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chip, Total:160 items.

In the international standard classification, chip involves: Integrated circuits. Microelectronics, Semiconducting materials, Electronic components in general, Insulating fluids, Non-ferrous metals, Machine tools, Piezoelectric and dielectric devices, Testing of metals, Installations in buildings, Solar energy engineering, Electromechanical components for electronic and telecommunications equipment, Radiation measurements, Electric filters, Optoelectronics. Laser equipment, Resistors, Semiconductor devices, Galvanic cells and batteries, Electricity. Magnetism. Electrical and magnetic measurements, Products of the chemical industry, Lamps and related equipment, Vocabularies, Flexible drives and transmissions, Analytical chemistry.

International Electrotechnical Commission (IEC), chip

IEC PAS 62084:1998 Implementation of Flip Chip and Chip Scale technology
IEC PAS 62276:2001 Single crystal wafers applied for surface acoustic wave device - Specification and measuring method

General Administration of Quality Supervision, Inspection and Quarantine of the People‘s Republic of China, chip

GB/T 15713-1995 Monocrystalline germanium slices
GB/T 13840-1992 wafer carrier
GB/T 5238-2009 Monocrystalline germanium and monocrystalline germanium slices
GB/T 16595-1996 Specification for a universal wafer grid
GB/T 16596-1996 Specification for establishing a wafer coordinate system
GB/T 30866-2014 Test method for measuring diameter of monocrystalline silicon carbide wafers
GB/T 32988-2016 Synthetic quartz crystal wafer for optical low pass filter (OLPF)
GB/T 32278-2015 Test method for flatness of silicon carbide single wafer
GB/T 13387-1992 Test method for measuring flat length on slices of electronic materials
GB/T 26066-2010 Practice for shallow etch pit detection on silicon
GB/T 5238-2009(英文版) Monocrystalline germanium and monocrystalline germanium slices
GB/T 30118-2013 Single crystal wafers for surface acoustic wave (SAW) device applications.Specifications and measuring methods
GB/T 30867-2014 Test method for measuring thickness and total thickness variation of monocrystalline silicon carbide wafers
GB/T 30868-2014 Test method for measuring micropipe density of monocrystalline silicon carbide wafers.Chemically etching
GB/T 13387-2009 Test method for measuring flat length wafers of silicon and other electronic materials
GB/T 29055-2012 Multi-crystalline silicon wafer for solar cell
GB/T 12964-2003 Monocrystalline silicon polished wafers
GB/T 41751-2022 Test method for radius of curvature of crystal plane in GaN single crystal substrate wafers
GB/T 29506-2013 300 mm polished monocrystalline silicon wafers
GB/T 29055-2019(英文版) Multi crystalline silicon wafers for photovoltaic solar cell
GB/T 25188-2010 Thickness measurements for ultrathin silicon oxide layers on silicon wafers X-ray photoelectron spectroscopy
GB/T 26070-2010 Characterization of subsurface damage in polished compound semiconductor wafers by reflectance difference spectroscopy method
GB/T 30656-2014 Polished monocrystalline silicon carbide wafers
GB/T 30656-2023 Silicon carbide single crystal polished wafer
GB/T 6616-2023 Non-contact eddy current method for testing semiconductor wafer resistivity and semiconductor film sheet resistance
GB/T 12965-1996 Monocrystalline silicon as cut slices and lapped slices
GB/T 12965-2005 Monocrystalline silicon cut slices and lapped slice

