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silicon wafer

silicon wafer, Total:57 items.

In the international standard classification, silicon wafer involves: Non-ferrous metals, Solar energy engineering, Semiconducting materials, Electricity. Magnetism. Electrical and magnetic measurements, Vocabularies, Analytical chemistry, Galvanic cells and batteries, Integrated circuits. Microelectronics, Energy and heat transfer engineering in general, GENERALITIES. TERMINOLOGY. STANDARDIZATION. DOCUMENTATION.

Korean Agency for Technology and Standards (KATS), silicon wafer

• KS D 0261-2012(2017) Visual inspection for silicon wafers with specular surfaces
• KS C 0256-2002(2017) Testing method of resistivity for silicon crystals and silicon wafers with four - point probe
• KS C 0256-2002(2022) Testing method of resistivity for silicon crystals and silicon wafers with four - point probe

JP-JEITA, silicon wafer

• JEITA EM-3510-2007 Edge Roll-Off Measurement Method for Silicon Wafers

German Institute for Standardization, silicon wafer

• DIN V VDE V 0126-18-3:2007 Solar wafers - Part 3: Alkaline corrosion damage of crystalline silicon wafers - Method of determining the corrosion rate of mono and multi crystalline silicon wafers (as cut)

General Administration of Quality Supervision, Inspection and Quarantine of the People‘s Republic of China, silicon wafer

• GB/T 26066-2010 Practice for shallow etch pit detection on silicon
• GB/T 25188-2010 Thickness measurements for ultrathin silicon oxide layers on silicon wafers X-ray photoelectron spectroscopy
• GB/T 30866-2014 Test method for measuring diameter of monocrystalline silicon carbide wafers
• GB/T 32278-2015 Test method for flatness of silicon carbide single wafer
• GB/T 12964-2003 Monocrystalline silicon polished wafers
• GB/T 29055-2012 Multi-crystalline silicon wafer for solar cell
• GB/T 29506-2013 300 mm polished monocrystalline silicon wafers
• GB/T 30656-2014 Polished monocrystalline silicon carbide wafers
• GB/T 30656-2023 Silicon carbide single crystal polished wafer
• GB/T 30867-2014 Test method for measuring thickness and total thickness variation of monocrystalline silicon carbide wafers
• GB/T 30868-2014 Test method for measuring micropipe density of monocrystalline silicon carbide wafers.Chemically etching
• GB/T 29055-2019(英文版) Multi crystalline silicon wafers for photovoltaic solar cell
• GB/T 12965-1996 Monocrystalline silicon as cut slices and lapped slices
• GB/T 12965-2005 Monocrystalline silicon cut slices and lapped slice

Hebei Provincial Standard of the People's Republic of China, silicon wafer

• DB13/T 1314-2010 Solar grade monocrystalline silicon square rod, monocrystalline silicon wafer
• DB13/T 1633-2012 Solar Grade Polysilicon Wafer
• DB13/T 1828-2013 Solar grade monocrystalline silicon wafer

国家市场监督管理总局、中国国家标准化管理委员会, silicon wafer

• GB/T 37051-2018 Test method for determination of crystal defect density in PV silicon ingot and wafer
• GB/T 26071-2018 Monocrystalline silicon wafers for solar cells
• GB/T 12964-2018 Monocrystalline silicon polished wafers
• GB/T 26069-2022 Annealed monocrystalline silicon wafers
• GB/T 29055-2019 Multicrystalline silicon wafers for photovoltaic solar cell
• GB/T 12965-2018 Monocrystalline silicon as cut wafers and lapped wafers

British Standards Institution (BSI), silicon wafer

• BS EN 50513:2009 Solar wafers - Data sheet and product information for crystalline silicon wafers for solar cell manufacturing

American Society for Testing and Materials (ASTM), silicon wafer

• ASTM F1390-97 Standard Test Method for Measuring Warp on Silicon Wafers by Automated Noncontact Scanning
• ASTM F672-88(1995)e1 Standard Test Method for Measuring Resistivity Profiles Perpendicular to the Surface of a Silicon Wafer Using a Spreading Resistance Probe
• ASTM F1392-00 Standard Test Method for Determining Net Carrier Density Profiles in Silicon Wafers by Capacitance-Voltage Measurements With a Mercury Probe

Group Standards of the People's Republic of China, silicon wafer

• T/CASAS 013-2021 Measuring method for testing the density of dislocation in SiC crystal Combined KOH etching and image recognition methods
• T/CASAS 032-2023 Test method for the content of metal elements on the surface of silicon carbide wafer—Inductively coupled plasma mass spectrometry
• T/SZBX 118-2023 Monocrystalline silicon wafers for solar cells
• T/CEC 290-2019 Technical Requirements for Back Contact Single Crystal Wafer
• T/ZZB 2675-2022 Monocrystalline silicon as lapped wafers for TVS
• T/CPIA 0037-2022 Specifications for Photovoltaic Crystalline Wafers
• T/IAWBS 013-2019 The measurement method of resistivity for semi-insulating silicon carbide substrate

Danish Standards Foundation, silicon wafer

• DS/EN 50513:2009 Solar wafers - Data sheet and product information for crystalline silicon wafers for solar cell manufacturing

Lithuanian Standards Office , silicon wafer

• LST EN 50513-2009 Solar wafers - Data sheet and product information for crystalline silicon wafers for solar cell manufacturing

AENOR, silicon wafer

• UNE-EN 50513:2011 Solar wafers - Data sheet and product information for crystalline silicon wafers for solar cell manufacturing

KR-KS, silicon wafer

• KS D ISO 14706-2003(2023)

Military Standard of the People's Republic of China-General Armament Department, silicon wafer

• GJB 1944A-2017 Specification for silicon monocrystals for space solar cells
• GJB 2918-1997 Specification for detector grade high resistance zone fused silicon monoliths

Professional Standard - Non-ferrous Metal, silicon wafer

• YS/T 1167-2016 Monocrystalline silicon etched wafers

Professional Standard - Electron, silicon wafer

• SJ 20750-1999 Specification for radiation hardened monocrystal silicon wafers for millitary CMOS integrated circuits
• SJ 2572-1985 Silicon monocrystalline rods and sheets for solar cells

Japanese Industrial Standards Committee (JISC), silicon wafer

• JIS H 0612:1975 Testing methods of resistivity for single crystal silicon wafers with four point probe
• JIS K 0148:2005 Surface chemical analysis -- Determination of surface elemental contamination on silicon wafers by total-reflection X-ray fluorescence (TXRF) spectroscopy

International Organization for Standardization (ISO), silicon wafer

• ISO 14706:2000 Surface chemical analysis - Determination of surface elemental contamination on silicon wafers by total-reflection X-ray fluorescence (TXRF) spectroscopy
• ISO 14706:2014 Surface chemical analysis - Determination of surface elemental contamination on silicon wafers by total-reflection X-ray fluorescence (TXRF) spectroscopy

Professional Standard - Ferrous Metallurgy, silicon wafer

• YB 1603-1983 Silicon single crystal cutting and grinding discs

UNKNOWN, silicon wafer

• YB 1603-83

Shanghai Provincial Standard of the People's Republic of China, silicon wafer

• DB31/ 792-2014 Norm of energy consumption per unit products for monocrystalline silicon and silicon wafers
• DB31/T 792-2014 Energy consumption quota per unit product of silicon single crystal and its silicon wafer
• DB31/ 792-2020 Energy consumption quota per unit product of silicon single crystal and its silicon wafer

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