29.045 半导体材料 标准查询与下载

ASTM F76-08(2016)e1 测量单晶半导体电阻率和霍尔系数及测定霍尔迁移率的标准试验方法

1.1 These test methods cover two procedures for measuring the resistivity and Hall coefficient of single-crystal semiconductor specimens. These test methods differ most substantially in their test specimen requirements. 1.1.1 Test Method A, van der Pauw (1) 2 —This test method requires a singly connected test specimen (without any isolated holes), homogeneous in thickness, but of arbitrary shape. The contacts must be sufficiently small and located at the periphery of the specimen. The measurement is most easily interpreted for an isotropic semiconductor whose conduction is dominated by a single type of carrier. 1.1.2 Test Method B, Parallelepiped or Bridge-Type—This test method requires a specimen homogeneous in thickness and of specified shape. Contact requirements are specified for both the parallelepiped and bridge geometries. These test specimen geometries are desirable for anisotropic semiconductors for which the measured parameters depend on the direction of current flow. The test method is also most easily interpreted when conduction is dominated by a single type of carrier. 1.2 These test methods do not provide procedures for shaping, cleaning, or contacting specimens; however, a procedure for verifying contact quality is given. NOTE 1—Practice F418 covers the preparation of gallium arsenide phosphide specimens. 1.3 The method in Practice F418 does not provide an interpretation of the results in terms of basic semiconductor properties (for example, majority and minority carrier mobilities and densities). Some general guidance, applicable to certain semiconductors and temperature ranges, is provided in the Appendix. For the most part, however, the interpretation is left to the user. 1.4 Interlaboratory tests of these test methods (Section 19) have been conducted only over a limited range of resistivities and for the semiconductors, germanium, silicon, and gallium arsenide. However, the method is applicable to other semiconductors provided suitable specimen preparation and contacting procedures are known. The resistivity range over which the method is applicable is limited by the test specimen geometry and instrumentation sensitivity. 1.5 The values stated in acceptable metric units are to be regarded as the standard. The values given in parentheses are for information only. (See also 3.1.4.) 1.6 This standard does not purport to address all of the safety concerns, if any, associated with its use. It is the responsibility of the user of this standard to establish appropriate safety and health practices and determine the applicability of regulatory limitations prior to use. 1.7 This international standard was developed in accordance with internationally recognized principles on standardization established in the Decision on Principles for the Development of International Standards, Guides and Recommendations issued by the World Trade Organization Technical Barriers to Trade (TBT) Committee.

Standard Test Methods for Measuring Resistivity and Hall Coefficient and Determining Hall Mobility in Single-Crystal Semiconductors

SJ/T 11552-2015 以布鲁斯特角入射P偏振辐射红外吸收光谱法测量硅中间隙氧含量

本标准规定了以布鲁斯特角入射P偏振辐射红外吸收光谱法测量硅中间隙氧含量的方法。 本标准适用于测试室温下电阻率大于5 Ω·cm的硅单晶中间隙氧含量，特别适用于薄硅片样品中氧含量的测量。氧含量的有效范围从1×10 at·cm至硅单晶中间隙氧的最大固溶度。

Test methods for measurement of interstitial oxygen content of silicon wafers by infrared absorption with P-polarized radiation incident at the Brewster angle

SJ/T 11502-2015 碳化硅单晶抛光片规范

本规范规定了碳化硅单晶抛光片的术语和定义、牌号、要求、试验方法、检验规则以及包装、标志、贮存和运输等内容。本规范适用于晶型为6H和4H,单面或双面抛光,直径100 mm及以下的碳化硅单晶抛光片。其它晶型或尺寸的碳化硅单晶抛光片可参照使用。

Specification for polished monocrystalline silicon carbide wafers

SJ/T 11487-2015 半绝缘半导体晶片电阻率的无接触测量方法

本标准规定了半绝缘半导体晶片电阻率的无接触测量方法。本标准适用于半绝缘砷化镓、磷化铟、碳化硅等高阻半导体材料电阻率的测量,电阻率的测量范围为10 Ω·cm~10 Ω·cm。

Non-contact measurement method for the resistivity of semi-insulating semiconductor wafer

SJ/T 11488-2015 半绝缘砷化镓电阻率、霍尔系数和迁移率测试方法

本标准规定了半绝缘砷化镓单晶电阻率、霍尔系数和霍尔迁移率的测量方法。本标准适用于电阻率在10 Ω·cm~10 Ω·cm范围内的半绝缘砷化镓单晶材料电学参数的测量。

Test method for measuring resistivity, hall coefficient and determining hall mobility in semi-insulating GaAs single crystals

SJ/T 11491-2015 短基线红外吸收光谱法测量硅中间隙氧含量

本标准规定了用短基线红外光谱法测定硅中间隙氧含量。本标准适用于在室温下用短基线红外吸收法,测量低电阻率的n型硅单晶和p型硅单晶中间隙氧含量。测量氧含量的有效范围从1×10 at · cm至硅单晶中间隙氧的最大固溶度的测试。

Test methods for measurement of interstitial oxygen content in silicon by short baseline infrared absorption spectrometry

SJ/T 11492-2015 光致发光法测定磷镓砷晶片的组分

本标准规定了采用光致发光测试系统对表面经过处理的磷镓砷(GaAP)晶片组分进行测试的方法。本标准适用于气相外延生长的,光致发光峰(λ)在640 nm~670 nm范围内时,对应磷的摩尔分数为36%到42%的n型GaAP晶片。