Professional Standard - Electron, chip

SJ 3118-1988 Wafer holder
SJ 20437-1994 Specification for lead tin telluride slice for use in infrared detector
SJ 20520-1995 Specification for Cadmium-Zine Telluride Slice for use Mercury-Cadmium Telluride film
SJ/T 11497-2015 Test method for thermal stability testing of gallium arsenide wafers
SJ 20640-1997 Specification for indium antimonide single crystal slices for use in infrared detector
SJ/T 11492-2015 Test methods for measurement of composition of gallium arsenide phosphide wafers by photoluminescence
SJ 20750-1999 Specification for radiation hardened monocrystal silicon wafers for millitary CMOS integrated circuits
SJ 20438-1994 Methods for measurement of lead tin telluride slice for use in infrared detector
SJ/T 31091-1994 Requirements of readiness and methods of inspection and assessment for wafer slicers
SJ/T 11199-1999 Piezoelectric quartz crystal blanks
SJ/T 31092-1994 Requirements of readiness and methods of inspection and assessment for NC wafer cutting (scribing) machines
SJ/T 11487-2015 Non-contact measurement method for the resistivity of semi-insulating semiconductor wafer
SJ/T 31065-1994 Requirements of readiness and methods of inspection and assessment for Type 24 NC wafer buffing machines
SJ 2572-1985 Silicon monocrystalline rods and sheets for solar cells
SJ 3241-1989 Gallium arsenide single-crystal bar and wafer
SJ 3243-1989 Indium phosphide single-crystal bar and wafers

国家市场监督管理总局、中国国家标准化管理委员会, chip

GB/T 5238-2019 Monocrystalline germanium and monocrystalline germanium slices
GB/T 16595-2019 Specification for a universal wafer grid
GB/T 16596-2019 Specification for establishing a wafer coordinate system
GB/T 26071-2018 Monocrystalline silicon wafers for solar cells
GB/T 29055-2019 Multicrystalline silicon wafers for photovoltaic solar cell
GB/T 12964-2018 Monocrystalline silicon polished wafers
GB/T 26069-2022 Annealed monocrystalline silicon wafers
GB/T 12965-2018 Monocrystalline silicon as cut wafers and lapped wafers
GB/T 37051-2018 Test method for determination of crystal defect density in PV silicon ingot and wafer

Group Standards of the People's Republic of China, chip

T/WLJC 57-2019 Precision grinding disc for wafers
T/CECA 48-2021 Quartz Crystal Microbalance Element
T/WLJC 59-2019 Quartz wafer inverted wave tube
T/ZZB 0497-2018 Single crystal wafers for surface acoustic wave device applications
T/WLJC 58-2019 Dressing wheel for wafers precision grinding disc
T/IAWBS 008-2019 Experimental method for residual stress in SiC wafers
T/ZSA 38-2020 Experimental method for residual stress in SiC wafers
T/CAB 0180-2022 Measurement method for characteristic parameters of GAGG crystal and crystal array
T/CASAS 003-2018 4H-SiC Epitaxial Wafers for p-IGBT Devices
T/IAWBS 017-2022 Test method for full width at half maximum of double crystal X-rayrocking curve of diamond single crystal substrate
T/IAWBS 015-2021 Test method for full width at half maximum of double crystal X-ray rocking curve of Ga2O3 single crystal substrate
T/IAWBS 016-2022 X-ray double crystal rocking curve FWHM test method for silicon carbide single wafer
T/IAWBS 013-2019 The measurement method of resistivity for semi-insulating silicon carbide substrate
T/IAWBS 011-2019 Test methods for measuring resistivity of conductive silicon carbide wafers with a noncontact eddy-current gauge
T/CEMIA 006-2018 Quartz crystal resonator for film thickness control
T/SZBX 118-2023 Monocrystalline silicon wafers for solar cells
T/CASME 823-2023 Soluble microcrystalline patches technical requirements
T/CASAS 013-2021 Measuring method for testing the density of dislocation in SiC crystal Combined KOH etching and image recognition methods
T/CEC 290-2019 Technical Requirements for Back Contact Single Crystal Wafer
T/CECA 83-2023 Lithium tantalate and lithium niobate reduced single crystal wafers— technical requirements and measurement methods for lightness and color difference
T/ZZB 2675-2022 Monocrystalline silicon as lapped wafers for TVS
T/CPIA 0037-2022 Specifications for Photovoltaic Crystalline Wafers
T/CASAS 032-2023 Test method for the content of metal elements on the surface of silicon carbide wafer—Inductively coupled plasma mass spectrometry

