H17 半金属及半导体材料分析方法 标准查询与下载



共找到 221 条与 半金属及半导体材料分析方法 相关的标准,共 15

Test method for the content of surface metal elements on silicon wafers—Inductively coupled plasma mass spectrometry

ICS
77.040
CCS
H17
发布
2020-10-11 00:00:00.0
实施
2021-09-01 00:00:00.0

Test method for magnesium content in gallium nitride materials—Secondary ion mass spectrometry

ICS
77.040
CCS
H17
发布
2020-10-11 00:00:00.0
实施
2021-09-01 00:00:00.0

Test method for the oxygen concentration in silicon materials—Inert gas fusion infrared detection method

ICS
77.040
CCS
H17
发布
2020-07-21 00:00:00.0
实施
2021-06-01 00:00:00.0

Methods for chemical analysis of silicon metal—Part 3:Determination of calcium content

ICS
77.040.30
CCS
H17
发布
2020-03-06 00:00:00.0
实施
2021-02-01 00:00:00.0

Methods for chemical analysis of silicon metal—Part 1:Determination of iron content

ICS
77.040.30
CCS
H17
发布
2020-03-06 00:00:00.0
实施
2021-02-01 00:00:00.0

Test method for chloride content of silicon—Ion chromatography method

ICS
77.040
CCS
H17
发布
2019-03-25 00:00:00.0
实施
2020-02-01 00:00:00.0

Test method for chloride content of silicon—Ion chromatography method

ICS
77.040
CCS
H17
发布
2019-03-25 00:00:00.0
实施
2020-02-01 00:00:00.0

Test method for chloride content of silicon—Ion chromatography method

ICS
77.040
CCS
H17
发布
2019-03-25 00:00:00.0
实施
2020-02-01 00:00:00.0

Test method for the content of metal impurity in electronic grade polysilicon—Inductively coupled-plasma mass spectrometry method

ICS
77.040.30
CCS
H17
发布
2018-12-28 00:00:00.0
实施
2019-04-01 00:00:00.0

Methods for chemical analysis of germanium metal—Part 2:Determination of aluminium,iron,copper,nickle,lead,cadmium, magnesium,cobalt,indium,zinc content—Inductively coupled plasma mass spectrometry method

ICS
77.040
CCS
H17
发布
2018-12-28 00:00:00.0
实施
2019-11-01 00:00:00.0

Test method for phosphorus content in polycrystalline silicon by zone-melting method under controlled atmosphere

ICS
77.040
CCS
H17
发布
2018-12-28 00:00:00.0
实施
2019-11-01 00:00:00.0

Methods for chemical analysis of germanium metal—Part 1:Determination of arsenic content—Arsenic stain method

ICS
77.040
CCS
H17
发布
2018-12-28 00:00:00.0
实施
2019-11-01 00:00:00.0

Test method for boron content in polycrystalline silicon by vacuum zone-melting method

ICS
77.040
CCS
H17
发布
2018-09-17 00:00:00.0
实施
2019-06-01 00:00:00.0

Test method for determining interstitial oxygen content in silicon by infrared absorption

ICS
77.040
CCS
H17
发布
2018-09-17 00:00:00.0
实施
2019-06-01 00:00:00.0

Test method for carbon and oxygen content of single crystal silicon—Low temperature fourier transform infrared spectrometry

ICS
77.040
CCS
H17
发布
2017-12-29 00:00:00.0
实施
2018-07-01 00:00:00.0

Test method for carbon and oxygen content of single crystal silicon—Low temperature fourier transform infrared spectrometry

ICS
77.040
CCS
H17
发布
2017-12-29 00:00:00.0
实施
2018-07-01 00:00:00.0

Practice for evaluation of granular polysilicon by melter-zoner and spectroscopies

ICS
77.040
CCS
H17
发布
2017-12-29 00:00:00.0
实施
2018-07-01 00:00:00.0

Measurement method for surface metal contamination on sapphire polished substrate wafer

ICS
77.040
CCS
H17
发布
2017-10-14 00:00:00.0
实施
2018-05-01 00:00:00.0

本标准规定了半绝缘砷化镓单晶深施主EL2浓度的红外吸收测试方法。 本标准适用于电阻率大于10 Ω ? cm的非掺杂和碳掺杂半绝缘砷化镓单晶深施主EL2浓度的测定。 本标准不适用于掺铬半绝缘砷化镓单晶深施主EL2浓度的测定。

Test method for the EL2 deep donor concentration in semi-insulating gallium arsenide single crystals by infrared absorption spectroscopy

ICS
77.040
CCS
H17
发布
2015-12-10
实施
2016-07-01

本标准规定了半绝缘砷化镓单晶中碳浓度的红外吸收测试方法。 本标准适用于电阻率大于10Ω ? cm的非掺杂和碳掺杂半绝缘砷化镓单晶中碳浓度的测定。测量范围:室温下从1.0 × 10 atoms/cm到代位碳原子的最大溶解度,77 K时检测下限为4.0×10 atoms/cm。

Test methods for carbon acceptor concentration in semi-insulating gallium arsenide single crystals by infrared absorption spectroscopy

ICS
77.040
CCS
H17
发布
2015-12-10
实施
2016-07-01



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