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single chip

single chip, Total:51 items.

In the international standard classification, single chip involves: Semiconducting materials, Non-ferrous metals, Optoelectronics. Laser equipment, Piezoelectric and dielectric devices, Vocabularies, Testing of metals, Installations in buildings, Solar energy engineering.


General Administration of Quality Supervision, Inspection and Quarantine of the People‘s Republic of China, single chip

国家市场监督管理总局、中国国家标准化管理委员会, single chip

Military Standard of the People's Republic of China-General Armament Department, single chip

  • GJB 3076A-2021 Gallium Phosphide Single Chip Specification
  • GJB 3076-1997 Gallium Phosphide Single Chip Specification
  • GJB 2917A-2018 Indium Phosphide Single Wafer Specification
  • GJB 2917A-2004 Indium Phosphide Single Wafer Specification
  • GJB 2917-1997 Indium Phosphide Single Wafer Specification
  • GJB 1944A-2017 Specification for silicon monocrystals for space solar cells
  • GJB 2452-1995 Specification for cadmium telluride single crystal wafers for infrared detectors
  • GJB 2918-1997 Specification for detector grade high resistance zone fused silicon monoliths
  • GJB 757-1989 Synthetic mica large single chip for radar microwave devices

Professional Standard - Electron, single chip

  • SJ 20640-1997 Specification for indium antimonide single crystal slices for use in infrared detector
  • SJ 20750-1999 Specification for radiation hardened monocrystal silicon wafers for millitary CMOS integrated circuits
  • SJ 2572-1985 Silicon monocrystalline rods and sheets for solar cells
  • SJ 3241-1989 Gallium arsenide single-crystal bar and wafer
  • SJ 3243-1989 Indium phosphide single-crystal bar and wafers

Japanese Industrial Standards Committee (JISC), single chip

  • JIS H 0612:1975 Testing methods of resistivity for single crystal silicon wafers with four point probe

Association Francaise de Normalisation, single chip

  • NF C93-616:2006 Single crystal wafers for surface acoustic wave (SAW) device applications - Specifications and measuring methods.

Hebei Provincial Standard of the People's Republic of China, single chip

Group Standards of the People's Republic of China, single chip

  • T/IAWBS 013-2019 The measurement method of resistivity for semi-insulating silicon carbide substrate
  • T/IAWBS 017-2022 Test method for full width at half maximum of double crystal X-rayrocking curve of diamond single crystal substrate
  • T/IAWBS 015-2021 Test method for full width at half maximum of double crystal X-ray rocking curve of Ga2O3 single crystal substrate
  • T/IAWBS 016-2022 X-ray double crystal rocking curve FWHM test method for silicon carbide single wafer
  • T/IAWBS 011-2019 Test methods for measuring resistivity of conductive silicon carbide wafers with a noncontact eddy-current gauge
  • T/ZZB 0497-2018 Single crystal wafers for surface acoustic wave device applications
  • T/SZBX 118-2023 Monocrystalline silicon wafers for solar cells
  • T/CEC 290-2019 Technical Requirements for Back Contact Single Crystal Wafer
  • T/ZZB 2675-2022 Monocrystalline silicon as lapped wafers for TVS

International Electrotechnical Commission (IEC), single chip

  • IEC PAS 62276:2001 Single crystal wafers applied for surface acoustic wave device - Specification and measuring method

中华人民共和国国家质量监督检验检疫总局、中国国家标准化管理委员会, single chip

  • GB/T 34481-2017 Test method for measuring etch pit density (EPD) in low dislocation density monocrystalline germanium slices

Professional Standard - Non-ferrous Metal, single chip

Shaanxi Provincial Standard of the People's Republic of China, single chip

  • DB61/T 512-2011 Inspection rules for monocrystalline silicon wafers for solar cells

Professional Standard - Ferrous Metallurgy, single chip

  • YB 1603-1983 Silicon single crystal cutting and grinding discs

UNKNOWN, single chip

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