Test methods for measurement of composition of gallium arsenide phosphide wafers by photoluminescence

SJ/T 11493-2015 硅衬底中氮浓度的二次离子质谱测量方法

本标准规定了用二次离子质谱法(SIMS)对硅衬底单晶体材料中氮总浓度的测试方法。本标准适用于锑、砷、磷的掺杂浓度

Test method for measuring nitrogen concentration in silicon substrates by secondary ion mass spectrometry

SJ/T 11495-2015 硅中间隙氧的转换因子指南

本标准规定了硅中间隙氧的转换因子指南。本标准适用于在室温下测试电阻率大于0.1 Ω·cm的n型硅单晶和电阻率大于0.5 Ω·cm的p型硅单晶中间隙氧含量。

Guide to conversion factors for interstitial oxygen in silicon

SJ/T 11496-2015 红外吸收法测量砷化镓中硼含量

本标准规定了在77 K时,用红外吸收法来测定砷化镓(GaAs)中替位硼含量的方法。本标准适用于电阻率大于10 Ω ? cm的半绝缘砷化镓单晶中替位硼含量的测试,测量硼含量的有效范围是从1×10 at ? cm到2×10 at ? cm。

Determination of boron concentration in gallium arsenide by infrared absorption

SJ/T 11497-2015 砷化镓晶片热稳定性的试验方法

本标准规定了半绝缘砷化镓(GaAs)晶片热稳定性的试验方法。本标准适用于电阻率在10Ω·cm~10Ω·cm范围半绝缘砷化镓单晶材料的热稳定性试验。

Test method for thermal stability testing of gallium arsenide wafers

SJ/T 11498-2015 重掺硅衬底中氧浓度的二次离子质谱测量方法

本标准规定了用二次离子质谱法(SIMS)对重掺硅衬底单晶体中氧浓度总量的测试方法。本标准适用于硼、锑、砷、磷的掺杂浓度

Test method for measuring oxygen contamination in heavily doped silicon substrates by secondary ion mass spectrometry

SJ/T 11499-2015 碳化硅单晶电学性能的测试方法

本标准规定了碳化硅晶体材料导电类型、电阻率、迁移率、载流子浓度的测试方法。本标准适用于在(-263.15~426.85)℃温度范围内,电阻率在1×10 Ω·cm以下、晶型为6H和4H的碳化硅单晶的电学性能测试。

Test method for measuring electrical properties of monocrystalline silicon carbide

SJ/T 11501-2015 碳化硅单晶晶型的测试方法

本标准规定了利用拉曼光谱测定碳化硅单晶结晶类型的方法。本标准适用于碳化硅单晶晶型的测定。

Test method for determining crystal type of monocrystalline silicon carbide

SJ/T 11503-2015 碳化硅单晶抛光片表面粗糙度的测试方法

本标准规定了测试碳化硅单晶抛光片表面粗糙度的方法,包括表面轮廓仪法和原子力显微镜法。本标准适用于碳化硅单晶抛光片表面粗糙度的测试。其中,原子力显微镜法仅适用于经过化学机械抛光或光学抛光且表面粗糙度的起伏在零点几纳米至几微米范围内的碳化硅单晶抛光片。

Test methods for measuring surface roughness of polished monocrystalline silicon carbide wafers

SJ/T 11504-2015 碳化硅单晶抛光片表面质量的测试方法

本标准规定了碳化硅单晶抛光片(以下简称“抛光片”)表面质量的目视检验方法。本标准适用于单面或者双面抛光的碳化硅单晶抛光片表面质量的检测。

Test method for measuring surface quality of polished monocrystalline silicon carbide

SJ/T 11505-2015 蓝宝石单晶抛光片规范

本标准规定了衬底和红外探测器窗口用蓝宝石单晶抛光片的技术要求、测试方法、检验规则、标志、包装、运输和贮存等内容。本标准适用于泡生法和直拉法生长的蓝宝石单晶抛光片,其它方法生长的蓝宝石单晶抛光片也可参照本标准。

Sapphire single crystal polished wafers specification

YS/T 13-2015 高纯四氯化锗

本标准规定了高纯四氯化锗的要求、检验方法、检验规则、标志、包装、运输、贮存、质量证明书和订货单(或合同)内容等。 本标准适用于以粗四氯化锗为原料，经提纯工艺制备的高纯四氯化锗。产品主要用作石英光导纤维的掺杂剂及高纯二氧化锗的制备。

High pure germanium tetrachloride

SJ/T 11490-2015 低位错密度砷化镓抛光片蚀坑密度的测量方法

本标准规定了低位错密度砷化镓(GaAs)抛光片腐蚀坑密度(EPD)的测量方法。本标准适用于直径2英寸和3英寸且EPD小于5 000/cm的圆形GaAs晶片的EPD的测量。

Test method for measuring etch pit density(EPD) in low dislocation density gallium arsenide wafers

SJ/T 11494-2015 硅单晶中III-V族杂质的光致发光测试方法

本标准规定了硅单晶中硼、磷杂质的光致发光测试方法。本标准适用于低位错密度(< 500个/cm)硅单晶中导电性杂质硼、磷含量的测定,同时也适用于检测硅单晶中含量为1×10 at • cm~5×10 at·cm的各种电活性杂质。

Test methods for photoluminescence analysis of single crystal silicon for III-V impurities