29.045 半导体材料 标准查询与下载

T/SDPEA 0004-2018 半导体冷凝式智能除湿装置技术要求

本标准规定了基于半导体制冷技术的冷凝除湿装置（以下简称装置）的技术要求、试验方法、检验 规则及标志、包装、运输和贮存等。 本标准适用于安装在开关柜、汇控柜、机构箱、端子箱、环网柜等电力箱柜内的除湿装置，其它除 湿装置也可参照使用。

Specification for semiconductor condensing intelligent dehumidification equipment

T/IAWBS 006-2018 碳化硅混合模块测试方法

本标准规定了由硅基绝缘栅双极晶体管（IGBT）以及碳化硅肖特基二极管构成的混合功率半导体模块的术语、文字符号、基本额定值和特性以及测试方法等产品特性要求。 本标准规定了极限值试验，特性参数测试、耐久性测试，根据特性参数确认模块特性，由此判断是否通过极限值试验。参数包括（集电极-发射极电压VCES, 二极管反向电压VR、集电极-发射极短路时的栅极-发射极电压±VGES、最大集电极电流IC、二极管正向（直流）电流IF、集电极峰值电流ICM、二极管正向峰值电流IFM、反偏安全工作区RBSOA、短路安全工作区1 SCSOA1、二极管正向（不重复）浪涌电流IFSM、端子和底板之间的绝缘电压Visol等）。 本标准还规定了检测报告中应给出的信息。

Test methods for hybrid silicon carbide modules

T/IAWBS 005-2018 6 英寸碳化硅单晶抛光片

本标准适用于6 英寸4H 及6H 碳化硅单晶研磨片经单面或双面抛光后制备的碳化硅抛光片。规定了6 英寸4H 及6H 碳化硅单晶抛光片的必要的相关性术语、产品分类、技术要求、试验方法、检测规则以及标志、包装、运输、贮存等。本标准规定了碳化硅抛光片的晶向为碳化硅抛光片表面取向的正交晶向偏离为：a) 正晶向：0° ± 0.5°; b) 偏晶向：碳化硅抛光片的晶向偏离为晶片表面法线沿主定位边方向偏向[1120]方向4°±0.5°或其它角度。同时本标准还规定了表面缺陷、微管密度、结晶质量、电阻率、多型、位错密度等内容。

6 inch polished monocrystalline silicon carbide wafers

T/IAWBS 007-2018 4H 碳化硅同质外延层厚度的红外反射测量方法

本标准规定了4H-N型重掺杂碳化硅衬底（N型掺杂浓度>5×1018 cm-3）上同质外延层（掺 杂浓度5×1014cm-3-5×1016 cm-3）厚度的红外反射测量方法。 本标准适用于2-100微米的碳化硅外延层。 本标准规定的方法是 4H 碳化硅衬底与外延层因掺杂浓度的不同导致两者具有不同的折射率，因此试样的反射光谱会出现反映外延层厚度信息的连续干涉条纹。当外延层表面反射的光束和衬底界面反射的光束的光程差是半波长的整数倍时，反射光谱中可以观察到极大极小值。 根据反射谱中干涉条纹的极值峰位，试样的光学常数以及入射角可以计算出相应的外延层厚度。 4H 碳化硅外延层的厚度检测原理如图2：入射光由A 处入射，经由外延表面AC 反射，同时经过折射在衬底和外延界面B 处反射，由C 处射出，和D 处的反射光之间的相位差δ即可求得。

Test method for thickness of 4H silicon carbide homo-epitaxial layers by infrared reflectance

ASTM D6095-12(2018) 用于挤出交联和热塑性半导体导体和绝缘屏蔽材料的体积电阻率的纵向测量的标准测试方法

1.1 This test method covers the procedure for determining the volume resistivity, measured longitudinally, of extruded crosslinked and thermoplastic semiconducting, conductor and insulation shields for wire and cable. 1.2 In common practice the conductor shield is often referred to as the strand shield. 1.3 Technically, this test method is the measurement of a resistance between two electrodes on a single surface and modifying that value using dimensions of the specimen geometry to calculate a resistivity. However, the geometry of the specimen is such as to support the assumption of a current path primarily throughout the volume of the material between the electrodes, thus justifying the use of the term “longitudinal volume resistivity.” (See 3.1.2.1.) 1.4 Whenever two sets of values are presented, in different units, the values in the first set are the standard, while those in parentheses are for information only. 1.5 This standard does not purport to address all of the safety concerns, if any, associated with its use. It is the responsibility of the user of this standard to establish appropriate safety, health, and environmental practices and determine the applicability of regulatory limitations prior to use. For a specific hazard statement, see 7.1. 1.6 This international standard was developed in accordance with internationally recognized principles on standardization established in the Decision on Principles for the Development of International Standards, Guides and Recommendations issued by the World Trade Organization Technical Barriers to Trade (TBT) Committee.