Korean Agency for Technology and Standards (KATS), chip

KS D 0261-2012(2017) Visual inspection for silicon wafers with specular surfaces
KS C 0256-2002(2017) Testing method of resistivity for silicon crystals and silicon wafers with four - point probe

Military Standard of the People's Republic of China-General Armament Department, chip

GJB 2917-1997 Indium Phosphide Single Wafer Specification
GJB 3076A-2021 Gallium Phosphide Single Chip Specification
GJB 3076-1997 Gallium Phosphide Single Chip Specification
GJB 2917A-2018 Indium Phosphide Single Wafer Specification
GJB 2917A-2004 Indium Phosphide Single Wafer Specification
GJB 1866-1994 Specification for mercury cadmium telluride wafers for infrared detectors
GJB 2918-1997 Specification for detector grade high resistance zone fused silicon monoliths
GJB 1944A-2017 Specification for silicon monocrystals for space solar cells
GJB 2452-1995 Specification for cadmium telluride single crystal wafers for infrared detectors
GJB 757-1989 Synthetic mica large single chip for radar microwave devices
GJB 1785-1993 Test method for mercury cadmium telluride wafers for infrared detectors
GJB 8773-2015 Specification for direct bond polishing cloths for mercury cadmium telluride detector wafers
GJB 8359-2015 Specification for medium-thick film S0I wafers for microelectromechanical systems and power devices

British Standards Institution (BSI), chip

BS EN 50513:2009 Solar wafers - Data sheet and product information for crystalline silicon wafers for solar cell manufacturing
23/30468947 DC BS EN 62276. Single crystal wafers for surface acoustic wave (SAW) device applications. Specifications and measuring methods

JP-JEITA, chip

JEITA EM3603B-2006 Standard of SOI wafers and metrology
JEITA EM-3510-2007 Edge Roll-Off Measurement Method for Silicon Wafers
JEITA ET7501-105-2006 Land pattern design guideline for surface mount devices :Sectional requirements （Chip carriers with J-Leads on four sides)

Aerospace Industries Association/ANSI Aerospace Standards, chip

AIA/NAS NAS 4117-1996 Heat Sink-Insulator, Wafer Type

Danish Standards Foundation, chip

DS/EN 50513:2009 Solar wafers - Data sheet and product information for crystalline silicon wafers for solar cell manufacturing
DS/EN 62276:2013 Single crystal wafers for surface acoustic wave (SAW) device applications - Specifications and measuring methods

Lithuanian Standards Office , chip

LST EN 50513-2009 Solar wafers - Data sheet and product information for crystalline silicon wafers for solar cell manufacturing
LST EN 62276-2006 Single crystal wafers for surface acoustic wave (SAW) device appplications. Specifications and measuring methods (IEC 62276:2005)
LST EN 62276-2013 Single crystal wafers for surface acoustic wave (SAW) device applications - Specifications and measuring methods (IEC 62276:2012)

AENOR, chip

UNE-EN 50513:2011 Solar wafers - Data sheet and product information for crystalline silicon wafers for solar cell manufacturing

SE-SIS, chip

SIS SEN 43 15-1962 Rotary wafer switches for electronic equipment

German Institute for Standardization, chip

DIN 41619:1983 Sectional specification for rotary wafer switches for telecommunication
DIN V VDE V 0126-18-3:2007 Solar wafers - Part 3: Alkaline corrosion damage of crystalline silicon wafers - Method of determining the corrosion rate of mono and multi crystalline silicon wafers (as cut)
DIN EN IEC 62276:2023-05 Single crystal wafers for surface acoustic wave (SAW) device applications - Specifications and measuring methods (IEC 49/1401/CD:2022); Text in German and English / Note: Date of issue 2023-04-28*Intended as replacement for DIN EN 62276 (2017-08).
DIN EN 62276:2017-08 Single crystal wafers for surface acoustic wave (SAW) device applications - Specifications and measuring methods (IEC 62276:2016); German version EN 62276:2016 / Note: DIN EN 62276 (2013-08) remains valid alongside this standard until 2019-11-28.

