is the responsibility of the user of this standard to establish appropriate safety and health practices and determine the applicability of regulatory limitations prior to use. Specific hazard statements are given in Section 9.

Standard Practice for Shallow Etch Pit Detection on Silicon Wafers

SJ 20744-1999 半导体材料杂质含量红外吸收光谱分析通用导则

本标准规定了半导体材料中杂质含量的红外吸收分析方法的术语、基本原理、仪器设备、样品制备、测量条件、测量步骤和测量结果的计算。 本标准适用于在红外光谱区为透明的并在该区域产生杂质吸收带的任何半导体单晶材料红外分析方法。

General rule of infrared absorption spectral analysis for the impurity concentration in semiconductor materials

DIN 50455-2:1999 半导体技术用材料的试验.表征光敏抗蚀剂的方法.第2部分:阳极光敏抗蚀剂的光敏度的测定

The method according to the document covers the characterization of photoresists by comparison of the determined photosensitivity of a single-layer positive photoresist on silicon wafers with a reference photoresist.

Testing of materials for semiconductor technology - Methods for the characterisation photoresists - Part 2: Determination of photosensitivity of positive photoresists

KS D 0260-1999 四点探针法测试单晶硅片电阻率的方法

TESTING METHODS OF RESISTIVITY FOR SINGLE CRYSTAL SILICON WAFERS WITH FOUR-POINT PROBE

DIN 50456-3:1999 半导体工艺技术用材料的试验.电子元件模塑化合物材料的特性表示法.第3部分:阳离子杂质的测定

The document defines a method for the determination of Na, K and CA in moulding compounds for electronic components by analysis of an aqueous extract of the epoxy resin moulding compound by means of the pressure cooker test according to DIN 50456-2.#,,#

Testing of materials for semiconductor technology - Method for the characterisation of moulding compounds for electronic components - Part 3: Determination of cationic impurities

DIN 50441-4:1999 半导体工艺用材料的试验.半导体圆片几何尺寸的测定.第4部分:圆片直径,直径变化量,扁片直径,扁片长度和扁片厚度

The methods according to the document cover the determination of the slice diameter, diameter variation, flat diameter, flat length and flat depth. They are nondestructive regarding mechanical damages.#,,#

Testing of materials for semiconductor technology - Determination of the geometric dimensions of semiconductor wafers - Part 4: Slice diameter, diamter variation, flat diameter, flat length, flat depth

VDI/VDE 3717 Blatt 6-1999 掩模工程 薄膜

These specifications cover the general requirements for pellicles used as a protection on photomasks. The specifications widely correspond to the standardizations prepared by SEMI (Semiconductor Equipment and Materials Institute) in the USA. Applications using deep-UV-exposure (wayelength

Mask engineering - Pellicles

DIN 50440:1998 半导体工艺材料的试验.硅单晶中载流子寿命的测量.用光电导法在微小喷射时测量复合载流子寿命

The method according to the document covers the determination of the recombination carrier lifetime at low injection by the photo conductive decay method.

Testing of materials for semiconductor technology - Measurement of carrier lifetime in silicon single crystals - Recombination carrier lifetime at low injection by photoconductivity method

DIN 50441-2:1998 半导体工艺材料的试验.半导体芯片几何尺寸的测量.第2部分:棱角剖面的试验

The document specifies four test methods for determination of the edge profile of semiconductor wafers. Three methods base on optical projection, the fourth method specifies the determination of the profile length by a measuring microscope.#,,#

Testing of materials for semiconductor technology - Determination of the geometric dimensions of semiconductor wafers - Part 2: Testing of edge profile

SJ 20714-1998 砷化镓抛光片亚损伤层的X射线双晶衍射试验方法

本标准规定了砷化镓抛光片亚损伤层的X射线双晶衍射试验方法。 本标准适用于经过化学、机械单面和双面抛光的砷化镓晶片亚损伤层的定性测量。

Test method for sub-surface damege of gallium arsenide polished wafer by X-ray double crystal diffraction

SJ 20713-1998 砷化镓用高纯镓中铜、锰、镁、钒、钛等12种杂质的等离子体光谱分析法

本标准规定了高纯镓中铜、锰、镁、矾、钛等12种金属杂质的等离子体光谱测定方法。

Method for the determination of 12 species of impurities including copper,maganese,magnesium,vanadium,titanium in high-purity gallium used for gallium arsenide by ICP spectrometry

SJ 20718-1998 碲镉汞晶体中痕量元素的测定方法

本标准规定了定量测定碲镉汞晶体中痕量元素钠、银、铜的方法。 本标准适用于无火焰原子吸收法测定碲镉汞晶体中痕量元素钠、银、铜。

Method of determination trace elements in mercury cadmium telluride crystal

SJ 20719-1998 碲镉汞晶体X值的X-射线荧光法测定方法

本标准规定了用X-射线荧光法测定碲镉汞晶片的组分X值。 本标准适用于X值在0.100～0.350mo1范围内的碲镉汞晶片组分X值定量测定。

Method of determination X value for mercury cadmium telluride for use in X-ray fluorimetry

DIN 50449-2:1998 半导体工艺材料试验.通过红外线吸收测定半导体中杂质含量.第2部分:砷化镓中的硼

The method specified in this document covers the determination of the boron content in gallium arsenide by infrared absorption. It is used for semiisolating single-crystal gallium arsenide with a resistivity greater than 10 cm6.

Testing of materials for semiconductor technology - Determination of impurity content in semiconductors by infrared absorption - Part 2: Boron in gallium arsenide