Standard Test Method for Longitudinal Measurement of Volume Resistivity for Extruded Crosslinked and Thermoplastic Semiconducting Conductor and Insulation Shielding Materials

T/ZZB 0648-2018 200 mm重掺磷直拉硅单晶抛光片

本标准规定了200 mm重掺磷直拉硅单晶抛光片的术语和定义、产品分类、基本要求、技术要求、试验方法、检验规则、包装、标志、运输和贮存、订货单（或合同）内容和质量承诺。 本标准适用于以电子级多晶硅为主要原材料，采用直拉法制备的直径为200 mm的硅单晶抛光片。产品主要用于集成电路、分立器件用外延片的衬底。

200 mm heavily phosphorus-doped single crystalline Czochralski silicon polished wafers

T/CAS 304-2018 磁控溅射硅靶材及绑定靶材

本标准规定了磁控溅射硅靶材的分类及牌号、原料、技术要求、试验方法、检验规则、标志、包装、运输、贮存、供货状态及订货单（或合同）内容。 本标准适用于半导体等电子器件用的各种磁控溅射硅靶材。

Magnetron sputtering silicon targets and bound targets

T/IAWBS 003-2017 碳化硅外延层载流子浓度测定_汞探针电容-电压法

本标准规定了碳化硅（4H-SiC）外延层载流子浓度的测定方法─汞探针电容－电压法。　 本标准适用于单层同质碳化硅外延层载流子浓度的测量，要求测量的碳化硅外延层厚度必须大于测试偏压下耗尽层的宽度。载流子浓度测量范围为：1×1014　cm-3　～5×1017　cm-3。　 本标准也可适用于碳化硅衬底载流子浓度的测量。

Determination of Carrier Concentration in SiC Epitaxial Layer_Mercury Probe Capacitance-Voltage Method

T/IAWBS 002-2017 碳化硅外延片表面缺陷测试方法

本标准规定了功率器件用碳化硅外延片表面缺陷的无损光学测量方法。  本标准适用于同质的超过（含）2微米厚的碳化硅外延层。

Test method for surface defect of silicon carbide epitaxial wafer

T/CPIA 0004-2017 光伏组件封装用乙烯-醋酸乙烯酯共聚物（EVA）胶膜

本标准规定了光伏组件封装用乙烯-醋酸乙烯酯共聚物（EVA）胶膜（以下简称EVA胶膜）的术语和定义、要求、试验方法、检测规则、包装、标志、运输和贮存。 本标准适用于地面晶体硅光伏组件封装用EVA胶膜，薄膜组件可参照使用。

Ethylene-vinyl acetate copolymer (EVA) adhesive film for photovoltaic module encapsulation

T/CPIA 0001-2007 地面光伏组件 光伏组件设计鉴定和定型质量保证导则

本导则适用于按照IEC 61215进行光伏组件设计鉴定和定型的组件生产厂。本导则的目的是为通过认证的光伏组件的性能和可靠性的一致性提供更高的置信度。本导则是在假设组织的质量管理体系已经满足GB/T 19001或者相应质量管理体系要求的基础上，提出的具体要求。通过按照本导则对制造系统进行维护，期望光伏组件产品的性能与通过IEC 61215或者IEC 62108的试验序列测定的性能保持一致。

Ground-mounted photovoltaic modules Photovoltaic module design qualification and finalization quality assurance guidelines

T/CPIA 0006-2017 光伏组件封装用共聚烯烃胶膜

本标准规定了光伏组件封装用共聚烯烃（PO）胶膜（以下简称PO胶膜）的术语和定义、要求、试验方法、检测规则、包装、标志、运输和贮存。 本标准适用于地面晶体硅光伏组件封装用交联型PO胶膜和热塑型PO胶膜,薄膜组件可参照使用。

Copolyolefin film for photovoltaic module encapsulation

T/CPIA 0005-2017 光伏涂锡焊带

本标准规定了光伏涂锡焊带的术语和定义、要求、试验方法、检验规则和标志、包装、运输、贮存。 本标准适用于地面晶体硅光伏组件用涂锡焊带以及薄膜组件用汇流带。

Photovoltaic tinned ribbon

T/CPIA 0003-2017 地面用晶体硅光伏组件外形尺寸及安装孔技术要求

本标准规定了带边框的地面用晶体硅光伏组件的外形尺寸、安装孔位置和安装孔尺寸。 本标准适用于60/72片太阳电池（电池尺寸：156.75mm±0.25mm）组件（系统电压≤1500V，且符合IEC61730-1中污染等级1或者污染等级2/材料组Ⅰ的规定，双玻组件与双面发电组件除外）。

Dimensions and Technical Requirements for Mounting Holes of Crystalline Silicon Photovoltaic Modules for Ground Use

T/SZSA 015-2017 COB LED 光源封装产品技术规范

范围 规范性引用文件 术语和定义 分类与分档 分类方法 命名规则 要求 外观 光电技术参数要求 环境适应性的要求 有害物质限值 寿命 检测方法 检测条件 外观 光、电和颜色性能 寿命与光通量维持率 环境适应性 有害物质限值 检验规则 标识、使用说明、包装、存储 标识 使用说明书 包装 运输 贮存 本标准规定了COB LED光源的分类、命名规则、技术要求、检验方法、包装和和贮存方面的要求。 本标准适用于COB LED光源。 注：本标准不适用于驱动电源与LED光源一体的COB(即：光引擎）。