U.S. Military Regulations and Norms, chip

ARMY QPL-55681-QPD-2010 Capacitor, Chip, Multiple Layer, Fixed, Ceramic Dielectric

Professional Standard - Non-ferrous Metal, chip

YS/T 986-2014 Specification for serial alphanumeric marking of the front surface of wafers
YS/T 1167-2016 Monocrystalline silicon etched wafers

Defense Logistics Agency, chip

DLA QPL-32192-1-2006 RESISTORS, CHIP, THERMAL (THERMISTOR), GENERAL SPECIFICATION FOR
DLA DSCC-DWG-05009-2005 RESISTOR, FIXED, FILM, CHIP (MELF), 1/4 WATT, STYLE 0204
DLA MIL-PRF-32192 (1)-2005 RESISTORS, CHIP, THERMAL (THERMISTOR), GENERAL SPECIFICATION FOR
DLA DSCC-DWG-04032 REV A-2006 RESISTOR, CHIP, FIXED, FILM, LOW VALUES, HIGH POWER, 1.5 WATTS, STYLE 2512
DLA DSCC-DWG-04007 REV B-2006 RESISTOR, CHIP, FIXED, FILM, MOISTURE RESISTANT, MILITARY AND SPACE LEVEL, STYLE 0302
DLA DSCC-DWG-04008 REV B-2006 RESISTOR, CHIP, FIXED, FILM, MOISTURE RESISTANT, MILITARY AND SPACE LEVEL, STYLE 0402
DLA DSCC-DWG-04009 REV B-2006 RESISTOR, CHIP, FIXED, FILM, MOISTURE RESISTANT, MILITARY AND SPACE LEVEL, STYLE 0603
DLA DSCC-DWG-07016-2007 CAPACITOR, FIXED, TANTALUM CHIP, WEIBULL GRADED, LOW ESR
DLA DSCC-DWG-87075 REV E-2005 RESISTOR, FIXED, FILM, CHIP, FLANGE MOUNT, DOUBLE TAB, HIGH POWER 10 WATTS
DLA DSCC-DWG-04025-2005 RESISTOR, CHIP, FIXED, FILM, SURFACE MOUNT, 5 WATTS (UP TO 25 WATTS WITH HEATSINK)
DLA DSCC-DWG-06003 REV A-2006 RESISTOR, CHIP, FIXED, POWER METAL STRIP, SURFACE MOUNT, LOW VALUE (2 WATT), STYLE 4527
DLA DSCC-DWG-06006-2006 RESISTOR, CHIP, FIXED, POWER METAL STRIP, SURFACE MOUNT, LOW VALUE (3 WATT), STYLE 4527
DLA DSCC-DWG-06007-2006 RESISTOR, CHIP, FIXED, POWER METAL STRIP, SURFACE MOUNT, LOW VALUE (.1 WATT), STYLE 0603
DLA DSCC-DWG-06009-2006 RESISTOR, CHIP, FIXED, POWER METAL STRIP, SURFACE MOUNT, LOW VALUE (.25 WATT), STYLE 1206
DLA DSCC-DWG-06010 REV A-2007 RESISTOR, CHIP, FIXED, POWER METAL STRIP, SURFACE MOUNT, LOW VALUE (.5 WATT), STYLE 2010
DLA DSCC-DWG-06011-2006 RESISTOR, CHIP, FIXED, POWER METAL STRIP, SURFACE MOUNT, LOW VALUE (1.0 WATT), STYLE 2512
DLA DSCC-DWG-06012-2006 RESISTOR, CHIP, FIXED, POWER METAL STRIP, SURFACE MOUNT, LOW VALUE (2.0 WATT), STYLE 2816

American Society for Testing and Materials (ASTM), chip

ASTM F1212-89(2002) Standard Test Method for Thermal Stability Testing of Gallium Arsenide Wafers
ASTM F1212-89(1996)e1 Standard Test Method for Thermal Stability Testing of Gallium Arsenide Wafers
ASTM F1390-97 Standard Test Method for Measuring Warp on Silicon Wafers by Automated Noncontact Scanning