COB LED light source packaging product technical specification

ASTM F980-16 硅半导体器件中子诱发位移损伤快速退火的标准指南

1.1 This guide defines the requirements and procedures for testing silicon discrete semiconductor devices and integrated circuits for rapid-annealing effects from displacement damage resulting from neutron radiation. This test will produce degradation of the electrical properties of the irradiated devices and should be considered a destructive test. Rapid annealing of displacement damage is usually associated with bipolar technologies. 1.1.1 Heavy ion beams can also be used to characterize displacement damage annealing (1)2 , but ion beams have significant complications in the interpretation of the resulting device behavior due to the associated ionizing dose. The use of pulsed ion beams as a source of displacement damage is not within the scope of this standard. 1.2 The values stated in SI units are to be regarded as standard. No other units of measurement are included in this standard. 1.3 This standard does not purport to address all of the safety concerns, if any, associated with its use. It is the responsibility of the user of this standard to consult and establish appropriate safety and health practices and determine the applicability of regulatory limitations prior to use.

Standard Guide for Measurement of Rapid Annealing of Neutron-Induced Displacement Damage in Silicon Semiconductor Devices

YS/T 724-2016 多晶硅用硅粉

Silicon powder for polycrystalline silicon

YS/T 1160-2016 工业硅粉定量相分析 二氧化硅含量的测定 X射线衍射K值法

Quantitative phase analysis of industrial silicon powder Determination of silica content X-ray diffraction K value method

YS/T 1167-2016 硅单晶腐蚀片

本标准规定了硅单晶腐蚀片的牌号及分类、要求、试验方法、检验规则以及标志、包装、运输、贮存、质量证明书和订货单(或合同)内容。 本标准适用于直拉法、悬浮区熔法(包括区熔中子嬗变和气相掺杂)制备的硅单晶研磨片经化学腐蚀液去除表面损伤层后制备的酸腐蚀片和碱腐蚀片(以下简称腐蚀片)。产品主要用于制作晶体管、整流管、特大功率晶闸管、光电器件等半导体元器件或进一步加工成硅抛光片。

Monocrystalline silicon etched wafers

ASTM F76-08(2016)e1 测量单晶半导体电阻率和霍尔系数及测定霍尔迁移率的标准试验方法

1.1 These test methods cover two procedures for measuring the resistivity and Hall coefficient of single-crystal semiconductor specimens. These test methods differ most substantially in their test specimen requirements. 1.1.1 Test Method A, van der Pauw (1) 2 —This test method requires a singly connected test specimen (without any isolated holes), homogeneous in thickness, but of arbitrary shape. The contacts must be sufficiently small and located at the periphery of the specimen. The measurement is most easily interpreted for an isotropic semiconductor whose conduction is dominated by a single type of carrier. 1.1.2 Test Method B, Parallelepiped or Bridge-Type—This test method requires a specimen homogeneous in thickness and of specified shape. Contact requirements are specified for both the parallelepiped and bridge geometries. These test specimen geometries are desirable for anisotropic semiconductors for which the measured parameters depend on the direction of current flow. The test method is also most easily interpreted when conduction is dominated by a single type of carrier. 1.2 These test methods do not provide procedures for shaping, cleaning, or contacting specimens; however, a procedure for verifying contact quality is given. NOTE 1—Practice F418 covers the preparation of gallium arsenide phosphide specimens. 1.3 The method in Practice F418 does not provide an interpretation of the results in terms of basic semiconductor properties (for example, majority and minority carrier mobilities and densities). Some general guidance, applicable to certain semiconductors and temperature ranges, is provided in the Appendix. For the most part, however, the interpretation is left to the user. 1.4 Interlaboratory tests of these test methods (Section 19) have been conducted only over a limited range of resistivities and for the semiconductors, germanium, silicon, and gallium arsenide. However, the method is applicable to other semiconductors provided suitable specimen preparation and contacting procedures are known. The resistivity range over which the method is applicable is limited by the test specimen geometry and instrumentation sensitivity. 1.5 The values stated in acceptable metric units are to be regarded as the standard. The values given in parentheses are for information only. (See also 3.1.4.) 1.6 This standard does not purport to address all of the safety concerns, if any, associated with its use. It is the responsibility of the user of this standard to establish appropriate safety and health practices and determine the applicability of regulatory limitations prior to use. 1.7 This international standard was developed in accordance with internationally recognized principles on standardization established in the Decision on Principles for the Development of International Standards, Guides and Recommendations issued by the World Trade Organization Technical Barriers to Trade (TBT) Committee.

Standard Test Methods for Measuring Resistivity and Hall Coefficient and Determining Hall Mobility in Single-Crystal Semiconductors