API - American Petroleum Institute, chip

API STD 594 CHINESE-2004 Check Valves: Flanged@ Lug@ Wafer and Butt-welding (Sixth Edition)
API STD 594 RUSSIAN-2004 Check Valves: Flanged@ Lug@ Wafer and Butt-welding (Sixth Edition)
API STD 594-2004 Check Valves: Flanged@ Lug@ Wafer and Butt-welding (Sixth Edition)

Electronic Components, Assemblies and Materials Association, chip

ECA EIA-800-1999 Integrated Passive Device (IPD) Chipscale Package Design Guidelines

Japanese Industrial Standards Committee (JISC), chip

JIS H 0612:1975 Testing methods of resistivity for single crystal silicon wafers with four point probe
JIS C 6760:2014 Single crystal wafers for surface acoustic wave (SAW) device applications .Specifications and measuring methods

中国有色金属工业总公司, chip

YS/T 27-1992 Methods for measuring and counting particulate contamination on wafer surfaces

工业和信息化部, chip

SJ/T 11199-2016 Piezoelectric quartz crystal sheet

Association Francaise de Normalisation, chip

NF C93-616:2013 Single Crystal wafers for surface acoustic wave (SAW) device applications - Specifications and measuring methods
NF C93-616:2006 Single crystal wafers for surface acoustic wave (SAW) device applications - Specifications and measuring methods.
NF C93-616*NF EN 62276:2018 Single crystal wafers for surface acoustic wave (SAW) device applications - Specifications and measuring methods

Military Standard of the People's Republic of China-Commission of Science,Technology and Industry for National Defence, chip

GJB 6259-2008 Specification for self-adhesive polishing pad used for polishing of Te-Cd-Hg crysal wafer

Hebei Provincial Standard of the People's Republic of China, chip

DB13/T 1633-2012 Solar Grade Polysilicon Wafer
DB13/T 1828-2013 Solar grade monocrystalline silicon wafer
DB13/T 1314-2010 Solar grade monocrystalline silicon square rod, monocrystalline silicon wafer

IEC - International Electrotechnical Commission, chip

PAS 62276-2001 Single Crystal Wafers Applied for Surface Acoustic Wave Device - Specification and Measuring Method (Edition 1.0)

中华人民共和国国家质量监督检验检疫总局、中国国家标准化管理委员会, chip

GB/T 34481-2017 Test method for measuring etch pit density (EPD) in low dislocation density monocrystalline germanium slices

CENELEC - European Committee for Electrotechnical Standardization, chip

EN 62276:2013 Single crystal wafers for surface acoustic wave (SAW) device applications - Specifications and measuring methods

European Committee for Electrotechnical Standardization（CENELEC）, chip

EN 62276:2016 Single crystal wafers for surface acoustic wave (SAW) device applications - Specifications and measuring methods

ES-UNE, chip

UNE-EN 62276:2016 Single crystal wafers for surface acoustic wave (SAW) device applications - Specifications and measuring methods (Endorsed by Asociación Española de Normalización in January of 2017.)

Professional Standard - Aviation, chip

HB 6742-1993 Determination of Crystal Orientation of Single Crystal Blades by X-ray Backblow Laue Photography

Electronic Industrial Alliance (U.S.), chip

EIA-763-2002 Bare Die and Chip Scale Packages Taped in 8 mm& 12 mm Carrier Tape for Automatic Handling

Shaanxi Provincial Standard of the People's Republic of China, chip

DB61/T 512-2011 Inspection rules for monocrystalline silicon wafers for solar cells

Professional Standard - Building Materials, chip

JC/T 471-1992 Artificial Quartz Crystal Plates for Photosensitive Detectors

国家建筑材料工业局, chip

JC 471-1992 Artificial quartz crystal sheet for photosensitive detectors

KR-KS, chip

KS D ISO 14706-2003(2023)

Professional Standard - Ferrous Metallurgy, chip

YB 1603-1983 Silicon single crystal cutting and grinding discs

UNKNOWN, chip

YB 1603-83